Benjamin Damilano

Publications

Article dans une revue (114)

Effects of Substrate Miscut on Growth Instabilities in Homoepitaxially Grown GaN/AlGaN System Henryk Teisseyre,Stéphane Vézian,Piotr Wojnar,Robert Kucharski,Tomasz Sochackiet al. Crystal Growth & Design, 2026, 26 (6), pp.2396-2405. ⟨10.1021/acs.cgd.5c01733⟩ Article dans une revue hal-05582184v1
Wireless Surface Acoustic Wave Sensors at 2.45 GHz Based on AlN/Sapphire and Operable up to 600 °C Ulrich Youbi,Sami Hage-Ali,Florian Bartoli,Jaafar Ghanbaja,Eric Frayssinetet al. Sensors and Actuators A: Physical , 2026, 401, pp.117569. ⟨10.1016/j.sna.2026.117569⟩ Article dans une revue hal-05537947v1
GaN Mid‐IR Plasmonics: Low‐Loss Epsilon‐Near‐Zero Modes Julia Inglés‐cerrillo,Maria Villanueva‐blanco,Benjamin Damilano,Stéphane Vézian,Miguel Montes Bajoet al. Advanced Optical Materials, 2026, 14 (16), pp.e03829. ⟨10.1002/adom.202503829⟩ Article dans une revue hal-05582187v1
Polarity inversions within AlN films on sapphire exploiting silicon and oxygen diffusion during high temperature annealing Valeria Bonito Oliva,Sylvia Hagedorn,Eric Robin,Holm Kirmse,Jean-Luc Rouviereet al. Crystal Growth & Design, 2025, 25 (15), pp.5697-5708. ⟨10.1021/acs.cgd.4c01641⟩ Article dans une revue hal-05227803v1
Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission M. Sall,G. Sow,A. Baillard,A. Dujarrier,L. Goodwinet al. Nano Trends, 2025, 9, pp.100078. ⟨10.1016/j.nwnano.2025.100078⟩ Article dans une revue hal-04922995v1
Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: A study of material, interface and device properties M. Sun,R.G. Cornejo,M. de la Mata,S.I. Molina,Benjamin Damilanoet al. Surfaces and Interfaces, 2025, 72, pp.107278. ⟨10.1016/j.surfin.2025.107278⟩ Article dans une revue hal-05227790v1
Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids Amélie Dussaigne,Colin Paillet,Névine Rochat,David Cooper,Adeline Grenieret al. Communications Materials, 2024, 5 (1), pp.280. ⟨10.1038/s43246-024-00725-8⟩ Article dans une revue hal-05219604v1
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion B. Damilano,R. Aristégui,H. Teisseyre,S. Vézian,V. Guigozet al. Journal of Applied Physics, 2024, 135 (9), ⟨10.1063/5.0182659⟩ Article dans une revue hal-04489504v1
Perspectives for III-Nitride photonic platforms Philippe Boucaud,Nagesh Bhat,Maksym Gromovyi,Moustafa El Kurdi,Antoine Reserbat-Planteyet al. Nano Futures, 2024, 8 (2), pp.022001. ⟨10.1088/2399-1984/ad41aa⟩ Article dans une revue (article de synthèse) hal-04560375v1
Vector Beam Generation from Standing Hollow GaN Nanowire Lasers on Sapphire Substrates Masato Takiguchi,Sylvain Sergent,Benjamin Damilano,Stéphane Vézian,Sébastien Chenotet al. ACS photonics, 2024, 11 (2), pp.789-794. ⟨10.1021/acsphotonics.3c01735⟩ Article dans une revue hal-04489537v1
Investigation of AlGaN UV emitting tunnel junction LED devices by off-axis electron holography David Cooper,Victor Fan Arcara,Benjamin Damilano,Jean-Yves Duboz Nanotechnology, 2024, 35 (43), pp.435206. ⟨10.1088/1361-6528/ad690a⟩ Article dans une revue hal-04726776v1
GaN/AlN bilayers for integrated photonics Nagesh Bhat,Maksym Gromovyi,Moustafa El Kurdi,Xavier Checoury,Benjamin Damilanoet al. Optical Materials Express, 2024, 14 (3), pp.792. ⟨10.1364/ome.515887⟩ Article dans une revue hal-04484997v1
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si$_x$N$_y$ B Damilano,S. Vézian,J. Brault,P Ruterana,B. Gilet al. Nanotechnology, 2023, 34 (24), pp.245602. ⟨10.1088/1361-6528/acc3a2⟩ Article dans une revue hal-04248760v1
Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions M. Gromovyi,N. Bhat,H. Tronche,P. Baldi,M. El Kurdiet al. Optics Express, 2023, 31 (19), pp.31397-31409. ⟨10.1364/OE.501221⟩ Article dans une revue hal-04211196v1
Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process Leszek Konczewicz,Sandrine Juillaguet,Marcin Zajac,Elzbieta Litwin-Staszewska,Mohamed Al Khalfiouiet al. Physica Status Solidi A (applications and materials science), 2023, Nitride Semiconductors, 220 (16), pp.2200769. ⟨10.1002/pssa.202200769⟩ Article dans une revue hal-04248758v1
Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films R. Aristegui,P. Lefebvre,C. Brimont,T. Guillet,M. Vladimirovaet al. Physical Review B, 2023, 108 (12), pp.125421. ⟨10.1103/PhysRevB.108.125421⟩ Article dans une revue hal-04251300v1
Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks Hui Zi,Yuk Fai Cheung,Benjamin Damilano,Eric Frayssinet,Blandine Alloinget al. Optics Letters, 2022, 47 (6), pp.1521-1524. ⟨10.1364/ol.449482⟩ Article dans une revue hal-04285358v1
Porous Nitride Light-Emitting Diodes Nuño Amador-Mendez,Tiphaine Mathieu-Pennober,Stéphane Vézian,Marie-Pierre Chauvat,Magali Moraleset al. ACS photonics, 2022, 9 (4), pp.1256-1263. ⟨10.1021/acsphotonics.1c01729⟩ Article dans une revue hal-03864353v1
Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells R. Aristegui,F. Chiaruttini,B. Jouault,P. Lefebvre,C. Brimontet al. Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩ Article dans une revue hal-03759667v1
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Benjamin Damilanoet al. Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩ Article dans une revue hal-03467546v1
Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks Hui Zi,Yuk Fai Cheung,Benjamin Damilano,Eric Frayssinet,Blandine Alloinget al. Optics Letters, 2022, 47 (6), pp.1521. ⟨10.1364/OL.449482⟩ Article dans une revue hal-03681897v1
Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes Jean-Yves Duboz,Victor Fan Arcara,Cynthia Kessaci,Stéphane Vézian,Benjamin Damilano Physica Status Solidi A (applications and materials science), 2022, 219 (7), pp.2200055. ⟨10.1002/pssa.202200055⟩ Article dans une revue hal-03828269v1
On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations Philippe Vennéguès,Ludovic Largeau,Virginie Brändli,Benjamin Damilano,Karine Tavernieret al. Journal of Applied Physics, 2022, 132 (16), pp.165102. ⟨10.1063/5.0111558⟩ Article dans une revue hal-03966716v1
Les nouvelles diodes électroluminescentes pour l’émission UV Julien Brault,Benjamin Damilano,Jean-Yves Duboz,Bernard Gil Reflets de la Physique, 2022, 71, pp.16-21. ⟨10.1051/refdp/202271016⟩ Article dans une revue hal-03784792v1
Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence Benjamin Damilano,Stéphane Vézian,Marie-Pierre Chauvat,Pierre Ruterana,Nuño Amador-Méndezet al. Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩ Article dans une revue hal-03865257v1
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Maud Nemozet al. Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩ Article dans une revue hal-03741626v1
Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces Qinghua Song,Arthur Baroni,Pin Chieh Wu,Sébastien Chenot,Virginie Brandliet al. Nature Communications, 2021, 12, pp.3631. ⟨10.1038/s41467-021-23908-0⟩ Article dans une revue hal-03111022v2
Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires Kelly W Mauser,Magdalena Solà-Garcia,Matthias Liebtrau,Benjamin Damilano,Pierre-Marie Coulonet al. ACS Nano, 2021, 15 (7), pp.11385-11395. ⟨10.1021/acsnano.1c00850⟩ Article dans une revue hal-03418883v1
Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization D. Cooper,V. Fan Arcara,B. Damilano,L. Amichi,A. Mavelet al. Journal of Applied Physics, 2021, 130 (2), pp.025704. ⟨10.1063/5.0054810⟩ Article dans une revue hal-03418879v1
Whispering-gallery mode InGaN microdisks on GaN substrates H Zi,W y Fu,F Tabataba-Vakili,H Kim-Chauveau,E Frayssinetet al. Optics Express, 2021, 29, ⟨10.1364/oe.427727⟩ Article dans une revue hal-03436102v1
Bandwidth Unlimited Polarization-Maintaining Metasurfaces Q. Song,S. Khadir,S. Vézian,B. Damilano,P. D Mierryet al. Science Advances , 2021, 7 (5), ⟨10.1126/sciadv.abe1112⟩ Article dans une revue hal-03582572v1
Bandwidth-unlimited polarization-maintaining metasurfaces Q Song,S Khadir,S Vézian,B Damilano,P D Mierryet al. Science Advances , 2021 Article dans une revue hal-03436097v1
Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Benjamin Damilanoet al. Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩ Article dans une revue hal-03035072v1
Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures François Chiaruttini,Thierry Guillet,Christelle Brimont,Denis Scalbert,Steeve Cronenbergeret al. Physical Review B, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩ Article dans une revue hal-03014825v2
Lasing up to 380 K in a sublimated GaN nanowire S. Sergent,B. Damilano,S. Vézian,S. Chenot,T. Tsuchizawaet al. Applied Physics Letters, 2020, 116 (22), pp.223101. ⟨10.1063/5.0004771⟩ Article dans une revue hal-03024869v1
Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters Thi Huong Ngo,Rémi Comyn,Eric Frayssinet,Hyonju Chauveau,Sébastien Chenotet al. Journal of Crystal Growth, 2020, 552, pp.125911. ⟨10.1016/j.jcrysgro.2020.125911⟩ Article dans une revue hal-03418915v1
Full InGaN red light emitting diodes A. Dussaigne,F. Barbier,B. Damilano,S. Chenot,A. Grenieret al. Journal of Applied Physics, 2020, 128 (13), pp.135704. ⟨10.1063/5.0016217⟩ Article dans une revue hal-03418848v1
Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate Benjamin Damilano,Marc Portail,Eric Frayssinet,Virginie Brändli,Florian Faureet al. Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-76031-3⟩ Article dans une revue hal-03418823v1
Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform Farsane Tabataba-Vakili,Blandine Alloing,Benjamin Damilano,Hassen Souissi,Christelle Brimontet al. Optics Letters, 2020, 45 (15), pp.4276-4279. ⟨10.1364/OL.395371⟩ Article dans une revue hal-02908380v1
InGaN islands and thin films grown on epitaxial graphene C Paillet,S. Vézian,C. Matei,A. Michon,B. Damilanoet al. Nanotechnology, 2020, 31 (40), pp.405601. ⟨10.1088/1361-6528/ab98bd⟩ Article dans une revue hal-03024853v1
Printing polarization and phase at the optical diffraction limit: near and far-field optical encryption Qinghua Song,Samira Khadir,Stéphane Vézian,Benjamin Damilano,Philippe de Mierryet al. Nanophotonics, 2020, 10 (1), pp.697-704. ⟨10.1515/nanoph-2020-0352⟩ Article dans une revue hal-03582590v1
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction. E Di Russo,A Mavel,V Fan Arcara,B Damilano,Ioanna Dimkouet al. Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩ Article dans une revue hal-03411352v1
Analysis of low-threshold optically pumped III-nitride microdisk lasers Farsane Tabataba-Vakili,Christelle Brimont,Blandine Alloing,Benjamin Damilano,Laetitia Doyennetteet al. Applied Physics Letters, 2020, 117, pp.121103. ⟨10.1063/5.0015252⟩ Article dans une revue hal-02946015v1
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction E. Di Russo,A. Mavel,V Fan Arcara,B. Damilano,Ioanna Dimkouet al. Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩ Article dans une revue hal-03024837v1
Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays Pierre-Marie Coulon,Peng Feng,Benjamin Damilano,Stephane Vezian,Tao Wanget al. Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-62539-1⟩ Article dans une revue hal-03024881v1
