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Dominique Planson

350
Documents

Présentation

M. Dominique Planson Téléphone : 04 72 43 87 24 Ingénieur INSA-GE, option Micro-électronique (91), DEA-DEI (91), Docteur INSA (1994)

Publications

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First results on 1.2 kV SiC MOSFET body diode robustness tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles
Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩
Article dans une revue hal-04282544v1
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Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Maroun Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Eric Frayssinet
physica status solidi (a), 2023, ⟨10.1002/pssa.202200841⟩
Article dans une revue hal-04111725v1
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Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , Philippe de Mierry
Crystals, 2023, 13 (5), pp.713. ⟨10.3390/cryst13050713⟩
Article dans une revue hal-04099071v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung
Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩
Article dans une revue hal-04276812v1
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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson
Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩
Article dans une revue hal-04199489v1
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Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Tamiris Grossl Bade , Hassan Hamad , Adrien Lambert , Hervé Morel , Dominique Planson
Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩
Article dans une revue hal-04121028v1
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Edge terminations for 4H-SiC power devices: a critical issue

Philippe Godignon , Josep Montserrat , José Rebollo , Dominique Planson
Materials Science Forum, 2022, 1062, pp.570-575. ⟨10.4028/p-lom714⟩
Article dans une revue hal-03694757v1
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Capacitance temperature dependence analysis of GaN-on-Si power transistors

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Matthew Charles , Marie-Anne Jaud
Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩
Article dans une revue cea-03874112v1
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Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Hervé Morel , Luong Viet Phung
Micro and Nanostructures, 2022, 172, pp.207433. ⟨10.1016/j.micrna.2022.207433⟩
Article dans une revue hal-04032160v1
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Investigation of SiC thyristors with varying amplifying gate design

Sigo Scharnholz , Ralf Hassdorf , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung
Materials Science Forum, 2022, 1062, pp.493-497. ⟨10.4028/p-ztr5d7⟩
Article dans une revue hal-03702384v1
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4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Luong Viêt V Phung , Besar Asllani
Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩
Article dans une revue hal-03689424v1
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Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson
Materials Science Forum, 2022, 1062, pp.293-297. ⟨10.4028/p-5p0qg2⟩
Article dans une revue hal-03702821v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Article dans une revue hal-03826217v1
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Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Besar Asllani , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Luong Viet Phung
Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩
Article dans une revue hal-02931290v1
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Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani
Materials Science Forum, 2020, 1004, pp.290. ⟨10.4028/www.scientific.net/MSF.1004.290⟩
Article dans une revue hal-02925178v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , Abderrahime Zaoui , Gregory Grosset , Dominique Planson
Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩
Article dans une revue hal-02060228v1
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10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization

Besar Asllani , Hervé Morel , Luong Viêt Phung , Dominique Planson
Energies, 2019, ⟨10.3390/en12234566⟩
Article dans une revue hal-02398585v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , Jean-Baptiste Fonder , Beverley Choucoutou
Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩
Article dans une revue hal-02060334v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , Alberto Castellazzi , Dominique Planson , Hervé Morel
Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩
Article dans une revue hal-02060341v1
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Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

Dominique Planson , Besar Asllani , Luong-Viet Phung , Pascal Bevilacqua , Hassan Hamad
Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩
Article dans une revue hal-02053053v1
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson
Materials Science Forum, 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩
Article dans une revue hal-02436812v1
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Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Teng Zhang , Christophe Raynaud , Dominique Planson
European Physical Journal: Applied Physics, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩
Article dans une revue hal-02047099v1
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Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

Jean-François Mogniotte , Dominique Tournier , Christophe Raynaud , Mihai Lazar , Dominique Planson
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩
Article dans une revue hal-01864533v1
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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Besar Asllani , Asad Fayyaz , Alberto Castellazzi , Hervé Morel , Dominique Planson
Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩
Article dans une revue hal-01889461v1
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Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Besar Asllani , Jean Baptiste Fonder , Pascal Bevilacqua , Dominique Planson , Luong Viet Phung
Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩
Article dans une revue hal-01857352v1
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Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , R Arvinte
Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩
Article dans une revue hal-01818806v1
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski
Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
Article dans une revue hal-01648360v1

Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions

Gabriel Ferro , Selsabil Sejil , Mihai Lazar , D. Carole , C. Brylinski
physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩
Article dans une revue hal-01615190v1
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OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K

Hassan Hamad , Dominique Planson , Christophe Raynaud , Pascal Bevilacqua
Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩
Article dans une revue hal-01865068v1
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Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

Junichi Hasegawa , Loris Pace , Luong Viet Phung , Mutsuko Hatano , Dominique Planson
IEEE Transactions on Electron Devices, 2017, 64 (3), pp.1203-1208. ⟨10.1109/TED.2017.2657223⟩
Article dans une revue hal-01636430v1
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SiC integrated circuits for smart power converter

J F Mogniotte , Mihai Lazar , Christophe Raynaud , Dominique Planson , B Allard
Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399
Article dans une revue hal-04277111v1
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Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

Julien Pezard , Véronique Soulière , Mihai Lazar , Naoufel Haddour , François Buret
Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩
Article dans une revue hal-01644735v1
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud
Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩
Article dans une revue hal-01388027v1
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Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung
Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩
Article dans une revue hal-01391838v1
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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud
IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩
Article dans une revue hal-01387992v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski
Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩
Article dans une revue hal-01388031v1
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Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Amira Souguir-Aouani , Nicolas Thierry-Jebali , Dominique Tournier , Arnaud Yvon , Emmanuel Collard
Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩
Article dans une revue hal-01857348v1
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Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Bertrand Vergne
Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩
Article dans une revue hal-01388035v1
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The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

Mihai Lazar , Farah Laariedh , Pierre Cremillieu , Dominique Planson , Jean-Louis Leclercq
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩
Article dans une revue hal-01391844v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole
Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342
Article dans une revue hal-01626119v1
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A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Berangère Toury
Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩
Article dans une revue hal-01391858v1
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4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantin Vamvoukakis
Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩
Article dans une revue hal-01391852v1
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2D Electric field imagery in 4H-SiC power diodes using OBIC technique

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier
European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩
Article dans une revue hal-01387989v1
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson
Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩
Article dans une revue hal-01387987v1
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Short-Circuit Capability Exploration of Silicon Carbide Devices

Maxime Berthou , Dominique Planson , Dominique Tournier
Materials Science Forum, 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩
Article dans une revue hal-02133674v1
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Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson
Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩
Article dans une revue hal-02116809v1
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Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode

Houssam Arbess , Karine Isoird , Saleem Hamady , Moustafa Zerarka , Dominique Planson
IEEE Transactions on Electron Devices, 2015, 62 (9), pp. 2945-2951. ⟨10.1109/TED.2015.2456073⟩
Article dans une revue hal-01218835v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
Article dans une revue hal-01387983v1

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , B. Toury
Applied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩
Article dans une revue hal-01391845v1
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High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Houssam Arbess , Karine Isoird , Moustafa Zerarka , Henri Schneider , Marie-Laure Locatelli
Diamond and Related Materials, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩
Article dans une revue hal-01218796v1
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Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

Pierre Brosselard , Florian Chevalier , Benjamin Proux , Nicolas Thierry-Jebali , Pascal Bevilacqua
Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩
Article dans une revue hal-02133670v1
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Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Tournier , Bertrand Vergne
Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩
Article dans une revue hal-01387924v1

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

Thibaut Chailloux , Cyril Calvez , Nicolas Thierry Thierry-Jebali , Dominique Planson , Dominique Tournier
Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩
Article dans une revue hal-01628242v1
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

