Bogdan Cretu

Publications

Article dans une revue (46)

Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K A. Tahiat,B. Cretu,A. Veloso,E. Simoen Solid-State Electronics, 2025, 225, pp.109068. ⟨10.1016/j.sse.2025.109068⟩ Article dans une revue hal-05118056v1
Novel Y-function methodology parameter estimation from weak to strong inversion operation A. Tahiat,B. Cretu,A. Veloso,E. Simoen Solid-State Electronics, 2025, 225, pp.109071. ⟨10.1016/j.sse.2025.109071⟩ Article dans une revue hal-05118066v1
Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs Bogdan Cretu,Abderrahim Tahiat,Anabela Veloso,Eddy Simoen IEEE Transactions on Electron Devices, 2024, 71 (10), pp.5860-5866. ⟨10.1109/TED.2024.3445310⟩ Article dans une revue hal-05118050v1
Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs A. Tahiat,B. Cretu,A. Veloso,E. Simoen Solid-State Electronics, 2023, 209, pp.108709. ⟨10.1016/j.sse.2023.108709⟩ Article dans une revue hal-04335891v1
(Invited) In-Depth Understanding of the Key Contributors to the Total Flicker Noise in Advanced Logic Devices Bogdan Cretu,Abderrahim Tahiat,Anabela Veloso,Eddy Simoen ECS Transactions, 2023, 112 (1), pp.53-63. ⟨10.1149/11201.0053ecst⟩ Article dans une revue hal-04335869v1
Refined DC and Low-Frequency Noise Characterization at Room and Cryogenic Temperatures of Vertically Stacked Silicon Nanosheet FETs Bogdan Cretu,Anabela Veloso,Eddy Simoen IEEE Transactions on Electron Devices, 2023, 70 (1), pp.254-260. ⟨10.1109/TED.2022.3225248⟩ Article dans une revue hal-04335878v1
In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets B. Cretu,A. Veloso,E. Simoen Solid-State Electronics, 2023, 201, pp.108591. ⟨10.1016/j.sse.2023.108591⟩ Article dans une revue hal-04335886v1
(Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures Bogdan Cretu,Abderrahim Tahiat,Anabela Veloso,Eddy Simoen ECS Transactions, 2023, 111 (1), pp.197-208. ⟨10.1149/11101.0197ecst⟩ Article dans une revue hal-04335860v1
Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided? A. Tahiat,B. Cretu,A. Veloso,E. Simoen Solid-State Electronics, 2023, 209, pp.108711. ⟨10.1016/j.sse.2023.108711⟩ Article dans une revue hal-04335903v1
Performance Perspective of Gate-All-Around Double Nanosheet CMOS Beyond High-Speed Logic Applications Eddy Simoen,Carlos H.S. Coelho,Vanessa C.P. Da Silva,João Martino,Paula Ghedini Der Agopianet al. Journal of Integrated Circuits and Systems, 2022, 17 (2), pp.1-9. ⟨10.29292/jics.v17i2.617⟩ Article dans une revue hal-03852430v1
DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets B. Cretu,Anabela Veloso,Eddy Roger Simoen Solid-State Electronics, 2022, 194, pp.108360. ⟨10.1016/j.sse.2022.108360⟩ Article dans une revue hal-03784465v1
Si GAA NW FETs threshold voltage evaluation Dragos Dobrescu,Bogdan Cretu,Eddy Simoen,Anabela Veloso,Andrei Voicu-Spineanuet al. Solid-State Electronics, 2022, 194, pp.108317. ⟨10.1016/j.sse.2022.108317⟩ Article dans une revue hal-03784467v1
(Invited) Innovations in Transistor Architecture and Device Connectivity Options for Advanced Logic Scaling Anabela Veloso,Geert Eneman,Eddy Simoen,Bogdan Cretu,An de Keersgieteret al. ECS Transactions, 2022, 108 (2), pp.31-42. ⟨10.1149/10802.0031ecst⟩ Article dans une revue hal-03784469v1
Detailed low frequency noise assessment on GAA NW n-channel FETs B. Cretu,A. Bordin,E. Simoen,G. Hellings,D. Lintenet al. Solid-State Electronics, 2021, 181-182, pp.108029. ⟨10.1016/j.sse.2021.108029⟩ Article dans une revue hal-03784462v1
Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization B Cretu,D. Boudier,E. Simoen,A. Veloso,N. Collaertet al. Solid-State Electronics, 2020, pp.107771. ⟨10.1016/j.sse.2020.107771⟩ Article dans une revue hal-02475438v1
