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Charles Cornet
Prof. Dr.,
Head of FOTON-OHM (Optoelectronics, Heteroepitaxy and Materials) research team
75
Documents
Identifiants chercheurs
- charles-cornet
- 0000-0002-1363-7401
- Google Scholar : https://scholar.google.fr/citations?user=6MVy6kAAAAAJ&hl=fr&oi=ao
- IdRef : 112108571
Présentation
### **Research projects**
\*2023-2027: PEPR Hydrogène décarboné - France 2030: “Robust, cost efficient aNd AUTonomous PhotoelectrochemIcaL cells with III-V thin films on Si for practical hydrogen prodUction. (NAUTILUS)”: coordinator.
\*2022-2026: PEPR Electronique - France 2030: “Optical Frequency Combs On a Chip (OFCOC)”: contributor, growth.
\*2021-2025: EU COST action: “European Network for Innovative and Advanced Epitaxy (OPERA)”: secondary proposer, Management committee member.
\*2021-2025: ANR PRC project “collaborative”: “PhysIcAl properties of hybrid semimetal/semicoNductor III-V/Si maTerials (PIANIST)”: coordinator, growth, simulation, optoelectronic properties.
\*2021-2025: ANR PRC project “collaborative”: “Nucleation and growth of III-V on Si explored in situ (NUAGES)”: local coordinator, growth, simulation.
\*2021-2025: PIA project Equipex NanoFutur: FOTON local scientific coordinator.
\*2021-2024: ANR PRC project “collaborative”: “Light COnveRsioN by photoinduced‐electrochemiluminescence (LICORN)”: contributor, growth.
\*2020-2023: ANR PRCE project “collaborative with a company”: “High-Efficiency Epitaxial CIGS-Silicon Tandem Solar Cell (EPCIS)”: contributor, growth.
\*2019-2022: ANR PRC project “collaborative”: “Improvement of photovoltaic Conversion Efficiency by acting on thermalization MecANisms (ICEMAN)”: contributor, growth.
\*2018-2021: ANR young researcher grant (projet jeune chercheur ANR): “secOnd oRder oPtical pHenomEna in galliUm phosphide microdisks on Silicon (ORPHEUS)”: contributor, growth and simulation.
\*2015-2018: ANR PRC project “collaborative”: “Advanced aNalysis of III-V/Si nucleaTIon for highly integrated PhOtonic Devices (ANTIPODE)”: coordinator, growth and simulation.
\*2014-2017: Labex Cominlabs project: “3D optical manycores”: contributor.
\*2012-2015: ANR “blanc” project: “Epitaxial integration of III-V optoelectronic devices on silicon (OPTOSI)”: project co-writer, contributor.
\*2012-2014: ANR young researcher grant (projet jeune chercheur ANR): “Silicon photonics with diluted nitride coherent integration (SINPHONIC)”: project main writer, coordinator, WP leader, contributor.
\*2011-2014: National (3) and international (1) beam time allocation at European Synchrotron Radiation Facility (ESRF) on CRG lines D2AM and BM-32.
\*2011-2014: ANR PROGELEC project: “Monolithic integration of high efficiency III-V solar cells on silicon (MENHIRS)”: project co-writer, contributor and member of the administrative and financial staff.
\*2011-2012: C’nano NANOTRANS project (C’nano Nord-ouest): “dilute nitride quantum dots: relationship between morphology, electronic structure and optical properties”: project co-writer, joint coordinator, contributor.
\*2004-2009: FP6 European network of excellence on Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE): contributor.
\*2004-2008: FP6 European Network of Excellence on Photonic Integrated Components and Circuits (EPIXNET): contributor.
### **Awards**
\*Vebleo Fellow (2021).
\* Innovation award of the “pôle de compétitivité Images et Réseaux”, for the SINPHONIC ANR project (2013).
\* Young researcher award of “Région Bretagne” (2007)
\* Best Ph. D. prize of the SANDiE European network of excellence (2006)
### **Short CV**
- 2020-present: INSA, Rennes, France
Position : Professor at INSA Rennes, Institut FOTON (CNRS), head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of III-V/Si-based light emitters/absorbers on silicon for photonics and energy materials applications. Solar hydrogen production with photo-electrochemical cells.
- 2007-2020: INSA, Rennes, France
Position : “Maître de Conférences” (Ass. Prof., HDR), at FOTON CNRS Laboratory. Co-head of the “photonics on silicon” research program. Since 2017, head of the “[Optoelectronics, Heteroepitaxy and Materials (OHM) research group](http://foton.cnrs.fr/v2016/spip.php?rubrique33)”. Personal Research field: Growth, structural, electronic and optical properties of GaP-based light emitters/absorbers on silicon for photonics and energy materials applications.
