Jean-Baptiste Rodriguez

Identifiants chercheurs

IdHAL :

bobjb

ORCID :

0000-0002-1930-1984

IdRef :

074248979

ResearcherID :

http://www.researcherid.com/rid/B-9448-2008

Publications

Article dans une revue (97)

In-situ observations of misfit dislocation motion in AlSb/GaSb dislocation filter layer structures Karl Graser,Audrey Gilbert,Jean-Baptiste Rodriguez,Eric Tournié,Achim Trampert Acta Materialia, 2026, 326, pp.121946. ⟨10.1016/j.actamat.2026.121946⟩ Article dans une revue hal-05470979v1
Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics Manuel Meyer,Jonas Baumbach,Sergey Krishtopenko,Adriana Wolf,Monika Emmerlinget al. Science Advances , 2025, 11 (43), ⟨10.1126/sciadv.adz2408⟩ Article dans une revue hal-05364817v1
High-performance GaSb-based interband cascade lasers emitting at 4.7 µm grown on GaAs and Si substrates Maeva Fagot,Daniel A Díaz-Thomas,Audrey Gilbert,Michel Ramonda,Yves Rouillardet al. Optical Materials Express, 2025, 15 (11), pp.2654. ⟨10.1364/ome.568659⟩ Article dans une revue hal-05454354v1
MBE growth and properties of GaInAsSb alloys deep inside the miscibility gap T. Sabardeil,G. Gregoire,J.-L. Reverchon,V. Trinite,Eric Tourniéet al. Journal of Crystal Growth, 2025, 657, pp.128107. ⟨10.1016/j.jcrysgro.2025.128107⟩ Article dans une revue hal-05454793v1
MBE growth of GaSb on Ge-based templates grown on Si for mid-infrared photonics [Invited] Milan Silvestre,Sébastien Lacaze,Audrey Gilbert,S Calcaterra,A de Cerdeira Oliveiraet al. Optical Materials Express, 2025, 15 (10), pp.2499. ⟨10.1364/ome.569432⟩ Article dans une revue hal-05283375v1
Strain relief and threading dislocation reduction in GaSb/AlSb/GaSb heterostructures grown on Si(001) substrate K. Graser,A. Gilbert,J.-B. Rodriguez,Eric Tournié,A. Trampert Journal of Applied Physics, 2025, 137 (20), ⟨10.1063/5.0268051⟩ Article dans une revue hal-05457296v1
Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing Daniel Andrés Díaz-Thomas,Diba Ayache,Maëva Fagot,Zeineb Loghmari,Audrey Gilbertet al. Applied Physics Letters, 2025, 126 (3), pp.031102. ⟨10.1063/5.0242398⟩ Article dans une revue hal-04912746v1
Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy Audrey Gilbert,M. Ramonda,G. Patriarche,E. Tournié,J.‐b. Rodriguez Advanced Physics Research, In press, ⟨10.1002/apxr.202400090⟩ Article dans une revue hal-04678079v1
Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates Maeva Fagot,Daniel Andrés Díaz-Thomas,Audrey Gilbert,Gad Kombila,Michel Ramondaet al. Optics Express, 2024, 32 (7), pp.11057. ⟨10.1364/OE.514069⟩ Article dans une revue hal-04739941v1
Improved light transmission for III-V lasers monolithically integrated on Si platforms Michele Paparella,Andres Remis,Marco Grande,Thierry Taliercio,Laurent Ceruttiet al. Optics Express, 2024, 32 (22), pp.38994. ⟨10.1364/oe.537703⟩ Article dans une revue hal-04739667v1
Performance of long-wave infrared band of microstructured heavily doped InAsSb on type II superlattice layer part 1: the photonic study Clément Gureghian,Jean-Baptiste Rodriguez,Christophe Dupuis,Nathalie Bardou,Laurence Ferlazzoet al. Optics Express, 2024, 32 (8), pp.13438-13449. ⟨10.1364/oe.516043⟩ Article dans une revue hal-04569013v1
Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy A. Gilbert,K. Graser,Michel Ramonda,A. Trampert,J.‐b. Rodriguezet al. Advanced Physics Research, 2024, 4 (4), pp.2400126. ⟨10.1002/apxr.202400126⟩ Article dans une revue hal-05087118v1
Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon H. Kim,P. Didier,S. Zaminga,D. Díaz-Thomas,A. Baranovet al. APL Photonics, 2024, 9 (10), pp.106103-1:106103-9. ⟨10.1063/5.0214252⟩ Article dans une revue hal-04820405v1
Multiprobe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence Salah Benlemqwanssa,Sergey Krishtopenko,Manuel Meyer,Laurent Bonnet,Adriana Wolfet al. Physical Review Applied, 2024, 22 (6), pp.064059. ⟨10.1103/PhysRevApplied.22.064059⟩ Article dans une revue hal-04881971v1
Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides Andres Remis,Laura Monge-Bartolome,Michele Paparella,Audrey Gilbert,Guilhem Boissieret al. Light: Science and Applications, 2023, 12, pp.150. ⟨10.1038/s41377-023-01185-4⟩ Article dans une revue hal-04136332v1
Engineering the Infrared Optical Response of Plasmonic Structures with ϵ‐Near‐Zero III‐V Semiconductors Pierre Fehlen,Julien Guise,Guillaume Thomas,Fernando Gonzalez-Posada,Patricia Lorenet al. Advanced Optical Materials, 2023, 12 (4), pp.2301656. ⟨10.1002/adom.202301656⟩ Article dans une revue hal-05002548v1
Measuring low doping level and short carrier lifetime in indium arsenide with a contactless terahertz technique at room temperature J. Guise,H. Ratovo,Monique Thual,P. Fehlen,F. Gonzalez-Posadaet al. Journal of Applied Physics, 2023, 134 (16), pp.165701. ⟨10.1063/5.0167272⟩ Article dans une revue hal-04265135v1
Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying Audrey Gilbert,Michel Ramonda,Laurent Cerutti,Charles Cornet,Gilles Patriarcheet al. Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩ Article dans une revue (article de synthèse) hal-04107444v1
Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon Marta Rio Calvo,Jean-Baptiste Rodriguez,Charles Cornet,Laurent Cerutti,Michel Ramondaet al. Advanced Electronic Materials, 2022, 8 (1), pp.2100777. ⟨10.1002/aelm.202100777⟩ Article dans une revue hal-03404002v1
Large inverted band gap in strained three-layer InAs/GaInSb quantum wells Colin Avogadri,Sébastian Gebert,Sergey Krishtopenko,Ivanovitch Castillo Arvelo,Christophe Consejoet al. Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩ Article dans une revue hal-03939599v2
Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms Michele Paparella,Laura Monge Bartolome,Jean-Baptiste Rodriguez,Laurent Cerutti,Marco Grandeet al. IEEE Photonics Journal, 2022, 14, pp.6651206. ⟨10.1109/jphot.2022.3203593⟩ Article dans une revue hal-03779758v1
Magneto-spectroscopy investigation of InAs/InAsSb superlattices for midwave infrared detection G. Krizman,Francesca Carosella,J. Bermejo-Ortiz,Alwïn Philippe,Jean-Baptiste Rodriguezet al. Journal of Applied Physics, 2021, 130 (5), pp.055704. ⟨10.1063/5.0054320⟩ Article dans une revue hal-03366679v1
Thermal performance of GaInSb quantum well lasers for silicon photonics applications C. R. Fitch,G. W. Read,I. P. Marko,D. A. Duffy,L Ceruttiet al. Applied Physics Letters, 2021, 118 (10), pp.101105. ⟨10.1063/5.0042667⟩ Article dans une revue hal-03184764v1
Quantum well interband semiconductor lasers highly tolerant to dislocations Laurent Cerutti,Daniel A Díaz Thomas,Jean-Baptiste Rodriguez,Marta Rio Calvo,Gilles Patriarcheet al. Optica, 2021, 8 (11), pp.1397-1402. ⟨10.1364/optica.438272⟩ Article dans une revue hal-03417026v1
GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates Laura Monge-Bartolome,Bei Shi,Billy Lai,Guilhem Boissier,Laurent Ceruttiet al. Optics Express, 2021, 29 (7), pp.11268-11276. ⟨10.1364/oe.419396⟩ Article dans une revue hal-03184763v1
Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain Rodolphe Alchaar,Jean Baptiste Rodriguez,Linda Höglund,Shagufta Naureen,Eric Costardet al. Opto-Electronics Review, 2020, 28, pp.164. ⟨10.24425/opelre.2020.134425⟩ Article dans une revue hal-03042928v1
InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate Z. Loghmari,J.-B. Rodriguez,A. Baranov,M. Rio-Calvo,L. Ceruttiet al. APL Photonics, 2020, 5 (4), pp.041302. ⟨10.1063/5.0002376⟩ Article dans une revue hal-02544106v1
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut Charles Cornet,Simon Charbonnier,Ida Lucci,Lipin Chen,Antoine Létoublonet al. Physical Review Materials, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩ Article dans une revue hal-02878985v1
Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon M. Rio Calvo,Laura Monge-Bartolomé,M. Bahriz,Guilhem Boissier,Laurent Ceruttiet al. Optica, 2020, 7 (4), pp.263. ⟨10.1364/OPTICA.388383⟩ Article dans une revue hal-02520879v1
Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template Laura Monge-Bartolomé,Tiphaine Cerba,Daniel A Díaz-Thomas,Michaël Bahriz,Marta Calvoet al. Optics Express, 2020, 28 (14), pp.20785. ⟨10.1364/OE.397164⟩ Article dans une revue hal-02884457v1
The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates Michael Niehle,Jean-Baptiste Rodriguez,Laurent Cerutti,Eric Tournié,Achim Trampert physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2019, 13 (10), pp.1900290. ⟨10.1002/pssr.201900290⟩ Article dans une revue hal-02342615v1
Temporal stability and correctability of a MWIR T2SL focal plane array I. Ribet-Mohamed,J. Nghiem,M. Caes,M. Guenin,L. Höglundet al. Infrared Physics and Technology, 2019, 96, pp.145-150. ⟨10.1016/j.infrared.2018.10.028⟩ Article dans une revue hal-02864715v1
Molecular-beam epitaxy of GaInSbBi alloys O. Delorme,L. Cerutti,E. Luna,A. Trampert,E. Tourniéet al. Journal of Applied Physics, 2019, Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (15), pp.155304. ⟨10.1063/1.5096226⟩ Article dans une revue hal-02326087v1
Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain Rodolphe Alchaar,Jean-Baptiste Rodriguez,L. Höglund,S. Naureen,Philippe Christol AIP Advances, 2019, 9 (5), pp.055012. ⟨10.1063/1.5094703⟩ Article dans une revue hal-02162607v1
Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer M. Rio Calvo,J-B Rodriguez,L. Cerutti,M. Ramonda,G. Patriarcheet al. Journal of Crystal Growth, 2019, pp.125299. ⟨10.1016/j.jcrysgro.2019.125299⟩ Article dans une revue hal-02326060v1
Type I GaSb 1-x Bi x /GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment R. Kudrawiec,J. Kopaczek,O. Delorme,M. Polak,M. Gladysiewiczet al. Journal of Applied Physics, 2019, 125 (20), pp.205706. ⟨10.1063/1.5094159⟩ Article dans une revue hal-02154946v1
Study of the MTF of a MWIR T2SL focal plane array in IDDCA configuration J. Nghiem,J. Jaeck,S. Derelle,J. Primot,M. Caeset al. Infrared Physics and Technology, 2019, 96, pp.192-198. ⟨10.1016/j.infrared.2018.11.004⟩ Article dans une revue hal-02864708v1
On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study Michael Niehle,Jean-Baptiste Rodriguez,Laurent Cerutti,Eric Tournié,Achim Trampert Acta Materialia, 2018, 143, pp.121 - 129. ⟨10.1016/j.actamat.2017.09.055⟩ Article dans une revue istex hal-01754869v1
Universal description of III-V/Si epitaxial growth processes Ida Lucci,Simon Charbonnier,L. Pedesseau,Maxime Vallet,Laurent Ceruttiet al. Physical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩ Article dans une revue hal-01833206v1
Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness E. Luna,O. Delorme,L. Cerutti,E. Tournié,J-B Rodriguezet al. Semiconductor Science and Technology, 2018, 33 (9), pp.094006. ⟨10.1088/1361-6641/aad5c4⟩ Article dans une revue hal-02080292v1
Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications E. Luna,O. Delorme,L. Cerutti,E. Tournié,J.-B. Rodriguezet al. Applied Physics Letters, 2018, 112 (15), ⟨10.1063/1.5024199⟩ Article dans une revue hal-01770179v1
Quantum cascade lasers grown on silicon Hoang Nguyen-Van,Alexei Baranov,Zeineb Loghmari,Laurent Cerutti,Jean-Baptiste Rodriguezet al. Scientific Reports, 2018, 8 (1), ⟨10.1038/s41598-018-24723-2⟩ Article dans une revue hal-02067224v1
A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting Ida Lucci,Simon Charbonnier,Maxime Vallet,Pascal Turban,Yoan Légeret al. Advanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩ Article dans une revue hal-01803990v1
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition T. Cerba,M. Martin,J. Moeyaert,S. David,J. Rouvièreet al. Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩ Article dans une revue hal-01954336v1
Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode Anne Ponchet,G. Patriarche,J. B. Rodriguez,L. Cerutti,E. Tournié Applied Physics Letters, 2018, 113 (19), pp.191601. ⟨10.1063/1.5055056⟩ Article dans une revue hal-01913668v1
In situ determination of the growth conditions of GaSbBi alloys O. Delorme,L. Cerutti,E. Tournié,J.-B. Rodriguez Journal of Crystal Growth, 2018, 495, pp.9-13. ⟨10.1016/j.jcrysgro.2018.05.010⟩ Article dans une revue hal-02080206v1
Design of InAs/GaSb superlattice infrared barrier detectors M. Delmas,R. Rossignol,J.B. Rodriguez,Philippe Christol Superlattices and Microstructures, 2017, 104, pp.402 - 414. ⟨10.1016/j.spmi.2017.03.001⟩ Article dans une revue hal-01626984v1
Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si A. Castellano,L. Cerutti,J. B. Rodriguez,G. Narcy,A. Garreauet al. APL Photonics, 2017, 2 (6), ⟨10.1063/1.4983389⟩ Article dans une revue hal-01626979v1
