Didier Chaussende

Identifiants chercheurs

IdHAL :

didier-chaussende

ORCID :

0000-0002-4180-8749

IdRef :

069663831

Présentation

Publications

Article dans une revue (106)

Electromagnetic levitation of liquid metal droplets under a horizontal DC magnetic field R Pons,A El Bakali,D Chaussende,P Chometon,O Budenkova Journal of Physics D: Applied Physics, 2026, 59 (1), pp.015309. ⟨10.1088/1361-6463/ae27db⟩ Article dans une revue hal-05489603v1
Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization Michail Gavalas,Yann Gallou,Didier Chaussende,Elisabeth Blanquet,Frédéric Mercieret al. Micromachines, 2025, 16 (3), pp.276. ⟨10.3390/mi16030276⟩ Article dans une revue hal-05396550v1
Toward the Identification of Point Defects Formation and Solution Growth Mechanisms of Herbertsmithite Zn&lt;sub&gt;x&lt;/sub&gt;Cu&lt;sub&gt;4-x&lt;/sub&gt;(OH)&lt;sub&gt;6&lt;/sub&gt;Cl&lt;sub&gt;2&lt;/sub&gt; Crystals Vijaya Shanthi Paul Raj,Alexandra Peña-Revellez,Jean-Sébastien Micha,Ravi Raj Purohit Purushottam Raj Purohit,Didier Chaussendeet al. Crystal Growth & Design, 2025, 25 (9), pp.2857-2873. ⟨10.1021/acs.cgd.4c01483⟩ Article dans une revue hal-05061747v1
Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications Didier Chaussende,Vincent Tabouret,Alexandre Crisci,Magali Morais,Stéphane Coindeauet al. Materials Science in Semiconductor Processing, 2024, 182, ⟨10.1016/j.mssp.2024.108673⟩ Article dans une revue hal-04724617v1
Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-ray-photoelectron spectroscopy Jeremy Vives,Stephane Verdier,Fabien Deprat,Marvin Frauenrath,Romain Duruet al. Journal of Materials Chemistry C, 2023, 11 (26), pp.8935-8941. ⟨10.1039/D3TC01107K⟩ Article dans une revue hal-04270769v1
Novel Photonic Applications of Silicon Carbide Haiyan Ou,Xiaodong Shi,Yaoqin Lu,Manuel Kollmuss,Johannes Steineret al. Materials, 2023, 16 (3), pp.1014. ⟨10.3390/ma16031014⟩ Article dans une revue (article de synthèse) hal-04042285v1
Evidence of twin mediated growth in the CVD of polycrystalline silicon carbide Yann Gallou,Marie Dubois,Alexandre Potier,Didier Chaussende Acta Materialia, 2023, 259, pp.119274. ⟨10.1016/j.actamat.2023.119274⟩ Article dans une revue hal-04272514v1
Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices Xiaodong Shi,Yaoqin Lu,Didier Chaussende,Karsten Rottwitt,Haiyan Ou Materials, 2023, 16 (6), pp.2324. ⟨10.3390/ma16062324⟩ Article dans une revue hal-04042276v1
A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions Xinming Xing,Takeshi Yoshikawa,Olga Budenkova,Didier Chaussende Journal of Materials Science, 2022, ⟨10.1007/s10853-021-06816-y⟩ Article dans une revue hal-03515056v1
Design of a coil for electromagnetic levitation: comparison of numerical models and coil realization Romain Pons,Annie Gagnoud,Didier Chaussende,Olga Budenkova Magnetohydrodynamics c/c of Magnitnaia Gidrodinamika, 2022, 58 (1/2), pp.55-64. ⟨10.22364/mhd⟩ Article dans une revue hal-03739247v1
STUDY OF HEAT TRANSFER IN A NICKEL DROPLET IN ELECTROMAGNETIC LEVITATION R Pons,A Gagnoud,D Chaussende,O Budenkova Magnetohydrodynamics c/c of Magnitnaia Gidrodinamika, 2022, 58 (4), pp.483-490. ⟨10.22364/mhd.58.4.12⟩ Article dans une revue hal-04228617v1
Substitutional Carbon Incorporation in SiGeC/Si Heterostructures: Influence of Silicon Precursors Jérémy Vives,Fabien Deprat,Didier Dutartre,Justine Lespiaux,Romain Duruet al. ECS Transactions, 2022, 109 (4), pp.237-248. ⟨10.1149/10904.0237ecst⟩ Article dans une revue hal-04042448v1
In Situ Interferometry for ppm-Order Solubility Analysis at High Temperatures: A Case Study of Carbon Solubility in Molten Silicon Sakiko Kawanishi,Takeshi Yoshikawa,Didier Chaussende,Hiroyuki Shibata Metallurgical and Materials Transactions B, 2021, 52 (4), pp.2619-2625. ⟨10.1007/s11663-021-02216-4⟩ Article dans une revue hal-03413082v1
Structural, Electronic and Vibrational Properties of Al4C3 Joseph Kioseoglou,Hoang‐long Le‐tran,Stefanos Giaremis,Isabelle Gelard,Thierry Ouisseet al. physica status solidi (b), 2019, 256 (10), pp.1900037. ⟨10.1002/pssb.201900037⟩ Article dans une revue hal-02366916v1
Understanding Al incorporation into 4H-SiC during epitaxy Gabriel Ferro,Didier Chaussende,Nikolaos Tsavdaris Journal of Crystal Growth, 2019, 507, pp.338-343. ⟨10.1016/j.jcrysgro.2018.11.034⟩ Article dans une revue hal-02121592v1
Critical assessment and thermodynamic modeling of the Al–C system G. Deffrennes,B. Gardiola,M. Allam,Didier Chaussende,A. Pischet al. Calphad, 2019, 66, pp.101648. ⟨10.1016/j.calphad.2019.101648⟩ Article dans une revue hal-02366921v1
The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS Sven Tengeler,Bernhard Kaiser,Gabriel Ferro,Didier Chaussende,Wolfram Jaegermann Applied Surface Science, 2018, 427, pp.480 - 485. ⟨10.1016/j.apsusc.2017.08.220⟩ Article dans une revue hal-01615027v1
Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4 Simon Forster,Didier Chaussende,Karol Kalna ACS Applied Energy Materials, 2018, 2 (1), pp.715-720. ⟨10.1021/acsaem.8b01767⟩ Article dans une revue hal-02366910v1
Vaporization and condensation in the Al4C3-SiC system Hoang-Long Le-Tran,Eirini Sarigiannidou,Isabelle Gelard,Didier Chaussende Journal of the European Ceramic Society, 2017, 37 (15), pp.4475 - 4482. ⟨10.1016/j.jeurceramsoc.2017.05.038⟩ Article dans une revue hal-01620934v1
Al 4 SiC 4 vibrational properties: density functional theory calculations compared to Raman and infrared spectroscopy measurements L. Pedesseau,O. Chaix-Pluchery,M. Modreanu,D. Chaussende,E. Sarigiannidouet al. Journal of Raman Spectroscopy, 2017, 48 (6), pp.891-896. ⟨10.1002/jrs.5128⟩ Article dans une revue hal-01485456v1
