Damien Deleruyelle Full ProfessorINSA LyonINL - Institut des Nanotechnologies de Lyon (UMR CNRS 5270)

Publications

Article dans une revue (58)

Van der Waals Inverted-Floating-Gate Transistors for Artificial Intelligence Electronics Mohamed Soliman,Cédric Marchand,Aymen Mahmoudi,Neeraj Kumar Rajak,Takashi Taniguchiet al. ACS Nano, 2025, 19 (19), pp.18757-18768. ⟨10.1021/acsnano.5c03875⟩ Article dans une revue hal-05093881v1
Investigating Experimental Short Term Imprint Dynamics in Ferroelectric Hafnium Oxide Through Phase‐Field Modeling Kévin Alhada-Lahbabi,Benoit Manchon,Grégoire Magagnin,Chiara Lepri,Sara Gonzalezet al. Advanced Functional Materials, 2025, ⟨10.1002/adfm.202514094⟩ Article dans une revue hal-05248440v1
An Original Positive-Up-Negative-Down Protocol for Electrical Characterization of Antiferroelectric Materials Grégoire Magagnin,Martine Le Berre,Sara Gonzalez,Brice Gautier,Damien Deleruyelleet al. Nano Letters, In press, ⟨10.1021/acs.nanolett.5c00851⟩ Article dans une revue hal-05042560v1
Reinforcement Learning-Assisted Ferroelectric Domain Wall Design Using a Machine Learning Phase-Field Surrogate Damien Deleruyelle,Brice Gautier,Kévin Alhada-Lahbabi ACS Applied Electronic Materials, 2025, 7 (3), pp.1130-1141. ⟨10.1021/acsaelm.4c01984⟩ Article dans une revue hal-05006236v1
On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices Mischa Thesberg,Tetiana Obukhova,Damien Deleruyelle,Jens Trommer,Thomas Mikolajicket al. IEEE Transactions on Electron Devices, 2024, 71 (11), pp.6686-6690. ⟨10.1109/TED.2024.3459878⟩ Article dans une revue hal-05006261v1
Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks Alhada-Lahbabi Kévin,Deleruyelle Damien,Gautier Brice Nanoscale Advances, 2024, 6 (9), pp.2350-2362. ⟨10.1039/d3na01115a⟩ Article dans une revue hal-04814154v1
A numerical analysis of the short open load calibration robustness for capacitance measurements in scanning microwave microscopy Damien Richert,Damien Deleruyelle,José Morán-Meza,Khaled Kaja,Almazbek Imanalievet al. Measurement Science and Technology, 2024, 36 (1), pp.015013. ⟨10.1088/1361-6501/ad7e3b⟩ Article dans une revue hal-04814141v1
Machine learning surrogate for 3D phase-field modeling of ferroelectric tip-induced electrical switching Kévin Alhada-Lahbabi,Damien Deleruyelle,Brice Gautier npj Computational Materials, 2024, 10 (1), pp.197. ⟨10.1038/s41524-024-01375-7⟩ Article dans une revue hal-04814146v1
Transfer learning for accelerating phase-field modeling of ferroelectric domain formation in large-scale 3D systems Kévin Alhada-Lahbabi,Damien Deleruyelle,Brice Gautier Computer Methods in Applied Mechanics and Engineering, 2024, 429, pp.117167. ⟨10.1016/j.cma.2024.117167⟩ Article dans une revue hal-04814150v1
Phase‐Field Study of Nanocavity‐Assisted Mechanical Switching in PbTiO 3 Thin Films Kévin Alhada-Lahbabi,Damien Deleruyelle,Brice Gautier Advanced Electronic Materials, 2024, 10 (5), ⟨10.1002/aelm.202300744⟩ Article dans une revue hal-04814170v1
Comparative performance of fluorite-structured materials for nanosupercapacitor applications Grégoire Magagnin,Jordan Bouaziz,Martine Le Berre,Sara Gonzalez,Damien Deleruyelleet al. APL Materials, 2024, 12 (7), pp.071124. ⟨10.1063/5.0220110⟩ Article dans une revue hal-04662425v1
Oxygen vacancy effects on polarization switching of ferroelectric Bi$_2$FeCrO$_6$ thin films Xavier Henning,Kevin Alhada-Lahbabi,Damien Deleruyelle,Brice Gautier,Laurent Schluret al. Physical Review Materials, 2024, 8 (5), pp.054416. ⟨10.1103/PhysRevMaterials.8.054416⟩ Article dans une revue hal-04606219v1
Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors Greta Segantini,Benoît Manchon,Infante Ingrid C.,Matthieu Bugnet,Rabei Barhoumiet al. Advanced Electronic Materials, 2023, pp.2300171. ⟨10.1002/aelm.202300171⟩ Article dans une revue hal-04186567v1
Machine Learning Surrogate Model for Acceleration of Ferroelectric Phase-Field Modeling Kévin Alhada-Lahbabi,Damien Deleruyelle,Brice Gautier ACS Applied Electronic Materials, 2023, 5 (7), pp.3894-3907. ⟨10.1021/acsaelm.3c00601⟩ Article dans une revue hal-04814174v1
3D Logic circuit design oriented electrothermal modeling of vertical junctionless nanowire FETs Sara Mannaa,Arnaud Poittevin,Cédric Marchand,Damien Deleruyelle,Bastien Deveautouret al. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023, 9 (2), pp.116 - 123. ⟨10.1109/JXCDC.2023.3309502⟩ Article dans une revue hal-04230911v1
A Fully-Numerical Environment for Evaluating the Robustness of the Short Open Load Calibration for Capacitance Measurements in Scanning Microwave Microscopy D. Richert,K. Kaja,J. Morán-Meza,B. Gautier,D. Deleruyelleet al. Proceedings of the IEEE-MTT IEEE, 2023, pp.133-135. ⟨10.1109/NEMO56117.2023.10202380⟩ Article dans une revue hal-04579192v1
Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick Sol‐Gel‐Grown PbZr 0.2 Ti 0.8 O 3 Films Assisted by Nanocavities Sergio Gonzalez Casal,Xiaofei Bai,Kevin Alhada‐lahbabi,Bruno Canut,Bertrand Vilquinet al. Advanced Electronic Materials, 2022, pp.2200077. ⟨10.1002/aelm.202200077⟩ Article dans une revue hal-03662877v1
Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction. Benoît Manchon,Greta Segantini,Nicolas Baboux,Pedro Rojo Romeo,Rabei Barhoumiet al. physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2022, 16 (10), pp.2100585. ⟨10.1002/pssr.202100585⟩ Article dans une revue hal-03609773v1