Nicolas Thierry-Jebali , Mihai Lazar , A. Vo-Ha , D. Carole , V. Soulière
Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩
Article dans une revue hal-01987147v1

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes

Duy Minh Nguyen , Runhua Huang , Luong Viet Phung , Dominique Planson , Maxime Berthou
Materials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩
Article dans une revue hal-01627801v1

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière
Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩
Article dans une revue hal-01627792v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet
Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩
Article dans une revue hal-01627777v1
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Die attach using silver sintering. Practical implementation and analysis

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi
European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩
Article dans une revue hal-00874465v1

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson
Materials Science Forum, 2013, 740-742, pp.986 - 989. ⟨10.4028/www.scientific.net/MSF.740-742.986⟩
Article dans une revue hal-01627784v1

Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport

A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet
Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩
Article dans une revue hal-01627830v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali
Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩
Article dans une revue hal-00803058v1

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Florian Chevalier , Pierre Brosselard , Dominique Tournier , G. Grosset , L. Dupuy
Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩
Article dans une revue hal-00803057v1

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

N. Thierry-Jebali , A. Vo-Ha , D. Carole , Mihai Lazar , Gabriel Ferro
Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩
Article dans une revue hal-01627796v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viet Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , C. Brylinski
ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩
Article dans une revue hal-01636483v1
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Towards Very High Voltage SiC Power Devices

Dominique Planson , Pierre Brosselard , Dominique Tournier , Luong Viet Phung , Christian Brykinski
ECS Transactions, 2013, 50 (3), pp.425-436. ⟨10.1149/05003.0425ecst⟩
Article dans une revue hal-04240149v1

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson
Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩
Article dans une revue hal-04050541v1
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600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson
Materials Science Forum, 2012
Article dans une revue hal-02126341v1

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais
Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩
Article dans une revue hal-04050522v1
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Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson
Materials Science Forum, 2012, 740 - 742, pp.851-854. ⟨10.4028/www.scientific.net/MSF.740-742.851⟩
Article dans une revue hal-00799893v1
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SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

Mihai Lazar , François Jomard , Duy Minh M Nguyen , Christophe Raynaud , Gontran Pâques
Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩
Article dans une revue hal-02166414v1

Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE

Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz
Solid-State Electronics, 2012, 73, pp.32-36. ⟨10.1016/j.sse.2012.02.007⟩
Article dans une revue hal-00747348v1

4H-silicon carbide thin junction based ultraviolet photodetectors

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Vincent Le Borgne
Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩
Article dans une revue hal-00747356v1
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Pulse Characterization of Optically Triggered SiC Thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
Materials Science Forum, 2012, 717-720, pp.1179-1182. ⟨10.4028/www.scientific.net/MSF.717-720.1179⟩
Article dans une revue hal-02166420v1
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4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine
Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩
Article dans une revue hal-02275699v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz
Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩
Article dans une revue hal-00803059v1

Parallel and serial association of SiC light triggered thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
Materials Science Forum, 2012, 711, pp.129-133. ⟨10.4028/www.scientific.net/MSF.711.129⟩
Article dans une revue hal-00661512v1
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Comparison of SiC Thyristors with Differently Etched JTEs

Gontran Pâques , Sigo Scharnholz , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker
Materials Science Forum, 2012, 717-720, pp.1167 - 1170. ⟨10.4028/www.scientific.net/MSF.717-720.1167⟩
Article dans une revue hal-01627763v1
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Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier
Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩
Article dans une revue hal-02168909v1

Experimental determination of impact ionization coefficients in 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Nicolas Dheilly , Mihai Lazar , Dominique Tournier
Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩
Article dans une revue hal-00661429v1

Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Gontran Pâques , Sigo Scharnholz , Jens-Peter Konrath , Nicolas Dheilly , Dominique Planson
Materials Science Forum, 2011, 679-680, pp.473-476. ⟨10.4028/www.scientific.net/MSF.679-680.473⟩
Article dans une revue hal-00661475v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard
Materials Science Forum, 2011, 679-680, pp.477-480. ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Article dans une revue hal-04343373v1

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Maxime Berthou , Philippe Godignon , Josep Montserrat , José Millán , Dominique Planson
Journal of Electronic Materials, 2011, 40 (12), pp.2355 - 2362. ⟨10.1007/s11664-011-1774-y⟩
Article dans une revue hal-01627572v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩
Article dans une revue hal-00799902v1

Perspectives on SiC and III-N Based Devices for Power Electronics

Christian Brylinski , Dominique Planson
ECS Transactions, 2011, 41 (8), pp.139-152. ⟨10.1149/1.3631492⟩
Article dans une revue hal-04240508v1
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Diode Schottky sur diamant CVD. Simulation, réalisation technologique et étude de protection périphérique

Sojan Koné , Hui Ding , Fabien Thion , Henri Schneider , Karine Isoird
European Journal of Electrical Engineering, 2011, 14 (5), pp.553 - 567. ⟨10.3166/ejee.14.553-567⟩
Article dans une revue hal-01627761v1

Optical triggering of SiC thyristors using UV LEDs

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Pascal Bevilacqua , Christophe Raynaud
Electronics Letters, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩
Article dans une revue hal-00661435v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua
Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩
Article dans une revue hal-00597432v1
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Simulation and design of junction termination structures for diamond Schottky diodes

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , Hui Ding
Diamond and Related Materials, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩
Article dans une revue hal-00661491v1

Characterization and VHDL-AMS modeling of SiC-JFET transistor

Rami Mousa , Dominique Planson , Hervé Morel
European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩
Article dans une revue hal-00747438v1

Optical triggering of 4H-SiC thyristors with a 365 nm UV LED

Nicolas Dheilly , Gontran Pâques , Dominique Planson , Pascal Bevilacqua , Sigo Scharnholz
Materials Science Forum, 2011, 679-680, pp.690-693. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩
Article dans une revue hal-00661458v1

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

Gontran Pâques , Sigo Scharnholz , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker
IEEE Electron Device Letters, 2011, 32 (10), pp.1421 - 1423. ⟨10.1109/LED.2011.2163055⟩
Article dans une revue hal-00661495v1

Graded Etched Junction Termination for SiC Thyristors

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz
Materials Science Forum, 2011, 679-680, pp.457-460. ⟨10.4028/www.scientific.net/MSF.679-680.457⟩
Article dans une revue hal-00661479v1
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A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson
Materials Science Forum, 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩
Article dans une revue hal-02168907v1

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji
physica status solidi (a), 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩
Article dans une revue hal-00739492v1
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Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson
Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩
Article dans une revue hal-02186368v1
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Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre-Nicolas Volpe , Pierre Muret , Julien Pernot , Franck Omnès , Tokuyuki Teraji
Applied Physics Letters, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩
Article dans une revue hal-00734714v1

Optical beam induced current measurements: principles and applications to SiC device characterization

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard
physica status solidi (a), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩
Article dans une revue hal-00398971v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Article dans une revue hal-04368124v1
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Process Optimization for High Temperature SiC Lateral Devices

Maher Soueidan , Mihai Lazar , Duy Minh Nguyen , Dominique Tournier , Christophe Raynaud
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩
Article dans une revue hal-04368215v1

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Christophe Raynaud , Duy Minh Nguyen , Pierre Brosselard , Amador Pérez-Tomás , Dominique Planson
Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩
Article dans une revue hal-00391462v1

