Arouna DARGA
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Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALDphysica status solidi (a), 2019, 216 (10), pp.1800617. ⟨10.1002/pssa.201800617⟩
Article dans une revue
hal-01943257v1
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Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxyJournal of Applied Physics, 2018, SPECIAL TOPIC: DEFECTS IN SEMICONDUCTORS 123 (16), pp.161418 - 161418. ⟨10.1063/1.5011371⟩
Article dans une revue
hal-01739252v1
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Influence of PE-ALD of GaP on the Silicon Wafers Qualityphysica status solidi (a), 2017, ⟨10.1002/pssa.201700685⟩
Article dans une revue
hal-01629362v1
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Development and simulated environment testing of β-(Al)Ga2O3-based photodetectors for space-based observation of the Herzberg continuumSensors, Systems, and Next-Generation Satellites XXV. Proceedings SPIE 11858, Sep 2021, Online, Spain. pp.1185813, ⟨10.1117/12.2603565⟩
Communication dans un congrès
hal-03414495v1
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Interface properties of GaP/Si heterojunction fabricated by PE-ALDEMRS Spring Meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01801489v1
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Characterization of GaP/Si heterojunctions by space charge capacitance measurementsE-MRS 2017 Spring Meeting, May 2017, Strasbourg, France
Communication dans un congrès
hal-01632942v1
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Capacitance characterization of GaP/n-Si structures grown by PE-ALD4th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint-Petersburg OPEN 2017), Apr 2017, Saint-Petersbourg, France. pp.052027, ⟨10.1088/1742-6596/917/5/052027⟩
Communication dans un congrès
hal-01653684v1
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