Ferroelectricity Improvement in Ultra-Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer Greta Segantini,Rabei Barhoumi,Benoît Manchon,Ingrid Cañero Infante,Pedro Rojo Romeoet al. physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2022, 2100583, pp.2100583. ⟨10.1002/pssr.202100583⟩ Article dans une revue hal-03759538v1
Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data Lucas Reganaz,Eduardo Esmanhotto,Nazim Ait Abdelkader,Joel Minguet Lopez,Niccolo Castellaniet al. Physica Status Solidi A (applications and materials science), 2022, 219 (13), pp.2100753. ⟨10.1002/pssa.202100753⟩ Article dans une revue hal-03840622v1
Water-soluble polyethylene-oxide polymer based memristive devices Prabir Mahato,Etienne Puyoo,Sébastien Pruvost,Damien Deleruyelle Microelectronic Engineering, 2022, 260, pp.111806. ⟨10.1016/j.mee.2022.111806⟩ Article dans une revue hal-03840652v1
1S1R optimization for high‐frequency inference on binarized spiking neural networks Joel Minguet Lopez,Quentin Rafhay,Manon Dampfhoffer,Lucas Reganaz,Niccolo Castellaniet al. Advanced Electronic Materials, 2022, 2022 (8), pp.2200323. ⟨10.1002/aelm.202200323⟩ Article dans une revue cea-03707409v1
Indium oxide nanoparticles for Resistive RAM integration using a compatible industrial technology P.V. Guenery,E.A. León Pérez,K. Ayadi,N. Baboux,D. Deleruyelleet al. Solid-State Electronics, 2021, pp.107958. ⟨10.1016/j.sse.2021.107958⟩ Article dans une revue hal-03116248v1
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices Silvana Guitarra,P. Mahato,D. Deleruyelle,L. Raymond,L. Trojman Solid-State Electronics, 2021, 185, pp.108055. ⟨10.1016/j.sse.2021.108055⟩ Article dans une revue hal-03252877v1
OxRAM+OTS optimization for Binarized Neural Network hardware implementation Joel Minguet Lopez,Tifenn Hirtzlin,Manon Dampfhoffer,Laurent Grenouillet,Lucas Reganazet al. Semiconductor Science and Technology, 2021, 37 (1), pp.014001. ⟨10.1088/1361-6641/ac31e2⟩ Article dans une revue hal-03418653v1
Conductive-bridge memory cells based on a nano-porous electrodeposited GeSbTe alloy Charles Rebora,Ruomeng Huang,Gabriela P. Kissling,Marc Bocquet,C H (kees) De Grootet al. Nanotechnology, 2018, ⟨10.1088/1361-6528/aae6db⟩ Article dans une revue hal-01951256v1
Design and Simulation of a 128 kb Embedded Nonvolatile Memory Based on a Hybrid RRAM (HfO$_2$ )/28 nm FDSOI CMOS Technology Jean-Michel Portal,Marc Bocquet,Santhosh Onkaraiah,Mathieu Moreau,Hassen Azizaet al. IEEE Transactions on Nanotechnology, 2017, 16, pp.677 - 686. ⟨10.1109/TNANO.2017.2703985⟩ Article dans une revue hal-01745418v1
A multi-scale methodology connecting device physics to compact models and circuit applications for OxRAM technology Francesco Maria Puglisi,Damien Deleruyelle,Jean-Michel Portal,Paolo Pavan,Luca Larcher Physica Status Solidi A (applications and materials science), 2016, 213 (2), pp.289-301. ⟨10.1002/pssa.201532828⟩ Article dans une revue istex hal-01435201v1
Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application A. Prakash,D. Deleruyelle,J. Song,Marc Bocquet,H. Hwang Applied Physics Letters, 2015, 106 (23), pp.233104. ⟨10.1063/1.4922446⟩ Article dans une revue hal-01737306v1
Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories Weisheng Zhao,Mathieu Moreau,Erya Deng,Yue Zhang,Jean-Michel Portalet al. IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61 (2), pp.443 - 454. ⟨10.1109/TCSI.2013.2278332⟩ Article dans une revue hal-01743999v1
Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories Marc Bocquet,Damien Deleruyelle,Hassen Aziza,Christophe Muller,Jean-Michel Portalet al. IEEE Transactions on Electron Devices, 2014, 61 (3), pp.674 - 681. ⟨10.1109/TED.2013.2296793⟩ Article dans une revue hal-01737291v1
Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM) Marc Bocquet,Hassen Aziza,Weisheng Zhao,Yue Zhang,Santhosh Onkaraiahet al. Journal of Low Power Electronics and Applications, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩ Article dans une revue hal-01737320v1
An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies Jean-Michel Portal,Marc Bocquet,Mathieu Moreau,Hassen Aziza,Damien Deleruyelleet al. Journal of Electronic Science and Technology, 2014, 12 (2), pp.173 - 181. ⟨10.3969/j.issn.1674-862X.2014.02.007⟩ Article dans une revue hal-01745646v1
Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells W. Zhao,M. Portal,W. Kang,Mathieu Moreau,Y. Zhanget al. Journal of Parallel and Distributed Computing, 2014, 74 (6), pp.2484 - 2496. ⟨10.1016/j.jpdc.2013.08.004⟩ Article dans une revue hal-01744000v1
Photo-Cross-Linked Diblock Copolymer Micelles: Quantitative Study of Photochemical Efficiency, Micelles Morphologies and their Thermal Behavior Dao Le,Livie Liénafa,Trang N. T. Phan,Damien Deleruyelle,Renaud Bouchetet al. Macromolecules, 2014, 47 (7), pp.2420--2429. ⟨10.1021/ma5000656⟩ Article dans une revue hal-01460517v1
Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up H. Hraziia,Adam Makosiej,Giorgio Palma,Jean-Michel Portal,Marc Bocquetet al. Solid-State Electronics, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩ Article dans une revue hal-01744003v1