A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy Gabriel Ferro,Didier Chaussende Scientific Reports, 2017, 7, pp.43069. ⟨10.1038/srep43069⟩ Article dans une revue hal-01615178v1
Conversion of MAX phase single crystals in highly porous carbides by high temperature chlorination Shiqui Zhang,Lu Shi,Florian Mercier,O. Chaix-Pluchery,D. Chaussendeet al. Ceramics International, 2017, 43 (11), pp.8246-8254. ⟨10.1016/j.ceramint.2017.03.153⟩ Article dans une revue hal-01762237v1
(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes Sven Tengeler,Bernhard Kaiser,Didier Chaussende,Wolfram Jaegermann Applied Surface Science, 2017, 400, pp.6 - 13. ⟨10.1016/j.apsusc.2016.12.136⟩ Article dans une revue hal-01620939v1
Undercooling measurement and nucleation study of silicon droplets on various substrates M.G. Tsoutouva,T. Duffar,D. Chaussende,M. Kamguem Journal of Crystal Growth, 2016, ⟨10.1016/j.jcrysgro.2016.07.018⟩ Article dans une revue istex hal-01464054v1
A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth Kanaparin Ariyawong,Christian Chatillon,Elisabeth Blanquet,Jean-Marc Dedulle,Didier Chaussende CrystEngComm, 2016, 18 (12), pp.2119-2124. ⟨10.1039/c5ce02480c⟩ Article dans une revue hal-01366561v1
Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC Kanaparin Ariyawong,Yun Ji Shin,Jean-Marc Dedulle,Didier Chaussende Crystal Growth & Design, 2016, 16 (6), pp.3231-3236. ⟨10.1021/acs.cgd.6b00155⟩ Article dans une revue hal-01456078v1
Photoelectrical Parameters of a PVT Grown Bulk 15R-SiC Crystal at Different Stages of Growth Gediminas Liaugaudas,Donatas Dargis,Kestutis Jarašiunas,Nikolaos Tsavdaris,Eirini Sarigiannidouet al. Materials Science Forum, 2015, 821-823, pp.253-256 Article dans une revue hal-02012973v1
Synthesis and Characterization of Al&lt;sub&gt;4&lt;/sub&gt;SiC&lt;sub&gt;4&lt;/sub&gt;: A “New” Wide Band Gap Semiconductor Material Dimitrios Zevgitis,Odette Chaix-Pluchery,Béatrice Doisneau,Mircea Modreanu,Joseph La Mannaet al. Materials Science Forum, 2015, 821-823, pp.974-977 Article dans une revue hal-02012987v1
Magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals and application to the M n + 1 A X n phases T. Ouisse,L. Shi,B. Piot,B. Hackens,V. Mauchampet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 92 (4) Article dans une revue hal-01986020v1
Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties Laurent Pedesseau,Jacky Even,Mircea Modreanu,Didier Chaussende,Erini Sarigiannidouet al. APL Materials, 2015, 3 (12), pp.121101. ⟨10.1063/1.4936667⟩ Article dans une revue hal-01236491v1
Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate K. Alassaad,M. Vivona,V. Soulière,B. Doisneau,F. Cauwetet al. ECS Journal of Solid State Science and Technology, 2014, 3 (8), pp.P285 - P292. ⟨10.1149/2.0121408jss⟩ Article dans une revue hal-01615319v1
Synthesis of single crystals of V2AlC phase by high-temperature solution growth and slow cooling technique Lu Shi,T. Ouisse,E. Sarigiannidou,O. Chaix-Pluchery,H. Rousselet al. Acta Materialia, 2014, 83, pp.304-309. ⟨10.1016/j.actamat.2014.10.018⟩ Article dans une revue istex hal-01226018v1
Interface Shape: A Possible Cause of Polytypes Destabilization during Seeded Sublimation Growth of 15R-SiC Nikolaos Tsavdaris,Kanaparin Ariyawong,Eirini Sarigiannidou,Jean Marc Dedulle,Odette Chaix-Plucheryet al. Materials Science Forum, 2014, 806, pp.61-64. ⟨10.4028/www.scientific.net/MSF.806.61⟩ Article dans une revue hal-02012985v1
Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide Nikolaos Tsavdaris,Kanaparin Ariyawong,Jean-Marc Dedulle,Eirini Sarigiannidou,Didier Chaussende Crystal Growth & Design, 2014, 15 (1), pp.156-163 Article dans une revue hal-02012984v1
On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates Gediminas Liaugaudas,Kestutis Jarašiunas,Nikolaos Tsavdaris,Eirini Sarigiannidou,Didier Chaussende Materials Science Forum, 2014, 778-780, pp.305-308 Article dans une revue hal-02012879v1
Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT Kanaparin Ariyawong,Elisabeth Blanquet,Jean Marc Dedulle,Thierry Ouisse,Didier Chaussende Materials Science Forum, 2014, 778-780, pp.778-780. ⟨10.4028/www.scientific.net/MSF.778-780.35⟩ Article dans une revue hal-01122442v1
Nondestructive Evaluation of Photoelectrical Properties of a PVT Grown Bulk 15R-SiC Crystal Gediminas Liaugaudas,Kestutis Jarašiunas,Nikolaos Tsavdaris,Eirini Sarigiannidou,Didier Chaussende Materials Science Forum, 2014, 806, pp.65-69 Article dans une revue hal-02012974v1
Spiral step dissociation on PVT grown SiC crystals Martin Seiss,Thierry Ouisse,Didier Chaussende Materials Science Forum, 2014, Vols. 778-780, pp.39-42. ⟨10.4028/www.scientific.net/MSF.778-780.39⟩ Article dans une revue hal-01067413v1
Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC Xiaojian Li,H. Jacobson,Alexandre Boulle,D. Chaussende,A. Henry ECS Journal of Solid State Science and Technology, 2014, 3 (4), pp.P75-P81. ⟨10.1149/2.012404jss⟩ Article dans une revue hal-01226019v1
Open Issues in SiC Bulk Growth Jean-Marc Dedulle,Didier Chaussende,Kanaparin Ariyawong,Nikolaos Tsavdaris,Martin Seisset al. Materials Science Forum, 2014, 778-780 (6), pp.3-8 Article dans une revue hal-02012866v1
Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation Nikolaos Tsavdaris,Kanaparin Ariyawong,Odette Chaix-Pluchery,Jean Marc Dedulle,Eirini Sarigiannidouet al. Materials Science Forum, 2014, 778-780, pp.13-16. ⟨10.4028/www.scientific.net/MSF.778-780.13⟩ Article dans une revue hal-02012874v1