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys Olivier Delorme,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié Journal of Crystal Growth, 2017, 477, pp.144-148. ⟨10.1016/j.jcrysgro.2017.03.048⟩ Article dans une revue hal-01755264v1
Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer Jean-Baptiste Rodriguez,Laurent Cerutti,G. Patriarche,L. Largeau,K. Madiomananaet al. Journal of Crystal Growth, 2017, 477, pp.65-71. ⟨10.1016/j.jcrysgro.2017.04.003⟩ Article dans une revue hal-01755268v1
Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations Michael Niehle,Achim Trampert,Jean-Baptiste Rodriguez,Laurent Cerutti,Eric Tournié Scripta Materialia, 2017, 132, pp.5 - 8. ⟨10.1016/j.scriptamat.2017.01.018⟩ Article dans une revue istex hal-01626953v1
GaSbBi/GaSb quantum well laser diodes O. Delorme,L. Cerutti,E. Luna,G. Narcy,A. Trampertet al. Applied Physics Letters, 2017, 110 (22), ⟨10.1063/1.4984799⟩ Article dans une revue hal-01626914v1
Metamorphic III–V semiconductor lasers grown on silicon Eric Tournié,Laurent Cerutti,Jean-Baptiste Rodriguez,Huiyun Liu,Jiang Wuet al. MRS Bulletin, 2016, 41 (03), pp.218 - 223. ⟨10.1557/mrs.2016.24⟩ Article dans une revue hal-01626680v1
X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates J.B. Rodriguez,K. Madiomanana,L. Cerutti,A. Castellano,E. Tournié Journal of Crystal Growth, 2016, 439, pp.33 - 39. ⟨10.1016/j.jcrysgro.2016.01.005⟩ Article dans une revue hal-01626675v1
Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector Marie Delmas,Jean-Baptiste Rodriguez,Rémi Rossignol,Abigail S. Licht,Edouard Giardet al. Journal of Applied Physics, 2016, 119 (17), ⟨10.1063/1.4948670⟩ Article dans une revue hal-01626682v1
III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range M. Muneeb,A. Vasiliev,A. Ruocco,A. Malik,H. Chenet al. Optics Express, 2016, 24 (9), ⟨10.1364/OE.24.009465⟩ Article dans une revue hal-01626678v1
Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures M. Milla,F Barho,F. Gonzalez-Posada,L. Cerutti,M. Bomerset al. Nanotechnology, 2016, 27 (42), ⟨10.1088/0957-4484/27/42/425201⟩ Article dans une revue hal-01626670v1
Electronic structure of InAs/GaSb superlattice for the modelling of MWIR pin photodiode J. Imbert,V. Trinite,S. Derelle,J. Jaeck,E. Giardet al. Infrared Physics and Technology, 2015, 70, pp.81 - 86. ⟨10.1016/j.infrared.2014.09.035⟩ Article dans une revue hal-01626343v1
GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55- μ m Laurent Cerutti,A. Castellano,J.-B. Rodriguez,M. Bahri,L. Largeauet al. Applied Physics Letters, 2015, 106 (10), pp.101102. ⟨10.1063/1.4914884⟩ Article dans une revue hal-01626349v1
Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes E. Giard,I. Ribet-Mohamed,M. Delmas,J.B. Rodriguez,Philippe Christol Infrared Physics and Technology, 2015, 70, pp.103 - 106. ⟨10.1016/j.infrared.2014.07.034⟩ Article dans une revue hal-01626346v1
Silicon surface preparation for III-V molecular beam epitaxy K. Madiomanana,M. Bahri,J.B. Rodriguez,L. Largeau,L. Ceruttiet al. Journal of Crystal Growth, 2015, 413, pp.17 - 24. ⟨10.1016/j.jcrysgro.2014.12.004⟩ Article dans une revue hal-01626282v1
InAs/GaSb Superlattice Photodiodes Operating in the Midwave Infrared Spectral Domain Philippe Christol,Marie Delmas,Rémi Rossignol,Jean-Baptiste Rodriguez Journal of Physical Chemistry & Biophysics, 2015, 05 (06), ⟨10.4172/2161-0398.1000197⟩ Article dans une revue hal-01756721v1
Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix Thierry Taliercio,Vilianne Ntsame Guilengui,Laurent Cerutti,Jean-Baptiste Rodriguez,Franziska Barhoet al. Optics Express, 2015, 23 (23), ⟨10.1364/OE.23.029423⟩ Article dans une revue hal-01626280v1
Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range Roel Roelkens,Utsav Dave,Alban Gassenq,Nannicha Hattasan,Chen Huet al. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20 (4), pp.394 - 404. ⟨10.1109/JSTQE.2013.2294460⟩ Article dans une revue hal-01623780v1
Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors E. Giard,I. Ribet-Mohamed,J. Jaeck,T. Viale,R. Haïdaret al. Journal of Applied Physics, 2014, 116 (4), ⟨10.1063/1.4890309⟩ Article dans une revue hal-01623607v1
Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics Marie Delmas,Jean-Baptiste Rodriguez,Philippe Christol Journal of Applied Physics, 2014, 116 (11), pp.113101. ⟨10.1063/1.4895983⟩ Article dans une revue hal-01623575v1
Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors Rachid Taalat,Jean-Baptiste Rodriguez,Marie Delmas,Philippe Christol Journal of Physics D: Applied Physics, 2014, 47 (1), ⟨10.1088/0022-3727/47/1/015101⟩ Article dans une revue hal-01623652v1
Optical index measurement of InAs/GaSb type-II superlattice for mid-infrared photodetection at cryogenic temperatures E. Steveler,M. Verdun,B. Portier,P. Chevalier,C. Dupuiset al. Applied Physics Letters, 2014, 105 (14), ⟨10.1063/1.4897273⟩ Article dans une revue hal-01623783v1
Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes E. Giard,R. Taalat,M. Delmas,J.-B. Rodriguez,Philippe Christolet al. Journal of the European Optical Society : Rapid publications, 2014, 9, ⟨10.2971/jeos.2014.14022⟩ Article dans une revue hal-01623612v1
Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm E. Ryckeboer,A. Gassenq,M. Muneeb,N. Hattasan,S. Pathaket al. Optics Express, 2013, 21 (5), ⟨10.1364/OE.21.006101⟩ Article dans une revue hal-01620504v1
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared Roel Roelkens,Utsav Dave,Alban Gassenq,Nannicha Hattasan,Chen Chenet al. Optical Materials Express, 2013, 3 (9), ⟨10.1364/OME.3.001523⟩ Article dans une revue hal-01621428v1
Electrical characterizations of asymmetric InAs/GaSb superlattice MWIR photodiodes R. Taalat,J.B. Rodriguez,C. Cervera,I. Ribet-Mohamed,Philippe Christol Infrared Physics and Technology, 2013, 59, pp.32 - 35. ⟨10.1016/j.infrared.2012.12.006⟩ Article dans une revue hal-01621251v1
III–V/Silicon Photonics for Short-Wave Infrared Spectroscopy Günther Roelkens,William M. J. Green,Bart Kuyken,Xiaoping Liu,Nannicha Hattasanet al. IEEE Journal of Quantum Electronics, 2012, 48 (2), pp.292 - 298. ⟨10.1109/JQE.2011.2178090⟩ Article dans une revue hal-01619607v1
Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain C. Cervera,I. Ribet-Mohamed,R. Taalat,J.-P. Perez,Philippe Christolet al. Journal of Electronic Materials, 2012, 41 (10), pp.2714 - 2718. ⟨10.1007/s11664-012-2035-4⟩ Article dans une revue istex hal-01620112v1
Localized surface plasmon resonances in highly doped semiconductors nanostructures V. N'Tsame Guilengui,L. Cerutti,Jean-Baptiste Rodriguez,E. Tournié,T. Taliercio Applied Physics Letters, 2012, 101 (16), ⟨10.1063/1.4760281⟩ Article dans une revue hal-01619628v1
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip Alban Gassenq,Nannicha Hattasan,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tourniéet al. Optics Express, 2012, 20 (11), ⟨10.1364/OE.20.011665⟩ Article dans une revue hal-01619611v1
Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit Nannicha Hattasan,Alban Gassenq,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tourniéet al. IEEE Photonics Technology Letters, 2011, 23 (23), pp.1760 - 1762. ⟨10.1109/LPT.2011.2169244⟩ Article dans une revue hal-01618842v1
Temperature dependence performances of InAs/GaSb superlattice photodiode Cyril Cervera,K. Jaworowicz,H. Aït-Kaci,R. Chaghi,Jean-Baptiste Rodriguezet al. Infrared Physics and Technology, 2011, 54 (3), pp.258-262. ⟨10.1016/j.infrared.2010.12.025⟩ Article dans une revue istex hal-00641327v1
Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si Jean-Rémy Reboul,Laurent Cerutti,Jean-Baptiste Rodriguez,Pierre Grech,Eric Tournié Applied Physics Letters, 2011, 99 (12), pp.121113. ⟨10.1063/1.3644983⟩ Article dans une revue hal-00641322v1
Noise Characterization of Midwave Infrared InAs/GaSb Superlattice pin Photodiode K. Jaworowicz,Isabelle Ribet-Mohamed,Cyril Cervera,Jean-Baptiste Rodriguez,Philippe Christol IEEE Photonics Technology Letters, 2011, 23 (4), pp.242-244. ⟨10.1109/LPT.2010.2093877⟩ Article dans une revue hal-00641330v1
Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy E. Luna,B. Satpati,J. B. Rodriguez,A. N. Baranov,E. Tourniéet al. Applied Physics Letters, 2010, 96 (2), ⟨10.1063/1.3291666⟩ Article dans une revue hal-01618582v1
GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 mu m at Room Temperature Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié IEEE Photonics Technology Letters, 2010, 22 (8), pp.553-555. ⟨10.1109/LPT.2010.2042591⟩ Article dans une revue hal-00539210v1
Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate A. Khoshakhlagh,F. Jaeckel,C. Hains,Jean-Baptiste Rodriguez,L.R. Dawsonet al. Applied Physics Letters, 2010, 97 (5), pp.051109. ⟨10.1063/1.3457908⟩ Article dans une revue hal-00641375v1
A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement Jean-Baptiste Rodriguez,Cyril Cervera,Philippe Christol Applied Physics Letters, 2010, 97 (25), pp.251113. ⟨10.1063/1.3529940⟩ Article dans une revue hal-00641365v1
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate Elena Plis,Jean-Baptiste Rodriguez,G. Balakrishnan,Y.D. Sharma,H.S. Kimet al. Semiconductor Science and Technology, 2010, 25 (8), pp.085010. ⟨10.1088/0268-1242/25/8/085010⟩ Article dans une revue istex hal-00641377v1
Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization C. Cervera,J. B. Rodriguez,J. P. Perez,H. Ait-Kaci,R. Chaghiet al. Journal of Applied Physics, 2009, 106, pp.033709. ⟨10.1063/1.3191175⟩ Article dans une revue hal-00536295v1
Characterization of midwave infrared InAs/GaSb superlattice photodiode C. Cervera,J. B. Rodriguez,R. Chaghi,H. Aït-Kaci,Philippe Christol Journal of Applied Physics, 2009, 106 (2), ⟨10.1063/1.3174439⟩ Article dans une revue hal-01618128v1
Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes C Chaghi,C. Cervera,H. Aït-Kaci,P. Grech,J B Rodriguezet al. Semiconductor Science and Technology, 2009, 24 (6), ⟨10.1088/0268-1242/24/6/065010⟩ Article dans une revue istex hal-01618130v1
Effect of pressure on electrical properties of short period InAs/GaSb superlattice Leszek Konczewicz,Sylvie Contreras,Hocine Aït-Kaci,Yvan Cuminal,Jean-Baptiste Rodriguezet al. physica status solidi (b), 2009, 246 (3), pp.643 - 647. ⟨10.1002/pssb.200880520⟩ Article dans une revue istex hal-01756707v1
Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate J. B. Rodriguez,L. Cerutti,P. Grech,E. Tournié Applied Physics Letters, 2009, 94 (6), ⟨10.1063/1.3082098⟩ Article dans une revue hal-01617839v1
Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy E. Luna,F. Ishikawa,B. Satpati,Jean-Baptiste Rodriguez,Eric Tourniéet al. Journal of Crystal Growth, 2009, 311, pp.1739-1744. ⟨10.1016/j.jcrysgro.2008.10.039⟩ Article dans une revue istex hal-00462048v1
Design of mid-infrared InAs/GaSb superlattice detectors for room temperature operation Y. Cuminal,J.B. Rodriguez,Philippe Christol Finite Elements in Analysis and Design, 2008, 44 (9-10), pp.611 - 616. ⟨10.1016/j.finel.2008.02.004⟩ Article dans une revue istex hal-01617352v1
Electrical properties of short period InAs/GaSb superlattice Philippe Christol,L. Konczewicz,Y. Cuminal,H. Aït-Kaci,Jean-Baptiste Rodriguezet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2007, 4 (4), pp.1494 - 1498. ⟨10.1002/pssc.200674136⟩ Article dans une revue hal-00103689v3
Interface analysis of InAs/GaSb superlattice grown by MBE Philippe Christol,B. Satpati,Jean-Baptiste Rodriguez,A. Trampert,Eric Tourniéet al. Journal of Crystal Growth, 2007, 301-302, pp.889 - 892. ⟨10.1016/j.jcrysgro.2006.11.284⟩ Article dans une revue istex hal-01756643v1
Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range J.B. Rodriguez,Philippe Christol,A. Ouvrard,F. Chevrier,P. Grechet al. Electronics Letters, 2005, 41 (Issue: 6), pp.362- 363. ⟨10.1049/el:20058045⟩ Article dans une revue hal-00327783v1
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection J.B. Rodriguez,Philippe Christol,L. Cerutti,F. Chevrier,A. Joullié Journal of Crystal Growth, 2005, 274 (1-2), pp. 6-13. ⟨10.1016/j.jcrysgro.2004.09.088⟩ Article dans une revue istex hal-00327829v1
Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5µm spectral region J.B. Rodriguez,Philippe Christol,F. Chevrier,A. Joullié Physica E: Low-dimensional Systems and Nanostructures, 2005, 28, pp.128. ⟨10.1016/j.physe.2005.02.007⟩ Article dans une revue istex hal-00330470v1

