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Bertrand Vilquin
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Documents
Présentation
Reader (HDR) in condensed matters
Bertrand Vilquin (reader, HDR, Ecole Centrale de Lyon) has been working on integration of perovskite materials since the beginning of his PhD in 1999 at Université de Caen (France). In 2002, he joined the Institute for Scientific and Industrial Research at Osaka University (Japan) for a JSPS post doctorate fellowship. In 2005, he moved to Université Paris XI to work on an industrial project with ALTIS Semiconductors to realize New Generation of nanoscale MRAM devices. In 2006, he became lecturer at Ecole Centrale de Lyon working on the integration of perovskite materials on silicon though academic and industrial projects. He has a rich experience in both national and international research projects and had been the coordinator of 2 ANR projects. He was invited professor at Osaka University (Japan) in 2012 and at the University of Tokyo (Japan) in 2016. He became associate professor at Université de Sherbrooke (Canada) in 2016. He is the coordinator of the “nanoscale engineering” master course of University of Lyon. He successfully obtained his habilitation to conduct research (HDR) in 2018 and he is member of IEEE and SFP.
**Project leader:**
\- ANR MINOS (2007-2011)
\- ANR SURFFER (2010-2013)
**WorkPackage coordinator:**
\- ANR PIEZO2POWER (2011-2015)
\- ANR INTENSE (2015-2017)
\- H2020 ICT 3eFERRO (2018-2021)
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Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layersAPL Materials, 2019, 7 (8), pp.081109. ⟨10.1063/1.5110894⟩
Article dans une revue
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Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputteringJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2019, 37 (2), pp.021203. ⟨10.1116/1.5060643⟩
Article dans une revue
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Engineering the nano and micro structures of sputtered HfZrO2 thin films15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel
Communication dans un congrès
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Elaboration and imprint consideration in HfZrO2 ferroelectric capacitorsHigh k Workshop 2023, NamLab, May 2023, Dresden, Germany
Communication dans un congrès
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How ALD deposition analysis can help PVD deposition process!9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France
Communication dans un congrès
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How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical propertiesEMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France
Communication dans un congrès
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Influence of the electrode interface on the properties of ferroelectric HfZrO2High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany
Communication dans un congrès
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Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration EngineeringISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France
Communication dans un congrès
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Tracking polarization loss and imprint during electrical tests in sputtered TiN/HZO/TiN capacitorsNovel high-k workshop applications, NamLab, Apr 2021, Dresden, Germany
Communication dans un congrès
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Nanostructuration effect on the properties of ferroelectric HfZrO26th edition of the International Workshop of Materials Physics, The National Institute of Materials Physics (NIMP), Sep 2021, Bucarest, Romania
Communication dans un congrès
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The discovery of ferroelectricity in HfO26th Conference of Bangladesh Crystallographic Association, Bangladesh Crystallographic Association, Jan 2021, Dhaka, Bangladesh
Communication dans un congrès
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Huge reduction of wake-up effect in ferroelectric HfZrO2 nanostructuresEMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland
Communication dans un congrès
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Ferroelectric HfO2 based devices fabrication and remaining issuesIUMRS-ICA 2019, Sep 2019, Perth, Australia
Communication dans un congrès
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Fabrication de dispositifs ferroélectriques à partir de HfO2 dopé et les problèmes en suspensRéunion thématique du GDR OXYFUN « Couches minces d'oxydes fonctionnels et applications en électronique et photonique », GDR OXYFUN, Oct 2019, Caen, France
Communication dans un congrès
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Huge working pressure effect on the ferroelectric properties of RF sputtered hafnia/zirconia layersHigh-k Workshop 2019, NamLab, Jun 2019, Dresden, Germany
Communication dans un congrès
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Ferroelectric HfO2 based devices fabrication and remaining issuesIEEE 39th International Conference on ELECTRONICS AND NANOTECHNOLOGY ELNANO-2019, IEEE, Apr 2019, Kyiv, Ukraine
Communication dans un congrès
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Reduction of HfZrO2 capacitor wake-up effectPoster de conférence hal-03273119v1 |