Birefringence Microscopy of Unit Dislocations in Diamond L. T. M. Hoa,T. Ouisse,D. Chaussende,M. Naamoun,A. Tallaireet al. Crystal Growth & Design, 2014, 14 (11), pp.5761-5766. ⟨10.1021/cg5010193⟩ Article dans une revue hal-01226020v1
Epitaxial graphene morphologies probed by weak (anti)-localization Ather Mahmood,Cécile Naud,Clément Bouvier,Fanny Hiebel,Pierre Malletet al. Journal of Applied Physics, 2013, 113 (8), pp.083715. ⟨10.1063/1.4793591⟩ Article dans une revue hal-00705711v2
Comparison of the spiral growth modes of silicon-face and carbon-face silicon carbide crystals Martin Seiss,T. Ouisse,D. Chaussende Journal of Crystal Growth, 2013, 384, pp.129-134. ⟨10.1016/j.jcrysgro.2013.09.022⟩ Article dans une revue istex hal-01067412v1
Polytypic transformations in SiC : diuse X-ray scattering and Monte Carlo simulations Alexandre Boulle,D. Dompoint,I. Galben-Sandulache,D. Chaussende Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (2), ⟨10.1103/PhysRevB.88.024103⟩ Article dans une revue hal-02193723v1
High temperature solution growth and characterization of Cr2AlC single crystals T. Ouisse,E. Sarigiannidou,O. Chaix-Pluchery,Hervé Roussel,B. Doisneauet al. Journal of Crystal Growth, 2013, 384, pp.88-95. ⟨10.1016/j.jcrysgro.2013.09.021⟩ Article dans une revue istex hal-01067401v1
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study C. Coletti,S. Forti,A. Principi,K. V. Emtsev,A. A. Zakharovet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (15), pp.155439. ⟨10.1103/PhysRevB.88.155439⟩ Article dans une revue hal-01067356v1
3C-SiC heteroepitaxy on hexagonal SiC substrates A. Henry,Xiaojian Li,H. Jacobson,S. Andersson,Alexandre Boulleet al. Materials Science Forum, 2013, Volumes 740 - 742 (Chapter 4: Epitaxial Growth 3C SiC), pp.267-270. ⟨10.4028/www.scientific.net/MSF.740-742.267⟩ Article dans une revue hal-00945824v1
Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals A. Debelle,M. Backman,L. Thome,W. Weber,M. Toulemondeet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (10), ⟨10.1103/PhysRevB.86.100102⟩ Article dans une revue hal-02193726v1
On the stability of 3C-SiC single crystals at high temperatures Deborah Dompoint,Irina Galben-Sandulache,Alexandre Boulle,Didier Chaussende,Dominique Eyidiet al. Materials Science Forum, 2012, 717-720, pp.493-496. ⟨10.4028/www.scientific.net/MSF.717-720.493⟩ Article dans une revue hal-02193762v1
Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma. J.H Choi.,L. Latu-Romain.,F. Dhalluin.,T. Chevolleau.,B. Salemet al. Materials Science Forum, 2012, 711, pp. 66-69 Article dans une revue hal-00762143v1
Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent J. Lefebure,J. M. Dedulle,T. Ouisse,D. Chaussende Crystal Growth & Design, 2012, 12 (2), pp.909-913. ⟨10.1021/cg201343w⟩ Article dans une revue hal-01067388v1
Diffuse X-ray scattering from partially transformed 3C-SiC single crystals D. Dompoint,Alexandre Boulle,I.G. Galben-Sandulache,D. Chaussende Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 284, pp.19-22. ⟨10.1016/j.nimb.2011.09.008⟩ Article dans une revue istex hal-02193739v1
Critical assessment of birefringence imaging of dislocations in 6H silicon carbide L. T. M. Hoa,T. Ouisse,D. Chaussende Journal of Crystal Growth, 2012, 354 (1), pp.202-207. ⟨10.1016/j.jcrysgro.2012.06.009⟩ Article dans une revue istex hal-01067372v1
Application of an axial next-nearest-neighbor Ising model to the description of Mn+1AXn phases T. Ouisse,D. Chaussende Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85 (10), pp.104110. ⟨10.1103/PhysRevB.85.104110⟩ Article dans une revue hal-01067399v1
Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD A. Claudel,E. Blanquet,D. Chaussende,R. Boichot,Roland Martinet al. Journal of The Electrochemical Society, 2011, 158 (3), pp.H328-H332. ⟨10.1149/1.3536477⟩ Article dans une revue hal-00640123v1
Large area quasi-free standing monolayer graphene on 3C-SiC(111) C. Coletti,K. V. Emtsev,A. A. Zakharov,T. Ouisse,D. Chaussendeet al. Applied Physics Letters, 2011, 99 (8), pp.081904. ⟨10.1063/1.3618674⟩ Article dans une revue hal-01067355v1
Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD). A. Claudel,Y. Chowanek,E. Blanquet,D. Chaussende,R. Boichotet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (7-8), pp.2019-2021 Article dans une revue hal-00692267v1
Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: a diuse X-ray scattering study D. Dompoint,Alexandre Boulle,I. Galben-Sandulache,D. Chaussende,L. T M Hoaet al. Journal of Applied Physics, 2011, 110 (5), pp.053508. ⟨10.1063/1.3627371⟩ Article dans une revue hal-02193765v1
From Si nanowire to SiC nanotube L. Latu-Romain,M. Ollivier,A. Mantoux,G. Auvert,O. Chaix-Plucheryet al. Journal of Nanoparticle Research, 2011, 13 (10), pp.5425-5433. ⟨10.1007/s11051-011-0530-9⟩ Article dans une revue istex hal-00629242v1
Raman scattering from Ti3SiC2 single crystals Florian Mercier,O. Chaix-Pluchery,T. Ouisse,D. Chaussende Applied Physics Letters, 2011, 98 (8), pp.081912. ⟨10.1063/1.3558919⟩ Article dans une revue hal-01067392v1
Morphological instabilities induced by foreign particles and Ehrlich-Schwoebel effect during the two-dimensional growth of crystalline Ti3SiC2 Florian Mercier,T. Ouisse,D. Chaussende Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (7), pp.075411. ⟨10.1103/PhysRevB.83.075411⟩ Article dans une revue hal-01067393v1
Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system K. Seki,A. Alexander,S. Kozawa,T. Ujihara,Patrick Chaudouetet al. Journal of Crystal Growth, 2011, 335 (1), pp.94-99. ⟨10.1016/j.jcrysgro.2011.09.004⟩ Article dans une revue istex hal-01067466v1
Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process. A. Claudel,E. Blanquet,D. Chaussende,R. Boichot,B. Doisneauet al. Journal of Crystal Growth, 2011, 335 (1), pp.17-24. ⟨10.1016/j.jcrysgro.2011.09.018⟩ Article dans une revue istex hal-00664176v1
Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals A. Debelle,L. Thome,D Dompoint,Alexandre Boulle,F. Garridoet al. Journal of Physics D: Applied Physics, 2010, 43 (45), pp.455408. ⟨10.1088/0022-3727/43/45/455408⟩ Article dans une revue istex hal-02193735v1
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase Olivier Kim-Hak,Jean Lorenzzi,Nikoletta Jegenyes,Gabriel Ferro,Davy Caroleet al. Materials Science Forum, 2010, 645-648, pp.163-166. ⟨10.4028/www.scientific.net/MSF.645-648.163⟩ Article dans une revue hal-02735381v1
Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts Frédéric Mercier,Irina G. Galben-Sandulache,Maya Marinova,Georgios Zoulis,Thierry Ouisseet al. Materials Science Forum, 2010, Materials Science Forum, 645-648, pp.59-62. ⟨10.4028/www.scientific.net/MSF.645-648.59⟩ Article dans une revue hal-02510365v1
Micropipe-induced birefringence in 6H silicon carbide T. Ouisse,D. Chaussende,L. Auvray Journal of Applied Crystallography, 2010, 43, pp.122-133. ⟨10.1107/s0021889809043957⟩ Article dans une revue istex hal-01067400v1
Quantitative analysis of diffuse X-ray scattering in partially transformed 3C-SiC single crystals Alexandre Boulle,D. Dompoint,I. Galben-Sandulache,D. Chaussende Journal of Applied Crystallography, 2010, 43 (4), pp.867-875. ⟨10.1107/S0021889810019412⟩ Article dans une revue istex hal-02193826v1
Evolution of 3C-SiC islands nucleated from a liquid phase on Si face alpha-SiC substrates O. Kim-Hak,G. Ferro,J. Lorenzzi,D. Carole,J. Dazordet al. Thin Solid Films, 2010, 518 (15), pp.4234-4241. ⟨10.1016/j.tsf.2009.12.086⟩ Article dans une revue istex hal-01067377v1
Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth Frédéric Mercier,Jean-Marc Dedulle,Didier Chaussende,Michel Pons Journal of Crystal Growth, 2010, 312 (2), pp.155-163. ⟨10.1016/j.jcrysgro.2009.10.007⟩ Article dans une revue istex hal-00466813v1
Growth of thick AIN layers by high temperature CVD ('HTCVD) A. Claudel,E. Blanquet,D. Chaussende,M. Audier,D. Piqueet al. Materials Science Forum, 2009, 600-603, pp.1269-1272 Article dans une revue hal-00389378v1
A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates M. Marinoya,Florian Mercier,A. Mantzari,I. Galben,D. Chaussendeet al. Physica B: Condensed Matter, 2009, 404 (23-24), pp.4749-4751. ⟨10.1016/j.physb.2009.08.190⟩ Article dans une revue istex hal-01067391v1
High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD). A. Claudel,E. Blanquet,D. Chaussende,Roland Martin,D. Piqueet al. ECS Transactions, 2009, 25 (8), pp.323-326 Article dans une revue hal-00457445v1
Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD A. Claudel,E. Blanquet,D. Chaussende,M. Audier,D. Piqueet al. Journal of Crystal Growth, 2009, 311 (13), pp.3371-3379. ⟨10.1016/j.jcrysgro.2009.03.053⟩ Article dans une revue hal-00408487v1
The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering Alexandre Boulle,J. Aubé,I. Galben-Sandulache,D. Chaussende Applied Physics Letters, 2009, 94 (20), pp.201904. ⟨10.1063/1.3141509⟩ Article dans une revue hal-02190246v1
Silicon Carbide growth : C/Si ratio Evaluation and Modeling M. Pons,S.I. Nishizawa,P. Wellmann,E. Blanquet,D. Chaussendeet al. Materials Science Forum, 2009, 600-603, pp.83-88 Article dans une revue hal-00389369v1
Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy D. Chaussende,Florian Mercier,R. Madar,M. Pons Materials Science Forum, 2009, 600-603, pp.71-74 Article dans une revue hal-00374734v1
Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate O. Kim-Hak,G. Ferro,J. Dazord,M. Marinova,J. Lorenzziet al. Journal of Crystal Growth, 2009, 311 (8), pp.2385-2390. ⟨10.1016/j.jcrysgro.2009.01.132⟩ Article dans une revue istex hal-01067376v1
Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD) E. Blanquet,D. Chaussende,A. Claudel,D. Pique,M. Pons Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S348-S351 Article dans une revue hal-00432756v1
Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering Alexandre Boulle,D. Chaussende,F. Conchon,G. Ferro,O. Masson Journal of Crystal Growth, 2008, 310 (5), pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩ Article dans une revue istex hal-02193853v1
Prospects for 3C-SiC bulk crystal growth Didier Chaussende,Frédéric J. Mercier,Alexandre Boulle,Florine Conchon,Maher Soueidanet al. Journal of Crystal Growth, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩ Article dans une revue hal-00174181v1
Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering Alexandre Boulle,D. Chaussende,F. Pecqueux,Florine Conchon,L. Latu-Romainet al. Physica Status Solidi A (applications and materials science), 2007, 204 (8), pp.2528-2534. ⟨10.1002/pssa.200675652⟩ Article dans une revue istex hal-00176514v1
Status of SiC bulk growth process Didier Chaussende,Peter Wellmann,Michel Pons Journal of Physics D: Applied Physics, 2007, 20 (20), pp.6150-6158. ⟨10.1088/0022-3727/40/20/S02⟩ Article dans une revue istex hal-00114194v1
