Catherine BRU CHEVALLIER

Publications

Article dans une revue (68)

Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate Mohamed Helmi Hadj Alouane,Olfa Nasr,Hammadi Khmissi,Bouraoui Ilahi,Gilles Patriarcheet al. Journal of Luminescence, 2021, 231, pp.117814. ⟨10.1016/j.jlumin.2020.117814⟩ Article dans une revue hal-03040324v1
Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency Maher Ezzedini,Tarek Hidouri,Mohamed Helmi Hadj Alouane,Amor Sayari,Elsayed Shalaanet al. Nanoscale Research Letters, 2017, 12 (1), ⟨10.1186/s11671-017-2218-2⟩ Article dans une revue hal-01735294v1
Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material O. Nasr,Nicolas Chauvin,H. Hadj Alouane M,H. Maaref,C. Bru-Chevallieret al. Journal of Optics, 2017, 19, pp.025401. ⟨10.1088/2040-8986/aa52d6⟩ Article dans une revue hal-01701515v1
Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing Bouraoui Ilahi,Olfa Nasr,Bernard Paquette,H. Hadj Alouane,Nicolas Chauvinet al. Journal of Alloys and Compounds, 2016, 656, pp.132-137. ⟨10.1016/j.jallcom.2015.09.231⟩ Article dans une revue hal-01918155v1
Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires Roman Anufriev,Jean-Baptiste Barakat,G. Patriarche,Xavier Letartre,C. Bru-Chevallieret al. Nanotechnology, 2015, 26, pp.395701. ⟨10.1088/0957-4484/26/39/395701⟩ Article dans une revue hal-01489428v1
Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped R. Khelifi,H. Mazari,S. Mansouri,Z. Benamara,M. Mostefaouiet al. Sensors & Transducers., 2014, 27, pp.217 Article dans une revue hal-01149661v1
Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate. Roman Anufriev,Nicolas Chauvin,Hammadi Khmissi,Khalid Naji,G. Patriarcheet al. Applied Physics Letters, 2014, 104, pp.183101. ⟨10.1063/1.4875276⟩ Article dans une revue hal-01489881v1
Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN N. Benyahya,H. Mazari,N. Benseddik,Z. Benamara,M. Mostefaouiet al. Optical and Quantum Electronics, 2014, 46 (1), pp.209 - 219. ⟨10.1007/s11082-013-9747-4⟩ Article dans une revue hal-01901693v1
Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell Maher Ezzdini,Bilel Azeza,Saoussen Rekaya,Mohamed Helmi Hadj Alouane,Larbi Sfaxiet al. International Journal of Nanotechnology, 2013, 10 (5/6/7), ⟨10.1504/IJNT.2013.053514⟩ Article dans une revue hal-01735303v1
Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths Roman Anufriev,Nicolas Chauvin,H. Khmissi,K. Naji,J.B. Barakatet al. Journal of Applied Physics, 2013, 113 (19), ⟨10.1063/1.4804327⟩ Article dans une revue hal-01735112v1
Comparative study of electrical parameters of Au/GaN and Hg/GaN Schottky diodes Khelifi R.,Mazari H.,Mansouri S.,Ameur K.,Benamara Z.et al. Journal of Optoelectronics and Advanced Materials, 2013, 15 (5-6), pp.471-474 Article dans une revue hal-01901721v1
Excitonic properties of wurtzite InP nanowires grown on silicon substrate M H Hadj Alouane,Nicolas Chauvin,H Khmissi,K Naji,B Ilahiet al. Nanotechnology, 2013, 24 (3), ⟨10.1088/0957-4484/24/3/035704⟩ Article dans une revue hal-01734647v1
Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates Roman Anufriev,Nicolas Chauvin,Hammadi Khmissi,Khalid Naji,Gilles Patriarcheet al. physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2013, 7 (10), pp.878-881. ⟨10.1002/pssr.201307242⟩ Article dans une revue istex hal-01988420v1
Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires Roman Anufriev,Nicolas Chauvin,Hammadi Khmissi,Khalid Naji,Michel Gendryet al. Applied Physics Letters, 2012, 101 (7), ⟨10.1063/1.4745608⟩ Article dans une revue hal-01735117v1
Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates Nicolas Chauvin,M. Hadj Alouane,R. Anufriev,H. Khmissi,K. Najiet al. Applied Physics Letters, 2012, 100 (1), ⟨10.1063/1.3674985⟩ Article dans une revue hal-01735186v1
Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics H. Chouaib,C. Bru-Chevallier Applied Physics Letters, 2012, 100 (17), ⟨10.1063/1.4705408⟩ Article dans une revue hal-01901728v1
InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates H. Khmissi,K. Naji,M. H. Hadj Alouane,Nicolas Chauvin,C. Bru-Chevallieret al. Journal of Crystal Growth, 2012, 344 (1), pp.45 - 50. ⟨10.1016/j.jcrysgro.2012.01.038⟩ Article dans une revue istex hal-01735120v1
InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates C. Bru-Chevallier,A. El Akra,David Pelloux-Gervais,H. Dumont,B. Canutet al. Journal of Nanoscience and Nanotechnology, 2011, 11 (10), pp.9153-9159. ⟨10.1166/jnn.2011.4282⟩ Article dans une revue hal-01735321v1
Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots C. Bru-Chevallier,L. Bouzaïene,L. Sfaxi,M. Baira,H. Maaref Journal of Nanoparticle Research, 2011, 13 (1), pp.257 - 262. ⟨10.1007/s11051-010-0024-1⟩ Article dans une revue istex hal-01731927v1
Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate M Hadj Alouane,R. Anufriev,Nicolas Chauvin,H Khmissi,K. Najiet al. Nanotechnology, 2011, 22 (40), ⟨10.1088/0957-4484/22/40/405702⟩ Article dans une revue istex hal-01735193v1
Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates Rekaya S.,Sfaxi L.,C. Bru-Chevallier,Maaref H. Journal of Luminescence, 2011, 131, pp.7-11 Article dans une revue hal-01901841v1
Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction H. Khmissi,L. Sfaxi,L. Bouzaïene,F. Saidi,H. Maarefet al. Journal of Applied Physics, 2010, 107 (7), ⟨10.1063/1.3371356⟩ Article dans une revue hal-01901770v1
Strain dependence of the direct energy bandgap in thin silicon on insulator layers J Munguía,J-M Bluet,H Chouaib,G Bremond,Michel Mermouxet al. Journal of Physics D: Applied Physics, 2010, 43 (25), pp.255401. ⟨10.1088/0022-3727/43/25/255401⟩ Article dans une revue istex hal-00569631v1
Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage W. Chikhaoui,J.-M. Bluet,M.-A. Poisson,N. Sarazin,C. Duaet al. Applied Physics Letters, 2010, 96 (7), ⟨10.1063/1.3326079⟩ Article dans une revue hal-01901750v1
Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP H. Chouaib,C. Bru-Chevallier,A. Apostoluk,W. Rudno-Ruzinski,J. L. Pelouardet al. Physica Status Solidi A (applications and materials science), 2009, 206, pp.786 Article dans une revue hal-01902088v1
UV photoreflectance spectroscopy in strained silicon on insulator structures J. Munguía,J.M. Bluet,H. Chouaib,G. Bremond,C. Bru-Chevallier Physica Status Solidi A (applications and materials science), 2009, 206, pp.821 Article dans une revue hal-01902071v1
Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots M. Baira,L. Bouzaïene,L. Sfaxi,H. Maaref,O. Martyet al. Journal of Applied Physics, 2009, 105 (9), ⟨10.1063/1.3122003⟩ Article dans une revue hal-01902104v1
Deep levels investigation of AlGaN/GaN heterostructure transistors W. Chikhaoui,J.M. Bluet,Pascal Girard,G. Bremond,C. Bru-Chevallieret al. Physica B: Condensed Matter, 2009, 404 (23-24), pp.4877 - 4879. ⟨10.1016/j.physb.2009.08.231⟩ Article dans une revue istex hal-01901823v1
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs Nathalie Malbert,Nathalie Labat,Arnaud Curutchet,Charlotte Sury,Virginie Hoelet al. Microelectronics Reliability, 2009, 49 (9-11), pp.1216-1221. ⟨10.1016/j.microrel.2009.07.015⟩ Article dans une revue istex hal-00401267v1
Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001) Jinquan Cheng,Thomas Aviles,Ahiram El Akra,C. Bru-Chevallier,Ludovic Largeauet al. Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩ Article dans une revue hal-01901801v1
Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates S. Rekaya,L. Sfaxi,L. Bouzaïene,H. Maaref,C. Bru-Chevallier Materials Science and Engineering: C, 2008, 38, pp.906-909 Article dans une revue hal-01902217v1
Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule M. Baira,L. Sfaxi,L. Bouzaïene,H. Maaref,Nicolas Chauvinet al. Journal of Applied Physics, 2008, 104 (6), ⟨10.1063/1.2968238⟩ Article dans une revue hal-01902111v1
Extraction of ultraviolet emitting silicon species from strongly hydrogenated nanoporous silicon V. Lysenko,V. Onyskevych,O. Marty,V. Skryshevsky,Y. Chevolotet al. Applied Physics Letters, 2008, 92 (25), ⟨10.1063/1.2948955⟩ Article dans une revue hal-01902208v1
Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates Houssam Chouaib,C. Bru-Chevallier,Aleksandra Apostoluk,Wojciech Rudno-Rudzinski,Melania Lijadiet al. Applied Physics Letters, 2008, 93 (4), ⟨10.1063/1.2959829⟩ Article dans une revue hal-01902121v1
Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration Houssam Chouaib,C. Bru-Chevallier Applied Physics Letters, 2007, 90 (26), ⟨10.1063/1.2751591⟩ Article dans une revue hal-01902222v1
Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001) Nicolas Chauvin,E. Tranvouez,G. Bremond,G. Guillot,C. Bru-Chevallieret al. Nanotechnology, 2006, 17 (8), pp.1831-1834. ⟨10.1088/0957-4484/17/8/004⟩ Article dans une revue istex hal-01902515v1
Size and shape effects on excitons and biexcitons in single InAs∕InP quantum dots Nicolas Chauvin,B. Salem,G. Bremond,G. Guillot,C. Bru-Chevallieret al. Journal of Applied Physics, 2006, 100 (7), ⟨10.1063/1.2353896⟩ Article dans une revue hal-01902442v1
Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs/InP(001) quantum dot G. Saint-Girons,Nicolas Chauvin,A. Michon,G. Patriarche,G. Beaudoinet al. Applied Physics Letters, 2006, 88 (13), pp.133101. ⟨10.1063/1.2185008⟩ Article dans une revue hal-01902486v1
Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3 μm Nicolas Chauvin,M. Baira,C. Bru-Chevallier,B. Ilahi,L. Sfaxiet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2006, 3 (11), pp.3672 - 3675. ⟨10.1002/pssc.200671614⟩ Article dans une revue istex hal-01902477v1
Shape and size effects on multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate Nicolas Chauvin,G. Bremond,C. Bru-Chevallier,E. Dupuy,P. Regrenyet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2006, 3 (11), pp.3912 - 3915. ⟨10.1002/pssc.200671615⟩ Article dans une revue istex hal-01902472v1
Photoreflectance study at the micrometer scale C. Bru-Chevallier,H. Chouaib,A. Bakouboula,Taha Benyattou Applied Surface Science, 2006, 253 (1), pp.194 - 199. ⟨10.1016/j.apsusc.2006.05.085⟩ Article dans une revue istex hal-01902537v1
Toward long wavelength low density InAs/GaAs quantum dots B. Ilahi,L. Sfaxi,E. Tranvouez,G. Bremond,M. Bairaet al. Physics Letters A, 2006, 357, pp.360 Article dans une revue hal-01902366v1
InAs/InP quantum dots: from single to coupled dots applications Charles Cornet,Andrei Schliwa,Manus Hayne,Nicolas Chauvin,François Doréet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2006, 3 (11), pp.4039. ⟨10.1002/pssc.200671623⟩ Article dans une revue istex hal-00491717v1
Optical strain measurement in ultrathin sSOI wafers. J. Munguía,H. Chouaib,J. de La Torre,G. Bremond,C. Bru-Chevallieret al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253, pp.18. ⟨10.1016/j.nimb.2006.10.007⟩ Article dans une revue istex hal-01902421v1
Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) E. Dupuy,P. Regreny,Y. Robach,M. Gendry,Nicolas Chauvinet al. Applied Physics Letters, 2006, 89 (12), ⟨10.1063/1.2354010⟩ Article dans une revue hal-01902435v1
Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm H. Chouaib,Nicolas Chauvin,C. Bru-Chevallier,Christelle Monat,P. Regrenyet al. Applied Surface Science, 2006, 253 (1), pp.90 - 94. ⟨10.1016/j.apsusc.2006.05.081⟩ Article dans une revue istex hal-01902530v1
