- 41
- 9
- 3
- 2
- 1
- 1
Charles Cornet
Prof. Dr.,
Head of FOTON-OHM (Optoelectronics, Heteroepitaxy and Materials) research team
57
Documents
Identifiants chercheurs
- charles-cornet
- 0000-0002-1363-7401
- Google Scholar : https://scholar.google.fr/citations?user=6MVy6kAAAAAJ&hl=fr&oi=ao
- IdRef : 112108571
Présentation
### **Research projects**
\*2023-2027: PEPR Hydrogène décarboné - France 2030: “Robust, cost efficient aNd AUTonomous PhotoelectrochemIcaL cells with III-V thin films on Si for practical hydrogen prodUction. (NAUTILUS)”: coordinator.
\*2022-2026: PEPR Electronique - France 2030: “Optical Frequency Combs On a Chip (OFCOC)”: contributor, growth.
\*2021-2025: EU COST action: “European Network for Innovative and Advanced Epitaxy (OPERA)”: secondary proposer, Management committee member.
\*2021-2025: ANR PRC project “collaborative”: “PhysIcAl properties of hybrid semimetal/semicoNductor III-V/Si maTerials (PIANIST)”: coordinator, growth, simulation, optoelectronic properties.
\*2021-2025: ANR PRC project “collaborative”: “Nucleation and growth of III-V on Si explored in situ (NUAGES)”: local coordinator, growth, simulation.
\*2021-2025: PIA project Equipex NanoFutur: FOTON local scientific coordinator.
\*2021-2024: ANR PRC project “collaborative”: “Light COnveRsioN by photoinduced‐electrochemiluminescence (LICORN)”: contributor, growth.
\*2020-2023: ANR PRCE project “collaborative with a company”: “High-Efficiency Epitaxial CIGS-Silicon Tandem Solar Cell (EPCIS)”: contributor, growth.
\*2019-2022: ANR PRC project “collaborative”: “Improvement of photovoltaic Conversion Efficiency by acting on thermalization MecANisms (ICEMAN)”: contributor, growth.
\*2018-2021: ANR young researcher grant (projet jeune chercheur ANR): “secOnd oRder oPtical pHenomEna in galliUm phosphide microdisks on Silicon (ORPHEUS)”: contributor, growth and simulation.
\*2015-2018: ANR PRC project “collaborative”: “Advanced aNalysis of III-V/Si nucleaTIon for highly integrated PhOtonic Devices (ANTIPODE)”: coordinator, growth and simulation.
\*2014-2017: Labex Cominlabs project: “3D optical manycores”: contributor.
\*2012-2015: ANR “blanc” project: “Epitaxial integration of III-V optoelectronic devices on silicon (OPTOSI)”: project co-writer, contributor.
\*2012-2014: ANR young researcher grant (projet jeune chercheur ANR): “Silicon photonics with diluted nitride coherent integration (SINPHONIC)”: project main writer, coordinator, WP leader, contributor.
\*2011-2014: National (3) and international (1) beam time allocation at European Synchrotron Radiation Facility (ESRF) on CRG lines D2AM and BM-32.
\*2011-2014: ANR PROGELEC project: “Monolithic integration of high efficiency III-V solar cells on silicon (MENHIRS)”: project co-writer, contributor and member of the administrative and financial staff.
\*2011-2012: C’nano NANOTRANS project (C’nano Nord-ouest): “dilute nitride quantum dots: relationship between morphology, electronic structure and optical properties”: project co-writer, joint coordinator, contributor.
\*2004-2009: FP6 European network of excellence on Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE): contributor.
\*2004-2008: FP6 European Network of Excellence on Photonic Integrated Components and Circuits (EPIXNET): contributor.
### **Awards**
\*Vebleo Fellow (2021).
\* Innovation award of the “pôle de compétitivité Images et Réseaux”, for the SINPHONIC ANR project (2013).
\* Young researcher award of “Région Bretagne” (2007)
\* Best Ph. D. prize of the SANDiE European network of excellence (2006)
### **Short CV**
- 2020-present: INSA, Rennes, France
Position : Professor at INSA Rennes, Institut FOTON (CNRS), head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of III-V/Si-based light emitters/absorbers on silicon for photonics and energy materials applications. Solar hydrogen production with photo-electrochemical cells.
- 2007-2020: INSA, Rennes, France
Position : “Maître de Conférences” (Ass. Prof., HDR), at FOTON CNRS Laboratory. Co-head of the “photonics on silicon” research program. Since 2017, head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of GaP-based light emitters/absorbers on silicon for photonics and energy materials applications.
- 2006–2007: INSA Rennes, France
Position: Post-doctoral fellow with teaching activities at FOTON CNRS Laboratory. Research topic: Growth and characterization of InAs/GaP quantum dots.
- 2003–2006: INSA, Rennes (France), TU Berlin (Germany) and KU Leuven (Belgium)
Position: Physics PhD Thesis on “electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate” at INSA-Rennes (France) in collaboration with TU Berlin, KU Leuven and TU Eindhoven within European network of excellence SANDIE.PhD Thesis supervised by Pr. J. Even. Research topic: Electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate.
- 2003: “Diplôme d’Etudes Approfondies” (DEA = MSc2 degree) of Physics: light and matter interaction, at University of Rennes 1,France. Highest distinction, ranked first.
Position: Master 2 training period at LENS laboratory (“Laboratoire d’Etude des Nanostructures à Semiconducteurs”). Research topic: Absorption measurements and simulations of InAs/InP (113)B quantum dots.
- 2001-2002: “Agrégation de Physique” passed at Ecole Normale Supérieure (ENS – Paris, France).
