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Marc Bocquet

Enseignant Chercheur (Professeur des universités) à l'université d'Aix-Marseille.
102
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Presentation

Professeur des Universités - 63ème section CNU ============================================== Unités de rattachement actuelles -------------------------------- ### Laboratoire de recherche : Institut Matériaux Microélectronique Nanosciences de Provence (Im2np) Im2np, UMR CNRS 7334 et Université d'Aix-Marseille <http://www.im2np.fr> Equipe Mémoires - Département ASCE ### Composante d'enseignement : IUT dpt GEII de Marseille <https://iut.univ-amu.fr/departements/geii-marseille> Responsabilités Administratives ### Laboratoire - Depuis 2017 : Co-responsable de l'équipe Mémoires de l'IM2NP - Depuis 2017 : Membre du conseil scientifique de l'IM2NP ### Unité de Formation - 2019-2020 : Co-responsable de la 2ème année du cycle préparatoire intégrée de Polytech Marseille - 2014-2019 : Responsable d'année du département MT de Polytech Marseille - 2012-2014 : Responsable d'un parcours d'enseignement au département MT de Polytech Marseille Diplômes -------- - Juin 2017 : Habilitation à diriger les recherches (HDR), Université d’Aix-Marseille. - Novembre 2009 : Thèse de doctorat en Micro&amp;NanoElectronique de l'INPG, Grenoble. - 2005-2006 : Master NanoTechnologies Université Joseph Fourier, Grenoble, mention bien - 2003-2006 : Diplôme d'ingénieur ENSERG - INPG, Grenoble, mention très bien Activité d'enseignement ----------------------- Volume : Environ 2500 HETD enseignées depuis 2006 Niveaux : Cycle préparatoire (2A), école d'ingénieur (3A-4A-5A), formation continue Matières enseignés : Base de l'électronique numérique, microcontrôleur, électrotechnique, physique et technologie des composants à semi-conducteur, mémoires non-volatiles Thématiques de recherche ------------------------ ### Mots-clefs thématiques : Technologies mémoires émergentes, micro-nanoélectronique, électronique flexible, mémoires non-volatiles, mémoires résistives, RRAM, CBRAM, PCM, FRAM ### Compétences : Microscopie champ proche (AFM, EFM, KPFM, C-AFM), caractérisation électrique sous pointes, modélisation physique, modélisation compacte ### Thèmes : - Modélisation et caractérisation des mémoires innovantes : RRAM, PCRAM, FRAM - Développement technologique de dispositifs mémoires sur support souple\\\\ - Optimisation de nouvelles architectures mémoires de type EEPROM/Flash Projets de recherche -------------------- Implication en tant que participant (P) ou coordinateur (C) : - ANR Neuronic (2019-2023) (C) - IPCEI Nano2022 (2019-2022) (C) - UNICO Chist-ERA (2019-2022) (P) - ANR Reflex (2012-2015) (P) - ANR Dipmem (2012-2015) (P) - Carnot POLYMEM (2014) (P) Expertises Nationales --------------------- - Participation à des jurys de thèse : 2 en tant que président, 4 en tant que rapporteur et 1 en tant que Examinateur - Depuis 2016 : Expertise de dossiers AGIR-PEPS, ANR, IRS, projet region. - 2013 : Membre de la commission de Spécialité de la 63ème section collège B Encadrement doctoral -------------------- - 4 thèses en co-encadrement soutenues - 2 thèses en co-encadrement en cours. - Co-encadrement de thèses sous contrat CIFRE et CTBU CEA. Dissémination scientifique -------------------------- - 105 publications - 25 revues internationales à comité de lecture. - 54 proceedings de conférences internationales à comité de lecture. - 2 articles de vulgarisation scientifiques. - 7 conférences invitées - 1 brevet.

