Cyrille LE ROYER

Identifiants chercheurs

IdHAL :

cyrillele-royer

ORCID :

0009-0002-3469-0516

Publications

Article dans une revue (12)

Impact of the Recessed Gate Depth on the GaN MIS-HEMT Performances: New Insights on Mobility Extraction Clémentine Piotrowicz,Blend Mohamad,Nathalie Malbert,Stéphane Becu,Simon Ruelet al. Journal of Applied Physics, 2024, 135 (17), pp.175701. ⟨10.1063/5.0205840⟩ Article dans une revue cea-04667617v1
Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors Maxime Legallais,Gauthier Lefevre,Simon Martin,Sébastien Labau,Franck Bassaniet al. Advanced Materials Interfaces, 2022, 9 (5), ⟨10.1002/admi.202101731⟩ Article dans une revue hal-04222343v1
Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors Bledion Rrustemi,Marie-Anne Jaud,François Triozon,Clémentine Piotrowicz,William Vandendaeleet al. Journal of Applied Physics, 2021, 130, pp.105704. ⟨10.1063/5.0058019⟩ Article dans une revue cea-04822316v1
Study of an Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage &lt;i&gt;V&lt;/i&gt;&lt;sub&gt;TH&lt;/sub&gt; Laura Vauche,Antoine Chanuel,Eugénie Martinez,Marie-Christine Roure,Cyrille Le Royeret al. ACS Applied Electronic Materials, 2021, 3 (3), pp.1170 - 1177. ⟨10.1021/acsaelm.0c01023⟩ Article dans une revue cea-04565961v1
Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage Carlos Diaz Llorente,Christoforos Theodorou,Jean-Pierre Colinge,Sorin Cristoloveanu,Sébastien Martinieet al. ECS Transactions, 2019, 89 (3), pp.111-120. ⟨10.1149/08903.0111ecst⟩ Article dans une revue hal-02415983v1
Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration Carlos Navarro,Meng Duan,Mukta Singh Parihar,Fikru Adamu-Lema,Stefan Cosemanet al. IEEE Transactions on Electron Devices, 2017, 64 (12), pp.4904-4909. ⟨10.1109/TED.2017.2759308⟩ Article dans une revue hal-02006997v1
Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM Carlos Navarro,Joris Lacord,Mukta Singh Parihar,Fikru Adamu-Lema,Meng Duanet al. IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩ Article dans une revue hal-02006362v1
Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes Heimanu Niebojewski,Cyrille Le Royer,Y. Morand,Olivier Rozeau,Marie-Anne Jaudet al. Solid-State Electronics, 2014, 97, pp.45-51. ⟨10.1016/j.sse.2014.04.028⟩ Article dans une revue hal-01000014v1
Electron-Hole Bilayer TFET: Experiments and Comments Alberto Revelant,Anthony Villalon,Yan Wu,Alexander Zaslavsky,Cyrille Le Royeret al. IEEE Transactions on Electron Devices, 2014, 61 (8), pp.2674-2681. ⟨10.1109/TED.2014.2329551⟩ Article dans une revue hal-02003477v1
Total Ionizing Dose Effects in Si-Based Tunnel FETs Lili Ding,Elena Gnani,Simone Gerardin,Marta Bagatin,Francesco Driussiet al. IEEE Transactions on Nuclear Science, 2014, 61 (6), pp.2874-2880. ⟨10.1109/TNS.2014.2367548⟩ Article dans une revue cea-04608345v1
Further Insights in TFET Operation Anthony Villalon,Gilles Le Carval,Sébastien Martinie,Cyrille Le Royer,Marie-Anne Jaudet al. IEEE Transactions on Electron Devices, 2014, 61 (8), pp.2893-2898. ⟨10.1109/TED.2014.2325600⟩ Article dans une revue hal-02003390v1
Z2-FET: A promising FDSOI device for ESD protection Yohann Solaro,Jing Wan,Pascal Fonteneau,Claire Fenouillet-Beranger,Cyrille Le Royeret al. Solid-State Electronics, 2014, 97, pp.23-29. ⟨10.1016/j.sse.2014.04.032⟩ Article dans une revue istex hal-02002977v1