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Pierre Lefranc , Dominique Planson , Hervé Morel , Dominique Bergogne
Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩
Article dans une revue hal-00476201v1
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Jawad Ul Hassan , Pascal Bevilacqua
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Article dans une revue hal-04368136v1
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Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

Sombel Diaham , Marie Laure Locatelli , Thierry Lebey , Christophe Raynaud , Mihai Lazar
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.695-698. ⟨10.4028/www.scientific.net/MSF.615-617.695⟩
Article dans une revue hal-04368204v1
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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode

Heu Vang , Sigo Scharnholz , Christophe Raynaud , Mihai Lazar , Gontran Pâques
Materials Science Forum, 2008, MATERIALS SCIENCE FORUM, 600-603, pp.1011-1014. ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩
Article dans une revue hal-04368150v1

Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Heu Vang , Dominique Planson
Materials Science Forum, 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩
Article dans une revue hal-00391560v1

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne
Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Article dans une revue hal-04452237v1
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1.2 kV pin diodes with SiCrystal epiwafer

Heu Vang , Christophe Raynaud , Pierre Brosselard , Mihai Lazar , Pierre Cremillieu
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩
Article dans une revue hal-04369138v1
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OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Christophe Raynaud , Daniel Loup , Phillippe Godignon , Raul Perez Rodriguez , Dominique Tournier
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.1007-1010. ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩
Article dans une revue hal-04369314v1
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Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremillieu
Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩
Article dans une revue hal-04369331v1
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Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩
Article dans une revue hal-00179458v1
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Current sensing for SiC Power Devices

D. Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson
Materials Science Forum, 2006, MATERIALS SCIENCE FORUM, 527-529, pp.1215-1218. ⟨10.4028/www.scientific.net/MSF.527-529.1215⟩
Article dans une revue hal-04369348v1
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Ni-Al ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631
Article dans une revue hal-00141426v1
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Composants de puissance en SiC. Etat de l'art

Dominique Planson , Christophe Raynaud , Pierre Brosselard , Dominique Bergogne , Mihai Lazar
European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611
Article dans une revue hal-04371563v1
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A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques
Materials Science Forum, 2005, 483-485, pp.1005-1008. ⟨10.4028/www.scientific.net/MSF.483-485.1005⟩
Article dans une revue hal-04345858v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , Christophe Jacquier , Christiane Dubois , Christophe Raynaud , Gabriel Ferro
Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩
Article dans une revue hal-04362494v1
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Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩
Article dans une revue hal-01702019v1
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On-Chip Temperature Monitoring of a SiC Current Limiter

Dominique Tournier , Phillippe Godignon , José Millan , Dominique Planson , Jean-Pierre Chante
Materials Science Forum, 2004, 457-460, pp.1021-1024. ⟨10.4028/www.scientific.net/MSF.457-460.1021⟩
Article dans une revue hal-02966528v1
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Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , Jean-Pierre Chante
Materials Science Forum, 2004, 457-460, pp.1129-1132. ⟨10.4028/www.scientific.net/MSF.457-460.1129⟩
Article dans une revue hal-04092535v1

OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension

Christophe Raynaud , S. Wang , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
Diamond and Related Materials, 2004, 13 (9), pp.1697-1703
Article dans une revue hal-00140107v1
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Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

Gheorghe Brezeanu , Phillippe Godignon , E. Dimitrova , Christophe Raynaud , Dominique Planson
Materials Science Forum, 2004, 457-460, pp.1495-1498. ⟨10.4028/www.scientific.net/MSF.457-460.1495⟩
Article dans une revue hal-04093364v1
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The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

Mihai Lazar , G.C. Cardinali , Christophe Raynaud , Antonella Poggi , Dominique Planson
Materials Science Forum, 2004, 457-460, pp.1025-1028. ⟨10.4028/www.scientific.net/MSF.457-460.1025⟩
Article dans une revue hal-04345830v1

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

Mihai Lazar , Christophe Raynaud , Dominique Planson , Jean-Pierre Chante , Marie-Laure Locatelli
Journal of Applied Physics, 2003, 94 (5), pp.2992-2998
Article dans une revue hal-00140110v1
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Fabrication and Characterisation of High Voltage SiC-Thyristors

Volker Zorngiebel , Sigo Scharnholz , Emil Spahn , Pierre Brosselard , N. Arssi
Materials Science Forum, 2003, 433-436, pp.883-886. ⟨10.4028/www.scientific.net/MSF.433-436.883⟩
Article dans une revue hal-02489305v1
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A 4H-SiC high-power-density VJFET as controlled current limiter

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud
IEEE Transactions on Industry Applications, 2003, 39 (5), pp.1508-1513
Article dans une revue hal-00140109v1

Optimal layout for 6H-SiC VJFET controlled current limiting device

Dominique Tournier , Xavier Jordà , Philippe Godignon , Dominique Planson , Jean-Pierre Chante
Diamond and Related Materials, 2003, 12 (3-7), pp.1220-1223
Article dans une revue hal-00140113v1
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Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud
Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩
Article dans une revue hal-02458100v1
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OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩
Article dans une revue hal-04091213v1
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SiC Power Devices on QUASIC and SiCOI Smart-Cut® Substrates: First Demonstrations

Fabrice Letertre , N. Daval , Francois Templier , Edwige Bano , Dominique Planson
Materials Science Forum, 2003, 433-436, pp.813-818. ⟨10.4028/www.scientific.net/MSF.433-436.813⟩
Article dans une revue hal-04091219v1

Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

Laurent Ottaviani , Mihai Lazar , Marie-Laure Locatelli , Dominique Planson , Jean-Pierre Chante
Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩
Article dans une revue hal-00140116v1
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante
Materials Science Forum, 2002, 389-393, pp.1403-1406. ⟨10.4028/www.scientific.net/MSF.389-393.1403⟩
Article dans une revue hal-02151712v1
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Realization of a High-Current and Low RON 600V Current-Limiting Device

F. Nallet , Phillippe Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante
Materials Science Forum, 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩
Article dans une revue hal-02151717v1
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Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante
Materials Science Forum, 2002, 389-393, pp.1243-1246. ⟨10.4028/www.scientific.net/MSF.389-393.1243⟩
Article dans une revue hal-02151713v1
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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

K. Isoird , Mihai Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson
Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩
Article dans une revue hal-02151720v1
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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Mihai Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird
Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩
Article dans une revue hal-02151714v1
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Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud
Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩
Article dans une revue hal-00140118v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson
Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩
Article dans une revue hal-02151710v1

Experimental characterization of a 4H-SiC high voltage current limiting device

F. Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar
Applied Surface Science, 2001, 184 (1-4), pp.404-407
Article dans une revue hal-00140117v1
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Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Christophe Raynaud
Materials Science Forum, 2000, 338-342, pp.1363-1366. ⟨10.4028/www.scientific.net/MSF.338-342.1363⟩
Article dans une revue hal-02281030v1

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

N. S. Savkina , A. A. Lebedev , D. V. Davydov , A. M. Strel'Chuk , A. S. Tregubova
Materials Science and Engineering: B, 2000, 77 (1), pp.50-54
Article dans une revue hal-00140585v1
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Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Bruno Canut
Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩
Article dans une revue hal-02275720v1

P-N Junction creation in 6H-SiC by aluminum implantation

Laurent Ottaviani , Marie-Laure Locatelli , Dominique Planson , Karine Isoird , Jean-Pierre Chante
Materials Science and Engineering: B, 1999, 61 (2), pp.424-428
Article dans une revue hal-00141527v1

