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Lionel Trojman

Directeur de la Recherche à l'Isep
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  • 143142
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  • https://www.isep.fr/la-recherche-a-lisep/

Présentation

Domaines de recherche


Compétences

Physique des semiconducteurs design de circuits analogiques process de fabrications techno CMOS sciences de materiaux Physique de la matière condensée Physique du solide

Publications

Natural Language Processing for Arabic Sentiment Analysis: A Systematic Literature Review

Souha Al Katat , Chamseddine Zaki , Hussein Hazimeh , Ibrahim Bitar , Rafael Angarita
IEEE Transactions on Big Data, In press, pp.1-18. ⟨10.1109/TBDATA.2024.3366083⟩
Article dans une revue hal-04462327v1

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Lionel Trojman , Eliana Acurio , Brice de Jaeger , Niels Posthuma , Stefaan Decoutere
Solid-State Electronics, 2023, 210, pp.108778. ⟨10.1016/j.sse.2023.108778⟩
Article dans une revue hal-04462117v1
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Efficiency of Double-barrier Magnetic Tunnel Junction-based Digital eNVM array for Neuro-inspired Computing

Tatiana Moposita , Esteban Garzón , Andrei Vladimirescu , Marco Lanuzza , Felice Crupi
IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70 (3), pp.1254-1258. ⟨10.1109/TCSII.2023.3240474⟩
Article dans une revue hal-04186109v1
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SIMPLY+: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing

Tatiana Moposita , Esteban Garzón , Raffaele de Rose , Felice Crupi , Andrei Vladimirescu
IEEE Access, 2023, 11, pp.144084-144094. ⟨10.1109/ACCESS.2023.3344197⟩
Article dans une revue hal-04462146v1
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Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs

Esteban Garzón , Raffaele de Rose , Felice Crupi , Lionel Trojman , Adam Teman
Solid-State Electronics, 2022, 194, pp.108315. ⟨10.1016/j.sse.2022.108315⟩
Article dans une revue hal-03812330v1
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Pédagogie hybride pour l’apprentissage de la conception d’un microprocesseur simplifié niveau master avec μWind

Lionel Trojman , Fatima Viteri , E. Sicard
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2022, 21, pp.1005. ⟨10.1051/j3ea/20221005⟩
Article dans une revue hal-03812282v1

Estudio de Confiabilidad en Diodos Basados en AlGaN/GaN Durante el Estado de Encendido

Eliana Acurio , Lionel Trojman , Brice de Jaeger , Benoit Bakeroot
Revista Politécnica, 2022, 50 (1), pp.27-34. ⟨10.33333/rp.vol50n1.03⟩
Article dans une revue hal-03812343v1
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Breast cancer, screening and diagnostic tools: All you need to know

Diego Barba , Ariana León-Sosa , Paulina Lugo , Daniela Suquillo , Fernando Torres
Critical Reviews in Oncology/Hematology, 2021, 157, pp.103174. ⟨10.1016/j.critrevonc.2020.103174⟩
Article dans une revue hal-03218320v1
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Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration

Silvana Guitarra , Laurent Raymond , Lionel Trojman
Solid-State Electronics, 2021, 176, pp.107947. ⟨10.1016/j.sse.2020.107947⟩
Article dans une revue hal-03218283v1
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Energy Efficient Self-Adaptive Dual Mode Logic Address Decoder

Kevin Vicuña , Cristhopher Mosquera , Ariana Musello , Sara Benedictis , Mateo Rendón
Electronics, 2021, 10 (9), pp.1052. ⟨10.3390/electronics10091052⟩
Article dans une revue hal-03218329v1
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Relaxing Non-Volatility for Energy-Efficient DMTJ Based Cryogenic STT-MRAM

Esteban Garzón , Raffaele De Rose , Felice Crupi , Lionel Trojman , Adam Teman
Solid-State Electronics, 2021, pp.108090. ⟨10.1016/j.sse.2021.108090⟩
Article dans une revue hal-03254839v1
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A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks

Massimo Vatalaro , Marco Lanuzza , Felice Crupi , Tatiana Moposita , Lionel Trojman
Electronics, 2021, 10 (9), pp.1004. ⟨10.3390/electronics10091004⟩
Article dans une revue hal-03218334v1
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From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits

Lionel Trojman , Eduardo Holguin , Marco Villegas , Luis-Miguel Procel , Ramiro Taco
Electronics, 2021, 11 (4), pp.525. ⟨10.3390/electronics11040525⟩
Article dans une revue hal-03575546v1

Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework

Esteban Garzón , Raffaele de Rose , Felice Crupi , Lionel Trojman , Giovanni Finocchio
Systems Integration, 2020, 71, pp.56-69. ⟨10.1016/j.vlsi.2020.01.002⟩
Article dans une revue hal-02951681v1

Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress

Eliana Acurio , Lionel Trojman , Felice Crupi , Tatiana Moposita , Brice de Jaeger
IEEE Transactions on Device and Materials Reliability, 2020, 20 (1), pp.167-171. ⟨10.1109/TDMR.2020.2969638⟩
Article dans une revue hal-02951689v1

Influence of GaN- and Si 3 N 4 -Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

Eliana Acurio , Felice Crupi , Nicolo Ronchi , Brice de Jaeger , Benoit Bakeroot
IEEE Transactions on Electron Devices, 2019, 66 (2), pp.883-889. ⟨10.1109/TED.2018.2888809⟩
Article dans une revue hal-02951707v1

Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model

Lionel Trojman , Lars-Åke Ragnarsson , Nadine Collaert
Solid-State Electronics, 2019, 154, pp.24-30. ⟨10.1016/j.sse.2019.02.003⟩
Article dans une revue hal-02952498v1

Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework

Esteban Garzón , Lionel Trojman , Felice Crupi , Marco Lanuzza , Raffaele de Rosa
Microelectronic Engineering, 2019, 215, pp.111009. ⟨10.1016/j.mee.2019.111009⟩
Article dans une revue hal-02952495v1

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

Eliana Acurio , Felice Crupi , Nicolo Ronchi , Brice de Jaeger , Benoit Bakeroot
IEEE Transactions on Electron Devices, 2018, 65 (5), pp.1765-1770. ⟨10.1109/TED.2018.2818409⟩
Article dans une revue hal-02951714v1

Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Eliana Acurio , Felice Crupi , Paolo Magnone , Lionel Trojman , Fernando Iucolano
Microelectronic Engineering, 2017, 178, pp.42-47. ⟨10.1016/j.mee.2017.04.044⟩
Article dans une revue hal-02955194v1
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On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Eliana Acurio , Felice Crupi , Paolo Magnone , Lionel Trojman , Gaudenzio Meneghesso
Solid-State Electronics, 2017, 132, pp.49-56. ⟨10.1016/j.sse.2017.03.007⟩
Article dans une revue hal-02952520v1

A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

L. Procel , F. Crupi , Lionel Trojman , J. J. Franco , B. Kaczer
IEEE Transactions on Device and Materials Reliability, 2016, 16 (1), pp.98-100. ⟨10.1109/TDMR.2015.2511085⟩
Article dans une revue hal-02952182v1

Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases

Lionel Trojman
IEEE Latin America Transactions, 2016, 14 (10), pp.4235-4240. ⟨10.1109/TLA.2016.7786299⟩
Article dans une revue hal-02952177v1

Study of the scaling and the temperature for RERAM cells using the QPC model

Lionel Trojman , Silvana Guitarra , Luis Miguel Procel , Laurent Raymond
IEEE Latin America Transactions, 2016, 14 (12), pp.4693-4698. ⟨10.1109/TLA.2016.7816999⟩
Article dans une revue hal-02952173v1

A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Luis Miguel Procel , Felice Crupi , Jacopo Franco , Lionel Trojman , Ben Kaczer
Microelectronic Engineering, 2015, 147, pp.72-74. ⟨10.1016/j.mee.2015.04.055⟩
Article dans une revue hal-02952535v1

Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs

Luis Miguel Procel , Felice Crupi , Jacopo Franco , Lionel Trojman , Ben Kaczer
IEEE Electron Device Letters, 2014, 35 (12), pp.1167-1169. ⟨10.1109/LED.2014.2361342⟩
Article dans une revue hal-02952196v1

Mobility Improvement Study for 8-Å-EOT HfO₂ UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

Lionel Trojman , Lars-Åke Ragnarsson , Nadine Collaert
IEEE Transactions on Electron Devices, 2014, 61 (11), pp.3632-3638. ⟨10.1109/TED.2014.2357673⟩
Article dans une revue hal-02952199v1

DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory

Vicenzo Maccaronio , Luis-Miguel Procel , Felice Crupi , Ludovic Goux , Eddy Simoens
Microelectronic Engineering, 2013, 107, pp.1-5. ⟨10.1016/j.mee.2013.02.076⟩
Article dans une revue hal-02952546v1

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO 2 -based resistive random access memories

Luis-Miguel Procel , Lionel Trojman , Jorge Moreno , Felice Crupi , Vicenzo Maccaronio
Journal of Applied Physics, 2013, 114 (7), pp.074509. ⟨10.1063/1.4818499⟩
Article dans une revue hal-02952394v1

High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects

Lionel Trojman , L. Pantisano , L. Ragnarsson
IEEE Transactions on Electron Devices, 2012, 59 (7), pp.1856-1862. ⟨10.1109/TED.2012.2193402⟩
Article dans une revue hal-02952204v1

Understanding and Importance of Defects in Advanced Materials

Luigi Pantisano , Lionel Trojman , Rob O'Connor , Ben Kaczer , Guido Groeseneken
ECS Transactions, 2009, 18 (1), pp.651
Article dans une revue hal-02953478v1

Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)—Does the Dielectric Quality Matter?

Lionel Trojman , Luigi Pantisano , Morin Dehan , Isabelle Ferain , Simone Severi
IEEE Transactions on Electron Devices, 2009, 56 (12), pp.3009-3017. ⟨10.1109/TED.2009.2032280⟩
Article dans une revue hal-02953781v1

Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

Lionel Trojman , Luigi Pantisano , Isabelle Ferain , Simone Severi , Herman Maes
IEEE Transactions on Electron Devices, 2008, 55 (12), pp.3414-3420. ⟨10.1109/TED.2008.2006548⟩
Article dans une revue hal-02952208v1

Trapping in 1nm EOT high-k/MG

Mohamed Zahid , Luigi Pantisano , Robin Degraeve , Marc Aoulaiche , Lionel Trojman
ECS Transactions, 2008, 16 (5), pp.77
Article dans une revue hal-02953461v1

On the Impact of Defects Close to the Gate Electrode on the Low-Frequency $\hbox{1}/f$ Noise

Paolo Magnone , Luigi Pantisano , Felice Crupi , Lionel Trojman , Calogero Pace
IEEE Electron Device Letters, 2008, 29 (9), pp.1056-1058. ⟨10.1109/LED.2008.2001551⟩
Article dans une revue hal-02952213v1

Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation

Barry O'Sullivan , Vidya Kaushik , J.-L. Everaert , Lionel Trojman , Lars-Ke Ragnarsson
IEEE Transactions on Electron Devices, 2007, 54 (7), pp.1771-1775. ⟨10.1109/TED.2007.898460⟩
Article dans une revue hal-02952277v1

Nitrogen Incorporation in HfSiO(N)/TaN Gate Stacks: Impact on Performances and NBTI

M. Aoulaiche , M. Houssa , W. Deweerd , Lionel Trojman , T. Conard
IEEE Electron Device Letters, 2007, 28 (7), pp.613-615. ⟨10.1109/LED.2007.899435⟩
Article dans une revue hal-02952264v1

High-k Metal Gate MOSFETs: Impact of Extrinsic Process Condition on the Gate-Stack Quality—A Mobility Study

Lionel Trojman , Lars-Ke Ragnarsson , Barry O'Sullivan , Maarten Rosmeulen , Vidya Kaushik
IEEE Transactions on Electron Devices, 2007, 54 (3), pp.497-503. ⟨10.1109/TED.2006.890230⟩
Article dans une revue hal-02952297v1

Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks

Isabelle Ferain , Luigi Pantisano , Anil Kottantharayil , Julie Pietry , Lionel Trojman
Microelectronic Engineering, 2007, 84 (9-10), pp.1882-1885. ⟨10.1016/j.mee.2007.04.074⟩
Article dans une revue hal-02952528v1

Performance assessment of (110) p-FET high-κ/MG: is it mobility or series resistance limited?

