Dominique Planson

Présentation

M. Dominique Planson

Téléphone : 04 72 43 87 24

Ingénieur INSA-GE, option Micro-électronique (91), DEA-DEI (91), Docteur INSA (1994)

Publications

Article dans une revue (164)

Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping Ndembi Ignoumba-Ignoumba,Camille Sonneville,Thomas Kaltsounis,Vishwajeet Maurya,Hala El Rammouzet al. Applied Physics Letters, 2026, 128 (12), ⟨10.1063/5.0325369⟩ Article dans une revue hal-05577908v1
Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Brenda Fosso-Sob,Dominique Planson,Pascal Bevilacqua,Camille Sonnevilleet al. Key Engineering Materials, 2025, 1021, pp.1-6. ⟨10.4028/p-T0Vjdb⟩ Article dans une revue hal-05293324v1
Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Pierre Brosselard,Mihai Lazaret al. Key Engineering Materials, 2025, 1023, pp.1-6. ⟨10.4028/p-0v5tyE⟩ Article dans une revue hal-05293312v1
Modified TCAD simulation approach for 4H-SiC JBS diode to investigate electron trapping effects Shikha Kumari,Pierre Brosselard,Dominique Planson,P. Vigneshwara Raja Microelectronics Reliability, 2025, 173, pp.115876. ⟨10.1016/j.microrel.2025.115876⟩ Article dans une revue hal-05196660v1
Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications Ndembi Ignoumba-Ignoumba,Camille Sonneville,Adrien Bidaud,Pierre Brosselard,Eric Frayssinetet al. Power Electronic Devices and Components, 2025, 11, pp.100100. ⟨10.1016/j.pedc.2025.100100⟩ Article dans une revue hal-05099383v1
New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations Vishwajeet Maurya,Daniel Alquier,Maroun Dagher,Camille Sonneville,Dominique Plansonet al. Materials Science in Semiconductor Processing, 2025, 198, pp.109681. ⟨10.1016/j.mssp.2025.109681⟩ Article dans une revue hal-05099324v1
Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viet Phung,Frédéric Richardeauet al. Solid State Phenomena, 2024, 358, pp.23-30. ⟨10.4028/p-pzTJ4o⟩ Article dans une revue hal-04697223v1
Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Camille Sonneville,Pierre Brosselardet al. Solid State Phenomena, 2024, 360, pp.119-125. ⟨10.4028/p-d65YuN⟩ Article dans une revue hal-04677706v1
A Novel Isolation Approach for GaN-Based Power Integrated Devices Zahraa Zaidan,Nedal Al Taradeh,Mohammed Benjelloun,Christophe Rodriguez,Ali Soltaniet al. Micromachines, 2024, 15 (10), pp.1223. ⟨10.3390/mi15101223⟩ Article dans une revue hal-04850893v1
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Camille Sonnevilleet al. Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩ Article dans une revue hal-04677726v1
Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results Dominique Planson,Dominique Tournier,Camille Sonneville,Pascal Bevilacqua,Luong Viet Phunget al. Materials Science in Semiconductor Processing, 2024, 178, pp.108444. ⟨10.1016/j.mssp.2024.108444⟩ Article dans une revue hal-04664143v1
Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩ Article dans une revue hal-04276812v1
Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes P. Vigneshwara Raja,Christophe Raynaud,Besar Asllani,Hervé Morel,Dominique Planson Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩ Article dans une revue hal-04199489v1
First results on 1.2 kV SiC MOSFET body diode robustness tests Hassan Hamad,Dominique Tournier,Jean-Michel Reynes,Olivier Perrotin,David Trémouilleset al. Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩ Article dans une revue hal-04282544v1
Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy Maroun Dagher,Camille Sonneville,Georges Bremond,Dominique Planson,Eric Frayssinetet al. Physica Status Solidi A (applications and materials science), 2023, ⟨10.1002/pssa.202200841⟩ Article dans une revue (article de synthèse) hal-04111725v1
Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode Atse Julien Eric N’dohi,Camille Sonneville,Soufiane Saidi,Thi Huong Ngo,Philippe de Mierryet al. Crystals, 2023, 13 (5), pp.713. ⟨10.3390/cryst13050713⟩ Article dans une revue hal-04099071v1
Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs Tamiris Grossl Bade,Hassan Hamad,Adrien Lambert,Hervé Morel,Dominique Planson Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩ Article dans une revue hal-04121028v1
Investigation of SiC thyristors with varying amplifying gate design Sigo Scharnholz,Ralf Hassdorf,Dirk Bauersfeld,Bertrand Vergne,Luong Viêt Phunget al. Materials Science Forum, 2022, 1062, pp.493-497. ⟨10.4028/p-ztr5d7⟩ Article dans une revue hal-03702384v1
Capacitance temperature dependence analysis of GaN-on-Si power transistors Florian Rigaud-Minet,Julien Buckley,William Vandendaele,Matthew Charles,Marie-Anne Jaudet al. Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩ Article dans une revue cea-03874112v1
Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja,Christophe Raynaud,Camille Sonneville,Hervé Morel,Luong Viet Phunget al. Micro and Nanostructures, 2022, 172, pp.207433. ⟨10.1016/j.micrna.2022.207433⟩ Article dans une revue hal-04032160v1
Edge terminations for 4H-SiC power devices: a critical issue Philippe Godignon,Josep Montserrat,José Rebollo,Dominique Planson Materials Science Forum, 2022, 1062, pp.570-575. ⟨10.4028/p-lom714⟩ Article dans une revue hal-03694757v1
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja,Christophe Raynaud,Camille Sonneville,Atse Julien Eric N’dohi,Hervé Morelet al. Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩ Article dans une revue hal-03826217v1
Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis Alina Muravitskaya,Anna Rumyantseva,Atse Julien Eric N’dohi,Camille Sonneville,Dominique Plansonet al. Materials Science Forum, 2022, 1062, pp.293-297. ⟨10.4028/p-5p0qg2⟩ Article dans une revue hal-03702821v1
4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Luong Viêt V Phung,Besar Asllaniet al. Materials Science Forum, 2022, 1062, pp.341-345. ⟨10.4028/p-2ch22f⟩ Article dans une revue hal-03689424v1
Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC) Camille Sonneville,Dominique Planson,Luong Viêt Phung,Pascal Bevilacqua,Besar Asllani Materials Science Forum, 2020, 1004, pp.290. ⟨10.4028/www.scientific.net/MSF.1004.290⟩ Article dans une revue hal-02925178v1
Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons Besar Asllani,Pascal Bevilacqua,Hervé Morel,Dominique Planson,Luong Viet Phunget al. Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩ Article dans une revue hal-02931290v1
Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode Teng Zhang,Christophe Raynaud,Dominique Planson Materials Science Forum, 2019, 963, pp.576-579. ⟨10.4028/www.scientific.net/MSF.963.576⟩ Article dans une revue hal-02436812v1
Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors Dominique Planson,Besar Asllani,Luong-Viet Phung,Pascal Bevilacqua,Hassan Hamadet al. Materials Science in Semiconductor Processing, 2019, 94, pp.116-127. ⟨10.1016/j.mssp.2019.01.042⟩ Article dans une revue hal-02053053v1
Subthreshold Drain current hysteresis of planar SiC MOSFETs Besar Asllani,Alberto Castellazzi,Dominique Planson,Hervé Morel Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩ Article dans une revue hal-02060341v1
Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes Besar Asllani,Dominique Planson,Pascal Bevilacqua,Jean-Baptiste Fonder,Beverley Choucoutouet al. Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩ Article dans une revue hal-02060334v1
10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization Besar Asllani,Hervé Morel,Luong Viêt Phung,Dominique Planson Energies, 2019, ⟨10.3390/en12234566⟩ Article dans une revue hal-02398585v1
High-Voltage SiC-JFET Fabrication and Full Characterization Besar Asllani,Pascal Bevilacqua,Abderrahime Zaoui,Gregory Grosset,Dominique Plansonet al. Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩ Article dans une revue hal-02060228v1
Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts Teng Zhang,Christophe Raynaud,Dominique Planson European Physical Journal: Applied Physics, 2019, 85 (1), pp.10102. ⟨10.1051/epjap/2018180282⟩ Article dans une revue hal-02047099v1
Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode Dominique Planson,Besar Asllani,Hassan Hamad,Marie-Laure Locatelli,R Arvinteet al. Materials Science Forum, 2018, Silicon Carbide and Related Materials 2017, 924, pp.577-580. ⟨10.4028/www.scientific.net/MSF.924.577⟩ Article dans une revue hal-01818806v1
VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs Besar Asllani,Asad Fayyaz,Alberto Castellazzi,Hervé Morel,Dominique Planson Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩ Article dans une revue hal-01889461v1
Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes Besar Asllani,Jean Baptiste Fonder,Pascal Bevilacqua,Dominique Planson,Luong Viet Phunget al. Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩ Article dans une revue hal-01857352v1
Silicon Carbide Technology of MESFET-Based Power Integrated Circuits Jean-François Mogniotte,Dominique Tournier,Christophe Raynaud,Mihai Lazar,Dominique Plansonet al. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2018, 6 (2), pp.539 - 548. ⟨10.1109/JESTPE.2017.2778002⟩ Article dans une revue hal-01864533v1
Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions Gabriel Ferro,Selsabil Sejil,Mihai Lazar,D. Carole,C. Brylinskiet al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600454⟩ Article dans une revue hal-01615190v1
Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections Julien Pezard,Véronique Soulière,Mihai Lazar,Naoufel Haddour,François Buretet al. Materials Science Forum, 2017, 897, pp.739 - 742. ⟨10.4028/www.scientific.net/MSF.897.739⟩ Article dans une revue hal-01644735v1
SiC integrated circuits for smart power converter J F Mogniotte,Mihai Lazar,Christophe Raynaud,Dominique Planson,B Allard Romanian Journal of Information Science and Technology, 2017, 20 (4), pp.385-399 Article dans une revue hal-04277111v1
Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation Junichi Hasegawa,Loris Pace,Luong Viet Phung,Mutsuko Hatano,Dominique Planson IEEE Transactions on Electron Devices, 2017, 64 (3), pp.1203-1208. ⟨10.1109/TED.2017.2657223⟩ Article dans une revue hal-01636430v1
OBIC Technique Applied to Wide Bandgap Semiconductors from 100 K up to 450 K Hassan Hamad,Dominique Planson,Christophe Raynaud,Pascal Bevilacqua Semiconductor Science and Technology, 2017, 32 (5), ⟨10.1088/1361-6641/aa641d/meta⟩ Article dans une revue hal-01865068v1
Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p&lt;sup&gt;++&lt;/sup&gt; Emitters Selsabil Sejil,Loïc Lalouat,Mihai Lazar,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩ Article dans une revue hal-01648360v1
Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications Thi Thanh Huyen Nguyen,Mihai Lazar,Jean-Louis Augé,Hervé Morel,Luong Viet Phunget al. Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩ Article dans une revue hal-01391838v1
A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Christophe Raynaudet al. IEEE Transactions on Electron Devices, 2016, 63 (6), pp.2462-2468. ⟨10.1109/TED.2016.2556725⟩ Article dans une revue hal-01387992v1
Optimization of VLS Growth Process for 4H-SiC P/N Junctions Selsabil Sejil,Mihai Lazar,Frédéric Cayrel,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩ Article dans une revue hal-01388031v1
Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti&lt;sub&gt;3&lt;/sub&gt;SiC&lt;sub&gt;2&lt;/sub&gt; Phase Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Christophe Raynaudet al. Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩ Article dans une revue hal-01388027v1
Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Sigo Scharnholz,Bertrand Vergneet al. Materials Science Forum, 2016, 858, pp.245 - 248. ⟨10.4028/www.scientific.net/MSF.858.245⟩ Article dans une revue hal-01388035v1
Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations Amira Souguir-Aouani,Nicolas Thierry-Jebali,Dominique Tournier,Arnaud Yvon,Emmanuel Collardet al. Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩ Article dans une revue hal-01857348v1