Switching of nanosized filaments in NiO by conductive atomic force microscopy F. Nardi,Damien Deleruyelle,S. Spiga,C. Muller,B. Bouteilleet al. Journal of Applied Physics, 2012, 112 (6), ⟨10.1063/1.4752032⟩ Article dans une revue hal-05006769v1
Non-Volatile Flip-Flop Based on Unipolar ReRAM for Power-Down Applications Jean-Michel Portal,Marc Bocquet,Damien Deleruyelle,Christophe Muller Journal of Low Power Electronics, 2012, 8 (1), pp.1 - 10. ⟨10.1166/jolpe.2012.1172⟩ Article dans une revue hal-01745507v1
Low-power resistive switching in Au/NiO/Au nanowire arrays S. Brivio,G. Tallarida,D. Perego,S. Franz,Damien Deleruyelleet al. Applied Physics Letters, 2012, 101 (22), ⟨10.1063/1.4769044⟩ Article dans une revue hal-05006771v1
Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate D. Deleruyelle,Magali Putero,T. Ouled-Khachroum,Marc Bocquet,M.V. Couletet al. Solid-State Electronics, 2012, ⟨10.1016/j.sse.2012.06.010⟩ Article dans une revue emse-00767177v1
Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories Marc Bocquet,Damien Deleruyelle,Christophe Muller,Jean-Michel Portal Applied Physics Letters, 2011, 98 (26), ⟨10.1063/1.3605591⟩ Article dans une revue hal-01779321v1
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes Carine Dumas,Damien Deleruyelle,A. Demolliens,Ch. Muller,S. Spigaet al. Thin Solid Films, 2011, 519 (11), pp.3798-3803. ⟨10.1016/j.tsf.2010.12.244⟩ Article dans une revue istex hal-05006756v1
Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer Ch. Muller,D. Deleruyelle,R. Müller,M. Thomas,A. Demollienset al. Solid-State Electronics, 2011, 56 (1), pp.168-174. ⟨10.1016/j.sse.2010.10.006⟩ Article dans une revue istex hal-02266382v1
Evidence for correlated structural and electrical changes in a Ge2Sb2Te5 thin film from combined synchrotron X-ray techniques and sheet resistance measurements during in situ thermal annealing Magali Putero,Toufik Ouled-Khachroum,Marie-Vanessa Coulet,Damien Deleruyelle,Eric Ziegleret al. Journal of Applied Crystallography, 2011, 44, pp.858-864. ⟨10.1107/S0021889811024095⟩ Article dans une revue istex hal-01951268v1
Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy Damien Deleruyelle,Carine Dumas,Marion Carmona,Christophe Muller,Sabina Spigaet al. Applied Physics Express, 2011, 4 (5), pp.051101. ⟨10.1143/APEX.4.051101⟩ Article dans une revue hal-05006762v1
Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatile Memories J. Amouroux,V. Della Marca,E. Petit,D. Deleruyelle,Magali Puteroet al. MRS Online Proceedings Library, 2011, 1337, ⟨10.1557/opl.2011.975⟩ Article dans une revue hal-01760606v1
Accurate analysis of parasitic current overshoot during forming operation in RRAMs S. Tirano,L. Perniola,J. Buckley,J. Cluzel,V. Jousseaumeet al. Microelectronic Engineering, 2011, 88 (7), pp.1129-1132. ⟨10.1016/j.mee.2011.03.062⟩ Article dans une revue hal-05006764v1
Study of Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Thin Films Deposited by Sol-Gel Method A. Demolliens,R. Müller,L. Goux,D. Deleruyelle,D. Wouterset al. Ferroelectrics, 2010, 397 (1), pp.112-121. ⟨10.1080/00150193.2010.484748⟩ Article dans une revue hal-02271962v1
Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures A. Demolliens,Ch. Muller,R. Müller,C. Turquat,L. Gouxet al. Journal of Crystal Growth, 2010, 312 (22), pp.3267-3275. ⟨10.1016/j.jcrysgro.2010.08.008⟩ Article dans une revue istex hal-02271976v1
Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories Damien Deleruyelle,Christophe Muller,Julien Amouroux,Robert Müller Applied Physics Letters, 2010, 96 (26), ⟨10.1063/1.3458596⟩ Article dans une revue hal-05006752v1
A Dual-Gate Memory Cell with Two Inter-Poly Oxides Jean-René Raguet,Patrick Calenzo,Romain Laffont,Damien Deleruyelle,Rachid Bouchakouret al. Japanese Journal of Applied Physics, 2009, 48 (4S), pp.04C058. ⟨10.1143/JJAP.48.04C058⟩ Article dans une revue hal-05006735v1
On the electrostatic behavior of floating nanoconductors Damien Deleruyelle,G. Micolau Solid-State Electronics, 2008, 52 (1), pp.17-24. ⟨10.1016/j.sse.2007.07.008⟩ Article dans une revue hal-05006726v1
Degradation of floating-gate memory reliability by few electron phenomena G. Molas,Damien Deleruyelle,B. De Salvo,G. Ghibaudo,M. Gelygelyet al. IEEE Transactions on Electron Devices, 2006, 53 (10), pp.2610-2619. ⟨10.1109/TED.2006.882284⟩ Article dans une revue hal-05006725v1
Degradation of floating gate memory reliability by few electron phenomena G. Molas,D. Deleruyelle,B. Desalvo,Gérard Ghibaudo,M. Gelyet al. IEEE Transactions on Electron Devices, 2006, 53, pp.2610 Article dans une revue hal-00145101v1
Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics J. Buckley,B. De Salvo,Damien Deleruyelle,M. Gely,G. Nicotraet al. Microelectronic Engineering, 2005, 80, pp.210-213. ⟨10.1016/j.mee.2005.04.070⟩ Article dans une revue hal-05006724v1
Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics Damien Deleruyelle,G. Molas,B. Desalvo,M. Gely,D. Lafond Solid-State Electronics, 2005, 49 (11), pp.1728-1733. ⟨10.1016/j.sse.2005.10.023⟩ Article dans une revue istex hal-05006722v1
A new memory concept: the nano-multiple-tunnel-junction memory with embedded Si nano-crystals Damien Deleruyelle,C Le Royer,B Desalvo,G Le Carval,M Gelyet al. Microelectronic Engineering, 2004, 72 (1-4), pp.399-404. ⟨10.1016/j.mee.2004.01.027⟩ Article dans une revue istex hal-05006721v1
Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory Damien Deleruyelle,J. Cluzel,B. De Salvo,D. Fraboulet,D. Mariolleet al. Solid-State Electronics, 2003, 47 (10), pp.1641-1644. ⟨10.1016/S0038-1101(03)00171-0⟩ Article dans une revue hal-05006706v1

Communication dans un congrès (78)

(Anti)Ferroelectric HfZrO2: from non volatile memory to energy storage applications Bertrand Vilquin,Grégoire Magagnin,Jordan Bouaziz,Martine Le Berre,S. Gonzalezet al. DPG Spring Meeting Dresden 2026, German Physical Society (DPG), Mar 2026, Dresden, Germany Communication dans un congrès hal-05546041v1
Enhancing Polarization and Reliability in HZO-Based FTJs Using WOx Electrodes and Interfacial Layers Anjana Thomas,Alexandre Boyer,Akash Mhase,Bertrand Vilquin,Jordan Bouazizet al. South Asia Ferroelectric Symposium (SAFS), IEEE UFFC, Aug 2025, Bengaluru (Bangalore), India Communication dans un congrès hal-05279432v1
Antiferroelectric fluorite-based capacitors for ultra-high energy storage density applications Grégoire Magagnin,Jordan Bouaziz,Martine Le Berre,S. Gonzalez,Damien Deleruyelleet al. International Symposium on Applications of Ferroelectrics (ISAF), IEEE UFFC, Jul 2025, Graz, Austria Communication dans un congrès hal-05279345v1
Machine learning for advanced ferroelectric materials: theory and experiment Kevin Alhada-Lahbabi,Damien Deleruyelle,Brice Gautier European Meeting on Ferroelectricity, Aug 2025, Katowice, Poland Communication dans un congrès hal-05265712v1
PEALD of Antiferroelectric Fluorite for High Energy Storage Applications Grégoire Magagnin,Martine Le Berre,S. Gonzalez,Damien Deleruyelle,Jordan Bouazizet al. RAFALD 2025, GDR RAFALD, Nov 2025, Grenoble, France Communication dans un congrès hal-05379988v1
Nanostructuration and Interfacial Effects on the Properties of Ferroelectric HfZrO2 Thin Films Greta Segantini,Benoît Manchon,Jordan Bouaziz,Grégoire Magagnin,Martine Le Berreet al. The 14th Joint Asian Meeting on Ferroelectrics and Electroceramics (AMF-AMEC-14) - ICMAT 2025, MRS-Singapore, Jun 2025, Singapour, Singapore Communication dans un congrès hal-05158924v1
Antiferroelectric PUND measurements on ZrO2 Grégoire Magagnin,Martine Le Berre,S. Gonzalez,Damien Deleruyelle,Bertrand Vilquinet al. High k Workshop 2025, NamLab, Mar 2025, Dresden, Germany Communication dans un congrès hal-05043052v1
Antiferroelectric fluorite-based capacitors for ultra-high energy storage density applications Grégoire Magagnin,Jordan Bouaziz,Martine Le Berre,S. Gonzalez,Infante Ingrid C.et al. C'NANO 2025, Centre national de Compétences en Nanosciences du CNRS, Mar 2025, Paris, France Communication dans un congrès hal-05043660v1
Novel Electrical Characterization Method for Antiferroelectric like ZrO2 using a Positive Up Negative Down Approach Grégoire Magagnin,Alexandre Boyer,Martine Le Berre,S. Gonzalez,Damien Deleruyelleet al. International Symposium on Applications of Ferroelectrics (ISAF), IEEE UFFC, Jul 2025, Graz, Austria Communication dans un congrès hal-05279312v1
State-of-the-Art Research on Hf-ZrO2 Ferroelectric and Antiferroelectric Capacitors Jordan Bouaziz,Grégoire Magagnin,Alexandre Boyer,Martine Le Berre,S. Gonzalezet al. South Asia Ferroelectric Symposium (SAFS), IEEE UFFC, Aug 2025, Bengaluru (Bangalore), India Communication dans un congrès hal-05279394v1
Serendipity in materials science: how a simple doping leads to novel and outstanding properties in simple dielectric HfO2 ! Bertrand Vilquin,Damien Deleruyelle ELyT Workshop 2024, Mar 2024, Sendai, Japan Communication dans un congrès hal-04755446v1
3D VNWFET-Based Standard Cell Library Design Flow: from Circuit and Physical Design to Logic Synthesis Sara Mannaa,Cédric Marchand,Damien Deleruyelle,Bastien Deveautour,Alberto Bosioet al. 2024 IFIP/IEEE 32nd International Conference on Very Large Scale Integration (VLSI-SoC), Oct 2024, Tanger, France. pp.1-4, ⟨10.1109/VLSI-SoC62099.2024.10767812⟩ Communication dans un congrès hal-04982742v1
Hf(1-x)Z(x)O2 monolayers for nanosupercapacitors: a performance assessment study Grégoire Magagnin,Jordan Bouaziz,Martine Le Berre,Sara Gonzalez,Etienne Puyooet al. XXXIX RSEF Physics Biennial, Real Sociedad Española de Física, Jul 2024, San Sebastian, Spain Communication dans un congrès hal-04750245v1
Development of ferroelectric and antiferroelectric H1-xZrxO2-based capacitors for non-volatile memories and power supply applications Jordan Bouaziz,Grégoire Magagnin,S. Gonzalez,Martine Le Berre,Damien Deleruyelleet al. JNTE (Journées Nationales sur les Technologies Emergentes en micro-nanofabrication) 2024, Telecom Saint-Etienne; Laboratoire Hubert Currien, Nov 2024, Saint-Etienne (FR), France Communication dans un congrès hal-04810963v1
PE-ALD antiferroelectric fluorite for high energy storage nanosupercapacitors Grégoire Magagnin,Jordan Bouaziz,Martine Le Berre,S. Gonzalez,Damien Deleruyelleet al. 10ème Workshop du Réseau des Acteurs Français de l'ALD, GDR RAFALD, Nov 2024, Nantes (France), France Communication dans un congrès hal-04810885v1
FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation Ian O'Connor,Sara Mannaa,Alberto Bosio,Bastien Deveautour,Damien Deleruyelleet al. 2024 Design, Automation & Test in Europe Conference & Exhibition (DATE), Mar 2024, Valencia, Spain. pp.1-6, ⟨10.23919/DATE58400.2024.10546700⟩ Communication dans un congrès hal-04739538v1