Lionel Trojman , Luigi Pantisano , Simone Severi , Enrique San Andres , Thomas Hoffman
Microelectronic Engineering, 2007, 84 (9-10), pp.2058-2062. ⟨10.1016/j.mee.2007.04.090⟩
Article dans une revue hal-02952501v1

The Electrochemical Society High-k Characterization by RFCV

Enrique San Andres , Luigi Pantisano , Philippe Roussel , Maria Toledano-Luque , Lionel Trojman
ECS Transactions, 2007, 11 (4)
Article dans une revue hal-02953456v1

Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

L.-A. Ragnarsson , S. Severi , Lionel Trojman , K.D. Johnson , D.P. Brunco
IEEE Transactions on Electron Devices, 2006, 53 (7), pp.1657-1668. ⟨10.1109/TED.2006.876274⟩
Article dans une revue hal-02952318v1

RF Split Capacitance–Voltage Measurements of Short-Channel and Leaky MOSFET Devices

E. San Andres , L. Pantisano , J. Ramos , S. Severi , Lionel Trojman
IEEE Electron Device Letters, 2006, 27 (9), pp.772-774. ⟨10.1109/LED.2006.881089⟩
Article dans une revue hal-02952311v1

Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility

Guilherme Lujan , Wim Magnus , Bart Sorée , Lars-Åke Ragnarsson , Lionel Trojman
Microelectronic Engineering, 2005, 80, pp.82-85. ⟨10.1016/j.mee.2005.04.047⟩
Article dans une revue hal-02952537v1

Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

Lionel Trojman , Lars-Åke Ragnarsson , Luigi Pantisano , Guilherme Lujan , Michel Houssa
Microelectronic Engineering, 2005, 80, pp.86-89. ⟨10.1016/j.mee.2005.04.107⟩
Article dans une revue hal-02952523v1

Effects of the compliance current in the electroforming process of HfO 2 -based ReRAM devices

Silvana Guitarra , Lionel Trojman , Laurent Raymond
2023 IEEE Latin American Electron Devices Conference (LAEDC), Jul 2023, Puebla, Mexico. pp.1-4, ⟨10.1109/LAEDC58183.2023.10209142⟩
Communication dans un congrès hal-04186168v1
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Enhancement-mode p-GaN Comparators for power applications

Nataly Pozo , Luis-Miguel Prócel , Lionel Trojman
2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Jun 2023, Valencia, Spain. pp.197-200, ⟨10.1109/PRIME58259.2023.10161779⟩
Communication dans un congrès hal-04186145v1
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Analysis and Design of a Self-Powered VEH System Based on ULP Comparator

Eduardo Holguin , Luis Miguel Prócel , Andrei Vladimirescu , Lionel Trojman , Alexis Brenes
2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS), Lionel Trojman; Luis-Miguel Procel, Feb 2023, Quito, Ecuador. ⟨10.1109/LASCAS56464.2023.10108276⟩
Communication dans un congrès hal-04186120v1
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Conception de cellules nano-CMOS -Perspectives à dix ans

Etienne Sicard , Sonia Ben Dhia , Lionel Trojman
7èmes Journées Pédagogiques - JPCNFM 2023, INSA Toulouse, Nov 2023, Toulouse, France
Communication dans un congrès hal-04502940v1
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Voltage and Technology Scaling of DMTJ-based STT-MRAMs for Energy-Efficient Embedded Memories

