
Bruno Grandidier
277
Documents
Publications
Publications
Bottom gated in-plane selective area grown InSb nanowires on GaAs(111)BEuroMBE 2025 Conference, CRHEA, Mar 2025, Auron, France
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Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure23rd European Workshop on Molecular Beam Epitaxy (EuroMBE 2025), Mar 2025, Auron, France
Communication dans un congrès
hal-05039146
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Modulation-Doped InSb Thin Film And Selective Area Grown In-Plane Nanowires on GaAs (111)B SubstratesICMBE2024, Sep 2024, Matsue, Japan
Communication dans un congrès
hal-04936794
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In-plane InAs and InSb nanowires grown by selective area MBEJournées Nationales Nanofils Semiconducteurs (J2N) 2024, C2N, Jun 2024, Palaiseau, France
Communication dans un congrès
hal-04660092
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Selective Area Growth of in-plane In0.5Ga0.5P nanowires on GaAs (111)B substrate by molecular beam epitaxy21st European Workshop on Molecular Beam Epitaxy, EuroMBE 2023, Apr 2023, Madrid, Spain
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hal-04475475
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Characterization of electron transport inside InAs/GaSb quantum nanostructures using four probe scanning tunnelling microscopy23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France
Communication dans un congrès
hal-03613245
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Electric field driven insulator-to-metal transition in GaMo4S8 studied with the Nanoprobe23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France
Communication dans un congrès
hal-03613274
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Characterization of electron transport inside InAs/GaSb quantum nanostructures using four probe scanning tunnelling microscopy2ème édition des Rencontres Jeunes C'Nano Nord-Ouest, RJNO 2022, C'Nano Nord-Ouest, May 2022, En ligne, France
Communication dans un congrès
hal-03663746
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Sonder les phénomènes physiques avec la résolution spatiale et temporelle23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France
Communication dans un congrès
hal-03613280
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High Mobility InAs/GaSb Quantum Well and in-Plane Core-Shell Nanostructures Grown on Highly Mismatched SubstratesICMBE, Sep 2022, Scheffield, United Kingdom
Communication dans un congrès
hal-04334320
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InSb thin films and selective area MBE grown nanostructures on InP(111)B substrateInternational Conference on Molecular Beam Epitaxy (ICMBE) 2022, Sep 2022, Sheffield - UK, France
Communication dans un congrès
hal-04332162
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Charge carriers dynamics in LT-GaAs/GaAs junction23eme forum des microscopies à sondes locales, Mar 2022, Saint-Valery-sur-Somme, France
Communication dans un congrès
hal-03613631
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Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8Strongly Correlated Electron Systems (SCES 2020), Sep 2021, Campinas, Brazil. Journal of Physics: Conference Series, Volume 2164, 012046, 4 p., ⟨10.1088/1742-6596/2164/1/012046⟩
Communication dans un congrès
hal-03753819
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Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8Journées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France
Communication dans un congrès
hal-03606122
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Laser-combined scanning tunneling microscopy on low-temperature grown GaAsJournées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France
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hal-03606048
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Towards III-V semiconductor-based artificial grapheneCompound Semiconductor Week2021, CSW 2021, May 2021, Stockholm, Suède., May 2021, Stockholm, Sweden
Communication dans un congrès
hal-04485771
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Electronic properties of selective area grown semiconductor heterostructuresJournées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France
Communication dans un congrès
hal-03606187
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Electric field driven out of equilibrium insulator to metal transition in Mott insulatorsJournées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France
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hal-03606235
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[Invited] Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, Apr 2021, Chengdu, China. pp.1-3, ⟨10.1109/EDTM50988.2021.9420884⟩
Communication dans un congrès
hal-03261329
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[Invited] Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles34èmes Journées Surfaces & Interfaces, JSI 2020, Jan 2020, Paris, France
Communication dans un congrès
hal-03317736
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Supramolecular self-assembly on semiconductor surfaces and outlookEuropean Materials Research Society, Sep 2019, Warsaw, Poland
Communication dans un congrès
hal-02380785