High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials L. Konczewicz,S. Juillaguet,E. Litwin-Staszewska,R. Piotrzkowski,H. Peyreet al. Journal of Applied Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩ Article dans une revue hal-02931592v1
Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters Guido Schifani,Thomas Frisch,Julien Brault,Philippe Vennegues,Samuel Mattaet al. ACS Applied Nano Materials, 2020, 3 (5), pp.4054-4060. ⟨10.1021/acsanm.9b02546⟩ Article dans une revue hal-02883981v1
Revealing topological phase in Pancharatnam-Berry metasurfaces using mesoscopic electrodynamics Zhanjie Gao,Sandeep Golla,Rajath Sawant,Vladimir Osipov,Gauthier Briereet al. Nanophotonics, 2020, 9 (16), pp.4711-4718. ⟨10.1515/nanoph-2020-0365⟩ Article dans une revue hal-03582593v1
Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission Pierre Ruterana,Magali Morales,Nicolas Chery,Thi Huong Ngo,Marie-Pierre Chauvatet al. Journal of Applied Physics, 2020, 128, pp.223102. ⟨10.1063/5.0027119⟩ Article dans une revue hal-03047502v1
Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces Qinghua Song,Arthur Baroni,Rajath Sawant,Peinan Ni,Virginie Brandliet al. Nature Communications, 2020, 11, pp.2651. ⟨10.1038/s41467-020-16437-9⟩ Article dans une revue hal-02635286v1
Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges Julien Brault,Samuel Matta,Thi Huong Ngo,Mohamed Al Khalfioui,Pierre Valvinet al. Journal of Applied Physics, 2019, 126 (20), pp.205701. ⟨10.1063/1.5115593⟩ Article dans une revue hal-02380035v1
Subliming GaN into Ordered Nanowire Arrays for Ultraviolet and Visible Nanophotonics Sylvain Sergent,Benjamin Damilano,Stephane Vezian,Sébastien Chenot,Masato Takiguchiet al. ACS photonics, 2019, 6 (12), pp.3321-3330. ⟨10.1021/acsphotonics.9b01435⟩ Article dans une revue hal-03024899v1
(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition V. Fan Arcara,B. Damilano,G. Feuillet,A. Courville,S. Chenotet al. AIP Advances, 2019, 9 (5), pp.055101. ⟨10.1063/1.5092693⟩ Article dans une revue hal-02304933v1
III-nitride on silicon electrically injected microrings for nanophotonic circuits Farsane Tabataba-Vakili,Stéphanie Rennesson,Benjamin Damilano,Eric Frayssinet,Jean-Yves Dubozet al. Optics Express, 2019, 27 (8), pp.11800-11808. ⟨10.1364/OE.27.011800⟩ Article dans une revue hal-02100722v1
Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon Farsane Tabataba-Vakili,Laetitia Doyennette,Christelle Brimont,Thierry Guillet,Stephanie Rennessonet al. Scientific Reports, 2019, 9, pp.18095. ⟨10.1038/s41598-019-54416-3⟩ Article dans une revue hal-02393815v1
Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures François Chiaruttini,Thierry Guillet,Christelle Brimont,Benoit Jouault,Pierre Lefebvreet al. Nano Letters, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩ Article dans une revue hal-02272702v1
Metasurface orbital angular momentum holography Haoran Ren,Gauthier Briere,Xinyuan Fang,Peinan Ni,Rajath Sawantet al. Nature Communications, 2019, 10, ⟨10.1038/s41467-019-11030-1⟩ Article dans une revue hal-02304950v1
Ge doped GaN and Al 0.5 Ga 0.5 N-based tunnel junctions on top of visible and UV light emitting diodes V. Fan Arcara,B. Damilano,G. Feuillet,S. Vezian,K. Ayadiet al. Journal of Applied Physics, 2019, 126 (22), pp.224503. ⟨10.1063/1.5121379⟩ Article dans une revue hal-02569339v1
Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation Benjamin Damilano,Pierre-Marie Coulon,Stephane Vézian,Virginie Brandli,Jean-Yves Dubozet al. Applied Physics Express, 2019, 12 (4), pp.045007. ⟨10.7567/1882-0786/ab0d32⟩ Article dans une revue hal-02304928v1
An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces Gauthier Brière,Peinan Ni,Sébastien Héron,Sebastien Chenot,Stephane Vézianet al. Advanced Optical Materials, 2019, 7 (14), pp.1801271. ⟨10.1002/adom.201801271⟩ Article dans une revue hal-02118940v1
Displacement Talbot Lithography for nano-engineering of III-nitride materials Pierre-Marie Coulon,Benjamin Damilano,Blandine Alloing,Pierre Chausse,Sebastian Waldeet al. Microsystems & Nanoengineering, 2019, 5 (1), ⟨10.1038/s41378-019-0101-2⟩ Article dans une revue hal-03024884v1
Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density Roy Dagher,Philippe de Mierry,Blandine Alloing,Virginie Brandli,Marc Portailet al. Journal of Crystal Growth, 2019, 526, pp.125235. ⟨10.1016/j.jcrysgro.2019.125235⟩ Article dans une revue hal-02304951v1
Enhanced excitonic emission efficiency in porous GaN Thi Huong Ngo,Bernard Gil,T. Shubina,B. Damilano,Stephane Vezianet al. Scientific Reports, 2018, 8, pp.15767. ⟨10.1038/s41598-018-34185-1⟩ Article dans une revue hal-01905654v1
The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells Nicolas Chery,Thi Huong Ngo,M.P. Chauvat,B. Damilano,A Courvilleet al. Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩ Article dans une revue hal-01691523v1
Internal quantum efficiency in polar and semipolar (11e22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red Thi Huong Ngo,Nicolas Chery,Pierre Valvin,A Courville,Philippe de Mieryet al. Superlattices and Microstructures, 2018, 113, pp.129. ⟨10.1016/j.spmi.2017.10.030⟩ Article dans une revue hal-01700051v1
Mesoporous GaN Made by Selective Area Sublimation for Efficient Light Emission on Si Substrate Benjamin Damilano,Stéphane Vézian,Jean Massies physica status solidi (b), 2018, 255 (5), pp.1700392. ⟨10.1002/pssb.201700392⟩ Article dans une revue hal-03553871v1
Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape B. Damilano,Marie Lesecq,Di Zhou,Éric Frayssinet,Sebastien Chenotet al. IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩ Article dans une revue hal-02304909v1
Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001) Samuel Matta,Julien Brault,Thi Huong Ngo,B. Damilano,Mathieu Lerouxet al. Superlattices and Microstructures, 2018, 114, pp.161. ⟨10.1016/j.spmi.2017.12.029⟩ Article dans une revue hal-01700054v1
Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate Tasnia Hossain,Mohammad Junaebur Rashid,Eric Frayssinet,Nicolas Baron,Benjamin Damilanoet al. physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩ Article dans une revue hal-01871066v1
UVA and UVB light emitting diodes with AlyGa1-yN quantum dot active regions covering the 305-335 nm range Julien Brault,M. Al Khalfioui,Samuel Matta,B. Damilano,Mathieu Lerouxet al. Semiconductor Science and Technology, 2018, 33 (7), pp.075007. ⟨10.1088/1361-6641/aac3bf⟩ Article dans une revue hal-01863551v1
Blue Microlasers Integrated on a Photonic Platform on Silicon Farsane Tabataba-Vakili,Laetitia Doyennette,Christelle Brimont,Thierry Guillet,Stephanie Rennessonet al. ACS photonics, 2018, 5 (9), pp.3643. ⟨10.1021/acsphotonics.8b00542⟩ Article dans une revue hal-01951027v1
Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission Samuel Matta,Julien Brault,Thi Huong Ngo,B. Damilano,Maxim Korytovet al. Journal of Applied Physics, 2017, 122, pp.085706. ⟨10.1063/1.5000238⟩ Article dans une revue hal-01579358v1
Recent improvements of flexible GaN-based HEMT technology Sarra Mhedhbi,Marie Lesecq,Philippe Altuntas,N. Defrance,Yvon Cordieret al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), 1600484, 5 p. ⟨10.1002/pssa.201600484⟩ Article dans une revue hal-03270098v1
Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures Thi Huong Ngo,Bernard Gil,Benjamin Damilano,Pierre Valvin,A Courvilleet al. Journal of Applied Physics, 2017, 122, pp.063103. ⟨10.1063/1.4997608⟩ Article dans une revue hal-01573934v1
Internal quantum efficiency and Auger recombination in green, yellow and red InGaN-based light emitters grown along the polar direction Thi Huong Ngo,Bernard Gil,B. Damilano,K. Lekhal,P. de Mierry Superlattices and Microstructures, 2017, 103, pp.245. ⟨10.1016/j.spmi.2017.01.026⟩ Article dans une revue hal-01490590v1
Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation B. Damilano,S. Vézian,J. Massies Optics Express, 2017, 25 (26), pp.33243. ⟨10.1364/oe.25.033243⟩ Article dans une revue hal-03553879v1
III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet Julien Selles,V. Crepel,I. Roland,M. El Kurdi,X. Checouryet al. Applied Physics Letters, 2016, 109 (23), pp.231101. ⟨10.1063/1.4971357⟩ Article dans une revue hal-01469387v1
High temperature electrical transport study of Si-doped AlN Sylvie Contreras,Leszek Konczewicz,Jaweb Ben Messaoud,Herve Peyre,Mohamed Al Khalfiouiet al. Superlattices and Microstructures, 2016, 98, pp.253-258. ⟨10.1016/j.spmi.2016.08.038⟩ Article dans une revue hal-01425146v1
Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication Benjamin Damilano,S. Vézian,J. Brault,B. Alloing,J. Massies Nano Letters, 2016, 16 (3), pp.1863-1868. ⟨10.1021/acs.nanolett.5b04949⟩ Article dans une revue hal-05223993v1
Investigation of Al y Ga1− y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters Julien Brault,Samuel Matta,Thi Huong Ngo,Maxim Korytov,Daniel Rosaleset al. Japanese Journal of Applied Physics, 2016, 55, pp.05FG06. ⟨10.7567/JJAP.55.05FG06⟩ Article dans une revue hal-01382466v1
Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells Thi Huong Ngo,Bernard Gil,Pierre Valvin,Benjamin Damilano,K. Lekhalet al. Japanese Journal of Applied Physics, 2016, 55, pp.05FG10. ⟨10.7567/JJAP.55.05FG10⟩ Article dans une revue hal-01382420v1
Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes Gema Tabares Jimenez,Sarra Mhedhbi,Marie Lesecq,Benjamin Damilano,Julien Braultet al. IEEE Photonics Technology Letters, 2016, 28 (15), pp.1661-1664. ⟨10.1109/LPT.2016.2563258⟩ Article dans une revue hal-03270097v1
First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor Sarra Mhedhbi,Marie Lesecq,Philippe Altuntas,N. Defrance,Etienne Okadaet al. IEEE Electron Device Letters, 2016, 37 (5), pp.553-555. ⟨10.1109/LED.2016.2542921⟩ Article dans une revue hal-03270110v1
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Yvon Cordier,Benjamin Damilano,Phannara Aing,Catherine Chaix,Florence Linezet al. Journal of Crystal Growth, 2016, 433, pp.165-171. ⟨10.1016/j.jcrysgro.2015.10.017⟩ Article dans une revue istex hal-05311091v1
Ultraviolet light emitting diodes using III-N quantum dots Julien Brault,Samuel Matta,Thi Huong Ngo,Daniel Rosales,Mathieu Lerouxet al. Materials Science in Semiconductor Processing, 2016, 55, pp.95. ⟨10.1016/j.mssp.2016.02.014⟩ Article dans une revue istex hal-01390773v1
Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures Thi Huong Ngo,Bernard Gil,Pierre Valvin,B. Damilano,Kaddour Lekhalet al. Applied Physics Letters, 2015, 107, pp.122103. ⟨10.1063/1.4931624⟩ Article dans une revue hal-01203313v1
Growth of nitride-based light emitting diodes with a high-reflectivity distributed Bragg reflector on mesa-patterned silicon substrate Benjamin Damilano,Stéphane Brochen,Julien Brault,Tasnia Hossain,François Réveretet al. Physica Status Solidi A (applications and materials science), 2015, 212 (10), pp.2297-2301. ⟨10.1002/pssa.201532303⟩ Article dans une revue hal-05477573v1
Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy Daniel Rosales,Bernard Gil,Thierry Bretagnon,Julien Brault,Philippe Vennegueset al. Journal of Applied Physics, 2015, 118 (2), pp.024303. ⟨10.1063/1.4923306⟩ Article dans une revue hal-01238733v1