VNWFET-Based Systolic Array Accelerator for Deep Neural Networks Sara Mannaa,Paul-Antoine Matrangolo,Cédric Marchand,Damien Deleruyelle,Bastien Deveautouret al. 2024 IEEE 24th International Conference on Nanotechnology (NANO), Jul 2024, Gijon, Spain. pp.620-625, ⟨10.1109/NANO61778.2024.10628674⟩ Communication dans un congrès hal-04985211v1
Stabilization of low dimensional ferroelectric HfZrO2 film Greta Segantini,Benoît Manchon,Jordan Bouaziz,Damien Deleruyelle,Infante Ingrid C.et al. International Workshop on Emergent Phenomena in Low-Dimensional Ferroelectric Structures, Helmholtz-Zentrum Berlin, Jun 2024, Berlin, Germany Communication dans un congrès hal-04749755v1
High energy storage antiferroelectric fluorite nanosupercapacitors Grégoire Magagnin,Jordan Bouaziz,Martine Le Berre,Sara Gonzalez,Etienne Puyooet al. CMD31, European Physical Society; CMD-General Conference of the Condensed Matter Division, Sep 2024, Braga, Portugal Communication dans un congrès hal-04749716v1
1S1R sub-threshold operation in Crossbar Arrays for Neural Networks hardware implementation Joel Minguet Lopez,Manon Dampfhoffer,Tifenn Hirtzlin,Lucas Reganaz,Laurent Grenouilletet al. MIXDES 2023, Jun 2023, CRACOVIE, Poland. ⟨10.23919/MIXDES58562.2023.10203226⟩ Communication dans un congrès cea-04161135v1
Interface engineering between HfZrO2 thin films and electrodes for enhanced ferroelectricity Greta Segantini,Rabei Barhoumi,Benoît Manchon,Ingrid Canero Infante,Mathieu Bugnetet al. 15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel Communication dans un congrès hal-04055083v1
How ALD deposition analysis can help PVD deposition process! Bertrand Vilquin,Damien Deleruyelle,Jordan Bouaziz,Martine Le Berre,Céline Chevalieret al. 9ème Workshop RAFALD, GDR RAFALD, Nov 2023, Lille (France), France Communication dans un congrès hal-04308002v1
Study of Imprint Dynamics in HZO Ferroelectric Capacitors Benoît Manchon,Greta Segantini,Pedro Rojo Romeo,Ingrid Canero Infante,Dominique Drouinet al. International Symposium on Applications of Ferroelectrics 2023, IEEE; UFFC, Jul 2023, Cleveland, United States Communication dans un congrès hal-04190736v1
VNWFET-Based Technology: From Device Modelling to Standard Cell Library Sara Mannaa,Cédric Marchand,Damien Deleruyelle,Bastien Deveautour,Ian O'Connoret al. 2023 IEEE 23rd International Conference on Nanotechnology (NANO), Jul 2023, Jeju City, France. pp.576-581, ⟨10.1109/NANO58406.2023.10231288⟩ Communication dans un congrès hal-04651775v1
Elaboration and imprint consideration in HfZrO2 ferroelectric capacitors Jordan Bouaziz,Greta Segantini,Benoît Manchon,Ingrid Cañero Infante,Nicolas Babouxet al. High k Workshop 2023, NamLab, May 2023, Dresden, Germany Communication dans un congrès hal-04136940v1
Engineering the nano and micro structures of sputtered HfZrO2 thin films Jordan Bouaziz,Greta Segantini,Benoît Manchon,Rabei Barhoumi,Ingrid Cañero Infanteet al. 15th International Meeting on Ferroelectricity - IMF 2023, Mar 2023, Tel Aviv, Israel Communication dans un congrès hal-04053582v1
Interfaces engineering to enhance ferroelectricity in ultra-thin HZO CMOS compatible FTJ Greta Segantini,Benoît Manchon,Infante Ingrid C.,Matthieu Bugnet,Pedro Rojo Romeoet al. EMRS 2023 Fall Meeting, European Materials Research Society, Sep 2023, Warsaw (Poland), Poland Communication dans un congrès hal-04216334v1
Study of Imprint dynamics in CMOS compatible HZO ferroelectric capacitors Benoît Manchon,Greta Segantini,Pedro Rojo Romeo,Dominique Drouin,Damien Deleruyelleet al. EMRS 2023 Fall Meeting, European Materials Research Society (E-MRS), Sep 2023, Warsaw, Poland Communication dans un congrès hal-04213060v1
Energy-efficient Computation-In-Memory Architecture using Emerging Technologies Rajendra Bishnoi,Sumit Diware,Anteneh Gebregiorgis,Simon Thomann,Sara Mannaaet al. 2023 International Conference on Microelectronics (ICM 2023), Dec 2023, Abu Dhabi, United Arab Emirates. pp.325-334, ⟨10.1109/ICM60448.2023.10378889⟩ Communication dans un congrès hal-04982731v1
Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel Junctions Greta Segantini,Benoît Manchon,Infante Ingrid C.,Matthieu Bugnet,Rabei Barhoumiet al. ISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States Communication dans un congrès hal-04195857v1
Influence of the electrode interface on the properties of ferroelectric HfZrO2 Jordan Bouaziz,Greta Segantini,Benoît Manchon,Rabei Barhoumi,Ingrid Cañero Infanteet al. High k Workshop 2022, NamLab, Sep 2022, Dresden, Germany Communication dans un congrès hal-03775873v1
Comparative Study of sub-8 nm HZO-Based Ferroelectric Tunnel Junctions with Enhanced Ferroelectricity Greta Segantini,Benoit Manchon,Rabei Barhoumi,Pedro Rojo Romeo,Ingrid Cañero Infanteet al. ISAF-PFM-ECAPD 2022, Jun 2022, Tours, France Communication dans un congrès hal-03715029v1
A multiscale study of the structure, chemistry and ferroelectric properties of epitaxial sol-gel PbZr0.2Ti0.8O3 films for nanomechanical switching Ingrid C. Infante,Sergio Gonzalez Casal,Xiaofei Bai,Kevin Alhada‐lahbabi,Sara Gonzalezet al. ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France Communication dans un congrès hal-03719104v1
1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing J. Minguet Lopez,F. Rummens,L. Reganaz,A. Heraud,T. Hirtzlinet al. IMW 2022 - IEEE International Memory Workshop, May 2022, Dresden, Germany. pp.1-4, ⟨10.1109/IMW52921.2022.9779253⟩ Communication dans un congrès cea-03707392v1