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Dirac antidot superlattices for electrons in III-V semiconductors37th European Materials Research Society Spring Meeting, E-MRS Spring 2019, May 2019, Nice, France
Communication dans un congrès
hal-04485976
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Nano-probing station incorporating MEMS probes for 1D device RF on-wafer characterization2017 47th European Microwave Conference (EuMC), Oct 2017, Nuremberg, Germany. ⟨10.23919/EuMC.2017.8230973⟩
Communication dans un congrès
hal-01726555
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Transport properties of CdSe nanocrystal superlatticeEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France
Communication dans un congrès
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[Invited] Surface science of semiconductor nanowiresInternational Nano-Optoelectronic Workshop, iNOW 2014, 2014, St. Petersburg, Russia
Communication dans un congrès
hal-01044671
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Architectures supramoléculaires sur la surface de Si(111)-B17ème Forum des Microscopies à Sonde Locale, Mar 2014, Mantauban, France. session 7, papier 25, 68-69
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Electrical characterization of semiconductor nanowires by scanning tunneling microscopySPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩
Communication dans un congrès
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Scanning tunneling microscopy of GaAs nanowires17ème Forum des Microscopies à Sonde Locale, Mar 2014, Montauban, France
Communication dans un congrès
hal-00974534
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Scanning tunneling microscopy of GaAs/GaAsSb nanowiresEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium E - Defect-induced effects in nanomaterials, 2014, Lille, France
Communication dans un congrès
hal-00964089
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Sheet resistance of multi-layer stacking of silicene16ème Forum des Microscopies à Sondes Locales, Mar 2013, Spa, Belgium
Communication dans un congrès
hal-00956275
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Nanoscale transport measurements with multiple probe scanning tunneling microscopy16th International Congress of Metrology, 2013, Paris, France. S20 Nanotechnology, 13001, 4 p., ⟨10.1051/metrology/201313001⟩
Communication dans un congrès
hal-00877775
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Sheet resistance of multi-layer stacking of siliceneScanning Probe Microscopy International Conference, SPM2013, 2nd ImagineNano Event, Apr 2013, Bilbao, Spain
Communication dans un congrès
hal-00819684
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News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinningEuropean Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France
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hal-00819689
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Deterministic placement of doping atoms on hydroxylated surfacesInternational Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩
Communication dans un congrès
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Ionisation par impact dans les jonctions p-n de silicium16ème Forum des Microscopies à Sondes Locales, Mar 2013, Spa, Belgique
Communication dans un congrès
hal-00956271
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Sheet resistance of multi-layer stacking of siliceneEuropean Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium I - The route to post-Si CMOS devices : from high mobility channels to graphene-like 2D nanosheets, 2013, Strasbourg, France
Communication dans un congrès
hal-00819685
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Structural transitions in ordered supramolecular networks on a semiconductor surfaceMaterials Research Society Fall Meeting, MRS Fall 2013, Symposium WW : Self-Organization and Nanoscale Pattern Formation, 2013, Boston, MA, United States
Communication dans un congrès
hal-00944025
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[Invited] Nanoscale transport measurements with multiple probe scanning tunneling microscopyJournées Nationales Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France
Communication dans un congrès
hal-00878826
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Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2013, Sep 2013, Lake Arrowhead, CA, United States
Communication dans un congrès
hal-00956276
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Influence of antimony on III-V nanowires grown by MBE6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia
Communication dans un congrès
hal-00797348
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NCs self-assembly mechanims revisited using advanced transmission electron microscopy15th European Microscopy Congress, EMC 2012, 2012, Manchester, United Kingdom
Communication dans un congrès
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Towards solar cells combining silicon nanopilars and various semiconductor nanoparticlesAmerican Physical Society March Meeting, APS March Meeting 2012, Feb 2012, Boston, MA, United States
Communication dans un congrès
hal-00798195
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STM and STS characterization of PTCDI self assembly on Si(111) Ag surfaceInternational Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France