Yellow–red emission from (Ga,In)N heterostructures Benjamin Damilano,Bernard Gil Journal of Physics D: Applied Physics, 2015, 48, pp.403001. ⟨10.1088/0022-3727/48/40/403001⟩ Article dans une revue hal-01206060v1
Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission K. Lekhal,B. Damilano,H. T. Ngo,Daniel Rosales,P. de Mierryet al. Applied Physics Letters, 2015, 106 (14), pp.142101. ⟨10.1063/1.4917222⟩ Article dans une revue hal-01238729v1
The universal photoluminescence behaviour of yellow light emitting (Ga,In)N/GaN heterostructures Daniel Rosales,Thi Huong Ngo,Pierre Valvin,K Lekhal,B. Damilanoet al. Superlattices and Microstructures, 2014, 76, pp.9. ⟨10.1016/j.spmi.2014.09.017⟩ Article dans une revue istex hal-01101061v1
Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters Julien Brault,Daniel Rosales,B. Damilano,Mathieu Leroux,A Courvilleet al. Semiconductor Science and Technology, 2014, 29, pp.084001. ⟨10.1088/0268-1242/29/8/084001⟩ Article dans une revue hal-01025116v1
Excitons in nitride heterostructures: From zero- to one-dimensional behavior Daniel Rosales,Thierry Bretagnon,Bernard Gil,A Kahouli,Julien Braultet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, Physical Review B, 88, pp.125437. ⟨10.1103/PhysRevB.88.125437⟩ Article dans une revue hal-01905195v1
Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate T. Hossain,J. Wang,E. Frayssinet,S. Chenot,M. Lerouxet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2013, 10 (3), pp.425 - 428. ⟨10.1002/pssc.201200556⟩ Article dans une revue istex hal-01871861v1
Role of magnetic polarons in ferromagnetic GdN F. Natali,B.J. Ruch,H. J. Trodahl,Do Le Binh,S. Vézianet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (3), pp.035202. ⟨10.1103/PhysRevB.87.035202⟩ Article dans une revue hal-01002353v1
Blue-green and white color tuning of monolithic light emitting diodes Benjamin Damilano,Pierre Demolon,J. Brault,Thomas Huault,Franck Nataliet al. Journal of Applied Physics, 2010, 108 (7), pp.073115. ⟨10.1063/1.3490895⟩ Article dans une revue hal-05223848v1
Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission Benjamin Damilano,Thomas Huault,Julien Brault,Denis Lefebvre,Jean Massies Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7 (7-8), pp.2130-2132. ⟨10.1002/pssc.200983426⟩ Article dans une revue istex hal-05311116v1
GaN/Al 0.5 Ga 0.5 N quantum dots and quantum dashes Thomas Huault,Julien Brault,Franck Natali,Benjamin Damilano,Denis Lefebvreet al. physica status solidi (b), 2009, 246 (4), pp.842-845. ⟨10.1002/pssb.200880614⟩ Article dans une revue istex hal-05311119v1
Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range J. Brault,T. Huault,F. Natali,B. Damilano,D. Lefebvreet al. Journal of Applied Physics, 2009, 105 (3), ⟨10.1063/1.3075899⟩ Article dans une revue hal-05311120v1
Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate Benjamin Damilano,Franck Natali,Julien Brault,Thomas Huault,Denis Lefebvreet al. Applied Physics Express, 2008, 1, pp.121101. ⟨10.1143/APEX.1.121101⟩ Article dans une revue hal-05311128v1
Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots T. Huault,J. Brault,F. Natali,B. Damilano,D. Lefebvreet al. Applied Physics Letters, 2008, 92 (5), ⟨10.1063/1.2841825⟩ Article dans une revue hal-05311124v1
Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots. Maxime Hugues,Mirja Richter,Jean-Michel Chauveau,Benjamin Damilano,Jean-Yves Dubozet al. Japanese Journal of Applied Physics, 2007, 46 (4L), pp.L317. ⟨10.1143/JJAP.46.L317⟩ Article dans une revue hal-01304760v1
Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots. Thierry Bretagnon,Pierre Lefebvre,Pierre Valvin,Richard Bardoux,Thierry Guilletet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (11), pp.113304. ⟨10.1103/PhysRevB.73.113304⟩ Article dans une revue hal-01304534v1
Light-ion beam for microelectronic applications L. Hirsch,P. Tardy,G. Wantz,N. Huby,P. Morettoet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, 240, pp.265-270. ⟨10.1016/j.nimb.2005.06.127⟩ Article dans une revue istex in2p3-00024484v1
Light-ion beam analysis for microelectronic applications Lionel Hirsch,Pascal Tardy,Guillaume Wantz,Nolwen Huby,P. Morettoet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, 240, pp.1 Article dans une revue hal-00183524v1
Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes. Sokratis Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Thierry Taliercio,Bernard Gilet al. Journal of Applied Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩ Article dans une revue hal-01303942v1
Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation. Thierry Bretagnon,Sokratis Kalliakos,Pierre Lefebvre,Pierre Valvin,Bernard Gilet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩ Article dans une revue hal-01303926v1
MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances Y. Cordier,F. Semond,P. Lorenzini,N. Grandjean,F. Nataliet al. Journal of Crystal Growth, 2003, 251, pp.811-815 Article dans une revue hal-00146661v1
Field distribution and collection efficiency in an AlGaN Metal-Semiconductor-Metal detector Lionel Hirsch,P. Moretto,J.Y. Duboz,J.L. Reverchon,B. Damilanoet al. J. of Appl. Phys, 2002, 1, pp.1 Article dans une revue hal-00183530v1
Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes. Sokratis Kalliakos,Xuebin Zhang,Thierry Taliercio,Pierre Lefebvre,Bernard Gilet al. Applied Physics Letters, 2002, 80 (3), pp.428. ⟨10.1063/1.1433165⟩ Article dans une revue hal-01303257v1
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes. Pierre Lefebvre,Thierry Taliercio,Aurélien Morel,Jacques Allègre,Mathieu Gallartet al. Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩ Article dans une revue hal-01303205v1
