Christophe Raynaud

Publications

Article dans une revue (58)

Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩ Article dans une revue hal-04276812v1
Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes P. Vigneshwara Raja,Christophe Raynaud,Besar Asllani,Hervé Morel,Dominique Planson Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩ Article dans une revue hal-04199489v1
Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs O. Aviñó-Salvadó,Cyril Buttay,F. Bonet,C. Raynaud,P. Bevilacquaet al. IEEE Transactions on Industrial Electronics, In press, ⟨10.1109/TIE.2023.3281705⟩ Article dans une revue hal-04147050v1
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja,Christophe Raynaud,Camille Sonneville,Atse Julien Eric N’dohi,Hervé Morelet al. Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩ Article dans une revue hal-03826217v1
Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers Christophe Raynaud,Marie-Laure Locatelli,J.F. Mogniotte,R. Arvinte,G. Grosset Materials Science and Engineering: B, 2021, 263, pp.114840. ⟨10.1016/j.mseb.2020.114840⟩ Article dans une revue hal-03196323v1
Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC Jean-François Mogniotte,Christophe Raynaud,Mihai Lazar,Loïc Michel Romanian Journal of Information Science and Technology, 2019, 22 (2), pp.103-110 Article dans une revue hal-02405784v1
Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors Dominique Planson,Besar Asllani,Luong-Viet Phung,Pascal Bevilacqua,Hassan Hamadet al. Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩ Article dans une revue hal-02053053v1
Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode Teng Zhang,Christophe Raynaud,Dominique Planson Materials Science Forum, 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩ Article dans une revue hal-02436812v1
Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature Oriol Aviño Salvado,Besar Asllani,Cyril Buttay,Christophe Raynaud,Hervé Morel IEEE Transactions on Electron Devices, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩ Article dans une revue hal-02418097v1
Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts Teng Zhang,Christophe Raynaud,Dominique Planson European Physical Journal: Applied Physics, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩ Article dans une revue hal-02047099v1
Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode Dominique Planson,Besar Asllani,Hassan Hamad,Marie-Laure Locatelli,R Arvinteet al. Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩ Article dans une revue hal-01818806v1
Silicon Carbide Technology of MESFET-Based Power Integrated Circuits Jean-François Mogniotte,Dominique Tournier,Christophe Raynaud,Mihai Lazar,Dominique Plansonet al. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩ Article dans une revue hal-01864533v1
Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions Gabriel Ferro,Selsabil Sejil,Mihai Lazar,D. Carole,C. Brylinskiet al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩ Article dans une revue hal-01615190v1
OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K Hassan Hamad,Dominique Planson,Christophe Raynaud,Pascal Bevilacqua Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩ Article dans une revue hal-01865068v1
SiC integrated circuits for smart power converter J F Mogniotte,Mihai Lazar,Christophe Raynaud,Dominique Planson,B Allard Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399 Article dans une revue hal-04277111v1
Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections Julien Pezard,Véronique Soulière,Mihai Lazar,Naoufel Haddour,François Buretet al. Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩ Article dans une revue hal-01644735v1
Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p&lt;sup&gt;++&lt;/sup&gt; Emitters Selsabil Sejil,Loïc Lalouat,Mihai Lazar,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩ Article dans une revue hal-01648360v1
Optimization of VLS Growth Process for 4H-SiC P/N Junctions Selsabil Sejil,Mihai Lazar,Frédéric Cayrel,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩ Article dans une revue hal-01388031v1
A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Christophe Raynaudet al. IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩ Article dans une revue hal-01387992v1
Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti&lt;sub&gt;3&lt;/sub&gt;SiC&lt;sub&gt;2&lt;/sub&gt; Phase Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Christophe Raynaudet al. Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩ Article dans une revue hal-01388027v1
Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Sigo Scharnholz,Bertrand Vergneet al. Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩ Article dans une revue hal-01388035v1
VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩ Article dans une revue hal-01387983v1
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Sigo Scharnholz,Dominique Planson Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩ Article dans une revue hal-01387987v1
2D Electric field imagery in 4H-SiC power diodes using OBIC technique Hassan Hamad,Pascal Bevilacqua,Dominique Planson,Christophe Raynaud,Dominique Tournieret al. European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩ Article dans une revue istex hal-01387989v1
P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices Mihai Lazar,Selsabil Sejil,L. Lalouat,Christophe Raynaud,D. Caroleet al. Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342 Article dans une revue hal-01626119v1
Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Dominique Tournier,Bertrand Vergneet al. Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩ Article dans une revue hal-01387924v1
Thermal Stability of Silicon Carbide Power JFETs Cyril Buttay,Rémy Ouaida,Hervé Morel,Dominique Bergogne,Christophe Raynaudet al. IEEE Transactions on Electron Devices, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩ Article dans une revue hal-00881667v1
Thermal Runaway Robustness of SiC VJFETs Rémy Ouaida,Cyril Buttay,Anh Dung Hoang,Raphaël Riva,Dominique Bergogneet al. Materials Science Forum, 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩ Article dans une revue hal-00799884v1
Thermal stability of silicon-carbide power diodes Cyril Buttay,Christophe Raynaud,Hervé Morel,Gabriel Civrac,Marie-Laure Locatelliet al. IEEE Transactions on Electron Devices, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩ Article dans une revue hal-00672440v1
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Gontran Pâques,Sigo Scharnholzet al. Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩ Article dans une revue hal-00803059v1
SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements Mihai Lazar,François Jomard,Duy Minh M Nguyen,Christophe Raynaud,Gontran Pâqueset al. Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩ Article dans une revue hal-02166414v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩ Article dans une revue hal-00799902v1
Optical triggering of SiC thyristors using UV LEDs Nicolas Dheilly,Gontran Pâques,Sigo Scharnholz,Pascal Bevilacqua,Christophe Raynaudet al. Electronics Letters, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩ Article dans une revue hal-00661435v1
State of the art of high temperature power electronics Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacquaet al. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩ Article dans une revue istex hal-00597432v1
Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection Duy Minh Nguyen,Gontran Pâques,Nicolas Dheilly,Christophe Raynaud,Dominique Tournieret al. Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩ Article dans une revue hal-02168909v1
Experimental determination of impact ionization coefficients in 4H-SiC Duy Minh Nguyen,Christophe Raynaud,Nicolas Dheilly,Mihai Lazar,Dominique Tournieret al. Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩ Article dans une revue istex hal-00661429v1
Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices Christophe Raynaud,Dominique Tournier,Hervé Morel,Dominique Planson Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩ Article dans une revue hal-02186368v1
Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses Christophe Raynaud,Duy Minh Nguyen,Pierre Brosselard,Amador Pérez-Tomás,Dominique Plansonet al. Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩ Article dans une revue hal-00391462v1
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah,Damien Risaletto,Christophe Raynaud,Kamel Besbes,Dominique Bergogneet al. Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Article dans une revue hal-04452237v1
OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes Christophe Raynaud,Daniel Loup,Phillippe Godignon,Raul Perez Rodriguez,Dominique Tournieret al. Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.1007-1010. ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩ Article dans une revue hal-04369314v1
Composants de puissance en SiC. Etat de l'art Dominique Planson,Christophe Raynaud,Pierre Brosselard,Dominique Bergogne,Mihai Lazaret al. European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611 Article dans une revue hal-04371563v1
P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar,Christophe Jacquier,Christiane Dubois,Christophe Raynaud,Gabriel Ferroet al. Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩ Article dans une revue hal-04362494v1
Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩ Article dans une revue hal-02458100v1
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension S.R. Wang,Christophe Raynaud,Dominique Planson,Mihai Lazar,Jean-Pierre Chante Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩ Article dans une revue hal-04091213v1
Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization K. Isoird,Mihai Lazar,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩ Article dans une revue hal-02151720v1
Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements Christophe Raynaud,Karine Isoird,Mihai Lazar,Cm Johnson,N. Wright Journal of Applied Physics, 2002, 91 (12), pp.9841-9847 Article dans une revue hal-00141477v1
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Mihai Lazar,Christophe Raynaud,Dominique Planson,Marie-Laure Locatelli,K. Isoirdet al. Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩ Article dans une revue hal-02151714v1
Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories S. Croci,C. Plossu,B. Balland,Christophe Raynaud,Pierre Boivin Journal of Non-Crystalline Solids, 2001, 280 (1-3), pp.202-210 Article dans une revue hal-00141506v1
Silica films on silicon carbide: a review of electrical properties and device applications Christophe Raynaud Journal of Non-Crystalline Solids, 2001, 280 (1-3), pp.1-31 Article dans une revue hal-00141505v1
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩ Article dans une revue hal-02151710v1
Calculation of theoretical capacitance-voltage characteristics of 6H-SiC metal-oxide-semiconductor structures Christophe Raynaud Journal of Applied Physics, 2000, 88 (1), pp.424-428 Article dans une revue hal-00141518v1
Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation Karine Isoird,Laurent Ottaviani,Marie-Laure Locatelli,Dominique Planson,Christophe Raynaudet al. Materials Science Forum, 2000, 338-342, pp.1363-1366. ⟨10.4028/www.scientific.net/MSF.338-342.1363⟩ Article dans une revue hal-02281030v1
Micro-irradiation experiments in MOS transistors using synchrotron radiation J. Autran,P. Masson,N. Freud,Christophe Raynaud,C. Riekel IEEE Transactions on Nuclear Science, 2000, 47 (3 Part 1), pp.574-579 Article dans une revue hal-00141515v1
Characterisation of deep level trap centres in 6H-SiC p-n junction diodes K. Ghaffour,V. Lauer,A. Souifi,G. Guillot,Christophe Raynaudet al. Materials Science and Engineering: B, 1999, 66 (1-3), pp.106-110 Article dans une revue hal-00141523v1
Electrical characterization of silicon carbide n(+)pp(+) diodes with an N-implanted n(+) emitter Christophe Raynaud,K. Ghaffour,S. Ortolland,Marie-Laure Locatelli,K. Souifiet al. Journal of Applied Physics, 1998, 84 (6), pp.3073-3077 Article dans une revue hal-00141570v1
Surface effects on current mechanisms in 6H-SiC n(+)pp(+) structures passivated with a deposited oxide S. Ortolland,Christophe Raynaud,Marie-Laure Locatelli,Jean-Pierre Chante,A. Senes Journal of Applied Physics, 1998, 84 (3), pp.1688-1692 Article dans une revue hal-00141583v1
Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures A. A. Lebedev,S. Ortolland,Christophe Raynaud,Marie-Laure Locatelli,Dominique Plansonet al. Semiconductors, 1997, 31 (7), pp.735-737 Article dans une revue hal-00141601v1
Effect of boron diffusion on the high-voltage behavior of 6H-SiC p(+)nn(+) structures S. Ortolland,Christophe Raynaud,Jean-Pierre Chante,A. A. Lebedev,A. N. Andreevet al. Journal of Applied Physics, 1996, 80 (9), pp.5464-5468 Article dans une revue hal-00141621v1

Communication dans un congrès (63)

Performance-Limiting Traps in High-Power 4H-SiC PiN Diodes Identified by Integrated DLTFS and TCAD Investigations Shikha Kumari,Besar Asllani,Christophe Raynaud,Dominique Planson,Pierre Brosselardet al. 7th International Conference on Emerging Electronics (ICEE 2025), Dec 2025, Bengalore, India. ⟨10.1109/ICEE67165.2025.11409767⟩ Communication dans un congrès hal-05571350v1
Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes P Vigneshwara Raja,Christophe Raynaud,Besar Asllani,Herve Morel,Dominique Planson International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India Communication dans un congrès hal-03990840v1
Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ Communication dans un congrès hal-03856578v1
Robustness study of 1700 V 45 mΩ SiC MOSFETs Quentin Molin,Mehdi Kanoun,Christophe Raynaud,Hervé Morel 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩ Communication dans un congrès hal-01942728v1
Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode Teng Zhang,Christophe Raynaud,Dominique Planson ECSCRM'18, Sep 2018, Birmingham, United Kingdom Communication dans un congrès hal-02004837v1
Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H Teng Zhang,Christophe Raynaud,Dominique Planson Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France Communication dans un congrès hal-02983328v1
SiC lateral Schottky diode technology for integrated smart power converter Jean-François Mogniotte,Christophe Raynaud,Mihai Lazar,Bruno Allard,Dominique Planson 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩ Communication dans un congrès hal-01864545v1
Repetitive short-circuit measurement on SiC MOSFET Quentin Molin,Christophe Raynaud,Mehdi Kanoun,Hervé Morel ECSCRM'18, Sep 2018, Birmingham, United Kingdom Communication dans un congrès hal-01980834v1
Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode Dominique Planson,Besar Asllani,Hassan Hamad,Marie-Laure Locatelli,Lumei Weiet al. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4 Communication dans un congrès hal-02138767v1
First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments Jean-François Mogniotte,Mihai Lazar,Christophe Raynaud,Bruno Allard CAS, Oct 2017, Sinaia, Romania. ⟨10.1109/SMICND.2017.8101191⟩ Communication dans un congrès hal-01646319v1
Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections Julien Pezard,V. Souliere,Mihai Lazar,Naoufel Haddour,François Buretet al. ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52 Communication dans un congrès hal-02138738v1
Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy Selsabil Sejil,Loïc Lalouat,Mihai Lazar,Davy Carole,Christian Brylinskiet al. ECSCRM'16, Sep 2016, Halkidiki, Greece Communication dans un congrès hal-02138729v1
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices Mihai Lazar,Davy Carole,Christophe Raynaud,Gabriel Ferro,Selsabil Sejilet al. CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ Communication dans un congrès hal-01388019v1
Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions Selsabil Sejil,Mihai Lazar,Davy Carole,Christian Brylinski,Dominique Plansonet al. Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States Communication dans un congrès hal-02428659v1
Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Dominique Planson CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩ Communication dans un congrès hal-01388024v1
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Sigo Scharnholz,Dominique Planson ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08 Communication dans un congrès hal-02133683v1
Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase Tony Abi-Tannous,Maher Soueidan,G. Ferro,Mihai Lazar,Christophe Raynaudet al. ICSCRM, Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138520v1
4H-SiC P-N junctions realized by VLS for JFET lateral structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 Communication dans un congrès hal-02133686v1
Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC Hassan Hamad,Pascal Bevilacqua,Dominique Planson,Christophe Raynaud,Dominique Tournieret al. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065307v1
Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects Dominique Planson,Pierre Brosselard,Karine Isoird,Mihai Lazar,Luong Viêt Phunget al. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ Communication dans un congrès hal-01388002v1
Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes Hassan Hamad,Pascal Bevilacqua,Christophe Raynaud,Dominique Planson 2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩ Communication dans un congrès hal-01388043v1
Thermal stability of SiC JFETs in conduction mode Rémy Ouaida,Cyril Buttay,Raphaël Riva,Dominique Bergogne,Christophe Raynaudet al. EPE, Sep 2013, Lille, France. paper 223, ⟨10.1109/EPE.2013.6631881⟩ Communication dans un congrès hal-00874471v1
SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements Mihai Lazar,François Jomard,Duy Minh Nguyen,Christophe Raynaud,Gontran Pâqueset al. ICSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747300v1
Thermal Runaway Robustness of SiC VJFETs Rémy Ouaida,Cyril Buttay,Anh Dung Hoang,Raphaël Riva,Dominique Bergogneet al. CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-00759975v2
Thermal requirements of SiC Power Devices Cyril Buttay,Christophe Raynaud,Hervé Morel,Gabriel Civrac,Marie-Laure Locatelliet al. 6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France Communication dans un congrès hal-00672631v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD Communication dans un congrès hal-00661500v1
Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection Duy Minh Nguyen,Gontran Pâques,Nicolas Dheilly,Christophe Raynaud,Dominique Tournieret al. CSCRM, Aug 2010, Oslo, Norway Communication dans un congrès hal-00661470v1
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Gontran Pâques,Sigo Scharnholzet al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747298v1
Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization Cyril Buttay,Amandine Masson,Jianfeng Li,Mark C. Johnson,Mihai Lazaret al. HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7 Communication dans un congrès hal-00672619v1
SiC Power Semiconductor Devices for new Applications in Power Electronics Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Nicolas Dheilly,Hervé Morelet al. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ Communication dans un congrès hal-00373016v1
Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters Dominique Bergogne,Hervé Morel,Dominique Tournier,Bruno Allard,Dominique Plansonet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 Communication dans un congrès hal-00372982v1
Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses Christophe Raynaud,D M Nguyen,Pierre Brosselard,A Pérez-Tomás,Dominique Plansonet al. European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain Communication dans un congrès hal-03331775v1
Contact ohmique de faible résistivité sur SiC-4H dopé type-P M Soueidan,Mihai Lazar,D. Tournier,Dominique Planson,Christophe Raynaudet al. 4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France Communication dans un congrès hal-04606381v1
Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC D M Nguyen,Christophe Raynaud,Mihai Lazar,H Vang,Dominique Planson ICSCRM'2007, Oct 2007, Otsu, Japan Communication dans un congrès hal-02961607v1
OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes Christophe Raynaud,Daniel Loup,Philippe Godignon,Raul Perez Rodriguez,Dominique Tournieret al. CSCRM, Oct 2006, Newcastle upon Tyne, United Kingdom. pp.1007-1010, ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩ Communication dans un congrès hal-00368922v1
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah,Damien Risaletto,Christophe Raynaud,Kamel Besbes,Dominique Bergogneet al. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Communication dans un congrès hal-02958620v1
Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés Johnny Gié,Mihai Lazar,Pierre Brosselard,Dominique Planson,Christophe Raynaud 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04619604v1
Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal Heu Vang,Christophe Raynaud,Pierre Brosselard,Mihai Lazar,Pierre Cremillieuet al. 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04618792v1
P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar,C Jacquier,Ch Dubois,Christophe Raynaud,G Ferroet al. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953086v1
Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits Dominique Planson,Dominique Tournier,Jean-Pierre Chante,Pascal Bevilacqua,Christophe Raynaudet al. International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China Communication dans un congrès hal-02468376v1
HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES Dominique Planson,Marie-Laure Locatelli,Mihai Lazar,Christophe Raynaud,Jean-Pierre Chanteet al. 10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France Communication dans un congrès hal-04621819v1
SiC-based current limiter devices Jean-Pierre Chante,Dominique Tournier,Dominique Planson,Christophe Raynaud,Mihai Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ Communication dans un congrès hal-04032970v1
Conception d'un transistor JFET 5 kV en SiC-4H Pierre Brosselard,Dominique Planson,Léa Di Cioccio,Thierry Billon,Sigo Scharnholzet al. 10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France Communication dans un congrès hal-04621465v1
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Pierre Brosselard,Thierry Bouchet,Dominique Planson,Sigo Scharnholz,Gontran Pâqueset al. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953080v1
Electrothermal simulations of silicon carbide current limiting devices Dominique Planson,J.P. Chante,M. Lazar,P. Brosselard,Christophe Raynaudet al. 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ Communication dans un congrès hal-02498210v1
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Pierre Brosselard,Volker Zorngiebel,Dominique Planson,Sigo Scharnholz,J.-P Chanteet al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503456v1
Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension Christophe Raynaud,M. Lazar,Dominique Planson,J.-P Chante,Z. Sassi International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02498145v1
Silicon Carbide specific components for power electronics system protection J.-P Chante,Dominique Planson,Christophe Raynaud,Marie-Laure Locatelli,M. Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503449v1
Design and simulation of a planar anode GTO thyristor on SiC Pierre Brosselard,Dominique Planson,Sigo Scharnholz,V. Zorngiebel,Mihai Lazaret al. CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ Communication dans un congrès hal-00410085v1
Substrat SiCOI : Avancées vers les applications « System on Chip » Nicolas Daval,François Templier,Fabrice Letertre,Marie-Laure Locatelli,Dominique Plansonet al. EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France Communication dans un congrès hal-04400220v1
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC Roberta Nipoti,Francesco Moscatelli,Andrea Scorzoni,Antonella Poggi,Gian Carlo Cardinaliet al. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ Communication dans un congrès hal-02485106v1
Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device F. Nallet,P. Godignon,Dominique Planson,Christophe Raynaud,J.P. P Chante 14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩ Communication dans un congrès hal-02471269v1
OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension S.R. Wang,Christophe Raynaud,Dominique Planson,Mihai Lazar,Jean-Pierre Chante European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464381v1
Limiteur de courant à forte densité de puissance en carbure de silicium Dominique Tournier,Philippe Godignon,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France Communication dans un congrès hal-04398450v1
Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier,Xavier Jorda,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02458130v1
SiC On Insulator as substrate for power Schottky diodes N. Daval,F Templier,F. Letertre,Dominique Planson,Léa Di Cioccioet al. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464356v1
Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird,Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France Communication dans un congrès hal-03712596v1
A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects M. Lazar,Christophe Raynaud,Dominique Planson,Marie-Laure Locatelli,K. Isoirdet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476227v1
4H-SiC bipolar power diodes realized by ion implantation M. Lazar,Dominique Planson,K. Isoird,Marie-Laure Locatelli,Christophe Raynaudet al. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ Communication dans un congrès hal-02145397v1
Realization of a High Current and Low RON 600V Current Limiting Device F Nallet,P Godignon,Dominique Planson,Christophe Raynaud,Jean-Pierre P Chante International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975963v1
Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing Mihai Lazar,Karine Isoird,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States Communication dans un congrès hal-02275712v1
Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization K Isoird,M Lazar,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975956v1
The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC A A Lebedev,A M Strel'Chuk,S. Ortolland,Christophe Raynaud,Marie-Laure Locatelliet al. International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan Communication dans un congrès hal-03712441v1

Chapitre d'ouvrage (1)

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation Christophe Raynaud,Duy Minh Nguyen,Nicolas Dheilly,Dominique Tournier,Pierre Brosselardet al. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 Chapitre d'ouvrage hal-00661529v1