High termination efficiency using polyimide trench for high voltage diamond Schottky diode Houssam Arbess,Karine Isoird,Moustafa Zerarka,Henri Schneider,Marie-Laure Locatelliet al. Diamond and Related Materials, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩ Article dans une revue hal-01218796v1
Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing Tony Abi-Tannous,Maher Soueidan,G. Ferro,Mihai Lazar,B. Touryet al. Applied Surface Science, 2015, 347, pp.186 - 192. ⟨10.1016/j.apsusc.2015.04.077⟩ Article dans une revue istex hal-01391845v1
Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode Houssam Arbess,Karine Isoird,Saleem Hamady,Moustafa Zerarka,Dominique Planson IEEE Transactions on Electron Devices, 2015, 62 (9), pp. 2945-2951. ⟨10.1109/TED.2015.2456073⟩ Article dans une revue hal-01218835v1
Short-Circuit Capability Exploration of Silicon Carbide Devices Maxime Berthou,Dominique Planson,Dominique Tournier Materials Science Forum, 2015, 821-823, pp.810-813. ⟨10.4028/www.scientific.net/MSF.821-823.810⟩ Article dans une revue hal-02133674v1
Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature Thibaut Chailloux,Cyril Calvez,Dominique Tournier,Dominique Planson Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩ Article dans une revue hal-02116809v1
VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩ Article dans une revue hal-01387983v1
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Sigo Scharnholz,Dominique Planson Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩ Article dans une revue hal-01387987v1
2D Electric field imagery in 4H-SiC power diodes using OBIC technique Hassan Hamad,Pascal Bevilacqua,Dominique Planson,Christophe Raynaud,Dominique Tournieret al. European Physical Journal: Applied Physics, 2015, Electrical Engineering Symposium (SGE 2014), 72 (2), pp.20101. ⟨10.1051/epjap/2015150054⟩ Article dans une revue istex hal-01387989v1
The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing Mihai Lazar,Farah Laariedh,Pierre Cremillieu,Dominique Planson,Jean-Louis Leclercq Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.256 - 259. ⟨10.1016/j.nimb.2015.07.033⟩ Article dans une revue hal-01391844v1
A Study on the Chemistry of Epitaxial Ti&lt;sub&gt;3&lt;/sub&gt;SiC&lt;sub&gt;2&lt;/sub&gt; Formation on 4H-SiC Using Al-Ti Annealing Tony Abi-Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Berangère Touryet al. Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩ Article dans une revue hal-01391858v1
P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices Mihai Lazar,Selsabil Sejil,L. Lalouat,Christophe Raynaud,D. Caroleet al. Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342 Article dans une revue hal-01626119v1
4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes,Antonis Stavrinidis,George Konstantinidis,Maria Kayambaki,Konstantin Vamvoukakiset al. Materials Science Forum, 2015, 821-823, pp.793 - 796. ⟨10.4028/www.scientific.net/MSF.821-823.793⟩ Article dans une revue hal-01391852v1
Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode Pierre Brosselard,Florian Chevalier,Benjamin Proux,Nicolas Thierry-Jebali,Pascal Bevilacquaet al. Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩ Article dans une revue hal-02133670v1
Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts Nicolas Thierry-Jebali,Mihai Lazar,A. Vo-Ha,D. Carole,V. Soulièreet al. Materials Science Forum, 2014, Silicon Carbide and Related Materials 2013, ⟨10.4028/www.scientific.net/MSF.778-780.639⟩ Article dans une revue hal-01987147v1
SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices Thibaut Chailloux,Cyril Calvez,Nicolas Thierry Thierry-Jebali,Dominique Planson,Dominique Tournier Materials Science Forum, 2014, 778-780, pp.1122 - 1125. ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩ Article dans une revue hal-01628242v1
Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Dominique Tournier,Bertrand Vergneet al. Applied Physics Letters, 2014, 104 (8), ⟨10.1063/1.4866581⟩ Article dans une revue hal-01387924v1
Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport A. Vo-Ha,D. Carole,Mihai Lazar,Dominique Tournier,F. Cauwetet al. Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩ Article dans une revue istex hal-01627830v1
Die attach using silver sintering. Practical implementation and analysis Amandine Masson,Wissam Sabbah,Raphaël Riva,Cyril Buttay,Stephane Azzopardiet al. European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩ Article dans une revue hal-00874465v1
Pulse Current Characterization of SiC GTO Thyristors with Etched JTE Sigo Scharnholz,Ralf Hassdorf,Gontran Pâques,Bertrand Vergne,Dominique Planson Materials Science Forum, 2013, 740-742, pp.986 - 989. ⟨10.4028/www.scientific.net/MSF.740-742.986⟩ Article dans une revue hal-01627784v1
Towards Very High Voltage SiC Power Devices Dominique Planson,Pierre Brosselard,Dominique Tournier,Luong Viet Phung,Christian Brykinski ECS Transactions, 2013, 50 (3), pp.425-436. ⟨10.1149/05003.0425ecst⟩ Article dans une revue (article de synthèse) hal-04240149v1
3D TCAD Simulations for More Efficient SiC Power Devices Design Luong Viet Phung,Dominique Planson,Pierre Brosselard,Dominique Tournier,C. Brylinski ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩ Article dans une revue hal-01636483v1
Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport N. Thierry-Jebali,A. Vo-Ha,D. Carole,Mihai Lazar,Gabriel Ferroet al. Applied Physics Letters, 2013, 102 (21), ⟨10.1063/1.4809570⟩ Article dans une revue hal-01627796v1
Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET Florian Chevalier,Pierre Brosselard,Dominique Tournier,G. Grosset,L. Dupuyet al. Materials Science Forum, 2013, 740-742, pp.938-941. ⟨10.4028/www.scientific.net/MSF.740-742.938⟩ Article dans une revue hal-00803057v1
Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes Duy Minh Nguyen,Runhua Huang,Luong Viet Phung,Dominique Planson,Maxime Berthouet al. Materials Science Forum, 2013, 740-742, pp.609 - 612. ⟨10.4028/www.scientific.net/MSF.740-742.609⟩ Article dans une revue hal-01627801v1
Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport Davy Carole,Arthur Vo-Ha,Anthony Thomas,Mihai Lazar,Nicolas Thierry-Jebaliet al. Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩ Article dans une revue hal-00803058v1
p-Doped SiC Growth on Diamond Substrate by VLS Transport Arthur Vo Ha,Davy Carole,Mihai Lazar,Dominique Tournier,François Cauwetet al. Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩ Article dans une revue hal-01627777v1
Electrical Characterization of PiN Diodes with p&lt;sup&gt;+&lt;/sup&gt; Layer Selectively Grown by VLS Transport Nicolas Thierry-Jebali,Mihai Lazar,Arthur Vo Ha,Davy Carole,Véronique Soulièreet al. Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩ Article dans une revue hal-01627792v1
4H-SiC P&lt;sup&gt;+&lt;/sup&gt;N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes Stéphane Biondo,Laurent Ottaviani,Mihai Lazar,Dominique Planson,Julian Duchaineet al. Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩ Article dans une revue hal-02275699v1
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Gontran Pâques,Sigo Scharnholzet al. Materials Science Forum, 2012, 717-720, pp.545-548. ⟨10.4028/www.scientific.net/MSF.717-720.545⟩ Article dans une revue hal-00803059v1
Pulse Characterization of Optically Triggered SiC Thyristors Nicolas Dheilly,Gontran Pâques,Sigo Scharnholz,Dominique Planson Materials Science Forum, 2012, 717-720, pp.1179-1182. ⟨10.4028/www.scientific.net/MSF.717-720.1179⟩ Article dans une revue hal-02166420v1
Pressureless Silver Sintering Die-Attach for SiC Power Devices Stanislas Hascoët,Cyril Buttay,Dominique Planson,Rodica Chiriac,Amandine Masson Materials Science Forum, 2012, 740 - 742, pp.851-854. ⟨10.4028/www.scientific.net/MSF.740-742.851⟩ Article dans une revue hal-00799893v1
Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Olivier Palaiset al. Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩ Article dans une revue hal-04050522v1
Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC Farah Laariedh,Mihai Lazar,Pierre Cremillieu,Jean -Louis Leclercq,Dominique Planson Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩ Article dans une revue hal-04050541v1
600 V PiN diodes fabricated using on-axis 4H silicon carbide Gabriel Civrac,Farah Laariedh,Nicolas Thierry-Jebali,Mihai Lazar,Dominique Plansonet al. Materials Science Forum, 2012 Article dans une revue hal-02126341v1
SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements Mihai Lazar,François Jomard,Duy Minh M Nguyen,Christophe Raynaud,Gontran Pâqueset al. Materials Science Forum, 2012, 717-720, pp.885-888. ⟨10.4028/www.scientific.net/MSF.717-720.885⟩ Article dans une revue hal-02166414v1
4H-silicon carbide thin junction based ultraviolet photodetectors Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Vincent Le Borgneet al. Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩ Article dans une revue istex hal-00747356v1
Light triggered 4H-SiC thyristors with an etched guard ring assisted JTE Nicolas Dheilly,Dominique Planson,Gontran Pâques,Sigo Scharnholz Solid-State Electronics, 2012, 73, pp.32-36. ⟨10.1016/j.sse.2012.02.007⟩ Article dans une revue istex hal-00747348v1
Comparison of SiC Thyristors with Differently Etched JTEs Gontran Pâques,Sigo Scharnholz,Nicolas Dheilly,Dominique Planson,Rik W. de Doncker Materials Science Forum, 2012, 717-720, pp.1167 - 1170. ⟨10.4028/www.scientific.net/MSF.717-720.1167⟩ Article dans une revue hal-01627763v1
Parallel and serial association of SiC light triggered thyristors Nicolas Dheilly,Gontran Pâques,Sigo Scharnholz,Dominique Planson Materials Science Forum, 2012, 711, pp.129-133. ⟨10.4028/www.scientific.net/MSF.711.129⟩ Article dans une revue hal-00661512v1
State of the art of high temperature power electronics Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacquaet al. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩ Article dans une revue istex hal-00597432v1
Diode Schottky sur diamant CVD. Simulation, réalisation technologique et étude de protection périphérique Sojan Koné,Hui Ding,Fabien Thion,Henri Schneider,Karine Isoirdet al. European Journal of Electrical Engineering, 2011, 14 (5), pp.553 - 567. ⟨10.3166/ejee.14.553-567⟩ Article dans une revue hal-01627761v1
Perspectives on SiC and III-N Based Devices for Power Electronics Christian Brylinski,Dominique Planson ECS Transactions, 2011, 41 (8), pp.139-152. ⟨10.1149/1.3631492⟩ Article dans une revue hal-04240508v1
Simulation and design of junction termination structures for diamond Schottky diodes Fabien Thion,Karine Isoird,Dominique Planson,Marie-Laure Locatelli,Hui Ding Diamond and Related Materials, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩ Article dans une revue hal-00661491v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩ Article dans une revue hal-00799902v1
Optical triggering of SiC thyristors using UV LEDs Nicolas Dheilly,Gontran Pâques,Sigo Scharnholz,Pascal Bevilacqua,Christophe Raynaudet al. Electronics Letters, 2011, 47 (7), pp.459 - 460. ⟨10.1049/el.2010.7041⟩ Article dans une revue hal-00661435v1
High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension Gontran Pâques,Sigo Scharnholz,Nicolas Dheilly,Dominique Planson,Rik W. de Doncker IEEE Electron Device Letters, 2011, 32 (10), pp.1421 - 1423. ⟨10.1109/LED.2011.2163055⟩ Article dans une revue hal-00661495v1
Optical triggering of 4H-SiC thyristors with a 365 nm UV LED Nicolas Dheilly,Gontran Pâques,Dominique Planson,Pascal Bevilacqua,Sigo Scharnholz Materials Science Forum, 2011, 679-680, pp.690-693. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩ Article dans une revue hal-00661458v1
Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height Gontran Pâques,Sigo Scharnholz,Jens-Peter Konrath,Nicolas Dheilly,Dominique Plansonet al. Materials Science Forum, 2011, 679-680, pp.473-476. ⟨10.4028/www.scientific.net/MSF.679-680.473⟩ Article dans une revue hal-00661475v1