Nuclear microprobe analysis of GaN based light emitting diodes Lionel Hirsch,Albert-Serge Barriere,P. Moretto,B. Damilano,N. Grandjeanet al. Physica Status Solidi A (applications and materials science), 2001, 188, pp.1 Article dans une revue hal-00183545v1
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy. Pierre Lefebvre,Aurélien Morel,Mathieu Gallart,Thierry Taliercio,Jacques Allègreet al. Applied Physics Letters, 2001, 78 (9), pp.1252. ⟨10.1063/1.1351517⟩ Article dans une revue hal-01303203v1
Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate. Nicolas Grandjean,Benjamin Damilano,Jean Massies,Gérard Neu,M Teissereet al. Journal of Applied Physics, 2000, 88 (1), pp.183. ⟨10.1063/1.373640⟩ Article dans une revue hal-01302893v1

Communication dans un congrès (37)

III-nitride semiconductors are more flexible than other compound semiconductors for integrated photonics and efficient nonlinear interactions Maksym Gromovyi,Nagesh Bhat,Hervé Tronche,Pascal Baldi,Moustafa El Kurdiet al. Gallium Nitride Materials and Devices XX, Jan 2025, San Francisco, United States. pp.13, ⟨10.1117/12.3042971⟩ Communication dans un congrès hal-05357904v1
Fluides quantiques d'excitons indirects dans des puits quantiques GaN/AlGaN : vers une condensation dans l'état sombre T. Guillet,R. Aristegui,C. Brimont,B. Damilano,M. Vladimirova Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France Communication dans un congrès hal-04877745v1
Strain relaxation versus luminescence in (0001) InGaN/GaN quantum wells for emission beyond the green range Magali Morales,Pierre Ruterana,Marie-Pierre Chauvat,Benjamin Damilano,Bernard Gil Gallium Nitride Materials and Devices XIX, Jan 2024, San Francisco, United States. pp.PC128860D, ⟨10.1117/12.3000165⟩ Communication dans un congrès hal-04657284v1
Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvature Jules Duraz,Edmond Cambril,Etienne Herth,Éric Frayssinet,Benjamin Damilanoet al. Compound Semiconductor Week 2023 (CSW 2023), May 2023, Jeju, South Korea Communication dans un congrès hal-04683266v1
Origine du twist entre les îlots de croissance de semi-conducteurs tétra-coordonnés hétéroépitaxiés selon des directions hexagonales. Philippe Vennéguès,Ludovic Largeau,Virginie Brändli,Benjamin Damilano,Karine Tavernieret al. Conférence MATEPI 2023, Jul 2023, Paris, France Communication dans un congrès hal-04225165v1
FABRICATION AND CHARACTERIZATION TECHNIQUES TO STUDY FLEXIBLE MICRO LIGHT-EMITTING DIODES WITH A MILLIMETRIC RADIUS OF CURVATURE Jules Duraz,Edmond Cambril,Etienne Herth,Benjamin Damilano,Suresh Sundaramet al. Journées Nationales sur les Technologies Emergentes en micro-nanofabrication (JNTE), Nov 2022, Besançon, France Communication dans un congrès hal-04683281v1
Electrical control of excitons in GaN/(Al,Ga)N quantum wells Rémi Aristegui,François Chiaruttini,Benoit Jouault,Christelle Brimont,Thierry Guilletet al. International Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany Communication dans un congrès hal-04874254v1
Analyzing polarized metasurface holograms by vectorial ptychography Arthur Baroni,Qinghua Song,Rajath Sawant,Peinan Ni,Virginie Brandliet al. Focus on Microscopy 2021 (FOM2021), Mar 2021, online, Netherlands Communication dans un congrès hal-03183699v1
DUV LEDs based on AlGaN quantum dots Julien Brault,Mohamed Al Khalfioui,Mathieu Leroux,Samuel Matta,Thi Huong Ngoet al. SPIE OPTO, Mar 2021, Online Only, United States. pp.16, ⟨10.1117/12.2576135⟩ Communication dans un congrès hal-03366593v1
Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures Masha Vladimirova,François Chiaruttini,Thierry Guillet,Christelle Brimont,Denis Scalbertet al. Optics of Excitons in Confined Systems, University of Dortmund, Aug 2021, Dortmund, Germany Communication dans un congrès hal-04878035v1
Vectorial Hologram Based on Pixelated Metasurface Qinghua Song,Arthur Baroni,Rajath Sawant,Peinan Ni,Virginie Brandliet al. CLEO: Applications and Technology 2020, OSA / IEEE, May 2020, Wahington, DC (virtual), United States. pp.ATh4I.6, ⟨10.1364/CLEO_AT.2020.ATh4I.6⟩ Communication dans un congrès hal-02962142v1
Analyzing full-polarized metasurface holograms by vectorial ptychography Arthur Baroni,Virginie Chamard,Qinghua Song,Rajath Sawant,Peinan Niet al. Focus On Microscopy 2020 (FOM 2020) (Canceled Covid-19), Apr 2020, Osaka, Japan Communication dans un congrès hal-02537380v1
Controlled and thermalized indirect exciton fluids in a GaN/AlGaN quantum well with electrostatic traps Thierry Guillet,François Chiaruttini,Christelle Brimont,Benoit Jouault,Pierre Lefebvreet al. 20th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19), Jul 2019, Suzdal, Russia Communication dans un congrès hal-04874180v1
Control Over Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures Maria Vladimirova,François Chiaruttini,Thierry Guillet,Christelle Brimont,Benoit Jouaultet al. 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States Communication dans un congrès hal-02466858v1
Control over dipolar exciton fluids in GaN/(AlGa)N nanostructures Maria Vladimirova,François Chiaruttini,Thierry Guillet,Christelle Brimont,Pierre Lefebvreet al. 5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia Communication dans un congrès hal-02466887v1
Electrostatic trapping of indirect excitons in GaN/AlGaN quantum wells. François Chiaruttini,Thierry Guillet,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. International Conference on the Physics of Semiconductors, Jul 2018, Montpellier, France Communication dans un congrès hal-01907806v1