Aluminum multiple implantations in 6H–SiC at 300 K

Laurent Ottaviani , Erwan Morvan , Marie-Laure Locatelli , Dominique Planson , Philippe Godignon
Solid-State Electronics, 1999, 43 (12), pp.2215-2223. ⟨10.1016/S0038-1101(99)00199-9⟩
Article dans une revue hal-03727987v1

Design of a 600 V silicon carbide vertical power MOSFET

Dominique Planson , Marie-Laure Locatelli , F. Lanois , Jean-Pierre Chante
Materials Science and Engineering: B, 1999, 61 (2), pp.497-501
Article dans une revue hal-00141536v1

Electrical characterisation of MNOS devices on p-type 6H-SiC

S. Berberich , Philippe Godignon , José del R. Millán , Dominique Planson , H. Hartnagel
Diamond and Related Materials, 1999, 8 (2-5), pp.305-308
Article dans une revue hal-00141547v1
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Post-Implantation Annealing of Aluminium in 6H-SiC

Laurent Ottaviani , Dominique Planson , Marie-Laure Locatelli , Jean-Pierre Chante , B. Canut
Materials Science Forum, 1998, 264-268, pp.709-712. ⟨10.4028/www.scientific.net/MSF.264-268.709⟩
Article dans une revue hal-02281029v1

Metal-Nitride-Semiconductor Capacitors on 6H-SiC

Stefan Berberich , Phillippe Godignon , José Millan , Dominique Planson , H.L. Hartnagel
Materials Science Forum, 1998, 264-268, pp.881-884. ⟨10.4028/www.scientific.net/MSF.264-268.881⟩
Article dans une revue hal-03728071v1
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Les composants de puissance : état de l'art, les évolutions

Jean-Pierre Chante , Bruno Allard , Dominique Bergogne , Francis Calmon , René Elhinger
Revue Internationale de Génie Electrique, RIGE, 1998
Article dans une revue hal-02117240v1

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures

A. A. Lebedev , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli , Dominique Planson
Semiconductors, 1997, 31 (7), pp.735-737
Article dans une revue hal-00141601v1

Periphery protection for silicon carbide devices: State of the art and simulation

Dominique Planson , Marie-Laure Locatelli , S. Ortolland , Jean-Pierre Chante , H. Mitlehner
Materials Science and Engineering: B, 1997, 46 (1-3), pp.210-217
Article dans une revue hal-00141603v1

Damage annealing and dopant activation in Al ion implanted alpha-SiC

B. Canut , S. Ramos , J. Roger , Jean-Pierre Chante , Marie-Laure Locatelli
Materials Science and Engineering: B, 1997, 46 (1-3), pp.267-270. ⟨10.1016/S0921-5107(96)01986-1⟩
Article dans une revue hal-00141605v1
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The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC

A A Lebedev , A M Strel'Chuk , S. Ortolland , C Raynaud , Marie-Laure Locatelli
Institute of Physics Conference Series, 1996
Article dans une revue hal-02423361v1

Angle etch control for silicon carbide power devices

F. Lanois , P. Lassagne , Dominique Planson , Marie-Laure Locatelli
Applied Physics Letters, 1996, 69 (2), pp.236-238
Article dans une revue hal-00141623v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès hal-04147862v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès hal-04203163v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , Régis Meuret
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France
Communication dans un congrès hal-04240602v1
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V

Adrien Lambert , Hervé Morel , D. Tournier , Dominique Planson , Luong Viêt Phung
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04150168v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau
20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Communication dans un congrès hal-04221605v1
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Caractérisation dynamique de thyristors SiC avec gâchette amplificatrice

Sigo Scharnholz , Kamil Kotra , Ralf Hassdorf , Luong Viêt Phung , Dominique Planson
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04401362v1
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Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Dominique Tournier
International Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩
Communication dans un congrès hal-04238355v1

Vertical pin diodes on large freestanding (100) diamond film

M.A. Pinault-Thaury , Mohamed Bouras , Rémi Gillet , Ingrid Stenger , François Jomard
2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France
Communication dans un congrès hal-04219862v1
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Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville , Pierre Brosselard
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04218429v1
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Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics

Hervé Morel , Maroun Alam , Pascal Bevilacqua , D. Tournier , Dominique Planson
Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France
Communication dans un congrès hal-04224402v1
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Application of the Double Source Switching Test to GaN HEMTs

Tamiris Grossl Bade , Maroun Alam , Hervé Morel , Dominique Planson
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩
Communication dans un congrès hal-04225311v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04222211v1
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Micro-Raman characterization of vertical GaN Schottky and PN diodes

Camille Sonneville , Vishwajeet Maurya , Maroun Dagher , Adam Mohamed Kaywah , Eric Frayssinet
46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy
Communication dans un congrès hal-04170420v1

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Communication dans un congrès hal-03990840v1
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Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky

Camille Sonneville , Atse Julien Eric N’dohi , S Saidi , T H Ngo , P. de Mierry
Conférence Internationale Matériaux, Oct 2022, Lille, France
Communication dans un congrès hal-03844887v1
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Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices

Zahraa Zaidan , Nedal Al Taradeh , Christophe Rodriguez , Abdelatif Jaouad , Ali Soltani
Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco
Communication dans un congrès hal-03946187v1
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Design of a test package for high voltage SiC diodes

Arthur Boutry , Bruno Lefebvre , Cyril Buttay , Eric Vagnon , Dominique Planson
Proceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩
Communication dans un congrès hal-03772006v1

Trapping effects in High-Power 4H-Silicon Carbide (4H-SiC) Bipolar PiN Rectifiers

P Vigneshwara Raja , Besar Asllani , Christophe Raynaud , Hervé Morel , Luong Viet Phung
6th IEEE International Conference on Emerging Electronics (ICEE 2022), IEEE, Dec 2022, Bangalore, India
Communication dans un congrès hal-04011039v1

Dynamic characterization of SiC thyristors with amplifying gate design

K Kotra , S Scharnholz , R Hassdorf , L V Phung , Dominique Planson
E-MRS 2022 Fall Meeting, Sep 2022, Varsovie, Poland
Communication dans un congrès hal-04011099v1
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Multiphysics Characterizations of Vertical GaN Schottky Diodes

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès hal-03844585v1
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Maroun Alam , Hervé Morel , Luong Viêt Phung , Dominique Planson , A. Yvon
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩
Communication dans un congrès hal-03887865v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
Communication dans un congrès hal-03856578v1
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Stéphane Becu , Matthew Charles
SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan
Communication dans un congrès cea-03875079v1
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Electrical behavior of vertical Schottky diodes on GaN homoepitaxy

M Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Yvon Cordier
IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany
Communication dans un congrès hal-03854620v1
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Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices

Zahraa Zaidan , Nedal Al Taradeh , Christophe Rodriguez , Abdelatif Jaouad , Ali Soltani
Conférence Euro-méditerranéenne Organisé par Matériaux, Composants et Systèmes (EMCMDS), Nov 2022, Fez, Morocco
Communication dans un congrès hal-04303675v1
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Conception de diodes TMBS haute tension (6kV) en diamant

Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France
Communication dans un congrès hal-03355128v1

High voltage (6kV) diamond TMBS diode design

Ralph Makhoul , Karine Isoird , Luong Viet Phung , Dominique Planson
31st International Conference On Diamond and Carbon Materials, Sep 2021, Palma, Mallorca, Spain
Communication dans un congrès hal-03715580v1
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4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method