Communication dans un congrès
hal-00798184
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Modelisation of supra-molecular network on semi-conductor13èmes Journées de la Matière Condensée, JMC13, 2012, Montpellier, France
Communication dans un congrès
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Modelisation of supramolecular network on semiconductor13ème Journées de la Matière Condensée (JMC 13), Aug 2012, Montpellier, France
Communication dans un congrès
hal-00737384
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Electrical transport measurements of individual III-V semiconductor nanowires with reconstructed sidewallsInternational Conference on Nanoscience and Technology, ICN+T 2012, 2012, Paris, France
Communication dans un congrès
hal-00798122
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Étude des propriétés électroniques de nanofils semiconducteurs d'InAs par microscopie à effet tunnel basse température et quatre pointes14ème Forum des Microscopies à Sonde Locale, 2011, Ecully, France
Communication dans un congrès
hal-00807239
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Atom probe investigation of silicon nanowires grown by VLS and IPSLSThematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France
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hal-00591402
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Mesure de l'énergie de Coulomb à l'échelle atomique14ème Forum des Microscopies à Sonde Locale, 2011, Ecully, France
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hal-00807249
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Investigation of dopants in silicon nanowires grown by solid-liquid-solid or vapor-liquid-solid2èmes Journées Nanosciences et Nanotechnologies du C'nano Nord-Ouest, J2NO 2011, 2011, Rouen, France
Communication dans un congrès
hal-00807251
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Charge generation efficiency of core-shell Si nanowires2èmes Journées Nanosciences et Nanotechnologies du C'nano Nord-Ouest, J2NO 2011, 2011, Rouen, France
Communication dans un congrès
hal-00807231
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Growth of antimony-containing heterostructure nanowires by molecular beam epitaxy : crystal phase control, surfaces and interfacesMaterials Research Society Spring Meeting, MRS Spring 2011, Symposium EE : Semiconductor nanowires - From fundamentals to applications, Apr 2011, San Francisco, CA, United States
Communication dans un congrès
hal-00807152
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Combined STM and four-probe resistivity measurements on single semiconductor nanowires1st AtMol International Workshop on Atomic Scale Interconnection Machine, Jun 2011, Singapore, Singapore. pp.107-118, ⟨10.1007/978-3-642-28172-3_8⟩
Communication dans un congrès
istex
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Coulomb energy determination of a single Si dangling bondHerodot Summer School, 2011, Cargese, France
Communication dans un congrès
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NanobiodetectorsThematic Days on Nanowires and Applications, GDR 2974, 2011, Villeneuve d'Ascq, France
Communication dans un congrès
hal-00591405
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Electrical and structural properties of as-grown core-shell silicon nanowiresWorkshop on Semiconductor Nanostructures for Photovoltaics, Dec 2011, Hangzhou, China
Communication dans un congrès
hal-00807241
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Electrical transport measurements and topography of III-V semiconductor nanowires by four probe and low temperature scanning tunneling microscopyMaterials Research Society Fall Meeting, MRS Fall 2011, Symposium BB : Semiconductor nanowires for photovoltaics, 2011, Boston, MA, United States
Communication dans un congrès
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Coulomb energy determination of a single Si dangling bondWorkshop on Statistical Physics and Low Dimensional Systems, SPLDS 2011, 2011, Nancy, France
Communication dans un congrès
hal-00807228
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Efficient photogeneration of long-lived charge carriers in core-shell silicon nanowiresEuropean Materials Research Society Spring Meeting, E-MRS Spring 2011, Symposium I : Transport and photonics in Si-based nanodevices, 2011, Nice, France
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hal-00807240
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Electrical transport measurements and topography of semiconductor nanowires by four probe and low temperature scanning tunneling microscopyHerodot Summer School, 2011, Cargese, France
Communication dans un congrès
hal-00807584
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Electrical transport measurements and topography of III-V semiconductor nanowires by four probe and low temperature scanning tunneling microscopy4th Plenary Workshop of GdR Nanofils Semiconducteurs, 2011, Porquerolles, France
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hal-00807242
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Four-point probe measurements at the nanoscaleHerodot Summer School, 2011, Cargese, France
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hal-00807585
