Catherine BRU CHEVALLIER

Documents

Publications

	Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate Mohamed Helmi Hadj Alouane , Olfa Nasr , Hammadi Khmissi , Bouraoui Ilahi , Gilles Patriarche Journal of Luminescence, 2021, 231, pp.117814. ⟨10.1016/j.jlumin.2020.117814⟩ Journal articles hal-03040324v1
	Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material O. Nasr , Nicolas Chauvin , H. Hadj Alouane M , H. Maaref , C. Bru-Chevallier Journal of Optics, 2017, 19, pp.025401. ⟨10.1088/2040-8986/aa52d6⟩ Journal articles hal-01701515v1
	Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency Maher Ezzedini , Tarek Hidouri , Mohamed Helmi Hadj Alouane , Amor Sayari , Elsayed Shalaan Nanoscale Research Letters, 2017, 12 (1), ⟨10.1186/s11671-017-2218-2⟩ Journal articles hal-01735294v1
	Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing Bouraoui Ilahi , Olfa Nasr , Bernard Paquette , H. Hadj Alouane , Nicolas Chauvin Journal of Alloys and Compounds, 2016, 656, pp.132-137. ⟨10.1016/j.jallcom.2015.09.231⟩ Journal articles hal-01918155v1
	Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires Roman Anufriev , Jean-Baptiste Barakat , G. Patriarche , Xavier Letartre , C. Bru-Chevallier Nanotechnology, 2015, 26, pp.395701. ⟨10.1088/0957-4484/26/39/395701⟩ Journal articles hal-01489428v1
	Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate. Roman Anufriev , Nicolas Chauvin , Hammadi Khmissi , Khalid Naji , G. Patriarche Applied Physics Letters, 2014, 104, pp.183101. ⟨10.1063/1.4875276⟩ Journal articles hal-01489881v1
	Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN N. Benyahya , H. Mazari , N. Benseddik , Z. Benamara , M. Mostefaoui Optical and Quantum Electronics, 2014, 46 (1), pp.209 - 219. ⟨10.1007/s11082-013-9747-4⟩ Journal articles hal-01901693v1
	Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped R. Khelifi , H. Mazari , S. Mansouri , Z. Benamara , M. Mostefaoui Sensors & Transducers., 2014, 27, pp.217 Journal articles hal-01149661v1
	Excitonic properties of wurtzite InP nanowires grown on silicon substrate M H Hadj Alouane , Nicolas Chauvin , H Khmissi , K Naji , B Ilahi Nanotechnology, 2013, 24 (3), ⟨10.1088/0957-4484/24/3/035704⟩ Journal articles hal-01734647v1
	Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates Roman Anufriev , Nicolas Chauvin , Hammadi Khmissi , Khalid Naji , Gilles Patriarche physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2013, 7 (10), pp.878-881. ⟨10.1002/pssr.201307242⟩ Journal articles hal-01988420v1
	Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell Maher Ezzdini , Bilel Azeza , Saoussen Rekaya , Mohamed Helmi Hadj Alouane , Larbi Sfaxi International Journal of Nanotechnology, 2013, 10 (5/6/7), ⟨10.1504/IJNT.2013.053514⟩ Journal articles hal-01735303v1
	Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths Roman Anufriev , Nicolas Chauvin , H. Khmissi , K. Naji , J.B. Barakat Journal of Applied Physics, 2013, 113 (19), ⟨10.1063/1.4804327⟩ Journal articles hal-01735112v1
	Comparative study of electrical parameters of Au/GaN and Hg/GaN Schottky diodes Khelifi R. , Mazari H. , Mansouri S. , Ameur K. , Benamara Z. Journal of Optoelectronics and Advanced Materials, 2013, 15 (5-6), pp.471-474 Journal articles hal-01901721v1
	Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics H. Chouaib , C. Bru-Chevallier Applied Physics Letters, 2012, 100 (17), ⟨10.1063/1.4705408⟩ Journal articles hal-01901728v1
	InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates H. Khmissi , K. Naji , M. H. Hadj Alouane , Nicolas Chauvin , C. Bru-Chevallier Journal of Crystal Growth, 2012, 344 (1), pp.45 - 50. ⟨10.1016/j.jcrysgro.2012.01.038⟩ Journal articles hal-01735120v1
	Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates Nicolas Chauvin , M. Hadj Alouane , R. Anufriev , H. Khmissi , K. Naji Applied Physics Letters, 2012, 100 (1), ⟨10.1063/1.3674985⟩ Journal articles hal-01735186v1
	Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires Roman Anufriev , Nicolas Chauvin , Hammadi Khmissi , Khalid Naji , Michel Gendry Applied Physics Letters, 2012, 101 (7), ⟨10.1063/1.4745608⟩ Journal articles hal-01735117v1
	Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots C. Bru-Chevallier , L. Bouzaïene , L. Sfaxi , M. Baira , H. Maaref Journal of Nanoparticle Research, 2011, 13 (1), pp.257 - 262. ⟨10.1007/s11051-010-0024-1⟩ Journal articles hal-01731927v1
	InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates C. Bru-Chevallier , A. El Akra , David Pelloux-Gervais , H. Dumont , B. Canut Journal of Nanoscience and Nanotechnology, 2011, 11 (10), pp.9153-9159. ⟨10.1166/jnn.2011.4282⟩ Journal articles hal-01735321v1
	Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates Rekaya S. , Sfaxi L. , C. Bru-Chevallier , Maaref H. Journal of Luminescence, 2011, 131, pp.7-11 Journal articles hal-01901841v1
	Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate M Hadj Alouane , R. Anufriev , Nicolas Chauvin , H Khmissi , K. Naji Nanotechnology, 2011, 22 (40), ⟨10.1088/0957-4484/22/40/405702⟩ Journal articles hal-01735193v1
	Strain dependence of the direct energy bandgap in thin silicon on insulator layers J Munguía , J-M Bluet , H Chouaib , G Bremond , Michel Mermoux Journal of Physics D: Applied Physics, 2010, 43 (25), pp.255401. ⟨10.1088/0022-3727/43/25/255401⟩ Journal articles hal-00569631v1
	Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage W. Chikhaoui , J.-M. Bluet , M.-A. Poisson , N. Sarazin , C. Dua Applied Physics Letters, 2010, 96 (7), ⟨10.1063/1.3326079⟩ Journal articles hal-01901750v1
	Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction H. Khmissi , L. Sfaxi , L. Bouzaïene , F. Saidi , H. Maaref Journal of Applied Physics, 2010, 107 (7), ⟨10.1063/1.3371356⟩ Journal articles hal-01901770v1
	Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001) Jinquan Cheng , Thomas Aviles , Ahiram El Akra , C. Bru-Chevallier , Ludovic Largeau Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩ Journal articles hal-01901801v1
	Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP H. Chouaib , C. Bru-Chevallier , A. Apostoluk , W. Rudno-Ruzinski , J. L. Pelouard Physica Status Solidi A (applications and materials science), 2009, 206, pp.786 Journal articles hal-01902088v1
	Deep levels investigation of AlGaN/GaN heterostructure transistors W. Chikhaoui , J.M. Bluet , Pascal Girard , G. Bremond , C. Bru-Chevallier Physica B: Condensed Matter, 2009, 404 (23-24), pp.4877 - 4879. ⟨10.1016/j.physb.2009.08.231⟩ Journal articles hal-01901823v1
	Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs Nathalie Malbert , Nathalie Labat , Arnaud Curutchet , Charlotte Sury , Virginie Hoel Microelectronics Reliability, 2009, 49 (9-11), pp.1216-1221. ⟨10.1016/j.microrel.2009.07.015⟩ Journal articles hal-00401267v1
	UV photoreflectance spectroscopy in strained silicon on insulator structures J. Munguía , J.M. Bluet , H. Chouaib , G. Bremond , C. Bru-Chevallier Physica Status Solidi A (applications and materials science), 2009, 206, pp.821 Journal articles hal-01902071v1
	Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots M. Baira , L. Bouzaïene , L. Sfaxi , H. Maaref , O. Marty Journal of Applied Physics, 2009, 105 (9), ⟨10.1063/1.3122003⟩ Journal articles hal-01902104v1
	Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates Houssam Chouaib , C. Bru-Chevallier , Aleksandra Apostoluk , Wojciech Rudno-Rudzinski , Melania Lijadi Applied Physics Letters, 2008, 93 (4), ⟨10.1063/1.2959829⟩ Journal articles hal-01902121v1
	Extraction of ultraviolet emitting silicon species from strongly hydrogenated nanoporous silicon V. Lysenko , V. Onyskevych , O. Marty , V. Skryshevsky , Y. Chevolot Applied Physics Letters, 2008, 92 (25), ⟨10.1063/1.2948955⟩ Journal articles hal-01902208v1
	Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates S. Rekaya , L. Sfaxi , L. Bouzaïene , H. Maaref , C. Bru-Chevallier Materials Science and Engineering: C, 2008, 38, pp.906-909 Journal articles hal-01902217v1
	Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule M. Baira , L. Sfaxi , L. Bouzaïene , H. Maaref , Nicolas Chauvin Journal of Applied Physics, 2008, 104 (6), ⟨10.1063/1.2968238⟩ Journal articles hal-01902111v1
	Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration Houssam Chouaib , C. Bru-Chevallier Applied Physics Letters, 2007, 90 (26), ⟨10.1063/1.2751591⟩ Journal articles hal-01902222v1
	Optical strain measurement in ultrathin sSOI wafers. J. Munguía , H. Chouaib , J. de La Torre , G. Bremond , C. Bru-Chevallier Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253, pp.18. ⟨10.1016/j.nimb.2006.10.007⟩ Journal articles hal-01902421v1
	Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3 μm Nicolas Chauvin , M. Baira , C. Bru-Chevallier , B. Ilahi , L. Sfaxi physica status solidi (c), 2006, 3 (11), pp.3672 - 3675. ⟨10.1002/pssc.200671614⟩ Journal articles hal-01902477v1
	Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm H. Chouaib , Nicolas Chauvin , C. Bru-Chevallier , Christelle Monat , P. Regreny Applied Surface Science, 2006, 253 (1), pp.90 - 94. ⟨10.1016/j.apsusc.2006.05.081⟩ Journal articles hal-01902530v1
	Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) E. Dupuy , P. Regreny , Y. Robach , M. Gendry , Nicolas Chauvin Applied Physics Letters, 2006, 89 (12), ⟨10.1063/1.2354010⟩ Journal articles hal-01902435v1
	Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots Nicolas Chauvin , B. Salem , G. Bremond , G. Guillot , C. Bru-Chevallier Journal of Applied Physics, 2006, 100 (7), ⟨10.1063/1.2353896⟩ Journal articles hal-01902442v1
	Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001) Nicolas Chauvin , E. Tranvouez , G. Bremond , G. Guillot , C. Bru-Chevallier Nanotechnology, 2006, 17 (8), pp.1831-1834. ⟨10.1088/0957-4484/17/8/004⟩ Journal articles hal-01902515v1
	Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs/InP(001) quantum dot G. Saint-Girons , Nicolas Chauvin , A. Michon , G. Patriarche , G. Beaudoin Applied Physics Letters, 2006, 88 (13), pp.133101. ⟨10.1063/1.2185008⟩ Journal articles hal-01902486v1
	Photoreflectance study at the micrometer scale C. Bru-Chevallier , H. Chouaib , A. Bakouboula , Taha Benyattou Applied Surface Science, 2006, 253 (1), pp.194 - 199. ⟨10.1016/j.apsusc.2006.05.085⟩ Journal articles hal-01902537v1
	Toward long wavelength low density InAs/GaAs quantum dots B. Ilahi , L. Sfaxi , E. Tranvouez , G. Bremond , M. Baira Physics Letters A, 2006, 357, pp.360 Journal articles hal-01902366v1
	InAs/InP quantum dots: from single to coupled dots applications Charles Cornet , Andrei Schliwa , Manus Hayne , Nicolas Chauvin , François Doré physica status solidi (c), 2006, 3 (11), pp.4039. ⟨10.1002/pssc.200671623⟩ Journal articles hal-00491717v1
	Shape and size effects on multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate Nicolas Chauvin , G. Bremond , C. Bru-Chevallier , E. Dupuy , P. Regreny physica status solidi (c), 2006, 3 (11), pp.3912 - 3915. ⟨10.1002/pssc.200671615⟩ Journal articles hal-01902472v1
	Photoreflectance study of GaAsSb/InP heterostructures Houssam Chouaib , C. Bru-Chevallier , G. Guillot , H. Lahreche , P. Bove Journal of Applied Physics, 2005, 98 (12), pp.123524. ⟨10.1063/1.2142099⟩ Journal articles hal-01975903v1
	Photoreflectance on wide bandgap nitride semiconductors C. Bru-Chevallier , S. Fanget , A. Philippe Physica Status Solidi A (applications and materials science), 2005, 202 (7), pp.1292-1299 Journal articles hal-01975909v1
	MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers V. Celibert , Erwan Tranvouez , G. Guillot , C. Bru-Chevallier , L. Grenouillet Journal of Crystal Growth, 2005, 275 (1-2), pp.e2313-e2319. ⟨10.1016/j.jcrysgro.2004.11.370⟩ Journal articles hal-01976052v1
	Micro-photoluminescence study of single self-organized InAs/InP quantum sticks Nicolas Chauvin , Bassem Salem , C. Bru-Chevallier , T. Benyatou , Gérard Guillot Materials Science and Engineering: C, 2005, 25, pp.650-653. ⟨10.1016/j.msec.2005.06.023⟩ Journal articles hal-01975987v1
	Photoluminescence studies of stacked InAs/InP quantum sticks Nicolas Chauvin , B. Salem , G. Bremond , C. Bru-Chevallier , G. Guillot Journal of Crystal Growth, 2005, 275 (1-2), pp.e2327-e2331. ⟨10.1016/j.jcrysgro.2004.11.372⟩ Journal articles hal-01976042v1
	Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001) P. Miska , J. Even , C. Platz , B. Salem , T. Benyattou Journal of Applied Physics, 2004, 95 (3), pp.1074-1080. ⟨10.1063/1.1638890⟩ Journal articles hal-01976127v1
	From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) Michel Gendry , Christelle Monat , J. Brault , P. Regreny , G. Hollinger Journal of Applied Physics, 2004, 95 (9), pp.4761-4766 Journal articles hal-01976064v1
	Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors C. Bru-Chevallier , Houssam Chouaib , J. Arcamone , Taha Benyattou , H. Lahreche Thin Solid Films, 2004, 450 (1), pp.151-154 Journal articles hal-01976075v1
	Evidence of excited levels in self-organized InAs/InP(001) islands with low size dispersion B. Salem , G. Bremond , T. Benyattou , C. Bru-Chevallier , G. Guillot Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.124-126. ⟨10.1016/S1386-9477(02)00742-7⟩ Journal articles hal-02090522v1
	Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm Vincent Célibert , Bassem Salem , Gérard Guillot , Catherine Bru-Chevallier , Laurent Grenouillet MRS Online Proceedings Library, 2003, Materials Research Society Symposium - Proceedings, 794, pp. 207-212. ⟨10.1557/PROC-799-Z7.8/T7.8⟩ Journal articles hal-02353320v1
	Growth and optical properties of GaN/AlN quantum wells C. Adelmann , E. Sarigiannidou , D. Jalabert , Y. Hori , J.-L. Rouvière Applied Physics Letters, 2003, 82 (23), pp.4154-4156. ⟨10.1063/1.1581386⟩ Journal articles hal-01975920v1
	Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001) B. Salem , T. Benyattou , G. Guillot , C. Bru-Chevallier , G. Bremond Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66 (19), ⟨10.1103/PhysRevB.66.193305⟩ Journal articles hal-02165341v1
	AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE Laurent Auvray , H. Dumont , J. Dazord , Y. Monteil , Jean Bouix Journal of Crystal Growth, 2000, 221, pp.475-480 Journal articles hal-01118274v1
	MOVPE growth of GaAsN : surface study by AFM and optical properties Laurent Auvray , H. Dumont , J. Dazord , Y. Monteil , Jean Bouix Materials Science in Semiconductor Processing, 2000, 3, pp.505-509 Journal articles hal-01118272v1
	Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well L. Grenouillet , C. Bru-Chevallier , G. Guillot , P. Gilet , P. Duvaut Applied Physics Letters, 2000, 76 (16), pp.2241 - 2243. ⟨10.1063/1.126308⟩ Journal articles hal-01928830v1
	Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates Stéphane Monéger , Americo Tabata , C. Bru-Chevallier , G. Guillot , A. Georgakilas Applied Physics Letters, 1993, 63 (12), pp.1654-1656 Journal articles hal-01977121v1
	Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length P. Dollfus , C. Bru , P. Hesto Journal of Applied Physics, 1993, 73 (2), pp.804-812. ⟨10.1063/1.353341⟩ Journal articles hal-01977076v1
	Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures Pierre Dansas , Daniel Pascal , C. Bru-Chevallier , S. Laval , L. Giraudet Journal of Applied Physics, 1990, 67 (3), pp.1384-1388 Journal articles hal-01977062v1
	Accurate analytical determination of the resistance of a semiconducting layer between two coplanar electrodes Daniel Pascal , Pierre Dansas , C. Bru-Chevallier , Suzanne Laval Semiconductor Science and Technology, 1989, 4, pp.633-638 Journal articles hal-01977042v1
	Evidence for acceptor surface states in GaAs planar-type devices P. Dansas , M. Bouchemat , C. Bru-Chevallier , Daniel Pascal , Suzanne Laval Solid-State Electronics, 1988, 31, pp.1327-1333 Journal articles hal-01977025v1
	Surface space charge effects in planar submicrometer GaAs and InP devices C. Bru-Chevallier , Patrice de Carné , P. Dansas , Daniel Pascal , Michel Rousseau IEEE Transactions on Electron Devices, 1987, ED34 (8), pp.1611-1616 Journal articles hal-01977000v1
	MESFET GaAs à grille interrompue. Analyse du fonctionnement pour la photo-détection D. Pascal , P. Dansas , C. Bru , S. Laval Revue de Physique Appliquée, 1987, 22 (8), pp.931-934. ⟨10.1051/rphysap:01987002208093100⟩ Journal articles jpa-00245634v1