Esteban Garzon , Ramiro Taco , Luis Miguel Procel , Lionel Trojman , Marco Lanuzza
IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, France. pp.01-04, ⟨10.1109/LASCAS53948.2022.9789054⟩
Communication dans un congrès hal-03812303v1
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DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems

Kevin Vicuna , Luis-Miguel Procel , Lionel Trojman , Ramiro Taco
2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789065⟩
Communication dans un congrès hal-03812290v1
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Low-Cost Smart Living Environment Monitoring Systems from a Metrological Point of View

Juan-Jose Jimenez , Domenico Luca Carni , Lionel Trojman , Luis-Miguel Procel , Francesco Lamonaca
IEEE International Workshop on Metrology for Living Environment (MetroLivEn) 2022, May 2022, Cosenza, Italy. pp.174-179, ⟨10.1109/MetroLivEnv54405.2022.9826978⟩
Communication dans un congrès hal-03812317v1

Design and optimization of a Vibrational MEMS-Based Energy Harvester

Eduardo Holguin , Lionel Trojman , Luis Miguel Procel , Alexis Brenes , Andrei Vladimirescu
2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Jun 2022, Villasimius, France. pp.209-212, ⟨10.1109/PRIME55000.2022.9816839⟩
Communication dans un congrès hal-03812325v1
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Energy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells

Ariana Musello , Santiago Perez , Marco Villegas , Luis Miguel Procel , Ramiro Taco
IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, Chile. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789086⟩
Communication dans un congrès hal-03812310v1
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Voltage-to-Voltage Sigmoid Neuron Activation Function Design for Artificial Neural Networks

Tatiana Moposita , Lionel Trojman , Felice Crupi , Marco Lanuzza , Andrei Vladimirescu
IEEE 13th Latin America Symposium on Circuits and System (LASCAS) 2022, Mar 2022, Puerto Varas, France. pp.1-4, ⟨10.1109/LASCAS53948.2022.9789075⟩
Communication dans un congrès hal-03812298v1
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Pédagogie hybride pour l'apprentissage de la conception d'un microprocesseur simplifié niveau master avec µWind

Lionel Trojman , F. V. Viteri , E. Sicard
JPCNFM 2021 :16e journées pédagogiques du CNFM (Coordination Nationale pour la Formation en Micro-électronique et en nanotechnologies), Oct 2021, St Malo, France. ⟨10.1051/j3ea/20221005⟩
Communication dans un congrès hal-03810252v1
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Assessment of 10 nm Tunnel- FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits

Mateo Rendon , Christian Cao , Kevin Landazuri , Luis Miguel Prócel , Lionel Trojman
2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-6, ⟨10.1109/ETCM53643.2021.9590651⟩
Communication dans un congrès hal-03575604v1
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Implementation of 32nm MD5 Crypto-Processor using Different Topographical Synthesis Techniques and Comparison with 500nm Node

Juan-Jose Jimenez , Andre Borja , Laetitia Silly , Luis-Miguel Procel , Lionel Trojman
2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM53643.2021.9590739⟩
Communication dans un congrès hal-03575909v1
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ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

Eliana Acurio , Lionel Trojman , Brice de Jaeger , Benoit Bakeroot , Stefaan Decoutere
IEEE International Reliability Physics Symposium (IRPS 2021), Mar 2021, Monterey (virtual conference), United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405163⟩
Communication dans un congrès hal-03218246v1
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Harvesting performances of a gap-closing MEMS energy harvester with squeeze-film damping

Eduardo Holguin , Alexis Brenes , Lionel Trojman , Andrei Vladimirescu
10th National Days on Energy Harvesting and Storage (JNRSE), Jun 2021, Grenoble, France
Communication dans un congrès hal-03345354v1
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Electrical Model and Performance of an Embedded MEMS Energy Harvester

Eduardo Holguin , Alexis Brenes , Lionel Trojman , Andrei Vladimirescu
International Conference on Analog VLSI Circuits (AVIC) 2021, Oct 2021, Bordeaux, France
Communication dans un congrès hal-03346368v1
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High-Speed and Low-Energy Dual-Mode Logic based Single-Clock-Cycle Binary Comparator