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Atomic analyzis and photocurrent studies of isolated sub-100 nm diameter silicon nanowiresAmerican Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
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hal-00579044
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Advanced SEM and TEM investigations of individual and self-assembled colloidal PbSe nanocrystals3rd International Conference on Nanostructures Self-Assembly, NanoSEA 2010, 2010, _, France
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hal-00574127
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Band offsets in PbSe/CdSe core-shell nanocrystalsNanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany
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hal-00574408
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Four-probe electrical transport measurements on individual inorganic nanowiresWorkshop on New trends in Electrical Scanning Probe Microscopies, 2010, Grenoble, France
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Morphology of <111>-oriented Si nanowire and its physical originAmerican Physical Society March Meeting, APS 2010 March Meeting, 2010, _, France
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Development of semi-conductor nanoparticle systems for a new hybrid Si-nanowire solar cell30th European Congress of Molecular Spectroscopy, EUCMOS 2010, 2010, Florence, Italy
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Scanning tunneling microscopy of semiconductor nanowire6èmes Journées Franco-Russes, 2010, Paris, France
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Efficient photogeneration of long-lived charge carriers in core-shell silicon nanowires5th International Meeting on Molecular Electronics, ElecMol'10, 2010, Grenoble, France
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Band offsets in PbSe/CdSe core/shell nanocrystalsInternational Conference, Apr 2010, Munich, Germany
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hal-00496509
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Resolving dopants in semiconductors by scanning tunneling microscopyJournées Thématiques du GdR Nanofils Semiconducteurs - Dopage des nanofils semiconducteurs, 2010, Rouen, France
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hal-00808236
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Electronic structure of PbSe/CdSe core/shell quantum dots and the effect of an added shell10th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, BIAMS 2010, 2010, Halle, Germany
Communication dans un congrès
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Experimental determination of band offsets in PbSe/CdSe core/shell nanocrystals by ultra-violet photoelectron spectroscopy (UPS)The 5th SOLEIL Users' Meeting, Jan 2010, Palaiseau, France
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Semiconductor nanoparticles for photovoltaicsXXII International Conference on Raman Spectroscopy, ICORS 2010, 2010, United States. pp.51-52, ⟨10.1063/1.3482650⟩
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Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomographyNanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32
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Band offsets in PbSe/CdSe core/shell nanocrystalsSoleil User's Meeting 2010, 2010, Saclay, France
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Photoelectron spectroscopy and structural modification of PbSe/CdSe core/shell quantum dots (QDs)5th Soleil User's Meeting, SUM10, 2010, Palaiseau, France
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The use of Langmuir-Blodgett films of PbSe/CdSe quantum dots for the determination of the PbSe/CdSe band alignment11th Trends in Nanotechnology International Conference, TNT2010, 2010, Braga, Portugal
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STM/STS characterization of PTCDI/melamine self assembly on Si(111) √3×√3 Ag surface30th European Congress of Molecular Spectroscopy, EUCMOS 2010, 2010, Florence, Italy
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Electronic structure of PbSe/CdSe core/shell nanocrystals revealed by scanning tunneling- and photo- electron spectroscopiesForum des Microscopies à Sonde Locale, 2010, Mittelwihr, France
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Electronic structure of PbSe/CdSe core/shell nanocrystals revealed by scanning tunneling- and photo- electron spectroscopiesMicroscopies à Sonde Locale, Mar 2010, Mittelwihr, France
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Atomic structure of Si nanowiresIAP 'Brunch' Workshop on Semiconductor Nanowires, 2009, Leuven, Belgium
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Caractérisation de défauts atomiques uniques dans un semiconducteurJournées Nanomicrotechnologies : Surfaces et nanostructures - Analyses, mesures et modélisations, 2009, Paris, France
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Caractérisation électrique de défauts ponctuels atomiques uniques dans un semi-conducteurJournées Nanomicrotechnologies, 2009, Paris, France
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Atomic scale structure of Si nanowireInternational Conference on Nanoscience and Technology, ChinaNANO 2009, 2009, Beijing, China
