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ambroise schellmanns

10
Documents
Identifiants chercheurs

Présentation

to be continued

Publications

nathalie-batut

An Innovative Solar Production Simulator to Better Teach the Foundations of Photovoltaic Energy to Students

Sébastien Jacques , Zheng Ren , Sébastien Bissey , Ambroise Schellmanns , Nathalie Batut
WSEAS Transactions on advances in Engineering Education, 2014, 11, pp.11-20
Article dans une revue hal-01810893v1

Development and Static Mode Characterization of a New Low-Loss AC Switch Based on Super-Gain BJT

Zheng Ren , Sébastien Jacques , Yubing Song , Adelphe Caldeira , Guillaume Goubard
Journal of Energy and Power Engineering, 2014, 8 (2), pp.357-364. ⟨10.17265/1934-8975/2014.02.020⟩
Article dans une revue hal-01833053v1

New Multilevel Mixed Topology Development to Improve Inverter Robustness for Domestic Photovoltaic Installations

Sébastien Jacques , Adelphe Caldeira , Ambroise Schellmanns , Zheng Ren , Nathalie Batut
Journal of Power and Energy Engineering, 2013, 01 (05), pp.1-6. ⟨10.4236/jpee.2013.15001⟩
Article dans une revue hal-01810898v1

A Review on Selected Patents about Trends Regarding Silicon Monolithic Power AC Switches

Luong Viet Phung , Nathalie Batut , Ambroise Schellmanns , Sébastien Jacques
Recent Patents on Electrical & Electronic Engineering, 2012, 5 (3), pp.222 - 230. ⟨10.2174/2213111611205030222⟩
Article dans une revue hal-01636532v1

Lifetime Prediction Modeling of Non-Insulated TO-220AB Packages with Lead-Based Solder Joints during Power Cycling

Sébastien Jacques , Adelphe Caldeira , Nathalie Batut , Ambroise Schellmanns , René Leroy
Microelectronics Reliability, 2012, 52 (1), pp.212-216. ⟨10.1016/j.microrel.2011.08.017⟩
Article dans une revue hal-01810917v1
Image document

Modeling of carrier lifetime based on Deep-Level Transient Spectroscopy for power PIN diodes

Imen Abdennabi , Nathalie Batut , Ambroise Schellmanns , Lionel Jaouen , Fabrice Roqueta
2022 IEEE International Conference on Electrical Sciences and Technologies in Maghreb (CISTEM), Oct 2022, Tunis, Tunisia. pp.1-6, ⟨10.1109/CISTEM55808.2022.10043947⟩
Communication dans un congrès hal-04010867v2

Simulated 1200V SiC-MOSFET short-circuit behavior

Guillaume Goubard , Zheng Ren , Nathalie Batut , Ambroise Schellmanns
icrepq2018, Mar 2018, Salamanca, Spain
Communication dans un congrès hal-01862351v1
Image document

Gummel-Poon modeling of a New Super-Gain BJT and an innovative 600V AC switch

Zheng Ren , Nathalie Batut , Ambroise Schellmanns
Symposium de Genie Electrique, Jun 2016, Grenoble, France
Communication dans un congrès hal-01361544v1

BJT static behavior improvement by modification of the epitaxial layer

Loïc Théolier , Luong Viet Phung , Nathalie Batut , Ambroise Schellmanns , Yves Raingeaud
27th International Conference on Microelectronics Proceedings (MIEL), 2010, May 2010, Nis, Serbia. pp.79-82
Communication dans un congrès hal-00991551v1
Image document

BJT application expansion by insertion of superjunction

Loïc Théolier , Chawki Benboujema , Ambroise Schellmanns , Nathalie Batut , Yves Raingeaud
22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, Jun 2010, Hiroshima, Japan. pp.157 - 160
Communication dans un congrès hal-00991541v1