Ricardo Escobar , Luis Miguel Procel , Lionel Trojman , Marco Lanuzza , Ramiro Taco
IEEE LASCAS 2021, Feb 2021, Arequipe, Peru. pp.1-4, ⟨10.1109/LASCAS51355.2021.9459151⟩
Communication dans un congrès hal-03107004v1
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A 180 nm Low-Cost Operational Amplifier for IoT Applications

Kevin Vicuna , Cristhopher Mosquera , Mateo Rendon , Ariana Musello , Marco Lanuzza
2021 IEEE Fifth Ecuador Technical Chapters Meeting (ETCM), Oct 2021, Cuenca, Ecuador. pp.1-6, ⟨10.1109/ETCM53643.2021.9590655⟩
Communication dans un congrès hal-03575586v1
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RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

Lionel Trojman , David Rivadeneira , Marco Villegas , Eliana Acurio , Marco Lanuzza
IEEE LASCAS 2021, Feb 2021, Arequipe (virtual), Peru. pp.1-4, ⟨10.1109/LASCAS51355.2021.9459129⟩
Communication dans un congrès hal-03107008v1
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Fabrication of Nanopores Using the Controlled Dielectric Breakdown Technique

Nagel Amaguayo , Ariana Musello , Pablo Lopez , Lionel Trojman , Luis Miguel Prócel
2021 IEEE Latin America Electron Devices Conference (LAEDC), Apr 2021, Mexico, France. ⟨10.1109/LAEDC51812.2021.9437914⟩
Communication dans un congrès hal-03238942v1

Optimization of Active Voltage Rectifier / Doubler Designed in 90 nm Technology

David Rivadeneira , Marco Villegas , Luis Miguel Procel , Lionel Trojman
2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, Costa Rica. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069013⟩
Communication dans un congrès hal-02951685v1

Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications

Esteban Garzon , Benjamin Zambrano , Tatiana Moposita , Ramiro Taco , Luis-Miguel Procel
2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2020, San Jose, Costa Rica. pp.1-4, ⟨10.1109/LASCAS45839.2020.9069027⟩
Communication dans un congrès hal-02951687v1

Effects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations

Lionel Trojman , Juan Orozco , Mateo Bonilla , Mateo Valencia , Luis-Miguel Procel
IEEE ANDESCON 2020, 2020, Guayaquil, Ecuador
Communication dans un congrès hal-02955295v1

720p-HD Grayscale and Color Images Shape Recognition System Implementation on a FPGA Platform with a 1080pFull-HD HDMI Interface using a Hu Moments Algorithm

Andre Borja , Lionel Trojman , Luis-Miguel Procel , Ramiro Taco
IEEE ANDESCON 2020, 2020, Guayaquil, Ecuador
Communication dans un congrès hal-02955281v1

TFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range

Romain Liautard , Lionel Trojman , Adriana Arevalo , Luis-Miguel Procel
2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014896⟩
Communication dans un congrès hal-02951697v1

Implementation and Comparison of a Fast Shape Recognition Algorithm using Different FPGA Platforms

Andre Borja , Guillaume Varengues , Luis-Miguel Procel , Lionel Trojman , German Arevalo
2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014902⟩
Communication dans un congrès hal-02951692v1

Binarization Methodology Applied to Digital Images of Petroglyphs from Cueva del Diablo of Manabí

Luis-Miguel Procel , Michelle Aviles , Lionel Trojman , Florencio Delgado , Josefina Vasquez
2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-5, ⟨10.1109/ETCM48019.2019.9014866⟩
Communication dans un congrès hal-02951695v1

Resistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters

Silvana Guitarra , Lionel Trojman , Laurent Raymond
2019 Latin American Electron Devices Conference (LAEDC), Feb 2019, Armenia, Colombia. pp.1-4, ⟨10.1109/LAED.2019.8714728⟩
Communication dans un congrès hal-02951702v1

Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters

L.-M. Procel , J. Paredes , Lionel Trojman
2019 Latin American Electron Devices Conference (LAEDC), Feb 2019, Armenia, Colombia. pp.1-4, ⟨10.1109/LAED.2019.8714738⟩
Communication dans un congrès hal-02951704v1

Optical Feedback Interferometry imaging sensor for micrometric flow-patterns using continuous scanning

D. Flores , A. Quotb , C. Tronche , F. Jayat , Lionel Trojman
2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956790⟩
Communication dans un congrès hal-02951698v1

Microprocessor Design with a Direct Bluetooth Connection in 45 nm Technology Using Microwind

Esteban Garzon , Felix Chavez , Diego Jaramillo , Luis Sanchez , Sofia Lara
2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS), Feb 2019, Armenia, Colombia. pp.105-108, ⟨10.1109/LASCAS.2019.8667540⟩
Communication dans un congrès hal-02951706v1

Power and Area Reduction of MD5 based on Cryptoprocessor Using novel approach of Internal Counters on the Finite State Machine

Juan-José Jiménez , Lionel Trojman , Luis-Miguel Procel
2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), Nov 2019, Guayaquil, Ecuador. pp.1-4, ⟨10.1109/ETCM48019.2019.9014878⟩
Communication dans un congrès hal-02951693v1

Exploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs

Esteban Garzon , Raffaele de Rose , Felice Crupi , Lionel Trojman , Giovanni Finocchio
2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), Jul 2019, Lausanne, Switzerland. pp.85-88, ⟨10.1109/SMACD.2019.8795223⟩
Communication dans un congrès hal-02953651v1

New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies Luis-Miguel Procel Instituto de Micro/Nanoelectrónica

Adriana Arevalo , Romain Liautard , Daniel Romero , Lionel Trojman , Luis-Miguel Procel
SBCCI, Aug 2019, Sao Paolo, Brazil. pp.85-88, ⟨10.1145/3338852.3339871⟩
Communication dans un congrès hal-02951701v1

Model for resistive switching in bipolar Hafnium-based memories

Silvana Guitarra , Laurent Raymond , Lionel Trojman
WOMEN IN PHYSICS: 6th IUPAP International Conference on Women in Physics, 2019, Birmingham, United Kingdom. pp.060005, ⟨10.1063/1.5110123⟩
Communication dans un congrès hal-02953546v1

A phenomenological model of the resistive switching for Hf-based ReRAM devices

Silvana Guitarra , Lionel Trojman , Laurent Raymond
2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM.2018.8580284⟩
Communication dans un congrès hal-02951710v1

On the parameter extraction of short channel UTBB-FDSOI FET’s with high-κ metal gate and TCAD modelling

Lionel Trojman , Andres Vaca , Luis Miguel Procel
2018 IEEE XXV International Conference on Electronics, Electrical Engineering and Computing (INTERCON), Aug 2018, Lima, Peru. pp.1-4, ⟨10.1109/INTERCON.2018.8526445⟩
Communication dans un congrès hal-02951713v1

Reliability in GaN-based devices for power applications

Eliana Acurio , Lionel Trojman , Felice Crupi , Ferdinando Iucolano , Nicolo Ronchi
2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, France. pp.1-6, ⟨10.1109/ETCM.2018.8580263⟩
Communication dans un congrès hal-02951709v1

Capacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique

Diego Benalcazar , Esteban Garzon , Lionel Trojman
2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM), Oct 2018, Cuenca, Ecuador. pp.1-5, ⟨10.1109/ETCM.2018.8580289⟩
Communication dans un congrès hal-02951708v1

Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process

Lionel Trojman , Diego Benalcazar , Luis Procel , Guillaume Jobard
2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC), Nov 2017, Ixtapa, Mexico. pp.1-6, ⟨10.1109/ROPEC.2017.8261677⟩
Communication dans un congrès hal-02952130v1

Implementation and optimization of the algorithm of automatic color enhancement in digital images

Juan Sebastian Romero , Luis Miguel Procel , Lionel Trojman , Damien Verdier
2017 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC), Nov 2017, Ixtapa, Mexico. pp.1-6, ⟨10.1109/ROPEC.2017.8261651⟩
Communication dans un congrès hal-02952122v1