Publications

A Memristor-Based Bayesian Machine

Kamel-Eddine Harabi , Tifenn Hirtzlin , Clément Turck , Elisa Vianello , Raphaël Laurent
Nature Electronics, 2023, 6, pp.52. ⟨10.1038/s41928-022-00886-9⟩
Journal articles hal-03861134v1
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Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential

Nikhil Garg , Ismael Balafrej , Terrence Stewart , Jean-Michel Portal , Marc Bocquet
Frontiers in Neuroscience, 2022, 16, 983950, 12 p. ⟨10.3389/fnins.2022.983950⟩
Journal articles hal-03834905v1
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High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays

T. Francois , J. Coignus , A. Makosiej , B. Giraud , C. Carabasse
IEEE Transactions on Electron Devices, 2022, pp.1-7. ⟨10.1109/TED.2021.3138360⟩
Journal articles hal-03596923v1
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OxRAM+OTS optimization for Binarized Neural Network hardware implementation

Joel Minguet Lopez , Tifenn Hirtzlin , Manon Dampfhoffer , Laurent Grenouillet , Lucas Reganaz
Semiconductor Science and Technology, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩
Journal articles hal-03418653v1
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Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors

T. Francois , L. Grenouillet , J. Coignus , N. Vaxelaire , C. Carabasse
Applied Physics Letters, 2021, 118 (6), pp.062904. ⟨10.1063/5.0035650⟩
Journal articles hal-03596986v1
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Morphology and reliability aspects of 40 nm eSTM™ architecture

Franck Melul , V. Della Marca , Marc Bocquet , Madjid Akbal , Pierre Laine
Microelectronics Reliability, 2021, 126, pp.114266. ⟨10.1016/j.microrel.2021.114266⟩
Journal articles hal-03596892v1
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Model of the Weak Reset Process in HfO x Resistive Memory for Deep Learning Frameworks

Atreya Majumdar , Marc Bocquet , Tifenn Hirtzlin , Axel Laborieux , Jacques-Olivier Klein
IEEE Transactions on Electron Devices, 2021, 68 (10), pp.4925-4932. ⟨10.1109/TED.2021.3108479⟩
Journal articles hal-03372056v1
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Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays

Tifenn Hirtzlin , Marc Bocquet , Bogdan Penkovsky , Jacques-Olivier Klein , Etienne Nowak
Frontiers in Neuroscience, 2020, 13, ⟨10.3389/fnins.2019.01383⟩
Journal articles hal-02436382v1
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Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations

Alexandre Levisse , Marc Bocquet , Marco Rios , Mouhamad Alayan , Mathieu Moreau
IEEE Access, 2020, pp.109297-109308. ⟨10.1109/ACCESS.2020.3000867⟩
Journal articles hal-02863232v1
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Implementation of Ternary Weights With Resistive RAM Using a Single Sense Operation per Synapse

Axel Laborieux , Marc Bocquet , Hirtzlin Tifenn , Jacques-Olivier Klein , Etienne Nowak
IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, pp.1-10. ⟨10.1109/TCSI.2020.3031627⟩
Journal articles hal-02983778v1
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Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays

M. Alayan , E. Muhr , A. Levisse , Marc Bocquet , M. Moreau
IEEE Transactions on Circuits and Systems II: Express Briefs, 2019, 66 (5), pp.748-752. ⟨10.1109/TCSII.2019.2908967⟩
Journal articles hal-02158840v1
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Stochastic Computing for Hardware Implementation of Binarized Neural Networks

Tifenn Hirtzlin , Bogdan Penkovsky , Marc Bocquet , Jacques-Olivier Klein , Jean-Michel Portal
IEEE Access, 2019, pp.1-1. ⟨10.1109/ACCESS.2019.2921104⟩
Journal articles hal-02158846v1
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Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

Corentin Pigot , Marc Bocquet , Fabien Gilibert , Marina Reyboz , Olga Cueto
IEEE Transactions on Electron Devices, 2018, pp.1 - 8. ⟨10.1109/TED.2018.2862155⟩
Journal articles hal-01869957v1

Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy

Charles Rebora , Ruomeng Huang , Gabriela P. Kissling , Marc Bocquet , C H (kees) De Groot
Nanotechnology, 2018, ⟨10.1088/1361-6528/aae6db⟩
Journal articles hal-01951256v1
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Phase-Change Memory: A Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching

Corentin Pigot , Fabien Gilibert , Marina Reyboz , Marc Bocquet , Paola Zuliani
Japanese Journal of Applied Physics, inPress, 57 (4S), ⟨10.7567/JJAP.57.04FE13⟩
Journal articles hal-01737915v1
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Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

V. Della Marca , J. Postel-Pellerin , T. Kempf , A. Regnier , P. Chiquet
Microelectronics Reliability, 2018, 88-90, pp.159 - 163. ⟨10.1016/j.microrel.2018.06.116⟩
Journal articles hal-01900789v1
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Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology

Jean-Michel Portal , Marc Bocquet , Santhosh Onkaraiah , Mathieu Moreau , Hassen Aziza
IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686. ⟨10.1109/TNANO.2017.2703985⟩
Journal articles hal-01745418v1
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Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application

A. Prakash , D. Deleruyelle , J. Song , Marc Bocquet , H. Hwang
Applied Physics Letters, 2015, 106 (23), pp.233104. ⟨10.1063/1.4922446⟩
Journal articles hal-01737306v1
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A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAM

Hassen Aziza , Marc Bocquet , Mathieu Moreau , Jean-Michel Portal
Solid-State Electronics, 2015, 103, pp.73 - 78. ⟨10.1016/j.sse.2014.09.005⟩
Journal articles hal-01737300v1

Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure

Sarpi Brice , Nabil Rochdi , Rachid Daineche , Maxime Bertoglio , Christophe Girardeaux
Surface Science Letters, 2015, 642, pp.L1-L5. ⟨10.1016/j.susc.2015.08.003⟩
Journal articles hal-01496546v1

Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories

Weisheng Zhao , Mathieu Moreau , Erya Deng , Yue Zhang , Jean-Michel Portal
IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61 (2), pp.443 - 454. ⟨10.1109/TCSI.2013.2278332⟩
Journal articles hal-01743999v1

An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies

Jean-Michel Portal , Marc Bocquet , Mathieu Moreau , Hassen Aziza , Damien Deleruyelle
Journal of Electronic Science and Technology, 2014, 12 (2), pp.173 - 181. ⟨10.3969/j.issn.1674-862X.2014.02.007⟩
Journal articles hal-01745646v1

Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells

W. Zhao , M. Portal , W. Kang , Mathieu Moreau , Y. Zhang
Journal of Parallel and Distributed Computing, 2014, 74 (6), pp.2484 - 2496. ⟨10.1016/j.jpdc.2013.08.004⟩
Journal articles hal-01744000v1

RRAM-based FPGA for “Normally Off, Instantly On” applications

Ogun Turkyilmaz , Santhosh Onkaraiah , Marina Reyboz , Fabien Clermidy , H. Hraziia
Journal of Parallel and Distributed Computing, 2014, 74, pp.2441 - 2451. ⟨10.1016/j.jpdc.2013.08.003⟩
Journal articles hal-01743243v1
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Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Marc Bocquet , Hassen Aziza , Weisheng Zhao , Yue Zhang , Santhosh Onkaraiah
Journal of Low Power Electronics and Applications, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩
Journal articles hal-01737320v1
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Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

Marc Bocquet , Damien Deleruyelle , Hassen Aziza , Christophe Muller , Jean-Michel Portal
IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩
Journal articles hal-01737291v1
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Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

H. Hraziia , Adam Makosiej , Giorgio Palma , Jean-Michel Portal , Marc Bocquet
Solid-State Electronics, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩
Journal articles hal-01744003v1

A novel test structure for OxRRAM process variability evaluation

Hassen Aziza , Marc Bocquet , Jean-Michel Portal , Mathieu Moreau , Christophe Muller
Microelectronics Reliability, 2013, 53 (9-11), pp.1208 - 1212. ⟨10.1016/j.microrel.2013.07.012⟩
Journal articles hal-01745650v1
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Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications

Jean-Michel Portal , Marc Bocquet , Damien Deleruyelle , Christophe Muller
Journal of Low Power Electronics, 2012, 8 (1), pp.1 - 10. ⟨10.1166/jolpe.2012.1172⟩
Journal articles hal-01745507v1
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Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate

D. Deleruyelle , Magali Putero , T. Ouled-Khachroum , Marc Bocquet , M.V. Coulet
Solid-State Electronics, 2012, ⟨10.1016/j.sse.2012.06.010⟩
Journal articles emse-00767177v1

Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics

Guillaume Gay , Gabriel Molas , Marc Bocquet , Eric Jalaguier , Marc Gély
IEEE Transactions on Electron Devices, 2012, 59 (4), pp.933 - 940. ⟨10.1109/TED.2012.2182769⟩
Journal articles hal-01804667v1

Investigation of charge-trap memories with AlN based band engineered storage layers

Gabriel Molas , J.P. Colonna , R. Kies , D. Belhachemi , Marc Bocquet
Solid-State Electronics, 2011, 58 (1), pp.68 - 74. ⟨10.1016/j.sse.2010.11.030⟩
Journal articles hal-01804675v1
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Study of parasitic trapping in alumina used as blocking oxide for nonvolatile memories

J.-P. Colonna , Marc Bocquet , Gabriel Molas , N. Rochat , P. Blaise
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2011, 29 (1), pp.159-165. ⟨10.1116/1.3535552⟩
Journal articles hal-01804670v1
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Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

Marc Bocquet , Damien Deleruyelle , Christophe Muller , Jean-Michel Portal
Applied Physics Letters, 2011, 98 (26), ⟨10.1063/1.3605591⟩
Journal articles hal-01779321v1

Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas
Japanese Journal of Applied Physics, 2010, 49, pp.04DD12
Journal articles hal-00596309v1

Reliability of charge trapping memories with high-k control dielectrics

G. Molas , Marc Bocquet , E. Vianello , L. Perniola , H. Grampeix
Microelectronic Engineering, 2009, 86, pp.1796-1803
Journal articles hal-00596125v1
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Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley
Solid-State Electronics, 2009, 53, pp.786 - 791. ⟨10.1016/j.sse.2009.03.018⟩
Journal articles hal-01737746v1

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories.

G. Molas , Marc Bocquet , J. Buckley , H. Grampeix , M. Gély
Microelectronic Engineering, 2008, 85, 2393-2399
Journal articles hal-00391751v1

Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories

G. Molas , Marc Bocquet , J. Buckley , H. Grampeix , M. Gely
Solid-State Electronics, 2007, 51 (11-12), pp.1540 - 1546. ⟨10.1016/j.sse.2007.09.020⟩
Journal articles hal-01804685v1
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Binary ReRAM-based BNN first-layer implementation

Mona Ezzadeen , Atreya Majumdar , Sigrid Thomas , Jean-Philippe Noël , Bastien Giraud
2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), Apr 2023, Antwerp, Belgium. pp.1-6, ⟨10.23919/DATE56975.2023.10137057⟩
Conference papers hal-04270562v1
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Memory Window in Si:HfO 2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes

J. Laguerre , Marc Bocquet , O. Billoint , S. Martin , J. Coignus
IMW 2023 - 2023 IEEE International Memory Workshop, IEEE, May 2023, Monterey (CA), United States. pp.1-4, ⟨10.1109/IMW56887.2023.10145972⟩
Conference papers hal-04130967v1
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Experimental Demonstration of Memristor Delay-Based Logic In-Memory Ternary Neural Network

A. Renaudineau , K.-E. Harabi , C. Turck , A. Laborieux , E. Vianello
2023 Silicon Nanoelectronics Workshop (SNW), Jun 2023, Kyoto, Japan. pp.43-44, ⟨10.23919/SNW57900.2023.10183957⟩
Conference papers hal-04270396v1

A Multimode Hybrid Memristor-CMOS Prototyping Platform Supporting Digital and Analog Projects

Kamel-Eddine Harabi , C. Turck , Marie Drouhin , A. Renaudineau , T. Bersani-Veroni
2023 28th Asia and South Pacific Design Automation Conference (ASP-DAC), Jan 2023, Tokyo (Japan), France. pp.184-185, ⟨10.1145/3566097.3567944⟩
Conference papers hal-04270420v1
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Energy-Efficient Bayesian Inference Using Near-Memory Computation with Memristors