	Optical anisotropy in single InAs/InP quantum dot and quantum rod nanowires Roman Anufriev , Jean-Baptiste Barakat , G. Patriarche , Xavier Letartre , Philippe Regreny Nanowires 2015, 2015, Barcelone, Spain Conference papers hal-01489572v1
	Optical characterization of wavelength tunable InAs QDs with (In)GaAs surrounding material O. Nasr , H. Hadj Alouane M , Nicolas Chauvin , H. Maaref , F. Hassen 5th International Conference on Nanostructures SElf-Assembly, 2014, Marseille, France Conference papers hal-01489844v1
	Control of In droplets for self-catalyzed growth of InP nanowires by VLS-MBE on silicon substrates Hervé Dumont , Jean-Baptiste Barakat , Djawhar Ferrah , Geneviève Grenet , Philippe Regreny CSW 2014, 2014, Montpellier, France Conference papers hal-01489939v1
	Impact of the 1D nature of InP based nanowires on their optical properties Nicolas Chauvin , Roman Anufriev , Jean-Baptiste Barakat , G. Patriarche , Michel Gendry 4th Korean-German-French workshops on Nanophotonics,, 2014, Gangneung, South Korea Conference papers hal-01490276v1
	Photoluminescence properties of Inas/InP quantum rod-nanowires grown on silicon substrate Nicolas Chauvin , Roman Anufriev , H. Hadj Alouane M , Jean-Baptiste Barakat , Hammadi Khmissi 5th International Conference on Nanostructures SElf-Assembly, 2014, Marseille, France Conference papers hal-01490315v1
	Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires Roman Anufriev , Nicolas Chauvin , Jean-Baptiste Barakat , Hammadi Khmissi , Khalid Naji CSW2014, May 2014, Montpellier, France Conference papers hal-02071832v1
	Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs N. Malbert , C. Sury , A. Curutchet , N. Labat , C. Dua 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.84-87 Conference papers hal-00549998v1
	Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs Y. Douvry , Virginie Hoel , Jean-Claude de Jaeger , N. Defrance , Nathalie Malbert European Solid-State Device Research Conference 2010, Sep 2010, Séville, Spain. pp.1 Conference papers hal-00585101v1
	Temperature dependent degradation modes in AlGaN/GaN HEMTs Y. Douvry , Virginie Hoel , Jean-Claude de Jaeger , N. Defrance , N. Malbert 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117 Conference papers hal-00550022v1
	Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs N. Malbert , N. Labat , A. Curutchet , C. Sury , Virginie Hoel IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩ Conference papers hal-00550009v1
	Characterisation and modeling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs N. Malbert , A. Curutchet , N. Labat , C. Sury , C. Dua ESA/MOD Workshop on GaN Microwave Component Technologies, 2009, Germany. pp.139-153 Conference papers hal-00474460v1
	Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast Heterojunction Bipolar Transistors on InP Houssam Chouaib , C. Bru-Chevallier , Aleksandra Apostoluk , Wojciech Rudno-Rudzinski , Jean-Luc Pelouard 3rd International Workshop on Modulation Spectroscopy of Semiconductor Structures, Jul 2008, Wroclaw, Poland Conference papers hal-01997321v1
	Influence of shape and size of InAs/InP(001) quantum islands grown by SSMBE on the microphotoluminescence emission in the 1.5µm spectral range Nicolas Chauvin , E. Dupuy , R. Djondang , M. Gendry , G. Bremond International Workshop on Long Wavelength Quantum Dots : Growth and Applications (LWQD), Jul 2007, Rennes, France. pp.1 Conference papers hal-00491794v1
	Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001) Bassem Salem , Gérard Guillot , Taha Benyattou , Catherine Bru-Chevallier , Georges Bremond Integrated Optoelectronic Devices 2005, 2005, San Jose, United States. pp.27-30, ⟨10.1117/12.592221⟩ Conference papers hal-02353340v1
	UV photoreflectance for wide band gap nitride characterization C. Bru-Chevallier , S. Fanget , G. Guillot , Sandra Ruffenach , Olivier Briot Symposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78 Conference papers hal-00540433v1