Communication dans un congrès (18)

Temperature dependence of 1200V-10A SiC power diodes: impact of design and substrate on electrical performance Ahmad Abbas,Cyrille Le Royer,Romain Lavieville,Jérôme Biscarrat,Guillaume Gelineauet al. ICSCRM 2024 - the International Conference on Silicon Carbide and Related Materials, Sep 2024, Raleigh, United States. pp.581-583, ⟨10.4028/b-f6NMEP⟩ Communication dans un congrès cea-04754541v1
GaN and wide-bandgap semiconductor devices for power electronics applications Julien Buckley,Philippe Godignon,Cyrille Le Royer,Etienne Nowak,René Escoffieret al. APWS 2024 - The 11th Asia-Pacific Workshop on Widegap Semiconductors, Oct 2024, Busan, South Korea Communication dans un congrès cea-04766402v1
New insights using avalanche mode for pn-wafer evaluation of SiC diodes technology and design ruggedness Ahmad Abbas,Cyrille Le Royer,Romain Lavieville,Saliou Gningue,Rihab Chouket al. ISPSD 2024 - 36th International Symposium on Power Semiconductor Devices and ICs, Jun 2024, Brême, Germany. pp.176-179, ⟨10.1109/ISPSD59661.2024.10579466⟩ Communication dans un congrès cea-04754535v1
DLTS Investigation of Implantation-induced Defects in 4H-SiC Power Diodes Eric Vandermolen,Charles Leroux,Ahmad Abbas,Philippe Godignon,Cyrille Le Royeret al. WOCSDICE-EXMATEC 2024, K. Zekentes and E. Iliopoulos, FORTH, Greece, May 2024, Heraklion, Greece Communication dans un congrès hal-04673040v1
Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications Blend Mohamad,Cyrille Le Royer,Florian Rigaud-Minet,Clémentine Piotrowicz,Pedro Fernandes Paes Pinto Rochaet al. 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. ⟨10.1109/EDTM55494.2023.10102971⟩ Communication dans un congrès cea-04528484v1
Recent Achievements in Recessed Gate MOS-channel HEMT Technology Etienne Nowak,Blend Mohamad,Stéphane Becu,Jérôme Biscarrat,Cédric Masanteet al. WOCSDICE - EXMATEC, May 2023, Palerme, Italy Communication dans un congrès cea-04665737v1
Impact of gate morphology on electrical performances of recessed GaN-on Si MOS channel-HEMT for different channel orientations Clémentine Piotrowicz,Blend Mohamad,Pedro Fernandes Paes Pinto Rocha,N. Malbert,Simon Ruelet al. ISPSD 2023 - International Symposium on Power Semiconductor Devices and ICs, May 2023, Hong-Kong, Hong Kong SAR China. pp.382-385, ⟨10.1109/ISPSD57135.2023.10147642⟩ Communication dans un congrès cea-04528487v1
Recent advances in GaN power devices development at CEA-LETI Romain Gwoziecki,Julien Buckley,Cyrille Le Royer,Laura Vauche,Blend Mohamadet al. GaN MARATHON, Jun 2022, Venise, Italy Communication dans un congrès cea-03870230v1
Gallium nitride power devices for power conversion applications Julien Buckley,René Escoffier,Blend Mohamad,Stéphane Becu,Jérôme Biscarratet al. ENGE 2022 - The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment, Nov 2022, Jeju, South Korea Communication dans un congrès cea-03968435v1
Y-unction based methodology for accurate statistical extraction of HEMT device parameters for GaN technology R. Kom Kammeugne,Romeo Kom Kammeugne,Charles Leroux,Jacques Cluzel,Laura Vaucheet al. EUROSOI-ULIS 2020 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩ Communication dans un congrès cea-03167130v1