C. Turck , K.-E. Harabi , T. Hirtzlin , E. Vianello , R. Laurent
2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), Apr 2023, Antwerp, Belgium. pp.1-2, ⟨10.23919/DATE56975.2023.10137312⟩
Conference papers hal-04270563v1
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1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing

J. Minguet Lopez , F. Rummens , L. Reganaz , A. Heraud , T. Hirtzlin
IMW 2022 - IEEE International Memory Workshop, May 2022, Dresden, Germany. pp.1-4, ⟨10.1109/IMW52921.2022.9779253⟩
Conference papers cea-03707392v1

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays

J. Minguet Lopez , N. Castellani , L. Grenouillet , L. Reganaz , G. Navarro
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩
Conference papers hal-03622145v1
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Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges

M. Ezzadeen , A. Majumdar , Marc Bocquet , B. Giraud , J.-P. Noel
ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), Sep 2021, Grenoble, France. pp.83-86, ⟨10.1109/ESSCIRC53450.2021.9567742⟩
Conference papers hal-03597353v1
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CAPC: A Configurable Analog Pop-Count Circuit for Near-Memory Binary Neural Networks

F. Jebali , A. Majumdar , A. Laborieux , T. Hirtzlin , E. Vianello
2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), Aug 2021, Lansing, France. pp.158-161, ⟨10.1109/MWSCAS47672.2021.9531919⟩
Conference papers hal-03624922v1
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16kbit HfO 2 :Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility

T Francois , J Coignus , A Makosiej , B Giraud , C Carabasse
67th Annual IEEE International Electron Devices Meeting (IEDM) 2021, Dec 2021, San Francisco, United States. ⟨10.1109/IEDM19574.2021.9720640⟩
Conference papers hal-03596974v1
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Hot Electron Source Side Injection Comprehension in 40nm eSTM™

Franck Melul , Thibault Kempf , Vincenzo Della Marca , Marc Bocquet , Madjid Akbal
2021 IEEE International Memory Workshop (IMW), May 2021, Dresden, France. pp.1-4, ⟨10.1109/IMW51353.2021.9439613⟩
Conference papers hal-03596898v1
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Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse

Axel Laborieux , Marc Bocquet , Tifenn Hirtzlin , Jacques-Olivier Klein , L Herrera Diez
2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2020, Genova (virtual), Italy. ⟨10.1109/AICAS48895.2020.9073877⟩
Conference papers hal-02403984v1
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High-Density 3D Monolithically Integrated Multiple 1T1R Multi-Level-Cell for Neural Networks

E. Esmanhotto , L. Brunet , N. Castellani , D. Bonnet , T. Dalgaty
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco (virtual), United States. pp.36.5.1-36.5.4, ⟨10.1109/IEDM13553.2020.9372019⟩
Conference papers hal-03218937v1
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Embracing the unreliability of memory devices for neuromorphic computing

Marc Bocquet , Tifenn Hirtzlin , Jacques-Olivier Klein , Etienne Nowak , Elisa Vianello
IRPS 2020 - IEEE International Reliability Physics Symposium, IEEE, Apr 2020, Dallas (Texas), United States. pp.1-5, ⟨10.1109/IRPS45951.2020.9128346⟩
Conference papers hal-04019222v1
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In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications

Bogdan Penkovsky , Marc Bocquet , Tifenn Hirtzlin , Jacques-Olivier Klein , Etienne Nowak
2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), Mar 2020, Grenoble, France. pp.690-695, ⟨10.23919/DATE48585.2020.9116439⟩
Conference papers hal-03218970v1
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Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

T. Francois , L. Grenouillet , J. Coignus , P. Blaise , C. Carabasse
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. ⟨10.1109/IEDM19573.2019.8993485⟩
Conference papers hal-02399654v1
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Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction

Tifenn Hirtzlin , Bogdan Penkovsky , Jacques-Olivier Klein , Nicolas Locatelli , Adrien Vincent
15th IEEE / ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2019, Qingdao, China
Conference papers hal-02399718v1
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Memory-Centric Neuromorphic Computing With Nanodevices