High temperature stability embedded ReRAM for 2x nm node and beyond G. Molas,G. Piccolboni,A. Bricalli,A. Verdy,I. Naotet al. 2022 IEEE International Memory Workshop (IMW), May 2022, Dresden, France. pp.1-4, ⟨10.1109/IMW52921.2022.9779293⟩ Communication dans un congrès hal-03840618v1
Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 K Benoit Manchon,Dorian Coffineau,Greta Segantini,Nicolas Baboux,Pedro Rojo Romeoet al. ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France Communication dans un congrès hal-03719069v1
Wake-Up Effect and Retention Evolutions of Hf0.5Zr0.5O2 Capacitor by Nanostructuration Engineering Jordan Bouaziz,Greta Segantini,Benoit Manchon,Rabei Barhoumi,Infante Ingrid C.et al. ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France Communication dans un congrès hal-03715010v1
How to play on the fabrication process of HfZrO2 ferroelectric thin film to enhance its physical properties Jordan Bouaziz,Greta Segantini,Benoit Manchon,Rabei Barhoumi,Ingrid Cañero Infanteet al. EMRS 2022 Spring Meeting - Symposium N: Synthesis, processing and characterization of nanoscale multi functional oxide films VIII and 6th E-MRS & MRS-J bilateral symposium, European Materials Research Society, May 2022, Strasbourg, France Communication dans un congrès hal-03682220v1
Fabrication process for sub-8 nm HfZrO2-based ferroelectric tunnel junctions with enhanced properties Greta Segantini,Benoit Manchon,Rabei Barhoumi,Pedro Rojo Romeo,Ingrid Cañero Infanteet al. EMRS 2022 Spring Meeting - Symposium E : Adaptive materials and devices for brain-inspired electronics, European Materials Research Society, May 2022, Strasbourg, France Communication dans un congrès hal-03690321v1
Role of ultra-thin Ti and Al interfacial layers in HfZrO2 ferroelectric tunnel junctions Greta Segantini,Benoit Manchon,Pedro Rojo Romeo,Rabei Barhoumi,Nicolas Babouxet al. EMRS 2021 Fall Meeting, European Materials Research Society, Sep 2021, Warsaw, Poland Communication dans un congrès hal-03368741v1
Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization J Minguet Lopez,L. Hudeley,L. Grenouillet,D Alfaro Robayo,J. Sandriniet al. 2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩ Communication dans un congrès hal-03333678v1
Why neuromorphic computing need novel 3D technologies? A view from FVLLMONTI European project consortium (Invited) Cristell Maneux,Mukherjee Chhandak,Marina Deng,Maeva Dubourg,Lucas Réveilet al. High Performance Embedded Architecture and Compilation, Computing Systems Week, (HiPEAC CSW) Autumn 2021, Oct 2021, Lyon, France Communication dans un congrès hal-03408071v1
Electrical Characterisation of HfZrO2 Ferroelectric Tunnel Junctions for Neuromorphic Application Benoit Manchon,Greta Segantini,Pedro Rojo Romeo,Nicolas Baboux,Rabei Barhoumiet al. EMRS 2021 Fall Meeting, Sep 2021, Online, Canada Communication dans un congrès hal-03354311v1
Impact of a dielectric layer at TiN/HfZrO2 interface for ferroelectric tunnel junctions applications Greta Segantini,Pedro Rojo Romeo,Benoit Manchon,Rabei Barhoumi,Damien Deleruyelleet al. Journées de la matière condensée (JMC17), Société française de physique (SFP), Aug 2021, Rennes, France Communication dans un congrès hal-03372588v1
Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1S1R crossbar arrays J. Minguet Lopez,N. Castellani,L. Grenouillet,L. Reganaz,G. Navarroet al. 2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩ Communication dans un congrès hal-03622145v1
Effect of bottom electrodes on HZO thin film properties Bertrand Vilquin,Greta Segantini,Benoit Manchon,Ingrid Cañero Infante,Pedro Rojo Romeoet al. International Symposium on Applications of Ferroelectrics (ISAF) 2021, https://isaf-isif-pfm2021.org/, May 2021, Sydney, Australia Communication dans un congrès hal-03274229v1
Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence (Invited) Cristell Maneux,Mukherjee Chhandak,Marina Deng,Maeva Dubourg,Lucas Réveilet al. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), Dec 2021, San Fransisco, United States. ⟨10.1109/IEDM19574.2021.9720572⟩ Communication dans un congrès hal-03408078v1
Optimization of RRAM and OTS selector for advanced low voltage CMOS compatibility J. Minguet Lopez,D. Alfaro Robayo,L. Grenouillet,C. Carabasse,G. Navarroet al. 2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩ Communication dans un congrès hal-03029496v1
Crosspoint Memory Arrays: Principle, Strengths and Challenges G. Molas,D. Alfaro Robayo,J. Minguet Lopez,L. Grenouillet,C. Carabasseet al. 2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108143⟩ Communication dans un congrès hal-03029495v1
Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration D. Alfaro Robayo,D. Deleruyelle,E. Vianello,N. Castellani,L. Ciampoliniet al. 2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩ Communication dans un congrès hal-03029486v1
CBRAM devices with a water casted solid polymer electrolyte for flexible electronic applications Prabir Mahato,Etienne Puyoo,Damien Deleruyelle,Sébastien Pruvost 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Oct 2019, Stockholm, France. pp.1-5, ⟨10.1109/NMDC47361.2019.9083996⟩ Communication dans un congrès hal-03029533v1
