Beatriz Orfao E Vale Tabernero

Publications

Article dans une revue (7)

0.53 mΩ.cm 2 /592 V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination Hugo Bouillaud,Beatriz Orfao,Etienne Okada,Yannick Roelens,Malek Zegaouiet al. IEEE Electron Device Letters, 2026, pp.1-1. ⟨10.1109/LED.2026.3652934⟩ Article dans une revue hal-05484994v1
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates B Orfao,Mahmoud ABOU DAHER,H Bouillaud,Y Roelens,P Prystawkoet al. Journal of Physics D: Applied Physics, 2026, 59 (12), pp.12LT01. ⟨10.1088/1361-6463/ae506d⟩ Article dans une revue hal-05573797v1
Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications Beatriz Orfao,Amir Al Abdallah,Hugo Bouillaud,Guillaume Ducournau,Yannick Roelenset al. Electronics Letters, 2025, 61 (1), pp.e70307. ⟨10.1049/ell2.70307⟩ Article dans une revue hal-05149241v1
Influence of passivation, doping and geometrical parameters on the avalanche breakdown of GaN SBDs B. Orfao,R A Peña,B G Vasallo,S Pérez,J Mateoset al. Journal of Computational Electronics, 2025, 24, pp.189. ⟨10.1007/s10825-025-02430-2⟩ Article dans une revue hal-05376884v1
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band R. Peña,B. Orfao,I. Íñiguez-De-La-Torre,G. Paz,Mahmoud Abou Daheret al. IEEE Transactions on Electron Devices, 2024, 71 (8), pp.4524-4529. ⟨10.1109/TED.2024.3409202⟩ Article dans une revue hal-04665811v1
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples B. Orfao,G. Di Gioia,B. Vasallo,S. Pérez,J. Mateoset al. Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩ Article dans une revue hal-03741441v1
Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes B. Orfao,B. Vasallo,S. Perez,J. Mateos,D. Moro-Melgaret al. IEEE Transactions on Electron Devices, 2021, 68 (9), pp.4296-4301. ⟨10.1109/TED.2021.3097703⟩ Article dans une revue hal-03508422v1

Communication dans un congrès (2)

Temperature dependence of RF detection performance of GaAs and GaN Schottky barrier diodes Gaudencio Paz-Martínez,Beatriz Orfao E Vale Tabernero,Ignacio Íñiguez-De-La-Torre,Philippe Artillan,Raúl Peñaet al. 15th Spanish Conference on Electron Devices (CDE'25), Jan 2025, Malaga, Spain Communication dans un congrès hal-05499507v1
RF Detection Performance of GaN Devices: Measurements and Modelling Tomas I. Gonzales,Ignacio Íñiguez-De-La-Torre,Gaudencio Paz-Martínez,Beatriz Orfao E Vale Tabernero,Hector Sanchez-Martinet al. 48th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE’25), Jun 2025, Cádiz, Spain Communication dans un congrès hal-05499526v1