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Nanocristaux de chalcogénures de plomb : synthèse, caractérisation et applications10èmes Journées Francophones des Jeunes Physico-Chimistes, Oct 2009, Ambleteuse, France
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HRTEM, HAADF and HR-EELS investigations of colloidal PbSe nanoparticles.Congrès Société Française de Microscopie 2009, Jun 2009, PARIS, France
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Nanobiodetector4èmes Journées Nationales en Nanosciences et Nanotechnologies, J3N 2009, 2009, Toulouse, France
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Contribution à l'élargissement des pics de résonance de boîtes quantiques PbSe étudiées par spectroscopie tunnelForum des Microscopies à Sonde Locale, 2009, Hardelot, France
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Origin of the morphology for <111>-oriented Si nanowires4th Nanowire Growth Workshop, NWG 2009, 2009, Paris, France
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Atomic structures of Si nanowire facetted sidewallsForum des Microscopies à Sonde Locale, 2009, Hardelot, France
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Crystal structure determination and band gap measurement of PbSe nanoparticlesInternational EELS-Workshop, May 2009, Banff, Canada
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Creating quantum dots for applications in opto-electronicsInternational Conference on Advanced Vibrational Spectroscopy, Jul 2009, Melbourne, Australia
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HR-TEM, HAADF and HR-EELS investigation of colloidal PbSe nanoparticles11ème Colloque de la Société Française des Microscopies, 2009, Paris, France
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Catalyst : platinum replaces goldInternational Conference for NanoTechnology Industries, ICNI 2009, 2009, Riyadh, Saudi Arabia
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Atomic scale structure of Si nanowireAmerican Physical Society March Meeting, 2009 APS March Meeting, 2009, Pittsburgh, PA, United States
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Structures atomiques des facettes sur les nanofils de silicium11ème Colloque de la Société Française des Microscopies, 2009, Paris, France
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HAADF and HR-EELS investigation HRTEM, HAADF and HR-EELS investigation of colloidal PbSe nanoparticles11eme Colloque de la Société Française des Microscopies, Jun 2009, Paris, France
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hal-00496461
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Titan-cubed investigations of PbSe colloidsInternational Electron Energy Loss Spectroscopy Meeting, 'Enhanced Data Generated by Electrons', EDGE 2009, 2009, Banff, Alberta, Canada
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Organometallic synthesis and characterization of spherical PbSe nanocrystals (NCs)Croissance de nano-objets métalliques et semi-conducteurs dans des matrices diélectriques destinées aux applications optiques, Nov 2008, Villeneuve d'Ascq, France
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[Invité] Caractérisation électrique de défauts atomiques uniques dans un semi-conducteurJournées Nationales en Nanosciences et Nanotechnologies, J3N 2008, 2008, Grenoble, France
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Raman spectra of quasi-spherical PbSe nanocrystalsXXI International Conference on Raman Spectroscopy, ICORS 2008, 2008, Uxbridge, United Kingdom
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hal-00362017
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesEcole thématique du CNRS ‘Nanoobjects in living cell, from physics to physiology', 2008, Villeneuve d'Ascq, France
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hal-00362018
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesAmerican Chemical Society National Meeting, 2008, New Orleans, LA, United States
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hal-00362015
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Electronic coupling in molecular aggregates and 2D assemblies of PbSe quantum dots3rd Conference on Nanoscience with Nanocrystals, NaNaX 3, 2008, Lecce, Italy
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hal-00361978
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Raman spectra of quasi-spherical PbSe nanocrystalsJournées C'nanoNO, Oct 2008, Poitiers, France
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hal-00335634
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Synthesis, self-assembly and Raman studies of PbSe nanocrystalsJournées Nord-Ouest Européennes des Jeunes Chercheurs (JNOEJC), Jun 2008, Villeneuve d'Ascq, France
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hal-00332467
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Localized growth and characterisation of silicon nanowires9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, BIAMS 2008, 2008, Toledo, Spain
Communication dans un congrès
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Raman spectra of quasi-spherical PbSe nanocrystalsXXIth International Conference on Raman Spectroscopy, Aug 2008, Londres, United Kingdom
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hal-00335632
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Tunneling spectroscopy of semiconductor nanocrystals in superlatticesWorkshop on Statistical Physics and Low Dimensional Systems, 2008, Nancy, France