Communication dans un congrès (205)

Growth and study of Sb-based Interband Cascade Laser on GaSb, GaAs and Si substrates Maëva Fagot,Daniel Andrés Díaz-Thomas,Julie Goutorbe,Yves Rouillard,Jean-Baptiste Rodriguezet al. 6th International workshop on opportunities and challenges in mid-infrared laser-based gas sensing (mirs6ens), Jan 2026, Wurtzburg, Germany Communication dans un congrès hal-05454923v1
Sb-based lasers epitaxially grown on Si(001) for midinfrared applications L. Cerutti,Daniel Andrés Díaz-Thomas,Maëva Fagot,Audrey Gilbert,Michele Paparellaet al. 2025 IEEE Photonics Conference (IPC), Nov 2025, Singapore, France. pp.1-1, ⟨10.1109/IPC65510.2025.11282355⟩ Communication dans un congrès hal-05454970v1
Type-II Interband Cascade Laser Monolithically Integrated on Si Substrate Maëva Fagot,Daniel Andrés Díaz-Thomas,Diba Ayache,Yves Rouillard,Aurore Vicetet al. Compound Semiconductor Week 2025, May 2025, Banff (Alberta), Canada Communication dans un congrès hal-05095424v1
Interband cascade lasers emitting below 3 µm grown on GaAs substrate Maëva Fagot,Daniel Andrés Díaz-Thomas,Yves Rouillard,Jean-Baptiste Rodriguez,Eric Tourniéet al. The 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France Communication dans un congrès hal-04997754v1
MBE growth of interband antimonide lasers on silicon L Cerutti,Maëva Fagot,Daniel Andrés Díaz-Thomas,Andres Remis,Audrey Gilbertet al. 39th North American Molecular Beam Epitaxy Conference (NAMBE 2025), Aug 2025, Santa Ana Pueblo-Albuquerque, NM, United States Communication dans un congrès hal-05454901v1
Reducing defect density in the epitaxy of III-Vs on Silicon substrates Audrey Gilbert,Eric Tournié,Gilles Patriarche,C. Cornet,Michel Ramondaet al. ICG2025, Jan 2025, LECCE, Italy Communication dans un congrès hal-04907295v1
III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals Sreejith Pallikkara Chandrasekharan,Audrey Gilbert,Chen Wei,Federico Panciera,Laurent Traverset al. 24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United States Communication dans un congrès hal-05204877v1
MBE growth of mid-IR interband cascade lasers Maëva Fagot,Daniel Andrés Díaz-Thomas,Audrey Gilbert,Yves Rouillard,Jean-Baptiste Rodriguezet al. The 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France Communication dans un congrès hal-04997749v1
Mid-IR GaSb-based lasers grown on Si platforms Eric Tournié,Michele Paparella,Andres Remis,D. Díaz-Thomas,Maeva Fagotet al. SPIE Photonics West 2025, SPIE, Jan 2025, San Francisco (CA, USA), United States Communication dans un congrès hal-04934677v1
STRUCTURE ATOMIQUE DES PAROIS D’INVERSION DANS LES COUCHES DE SEMICONDUCTEURS III-V EPITAXIEES SUR SUBSTRAT SILICIUM (100) Gilles Patriarche,Alexandre Beck,Laurent Pedesseau,Rozenn Bernard,Konstantinos Pantzaset al. 19ème colloque de la Société française des Microscopies, Jun 2025, Toulouse, France Communication dans un congrès hal-05205424v1
The direct epitaxial growth of III-Vs on Silicon substrate Audrey Gilbert,Eric Tournié,Gilles Patriarche,C. Cornet,Michel Ramondaet al. Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sete, France Communication dans un congrès hal-04737922v1
Electron Channeling Contrast Imaging for epi-layer structural defect characterization Audrey Gilbert,Ariane Meguekam Sado,Eric Tournié,Jean-Baptiste Rodriguez OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France Communication dans un congrès hal-04738266v1
Effect of a AlSb filter layer on threading dislocation density during GaSb-on-Si epitaxy Karl Graser,Audrey Gilbert,Steffen Richter,Jean-Baptiste Rodriguez,Eric Tourniéet al. DPG Frühjahrstagung (German Physical Society Spring Meeting), Mar 2024, Berlin, Germany Communication dans un congrès hal-04739768v1
Revisiting the epitaxy of III-Vs on group-IV substrates Audrey Gilbert,Gilles Patriarche,C. Cornet,Eric Tournié,Michel Ramondaet al. The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan Communication dans un congrès hal-04737783v1
New InGaAsSb based T2SL for MWIR detection Théo Sabardeil,E. Izquierdo,Gabin Grégoire,Bouzid Simozrag,Virginie Triniteet al. The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan Communication dans un congrès hal-04738225v1
Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks Audrey Gilbert,Karl Graser,Michel Ramonda,Achim Trampert,Eric Tourniéet al. The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan Communication dans un congrès hal-04737830v1
Single mode distributed feedback interband cascade lasers grown on Si substrate Daniel Andres Diaz Thomas,Maëva Fagot,Gad Ndemengoye-Kombila,Audrey Gilbert,Diba Ayacheet al. Novel In-Plane Semiconductor Lasers XXIII, Jan 2024, San Francisco, United States. pp.53, ⟨10.1117/12.3003764⟩ Communication dans un congrès hal-04996188v1
Mid-infrared Semiconductor Lasers Grown on group-IV Platforms Eric Tournié,Audrey Gilbert,Maeva Fagot,Milan Silvestre,Andres Remiset al. 36th International Conference on the Physics of Semiconductors (ICPS 2024), Jul 2024, Ottawa (Ontario), Canada Communication dans un congrès hal-04754234v1
Investigation of Intensity Noise in an Interband Cascade Laser Epitaxially Grown on Silicon and Designed for High-speed Applications Hyunah Kim,Pierre Didier,Sara Zaminga,Heming Huang,Daniel Andrés Díaz-Thomaset al. 2024 Conference on Lasers and Electro-Optics (CLEO 2024), May 2024, Charlotte, NC, United States Communication dans un congrès hal-04996211v1
Direct epitaxy of lasers on Si: challenges and solutions Maeva Fagot,Daniel Andrés Díaz-Thomas,Audrey Gilbert,Michel Ramonda,Yves Rouillardet al. OSEPI : Epitaxie des oxydes et des semiconducteurs, May 2024, Fréjus, France Communication dans un congrès hal-04739852v1
Interband cascade lasers on mismatched substrates emitting above 4 µm Maeva Fagot,Daniel Andrés Díaz-Thomas,Audrey Gilbert,Gad Kombila,Michel Ramondaet al. The 23rd International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2024, Matsue, Shimane, Japan Communication dans un congrès hal-04739914v1
Type-I and type-II interband cascade lasers emitting below 3 µm Maeva Fagot,Daniel Andrés Díaz-Thomas,Yves Rouillard,Jean-Baptiste Rodriguez,Eric Tourniéet al. Compound Semiconductor Week (CSW) 2024, Jun 2024, Lund, Sweden Communication dans un congrès hal-04739882v1
Understanding III-V/Si Heteroepitaxy: Experiments and Theory Charles Cornet,Audrey Gilbert,Sreejith Pallikkara Chandrasekharan,Divishth Gupta,Laurent Ceruttiet al. 8th European conference on crystal growth, Jul 2024, Warsaw, Poland Communication dans un congrès hal-04745129v1
Optimization of AlSb dislocation filter layer for GaSb-based quantum well lasers grown on Si(001) Karl Graser,Audrey Gilbert,Steffen Richter,Laurent Cerutti,Jean-Baptiste Rodriguezet al. EMRS Spring Meeting, May 2024, Strasbourg, France Communication dans un congrès hal-04739759v1
III-V/Si epitaxial growth and antiphase domains: a matter of symmetry C. Cornet,Sreejith Pallikkara Chandrasekharan,Audrey Gilbert,Divita Gupta,Philippe Vennéguèset al. OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France Communication dans un congrès hal-04738319v1
Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations Sreejith Pallikkara Chandrasekharan,D Gupta,Anne Ponchet,Gilles Patriarche,Jean-Baptiste Rodriguezet al. “Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France Communication dans un congrès hal-04224975v1
Epitaxial integration of mid-infrared III-V devices on group-IV substrates Eric Tournié,J.-B. Rodriguez,L. Cerutti,A. Gilbert,M. Silvestreet al. E-MRS ( European Materials Research Society ) Fall Meeting 2023, Symposium A, E-MRS, Sep 2023, Warsaw, Poland Communication dans un congrès hal-04245650v1
GaSb-based ICLs grown on GaSb, GaAs and Si substrates Maeva Fagot,Daniel Andrés Díaz-Thomas,Audrey Gilbert,Gad Kombila,Yves Rouillardet al. Mid-IR Optoelectronics: Materials and Devices XVI, Aug 2023, Norman, Oklahoma, United States Communication dans un congrès hal-04738303v1
Cascade lasers epitaxially grown on Silicon substrates Jean-Baptiste Rodriguez,Laurent Cerutti,A.N. Baranov,Audrey Gilbert,M Rio-Calvoet al. International Quantum Cascade Lasers School and Workshop, Aug 2022, Zurich - Ascona, Switzerland Communication dans un congrès hal-03771073v1
Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains. Audrey Gilbert,Jean-Baptiste Rodriguez,Marta Rio Calvo,Michel Ramonda,Laurent Ceruttiet al. 22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom Communication dans un congrès hal-03806222v1
Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms Michele Paparella,Laura Monge-Bartolomé,Jean-Baptiste Rodriguez,Laurent Cerutti,Marco Grandeet al. 2022 IEEE International Photonics Conference, Nov 2022, Vancouver, Canada. ⟨10.1109/IPC53466.2022.9975716⟩ Communication dans un congrès hal-03906450v1
Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronics Charles Cornet,Lipin Chen,Mekan Piriyev,Jean-Baptiste Rodriguez,Gabriel Logetet al. Webinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India Communication dans un congrès hal-03588366v1
Toward mid-infrared laser diodes on Silicon photonic integrated circuits Laura Monge-Bartolome,Marta Rio Calvo,Michaël Bahriz,Jean-Baptiste Rodriguez,Laurent Ceruttiet al. CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany Communication dans un congrès hal-03336233v1
Analysis of the coupling efficiency between monolithically integrated GaSb laser diodes and SiNx waveguides Michele Paparella,Laura Monge-Bartolome,Jean-Baptiste Rodriguez,Laurent Cerutti,Marco Grandeet al. 15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom Communication dans un congrès hal-03336700v1
MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON Eric Tournié,Marta Rio Calvo,Laura Monge-Bartolome,Zeineb Loghmari,Roland Teissieret al. 8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano), Aug 2021, Milano (on line), Italy Communication dans un congrès hal-03336686v1
Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si A. R. Ellis,I. P. Marko,T. D. Eales,Laurent Cerutti,Marta Rio Calvoet al. 15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom Communication dans un congrès hal-03336838v1
Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applications C. R. Fitch,G. W. Read,I. P. Marko,D. A. Duffy,Laurent Ceruttiet al. CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany Communication dans un congrès hal-03336249v1
Etched-facets Mid-IR laser on on-axis Silicon substrate for photonic integrated circuits Laura Monge-Bartolomé,Marta Rio Calvo,M. Bahriz,Jean-Baptiste Rodriguez,Laurent Ceruttiet al. Semiconductor and Integrated Optoelectronics Conference, Mar 2021, on line, United Kingdom Communication dans un congrès hal-03187613v1
Sb-based Mid-IR lasers grown by MBE on Silicon(001) Marta Rio Calvo,Jean-Baptiste Rodriguez,Laura Monge Bartolome,Laurent Cerutti,Zeineb Loghmariet al. 21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico Communication dans un congrès hal-03377236v1
Mid-infrared III-V semiconductor lasers grown on (001)Silicon substrates Eric Tournié,Laura Monge-Bartolome,Marta Rio Calvo,Daniel Andres Diaz Thomas,Zeineb Loghmariet al. 2021 IEEE Summer Topicals Meeting Series, Jul 2021, On line, United States Communication dans un congrès hal-03336669v1
Mid-infrared laser diodes grown on various on-axis III-V-on-Si templates Laura Monge-Bartolome,Tiphaine Cerba,Mickaël Martin,Marta Rio Calvo,Jean-Baptiste Rodriguezet al. Compound Semiconductor Week (CSW2021), May 2021, Stockholm (on line), Sweden Communication dans un congrès hal-03336846v1
Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001) Jean-Baptiste Rodriguez,M Rio Calvo,Charles Cornet,Laurent Cerutti,M Ramondaet al. 21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico Communication dans un congrès hal-03336876v1
Mid-IR lasers monolithically integrated on on-axis Silicon Eric Tournié,Marta Rio Calvo,Laura Monge-Bartolome,Zeineb Loghmari,Daniel Andres Diaz Thomaset al. CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany Communication dans un congrès hal-03336448v1
Is a substrate miscut really required for high quality III-V/Si monolithic integration? Charles Cornet,Simon Charbonnier,Ida Lucci,Lipin Chen,Antoine Létoublonet al. 21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico Communication dans un congrès hal-03402689v1
Mid-IR lasers epitaxially grown on on-axis (001) Silicon Eric Tournié,Marta Rio Calvo,Laura Monge-Bartolome,Zeineb Loghmari,Daniel A Diaz-Thomaset al. Novel In-Plane Semiconductor Lasers XX, Mar 2021, Online Only, United States. pp.35, ⟨10.1117/12.2576790⟩ Communication dans un congrès hal-03184742v1
Infrared unipolar XBn and XBp superlattice photodetectors Ulisses Zavala-Moran,Rodolphe Alchaar,Jean-Philippe Perez,J.B. Rodriguez,M. Bouschetet al. 9th International Symposium on Optronics in Defence & Security (OPTRO 2020), Feb 2020, PARIS, France Communication dans un congrès hal-03043516v1
Mid-IR lasers sources monolithically integrated on Si substrates Eric Tournié,Marta Rio Calvo,Laura Monge-Bartolome,Zeineb Loghmari,Daniel Andres Diaz Thomaset al. SPIE Photonex & Vacuum Expo Digital Forum, Emerging Applications in Silicon Photonics, SPIE, Oct 2020, on line, United Kingdom Communication dans un congrès hal-03184754v1
InAs/InAsSb T2SL band parameters determination via magnetoabsorption and k.p modeling Francesca Carosella,Alwïn Philippe,Gauthier Krizman,L. A de Vaulchier,J.B. Rodriguezet al. SPIE Photonics West 2020, Jan 2020, San Francisco, United States Communication dans un congrès hal-03043587v1
Transmission Electron Microscopy of (In,Ga)(Sb,Bi) epilayers and quantum wells Esperanza Luna,Olivier Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguezet al. 10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France Communication dans un congrès hal-02327205v1
InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation) Eric Tournié,Hoang Nguyen Van,Zeineb Loghmari,Laurent Cerutti,Jean-Baptiste Rodriguezet al. Quantum Sensing and Nano Electronics and Photonics XVI, Feb 2019, San Francisco, United States. pp.10926-41 Communication dans un congrès hal-02342613v1
Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates Jean-Baptiste Rodriguez,M. Rio Calvo,Laurent Cerutti,Laura Monge-Bartolomé,M. Bahrizet al. The 9th International Symposium on Photonics and Electronics Convergence, Nov 2019, Tokyo, Japan Communication dans un congrès hal-02383950v1
Study of In incorporation into GaSbBi alloys Olivier Delorme,Laurent Cerutti,Esperanza Luna,Achim Trampert,Eric Tourniéet al. 20th European Workshop on Molecular Beam Epitaxy, 2019, Lenggries, Germany Communication dans un congrès hal-02327229v1
Molecular-beam epitaxy of GaInSbBi alloys and QWs Olivier Delorme,Laurent Cerutti,Esperanza Luna,Achim Trampert,Eric Tourniéet al. 10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France Communication dans un congrès hal-02327216v1
Mid-IR lasers epitaxially grown on silicon E. Tournié,J.B. Rodriguez,Laurent Cerutti,M. Rio Calvo,Laura Monge-Bartoloméet al. GDR nanoTERAMIR, Jun 2019, Agay, France Communication dans un congrès hal-02342614v1
Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate Q. Durlin,J.P. Perez,L. Cerutti,J.B. Rodriguez,T. Cerbaet al. QSIP2018, Jun 2018, Stockholm, Sweden. pp.39-43, ⟨10.1016/j.infrared.2018.10.006⟩ Communication dans un congrès hal-01947798v1
A universal mechanism to describe III-V epitaxy on Si Ida Lucci,Simon Charbonnier,Laurent Pedesseau,Maxime Vallet,Laurent Ceruttiet al. 20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany Communication dans un congrès hal-02048639v1
Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation) Eric Tournié,Laurent Cerutti,Jean-Baptiste Rodriguez,Jean-Philippe Perez,Philippe Christolet al. Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11 Communication dans un congrès hal-02342612v1
Characterization and performance analysis of InAs/GaSb T2SL photodetector for LWIR/VLWIR spectral domain Rodolphe Alchaar,J.B. Rodriguez,Linda Hoglund,Philippe Christol Infrared Colloquium, Mar 2019, Freiburg, Germany Communication dans un congrès hal-03043558v1
Epitaxial Integration of GaSb-based mid-IR devices on Silicon E. Tournié,Jean-Baptiste Rodriguez,L Cerutti,Roland Teissier,Alexei Baranov Light Conference 2019, Jul 2019, Changchun, China Communication dans un congrès hal-02342611v1
Antimonide-based optoelectronic devices epitaxially grown on Silicon E. Tournié,L. Cerutti,J.-B. Rodriguez,J.-P. Perez,A. N. Baranovet al. International nano-optoelectronics workshop (iNOW 2018), 2018, Berkeley, United States Communication dans un congrès hal-02078268v1
Electrical and electro-optical characterizations of LWIR/VLWIR T2SL barrier photodetectors Rodolphe Alchaar,J.-B. Rodriguez,R. Rossignol,L. Höglund,E. Costardet al. Workshop Infrared detection for space applications, 2018, Toulouse, France Communication dans un congrès hal-02082999v1
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET Tiphaine Cerba,Mickaël Martin,Jeremy Moeyaert,Reynald Alcotte,Bassem Salemet al. 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan Communication dans un congrès hal-01954906v1
(114) GaP surface texturation on Si for water splitting Ida Lucci,Simon Charbonnier,Maxime Vallet,Pascal Turban,Yoan Légeret al. EMRS Spring meeting 2018, Jun 2018, Strasbourg, France Communication dans un congrès hal-01708047v1
GaP Template on Si for Solar Water Splitting: surface energy engineering Laurent Pedesseau,Ida Lucci,Simon Charbonnier,Maxime Vallet,Pascal Turbanet al. nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain Communication dans un congrès hal-01909068v1
A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy Ida Lucci,Simon Charbonnier,Laurent Pedesseau,Maxime Vallet,Laurent Ceruttiet al. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S) Communication dans un congrès hal-01910554v1
Quantum cascade lasers grown on silicon A. N. Baranov,H. Nguyen-Van,Z. Loghmari,L. Cerutti,J.-B. Rodriguezet al. 18th Int. Conf. on Laser Optics, 2018, St Petersburg, Russia Communication dans un congrès hal-02078298v1
Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells O. Delorme,L. Cerutti,R. Kudrawiec,E. Luna,J. Kopaczeket al. 20th International Conference on Molecular-Beam Epitaxy (MBE 2018), 2018, Shanghai, China Communication dans un congrès hal-02078204v1
InAs/GaSb T2SL photodetector operating in the VLWIR spectral domain Rodolphe Alchaar,J.B. Rodriguez,Linda Höglund,S. Naureen,Eric Costardet al. International Conference on Space Optics (ICSO2018), Oct 2018, Crète, Greece Communication dans un congrès hal-02056850v1
Material development for longwave and very-longwave InAs/GaSb superlattice barrier structures infrared photodetectors J.B. Rodriguez,Rodolphe Alchaar,Rémi Rossignol,Linda Höglund,Carl Asplundet al. Quantum Structure Infrared Photodetector (QSIP), Jun 2018, Stockholm, Sweden Communication dans un congrès hal-02056846v1
Sb-based IR Detector and Emitter Materials E. Tournié,A. N. Baranov,L. Cerutti,J.-P. Perez,J.-B. Rodriguez Sb-based IR Detector and Emitter Materials, CSWeek 2018, 2018, Boston, United States Communication dans un congrès hal-02078599v1
Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications Ida Lucci,Simon Charbonnier,Maxime Vallet,Pascal Turban,Yoan Légeret al. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S) Communication dans un congrès hal-01910556v1
Development of Electron Beam Induced Current for diffusion length determination of VLWIR HgCdTe and MWIR T2SL based photodetectors A. Yèche,F. Boulard,C. Cervera,J.P. Perez,J.B. Rodriguezet al. QSIP2018, Jun 2018, Stockholm, Sweden. pp.170-176 Communication dans un congrès hal-01962904v1
A general III-V/Si growth process description Ida Lucci,Simon Charbonnier,Laurent Pedesseau,Maxime Vallet,Laurent Ceruttiet al. European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France Communication dans un congrès hal-01910535v1
III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation Ida Lucci,Simon Charbonnier,Laurent Pedesseau,Maxime Vallet,Laurent Ceruttiet al. 34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France Communication dans un congrès hal-01910543v1
Mid-IR Optoelectronic devices epitaxially grown on Silicon E. Tournié,A. N. Baranov,L. Cerutti,J.-B. Rodriguez,R. Teissier Mid-IR Optoelectronic devices epitaxially grown on Silicon, CLEO 2018, 2018, San Jose, United States Communication dans un congrès hal-02078610v1
Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes O. Delorme,L. Cerutti,E. Luna,R. Kudrawiec,J. Kopaczeket al. 14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018, Flagstaff, United States Communication dans un congrès hal-02078153v1
On the origin of defects during III-Sb epitaxy on Si(001) A. Trampert,M. Niehle,H. Drube,J.-B. Rodriguez,L. Ceruttiet al. 2018 E-MRS Spring meeting, Symposium V, 2018, Strasbourg, France Communication dans un congrès hal-02078642v1
Very long wavelength type-II InAs/GaSb superlattice infrared detectors Linda Höglund,Jean-Baptiste Rodriguez,Shagufta Naureen,Ruslan Ivanov,Carl Asplundet al. Infrared Technology and Applications XLIV, Apr 2018, Orlando, United States. ⟨10.1117/12.2292977⟩ Communication dans un congrès hal-01796388v1
Mid-Infrared 2.7 µm GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure Igor Marko,Olivier Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguezet al. 14th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2018, Flagstaff, United States Communication dans un congrès hal-02327248v1
GaSb-based lasers in the telecom wavelength range monolithically integrated on Si E. Tournié,L. Cerutti,J.-B. Rodriguez,A. Castellano,A. Garreauet al. ECOC 2018, Workshop on Integrated Photonics, 2018, Rome, Italy Communication dans un congrès hal-02078228v1
Design and fabrication of Ga-free InAs/InAsSb superlattice XBn photodetector for high operating temperature in the midwave infrared domain Quentin Durlin,Ulisses Zavala-Moran,J.P. Perez,J.B. Rodriguez,Philippe Christol GDR workshop NanoTeraMIR, May 2018, Montpellier, France Communication dans un congrès hal-02057385v1
Electrical and elctro-optical characterization of LWIR/VLWIR T2SL barrier photon-detector Rodolphe Alchaar,J.B. Rodriguez,Rémi Rossignol,Linda Höglund,Philippe Christol ESA and CNES whorkshop on IR detector for space applications, Jul 2018, Toulouse, France Communication dans un congrès hal-02056842v1
Antimonide-based XBn and XBp superlattices infrared barrier photodetectors Rodolphe Alchaar,Ulisses Zavala-Moran,Hocine Ait-Kaci,J.B. Rodriguez,J.P. Perezet al. International Conference on the Physics od semiconductors, Jul 2018, Montpellier, France Communication dans un congrès hal-02056840v1
Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection L. Höglund,J.B. Rodriguez,R. Marcks von Würtemberg,S. Naureen,R. Ivanovet al. QSIP2018, Jun 2018, Stockholm, Sweden. pp.158-163, ⟨10.1016/j.infrared.2018.10.036⟩ Communication dans un congrès hal-01962902v1
Infrared InAs/GaSb type-II superlattice XBp barrier photodetector for space applications Rodolphe Alchaar,J.B. Rodriguez,Remi Rossignol,Linda Höglund,Philippe Christol GDR Workshop NanoTeraMIR, May 2018, Montpellier, France Communication dans un congrès hal-02057389v1
MTF and FPN measurements to evaluate midwave infrared T2SL focal plane arrays Jean Nghiem,Julien Jaeck,Edouard Giard,Marcel Caes,Jean-Baptiste Rodriguezet al. QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, San Francisco, United States. pp.UNSP 101111D, ⟨10.1117/12.2251160⟩ Communication dans un congrès hal-01628443v1
GaSb-based lasers epitaxially grown on Si E. Tournié,L. Cerutti,J.-B. Rodriguez,A. Castellano,G. Narcyet al. E-MRS Fall meeting, Symposium, 2017, Warsaw, Poland Communication dans un congrès hal-01905141v1
Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications T. Cerba,M. Martin,J. Moeyaert,S. David,J.-L. Rouvièreet al. E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland Communication dans un congrès hal-01905730v1
Metamorphic III-Sb lasers epitaxially grown on Si substrates E. Tournié,L. Cerutti,J.-B. Rodriguez,G. Narcy,A. Castellanoet al. International School on Epitaxial Technologies of Novel materials and Nanostructures, 2017, St. Petersburg, Russia Communication dans un congrès hal-01905208v1
High Bi-content GaSbBi alloys for mid-IR applications O. Delorme,L. Cerutti,E. Tournié,J.-B. Rodriguez CSWeek 2017, 2017, Berlin, Germany Communication dans un congrès hal-01905735v1
Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications E. Luna,A. Trampert,O. Delorme,L. Cerutti,E. Tourniéet al. 8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany Communication dans un congrès hal-01905702v1
Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications Tiphaine Cerba,Mickaël Martin,Jeremy Moeyaert,Sylvain David,Jean-Luc Rouvièreet al. 2017 EMRS Fall Meeting, 2017, Warsaw, Poland Communication dans un congrès hal-01891383v1
InAs/InAsSb superlattice structure tailored for detection of the full midwave infrared spectral domain Quentin Durlin,Jean-Philippe Perez,Remi Rossignol,Jean-Baptiste Rodriguez,Laurent Ceruttiet al. QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, San Francisco, United States. pp.UNSP 1011112, ⟨10.1117/12.2250908⟩ Communication dans un congrès hal-01628434v1
Plasmonic bio-sensing based on highly doped semiconductors María-José Milla Rodrigo,Franziska Barho,Fernando Gonzalez-Posada Flores,Laurent Cerutti,Jean-Baptiste Rodriguezet al. Optics + Photonics (SPIE), 2017, San Diego, United States Communication dans un congrès hal-01905149v1
III-V/Si 3D crystal growth: a thermodynamic description Ida Lucci,Simon Charbonnier,Maxime Vallet,Tony Rohel,Rozenn Bernardet al. Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany Communication dans un congrès hal-01708282v1
GaSbBi/GaSb quantum well laser diodes Olivier Delorme,Laurent Cerutti,Esperanza Luna,Achim Trampert,Eric Tourniéet al. 8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany Communication dans un congrès hal-02327190v1
Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition T. Cerba,M. Martin,J. Moeyaert,S. David,J.-L. Rouvièreet al. 17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France Communication dans un congrès hal-01891389v1
GaSbBi alloys for mid-infrared optoelectronics O. Delorme,L. Cerutti,E. Tournié,J.-B. Rodriguez Freiburg Infrared Colloqium, 2017, Freiburg, Germany Communication dans un congrès hal-01905746v1
Metamorphic III-Sb lasers epitaxially grown on Silicon L. Cerutti,J.-B. Rodriguez,A. Castellano,K. Madiomanana,G. Narcyet al. 19th European Workshop on Molecular-Beam Epitaxy, (Euro-MBE 2017), 2017, St. Petersburg, Russia Communication dans un congrès hal-01905184v1
ANTIMONIDE-BASED SUPERLATTICE NANOSTRUCTURES TO DESIGN LONGWAVE INFRARED BARRIER DETECTORS Marie Delmas,Philippe Christol,Rémi Rossignol,Jean-Baptiste Rodriguez Nanomeeting-2017, 2017, Minsk, Belarus. ⟨10.1142/9789813224537_0108⟩ Communication dans un congrès hal-01779008v1
Design and modelling of longwave infrared InAs/GaSb superlattice barrier detectors M. Delmas,R. Rossignol,J.-B. Rodriguez,Philippe Christol,D. Huffaker 44th International Symposium on Compound Semiconductors (ISCS), 2017, Berlin, Germany Communication dans un congrès hal-01905807v1
Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures Remi Rossignol,Jean-Baptiste Rodriguez,Quentin Durlin,H. Ait-Kaci,Jean-Philippe Perezet al. Photonic West Conference, Feb 2017, San Francisco, United States. ⟨10.1117/12.2251153⟩ Communication dans un congrès hal-01628430v1