High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding G. Chichignoud,M. Pons,E. Blanquet,D. Chaussende,M. Anikinet al. Surface and Coatings Technology, 2006, 201 (7), pp.4014-4020 Article dans une revue hal-00141052v1
X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals Alexandre Boulle,D. Chaussende,L. Latu-Romain,F. Conchon,O. Massonet al. Applied Physics Letters, 2006, 89 (9), pp.091902. ⟨10.1063/1.2338787⟩ Article dans une revue hal-02193856v1
Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process Didier Chaussende,Elisabeth Blanquet,Francis Baillet,Magali Ucar,Guy Chichignoud Chemical Vapor Deposition, 2006, 12 (8-9), pp.541-548. ⟨10.1002/cvde.200606471⟩ Article dans une revue istex hal-00118819v1
Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism Maher Soueidan,Gabriel Ferro,B. Nsouli,Mohamad Roumie,Efsthatios Polychroniadiset al. Crystal Growth & Design, 2006, 6 (11), pp.2598-2602. ⟨10.1021/cg0603523⟩ Article dans une revue hal-00389882v1
Characterization of bulk &lt;111&gt; 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method L. Latu-Romain,D. Chaussende,C. Balloud,S. Juillaguet,L. Rapenneet al. Silicon carbide and related materials, 2006, pp.527-529 / 99-102 Article dans une revue hal-00394389v1
High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces Laurence Latu-Romain,Didier Chaussende,Michel Pons Crystal Growth & Design, 2006, 6 (12), pp.2788-2794. ⟨10.1021/cg060420l⟩ Article dans une revue hal-00133832v1
High temperature nucleation of cubic silicon carbide on (0001) hexagonal SiC nominal surfaces L. Latu-Romain,D. Chaussende,M. Pons Crystal Growth & Design, 2006, 6 (12), pp.2788-2794 Article dans une revue hal-00141565v1
Study of 3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces by the CF-PVT method Laurence Latu-Romain,Didier Chaussende,Patrick Chaudouët,Florence Robaut,Gregory Berthoméet al. Journal of Crystal Growth, 2005, 275, pp.e609-e613. ⟨10.1016/j.jcrysgro.2004.11.005⟩ Article dans une revue istex hal-00188007v1
Control of the Supersaturation in the CF-PVT Process for the Growth of Silicon Carbide Crystals: Research and Applications Didier Chaussende,Magali Ucar,Laurent Auvray,Francis Baillet,Michel Ponset al. Crystal Growth & Design, 2005, 5 (4), pp.1539-1544. ⟨10.1021/cg050009i⟩ Article dans une revue hal-00118809v1
Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method Laurent Auvray,Didier Chaussende,Francis Baillet,Ludovic Charpentier,Michel Ponset al. Materials Science Forum, 2004, 457-460, pp.135-138. ⟨10.4028/www.scientific.net/MSF.457-460.135⟩ Article dans une revue hal-05313999v1
Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method Didier Chaussende,Carole Balloud,Laurent Auvray,Francis Baillet,Marcin Zielinskiet al. Materials Science Forum, 2004, 457-460, pp. 91-94. ⟨10.4028/0-87849-943-1.91⟩ Article dans une revue hal-00417942v1
Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization Michel Pons,Francis Baillet,Elisabeth Blanquet,Etienne Pernot,Roland Madaret al. Applied Surface Science, 2003, 212-213, pp.177-183. ⟨10.1016/S0169-4332(03)00064-3⟩ Article dans une revue istex hal-00187935v1
Continuous Feed Physical Vapor Transport : Toward High Purity and Long Boule Growth of SiC Didier Chaussende,Francis Baillet,Ludovic Charpentier,Etienne Pernot,Michel Ponset al. Journal of The Electrochemical Society, 2003, 150 (10), pp.G653-G657. ⟨10.1149/1.1606689⟩ Article dans une revue hal-00187159v1
Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging Etienne Pernot,I. El Harrouni,Michel Mermoux,Jean-Marie Bluet,Mikhail Anikinet al. Materials Science Forum, 2003, 433-436, pp. 265-268. ⟨10.4028/www.scientific.net/MSF.433-436.265⟩ Article dans une revue hal-00418043v1
SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt Christophe Jacquier,Gabriel Ferro,François Cauwet,Didier Chaussende,Yves Monteil Crystal Growth & Design, 2003, 3 (3), pp.285-287. ⟨10.1021/cg0256069⟩ Article dans une revue hal-00187892v1
A comprehensive study of SiC growth processes in a VPE reactor Thierry Chassagne,Gabriel Ferro,Didier Chaussende,François Cauwet,Yves Monteilet al. Thin Solid Films, 2002, 402, pp.83-89 Article dans une revue hal-00187126v1
Single atomic steps on SiC polished surfaces Patrice Vicente,Didier Chaussende III-Vs Review, 2002, 15 (4), pp.46-47 Article dans une revue hal-00187897v1
Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE Didier Chaussende,Gabriel Ferro,Yves Monteil Journal of Crystal Growth, 2002, 234, pp.63-69 Article dans une revue hal-00187136v1
Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide Christophe Jacquier,Didier Chaussende,Gabriel Ferro,Jean-Claude Viala,François Cauwetet al. Journal of Materials Science, 2002, 37, pp.3299-3306 Article dans une revue hal-00187149v1
Thermochemistry of silicon carbide growth by chemical transport reactions Didier Chaussende,Gabriel Ferro,Yves Monteil,Christian Brylinski,Jean Bouix Journal of Materials Science, 2001, 36, pp.335-342 Article dans une revue hal-00186942v1
Role of SIMOX defects on the structural properties of b-SiC:SIMOX Gabriel Ferro,Nicolas Planes,Victoria Papaioannou,Didier Chaussende,Yves Monteilet al. Materials Science and Engineering: B, 1999, 61-62, pp.586-592 Article dans une revue hal-00186941v1
Thermodynamical calculations on the chemical vapor transport of silicon carbide Didier Chaussende,Yves Monteil,Patrick Aboughe-Nze,Christian Brylinski,Jean Bouix Materials Science and Engineering: B, 1999, 61-62, pp.98-101 Article dans une revue hal-00186935v1