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hal-00362016
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Use of spectroscopic techniques for synthesis optimisation and for the characterization of optical properties of semiconductor nanoparticlesXXIXth European Congress on Molecular Spectroscopy, Aug 2008, Opatija, Croatia
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hal-00335637
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Etude des mécanismes de la croissance et du dopage de nanofils de silicium1ères Journées Nanosciences Nord-Ouest, J2NO 2008, 2008, Poitiers, France
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hal-00361981
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Elaboration de nanofils de silicium sur pointes de tungstène pour caractérisation en sonde atomique et microscopie champ proche1ères Journées Nanosciences Nord-Ouest, J2NO 2008, 2008, Poitiers, France
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hal-00361980
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Organometallic synthesis and characterization of spherical PbSe nanocrystals (NCs)Ecole thématique ‘Croissance de nano-objets métalliques et semi-conducteurs dans des matrices diélectriques destinées aux applications optiques', 2008, Villeneuve d'Ascq, France
Communication dans un congrès
hal-00361982
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Bipolar transport in semiconductor nanocrystals4th International Conference on Scanning Probe Spectroscopy and 1st International Workshop on Spin-Polarized Scanning Tunneling Microscopy, SPS'06 SPSTM-1, 2006, Hamburg, Germany
Communication dans un congrès
hal-00127868
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Running current through a single non resonant quantum state in silicon4th International Conference on Scanning Probe Spectroscopy and 1st International Workshop on Spin-Polarized Scanning Tunneling Microscopy, SPS'06 SPSTM-1, 2006, Hamburg, Germany
Communication dans un congrès
hal-00127890
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Etudier des nanostructures découplées du substrat : un paradoxe pour la microscopie à effet tunnelEcole de Science des Surfaces, 2006, Porquerolles, France
Communication dans un congrès
hal-00127917
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Réseau organique, atome artificiel et liaison pendante silicium : apport de la spectroscopie STM10èmes Journées de la Matière Condensée, JMC10, 2006, Toulouse, France
Communication dans un congrès
hal-00127920
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Electronic coupling in two-dimensional arrays of PbSe nanocrystals4th International Conference on Scanning Probe Spectroscopy and 1st International Workshop on Spin-Polarized Scanning Tunneling Microscopy, SPS'06 SPSTM-1, 2006, Hamburg, Germany
Communication dans un congrès
hal-00127891
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Running current through a single non resonant quantum state in siliconEuropean Conference on Surface Science, ECOSS 24, 2006, Paris, France
Communication dans un congrès
hal-00127916
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Synthesis of Si-based nanowires by solid-liquid phase growthGDR Nanofils, 2006, Villeneuve d'Ascq, France
Communication dans un congrès
hal-00127914
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Variable electronic coupling in two-dimensional arrays of PbSe nanocrystals measured by scanning tunnelling spectroscopyInternational Conference on Nanosciences and Technology, ICN+T 2006, 2006, Basel, Switzerland
Communication dans un congrès
hal-00127915
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Spectroscopie électronique de boîtes quantiques et de nanocristaux semi-conducteursGDR Physique Quantique Mésoscopique, 2006, La Grande Motte, France
Communication dans un congrès
hal-00127918
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Electrical coupling in two-dimensional arrays of PbSe nanocrystalsMaterials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States
Communication dans un congrès
hal-00126438
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Interactions moléculaires de PTCDA sur Pd(111)Forum des microscopies à champ proche, 2005, Anglet, France
Communication dans un congrès
hal-00126445
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Semiconductor surface reconstructions of the Si(100) surface at 5K52nd International Symposium and Exhibition of the American Vacuum Society, AVS-52, 2005, Boston, MA, United States
Communication dans un congrès
hal-00126447
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Acceptor states in GaAs studied by X-STS at 5K13th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, STM'05, 2005, Sapporo, Japan
Communication dans un congrès
hal-00126437
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Molecular interactions of PTCDA on Si(100) and H-Si(100) surfaces : towards self-assembled molecular nanocristalsMaterials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States
Communication dans un congrès
hal-00126448
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Etude par microscopie à effet tunnel de nanocristaux de PTCDA sur Si(100) et H-Si(100)Forum des microscopies à champ proche, 2005, Anglet, France