Optimization of resistive memories using In2O3 nanostructures integration with a CMOS Back-End-Off-Line process Abdelkader Souifi,Pierre-Vincent Guenery,D. Deleruyelle,Liviu Militaru,J. Moeyaertet al. Annual Conference on Nanotechnology and Advanced Materials, Nov 2019, San Francisco, United States Communication dans un congrès hal-03029510v1
Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL P.-V. Guenery,E. Leon Perez,K. Ayadi,J. Moeyaert,S. Labauet al. 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Jul 2018, Cork, Ireland. pp.1-2, ⟨10.1109/NANO.2018.8626323⟩ Communication dans un congrès hal-02330674v1
Conductive Bridge Random Access Memory devices with Ecofriendly Solid Polymer Electrolyte for flexible electronics applications Prabir Mahato,Etienne Puyoo,Sébastien Pruvost,Damien Deleruyelle 11th International Symposium on Organic Flexible Electronics (ISFOE), Jul 2018, Thessaloniki, Greece Communication dans un congrès hal-03029545v1
Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology Jean-Jacques Fagot,Philippe Boivin,V. Della Marca,Jeremie Postel-Pellerin,Damien Deleruyelleet al. IEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩ Communication dans un congrès hal-01900758v1
Conductive Bridge Random Access Memory Devices Based on an Ecofriendly Solid Polymer Electrolyte Prabir Mahato,Etienne Puyoo,Sébastien Pruvost,D. Deleruyelle 8th Advanced Functional Materials and Devices, Aug 2018, Leuven, Belgium Communication dans un congrès hal-03029542v1
Impact of a Laser Pulse On HfO$_2$-based RRAM Cells Reliability and Integrity A. Krakovinsky,Marc Bocquet,R. Wacquez,J. Coignus,D. Deleruyelleet al. 2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2016, Unknown, Unknown Region. pp.152-156 Communication dans un congrès hal-01435097v1
Impact of a laser pulse on HfO2-based RRAM cells reliability and integrity A. Krakovinsky,M. Bocquet,R. Wacquez,J. Coignus,Damien Deleruyelleet al. 2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, France. pp.152-156, ⟨10.1109/ICMTS.2016.7476196⟩ Communication dans un congrès hal-05006802v1
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications G. Piccolboni,G. Molas,M. Portal,R. Coquand,Marc Bocquetet al. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩ Communication dans un congrès hal-01804658v1
(Invited) Temperature Impact on Reliablity and Manufacturing of Embedded HfOx-Based RRAM: a Novel Pre-coding Method for Bypassing Soldering Reflow Sauveur Tirano,Luca Perniola,Carlo Cagli,Eric Jalaguier,Vincent Jousseaumeet al. ECS Meetings, May 2014, Orlando (Florida), United States. pp.311-313, ⟨10.1149/06102.0311ecst⟩ Communication dans un congrès hal-05006795v1
Fabrication and characterization of ECM memories based on a Ge2Sb2Te5 solid electrolyte Charles Rebora,Marc Bocquet,T. Ouled-Khachroum,Magali Putero,Damien Deleruyelle 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872754⟩ Communication dans un congrès hal-01804660v1
Analytical study of complementary memristive synchronous logic gates Jean-Michel Portal,Mathieu Moreau,Marc Bocquet,Hassen Aziza,Damien Deleruyelleet al. 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, United States. ⟨10.1109/NanoArch.2013.6623047⟩ Communication dans un congrès hal-01745759v1
Analytical study of complementary memristive synchronous logic gates Jean-Michel Portal,M. Moreau,Marc Bocquet,Hassen Aziza,D. Deleruyelleet al. 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), Jul 2013, Brooklyn, France. ⟨10.1109/NanoArch.2013.6623047⟩ Communication dans un congrès hal-01827052v1
Synchronous Full-Adder based on Complementary Resistive Switching Memory Cells Y Zhang,Erya y Deng,Jacques-Olivier O Klein,Damien Querlioz,Dafiné Ravelosonaet al. 11th International New Circuits and Systems Conference (NEWCAS), Jun 2013, Paris, France. ⟨10.1109/NEWCAS.2013.6573578⟩ Communication dans un congrès hal-01840795v1
Compact modeling solutions for OxRAM memories Marc Bocquet,Damien Deleruyelle,Hassen Aziza,Christophe Muller,Jean-Michel Portal 2013 IEEE Faible Tension Faible Consommation (FTFC), Jun 2013, Paris, France. pp.1-4, ⟨10.1109/FTFC.2013.6577779⟩ Communication dans un congrès hal-05006780v1
Crossbar architecture based on 2R complementary resistive switching memory cell Weisheng Zhao,Y Zhang,Jacques-Olivier Klein,Damien S Querlioz,Dafine Ravelosonaet al. 2012 IEEE/ACM International Symposium on Nanoscale Architectures , Jul 2012, Amsterdam, Netherlands. ⟨10.1145/2765491.2765508⟩ Communication dans un congrès hal-01745351v1
On the electrical variability of resistive-switching memory devices based on NiO oxide S Tirano,Marc Bocquet,Christophe Muller,D. Deleruyelle,L. Perniolaet al. 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States Communication dans un congrès hal-01745633v1
Design challenges for prototypical and emerging memory concepts relying on resistance switching Christophe Muller,D. Deleruyelle,O. Ginez,Jean-Michel Portal,Marc Bocquet 2011 IEEE Custom Integrated Circuits Conference (CICC 2011), Sep 2011, San Jose, CA, United States. ⟨10.1109/CICC.2011.6055316⟩ Communication dans un congrès hal-01745644v1