Communication dans un congrès (62)

Strong Third-order Nonlinearity in Silicon-rich Amorphous Silicon Carbide Integrated Platforms Yaoqin Lu,Xiaodong Shi,Adnan Ali Afridi,Didier Chaussende,Karsten Rottwittet al. CLEO: Applications and Technology, May 2024, Charlotte, United States. pp.JTh2A.22, ⟨10.1364/CLEO_AT.2024.JTh2A.22⟩ Communication dans un congrès hal-04800385v1
2-inch SiC solution growth using SiC liner crucible fabricated by reactive infiltration Sakiko Kawanishi,Takeshi Mitani,Sora Ashimoto,Didier Chaussende,Takeshi Yoshikawa JIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan Communication dans un congrès hal-04799833v1
Screening trial of step-bunching behavior on 4H-SiC (000-1) in various solvents by interface reconstruction Tomoya Noji,Masashi Nakamoto,Masanori Suzuki,Takeshi Yoshikawa,Sakiko Kawanishiet al. JIM Fall Meeting, The Japan Institute of Metals and Materials, Sep 2024, Osaka, Japan Communication dans un congrès hal-04799831v1
Experimental study of an electromagnetically levitated droplet of liquid metal under a superposed horizontal magnetic DC field Romain Pons,Abdelmagid El Bakali,Paul Chometon,A. Gagnoud,Didier Chaussendeet al. 13th PAMIR International Conference - Fundamental and Applied MHD, EuMHD; CEA IRESNE; UGA; CNRS; Grenoble INP, Sep 2024, Carry-le-Rouet, France. pp.194-199 Communication dans un congrès hal-04774080v1
Nucleation and Growth Mechanisms of Polycrystalline SiGe-Based Materials By Chemical Vapor Deposition at Reduced Pressure Jeremy Vives,Julie Chaussard,Fabien Deprat,Marvin Frauenrath,Ece Aybekeet al. PRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States Communication dans un congrès hal-04799786v1
Benchmarking of HCl-Based Cyclic Deposition / Etch (CDE) and Single Deposition / Etch (DE) Processes for Selective Epitaxial Growth of SiGeC:B Films Jeremy Vives,Fabien Deprat,Marvin Frauenrath,Stephane Verdier,Ece Aybekeet al. PRiME 2024, The Electrochemical Society, Oct 2024, Honolulu, HI, United States Communication dans un congrès hal-04799826v1
Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron spectroscopy Jeremy Vives,Stéphane Verdier,Fabien Deprat,Marvin Frauenrath,Romain Duruet al. ICS-ISTDM 2023, May 2023, Como, Italy Communication dans un congrès hal-04800320v1
AC Calorimetry of Liquid Metals in Electromagnetic Levitation: Comparison of Procedures in Microgravity and Terrestrial Conditions: Romain Pons,A. Gagnoud,Didier Chaussende,Olga Budenkova TMS 2023 Materials Research in Reduced Gravity — Thermophysical Properties, Mar 2023, San-Diego, CA, United States Communication dans un congrès hal-04861711v1
Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al Gabriel Ferro,Didier Chaussende 18th International Conference on Silicon Carbide and Related Materials (ICSCRM 2019), Sep 2019, Kyoto, Japan. pp.96-101, ⟨10.4028/www.scientific.net/MSF.1004.96⟩ Communication dans un congrès hal-02990885v1
Sublimation growth of a new promising semiconductor Al4SiC4 Hoang-Long Le Tran,Eirini Sarigiannidou,Odette Chaix-Pluchery,Isabelle Gélard,Thierry Ouisseet al. E- MRS Spring, May 2017, Strasbourg, France Communication dans un congrès hal-02112233v1
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC Nikolaos Tsavdaris,Pawel Kwasnicki,Kanaparin Ariyawong,Nathalie Valle,Herve Peyreet al. ECSCRM, Sep 2014, Grenoble, France. pp.60 - 63, ⟨10.4028/www.scientific.net/MSF.821-823.60⟩ Communication dans un congrès hal-01936649v1
Optical properties of wide band gap Al4SiC4: experimental and theoretical approaches Laurent Pedesseau,Jacky Even,Olivier Durand,Mircea Modreanu,D. Chaussendeet al. European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France Communication dans un congrès hal-01162159v1
Effect of aluminum during the high temperature solution growth of Si-face 4H-SiC D. Chaussende,L. Parent-Bert,Y.J. Shin,T. Ouisse,T. Yoshikawa 16th International Conference on Silicon Carbide and Related Materials, Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02016972v1
Experimental investigation of the seeding stage during SiC solution growth using Si and Si - Al solvents Yun Ji Shin,Beatrice Doisneau,Kanaparin Ariyawong,Pierre Brosselard,Didier Chaussende International conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy. ⟨10.4028/www.scientific.net/MSF.858.81⟩ Communication dans un congrès hal-02016968v1
Top seeded solution growth of 4H - SiC single crystal using graphite block with rough surface Ji-Young Yoon,Byeong Geun Kim,Ji-Eun Lee,Myung -Hyun Lee,Won- Seon Seoet al. International Conference on Silicon Carbide and Related Materials 2015, Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02016964v1
Wide optical band gap Al4SiC4 Laurent Pedesseau,Jacky Even,Olivier Durand,Mircea Modreanu,Didier Chaussendeet al. European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland Communication dans un congrès hal-01203372v1
Ge assisted SiC epitaxial growth by CVD on SiC substrate Kassem Alassaad,Véronique Soulière,Beatrice Doisneau,François Cauwet,Hervé Peyreet al. 15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩ Communication dans un congrès hal-02025422v1
3C-SiC heteroepitaxy on hexagonal SiC substrates A. Henry,Xiaojian Li,H. Jacobson,S. Andersson,Alexandre Boulleet al. European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2012, Saint Petersburg, Russia Communication dans un congrès hal-00944202v1
Diffuse X-Ray scattering and Monte Carlo studies of spatially correlated stacking faults in SiC Alexandre Boulle,Deborah Dompoint,I. Galben Sandulache,D. Chaussende 2012 MRS Fall Meeting & Exhibit, Nov 2012, Boston, United States Communication dans un congrès hal-00952309v1
Etude structurale des dislocations dans les polytypes 4H et 3C de SiC J.L. Demenet,A. Madyan,J. Rabier,C. Tromas,D. Eyidiet al. Journées Plénières du GnR Matinex 2011, Feb 2012, Lyon, France Communication dans un congrès hal-00952203v1
Experimental study of defect recovery induced by swift heavy ions in 6H-SiC and 3C-SiC A. Debelle,Alexandre Boulle,L. Thome,F. Garrido,M. Backmanet al. MRS 2012 Spring Meeting, Apr 2012, San Francisco, United States Communication dans un congrès hal-00952235v1
Growth of Ti3SiC2 single crystals Didier Chaussende,Thierry Ouisse 36th International Conference and Expo on Advanced Ceramics and Composites, Jan 2012, Daytona Beach (Floride), United States Communication dans un congrès hal-00672082v1
SiC and AlN growth processing : experiments and simulation. M. Pons,D. Chaussende,J.M. Dedulle,R. Boichot,E. Blanquet International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India Communication dans un congrès hal-00692283v1
Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication. E. Blanquet (invitée),A. Claudel,V. Brizé,R. Boichot,D. Chaussendeet al. International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India Communication dans un congrès hal-00692280v1
Recent advances on SiC bulk growth processes Didier Chaussende Confidential, Nov 2011, Pohang, South Korea Communication dans un congrès hal-00672078v1
Initiation d'une &quot; filière nitrures à grand gap &quot; : croissance et caractérisation de cristaux massifs d'AlN pour les applications optoélectroniques Didier Chaussende Journée Recherche de Grenoble INP, Feb 2011, Grenoble, France Communication dans un congrès hal-00672062v1
SiC bulk growth processes: achievements and next challenges Didier Chaussende 2nd Annual Meeting of the SiC Research Community in Korea, Nov 2011, Seoul, South Korea Communication dans un congrès hal-00672069v1
Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronics M. Pons,S. Nishizawa,E. Blanquet,R. Boichot,D. Chaussende Renewable Energy 2010, Jun 2010, Yokohama, Japan Communication dans un congrès hal-00502036v1
Defects and Polytypism in SiC: The Role of Diffuse X-Ray Scattering Alexandre Boulle,D. Dompoint,I. Galben-Sandulache,D. Chaussende 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩ Communication dans un congrès hal-02193824v1