Communication dans un congrès
hal-00126436
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Semicarbazide-functionalized Si (111) surfaces for the site-specific immobilisation of peptides229th American Chemical Society National Meeting, 2005, San Diego, CA, United States
Communication dans un congrès
hal-00126444
v1
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Study of titanium silicides nanowires on Si(111) by scanning tunnelling microscopyGDR Nanoélectronique - Journées Matériaux Semi-conducteurs pour Nanostructures, 2005, Villeneuve d'Ascq, France
Communication dans un congrès
hal-00126446
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Adsorption of PTCDA on Si(100) and Si(100)-HNSTI Nanotechnology Conference and Trade Show, 2004, United States. pp.3/383-386
Communication dans un congrès
hal-00248093
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Unusual density of states in brick-shaped PbSe nanocrystalsAmerican Physical Society March Meeting, 2003, Austin, TX, United States
Communication dans un congrès
hal-00146641
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Scanning tunnelling spectroscopy of low dimensional semiconductor system7th International Workshop on Beam Induced Assessment of Microstructures in Semiconductors, BIAMS 2003, 2003, Lille, France
Communication dans un congrès
hal-00146647
v1
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Etude par microscopie à effet tunnel de la passivation hydrogène des dopants silicium dans GaAsForum des microscopies à sonde locale, 2001, Marseille, France
Communication dans un congrès
hal-00152513
v1
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Hydrogen passivation and local electron-beam reactivation of silicon dopants in GaAs characterized by differential conductance and STM spectroscopy measurements11th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Techniques, STM 2001, 2001, Vancouver, Canada
Communication dans un congrès
hal-00152579
v1
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Cross-sectional surface structure of III-V heterostructures by scanning tunneling microscopyNanoparticles in Materials Science, Franco-American Workshop, 2001, Chicago, United States
Communication dans un congrès
hal-00152582
v1
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Hydrogen passivation and local electron-beam reactivation of Silicon dopants in GaAs characterized by differential conductance and STM spectroscopy measurements11th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, 2001, Vancouver, Canada
Communication dans un congrès
hal-00152514
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Structural and electronic studies of InAs quantum dots embedded in GaAs by scanning tunneling microscopyAlaska Meeting on Fundamental Optical Properties in Semiconductors, 2001, Girdwood, AK, United States
Communication dans un congrès
hal-00152583
v1
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Réactivation par injection électronique des donneurs Si dans le GaAs hydrogéné ou deutéré8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France
Communication dans un congrès
hal-00152537
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Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si (100) surfaceProceedings of the 47th International Symposium of the American Vacuum Society, AVS 2000, 2000, Boston, MA, United States
Communication dans un congrès
hal-00158959
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Scanning tunneling microscopy based lithography in UHV5th MEL-ARI/NID Workshop, 2000, Pise, Italy
Communication dans un congrès
hal-00158944
v1
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Growth of metallic TaSe2 on GaP(111)B substrates23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan.
Poster de conférence
hal-04730929
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Molecular beam epitaxy of TaSe2 on GaP(111)BColloque du GDR/GDR-I HOWDI, May 2023, Porquerolles, France.
Poster de conférence
hal-04118157
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Scanning tunneling microscopy and spectroscopy of semiconductor materialsBhattacharya P., Fornari R., Kamimura H. Comprehensive semiconductor science and technology, Elsevier, pp.Volume 4, 262-286, 2011
Chapitre d'ouvrage
hal-00591735
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Porte logique constituée d'un canal conducteur fortement dopé et gravé localementN° de brevet: FR2995450 (A1). 2014
Brevet
hal-00959875
v1
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Modelling Of Supramolecular Network Deposited On A Semiconductor Surface2013
Autre publication scientifique
hal-00941972
v1
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De la physique de nanostructures semi-conductrices et organiques à l'élaboration d'interfaces bioréactives2005
Autre publication scientifique
hal-00138589
v1
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Iuliacumite: a novel two-dimensional chemical short range order in a wurtzite single monolayer InAs 1-x Sb x shell on InAs nanowires2019
Pré-publication, Document de travail
hal-02376359
v1
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Single-electron tunneling PbS/InP neuromorphic computing building blocks2019
Pré-publication, Document de travail
hal-02394922
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