Discussion on the Figures of Merit of Identified Traps Located in the Si Film: Surface Versus Volume Trap Densities B Cretu,Beya Nafaa,Eddy Simoen,Geert Hellings,Dimitri Lintenet al. ECS Transactions, 2020, 97 (5), pp.45-51. ⟨10.1149/09705.0045ecst⟩ Article dans une revue hal-02939114v1
Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs D. Boudier,B Cretu,E. Simoen,G. Hellings,T. Schramet al. Solid-State Electronics, 2019, pp.107732. ⟨10.1016/j.sse.2019.107732⟩ Article dans une revue hal-02438740v1
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena B. Nafaa,B Cretu,N. Ismail,O. Touayar,R. Carinet al. Solid-State Electronics, 2018, 150, pp.1-7. ⟨10.1016/j.sse.2018.08.010⟩ Article dans une revue istex hal-02438735v1
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures D. Boudier,B Cretu,E. Simoen,A. Veloso,N. Collaert Solid-State Electronics, 2018, 143, pp.27-32. ⟨10.1016/j.sse.2018.02.015⟩ Article dans une revue istex hal-02438730v1
Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part II: Measurements and results D. Boudier,B. Cretu,E. Simoen,Régis Carin,A. Velosoet al. Solid-State Electronics, 2017, 128, pp.109 - 114. ⟨10.1016/j.sse.2016.10.013⟩ Article dans une revue istex hal-01712353v1
Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology D. Boudier,B. Cretu,E. Simoen,Régis Carin,A. Velosoet al. Solid-State Electronics, 2017, 128, pp.102 - 108. ⟨10.1016/j.sse.2016.10.012⟩ Article dans une revue istex hal-01712351v1
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source Felipe Neves,Paula Agopian,Joao Antonio Martino,Bogdan Cretu,Rita Rooyackerset al. IEEE Transactions on Electron Devices, 2016, 63 (4), pp.1658 - 1665. ⟨10.1109/TED.2016.2533360⟩ Article dans une revue hal-01712409v1
Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices E. Simoen,Bogdan Cretu,W Fang,M. Aoulaiche,Jean-Marc Routoureet al. Solid State Phenomena, 2016, 242, pp.449. ⟨10.4028/www.scientific.net/SSP.242.449⟩ Article dans une revue hal-01196556v1
Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures B Cretu,D Boudier,E. Simoen,A Veloso,N. Collaert Semiconductor Science and Technology, 2016, 31 (12), pp.124006. ⟨10.1088/0268-1242/31/12/124006⟩ Article dans une revue hal-01712415v1
(Invited) Generation-Recombination Noise in Advanced CMOS Devices E. Simoen,A. Oliveira,D. Boudier,J. Mitard,L. Witterset al. ECS Transactions, 2016, 75 (5), pp.111 - 120. ⟨10.1149/07505.0111ecst⟩ Article dans une revue hal-01712452v1
Towards single-trap spectroscopy : Generation-recombination noise in UTBOX SOI nMOSFETs Eddy Simoen,Bogdan Cretu,Wen Fang,M. Aoulaiche,Jean-Marc Routoureet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2015, 7 p. ⟨10.1002/pssc.201400075⟩ Article dans une revue hal-01196247v1
Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy Hakim Hachour,Bogdan Cretu,Jean-Marc Routoure,Régis Carin,A. Benfdilaet al. Solid-State Electronics, 2015, 112, pp.1-6. ⟨10.1016/j.sse.2015.02.014⟩ Article dans une revue hal-01196272v1
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics S.D. dos Santos,Bogdan Cretu,V. Strobel,Jean-Marc Routoure,Régis Carinet al. Solid-State Electronics, 2014, 9 p. ⟨10.1016/j.sse.2014.04.034⟩ Article dans une revue hal-00994378v1
In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature H. Achour,Bogdan Cretu,Jean-Marc Routoure,Régis Carin,Rachida Talmatet al. Solid-State Electronics, 2014, 8 p Article dans une revue hal-00994380v1
Low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs: challenges and opportunities Eddy Simoen,M. Aoulaiche,S.D. dos Santos,J.A. Martino,V. Strobelet al. ECS Journal of Solid State Science and Technology, 2013, pp.q205-q210. ⟨10.1149/2.011311jss⟩ Article dans une revue hal-00994293v1
Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs E. Simoen,M. Aoulaiche,S.D. dos Santos,J.A. Martino,V. Strobelet al. ECS Journal of Solid State Science and Technology, 2013, pp.q205-q210 Article dans une revue hal-00994168v1