Interface Study of SiO 2 / HfO 2 /SiO 2 Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories Alexandre Guiraud,Nicolas Breil,Mickaël Gros-Jean,Damien Deleruyelle,Gilles Micolauet al. MRS Online Proceedings Library, Apr 2010, San Francisco, United States. pp.1252-I07-08, ⟨10.1557/proc-1252-i07-08⟩ Communication dans un congrès hal-05006750v1
Experimental and theoretical study of electrode effects in HfO2 based RRAM C. Cagli,J. Buckley,V. Jousseaume,T. Cabout,A. Salaunet al. 2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, France. pp.28.7.1-28.7.4, ⟨10.1109/IEDM.2011.6131634⟩ Communication dans un congrès hal-05006759v1
Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode A. Demolliens,Ch. Muller,Damien Deleruyelle,S. Spiga,E. Cianciet al. 2009 IEEE International Memory Workshop (IMW), May 2009, Monterey, France. pp.1-3, ⟨10.1109/IMW.2009.5090606⟩ Communication dans un congrès hal-05006734v1
From micrometric to nanometric scale switching of CuTCNQ-based non-volatile memory structures M. Thomas,A. Demolliens,Ch. Turquat,Damien Deleruyelle,Ch. Mulleret al. 2008 9th Annual Non-Volatile Memory Technology Symposium, Nov 2008, Pacific Grove, France. pp.1-4, ⟨10.1109/NVMT.2008.4731190⟩ Communication dans un congrès hal-05006732v1
Investigation of a new three bits cell concept J.R. Raguet,P. Calenzo,Damien Deleruyelle,R. Laffont,A. Guiraudet al. 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS), Nov 2008, Pacific Grove, France. pp.1-5, ⟨10.1109/NVMT.2008.4731202⟩ Communication dans un congrès hal-05006727v1
Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer L. Courtade,C. Turquat,J.G. Lisoni,L. Goux,D.J. Wouterset al. ESSDERC 2008 - 38th European Solid-State Device Research Conference, Sep 2008, Edinburgh, United Kingdom. pp.218-221 Communication dans un congrès hal-02271988v1
Impact of few electron phenomena on floating-gate memory reliability G. Molas,Damien Deleruyelle,B. De Salvo,G. Ghibaudo,M. Gelyet al. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., Mar 2004, San Francisco, France. pp.877-880, ⟨10.1109/IEDM.2004.1419320⟩ Communication dans un congrès hal-05006712v1
A new memory concept: the Nano-Multiple-Tunnel-Junction memory with embedded Si nano-crystals D. Deleruyelle,C. Leroyer,B. de Salvo,G. Lecarval,M. Gelyet al. Silicon Nanoelectronics Workshop, 2002, Honolulu, United States. pp.Volume 72, Issues 1-4, Pages 399-404 Communication dans un congrès hal-00485182v1
Effect of high-k materials in the control dielectric stack of nanocrystal memories E. Spitale,D. Corso,I. Crupi,G. Nicotra,S. Lombardoet al. Proceedings of the 34th European Solid-State Device Research Conference, Sep 2004, Leuven, France. pp.161-164, ⟨10.1109/ESSDER.2004.1356514⟩ Communication dans un congrès hal-05006717v1
Electrical characterization of memory cell structures using multiple tunnels junctions with embedded Si nanocrystals D. Deleruyelle,D. Fraboulet,B. de Salvo,N. Buffet,D. Mariolleet al. Silicon Nano-electronics Workshop 2002, 2002, Honolulu, United States Communication dans un congrès hal-00484534v1

Poster de conférence (5)

Antiferroelectric Fluorite for High Energy Storage Applications Grégoire Magagnin,Martine Le Berre,S. Gonzalez,Damien Deleruyelle,Jordan Bouazizet al. High k Workshop 2025, Mar 2025, Dresden, Germany. Poster de conférence hal-05043053v1
Antiferroelectric Fluorite for High Energy Storage Applications Grégoire Magagnin,Martine Le Berre,S. Gonzalez,D. Deleruyelle,Jordan Bouazizet al. France-Japan Forum 2025 (JSPS–JST) Energy Transition and Materials, Nov 2025, Villeurbanne, France. Poster de conférence hal-05380039v1
Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability Lucas Reganaz,Damien Deleruyelle,Quentin Rafhay,Joel Minguet Lopez,Niccolo Castellaniet al. IRPS 2023 (IEEE International Reliability Physics Symposium), Mar 2023, Monterey, Californie, United States. 2023, ⟨10.1109/IRPS48203.2023.10117882⟩ Poster de conférence cea-04169237v1
Influence of bottom electrodes on HZO thin film features Pedro Rojo Romeo,Infante Ingrid C.,Greta Segantini,Pedro Rojo Romeo,Benoit Manchonet al. Material Challenge for Memory Applications 2021, Apr 2021, New York, United States Poster de conférence hal-03274227v1
Bottom electrodes impact on Hf0.5Zr0.5O2 ferroelectric tunnel junctions Greta Segantini,Pedro Rojo Romeo,Benoit Manchon,Nicolas Baboux,Ingrid C Infanteet al. EMRS Spring Meeting 2021, May 2021, Virtual, France. Poster de conférence hal-03275569v1

Chapitre d'ouvrage (2)

Emerging Memory Concepts Christophe Muller,Damien Deleruyelle,Olivier Ginez Design Technology for Heterogeneous Embedded Systems, Springer Netherlands, pp.339-364, 2012, ⟨10.1007/978-94-007-1125-9_16⟩ Chapitre d'ouvrage istex hal-03505264v1
A single Nano-Dot Embedded in a Plate Capacitor Damien Deleruyelle,Gilles Micolau Sattler, Klaus D. Handbook of Nanophysics - Nanoelectronics and Nanophotonics, CRC Press, 2010, 978-1-4200-7550-2 Chapitre d'ouvrage hal-03505265v1

Autre publication scientifique (1)

Granularity Exploration for Logic in Memory Ian O'Connor,Mayeul Cantan,Luca Mozzone,Cédric Marchand,Alberto Bosioet al. 2020 Autre publication scientifique hal-02732764v1

Pré-publication, Document de travail (1)

Novel Electrical Characterization Method for Antiferroelectrics using a Positive Up Negative Down Approach Grégoire Magagnin,Martine Le Berre,Sara Gonzalez,Damien Deleruyelle,Bertrand Vilquinet al. 2025 Pré-publication, Document de travail (preprint/prepublication) hal-04883776v1