	Optical anisotropy in single InAs/InP quantum dot and quantum rod nanowires R. Anufriev , J.-B Barakat , G. Patriarche , X. Letartre , P. Regreny Journées Boîtes Quantiques, Jun 2015, Grenoble, France Conference poster hal-02071858v1
	Self-catalyzed InP nanowires grown by VLS-MBE on silicon for photonics Jean-Baptiste Barakat , R. Anufriev , H. Dumont , P. Regreny , Nicolas Chauvin MRS Spring Meeting, Apr 2014, San-Francisco, United States Conference poster hal-02071838v1
	Optical spectroscopy of the GaAsSb/InP heterostructures for the application in high speed transitors (Mo-P-136) Aleksandra Apostoluk , Houssam Chouaib , Etienne Drahi , C. Bru-Chevallier , Melania Lijadi The 15th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL’08), Jul 2008, Lyon, France Conference poster hal-01997346v1
	Surface Fermi level in GaAsSb alloys grown by MBE on InP substrates Houssam Chouaib , Wojciech Rudno-Rudzinski , Aleksandra Apostoluk , C. Bru-Chevallier , Melania Lijadi 20th International Conference on Indium Phosphide and Related Materials (IPRM’08), May 2008, Versailles, France Conference poster hal-01997353v1
	Spectroscopic studies for the characterisation of the heterojunction bipolar transitors Aleksandra Apostoluk , C. Bru-Chevallier , Houssam Chouaib , Melania Lijadi , Philippe Bove 12th meeting of the Nano-, Micro- and Optoelectronics, (12ièmes Journées Nano-, Micro- et Optoélectronique, JNMO), Jun 2008, Ile d'Oléron, France Conference poster hal-01997349v1
	The SNOM imaging of the luminescence of the nanoparticles and quantum dots Aleksandra Apostoluk , Nayla El-Kork , Cecile Jamois , Paul Moretti , C. Bru-Chevallier Forum des microscopies à sonde locale (Symposium on the high-resolution microscopy), Mar 2007, Forêt de l’Orient, France Conference poster hal-01997356v1