Performance analysis of MWIR InAs/GaSb photodiode M. Delmas,R. Rossignol,J.-B. Rodriguez,Philippe Christol,D. Huffaker Infrared Colloquium, 2017, Freiburg, Germany Communication dans un congrès hal-01905818v1
Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys Olivier Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez 13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2016, Beijing, China Communication dans un congrès hal-02327267v1
Brewster mode : optical monitoring of the semiconductor doping level Maria Jose Milla Rodrigo,Thierry Taliercio,Laurent Cerutti,Fernando Gonzalez-Posada Flores,Franziska Barhoet al. Photonic West OPTO (SPIE), 2016, San Francisco, United States Communication dans un congrès hal-01903684v1
GaSb lasers grown on Silicon substrate for telecom application A. Castellano,L. Cerutti,G. Narcy,J.-B. Rodriguez,F. Lelargeet al. 19th Conference on Molecular Beam epitaxy (MBE2014), 2016, Montpellier, France Communication dans un congrès hal-01903740v1
GaSb grown by molecular beam epitaxy on silicon substrates J.-B. Rodriguez,L. Cerutti,G. Patriarche,L. Largeau,K. Madiomananaet al. 19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France Communication dans un congrès hal-01903638v1
Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructures María-José Milla Rodrigo,Franziska Barho,Fernando Gonzalez-Posada Flores,Laurent Cerutti,Jean-Baptiste Rodriguezet al. Photonic West OPTO (SPIE), 2016, San Francisco, United States Communication dans un congrès hal-01903606v1
On the origin of threading dislocations during III-Sb epitaxy on Si(001) M. Niehle,J.-B. Rodriguez,L. Cerutti,K. Madiomanana,E. Tourniéet al. 19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France Communication dans un congrès hal-01903706v1
GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range A. Castellano,L. Cerutti,G. Narcy,J.-B. Rodriguez,A. Garreauet al. 43rd Int. Symp. on Compound Semiconductors (ISCS 2016), 2016, Toyama, Japan Communication dans un congrès hal-01903723v1
Radiometric Characterization of Type-II InAs/GaSb Superlattice (T2SL) Midwave Infrared Photodetectors and Focal Plane Arrays J Nghiem,E Giard,M. Delmas,J.B. Rodriguez,Philippe Christolet al. ICSOS 2016, Oct 2016, Biarritz, France Communication dans un congrès hal-01408899v1
3.8 μm Heterogeneously Integrated III-V on Silicon Micro-Spectrometer A. Vasiliev,M. Muneeb,A. Ruocco,A. Malik,H. Chenet al. 18th European Conference on Integrated Optics, 2016, Warsaw, Poland Communication dans un congrès hal-01903732v1
GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range A. Castellano,L. Cerutti,G. Narcy,J.-B. Rodriguez,F. Lelargeet al. 19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France Communication dans un congrès hal-01903690v1
Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys Olivier Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez 19th International Conference on Molecular Beam Epitaxy, 2016, Montpellier, France Communication dans un congrès hal-02327261v1
Observation of Fano resonances in highly doped semiconductor plasmonic resonators T. Taliercio,Vilianne N’tsame,L. Cerutti,J.-B. Rodriguez,Franziska Barhoet al. SPIE NanoScience + Engineering, 2015, San Diego, United States Communication dans un congrès hal-01903562v1
InAs/GaSb NANOSTRUCTURE ENGINEERING TO DESIGN TYPE-II SUPERLATTICE MIDWAVE INFRARED PHOTODIODE Philippe Christol,Marie Delmas,Jean-Baptiste Rodriguez Nanomeeting – 2015, 2015, Minsk, Belarus. ⟨10.1142/9789814696524_0132⟩ Communication dans un congrès hal-01779026v1
GaInSb/AlInSb coupled QWs on GaSb for telecom laser L. Cerutti,A. Castellano,K. Madiomanana,J.-B. Rodriguez,F. Lelargeet al. SPIE Photonics West, Opto-2015, Novel In-Plane Semiconductor Lasers XIV, 2015, San Francisco, United States Communication dans un congrès hal-01903574v1
Highly doped semiconductor plasmonics for mid-IR applications T. Taliercio,V. N’tsame Guilengui,L. Cerutti,J.-B. Rodriguez,E. Tournié 7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel Communication dans un congrès hal-01903569v1
Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction M. Delmas,J. B. Rodriguez,R. Taalat,Leszek Konczewicz,Wilfried Desratet al. 8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP), Jun 2014, Santa-Fe, United States. pp.76-80, ⟨10.1016/j.infrared.2014.09.036⟩ Communication dans un congrès hal-01216731v1
Flexibility properties of type-II InAs/GaSb SL to design MWIR pin photodiodes Philippe Christol,M. Delmas,Jean-Baptiste Rodriguez,E. Giard,I. Ribet-Mohamedet al. SPIE OPTO, 2015, San Francisco, United States. ⟨10.1117/12.2076569⟩ Communication dans un congrès hal-01756182v1
Influence of the InAs/GaSb superlattice period composition on the electro-optical performances of T2SL infrared photodiode Philippe Christol,M. Delmas,R. Rossignol,J.-B. Rodriguez Influence of the InAs/GaSb superlattice period composition on the electro-optical performances of T2SL infrared photodiode, 2015, Valence, Spain Communication dans un congrès hal-01903523v1
Terahertz studies of 2D and 3D topological transitions M. Marcinkiewicz,Frederic Teppe,Christophe Consejo,Nina Diakonova,Wilfried Desratet al. 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩ Communication dans un congrès hal-01249953v2
1.55 µm GaSb-based lasers monolithically grown on Si substrates E. Tournié,L. Cerutti,A. Castellano,K. Madiomanana,J.-B. Rodriguez 18th Conference on Molecular Beam epitaxy (MBE2014), 2014, Flagstaff, United States Communication dans un congrès hal-01903137v1
Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains Philippe Christol,Jean-Baptiste Rodriguez International Conference on Space Optics 2014, Oct 2014, Tenerife, Spain. ⟨10.1117/12.2304264⟩ Communication dans un congrès hal-01786505v1
TCAD modeling and characterization of InAs/GaSb superlattice photodiode device for MWIR detection M. Delmas,J.-B. Rodriguez,Philippe Christol,J. Imbert,V. Trinitéet al. 12th Int. Mid-IR Optoelectronics-Materials & Devices Conf (MIOMD XII), 2014, Montpellier, France Communication dans un congrès hal-01903206v1
Modeling and measurement of optical properties in InAs/GaSb superlattice structures J. Imbert,V. Trinité,S. Derelle,M. Carras,R. Haidaret al. Quantum Structure Infrared Photodetector (QSIP) Conference, 2014, Santa-Fe, United States Communication dans un congrès hal-01903228v1
Mid-IR heterogeneous silicon photonics G. Roelkens,U. Dave,A. Gassenq,N. Hattasan,C. Huet al. SPIE Photonics West 2014, 2014, San Francisco, United States Communication dans un congrès hal-01903127v1
GaSb-based active zones for laser emission at 1.55µm A. Castellano,L. Cerutti,J.-B. Rodriguez,K. Madiomanana,F. Lelargeet al. International Symposium on Compound Semiconductors (ISCS), 2014, Montpellier, France Communication dans un congrès hal-01903487v1
Influence of the InAs/GaSb thickness ratio on the radiometric performances of MWIR InAs/GaSb superlattice pin photodiodes E. Giard,M. Delmas,J.-B. Rodriguez,Philippe Christol,I. Ribet-Mohamed Quantum Structure Infrared Photodetector (QSIP) Conference, 2014, Santa-Fe, United States Communication dans un congrès hal-01903235v1
Dopant-free superlattice MWIR pin photodiode Philippe Christol,M. Delmas,J.-B. Rodriguez,Leszek Konczewicz,E. Giardet al. Quantum Structure Infrared Photodetector (QSIP) Conference, 2014, Santa-Fe, United States Communication dans un congrès hal-01903220v1
Comparison of the electro-optical performance of MWIR InAs/GaSb superlattice pin photodiodes and FPA with asymmetrical designs E. Giard,R. Taalat,M. Delmas,Jean-Baptiste Rodriguez,Philippe Christolet al. SPIE “Infrared Technology and Applications XL", 2014, Baltimore, United States Communication dans un congrès hal-01903185v1
Épitaxie par jets moléculaires de semi-conducteurs à base d’antimoine sur substrat Si pour la photonique J.-B. Rodriguez,K. Madiomanana,A. Castellano,E. Tournié GDR PULSE, Toulouse, 2014, Toulouse, France Communication dans un congrès hal-01903148v1
Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes E. Giard,I. Ribet-Mohamed,M. Delmas,J.B. Rodriguez,Philippe Christol QSIP, Jun 2014, Santa-Fe, United States Communication dans un congrès hal-01070571v1
Intégration épitaxiale de lasers à base de GaSb sur substrat Si pour émission du proche au moyen IR E. Tournié,L. Cerutti,A. Castellano,K. Madiomanana,J.-B. Rodriguez GDR Ondes, 2014, Orsay, France Communication dans un congrès hal-01903151v1
GaSb-based grating regrowth for mid-infrared optoelectronic devices L. Cerutti,J.-B. Rodriguez,Q. Gaimard,V. N’tsame-Guilengui,T. Taliercioet al. 18th IC-MBE, 2014, Flagstaff, United States Communication dans un congrès hal-01805131v1
Analysis of electrical and electro-optical characteristics of midwave infrared InAs/GaSb SL pin photodiodes M. Delmas,R. Taalat,Jean-Baptiste Rodriguez,Philippe Christol,E. Giardet al. SPIE OPTO, 2014, San Francisco, United States. ⟨10.1117/12.2039200⟩ Communication dans un congrès hal-01756718v1
Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs Edouard Giard,Rachid Taalat,Marie Delmas,Jean-Baptiste Rodriguez,Philippe Christolet al. SPIE Defense + Security, Apr 2014, Baltimore, United States. ⟨10.1117/12.2050426⟩ Communication dans un congrès hal-01786508v1
Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applications V. Ntsame Guilengui,L. Cerutti,J.-B. Rodriguez,E. Tournié,T. Taliercio Photonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain Communication dans un congrès hal-01875563v1
InAs/GaSb superlattice pin photodiode: choice of the SL period to enhance the temperature operation in the MWIR domain Philippe Christol,R. Taalat,M. Delmas,Jean-Baptiste Rodriguez,E. Giardet al. SPIE OPTO, 2013, San Francisco, United States. ⟨10.1117/12.2001765⟩ Communication dans un congrès hal-01756716v1
Antimonides, a key-enabling-technology for integrated infrared photonics E. Tournié,L. Cerutti,K. Madiomanana,J.-R. Reboul,J.-B. Rodriguez Chinese-German Workshop on “Nano-X Fundmental instruments and research on Novel Nanodevices” 4, 2013, Suzhou, China Communication dans un congrès hal-01864297v1
Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy E. Tournié,L. Cerutti,G. Boissier,Y. Rouillard,A. N. Baranovet al. 17th Euro-Molecular Beam Epitaxy (Euro-MBE), 2013, Levi, Finland Communication dans un congrès hal-01797215v1
GaSb-based all-semiconductor mid-IR plasmonics T. Taliercio,V. Ntsame Guilengui,L. Cerutti,J.-B. Rodriguez,E. Tournié Photonics West (SPIE), 2013, San Francisco, United States Communication dans un congrès hal-01864230v1
Integrated Thin-Film GaSb-based Fabry-Perot Lasers: Towards a Fully Integrated Spectrometer on a SOI Waveguide Circuit N. Hattasan,A. Gassenq,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tourniéet al. SPIE: Quantum Sensing and Nanophotonic Devices, 2013, San Francisco, United States. ⟨10.1117/12.2000707⟩ Communication dans un congrès hal-01798001v1
All-semiconductor plasmonics for mid-IR applications T. Taliercio,V. Ntsame Guilengui,L. Cerutti,J.-B. Rodriguez,E. Tournié Optics + Photonics (SPIE), 2013, San Diego, United States Communication dans un congrès hal-01864287v1
Influence of the GaSb layer thickness on the properties of InAs/GaSb SL photodiodes J.-B. Rodriguez,R. Taalat,M. Delmas,Y. Laaroussi,Philippe Christol 40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 2013, Kobe, Japan Communication dans un congrès hal-01874659v1
Metal-free plasmonics for infrared applications T. Taliercio,V. Ntsame Guilengui,L. Cerutti,J.-B. Rodriguez,E. Tournié 7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia Communication dans un congrès hal-01864257v1
InAs/GaSb superlattice pin photodiode : choice of the SL period to enhance the temperature operation in the MWIR domain Philippe Christol,R. Taalat,M. Delmas,J.-B. Rodriguez,E. Giardet al. SPIE “Quantum Sensing and Nanophotonic Devices X”, 2013, San Francisco, United States Communication dans un congrès hal-01864247v1
Sb-based compound lasers on silicon substrates Jean-Baptiste Rodriguez,L. Cerutti,K. Madiomanana,J. R. Reboul,Y. Rouillardet al. Silicon & Photonics, 2013, Rennes, France Communication dans un congrès hal-01796958v1
Defects study in IR photodetectors by DLTS L. Rubaldo,A. Brunner,N. Péré-Laperne,D. Bauza,Philippe Christolet al. II-VI workshop, 2013, Chicago, United States Communication dans un congrès hal-01875555v1
Noise measurements for the performance analysis of infrared photodetectors E. Giard,B.-L. Nghiem,M. Caes,M. Tauvy,I. Ribet-Mohamedet al. 2013 International Conference on Noise and Fluctuations (ICNF), Jun 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578996⟩ Communication dans un congrès hal-01786509v1
InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications N. Hattasan,A. Gassenq,L. Cerutti,J.-B. Rodriguez,E. Tourniéet al. 2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland Communication dans un congrès hal-01861067v1
Comparison of the electro-optical performances of symmetrical and asymmetrical MWIR InAs/GaSb superlattice pin photodiodes Isabelle Ribet-Mohamed,M. Tauvy,Rachid Taalat,Cyril Cervera,Jean-Baptiste Rodriguezet al. SPIE OPTO, Feb 2012, San Francisco, United States. ⟨10.1117/12.914455⟩ Communication dans un congrès hal-01786521v1
Experimental study of surface plasmons polaritons on arrays of doped and un-doped semiconductors V. Ntsame Guilengui,L. Cerutti,J.-B. Rodriguez,T. Taliercio 3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics (META2012), 2012, Paris, France Communication dans un congrès hal-01862196v1
An overview of the InAs/GaSb infrared detector technology Philippe Christol,R. Taalat,C. Cervera,J.-B. Rodriguez,I. Ribet-Mohamed 5th International Symposium on Optronics in Defence and Security (OPTRO 2012), 2012, Paris, France Communication dans un congrès hal-01861116v1