Damien Querlioz , Tifenn Hirtzlin , Jacques-Olivier Klein , Etienne Nowak , Elisa Vianello
Biomedical Circuits and Systems Conference (BiOCAS), Oct 2019, Nara, Japan. ⟨10.1109/BIOCAS.2019.8919010⟩
Conference papers hal-02399731v1
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Hybrid Analog-Digital Learning with Differential RRAM Synapses

T. Hirtzlin , Marc Bocquet , M. Ernoult , J.-O Klein , E. Nowak
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. ⟨10.1109/IEDM19573.2019.8993555⟩
Conference papers hal-02399624v1
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Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks

T Hirtzlin , Marc Bocquet , J.-O Klein , E. Nowak , E. Vianello
IEEE International Conference on Artificial Intellignence Circuits and Systems (AICAS), Mar 2019, Hsinshu, Taiwan. ⟨10.1109/AICAS.2019.8771544⟩
Conference papers hal-02159142v1
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Ferroelectric HfO2 for Memory Applications: Impact of Si Doping Technique and Bias Pulse Engineering on Switching Performance

T. Francois , J. Coignus , L. Grenouillet , J.P. P Barnes , N. Vaxelaire
2019 IEEE 11th International Memory Workshop (IMW), May 2019, Monterey, United States. pp.1-4, ⟨10.1109/IMW.2019.8739664⟩
Conference papers hal-02399691v1
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In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks

Marc Bocquet , T. Hirztlin , J.-O. Klein , E. Nowak , E. Vianello
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.20.6.1-20.6.4, ⟨10.1109/IEDM.2018.8614639⟩
Conference papers hal-02011124v1
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PCM compact model: Optimized methodology for model card extraction

Corentin Pigot , Fabien Gilibert , Marina Reyboz , Marc Bocquet , Jean-Michel Portal
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2018, Austin, United States. pp.190-193, ⟨10.1109/SISPAD.2018.8551654⟩
Conference papers cea-02188521v1

Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues

M. Kharbouche-Harrari , J. Postel-Pellerin , G. Di Pendina , R. Wacquez , D. Aboulkassimi
2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain. pp.243-244, ⟨10.1109/IOLTS.2018.8474088⟩
Conference papers hal-01976697v1
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Resistive and spintronic RAMs: device, simulation, and applications

Elena Ioana Vatajelu , Lorena Anghel , Jean-Michel Portal , Marc Bocquet , Guillaume Prenat
IOLTS 2018 - IEEE 24th International Symposium on On-Line Testing And Robust System Design, Jul 2018, Platja d'Aro, Spain. pp.109-114, ⟨10.1109/IOLTS.2018.8474226⟩
Conference papers hal-01976583v1
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Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory

Corentin Pigot , Fabien Gilibert , Marina Reyboz , Marc Bocquet , Paola Zuliani
49th International Conference on Solid State Devices and Materals, Sep 2017, Tsukuba, Japan
Conference papers hal-01737914v1
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Thermal Laser Attack and High Temperature Heating on HfO2-based OxRAM Cells

A Krakovinsky , Marc Bocquet , R Wacquez , J. Coignus , Jean-Michel Portal
International Symposium on On-Line Testing and Robust System Design, Jul 2017, Thessaloniki, Greece
Conference papers hal-01737925v1

ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology

Hassen Aziza , P. Canet , J. Postel-Pellerin , Mathieu Moreau , Jean-Michel Portal
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. ⟨10.1109/ULIS.2017.7962594⟩
Conference papers hal-01745666v1
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Flash gate optimized process and integration for electrical performances requirement on advanced embedded memory

El Amine Agharben , M. Bileci , A. Roussy , Marc Bocquet
2016 International Symposium on Semiconductor Manufacturing (ISSM), Dec 2016, Tokyo, Japan. ⟨10.1109/ISSM.2016.7934533⟩
Conference papers hal-01737950v1
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Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity

A. Krakovinsky , Marc Bocquet , R. Wacquez , J. Coignus , D. Deleruyelle
2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156
Conference papers hal-01435097v1

Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation

Hassen Aziza , H. Ayari , S. Onkaraiah , Mathieu Moreau , Jean-Michel Portal
2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), Apr 2016, Istanbul, Turkey. pp.1-5, ⟨10.1109/DTIS.2016.7483892⟩
Conference papers hal-01434981v1

Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

G. Molas , G. Piccolboni , M. Barci , B. Traore , J. Guy
2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2016, Unknown, Unknown Region
Conference papers hal-01435224v1
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Conference papers hal-01804658v1
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Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory

El Amine Agharben , A. Roussy , Marc Bocquet , M. Bileci , S Bégouin
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), May 2015, Saratoga Springs, United States. ⟨10.1109/ASMC.2015.7164428⟩
Conference papers hal-01737953v1

Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte

Charles Rebora , Marc Bocquet , T. Ouled-Khachroum , Magali Putero , Damien Deleruyelle
2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩
Conference papers hal-01804660v1
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Printed complementary organic thin film transistors based decoder for ferroelectric memory

A El Amraoui , Marc Bocquet , F. Barros , Jean-Michel Portal , M. Charbonneau
ESSCIRC 2014 - 40th European Solid State Circuits Conference, Sep 2014, Venice Lido, France. ⟨10.1109/ESSCIRC.2014.6942034⟩
Conference papers hal-01738468v1
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Effect of SET temperature on data retention performances of HfO2-based RRAM cells

T. Cabout , E. Vianello , E. Jalaguier , H. Grampeix , G. Molas
2014 IEEE 6th International Memory Workshop (IMW), May 2014, Taipei, France. ⟨10.1109/IMW.2014.6849355⟩
Conference papers hal-01738447v1

Resistive memories: Which applications?

Fabien Clermidy , Natalija Jovanovic , Santhosh Onkaraiah , Houcine Oucheikh , Olivier Thomas
Design Automation and Test in Europe, Mar 2014, Dresden, France. ⟨10.7873/DATE.2014.282⟩
Conference papers hal-01804664v1
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Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability

Hassen Aziza , Haytem Ayari , Santhosh Onkaraiah , Jean-Michel Portal , Mathieu Moreau
2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), Oct 2014, Amsterdam, Netherlands. ⟨10.1109/DFT.2014.6962107⟩
Conference papers hal-01745718v1
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Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells

Y Zhang , Erya y Deng , Jacques-Olivier O Klein , Damien Querlioz , Dafiné Ravelosona
11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩
Conference papers hal-01840795v1
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Temperature impact (up to 200°C) on performance and reliability of HfO2-based RRAMs

T. Cabout , L. Perniola , V. Jousseaume , H. Grampeix , J.F. Nodin
2013 5th IEEE International Memory Workshop (IMW), May 2013, Monterey, United States. ⟨10.1109/IMW.2013.6582112⟩
Conference papers hal-01738426v1

SPICE level analysis of Single Event Effects in an OxRRAM cell

K. Coulié , Marc Bocquet , Hassen Aziza , Jean-Michel Portal , Wenceslas Rahajandraibe
2013 14th Latin American Test Workshop - LATW, Apr 2013, Cordoba, France. ⟨10.1109/LATW.2013.6562684⟩
Conference papers hal-01804661v1

Single-ended sense amplifier robustness evaluation for OxRRAM technology

Hassen Aziza , Marc Bocquet , Mathieu Moreau , Jean-Michel Portal
2013 IEEE Design and Test Symposium (IDT), Dec 2013, Marrakesh, Morocco. ⟨10.1109/IDT.2013.6727097⟩
Conference papers hal-01745737v1
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Analytical study of complementary memristive synchronous logic gates

Jean-Michel Portal , Mathieu Moreau , Marc Bocquet , Hassen Aziza , Damien Deleruyelle
2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩
Conference papers hal-01745759v1
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A Built-In Self-Test Structure (BIST) for Resistive RAMs Characterization: Application to Bipolar OxRRAMs

Hassen Aziza , Marc Bocquet , Mathieu Moreau , Jean-Michel Portal
International Semiconductor Device Research Symposium, Dec 2013, Bethesda, United States
Conference papers hal-01745729v1
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Role of Ti and Pt electrodes on resistance switching variability of HfO$_2$-based Resistive Random Access Memory