Low-Frequency Noise in High-K and SiO 2 UTBOX SOI nMOSFETS S. dos Santos,J. Martino,Vincent Strobel,Bogdan Cretu,Jean-Marc Routoureet al. ECS Transactions, 2013, 52 (1), pp.87-92. ⟨10.1149/05201.0087ecst⟩ Article dans une revue hal-03784649v1
DC and low frequency noise performances of SOI p-FinFETs at very low temperature H. Achour,Rachida Talmat,Bogdan Cretu,Jean-Marc Routoure,A. Benfdilaet al. Solid-State Electronics, 2013, 90, pp.160-165. ⟨10.1016/j.sse.2013.06.006⟩ Article dans une revue hal-00994180v1
Low frequency noise characterization in n-channel FinFETs Rachida Talmat,H. Achour,Bogdan Cretu,Jean-Marc Routoure,A. Benfdilaet al. Solid-State Electronics, 2012, p20-26 Article dans une revue hal-00994184v1
Improvement in the determination by 1/f noise measurements of the interface state distribution in polysilicon TFTs in relation with the compensation law of Meyer Neldel Laurent Pichon,Abdelmalek Boukhenoufa,Bogdan Cretu,Regis Rogel Journal of Applied Physics, 2009, 105, pp.104503. ⟨10.1063/1.3126706⟩ Article dans une revue hal-00387394v1
THERMAL DEPENDENCE OF LOW-FREQUENCY NOISE IN POLYSILICON THIN FILM TRANSISTORS Laurent Pichon,Bogdan Cretu,Abdelmalek Boukhenoufa Thin Solid Films, 2009, 517, pp.6367. ⟨10.1016/j.tsf.2009.02.055⟩ Article dans une revue hal-00522575v1
Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs W. Guo,B. Cretu,J.-M. Routoure,R. Carin,E. Simoenet al. Solid-State Electronics, 2008, 52 (12), pp.1889-1894. ⟨10.1016/j.sse.2008.06.055⟩ Article dans une revue istex hal-03784657v1
Numerical simulation of low frequency noise in polysilicon thin film transistors Laurent Pichon,Abdelmalek Boukhenoufa,Christophe Cordier,Bogdan Cretu IEEE Electron Device Letters, 2007, 28 (8), pp.716-718 Article dans une revue hal-00198456v1
Numerical Simulation of Low-Frequency Noise in Polysilicon Thin-Film Transistors Laurent Pichon,Abdelmalek Boukhenoufa,Christophe Cordier,Bogdan Cretu IEEE Electron Device Letters, 2007, 28 (8), pp.716. ⟨10.1109/LED.2007.900849⟩ Article dans une revue hal-00171712v1
Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs W. Guo,B. Cretu,J.-M. Routoure,R. Carin,E. Simoenet al. Solid-State Electronics, 2007, 51 (9), pp.1180-1184. ⟨10.1016/j.sse.2007.07.033⟩ Article dans une revue istex hal-03784679v1
Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors I. Lartigau,J. Routoure,W. Guo,B. Cretu,R. Carinet al. Journal of Applied Physics, 2007, 101 (10), pp.104511. ⟨10.1063/1.2732685⟩ Article dans une revue hal-03784674v1
Numerical simulation of conduction and low frequency noise in polysilicon thin film transistors Laurent Pichon,Abdelmalek Boukhenoufa,Christophe Cordier,Bogdan Cretu IEEE Electron Device Letters, 2007, 28, pp.719-718 Article dans une revue hal-00197122v1
Numerical simulation of conduction and low-frequency noise in polysilicon thin film transistors Abdelmalek Boukhenoufa,Christophe Cordier,Laurent Pichon,Bogdan Cretu Thin Solid Films, 2007, 515, pp.7556. ⟨10.1016/j.tsf.2006.11.162⟩ Article dans une revue hal-00171471v1
Numerical simulations of conduction and low-frequency noise in polysilicon TFTs Abdelmalek Boukhenoufa,Christophe Cordier,Laurent Pichon,Bogdan Cretu Thin Solid Films, 2007, pp.7556-7559 Article dans une revue hal-00259046v1
Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack W. Guo,G. Nicholas,B. Kaczer,R. Todi,B. de Jaegeret al. IEEE Electron Device Letters, 2007, 28 (4), pp.288-291. ⟨10.1109/LED.2007.891797⟩ Article dans une revue hal-03784663v1
Determination of interface state distribution in polysilicon thin film transistors from low frequency -noise measurements: application to analysis of electrical properties Laurent Pichon,Abdelmalek Boukhenoufa,Christophe Cordier,Bogdan Cretu Journal of Applied Physics, 2006, 100 (5), pp.54504-54509 Article dans une revue hal-00437321v1