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benoit jouault
Benoit JOUAULT
10
Documents
Identifiants chercheurs
- benoitjouault
- 0000-0002-2993-6916
- IdRef : 166218154
Présentation
**Position**
Directeur de Recherche CNRS (Senior CNRS researcher) at Laboratoire Charles Coulomb, Montpellier, France, in the team:
Electronic transport and teraHartz spectroscopy.
Research topics: Transport phenomena in semiconductors, nanostructures, topological insulators, graphene and graphene-like materials.
**Education and qualification**
- 2006-09-01: Université of Montpellier, habilitation
- 1995-09-01 to 1998-10-05 | Ph. D Thesis (Ecole Polytechnique: Palaiseau, FR)
Publications
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Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum WellsPhysical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩
Article dans une revue
hal-01353893v2
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Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells.Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (20), pp.205424. ⟨10.1103/PhysRevB.91.205424⟩
Article dans une revue
hal-01154792v1
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Ballistic spin transport in exciton gasesPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (19), pp.195309. ⟨10.1103/PhysRevB.88.195309⟩
Article dans une revue
hal-00911638v1
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Indirect excitons in polar group III nitride quantum wells.8th International Conference on Materials Science and Condensed Matter Physics, Leonid Kulyuk, Sep 2016, Chisinau, Moldova
Communication dans un congrès
hal-01388929v1
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Indirect excitons in AlGaN/GaN polar quantum wells.17th International Conference on Physics of Light-Matter Coupling in Nanostructures – PLMCN17., Yasuhiko Arakawa, Mar 2016, Nara, Japan
Communication dans un congrès
hal-01388908v1
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Transport of indirect excitons in GaN quantum wells.International Workshop on Nitride Semiconductors (IWN 2016), Alan Doolittle, Tomás Palacios, Stacia Keller, Siddharth Rajan, Oct 2016, Orlando, United States
Communication dans un congrès
hal-01388983v1
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Indirect excitons in wide band gap semiconductors.International School on Nanophotonics and Photovoltaics. INSP 2015., MISP : Mediterranean Institute of Fundamental Physics, Sep 2015, Cefalu, Italy
Communication dans un congrès
hal-01389731v1
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates.Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference, François Dubin, ICFO (ES); Vittorio Pellegrini, Scuola Normale Superiore & IIT (IT); Aron Pinczuk, Columbia University (USA); David Ritchie, University of Cambridge (UK); Massimo Rontani, Cnr Nano (IT); Thomas Satzoukidis, Scuola Normale Superiore (IT); Masha Vladimirova, CNRS (FR), Sep 2015, Pise, Italy
Communication dans un congrès
hal-01305122v1
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Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells.15th conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN15), Bernard Gil, Jun 2014, Montpellier, France
Communication dans un congrès
hal-01305383v1
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Exciton Spin Currents: TheoryOptics of Excitons in Confined Systems, Sep 2013, Rome, Italy
Communication dans un congrès
hal-00911657v1
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