T. Cabout , J. Buckley , C. Cagli , V. Jousseaume , J.-F. Nodin
EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices, May 2012, Strasbourg, France. pp.19 - 23, ⟨10.1016/j.tsf.2012.11.050⟩
Conference papers hal-01762335v1
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Bipolar ReRAM Based Non-­‐Volatile Flip-­‐flops for Low-­‐Power Architectures

Santhosh Onkaraiah , Marina Reyboz , Fabien Clermidy , Jean-Michel Portal , Marc Bocquet
2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS), Jun 2012, Montreal, Canada. ⟨10.1109/NEWCAS.2012.6329045⟩
Conference papers hal-01745498v1
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Resistance switching variability in HfO2-based memory structures with different electrodes

Thomas Cabout , Julien Buckley , Carlo Cagli , Vincent Jousseaume , Jean-François Nodin
EMRS Spring Meeting 2012, May 2012, Strasbourg France
Conference papers hal-01738395v1
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Crossbar architecture based on 2R complementary resistive switching memory cell

Weisheng Zhao , Y Zhang , Jacques-Olivier Klein , Damien S Querlioz , Dafine Ravelosona
2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩
Conference papers hal-01745351v1
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Design challenges for prototypical and emerging memory concepts relying on resistance switching

Christophe Muller , D. Deleruyelle , O. Ginez , Jean-Michel Portal , Marc Bocquet
2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩
Conference papers hal-01745644v1
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On the electrical variability of resistive-switching memory devices based on NiO oxide

S Tirano , Marc Bocquet , Christophe Muller , D. Deleruyelle , L. Perniola
2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States
Conference papers hal-01745633v1

Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling

G. Molas , L. Masoero , P. Blaise , A. Padovani , J. P. Colonna
IEEE IEDM 2010,, 2010, San Francisco, CA, Spain
Conference papers hal-00604550v1

Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories

G. Molas , Marc Bocquet , J. Colonna , V. Vidal , R. Kies
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, Apr 2010, Hsin Chu, France. ⟨10.1109/VTSA.2010.5488949⟩
Conference papers hal-01745640v1

Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices.

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas
International Conference on Solid State Devices and Materials (SSDM), 2009, Sendai, Japan
Conference papers hal-00604215v1

On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley
38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, Edinburgh, France
Conference papers hal-00392558v1

Reliability of charge trapping memories with high-k control dielectrics

G. Molas , Marc Bocquet , H. Grampeix , J.P. Colonna , L. Masarotto
5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, Sep 2008, Austin, United States
Conference papers hal-00392559v1

New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories.

Emmanuel Nowak , Marc Bocquet , L. Perniola , G. Ghibaudo , G. Molas
IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, San Francisco, United States
Conference papers hal-00392162v1
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Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications

G. Molas , Marc Bocquet , J. Buckley , J. P Colonna , L. Masarotto
2007 IEEE International Electron Devices Meeting - IEDM '07, Dec 2007, Washington, France. pp.453-456, ⟨10.1109/IEDM.2007.4418971⟩
Conference papers hal-02072903v1
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Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers

Marc Bocquet , G. Molas , H. Grampeix , J. Buckley , F. Martin
International Conference on Memory Technology and Design (ICMTD), May 2007, Giens, France
Conference papers hal-01745578v1

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap

J. Buckley , Marc Bocquet , G. Molas , M. Gely , P. Brianceau
NVMsIEDM 2006, 2006, San Francisco, United States. pp.XX
Conference papers hal-00147137v1
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NH 3 treatments of Hf-based layers for application as NVM active dielectrics

Marc Bocquet , G. Molas , E. Martínez , H. Grampeix , F. Martin
IEEE Semiconductor Interface Specialists Conference (SISC), Dec 2007, Arlington, United States
Conference poster hal-01745607v1
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Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm

Marc Bocquet
Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble (INPG), 2009. Français. ⟨NNT : ⟩
Theses tel-01737690v1
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Caractérisation et modélisation compacte de mémoires émergentes

Marc Bocquet
Micro et nanotechnologies/Microélectronique. Aix Marseille Université, 2017
Habilitation à diriger des recherches tel-01737675v1