- 2006–2007: INSA Rennes, France
Position: Post-doctoral fellow with teaching activities at FOTON CNRS Laboratory. Research topic: Growth and characterization of InAs/GaP quantum dots.
- 2003–2006: INSA, Rennes (France), TU Berlin (Germany) and KU Leuven (Belgium)
Position: Physics PhD Thesis on “electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate” at INSA-Rennes (France) in collaboration with TU Berlin, KU Leuven and TU Eindhoven within European network of excellence SANDIE.PhD Thesis supervised by Pr. J. Even. Research topic: Electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate.
- 2003: “Diplôme d’Etudes Approfondies” (DEA = MSc2 degree) of Physics: light and matter interaction, at University of Rennes 1,France. Highest distinction, ranked first.
Position: Master 2 training period at LENS laboratory (“Laboratoire d’Etude des Nanostructures à Semiconducteurs”). Research topic: Absorption measurements and simulations of InAs/InP (113)B quantum dots.
- 2001-2002: “Agrégation de Physique” passed at Ecole Normale Supérieure (ENS – Paris, France).
- 2001: Center for Quantum Electronics, Hanoi (Vietnam)
Position: Master 1 training period at CQE laboratory. Research topic: Time-resolved spectroscopy of tunable dye lasers
- …-2000: Paris-Sud University, Orsay (France)
“Licence”, “Maîtrise” and “Magistère” (BSc and MSc1 degrees) of fundamental physics at Paris-Sud University (Université Paris XI – Orsay, France)
Position: BSc training period at “Laboratory of the linear accelerator” (particle physics). Research topic: Analysis of DIRC performances in the frame of the Babar experiment
### **Teaching Activities**
\* Energetics and environment: from nuclear to renewable energies.
\* Applied quantum mechanics (quantum mechanic for beginners).
\* Thermodynamics.
Compétences
-Materials for Photonics and Energy / Photovoltaics and Solar Hydrogen
-III-V semiconductors and Silicon
-Physics of semiconductors: modeling of nanostructures, bandstructures, bandlineups
-Optical and structural properties of semiconductors compounds and devices
-Epitaxy and Ultra-High Vacuum crystal growth techniques
-Atomic Force Microscopy (AFM) and related near-field techniques
-Surface and volume diffraction (RHEED, XRD)
Publications
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MBE-grown GaAs on a low-cost Si substrate for solar hydrogen productionEMRS Fall Meeting 2022, European Materials Research Society, Sep 2022, Warsaw, Poland
Communication dans un congrès
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Tunable bandgap III-V alloys on a low-cost Si substrate for solar-assisted water splittingInternational Workshop on Emerging Solar Energy Materials and Applications (ESEMA 2022), May 2022, Porquerolles, France
Communication dans un congrès
hal-03968129v1
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Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
Communication dans un congrès
hal-03402743v1
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III-V/Si photoelectrodes with ambipolar properties5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
Communication dans un congrès
hal-03408282v1
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Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronicsWebinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India
Communication dans un congrès
hal-03588366v1
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III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production21st International Conference on Molecular Beam Epitaxy (IC-MBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03392254v1
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GaPSb/Si tandem material with APBs for efficient overall water splittingJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Communication dans un congrès
hal-03032905v1
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Random crystal polarity of Gallium phosphide microdisks on siliconJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Communication dans un congrès
hal-03101371v1
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GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
Communication dans un congrès
hal-03102622v1
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Universal growth mechanism of III-V/Si: using antiphase boundaries for devices.Réunion plénière du GDR Pulse (PULSE 2019), Jul 2019, Clermont-Ferrand, France
Communication dans un congrès
hal-02189095v1
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III-V/Si photoelectrodes: a new route for solar hydrogen production11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France
Communication dans un congrès
hal-02305423v1
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
Communication dans un congrès
hal-01496667v1
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
hal-01496924v1
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(In)GaP integration on Si for photonics and energyEuropean Materials Research Society - Fall Meeting 2015 (E-MRS 2015 Fall Meeting), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01497184v1
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GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States. pp.93580H, ⟨10.1117/12.2081376⟩
Communication dans un congrès
hal-01166431v1
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147506v1
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Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cellEuropean Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203374v1
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Towards the III-V/Si CPV on Si substratesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01403375v1
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Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania
Communication dans un congrès
hal-01497190v1
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Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States
Communication dans un congrès
hal-01497194v1
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Intégration pseudomorphique dans la filière GaP/Si pour les applications lasers sur pucejournées thématiques du GDR Ondes GT2, Nov 2014, Orsay, France
Communication dans un congrès
hal-01114901v1
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Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès
hal-01115312v1
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Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
Communication dans un congrès
hal-01114912v1
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Optimisation des propriétés structurale de l'interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandemJournées nationales du Photovoltaïque JNPV 2013, Dec 2013, Dourdan, France
Communication dans un congrès
hal-00918758v1
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Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Communication dans un congrès
hal-00918754v1
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UHVCVD-MBE growth cluster for III-N-V/Si solar cellsCompound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918735v1
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UHVCVD-MBE growth for tandem solar cells4th PhotoVoltaic Technical Conference (PVTC 2013), May 2013, Aix-en-Provence, France
Communication dans un congrès
hal-00918732v1
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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cellsJournées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France
Communication dans un congrès
hal-00788478v1
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Potentiality of GaAsPN and InGaPN for photovoltaic applications3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France
Communication dans un congrès
hal-00726855v1
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Dilute nitride GaNAsP for photonic applications on siliconInternational Symposium on nitrides (ISNT), 2012, saint-Malo, France
Communication dans un congrès
hal-00726885v1
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Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cellsinternational conference on MBE, 2012, Japan
Communication dans un congrès
hal-00726772v1
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Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cellsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
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InGaPN and GaAsPN layers for tandem solar cells on siliconEuropean materials research society international conference (EMRS), 2012, Strasbourg, France
Communication dans un congrès
hal-00726850v1
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caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomiqueJournées de la microscopie champ proche Bretagne, Jun 2010, Rennes, France. pp.1
Communication dans un congrès
hal-00504500v1
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Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μmSecond French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23
Communication dans un congrès
hal-00491459v1
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Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitationICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩
Communication dans un congrès
hal-00491873v1
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Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing propertiesSandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1
Communication dans un congrès
hal-00504470v1
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Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩
Communication dans un congrès
hal-00491468v1
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Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitationIWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1
Communication dans un congrès
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩
Communication dans un congrès
hal-00491480v1
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III-V GaP solar cells on silicon12è Journées Nationales du PhotoVoltaïque (JNPV 2022), Nov 2022, Dourdan, France
Poster de conférence
hal-03968270v1
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MBE-grown GaAs(x)P(1-x)/Si photoelectrodes for solar hydrogen production21st International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2021, Mexico (virtual), Mexico
Poster de conférence
hal-03402702v1
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Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizationsInternational Symposium : 20th Anniversary of LPQM, Apr 2019, Cachan, France
Poster de conférence
hal-02882424v1
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Antiphase boundaries in InGaP/SiGe/Si : structural and optical propertiesEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018
Poster de conférence
hal-01864388v1
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Excitons bounded around In-rich antiphase boundaries34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France. 2018
Poster de conférence
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Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. 2018
Poster de conférence
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Poster de conférence
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GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. 2016
Poster de conférence
hal-01496917v1
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GaAsPN Single and Tandem Solar Cells on Silicon19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
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Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on siliconEuro-MBE 2015, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147439v1
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Electroluminescence de boites quantiques InGaAs/GaP et ingénérie de bande des couches d’injection laser AlGaP/GaPOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France
Poster de conférence
hal-01497243v1
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Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de siliciumOptique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France
Poster de conférence
hal-01497238v1
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Development of GaAsPN alloy for its integration in III-V/Si tandem solar cellWorkshop on above 25% efficiency solar cells via low cost approaches, Jul 2014, Palaiseau, France
Poster de conférence
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Impact of annealing on the performances of GaAsPN-based solar cellsCompound Semiconductor Week 2014, May 2014, Montpellier, France. 2014
Poster de conférence
hal-01115039v1
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Electrical injection in GaP-based laser waveguides and active areas26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), pp.P23, 2014, ⟨10.1109/ICIPRM.2014.6880545⟩
Poster de conférence
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Annealing effect on electrical properties of GaAsPN solar cells29th European PV Solar Energy Conference (EU PVSEC 2014), Sep 2014, Amsterdam, Netherlands. 2014
Poster de conférence
hal-01115032v1
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Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam EpitaxyMolecular Beam Epitaxy (Second Edition)From Research to Mass Production, pp.637-648, 2018, ⟨10.1016/B978-0-12-812136-8.00030-X⟩
Chapitre d'ouvrage
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