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the seeded growth of 3C-SiC Crystals G.L. Sun,I.G. Galben-Sandulache,T. Ouisse,J.M. Dedulle,M. Ponset al. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.63-66, ⟨10.4028/www.scientific.net/MSF.645-648.63⟩ Communication dans un congrès hal-00517405v1
SiC bulk growth technologies Didier Chaussende Winter School on Growth and epitaxy, Jan 2010, Linköping, Sweden Communication dans un congrès hal-00671985v1
Vapor Phase vs. Liquid Phase: What is the Best Choice for the Growth of Bulk 3C-SiC Crystals? D. Chaussende European Materials Research Society (E-MRS) Spring meeting, Jun 2010, Strasbourg, France Communication dans un congrès hal-00672043v1
Overview of SiC bulk growth processes D. Chaussende Confidential, Dec 2010, Amagasaki, Japan Communication dans un congrès hal-00672047v1
Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering Deborah Dompoint,Alexandre Boulle,I.G. Galben-Sandulache,D. Chaussende E-MRS, Jun 2010, Strasbourg, France. pp.71-74, ⟨10.1063/1.3518314⟩ Communication dans un congrès hal-00686913v1
Study of the spontaneous nucleation of 3C-SiC single crystals using CF-PVT technique I.G. Galben-Sandulache,G.L. Sun,J.M. Dedulle,T. Ouisse,R. Madaret al. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nurnberg, Germany. pp.55-58, ⟨10.4028/www.scientific.net/MSF.645-648.55⟩ Communication dans un congrès hal-00517395v1
Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling M. Pons,S. Nishizawa,P. Wellmann,E. Blanquet,D. Chaussendeet al. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88 Communication dans un congrès hal-00173481v1
Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD) A. Claudel,D. Chaussende,E. Blanquet,D. Pique,M. Pons 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990 Communication dans un congrès hal-00426590v1
Cristallogenèse des semi-conducteurs à grand gap : contexte et enjeux D. Chaussende Les Midis MINATEC, Jun 2009, Grenoble, France Communication dans un congrès hal-00671980v1
Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT J. Eid,I.-G. Galben,G. Zoulis,Teddy Robert,D. Chaussendeet al. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48 Communication dans un congrès hal-00390466v1
Growth of thick AlN layers by High Temperature CVD A. Claudel,E. Blanquet,D. Chaussende,M. Audier,D. Piqueet al. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272 Communication dans un congrès hal-00337372v1
Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC Maya Marinova,Georgios Zoulis,Teddy Robert,Frederic Mercier,Alkioni Mantzariet al. 25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730 Communication dans un congrès hal-00543681v1
Dislocation-Induced Birefringence in Silicon Carbide Thierry Ouisse,Didier Chaussende,Laurent Auvray,Etienne Pernot,Roland Madar 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.271-274, ⟨10.4028/www.scientific.net/MSF.615-617.271⟩ Communication dans un congrès hal-02890909v1
Top Seeded Solution Growth of 3C-SiC single crystals Frédéric Mercier,Didier Chaussende,Jean-Marc Dedulle,Michel Pons,Roland Madar 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.41-44, ⟨10.4028/www.scientific.net/MSF.615-617.41⟩ Communication dans un congrès hal-00426587v1
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase Didier Chaussende,Jessica Eid,Frédéric Mercier,Roland Madar,Michel Pons 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.31-36, ⟨10.4028/www.scientific.net/MSF.615-617.31⟩ Communication dans un congrès hal-00389062v1
Comparative study of differently grown 3C-SiC single crystals with birefringence microscopy Florian Mercier,D. Chaussende,R. Madar,M. Pons Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.71-74 Communication dans un congrès hal-00337375v1
Characterization of stacking faults in thick 3C-SiC crystals using high resolution diffuse X-ray scattering Alexandre Boulle,D. Chaussende,Florine Conchon,Florian Mercier,G. Ferroet al. E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2008, Strasbourg, France Communication dans un congrès hal-00285929v1
Modeling of 3C-SiC Single Crystal Growth J.M. Dedulle,Florian Mercier,D. Chaussende,M. Pons Conférence européenne COMSOL, 2007, France. pp.8 Communication dans un congrès hal-00196662v1
Mechanism Of Orientation Selection For The Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals On Hexagonal Basis L. Latu-Romain,D. Chaussende,L. Rapenne,M. Pons,R. Madar European Conference on Silicon Carbide and Related Materials, 2006, Newcastle, United Kingdom. pp.199-202 Communication dans un congrès hal-00149093v1
Determination of stacking fault densities in 3C-SiC crystals by diffuse X-ray scattering Alexandre Boulle,D. Chaussende,Florine Conchon,G. Ferro,Olivier Masson International Workshop on 3C-SiC Heteroepitaxy (HeteroSiC 07), Jun 2007, Grenoble, France Communication dans un congrès hal-00286549v1
Preliminary study of 3C-SiC growth from high temperature solution Florian Mercier,D. Chaussende,J.M. Dedulle,M. Pons Hetero'SiC'07, 2007, France. pp.2 Communication dans un congrès hal-00196665v1
Prospects for 3C-SiC bulk crystal growth D. Chaussende,Florian Mercier,Alexandre Boulle,Florine Conchon,M. Soueidanet al. E-MRS 2007 Spring Meeting, Symposium G, Strasbourg, May 2007, Starsbourg, France Communication dans un congrès hal-00285924v1
Croissance de semi-conducteurs à grand gap Jean-Marc Dedulle,Didier Chaussende,Romain Madar,Michel Pons,Elisabeth Blanquetet al. CFM 2007 - 18ème Congrès Français de Mécanique, Aug 2007, Grenoble, France Communication dans un congrès hal-03360397v1
High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding G. Chichignoud,M. Pons,E. Blanquet,D. Chaussende,M. Anikinet al. International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States Communication dans un congrès hal-00149073v1
Modèle de champ de phase pour la croissance cristalline J.M. Dedulle,D. Chaussende,M. Pons,R. Madar MATERIAUX 2006, 2006, Dijon, France. pp.10 Communication dans un congrès hal-00196658v1
SiC growth : evaluation and modeling M. Pons,S. Nishizawa,P. Wellmann,E. Blanquet,J. M. Dedulleet al. MRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77 Communication dans un congrès hal-00141104v1
High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling E. Blanquet,D. Chaussende,S. Nishizawa,M. Pons European conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20 Communication dans un congrès hal-00141097v1
Gas fed top-seeded solution growth of silicon carbide Didier Chaussende,Roland Madar,Michel Pons 2006, pp.111-114 Communication dans un congrès hal-00133834v1
In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging Didier Chaussende,Peter J. Wellmann,Magali Ucar,Michel Pons,Roland Madar 2006, pp.63-66 Communication dans un congrès hal-00140007v1
Growth of AlN and AlN-SiC solid solution by sublimation method M. Anikin,D. Chaussende,Etienne Pernot,Hervé Roussel,O. Chaixet al. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.1501-1504 Communication dans un congrès hal-00173468v1
In-situ observation by X-ray imaging of mass transfer in the CF-PVT growth process L. Latu-Romain,D. Chaussende,C. Balloud,J. Camassel,Etienne Pernotet al. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.99-102 Communication dans un congrès hal-00173466v1
Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism M. Soueidan,G. Ferro,J. Stoemenos,E. K. Polychroniadis,D. Chaussendeet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh (PA), France. pp.287-290 Communication dans un congrès hal-00140124v1
Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method L. Latu-Romain,D. Chaussende,Carole Balloud,Sandrine Juillaguet,L. Rapenneet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩ Communication dans un congrès hal-00541637v1