Phase transition of indirect excitons in GaN quantum wells. Thierry Guillet,François Chiaruttini,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. International Workshop on Nitride semiconductors - IWN2018., Nov 2018, Kanazawa, Japan Communication dans un congrès hal-01910225v1
Trapping dynamics of indirect excitons into electrostatic traps in GaN quantum wells. Thierry Guillet,François Chiaruttini,Christelle Brimont,Thierry Bretagnon,Laetitia Doyennetteet al. TERAMETANANO-3: Terahertz Emission, Metamaterials and Nanophotonics., Alexey Kavokin - Jerome Tignon - Timothy C. H. Liew - Pavel Belov, Mar 2018, Uxmal, Mexico Communication dans un congrès hal-01908823v1
Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD Christelle Brimont,Laetitia Doyennette,Farsane Tabataba-Vakili,I. Roland,M. El Kurdiet al. International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan Communication dans un congrès hal-01952415v1
Indirect Excitons in Group III-Nitride-Based Quantum Wells. Pierre Lefebvre,Benoit Jouault,Thierry Guillet,Christelle Brimont,Pierre Valvinet al. CIMTEC 2018 - 14th Intl Conference on Modern Materials and Technologies - 8th Forum on New Materials, Shuji NAKAMURA; University of California; USA (Honorary Chair) Michele MUCCINI; CNR-ISMN; Italy (C, Jun 2018, Pérouse, Italy Communication dans un congrès hal-01908795v1
On the nature of light emission in polar GaN/(AlGa)N quantum wells Maria Vladimirova,Thierry Guillet,Christelle Brimont,Denis Scalbert,Benoit Jouaultet al. International Conference on Hybrid Photonics and Materials, Sep 2017, Miconos, Greece Communication dans un congrès hal-01932705v1
High Temperature Annealing of MBE-grown Mg-doped GaN Sylvie Contreras,Leszek Konczewicz,Herve Peyre,Sandrine Juillaguet,M. Al Khalfiouiet al. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, Peking, China. pp.UNSP 012018, ⟨10.1088/1742-6596/864/1/012018⟩ Communication dans un congrès hal-01935176v1
Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells. Masha Vladimirova,Thierry Guillet,Benoit Jouault,Christelle Brimont,Denis Scalbertet al. International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN18., Sven Höfling, Alexei Kavokin, Jul 2017, Würtzburg, Germany Communication dans un congrès hal-01908565v1
Nitride-on-silicon platform for UV-visible photonics with integrated microlaser sources. Julien Sellés,Thierry Guillet,V. Crepel,B. Gayral,B. Damilanoet al. META’17, the 8th International Conference on Metamaterials, Photonic Crystals and Plasmonics, Jul 2017, Incheon - Seoul, South Korea Communication dans un congrès hal-01952364v1
Indirect excitons in polar GaN/(AlGa)N quantum wells Maria Vladimirova,Thierry Guillet,Christelle Brimont,Pierre Lefebvre,Thierry Bretagnonet al. International school/colloquium in honor of E. Gross, Oct 2017, St-Petersbourg, Russia Communication dans un congrès hal-01932812v1
Nitride-on-Silicon microdisk lasers covering the blue to UV-C spectral range Julien Sellés,V. Crepel,Christelle Brimont,Bruno Gayral,Meletios Mexiset al. International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States Communication dans un congrès hal-01951054v1
Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures Thi Huong Ngo,Daniel Rosales,Bernard Gil,Pierre Valvin,Benjamin Damilanoet al. GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, san francisco, United States. pp.93630K, ⟨10.1117/12.2076208⟩ Communication dans un congrès hal-01238745v1
Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates Julien Selles,Daniel Rosales,Bernard Gil,Guillaume Cassabois,Thierry Guilletet al. GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, San Francisco, United States. pp.93630Z, ⟨10.1117/12.2076284⟩ Communication dans un congrès hal-01132346v1
Growth of GaN Nanostructures with Polar and Semipolar Orientations for the Fabrication of UV LEDs Julien Brault,B. Damilano,Daniel Rosales,Thierry Bretagnon,Bernard Gil SPIE GALLIUM NITRIDE MATERIALS AND DEVICES IX, Feb 2014, san francisco, United States. pp.89860Z, ⟨10.1117/12.2036924⟩ Communication dans un congrès hal-01021435v1
Radiative lifetime in wurtzite GaN/AlN quantum dots. Richard Bardoux,T. Bretagnon,Thierry Guillet,P. Lefebvre,T. Taliercioet al. International Symposium on Blue Laser and Light Emitting Diodes (ISBLED06), May 2006, Montpellier, France. pp.183, ⟨10.1002/pssc.200673559⟩ Communication dans un congrès hal-00389911v1
Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots. Pierre Lefebvre,Thierry Bretagnon,Thierry Taliercio,Thierry Guillet,Bernard Gilet al. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany Communication dans un congrès hal-01309937v1
Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots S. Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Sandrine Juillaguet,T. Taliercioet al. 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. pp.2779-2782, ⟨10.1002/pssb.200404996⟩ Communication dans un congrès hal-00543738v1
Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots. Pierre Lefebvre,Sokratis Kalliakos,Thierry Bretagnon,Thierry Taliercio,Bernard Gilet al. E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France Communication dans un congrès hal-01310227v1
Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells Aurélien Morel,Pierre Lefebvre,Thierry Taliercio,Bernard Gil,Nicolas Grandjeanet al. International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩ Communication dans un congrès istex hal-01319596v1