Micro-photoluminescence study of single self-organized InAs/InP quantum sticks Nicolas Chauvin,Bassem Salem,C. Bru-Chevallier,T. Benyatou,Gérard Guillotet al. Materials Science and Engineering: C, 2005, 25, pp.650-653. ⟨10.1016/j.msec.2005.06.023⟩ Article dans une revue istex hal-01975987v1
Photoluminescence studies of stacked InAs/InP quantum sticks Nicolas Chauvin,B. Salem,G. Bremond,C. Bru-Chevallier,G. Guillotet al. Journal of Crystal Growth, 2005, 275 (1-2), pp.e2327-e2331. ⟨10.1016/j.jcrysgro.2004.11.372⟩ Article dans une revue istex hal-01976042v1
Photoreflectance study of GaAsSb/InP heterostructures Houssam Chouaib,C. Bru-Chevallier,G. Guillot,H. Lahreche,P. Bove Journal of Applied Physics, 2005, 98 (12), pp.123524. ⟨10.1063/1.2142099⟩ Article dans une revue hal-01975903v1
MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3μm in single and stacked layers V. Celibert,Erwan Tranvouez,G. Guillot,C. Bru-Chevallier,L. Grenouilletet al. Journal of Crystal Growth, 2005, 275 (1-2), pp.e2313-e2319. ⟨10.1016/j.jcrysgro.2004.11.370⟩ Article dans une revue hal-01976052v1
Photoreflectance on wide bandgap nitride semiconductors C. Bru-Chevallier,S. Fanget,A. Philippe Physica Status Solidi A (applications and materials science), 2005, 202 (7), pp.1292-1299 Article dans une revue hal-01975909v1
Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors C. Bru-Chevallier,Houssam Chouaib,J. Arcamone,Taha Benyattou,H. Lahrecheet al. Thin Solid Films, 2004, 450 (1), pp.151-154 Article dans une revue hal-01976075v1
From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) Michel Gendry,Christelle Monat,J. Brault,P. Regreny,G. Hollingeret al. Journal of Applied Physics, 2004, 95 (9), pp.4761-4766 Article dans une revue hal-01976064v1
Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001) P. Miska,J. Even,C. Platz,B. Salem,T. Benyattouet al. Journal of Applied Physics, 2004, 95 (3), pp.1074-1080. ⟨10.1063/1.1638890⟩ Article dans une revue hal-01976127v1
Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm Vincent Célibert,Bassem Salem,Gérard Guillot,Catherine Bru-Chevallier,Laurent Grenouilletet al. MRS Online Proceedings Library, 2003, Materials Research Society Symposium - Proceedings, 794, pp. 207-212. ⟨10.1557/PROC-799-Z7.8/T7.8⟩ Article dans une revue hal-02353320v1
Growth and optical properties of GaN/AlN quantum wells C. Adelmann,E. Sarigiannidou,D. Jalabert,Y. Hori,J.-L. Rouvièreet al. Applied Physics Letters, 2003, 82 (23), pp.4154-4156. ⟨10.1063/1.1581386⟩ Article dans une revue hal-01975920v1
Evidence of excited levels in self-organized InAs/InP(001) islands with low size dispersion B. Salem,G. Bremond,T. Benyattou,C. Bru-Chevallier,G. Guillotet al. Physica E: Low-dimensional Systems and Nanostructures, 2003, 17, pp.124-126. ⟨10.1016/S1386-9477(02)00742-7⟩ Article dans une revue istex hal-02090522v1
Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001) B. Salem,T. Benyattou,G. Guillot,C. Bru-Chevallier,G. Bremondet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 66 (19), ⟨10.1103/PhysRevB.66.193305⟩ Article dans une revue hal-02165341v1
Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well L. Grenouillet,C. Bru-Chevallier,G. Guillot,P. Gilet,P. Duvautet al. Applied Physics Letters, 2000, 76 (16), pp.2241 - 2243. ⟨10.1063/1.126308⟩ Article dans une revue hal-01928830v1
AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE Laurent Auvray,H. Dumont,J. Dazord,Y. Monteil,Jean Bouixet al. Journal of Crystal Growth, 2000, 221, pp.475-480 Article dans une revue hal-01118274v1
MOVPE growth of GaAsN : surface study by AFM and optical properties Laurent Auvray,H. Dumont,J. Dazord,Y. Monteil,Jean Bouixet al. Materials Science in Semiconductor Processing, 2000, 3, pp.505-509 Article dans une revue hal-01118272v1
Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates Stéphane Monéger,Americo Tabata,C. Bru-Chevallier,G. Guillot,A. Georgakilaset al. Applied Physics Letters, 1993, 63 (12), pp.1654-1656 Article dans une revue hal-01977121v1
Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length P. Dollfus,C. Bru,P. Hesto Journal of Applied Physics, 1993, 73 (2), pp.804-812. ⟨10.1063/1.353341⟩ Article dans une revue hal-01977076v1
Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures Pierre Dansas,Daniel Pascal,C. Bru-Chevallier,S. Laval,L. Giraudetet al. Journal of Applied Physics, 1990, 67 (3), pp.1384-1388 Article dans une revue hal-01977062v1
Accurate analytical determination of the resistance of a semiconducting layer between two coplanar electrodes Daniel Pascal,Pierre Dansas,C. Bru-Chevallier,Suzanne Laval Semiconductor Science and Technology, 1989, 4, pp.633-638 Article dans une revue hal-01977042v1
Evidence for acceptor surface states in GaAs planar-type devices P. Dansas,M. Bouchemat,C. Bru-Chevallier,Daniel Pascal,Suzanne Laval Solid-State Electronics, 1988, 31, pp.1327-1333 Article dans une revue hal-01977025v1
MESFET GaAs à grille interrompue. Analyse du fonctionnement pour la photo-détection D. Pascal,P. Dansas,C. Bru,S. Laval Revue de Physique Appliquée, 1987, 22 (8), pp.931-934. ⟨10.1051/rphysap:01987002208093100⟩ Article dans une revue istex jpa-00245634v1
Surface space charge effects in planar submicrometer GaAs and InP devices C. Bru-Chevallier,Patrice de Carné,P. Dansas,Daniel Pascal,Michel Rousseauet al. IEEE Transactions on Electron Devices, 1987, ED34 (8), pp.1611-1616 Article dans une revue hal-01977000v1

Communication dans un congrès (15)

Optical anisotropy in single InAs/InP quantum dot and quantum rod nanowires Roman Anufriev,Jean-Baptiste Barakat,G. Patriarche,Xavier Letartre,Philippe Regrenyet al. Nanowires 2015, 2015, Barcelone, Spain Communication dans un congrès hal-01489572v1
Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires Roman Anufriev,Nicolas Chauvin,Jean-Baptiste Barakat,Hammadi Khmissi,Khalid Najiet al. CSW2014, May 2014, Montpellier, France Communication dans un congrès hal-02071832v1
Impact of the 1D nature of InP based nanowires on their optical properties Nicolas Chauvin,Roman Anufriev,Jean-Baptiste Barakat,G. Patriarche,Michel Gendryet al. 4th Korean-German-French workshops on Nanophotonics,, 2014, Gangneung, South Korea Communication dans un congrès hal-01490276v1
Photoluminescence properties of Inas/InP quantum rod-nanowires grown on silicon substrate Nicolas Chauvin,Roman Anufriev,H. Hadj Alouane M,Jean-Baptiste Barakat,Hammadi Khmissiet al. 5th International Conference on Nanostructures SElf-Assembly, 2014, Marseille, France Communication dans un congrès hal-01490315v1
Control of In droplets for self-catalyzed growth of InP nanowires by VLS-MBE on silicon substrates Hervé Dumont,Jean-Baptiste Barakat,Djawhar Ferrah,Geneviève Grenet,Philippe Regrenyet al. CSW 2014, 2014, Montpellier, France Communication dans un congrès hal-01489939v1
Optical characterization of wavelength tunable InAs QDs with (In)GaAs surrounding material O. Nasr,H. Hadj Alouane M,Nicolas Chauvin,H. Maaref,F. Hassenet al. 5th International Conference on Nanostructures SElf-Assembly, 2014, Marseille, France Communication dans un congrès hal-01489844v1
Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs Y. Douvry,Virginie Hoel,Jean-Claude de Jaeger,N. Defrance,Nathalie Malbertet al. European Solid-State Device Research Conference 2010, Sep 2010, Séville, Spain. pp.1 Communication dans un congrès hal-00585101v1
Temperature dependent degradation modes in AlGaN/GaN HEMTs Y. Douvry,Virginie Hoel,Jean-Claude de Jaeger,N. Defrance,N. Malbertet al. 5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117 Communication dans un congrès hal-00550022v1
Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs N. Malbert,N. Labat,A. Curutchet,C. Sury,Virginie Hoelet al. IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩ Communication dans un congrès hal-00550009v1
Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs N. Malbert,C. Sury,A. Curutchet,N. Labat,C. Duaet al. 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.84-87 Communication dans un congrès hal-00549998v1
Characterisation and modeling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs N. Malbert,A. Curutchet,N. Labat,C. Sury,C. Duaet al. ESA/MOD Workshop on GaN Microwave Component Technologies, 2009, Germany. pp.139-153 Communication dans un congrès hal-00474460v1
Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast Heterojunction Bipolar Transistors on InP Houssam Chouaib,C. Bru-Chevallier,Aleksandra Apostoluk,Wojciech Rudno-Rudzinski,Jean-Luc Pelouardet al. 3rd International Workshop on Modulation Spectroscopy of Semiconductor Structures, Jul 2008, Wroclaw, Poland Communication dans un congrès hal-01997321v1
Influence of shape and size of InAs/InP(001) quantum islands grown by SSMBE on the microphotoluminescence emission in the 1.5µm spectral range Nicolas Chauvin,E. Dupuy,R. Djondang,M. Gendry,G. Bremondet al. International Workshop on Long Wavelength Quantum Dots : Growth and Applications (LWQD), Jul 2007, Rennes, France. pp.1 Communication dans un congrès hal-00491794v1
Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001) Bassem Salem,Gérard Guillot,Taha Benyattou,Catherine Bru-Chevallier,Georges Bremondet al. Integrated Optoelectronic Devices 2005, 2005, San Jose, United States. pp.27-30, ⟨10.1117/12.592221⟩ Communication dans un congrès hal-02353340v1
UV photoreflectance for wide band gap nitride characterization C. Bru-Chevallier,S. Fanget,G. Guillot,Sandra Ruffenach,Olivier Briot Symposium on Optical and X-Ray Metrology for Advanced Device Materials Characterization, Jun 2003, Strasbourg (FRANCE), France. pp.75-78 Communication dans un congrès hal-00540433v1

Poster de conférence (6)

Optical anisotropy in single InAs/InP quantum dot and quantum rod nanowires R. Anufriev,J.-B Barakat,G. Patriarche,X. Letartre,P. Regrenyet al. Journées Boîtes Quantiques, Jun 2015, Grenoble, France Poster de conférence hal-02071858v1
Self-catalyzed InP nanowires grown by VLS-MBE on silicon for photonics Jean-Baptiste Barakat,R. Anufriev,H. Dumont,P. Regreny,Nicolas Chauvinet al. MRS Spring Meeting, Apr 2014, San-Francisco, United States Poster de conférence hal-02071838v1
Optical spectroscopy of the GaAsSb/InP heterostructures for the application in high speed transitors (Mo-P-136) Aleksandra Apostoluk,Houssam Chouaib,Etienne Drahi,C. Bru-Chevallier,Melania Lijadiet al. The 15th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL’08), Jul 2008, Lyon, France Poster de conférence hal-01997346v1
Spectroscopic studies for the characterisation of the heterojunction bipolar transitors Aleksandra Apostoluk,C. Bru-Chevallier,Houssam Chouaib,Melania Lijadi,Philippe Bove 12th meeting of the Nano-, Micro- and Optoelectronics, (12ièmes Journées Nano-, Micro- et Optoélectronique, JNMO), Jun 2008, Ile d'Oléron, France Poster de conférence hal-01997349v1
Surface Fermi level in GaAsSb alloys grown by MBE on InP substrates Houssam Chouaib,Wojciech Rudno-Rudzinski,Aleksandra Apostoluk,C. Bru-Chevallier,Melania Lijadiet al. 20th International Conference on Indium Phosphide and Related Materials (IPRM’08), May 2008, Versailles, France Poster de conférence hal-01997353v1
The SNOM imaging of the luminescence of the nanoparticles and quantum dots Aleksandra Apostoluk,Nayla El-Kork,Cecile Jamois,Paul Moretti,C. Bru-Chevallieret al. Forum des microscopies à sonde locale (Symposium on the high-resolution microscopy), Mar 2007, Forêt de l’Orient, France Poster de conférence hal-01997356v1