Innovative tunnel FET architectures Carlos Diaz Llorente,Sébastien Martinie,Sorin Cristoloveanu,Jean-Pierre Colinge,Cyrille Le Royeret al. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.25-28, ⟨10.1109/ULIS.2018.8354725⟩ Communication dans un congrès hal-02007301v1
Z2-FET memory for low power applications Mukta Singh Parihar,Kyunghwa Lee,Hassan El Dirani,Carlos Navarro,Joris Lacordet al. Semiconductor Memories Workshop, 2017 ESSDERC, Sep 2017, Leuven, Belgium Communication dans un congrès hal-02009925v1
Low-Power Z2-FET Capacitorless 1T-DRAM Mukta Singh Parihar,Kyung Hwa Lee,Hassan El Dirani,Carlos Navarro,Joris Lacordet al. 2017 IEEE International Memory Workshop (IMW), May 2017, Monterey, United States. pp.103-106, ⟨10.1109/IMW.2017.7939093⟩ Communication dans un congrès hal-02007121v1
New features in planar SiGe channel tunnel FETs performance and operation Cyrille Le Royer,Louis Hutin,Sebastien Martinie,Pascal Nguyen,Sylvain Barraudet al. 2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.91-92 Communication dans un congrès hal-02004156v1
A lesson from archeology: The buried gates Antoine Litty,Yohann Solaro,Hassan El Dirani,Sylvie Ortolland,Pascal Fonteneauet al. 2015 Advanced Research Workshop Future Trends in Microelectronics: Journey into the Unknown, Jun 2015, Mallorca, Spain Communication dans un congrès hal-02008421v1
First demonstration of ultrathin body c-SiGe channel FDSOI pMOSFETs combined with SiGe(:B) RSD: Drastic improvement of electrostatics (Vth,p tuning, DIBL) and transport (μ0, Isat) properties down to 23nm gate length Cyrille Le Royer,A. Villalon,M. Casse,D. Cooper,J. Mazurieret al. 2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. pp.16.5.1-16.5.4, ⟨10.1109/IEDM.2011.6131567⟩ Communication dans un congrès cea-04608302v1
A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals D. Deleruyelle,C. Leroyer,B. de Salvo,G. Lecarval,M. Gelyet al. Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404 Communication dans un congrès hal-00485182v1
Coulomb Blockade in Thin SOI Nanodevices D. Fraboulet,X. Jehl,D. Mariolle,Cyrille Le Royer,G. Le Carvalet al. 32nd European Solid-State Device Research Conference, Sep 2002, Firenze, France. pp.395-398, ⟨10.1109/ESSDERC.2002.194951⟩ Communication dans un congrès hal-04721130v1

Poster de conférence (1)

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the fully recessed gate architecture Cyrille Le Royer,Blend Mohamad,Jérôme Biscarrat,Laura Vauche,René Escoffieret al. ISPSD 2022 - IEEE 34th International Symposium on Power Semiconductor Devices and ICs, May 2022, Vancouver, Canada. 2022, ⟨10.1109/ISPSD49238.2022.9813672⟩ Poster de conférence cea-04577370v1

Brevet (2)

PROCEDE DE REALISATION D’UN DISPOSITIF ELECTRONIQUE A QUBIT(S) SUPRACONDUCTEUR(S) INCLUANT AU MOINS UN JOFET C. Leroyer,F. Nemouchi,Nicolas Posseme,Sébastien Kerdilès,François Lefloch France, N° de brevet: FR3134910. 2022 Brevet hal-04766050v1
PROCÉDÉ DE RÉALISATION D'UN DISPOSITIF QUANTIQUE Cyrille Le Royer,Fabrice Nemouchi,Nicolas Posseme,Sébastien Kerdiles,François Lefloch France, N° de brevet: FR3129564. 2021 Brevet hal-04749749v1