Optical properties of GaN/AlN quantum boxes under high photo-excitation S. Kalliakos,Thierry Bretagnon,Pierre Lefebvre,Sandrine Juillaguet,T. Taliercioet al. 5th International Conference on Nitride Semiconductors (ICNS-5), Axel Hoffmann, May 2003, Nara, Japan. pp.2666-2669, ⟨10.1002/pssc.200303270⟩ Communication dans un congrès hal-00543736v1
MBE growth of high quality AlGaN/GaN HEMTs on resistive Si(111) substrate with RF small signal and power performances Y. Cordier,F. Semond,P. Lorenzini,N. Grandjean,F. Nataliet al. 2002, pp.99-100 Communication dans un congrès hal-00149696v1
AlGaN/GaN HEMTs on resistive Si(111) substrate : from material assessment to RF power performances Y. Cordier,F. Semond,P. Lorenzini,N. Grandjean,F. Nataliet al. 2002, pp.61-64 Communication dans un congrès hal-00149701v1

Poster de conférence (17)

GaN/AlGaN quantum wells grown on high-quality GaN substrates in the perspective of indirect exciton diffusion Benjamin Damilano,R. Aristégui,H. Teisseyre,S. Vézian,V. Guigozet al. 22nd EuroMBE workshop, Mar 2025, Auron, France Poster de conférence hal-05416171v1
Molecular beam epitaxy of GaN/AlxGa1-xN quantum wells on high-quality GaN substrates for indirect exciton diffusion Benjamin Damilano,R. Aristégui,H. Teisseyre,S. Vézian,V. Guigozet al. 15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmo, Sweden Poster de conférence hal-05416188v1
Dark lakes of cold dipolar exciton fluids Rémi Aristégui,Thierry Guillet,Christelle Brimont,Aurélie Lloret,Benjamin Damilanoet al. Optics of Excitons in Confined Systems (OECS), Jul 2025, Warsaw, Poland. Poster de conférence hal-05417547v1
Influence of dipole length on spatio-temporal behavior of excitonic fluids hosted by GaN/(AlGa)N QWs Rémi Aristegui,Thierry Guillet,Christelle Brimont,Benjamin Damilano,Maria Vladimirova Physics of Excitons and Polaritons in Semiconductors (PEPS 2024), Aug 2024, Reykyavik, Iceland Poster de conférence hal-04880367v1
Tuning GaN/AlGaN quantum well emission by deposition of Few-Layer Graphene and Nickel/Gold films Christelle Brimont,Rémi Aristegui,Pierre Lefebvre,Thierry Guillet,Maria Vladimirovaet al. ICNS -14th International Conference on Nitride Semiconductors, Nov 2023, Fukuoka, Japan. Poster de conférence hal-04793643v1
Probing the Mott transition of indirect excitons in GaN/(AlGa)N heterostructures François Chiaruttini,Christelle Brimont,Denis Scalbert,Steeve Cronenberger,Pierre Lefebvreet al. International Workshop on Nitride Semiconductors (IWN 2022), Oct 2022, Berlin, Germany Poster de conférence hal-04874207v1
Gain modeling in InGaN / GaN microdisk lasers Christelle BRIMONT,François Chiaruttini,Thierry Guillet,Farsane Tabataba-Vakili,Iannis Rolandet al. ICNS-13 — 13th International Conference on Nitride Semiconductors 2019, Jul 2019, Seattle (USA), Washington, United States Poster de conférence hal-04793557v1
Comparison of UV-C and blue emitting nitride-on-silicon microdisk lasers Julien Sellés,Thierry Guillet,V. Crepel,B. Gayral,B. Damilanoet al. 34th International Conference on the Physics of Semiconductors (ICPS), Jul 2018, Montpellier, France Poster de conférence hal-01952385v1
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN Sylvie Contreras,Leszek Konczewicz,Sandrine Juillaguet,Herve Peyre,Mohamed Al Khalfiouiet al. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan Poster de conférence hal-01937531v1
Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x&lt;0.4) grown by molecular epitaxy Julien Brault,Mathieu Leroux,Samuel Matta,Mohamed Al Khalfioui,Benjamin Damilanoet al. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan Poster de conférence hal-01937537v1
Defect-free InGaN nanowires on silicon whatever the indium composition Mohammed Zeghouane,Elissa Roche,Geoffrey Avit,Yamina Andre,Catherine Bougerolet al. RÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France Poster de conférence hal-01659715v1
Defect-free InGaN nanowires on silicon whatever the indium composition Geoffrey Avit,Elissa Roche,Mohammed Zeghouane,Yamina Andre,Catherine Bougerolet al. ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France Poster de conférence hal-01659728v1
Quantum Dot based UV Light Emitting Diodes Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Mathieu Leroux,Benjamin Damilanoet al. 12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France Poster de conférence hal-01937757v1
On the nature of light emission in polar GaN/(AlGa)N quantum wells. Christelle Brimont,Thierry Guillet,Denis Scalbert,Benoit Jouault,Pierre Valvinet al. 12th International Conference on Nitride Semiconductors – ICNS12., Jul 2017, Strasbourg, France. Poster de conférence hal-01907860v1
Malices et fourberies des boîtes quantiques GaN/AlN. Pierre Lefebvre,Thierry Bretagnon,Thierry Taliercio,Thierry Guillet,Bernard Gilet al. Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France. Poster de conférence hal-01312258v1
Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots. Pierre Lefebvre,Thierry Bretagnon,Thierry Taliercio,Thierry Guillet,Bernard Gilet al. Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland Poster de conférence hal-01312253v1
Carrier recombination dynamics in GaN/AlN quantum dots. Thierry Bretagnon,Pierre Lefebvre,Pierre Valvin,Thierry Taliercio,Thierry Guilletet al. EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France Poster de conférence hal-01310832v1

Brevet (1)

Device and method for providing illumination for total-internal-reflection fluorescence microscopy using opaque mask Alejandro M. Yacomotti,Maia Brunstein,Andrea Cattoni,Sophie Bouchoüle,Benjamin Damilanoet al. France, Patent n° : US2019285547 (A1). 2019 Brevet hal-04141317v1