CW operation at RT of Sb-based laser monolithically grown on Si substrate J.-B. Rodriguez,L. Cerutti,J. R. Reboul,E. Tournié SPIE “Quantum Sensing and Nanophotonic Devices IX", 2012, San Francisco, United States Communication dans un congrès hal-01861107v1
Highly doped semiconductors for mid-infrared plasmonics V. Ntsame Guilengui,T. Taliercio,L. Cerutti,J.-B. Rodriguez,E. Tournié 36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France Communication dans un congrès hal-01862980v1
Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates J.-B. Rodriguez,L. Cerutti,J. R. Reboul,E. Tournié 11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States Communication dans un congrès hal-01861063v1
Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applications E. Ryckeboer,A. Gassenq,N. Hattasan,B. Kuyken,L. Ceruttiet al. IEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States Communication dans un congrès hal-01862205v1
Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors T. Taliercio,V. Ntsame Guilengui,L. Cerutti,J.-B. Rodriguez,E. Tournié 11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States Communication dans un congrès hal-01861443v1
Analysis of electrical and phototelectrical characterizations of InAs/GaSbSuperlattice MWIR photodiodes R. Taalat,I. Ribet-Mohamed,C. Cervera,J.-B. Rodriguez,Philippe Christol Quantum Structure Infrared Photodetector (QSIP), Jun 2012, Cargèse, France Communication dans un congrès hal-01862994v1
Optimization of InAs/GaSb superlattice pin photodiode design for the high temperature operation in the midwave infrared range Philippe Christol,R. Taalat,C. Maingue-Wilson,C. Cervera,H. Aït-Kaciet al. SPIE OPTO, 2012, San Francisco, United States. ⟨10.1117/12.905976⟩ Communication dans un congrès hal-01756714v1
Impact of nucleation conditions on the properties of GaSb-based heterostructures grown by MBE on GaAs substrates K. Madiomanana,J.-B. Rodriguez,L. Cerutti,E. Tournié 17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan Communication dans un congrès hal-01862182v1
Current developments in MBE growth of highly mismatched materials J.-B. Rodriguez,L. Cerutti,J. R. Reboul,E. Tournié European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d’Huez, France Communication dans un congrès hal-01831686v1
Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications N. Hattasan,Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié,Dries van Thourhoutet al. Conference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. pp.79451K, ⟨10.1117/12.874659⟩ Communication dans un congrès hal-00641358v1
Dark current and noise characterization to evaluate the performance of InAs/GaSb SL photodiodes operating in the mid-wave infrared domain C. Cervera,I. Ribet-Mohamed,R. Taalat,J.-P. Perez,Philippe Christolet al. II-VI Workshop, Chicago, 2011, Chicago, United States Communication dans un congrès hal-01858347v1
Metamorphic 6.3 Å GaInSb templates grown on GaAs substrates for mid-IR lasers Laurent Cerutti,Jean-Baptiste Rodriguez,Eric Tournié European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d'Huez, France Communication dans un congrès hal-01858325v1
Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation Philippe Christol,Cyril Cervera,Jean-Baptiste Rodriguez,K. Jaworowicz,Isabelle Ribet-Mohamed Conference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, United States. pp.79451H, ⟨10.1117/12.869631⟩ Communication dans un congrès hal-00641343v1
Noise performance analysis of MWIR InAs/GaSb superlattice pin photodiodes Isabelle Ribet-Mohamed,K. Jaworowicz,David Tayibi,Cyril Cervera,Rachid Taalatet al. Conference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, United States. pp.80120Z, ⟨10.1117/12.883794⟩ Communication dans un congrès hal-00641342v1
Performances actuelles et perspectives des photodétecteurs à super réseaux InAs/GaSb C. Cervera,R. Taalat,J.-P. Perez,J.-B. Rodriguez,Philippe Christolet al. Journée Détecteurs Infrarouges, SAGEM, 2011, Paris, France Communication dans un congrès hal-01860430v1
Sb-based laser grown on Si substrate operating under cw above room temperature Laurent Cerutti,Jean-Baptiste Rodriguez,J. R. Reboul,Eric Tournié 38th Int. Symp. on Compound Semiconductors 2011, (ISCS2011), 2011, Berlin, Germany Communication dans un congrès hal-01858339v1
Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode Cyril Cervera,Rachid Taalat,Philippe Christol,Jean-Baptiste Rodriguez,K. Jaworowiczet al. Conference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, United States. pp.801213, ⟨10.1117/12.882133⟩ Communication dans un congrès hal-00641337v1
Photodétecteur à super réseaux InAs/GaSb pour une nouvelle génération de détecteur infrarouge R. Taalat,C. Cervera,J.-P. Perez,J.-B. Rodriguez,Philippe Christolet al. Journée Nationale du Réseau Doctoral en Microélectronique (JNRDM), Paris, 2011, Paris, France Communication dans un congrès hal-01860438v1
Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation. Philippe Christol,C. Cervera,R. Chaghi,H. Ait-Kaci,J. B. Rodriguezet al. Conference On Quantum Sensing and Nanophotonic Devices VII, Jan 2010, San Francisco (CA), France. pp.76081U Communication dans un congrès hal-00543643v1
Molecular beam epitaxy of InSb involving hydrogene plasma substrate cleaning J.-P. Perez,J.-B. Rodriguez,R. Chaghi,Philippe Christol,F. Fagnouet al. 16th International Conference on Molecular Beam Epitaxy, 2010, Berlin, Germany Communication dans un congrès hal-01830953v1
Sb-based laser sources grown by molecular beam epitaxy on silicon substrates J.-B. Rodriguez,L. Cerutti,P. Grech,G. Boissier,G. Narcyet al. Photonics West 2010, Novel In-Plane Semiconductor Lasers IX, 2010, San Francisco, United States Communication dans un congrès hal-01830461v1
Lasers moyen-infrarouge à base d’antimoine réalisés sur substrat Silicium J.-B. Rodriguez,J. R. Reboul,L. Cerutti,E. Tournié 13ème Journées Nano, Micro et Optoélectronique (JNMO 2010), 2010, Les Issambres, France Communication dans un congrès hal-01831640v1
Propriétés électriques de photodiodes infrarouges à superréseaux InAs/GaSb C. Cervera,J.-B. Rodriguez,Philippe Christol,L. Konczewicz,Sylvie Contreraset al. XIIIème Journées Nationales Microélectronique Optoélectronique (JNMO), 2010, Les Issambres, France Communication dans un congrès hal-01831153v1
Dark current and noise measurements in InAs/GaSb superlattice detectors Philippe Christol,Katarzyna Jaworowicz,Cyril Cervera,Olivier Gravrand,Jean-Baptiste Rodriguezet al. OPTO, 2010, San Francisco, United States. ⟨10.1117/12.840016⟩ Communication dans un congrès hal-01756712v1
Improvement of MWIR SL Photodiode using an asymmetrical period design C. Cervera,J.-B. Rodriguez,H. Aït-Kaci,H. Montes,Philippe Christolet al. 10th Int. Mid-IR Optoelectronics-Materials & Devices Conference (MIOMD X), 2010, Shanghai, China Communication dans un congrès hal-01830942v1
GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature L. Cerutti,J.-B. Rodriguez,E. Tournié 22nd Int. Conf. on InP and Related Materials (IPRM 2010), 2010, Takamatsu, Japan Communication dans un congrès hal-01830913v1
Surface treatments of Sb-based materials for infrared photodetectors R. Chaghi,C. Cervera,F. Fagnou,J.-B. Rodriguez,Philippe Christolet al. MOLMAT 2010 Conference, 2010, Montpellier, France Communication dans un congrès hal-01830991v1
Residual carrier concentration in InAs/GaSb superlattice structures to define optimized midwave infrared photodiode L. Konczewicz,Sylvie Contreras,M. Baj,C. Cervera,J.-P. Perezet al. Exmatec Conference, 2010, Darmstadt, Germany Communication dans un congrès hal-01831030v1
Sb-based lasers grown on highly mismatched substrates Laurent Cerutti,Jean-Rémy Reboul,Jean-Baptiste Rodriguez,Eric Tournié Mid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China Communication dans un congrès hal-01831036v1
Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator: towards mid-infrared photonic integrated circuits for environmental and bio-medical applications N. Hattasan,L. Cerutti,J.-B. Rodriguez,E. Tournié,D. Van Thourhoutet al. 10th MIOMD Conference, 2010, Shanghai, China Communication dans un congrès hal-01831108v1
GaSb based solar cells designed for high solar concentration Y. Cuminal,N. Cammalleri,J.-B. Rodriguez,Philippe Christol,A. Foucaranet al. Thin films 2010 International Conference, 2010, Aix en Provence, France Communication dans un congrès hal-01831005v1
GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperature L. Cerutti,J.-B. Rodriguez,Eric Tournié IEEE Indium Phosphide and Related Materials (IPRM) 2010, 2010, Kagawa, Japan Communication dans un congrès hal-01828237v1
Effect of pressure on electrical properties of short period InAs/GaSb superlattice Leszek Konczewicz,Sylvie Contreras,H. Aït-Kaci,Y. Cuminal,Jean-Baptiste Rodriguezet al. 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. pp.643-647 Communication dans un congrès hal-00401354v1
Antimonide-based structures for photodiode and photovoltaic systems Philippe Christol,C. Cervera,R. Chaghi,G. Boissier,Jean-Baptiste Rodriguezet al. Workshop "Frontiers of nanoscale spintronics, photodetection and photovoltaic", 2009, Marseille, France Communication dans un congrès hal-01826614v1
Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substrates Jean-Baptiste Rodriguez,L. Cerutti,E. Tournié Workshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), 2009, Malaga, Spain Communication dans un congrès hal-01827647v1
New chemical etching procedures of antimonide-based materials for infrared detectors R. Chaghi,C. Cervera,H. Aït-Kaci,P. Grech,Y. Cuminalet al. 2d International Meeting on Materials for Electronic Applications, 2009, Hammamet, Tunisia Communication dans un congrès hal-01828306v1
Transport measurements on InAs/GaSb superlattice structures for mid-infrared photodiode C. Cervera,Jean-Philippe Perez,Radouane Chaghi,Jean-Baptiste Rodriguez,Philippe Christolet al. 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON 16), Aug 2009, Montpellier (FRANCE), France. pp.012030 Communication dans un congrès hal-00536291v1
Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates J.-B. Rodriguez,L. Cerutti,E. Tournié 36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States Communication dans un congrès hal-01828229v1
Surface treatment of antimonide-based materials by electrochemical process R. Chaghi,C. Cervera,J.-B. Rodriguez,Philippe Christol,H. Aït-Kaciet al. 2nd International Workshop on Chemistry and Applications (CIC2), 2009, Batna, Algeria Communication dans un congrès hal-01828281v1
Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate J.-B. Rodriguez,L. Cerutti,E. Tournié Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States Communication dans un congrès hal-01828217v1
Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy E. Luna,B. Satpati,B.H. Hong,S. I. Rybchenko,Jean-Baptiste Rodriguezet al. 15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), 2009, Zakopane, Poland Communication dans un congrès hal-01827641v1
Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs Substrate L. Cerutti,J.-B. Rodriguez,P. Grech,Eric Tournié Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States Communication dans un congrès hal-01828223v1
Surface treatments of Sb-based photodetectors H. Aït-Kaci,D. Boukredimi,M. Mebarki,R. Chaghi,P. Grechet al. MADICA 2008, 2008, Rabat, Morocco Communication dans un congrès hal-01825849v1
Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy E. Luna,F. Ishikawa,B. Satpati,Jean-Baptiste Rodriguez,E. Tourniéet al. International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada Communication dans un congrès hal-01825828v1
Improvement material performances of InAs/GaSb superlattice photodiodes R. Chaghi,Y. Cuminal,H. Aït-Kaci,Jean-Baptiste Rodriguez,P. Grechet al. EXMATEC, Jun 2008, Łódź, Poland Communication dans un congrès hal-00401337v1
Improvement performances of InAs/GaSb superlattice photodiode R. Chaghi,Y. Cuminal,H. Aït-Kaci,Jean-Baptiste Rodriguez,L. Konczewiczet al. EXMATEC'08, 2008, Lodz, Poland Communication dans un congrès hal-01825856v1
Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications. Philippe Christol,Yvan Cuminal,Jean-Baptiste Rodriguez,André Joullié,V.K. Kononenkoet al. 14th International Symposium nanostrucutres : Physics and Technology., Jun 2006, St Petersbourg., Russia Communication dans un congrès hal-00103333v1
Photodétecteurs infrarouges non redroidis à superréseaux InAs/GaSb : modélisation et caractérisation optique. Yvan Cuminal,Gerald Ferblantier,Philippe Christol,Jean-Baptiste Rodriguez,André Joullié 11eme Journées Nano-Micro Electronique et Optoélectronique, Apr 2006, Aussois, France Communication dans un congrès hal-00102206v1
Multiphysic FEMLAB modelling to evaluate mid-infrared photonic detector performances Yvan Cuminal,Philippe Christol,Jean-Baptiste Rodriguez,André Joullié Nov 2005, pp.109-112 Communication dans un congrès hal-00102053v4
A survey of new laser and detector structures for 3-5 μm midinfrared spectral range André Joullié,Philippe Christol,Jean-Baptiste Rodriguez,Hocine Ait-Kaci,France Chevrieret al. SPIE Proceedings, 2004, Karkhov, Russia. ⟨10.1117/12.583464⟩ Communication dans un congrès hal-01756650v1
New laser and detector structures for mid-infrared Philippe Christol,A. Joullié,Jean-Baptiste Rodriguez,H. Aït-Kaci,F. Chevrier CAOL'03. 1st International Conference on Advanced Optoelectronics and Lasers. Jointly with 1st Workshop on Precision Oscillations in Electronics and Optics, 2003, Alushta, Ukraine. ⟨10.1109/CAOL.2003.1250502⟩ Communication dans un congrès hal-01756652v1