Dominique Planson , C Sonneville , Pascal Bevilacqua , L V Phung , B Asllani
ECSCRM 2020-2021, Oct 2021, Tours, France
Communication dans un congrès hal-03410274v1
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Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis

Alina Muravitskaya , Anna Rumyantseva , Atse Julien Eric N’dohi , Camille Sonneville , Dominique Planson
ECSCRM2020-2021, Oct 2021, Tours, France
Communication dans un congrès hal-03410757v1
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications

Joao Oliveira , Ali Alhoussen , Florent Loiselay , Hervé Morel , Dominique Planson
EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩
Communication dans un congrès hal-03260519v1

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03676503v1
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Edge terminations for 4H-SiC power devices: a critical issue

P Godignon , J Montserrat , J Rebollo , Dominique Planson
ECSCRM 2020-2021, Oct 2021, Tours, France
Communication dans un congrès hal-03418183v1

MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry
POWER 2021 (IMAPS), Nov 2021, Tours, France
Communication dans un congrès hal-03676940v1
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Investigation of SiC thyristors with varying amplifying gate design

S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , Luong Viêt Phung
European Conference on Silicon Carbide and Related Materials (ECSCRM2020) 2021, Oct 2021, Tours, France
Communication dans un congrès hal-03410752v1
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Joao Oliveira , Florent Loiselay , Hervé Morel , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩
Communication dans un congrès hal-02945913v1
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Besar Asllani , Hervé Morel , Pascal Bevilacqua , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩
Communication dans un congrès hal-02945919v1
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Analysis of Parasitic Elements in Power Modules Based on GaN Components

Joao Oliveira , Hervé Morel , Dominique Planson , Florent Loiselay
PCIM Europe 2020, Jul 2020, Nuremberg, Germany
Communication dans un congrès hal-02945892v1
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Static characteristics of 5 kV SiC BJTs and Darlington’s

Besar Asllani , Dominique Planson , Hervé Morel , T Lagier
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan
Communication dans un congrès hal-02428513v1
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Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Besar Asllani , Pascal Bevilacqua
Workshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France
Communication dans un congrès hal-02164000v1
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V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Besar Asllani , Alberto Castellazzi , Oriol Aviño Salvado , Asad Fayyaz , Hervé Morel
IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩
Communication dans un congrès hal-02099781v1
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Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC)

Camille Sonneville , Dominique Planson , Luong Viêt Phung , Pascal Bevilacqua , Besar Asllani
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23
Communication dans un congrès hal-02428502v1
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SiC lateral Schottky diode technology for integrated smart power converter

Jean-François Mogniotte , Christophe Raynaud , Mihai Lazar , Bruno Allard , Dominique Planson
2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩
Communication dans un congrès hal-01864545v1
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Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes

B Choucoutou , Besar Asllani , L V Phung , J B Fonder , Dominnique Tournier
European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès hal-02004841v1
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Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H

Teng Zhang , Christophe Raynaud , Dominique Planson
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02983328v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , J B Fonder , B Choucoutou
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Communication dans un congrès hal-01985994v1
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Besar Asllani , Hervé Morel , Dominique Planson , Asad Fayyaz , Alberto Castellazzi
ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩
Communication dans un congrès hal-01984359v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , A Castellazzi , Dominique Planson , Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04
Communication dans un congrès hal-02428531v1
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Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode

Teng Zhang , Christophe Raynaud , Dominique Planson
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès hal-02004837v1

Towards SiC thyristors with amplifying gate design

Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02983373v1
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Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors

Dominique Planson , Luong-Viet Phung , Besar Asllani , Pascal Bevilacqua , Hassan Hamad
e-MRS Fall Meeting, Sep 2018, Varsovie, Poland
Communication dans un congrès hal-02116919v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , A. Zaoui , G Grosset , Dominique Planson
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5
Communication dans un congrès hal-02428523v1
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Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes

Besar Asllani , J B Fonder , Pascal Bevilacqua , Dominique Planson , L. Phung
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States
Communication dans un congrès hal-02132576v1
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Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode

Dominique Planson , Besar Asllani , Hassan Hamad , Marie-Laure Locatelli , Lumei Wei
International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4
Communication dans un congrès hal-02138767v1
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Emergence of SiC Thyristors Featuring Amplifying Gate Design

Ralf Hassdorf , Sigo Scharnholz , Dirk Bauersfeld , Bertrand Vergne , Luong Viêt Phung
International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States
Communication dans un congrès hal-02004843v1
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Technology Route towards SiC Thyristor Devices with Amplifying Gate Design

S Scharnholz , R Hassdorf , D Bauersfeld , B Vergne , L V Phung
Compound Semiconductor Week 2017, May 2017, Berlin, Germany
Communication dans un congrès hal-03103484v1
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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski
ECSCRM'16, Sep 2016, Halkidiki, Greece
Communication dans un congrès hal-02138729v1
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Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC

Beverley Choucoutou , Luong Viet Phung , Pierre Brosselard , Michel Mermet-Guyennet , Dominique Planson
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès hal-01361668v1
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Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections

Julien Pezard , V. Souliere , Mihai Lazar , Naoufel Haddour , François Buret
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Communication dans un congrès hal-02138738v1

OBIC Technique Applied to Wide Bandgap Semiconductors

Dominique Planson , Hassan Hamad
40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal
Communication dans un congrès hal-01388036v1
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Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on Operation

Junichi Hasegawa , Loris Pace , Luong Viêt Phung , Mutsuko Hatano , Dominique Planson
International Conference on Solid State Devices and Materials 2016, Sep 2016, Tsukuba International Congress Center Tsukuba, Japan. ⟨10.7567/SSDM.2016.PS-14-17L⟩
Communication dans un congrès hal-04088082v1
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Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase

Tony Abi-Tannous , Maher Soueidan , G. Ferro , Mihai Lazar , Christophe Raynaud
ICSCRM, Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02138520v1
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Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors

Bertrand Vergne , Sigo Scharnholz , Dominique Planson , Dominique Tournier , Pierre Brosselard
International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic
Communication dans un congrès hal-02428642v1
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Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation

A Souguir-Aouani , N. Thierry-Jebali , Dominique Tournier , A Yvon , E Collard
ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44
Communication dans un congrès hal-02138522v1
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Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Davy Carole , Christian Brylinski , Dominique Planson
Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States
Communication dans un congrès hal-02428659v1
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Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , S Sharnholz , Bertrand Vergne
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02138523v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil
CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Communication dans un congrès hal-01388019v1
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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Dominique Planson
CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩
Communication dans un congrès hal-01388024v1

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02138529v1

Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes

Hassan Hamad , Pascal Bevilacqua , Christophe Raynaud , Dominique Planson
2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩
Communication dans un congrès hal-01388043v1
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Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad , Christophe Raynaud , Pascal Bevilacqua , Sigo Scharnholz , Dominique Planson
ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08
Communication dans un congrès hal-02133683v1
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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Dominique Planson , Pierre Brosselard , Karine Isoird , Mihai Lazar , Luong Viêt Phung
CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩
Communication dans un congrès hal-01388002v1
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Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson
ECSCRM'14, Sep 2014, Grenoble, France
Communication dans un congrès hal-02132486v1
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Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Berangere Toury-Pierre , Mihai Lazar
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065327v1
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Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures

Thibaut Chailloux , Cyril Calvez , Dominique Tournier , Dominique Planson
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065281v1
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Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique

Marc Petit , Seddik Bacha , Xavier Guillaud , Hervé Morel , Dominique Planson
1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France
Communication dans un congrès hal-01065154v1
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Optimisation de la terminaison d'une diode Schottky diamant haute tension