Remote control of VNA and parameter analyzer for RFCV measurements using Python

Esteban Garzon , Fernando M. Sanchez , Luis-Miguel Procel , Lionel Trojman
2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-4, ⟨10.1109/ANDESCON.2016.7836225⟩
Communication dans un congrès hal-02952164v1

Temperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective

L.M. Procel , Lionel Trojman , F. Crupi
2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-4, ⟨10.1109/ANDESCON.2016.7836241⟩
Communication dans un congrès hal-02952166v1

Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

J. J. Franco , B. Kaczer , S. Mukhopadhyay , P. Duhan , P. Weckx
2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.15.3.1-15.3.4, ⟨10.1109/IEDM.2016.7838422⟩
Communication dans un congrès hal-02952143v1

Statistical study of SiON short MOSFET under Channel Hot Carrier stress

Lionel Trojman , Juan Acosta , Mario Ortega , Luis-Miguel Procel
2016 IEEE ANDESCON, Oct 2016, Arequipa, Peru. pp.1-5, ⟨10.1109/ANDESCON.2016.7836238⟩
Communication dans un congrès hal-02952151v1

Origins and implications of increased channel hot carrier variability in nFinFETs

B. Kaczer , J. J. Franco , M. Cho , T. Grasser , Ph. Roussel
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.3B.5.1-3B.5.6, ⟨10.1109/IRPS.2015.7112706⟩
Communication dans un congrès hal-02952187v1

On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

L.-A. Ragnarsson , J. Mitard , T. Kauerauf , A. de Keersgieter , T. Schram
2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2011, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2011.5872255⟩
Communication dans un congrès hal-02953487v1

Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

L. Pantisano , Lionel Trojman , J. Mitard , B. Dejaeger , S. Severi
2008 Symposium on VLSI Technology, Jun 2008, Honolulu, United States. pp.52-53, ⟨10.1109/VLSIT.2008.4588560⟩
Communication dans un congrès hal-02952216v1

Advanced electrical characterization toward (sub) 1nm EOT HfSiON ¿ hole trapping in PFET and L-dependent effects

M.B. Zahid , L. Pantisano , R. Degraeve , M. Aoulaiche , Lionel Trojman
2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.32-33, ⟨10.1109/VLSIT.2007.4339715⟩
Communication dans un congrès hal-02952244v1

Line width dependent mobility in high-k a comparative performance study between FUSI and TiN

L. Pantisano , Lionel Trojman , S. Severi , E.San Andres , C. Kerner
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Apr 2007, Hsinchu, Japan. pp.1-2, ⟨10.1109/VTSA.2007.378909⟩
Communication dans un congrès hal-02952258v1

Novel, Effective and Cost-Efficient Method of Introducing Fluorine into Metal/Hf-based Gate Stack in MuGFET and Planar SOI Devices with Significant BTI Improvement

A. Shickova , N. Collaert , P. Zimmerman , M. Demand , E. Simoen
2007 IEEE Symposium on VLSI Technology, Jun 2007, Kyoto, Japan. pp.112-113, ⟨10.1109/VLSIT.2007.4339748⟩
Communication dans un congrès hal-02952222v1

Cross-wafer controlled interface layer thickness variation, and its application to SiO 2 / high-κ stack characterisation

B.J. O'Sullivan , V.S. Kaushik , L.-A. Ragnarsson , Lionel Trojman , B Onsia
ESSDERC 2006. Proceedings of the 36th European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.395-398, ⟨10.1109/ESSDER.2006.307721⟩
Communication dans un congrès hal-02952300v1

High performing 8 /spl Orang/ EOT HfO/sub 2/ / tan low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions

Lionel Trojman , Lars-Åke Ragnarsson , Simone Severi , K.D. Johnson , David Brunco
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 2005, Kyoto, Japan. pp.234-235, ⟨10.1109/.2005.1469281⟩
Communication dans un congrès hal-02952626v1