Poster de conférence (15)

Study of physical properties of antiphase boundaries in III-V epitaxial layer on silicon with conductive tip atomic force microscopy (C-AFM) and with Kelvin Probe Force Microscopy (KPFM) techniques. Rozenn Bernard,Michel Ramonda,Audrey Gilbert,Tony Rohel,Julie Le Pouliquenet al. C'NANO, 2025, Paris, France Poster de conférence hal-05296571v1
Threading and misfit dislocations study by Electron Channeling Contrast Imaging Audrey Gilbert,Ariane Meguekam-Sado,Eric Tournié,Jean-Baptiste Rodriguez Euro MBE 2025, Mar 2025, Auron, France Poster de conférence hal-04992047v1
Etude des propriétés de transport des parois d’antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM. Rozenn Bernard,Michel Ramonda,Audrey Gilbert,Tony Rohel,Julie Le Pouliquenet al. GDR MatEpi, 2025, Lille, France Poster de conférence hal-05296596v1
Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics Milan Silvestre,Audrey Gilbert,Stefano Calcaterra,Giovanni Isella,Jean-Baptiste Rodriguezet al. Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France. Poster de conférence hal-04738104v1
Kinetic Monte Carlo simulation of GaAs growth on (001) Silicon Milan Silvestre,Audrey Gilbert,Stefano Calcaterra,Giovanni Isella,Jean-Baptiste Rodriguezet al. Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France. Poster de conférence hal-04738181v1
Type-I and type-II interband cascade lasers emitting around 2.7 µm Maeva Fagot,Daniel Andrés Díaz-Thomas,Yves Rouillard,Jean-Baptiste Rodriguez,Eric Tourniéet al. Journées Nano, Micro et Optoelectronique (JNMO) 2024, Oct 2024, Sète, France Poster de conférence hal-04738411v1
Direct growth of GaSb on Ge, Ge-on-Si and SiGe-on-Si platforms for integrated mid infra-red photonics Milan Silvestre,Jean-Baptiste Rodriguez,Stefano Calcaterra,Giovanni Isella,Eric Tournié The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan Poster de conférence hal-04737853v1
MIR Sb-based Interband cascade lasers on metamorphic substrates Maeva Fagot,Daniel Andres Diaz-Thomas,Audrey Gilbert,Michel Ramonda,Gad Kombilaet al. International Nano-Optoelectronics Workshop (iNOW) 2023, Jul 2023, Würzburg, Germany. 2023 Poster de conférence hal-04282939v1
ICLs à 3,3 µm sur substrats de GaSb, GaAs et Si (001) Maeva Fagot,Daniel Andres Diaz-Thomas,Audrey Gilbert,Michel Ramonda,Gad Kombilaet al. GDR MatEpi 2023, Jul 2023, Paris, France. 2023 Poster de conférence hal-04282846v1
Effectiveness of AlSb dislocation filter layer during GaSb‐on‐Si epitaxy Karl Graser,Audrey Gilbert,Steffen Richter,Jean-Baptiste Rodriguez,Laurent Ceruttiet al. Euro MBE 2023, Apr 2023, Madrid, Spain. Poster de conférence hal-04739795v1
Type-II Interband cascade lasers grown on (100) GaAs substrates Maeva Fagot,Daniel Andres Diaz Thomas,Michel Ramonda,Gad Kombila,Jean-Baptiste Rodriguezet al. 21st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain. 2023 Poster de conférence hal-04282761v1
In situ determination of the optimized growth conditions of GaSbBi alloys Olivier Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez 10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France Poster de conférence hal-02327276v1
Ga(In)SbBi alloys for mid-IR applications: growth and characterization Olivier Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez 16èmes journées Nano, Micro et Optoélectronique, 2018, Cap Esterel, France Poster de conférence hal-02327294v1
GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization Olivier Delorme,Laurent Cerutti,Robert Kudrawiec,Esperanza Luna,J. Kopaczeket al. 34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France Poster de conférence hal-02327289v1
Growth and characterization of high Bi-content GaSbBi alloys Olivier Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez 19th European Workshop on Molecular Beam Epitaxy, 2017, Saint-Petersburg, Russia Poster de conférence hal-02327303v1