Houssam Arbess , Karine Isoird , Dominique Planson , Luong Viet Phung
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065274v1
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Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC

Hassan Hamad , Pascal Bevilacqua , Dominique Planson , Christophe Raynaud , Dominique Tournier
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065307v1
Image document

On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing

Tony Abi Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Bérangère Toury
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63
Communication dans un congrès hal-02428741v1
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Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage

Sigo Scharnholz , Luong Viêt Phung , Dominique Tournier , Bertrand Vergne , Ralf Hassdorf
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065352v1
Image document

4H-SiC VJFETs with Self-Aligned Contacts

Konstantinos Zekentes , Antonis Stavrinidis , George Konstantinidis , Maria Kayambaki , Konstantinos Vamvoukakis
ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75
Communication dans un congrès hal-02133681v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès hal-02133686v1
Image document

High temperature, Smart Power Module for aircraft actuators

Khalil El Falahi , Stanislas Hascoët , Cyril Buttay , Pascal Bevilacqua , Luong Viet Phung
HiTEN'13, Jul 2013, Oxford, United Kingdom
Communication dans un congrès hal-00874666v1

3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viêt Phung , Dominique Planson , Pierre Brosselard , Dominique Tournier , Christian Brylinski
Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩
Communication dans un congrès hal-04240572v1
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Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode

Pierre Brosselard , F Chevalier , B Proux , N Thierry-Jebali , Pascal Bevilacqua
International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France
Communication dans un congrès hal-04022951v1
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Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics

Thibault Chailloux , Cyril Calvez , Pascal Bevilacqua , Dominique Planson , Dominique Tournier
HiTEN'13, Jul 2013, Oxford, United Kingdom
Communication dans un congrès hal-03326669v1
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SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devices

T Chailloux , C Calvez , N Thierry-Jebaly , D. Tournier , Dominique Planson
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2013, Sep 2013, Miyazaki, Japan. pp.1122-1125, ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩
Communication dans un congrès hal-04169013v1
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Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport

N Thierry-Jebali , Mihai Lazar , A Vo-Ha , D Carole , V Soulière
International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan
Communication dans un congrès hal-04011693v1
Image document

Report de puce par frittage d'argent - mise en oeuvre et analyse

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)
Communication dans un congrès hal-00729156v1
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Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz , Ralf Hassdorf , Gontran Pâques , Bertrand Vergne , Dominique Planson
European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Sep 2012, Saint-Petersbourg, Russia. pp.986-989, ⟨10.4028/www.scientific.net/MSF.740-742.986⟩
Communication dans un congrès hal-04423357v1
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Thyristors GTO haute tension en carbure de silicium avec terminaison JTE gravée

Sigo Scharnholz , Gontran Pâques , Bertrand Vergne , Claudia Maurer , Dominique Planson
Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France
Communication dans un congrès hal-04423483v1
Image document

Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04362529v1
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Towards Very High Voltage SiC Power Devices

Dominique Planson , Pierre Brosselard , Dominique Tournier , L V Phung , C. Brylinski
PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩
Communication dans un congrès hal-02116906v1
Image document

Evaluation of silver-sintering die attach

Wissam Sabbah , Raphaël Riva , Stanislas Hascoët , Cyril Buttay , Stephane Azzopardi
7th CIPS, Mar 2012, Nuremberg, Germany. pp.237-243
Communication dans un congrès hal-00707733v1
Image document

Protections périphériques de diodes bipolaires 10 kV en SiC-4H

Duy Minh Nguyen , Runhua Huang , Bertrand Vergne , Pascal Bevilacqua , Philippe Godignon
14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France
Communication dans un congrès hal-04560471v1
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Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N4

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider
14ème EPF, Jul 2012, Bordeaux, France. 4 p
Communication dans un congrès hal-01005917v1
Image document

PASChAC, système automatisé de caractérisation de composants sur wafer

Bertrand Vergne , Gontran Pâques , Claudia Maurer , Sigo Scharnholz , Pierre Brosselard
Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France
Communication dans un congrès hal-02282734v1
Image document

A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET

F Chevalier , G Grosset , L Dupuy , Dominique Tournier , Dominique Planson
HETECH, Nov 2012, Barcelone, France
Communication dans un congrès hal-01113179v1

Using a two step plasma etching process for diamond power devices

F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider
International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain
Communication dans un congrès hal-03966086v1

p-type SiC growth on diamond substrate by VLS Transport

Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-04423301v1
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Protections périphériques des composants 1200 V

Florian Chevalier , Pierre Brosselard , D. Tournier , Bertrand Vergne , Nicolas Dheilly
14ème EPF, Jul 2012, Bordeaux, France. 4 p
Communication dans un congrès hal-04560447v1
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Design of an integrated power converter in Wide Band Gap for harsh environments

Jean-François Mogniotte , Dominique Tournier , Pascal Bevilacqua , Philippe Godignon , Dominique Planson
Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany
Communication dans un congrès hal-02124203v1

Electrical characteristics (I-V) of field plate protected vertical diamond Schottky diodes

F. Thion , K. Isoird , Dominique Planson , Marie-Laure Locatelli , Henri Schneider
International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain
Communication dans un congrès hal-03966084v1
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Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët , Cyril Buttay , Dominique Planson , Rodica Chiriac , Amandine Masson
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-00759987v2
Image document

Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport

Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo-Ha , Davy Carole , Véronique Soulière
Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04366810v1
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Edge termination design improvements for 10 kV 4H-SiC bipolar diodes

D M Nguyen , R Huang , L V Phung , Maxime Berthou , P Godignon
European Conference on Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia
Communication dans un congrès hal-03316271v1
Image document

Design and characterization of a novel 3.3 kV 4H-SiC JFET

Florian Chevalier , Pierre Brosselard , D. Tournier , Grégory Grosset , Lionel Dupuy
Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04048180v1
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SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements

Mihai Lazar , François Jomard , Duy Minh Nguyen , Christophe Raynaud , Gontran Pâques
ICSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747300v1
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Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC

Farah Laariedh , Mihai Lazar , Pierre Cremilleu , Jean-Louis Leclercq , Dominique Planson
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩
Communication dans un congrès hal-00661507v1
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Pulse characterization of optically triggered SiC thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM'2011), Philipp Neudeck, Sep 2011, Cleveland, United States. pp.FR-1A-3
Communication dans un congrès hal-00747341v1

Parallel and serial association of SiC light triggered thyristors

Nicolas Dheilly , Gontran Pâques , Sigo Scharnholz , Dominique Planson
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France
Communication dans un congrès hal-00661520v1

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747301v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès hal-00661500v1

Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Communication dans un congrès hal-00661511v1

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen , Christophe Raynaud , Mihai Lazar , Gontran Pâques , Sigo Scharnholz
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747298v1
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Réalisation de contact ohmique sur SiC-4H type P

Farah Laariedh , Mihai Lazar , Pierre Cremillieu , Jean -Louis Leclercq , Dominique Planson
JNRDM2011, May 2011, Paris, France
Communication dans un congrès hal-04560246v1
Image document

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Gabriel Civrac , Farah Laariedh , Nicolas Thierry-Jebali , Mihai Lazar , Dominique Planson
International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩
Communication dans un congrès hal-00747295v1
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Wilfried Vervisch , Julian Duchaine
WOCSDICE, May 2011, Catania, Italy. pp.181
Communication dans un congrès hal-00661522v1