Poster de conférence (2)

Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C Gabriel Ferro,Davy Carole,Didier Chaussende International conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy Poster de conférence hal-04888078v1
Experimental study and thermodynamic modelling of the Al-C-Mg system Guillaume Deffrennes,Bruno Gardiola,Erwann Jeanneau,Georges Mikaelian,Benigni P.et al. International Conference on Computer Coupling of Phase Diagrams and Thermochemistry, CALPHAD 2019, Jun 2019, Singapore, Singapore Poster de conférence hal-04753621v1

Chapitre d'ouvrage (2)

Silicon carbide Didier Chaussende,Noboru Ohtani Single Crystals of Electronic Materials, Elsevier, pp.129-179, 2019, ⟨10.1016/B978-0-08-102096-8.00005-7⟩ Chapitre d'ouvrage hal-02366922v1
VLS growth of SiC epilayers Gabriel Ferro,Didier Chaussende,Christophe Jacquier M. Syväjârvi and R. Yakimova. Wide band gap materials and new developments, Research signpost, pp.91-116, 2006 Chapitre d'ouvrage hal-00140374v1

Brevet (2)

FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE R. Madar,M. Pons,Francis Baillet,L. Charpentier,Etienne Pernotet al. Patent n° : EP1511884. TOP. 2005 Brevet hal-00386315v1
FORMATION OF SINGLE-CRYSTAL SILICON CARBIDE R. Madar,M. Pons,Francis Baillet,L. Charpentier,D. Chaussendeet al. Patent n° : US2005257734. TOP. 2005 Brevet hal-00386316v1

Autre publication scientifique (1)

Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°C Gabriel Ferro,Davy Carole,Didier Chaussende 2024, pp.17-21. ⟨10.4028/p-00IvzN⟩ Autre publication scientifique hal-04725670v1

Pré-publication, Document de travail (1)

Structure and morphology evolution of concave-shaped SiC {0001} surfaces in liquid silicon Xinming Xing,Takeshi Yoshikawa,Didier Chaussende 2022 Pré-publication, Document de travail hal-03588441v1