Pré-publication, Document de travail (1)

A topological field-effect memristor Manuel Meyer,Selena Barragan,Sergey Krishtopenko,Adriana Wolf,Monika Emmerlinget al. 2025 Pré-publication, Document de travail hal-05408357v1

Proceedings/Recueil des communications (2)

0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation J. Guise,H. Ratovo,M. Thual,J. Hesler,T. Recket al. 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. IEEE, pp.1-2, 2023, ⟨10.1109/IRMMW-THz57677.2023.10299360⟩ Proceedings/Recueil des communications hal-04282977v1
Waveguide-integrated optically-controlled THz modulator J. Guise,H. Ratovo,S. Blin,L. Cerutti,J.-B. Rodriguezet al. 47th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2022, Aug 2022, Delft, Netherlands. IEEE, pp.1-2, 2022, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 978-172819427-1. ⟨10.1109/IRMMW-THz50927.2022.9895784⟩ Proceedings/Recueil des communications hal-04229373v1

HDR (1)

Épitaxie et étude de matériaux et composants à semiconducteurs antimoniurés Jean Baptiste Rodriguez Science des matériaux [cond-mat.mtrl-sci]. Université Montpellier, 2020 HDR tel-03160492v1

Chapitre d'ouvrage (3)

GaSbBi alloys and heterostructures: fabrication and properties O. Delorme,L. Cerutti,R. Kudrawiec,Esperanza Luna,J. Kopaczeket al. Wang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8. ⟨10.1007/978-981-13-8078-5_6⟩ Chapitre d'ouvrage hal-02326182v1
Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si Eric Tournié,Jean-Baptiste Rodriguez,Laurent Cerutti,Roland Teissier,Alexei Baranov Silicon Photonics, 99, Academic Press, pp.1-25, 2018, Semiconductor and Semimetals, 978-0-12-815099-3. ⟨10.1016/bs.semsem.2018.08.002⟩ Chapitre d'ouvrage hal-02342602v1
GaSb Lasers Grown on Silicon Substrate for Telecom Applications Eric Tournié,Andrea Castellano,Karine Madiomanana,Grégoire Narcy,Alexandre Garreauet al. Molecular Beam Epitaxy, Elsevier, pp.625-635, 2018, 978-0-12-812136-8. ⟨10.1016/B978-0-12-812136-8.00029-3⟩ Chapitre d'ouvrage hal-02342603v1

Thèse (1)

Superréseaux InAs/GaSb réalisés par épitaxie par jets moléculaires pour photodétection à 300 K dans le moyen-infrarouge Jean-Baptiste Rodriguez Micro et nanotechnologies/Microélectronique. Université Montpellier II - Sciences et Techniques du Languedoc, 2005. Français. ⟨NNT : ⟩ Thèse tel-00618583v1