- 2001: Center for Quantum Electronics, Hanoi (Vietnam)
Position: Master 1 training period at CQE laboratory. Research topic: Time-resolved spectroscopy of tunable dye lasers
- …-2000: Paris-Sud University, Orsay (France)
“Licence”, “Maîtrise” and “Magistère” (BSc and MSc1 degrees) of fundamental physics at Paris-Sud University (Université Paris XI – Orsay, France)
Position: BSc training period at “Laboratory of the linear accelerator” (particle physics). Research topic: Analysis of DIRC performances in the frame of the Babar experiment
### **Teaching Activities**
\* Energetics and environment: from nuclear to renewable energies.
\* Applied quantum mechanics (quantum mechanic for beginners).
\* Thermodynamics.
Compétences
-Materials for Photonics and Energy / Photovoltaics and Solar Hydrogen
-III-V semiconductors and Silicon
-Physics of semiconductors: modeling of nanostructures, bandstructures, bandlineups
-Optical and structural properties of semiconductors compounds and devices
-Epitaxy and Ultra-High Vacuum crystal growth techniques
-Atomic Force Microscopy (AFM) and related near-field techniques
-Surface and volume diffraction (RHEED, XRD)
Publications
- 1
- 1
- 3
- 9
- 7
- 11
- 12
- 4
- 1
- 2
- 4
- 1
- 1
- 4
- 3
- 3
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 57
- 57
- 53
- 48
- 32
- 25
- 25
- 24
- 24
- 22
- 21
- 19
- 19
- 18
- 18
- 16
- 15
- 13
- 13
- 13
- 13
- 11
- 11
- 10
- 10
- 10
- 8
- 8
- 7
- 7
- 7
- 6
- 6
- 6
- 5
- 5
- 4
- 4
- 4
- 4
- 4
- 4
- 4
- 4
- 4
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 54
- 2
- 11
- 4
- 3
- 2
- 1
Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
Communication dans un congrès
hal-01496667v1
|
|
First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
hal-01496924v1
|
|
Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania
Communication dans un congrès
hal-01497190v1
|
|
Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonicsEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01497220v1
|
|
Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cellEuropean Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203374v1
|
|
Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumRayons X & Matière 2015, Dec 2015, Grenoble, France
Communication dans un congrès
hal-01497228v1
|
|
Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States
Communication dans un congrès
hal-01497194v1
|
|
Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France
Communication dans un congrès
hal-01115004v1
|
|
Low cristalline defect density in GaP/Si nanolayersEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès
hal-01115024v1
|
|
Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur SiRéunion plénière du GDR Pulse (PULSE 2014), Oct 2014, Toulouse, France
Communication dans un congrès
hal-01137337v1
|
|
Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès
hal-01115312v1
|
|
Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
Communication dans un congrès
hal-01114912v1
|
|
gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
|
|
Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Communication dans un congrès
hal-00918754v1
|
|
Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applicationsEuropean Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918729v1
|
|
GaAsPN compounds for Si photonicsInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Communication dans un congrès
hal-00918743v1
|
|
Intégration optique par croissance directe de nanostructures III-V sur silicium14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France
Communication dans un congrès
hal-00918745v1
|
|
Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/SiXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918790v1
|
|
Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918791v1
|
|
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cellsJournées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France
Communication dans un congrès
hal-00788478v1
|
|
Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337v1
|
|
Potentiality of GaAsPN and InGaPN for photovoltaic applications3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France
Communication dans un congrès
hal-00726855v1
|
|
coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
|
|
Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cellsinternational conference on MBE, 2012, Japan
Communication dans un congrès
hal-00726772v1
|
|
Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cellsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788544v1
|
|
Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.87-91, ⟨10.1016/j.tsf.2012.10.134⟩
Communication dans un congrès
hal-00918657v1
|
|
Dilute nitride GaNAsP for photonic applications on siliconInternational Symposium on nitrides (ISNT), 2012, saint-Malo, France
Communication dans un congrès
hal-00726885v1
|
|
Raman investigation of GaP-Si interfaces grown by molecular beam epitaxyEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
Communication dans un congrès
hal-00788308v1
|
|
InGaPN and GaAsPN layers for tandem solar cells on siliconEuropean materials research society international conference (EMRS), 2012, Strasbourg, France
Communication dans un congrès
hal-00726850v1
|
|
Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
Communication dans un congrès
hal-00788434v1
|
|
Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
|
|
Structural characterisation of GaP/Si nanolayersEuropean Materials Research Society 2011, May 2011, Strasbourg, France
Communication dans un congrès
hal-00654330v1
|
|
MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diodeeuro-MBE 2011, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654313v1
|
|
|
Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
|
Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on SiliconEMRS, Jun 2009, Strasbourg, France. pp.1
Communication dans un congrès
hal-00491771v1
|
|
Croissance par MBE de Boites quantiques InP sur GaP/Sijournées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1
Communication dans un congrès
hal-00491778v1
|
|
Growth and characterization of single phase GaP on Si(001)Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo
Communication dans un congrès
hal-00486678v1
|
|
Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate(International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491776v1
|
|
First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès
hal-00491426v1
|
|
Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dotseuro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1
Communication dans un congrès
hal-00491810v1
|
|
Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Poster de conférence
hal-01660154v1
|
GaAsPN Single and Tandem Solar Cells on Silicon19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01496922v1
|
|
Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on siliconEuro-MBE 2015, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147439v1
|
|
Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de siliciumOptique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France
Poster de conférence
hal-01497238v1
|
|
Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147468v1
|
|
Electrical injection in GaP-based laser waveguides and active areas26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), pp.P23, 2014, ⟨10.1109/ICIPRM.2014.6880545⟩
Poster de conférence
hal-01114889v1
|