Perspectives on SiC and III-N Based Devices for Power Electronics

Christian Brylinski , Dominique Planson
220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩
Communication dans un congrès hal-02865456v1
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Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

Mihai Lazar , Fabrice Enoch , Farah Laariedh , Dominique Planson , Pierre Brosselard
CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩
Communication dans un congrès hal-00661443v1

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Duy Minh Nguyen , Gontran Pâques , Nicolas Dheilly , Christophe Raynaud , Dominique Tournier
CSCRM, Aug 2010, Oslo, Norway
Communication dans un congrès hal-00661470v1
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Graded Etched Junction Termination for SiC Thyristors

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Rik W. de Doncker , Sigo Scharnholz
European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Aug 2010, Oslo, Norway
Communication dans un congrès hal-04347104v1

SiC BJT driver applied to a 2 kW inverter: Performances and limitations

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson , Bruno Allard
6th CIPS, Mar 2010, Nuremberg, Germany
Communication dans un congrès hal-00579223v1

Conception d'une protection périphérique originale pour composants bipolaires en carbure de silicium (SiC)

Nicolas Dheilly , Dominique Planson , Gontran Pâques , Sigo Scharnholz
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618709v1

Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus

Bertrand Vergne , Gontran Pâques , Jens-Peter Konrath , Sigo Scharnholz , Nicolas Dheilly
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618684v1
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Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height

Gontran Pâques , Nicolas Dheilly , Dominique Planson , Sigo Scharnholz , Rik W. de Doncker
European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway
Communication dans un congrès hal-04349694v1
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Protection périphérique pour composants de puissance en diamant

Fabien Thion , Karine Isoird , Dominique Planson , Marie-Laure Locatelli
13ème EPF, Jun 2010, Saint-Nazaire, France. 4p
Communication dans un congrès hal-00618708v1
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Optical triggering of 4H-SiC thyristors with a 365 nm UV LED

Nicolas Dheilly , Gontran Pâques , Dominique Planson , P Bevilacqua , S Scharnholz
European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩
Communication dans un congrès hal-03990671v1

Réalisation de Diodes SiC Simples pour l'Etude de Passivations

Gontran Pâques , Sigo Scharnholz , Jens-Peter Konrath , Bertrand Vergne , Nicolas Dheilly
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618701v1
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Simulation and design of junction termination structures for diamond Schottky diodes

Fabien Thion , Karine Isoird , Dominique Planson , M-L Locatelli , H Ding
European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary
Communication dans un congrès hal-03656932v1
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State of the art of High Temperature Power Electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès hal-00413349v1

A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT

Dominique Tournier , Pascal Bevilacqua , Pierre Brosselard , Dominique Planson
CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩
Communication dans un congrès hal-00496976v1
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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses

Christophe Raynaud , D M Nguyen , Pierre Brosselard , A Pérez-Tomás , Dominique Planson
European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain
Communication dans un congrès hal-03331775v1

Modeling and high temperature characterization of SiC-JFET

Rami Mousa , Dominique Planson , Hervé Morel , Bruno Allard , Christophe Raynaud
IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩
Communication dans un congrès hal-00369420v1

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua
ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Communication dans un congrès hal-00391369v1

SiC JFET for high temperature power switches

Dominique Bergogne , Dominique Tournier , Rami Mousa , Mohsen Shafiee Khoor , Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4
Communication dans un congrès hal-00373058v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel
13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
Communication dans un congrès hal-00373016v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès hal-00372982v1

Current limiting with SiC JFET structures

Dominique Tournier , Dominique Bergogne , Asif Hamoud , Dominique Planson , Rami Mousa
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5
Communication dans un congrès hal-00373046v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Communication dans un congrès hal-02958620v1
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New Applications in Power Electronics Based on SiC Power Devices

Hervé Morel , Dominique Bergogne , Dominique Planson , Bruno Allard , Régis Meuret
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩
Communication dans un congrès hal-02958610v1
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Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC

D M Nguyen , Christophe Raynaud , Mihai Lazar , H Vang , Dominique Planson
ICSCRM'2007, Oct 2007, Otsu, Japan
Communication dans un congrès hal-02961607v1
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Deep SiC etching with RIE

Mihai Lazar , Heu Vang , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
E-MRS 2006, May 2006, Nice, France. pp.3886392
Communication dans un congrès hal-03305997v1

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Erwan Oliviero , Mihai Lazar , Heu Vang , Christiane Dubois , Pierre Cremilleu
CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩
Communication dans un congrès hal-00368931v1
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Ni-Al Ohmic contact to p-type 4H-SiC

Heu Vang , Mihai Lazar , Pierre Brosselard , Christophe Raynaud , Pierre Cremilleu
2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩
Communication dans un congrès hal-03316263v1
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High temperature operating converter

Dominique Bergogne , Pascal Bevilacqua , Dominique Planson , Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. pp.201-204
Communication dans un congrès hal-00413394v1
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Towards an integrated inverter based on lateral JFET SiC

J. Gié , Mihai Lazar , Dominique Planson , Dominique Bergogne , Pascal Bevilacqua
4th CIPS, Jun 2006, Naples, Italy. pp.171-176
Communication dans un congrès hal-00413390v1

Current sensing for SiC Power Devices

Dominique Tournier , Miquel Vellvehi , Philippe Godignon , Josep Montserrat , Dominique Planson
CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.1215-1218
Communication dans un congrès hal-00391433v1

300 °C operating junction temperature inverter leg investigations

Dominique Bergogne , Pascal Bevilacqua , Sabrine M'Rad , Dominique Planson , Hervé Morel
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès hal-00413402v1
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P-type SiC layers formed by VLS induced selective epitaxial growth

Mihai Lazar , C Jacquier , Ch Dubois , Christophe Raynaud , G Ferro
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès hal-02953086v1
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Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits

Dominique Planson , Dominique Tournier , Jean-Pierre Chante , Pascal Bevilacqua , Christophe Raynaud
International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China
Communication dans un congrès hal-02468376v1
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A 3.5 kV thyristor in 4H-SiC with a JTE periphery

Pierre Brosselard , Thierry Bouchet , Dominique Planson , Sigo Scharnholz , Gontran Pâques
European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy
Communication dans un congrès hal-02953080v1

Silicon Carbide specific components for power electronics system protection

J.-P Chante , Dominique Planson , Christophe Raynaud , Marie-Laure Locatelli , M. Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02503449v1
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Current limitation with SiC devices

D Tournier , P. Godignon , Dominique Planson , F. Nallet , J. Millán
10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France
Communication dans un congrès hal-02497590v1
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The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study.

M Lazar , G Cardinali , C Raynaud , A Poggi , Dominique Planson
International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02941715v1
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Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor

Pierre Brosselard , Volker Zorngiebel , Dominique Planson , Sigo Scharnholz , J.-P Chante
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02503456v1
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Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

G Brezeanu , Philippe Godignon , E Dimitrova , C Raynaud , Dominique Planson
International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02937545v1
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Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment

Marie-Laure Locatelli , Karine Isoird , Sorin Dinculescu , Vincent Bley , Thierry Lebey
10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France
Communication dans un congrès hal-02492270v1

On chip temperature monitoring of a SiC current limiter

Dominique Tournier , Philippe Godignon , José Millán , Jean-Pierre Chante , Dominique Planson
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02949618v1
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Electrothermal simulations of silicon carbide current limiting devices

Dominique Planson , J.P. Chante , M. Lazar , P. Brosselard , Christophe Raynaud
2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩
Communication dans un congrès hal-02498210v1
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Active clamping of IGBT: capacitor replaces TRANSIL diodes

Pierre Lefranc , Dominique Bergogne , Dominique Planson , Bruno Allard , Hervé Morel
10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France
Communication dans un congrès hal-02497603v1
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Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension

Christophe Raynaud , M. Lazar , Dominique Planson , J.-P Chante , Z. Sassi
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France
Communication dans un congrès hal-02498145v1
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SiC-based current limiter devices

Jean-Pierre Chante , Dominique Tournier , Dominique Planson , Christophe Raynaud , Mihai Lazar
International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩
Communication dans un congrès hal-04032970v1
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Design and simulation of a planar anode GTO thyristor on SiC

Pierre Brosselard , Dominique Planson , Sigo Scharnholz , V. Zorngiebel , Mihai Lazar
CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩
Communication dans un congrès hal-00410085v1
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Limiteur de courant à forte densité de puissance en carbure de silicium

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud
Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France
Communication dans un congrès hal-04398450v1

Characterization of a 4H-SiC High Power Density Controlled Current Limiter

Dominique Tournier , Xavier Jorda , Josep Montserrat , Dominique Planson , Christophe Raynaud
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02458130v1
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A 4H-SiC high-power-density VJFET as controlled current limiter

Dominique Tournier , Philippe Godignon , Josep Montserrat , Dominique Planson , Christophe Raynaud
Industry Applications Society (IAS'02), Oct 2002, Pittsburgh (Pennsylvania), United States. pp.2248-2251
Communication dans un congrès hal-02477074v1
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Fabrication and Characterisation of High Voltage SiC-Thyristors

Volker Zorngiebel , S. Scharnholz , E. Spahn , P Brosselard , Jean-Pierre Chante
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02485104v1
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A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

François Templier , Nicolas Daval , Léa Di Cioccio , Daniel Bourgeat , Fabrice Letertre
2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩
Communication dans un congrès hal-02298409v1
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OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension

S.R. Wang , Christophe Raynaud , Dominique Planson , Mihai Lazar , Jean-Pierre Chante
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02464381v1
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Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

F. Nallet , P. Godignon , Dominique Planson , Christophe Raynaud , J.P. P Chante
14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩
Communication dans un congrès hal-02471269v1
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC

Roberta Nipoti , Francesco Moscatelli , Andrea Scorzoni , Antonella Poggi , Gian Carlo Cardinali
2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩
Communication dans un congrès hal-02485106v1
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Substrat SiCOI : Avancées vers les applications « System on Chip »

Nicolas Daval , François Templier , Fabrice Letertre , Marie-Laure Locatelli , Dominique Planson
EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France
Communication dans un congrès hal-04400220v1
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COMPOSANT NνN POUR L'ETUDE DE LA ZCEM (ZONE DE CHARGE D'ESPACE MIXTE) DES TRANSISTORS MOS

Guillaume Verneau , Laurent Aubard , Thierry Bouchet , Jacques Arnould , Pierre Brosselard
Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France
Communication dans un congrès hal-04390458v1

SiC On Insulator as substrate for power Schottky diodes

N. Daval , F Templier , F. Letertre , Dominique Planson , Léa Di Cioccio
European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden
Communication dans un congrès hal-02464356v1
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Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02471274v1
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Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current Limiter

Dominique Tournier , Phillippe Godignon , Josep Montserrat , Dominique Planson , Jean-Pierre P Chante
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02476207v1
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4H-SiC bipolar power diodes realized by ion implantation

M. Lazar , Dominique Planson , K. Isoird , Marie-Laure Locatelli , Christophe Raynaud
CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩
Communication dans un congrès hal-02145397v1
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Realization of a High Current and Low RON 600V Current Limiting Device

F Nallet , P Godignon , Dominique Planson , Christophe Raynaud , Jean-Pierre P Chante
International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02975963v1
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A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects

M. Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02476227v1

Experimental characterization of a 4H-SiC high voltage current limiting device

Franck Nallet , Dominique Planson , Philippe Godignon , Marie-Laure Locatelli , Mihai Lazar
European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France
Communication dans un congrès hal-03714731v1

Study of 6H-SiC high voltage bipolar diodes under reverse biases

Karine Isoird , Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud
European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France
Communication dans un congrès hal-03712596v1
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Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application

N. Arssi , M.L. Locatelli , Dominique Planson , J.P. Chante , V. Zorngiebel
CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344, ⟨10.1109/SMICND.2001.967479⟩
Communication dans un congrès hal-02145398v1

Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing

Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
Communication dans un congrès hal-02275712v1
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Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization

K Isoird , M Lazar , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson
ICSCRM, Oct 2001, Tsukuba, Japan
Communication dans un congrès hal-02975956v1
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

F. Nallet , A. Senes , Dominique Planson , Marie-Laure Locatelli , J.P. Chante
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩
Communication dans un congrès hal-02972084v1
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components

Dominique Planson , S. Margenat , F. Nallet , Hervé Morel , Marie-Laure Locatelli
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩
Communication dans un congrès hal-04386919v1
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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

F. Nallet , A Sénès , Dominique Planson , M.L. Locatelli , J.P. Chante
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.396-401, ⟨10.1109/IPEMC.2000.885436⟩
Communication dans un congrès hal-04386905v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson
European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72
Communication dans un congrès hal-02151711v1

Silicon carbide power devices

J.P. Chante , M.L. Locatelli , Dominique Planson , L. Ottaviani , E. Morvan
1998 International Semiconductor Conference. CAS'98 Proceedings, Oct 1998, Sinaia, Romania. pp.125-134, ⟨10.1109/SMICND.1998.732305⟩
Communication dans un congrès hal-04277218v1
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A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS

Shan-Qi Zhao , Dominique Planson , Jean-Pierre Chante
7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany
Communication dans un congrès hal-02968512v1
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The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC

A A Lebedev , A M Strel'Chuk , S. Ortolland , Christophe Raynaud , Marie-Laure Locatelli
International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan
Communication dans un congrès hal-03712441v1
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Study of Silicon Carbide high voltage ability: experimental results on expitaxial-emitter and implanted-emitter diodes

Marie-Laure Locatelli , Sylvie Ortolland , Frédéric Lanois , Dominique Planson , Thierry Billon
International Seminar on Silicon Carbide Semiconductor and SiC-based devices, Sep 1995, Novgorod, Russia
Communication dans un congrès hal-02972067v1
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Realization and characterization of vertical PIN diode on 100 diamond

Florent Sevely , Josiane Tasselli , Karine Isoird , Luong Viêt Phung , Camille Sonneville
33rd International Conference on Diamond and Carbon Materials, Sep 2023, Palma, Spain. , 2023
Poster de conférence hal-04193251v1

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation

Christophe Raynaud , Duy Minh Nguyen , Nicolas Dheilly , Dominique Tournier , Pierre Brosselard
Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009
Chapitre d'ouvrage hal-00661529v1

Silicon carbide applications in power electronics

Marie-Laure Locatelli , Dominique Planson
Robert Perret. Power Electronics Semiconductor Devices, Wiley-ISTE, pp.185-265, 2009
Chapitre d'ouvrage hal-00661525v1

Applications du carbure de silicium en électronique de puissance

Marie-Laure Locatelli , Dominique Planson
Robert Perret. Mise en oeuvre des composants électroniques de puissance, HERMES, pp.243-324, 2003
Chapitre d'ouvrage hal-03925159v1