Catherine BRU CHEVALLIER

Publications

Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate

Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires

Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate.

Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN

Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped

Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell

Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths

Comparative study of electrical parameters of Au/GaN and Hg/GaN Schottky diodes

Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics

InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires

Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates

Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates

Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

Strain dependence of the direct energy bandgap in thin silicon on insulator layers

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP

Deep levels investigation of AlGaN/GaN heterostructure transistors

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

UV photoreflectance spectroscopy in strained silicon on insulator structures

Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

Extraction of ultraviolet emitting silicon species from strongly hydrogenated nanoporous silicon

Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule

Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration

Optical strain measurement in ultrathin sSOI wafers.

Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3 μm

Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm

Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots

Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001)

Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs/InP(001) quantum dot

Photoreflectance study at the micrometer scale

Toward long wavelength low density InAs/GaAs quantum dots

InAs/InP quantum dots: from single to coupled dots applications

Shape and size effects on multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate

Photoreflectance study of GaAsSb/InP heterostructures

Photoreflectance on wide bandgap nitride semiconductors

MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers

Micro-photoluminescence study of single self-organized InAs/InP quantum sticks

Photoluminescence studies of stacked InAs/InP quantum sticks

Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001)

From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)

Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors

Evidence of excited levels in self-organized InAs/InP(001) islands with low size dispersion

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm

Growth and optical properties of GaN/AlN quantum wells

Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)

AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

MOVPE growth of GaAsN : surface study by AFM and optical properties

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length

Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures

Accurate analytical determination of the resistance of a semiconducting layer between two coplanar electrodes

Evidence for acceptor surface states in GaAs planar-type devices

Surface space charge effects in planar submicrometer GaAs and InP devices

MESFET GaAs à grille interrompue. Analyse du fonctionnement pour la photo-détection

Optical anisotropy in single InAs/InP quantum dot and quantum rod nanowires

Optical characterization of wavelength tunable InAs QDs with (In)GaAs surrounding material

Control of In droplets for self-catalyzed growth of InP nanowires by VLS-MBE on silicon substrates

Impact of the 1D nature of InP based nanowires on their optical properties

Photoluminescence properties of Inas/InP quantum rod-nanowires grown on silicon substrate

Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires

Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs

Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs