Clément Sire
2
Documents
Identifiants chercheurs
- clement-sire
- ResearcherId : X-1397-2019
- 0000-0003-4089-4013
- Google Scholar : http://scholar.google.com/citations?user=TjUHxh4AAAAJ&hl=en
- IdRef : 029759331
- 0000-0000-3408-9401
- ResearcherId : http://www.researcherid.com/rid/X-1397-2019
Présentation
After a Ph.D. on the electronic properties and the stability of quasicrystals (1990; ENS Paris & Univ. P. & M. Curie), I spent two years at the AT&T Bell Labs (NJ, USA). There, I worked on high-Tc superconductivity but also started working on nonequilibrium statistic physics, which has since become my main domain of research: stochastic processes and their physical applications, phase separation and coarsening systems, physics of society, and behavioral biology...
Publications
- 2
- 2
- 2
- 1
Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scalesApplied Physics Letters, 2007, pp.91 242905
Article dans une revue
hal-00394766v1
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Statistics of electrical breakdown in high-K materials from millimeter to nanometer length scales: macroscopic testing vs. conductive-AFMMRS Fall Meeting, Nov 2007, Boston, United States
Communication dans un congrès
hal-00396816v1
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