Characterization and VHDL-AMS modeling of SiC-JFET transistor Rami Mousa,Dominique Planson,Hervé Morel European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩ Article dans une revue istex hal-00747438v1
Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State Mihai Lazar,Fabrice Enoch,Farah Laariedh,Dominique Planson,Pierre Brosselard Materials Science Forum, 2011, 679-680, pp.477-480. ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ Article dans une revue hal-04343373v1
Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier Maxime Berthou,Philippe Godignon,Josep Montserrat,José Millán,Dominique Planson Journal of Electronic Materials, 2011, 40 (12), pp.2355 - 2362. ⟨10.1007/s11664-011-1774-y⟩ Article dans une revue istex hal-01627572v1
Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection Duy Minh Nguyen,Gontran Pâques,Nicolas Dheilly,Christophe Raynaud,Dominique Tournieret al. Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩ Article dans une revue hal-02168909v1
Experimental determination of impact ionization coefficients in 4H-SiC Duy Minh Nguyen,Christophe Raynaud,Nicolas Dheilly,Mihai Lazar,Dominique Tournieret al. Diamond and Related Materials, 2011, 20 (3), pp.395-397. ⟨10.1016/j.diamond.2011.01.039⟩ Article dans une revue istex hal-00661429v1
Graded Etched Junction Termination for SiC Thyristors Gontran Pâques,Nicolas Dheilly,Dominique Planson,Rik W. de Doncker,Sigo Scharnholz Materials Science Forum, 2011, 679-680, pp.457-460. ⟨10.4028/www.scientific.net/MSF.679-680.457⟩ Article dans une revue hal-00661479v1
Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices Christophe Raynaud,Dominique Tournier,Hervé Morel,Dominique Planson Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩ Article dans une revue hal-02186368v1
Extreme dielectric strength in boron doped homoepitaxial diamond Pierre-Nicolas Volpe,Pierre Muret,Julien Pernot,Franck Omnès,Tokuyuki Terajiet al. Applied Physics Letters, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩ Article dans une revue hal-00734714v1
High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer Pierre-Nicolas Volpe,Pierre Muret,Julien Pernot,Franck Omnès,Tokuyuki Terajiet al. Physica Status Solidi A (applications and materials science), 2010, 207 (9), pp.2088-2092. ⟨10.1002/pssa.201000055⟩ Article dans une revue istex hal-00739492v1
A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT Dominique Tournier,Pascal Bevilacqua,Pierre Brosselard,Dominique Planson Materials Science Forum, 2010, 645-648, pp.1155-1158. ⟨10.4028/WWW.scientific.net/MSF.645-648.1155⟩ Article dans une revue hal-02168907v1
Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage Sombel Diaham,Marie-Laure Locatelli,Thierry Lebey,Christophe Raynaud,Mihai Lazaret al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.695-698. ⟨10.4028/www.scientific.net/MSF.615-617.695⟩ Article dans une revue hal-04368204v1
Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique Nicolas Dheilly,Dominique Planson,Pierre Brosselard,Jawad Ul Hassan,Pascal Bevilacquaet al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ Article dans une revue hal-04368136v1
High Power Density SiC 450A AccuMOSFET for Current Limiting Applications Dominique Tournier,Pascal Bevilacqua,Dominique Planson,Hervé Morel,Pierre Brosselardet al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩ Article dans une revue hal-04368124v1
Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses Christophe Raynaud,Duy Minh Nguyen,Pierre Brosselard,Amador Pérez-Tomás,Dominique Plansonet al. Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩ Article dans une revue hal-00391462v1
Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) Pierre Lefranc,Dominique Planson,Hervé Morel,Dominique Bergogne Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩ Article dans une revue istex hal-00476201v1
Process Optimization for High Temperature SiC Lateral Devices Maher Soueidan,Mihai Lazar,Duy Minh Nguyen,Dominique Tournier,Christophe Raynaudet al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.585-588. ⟨10.4028/www.scientific.net/MSF.615-617.585⟩ Article dans une revue hal-04368215v1
Optical beam induced current measurements: principles and applications to SiC device characterization Christophe Raynaud,Duy Minh Nguyen,Nicolas Dheilly,Dominique Tournier,Pierre Brosselardet al. Physica Status Solidi A (applications and materials science), 2009, 206 (10), pp.2273-2283. ⟨10.1002/pssa.200825183⟩ Article dans une revue istex hal-00398971v1
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diode Heu Vang,Sigo Scharnholz,Christophe Raynaud,Mihai Lazar,Gontran Pâqueset al. Materials Science Forum, 2008, MATERIALS SCIENCE FORUM, 600-603, pp.1011-1014. ⟨10.4028/www.scientific.net/MSF.600-603.1011⟩ Article dans une revue hal-04368150v1
Comparison of Electrical Properties of Ohmic Contact Realized on p-type 4H-SiC Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Heu Vang,Dominique Planson Materials Science Forum, 2008, Materials Science Forum, 600-603, pp.639-642. ⟨10.4028/www.scientific.net/MSF.600-603.639⟩ Article dans une revue hal-00391560v1
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah,Damien Risaletto,Christophe Raynaud,Kamel Besbes,Dominique Bergogneet al. Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Article dans une revue hal-04452237v1
OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes Christophe Raynaud,Daniel Loup,Phillippe Godignon,Raul Perez Rodriguez,Dominique Tournieret al. Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.1007-1010. ⟨10.4028/www.scientific.net/MSF.556-557.1007⟩ Article dans une revue hal-04369314v1
1.2 kV pin diodes with SiCrystal epiwafer Heu Vang,Christophe Raynaud,Pierre Brosselard,Mihai Lazar,Pierre Cremillieuet al. Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.901-904. ⟨10.4028/www.scientific.net/MSF.556-557.901⟩ Article dans une revue hal-04369138v1
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Erwan Oliviero,Mihai Lazar,Heu Vang,Christiane Dubois,Pierre Cremillieuet al. Materials Science Forum, 2007, MATERIALS SCIENCE FORUM, 556-557, pp.611-614. ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ Article dans une revue hal-04369331v1
Current sensing for SiC Power Devices D. Tournier,Miquel Vellvehi,Philippe Godignon,Josep Montserrat,Dominique Plansonet al. Materials Science Forum, 2006, MATERIALS SCIENCE FORUM, 527-529, pp.1215-1218. ⟨10.4028/www.scientific.net/MSF.527-529.1215⟩ Article dans une revue hal-04369348v1
Composants de puissance en SiC. Etat de l'art Dominique Planson,Christophe Raynaud,Pierre Brosselard,Dominique Bergogne,Mihai Lazaret al. European Journal of Electrical Engineering, 2006, 9 (4-5), pp.595-611 Article dans une revue hal-04371563v1
Deep SiC etching with RIE Mihai Lazar,Heu Vang,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. Superlattices and Microstructures, 2006, 40 (4-6), pp.388-392. ⟨10.1016/j.spmi.2006.06.015⟩ Article dans une revue hal-00179458v1
Ni-Al ohmic contact to p-type 4H-SiC Heu Vang,Mihai Lazar,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. Superlattices and Microstructures, 2006, 40 (4-6), pp.626-631 Article dans une revue hal-00141426v1
P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar,Christophe Jacquier,Christiane Dubois,Christophe Raynaud,Gabriel Ferroet al. Materials Science Forum, 2005, 483-485, pp.633-636. ⟨10.4028/www.scientific.net/MSF.483-485.633⟩ Article dans une revue hal-04362494v1
A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery Pierre Brosselard,Thierry Bouchet,Dominique Planson,Sigo Scharnholz,Gontran Pâqueset al. Materials Science Forum, 2005, 483-485, pp.1005-1008. ⟨10.4028/www.scientific.net/MSF.483-485.1005⟩ Article dans une revue hal-04345858v1
Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement Bruno Allard,Gérard Coquery,Laurent Dupont,Zoubir Khatir,Mihai Lazaret al. Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩ Article dans une revue hal-01702019v1
Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination Gheorghe Brezeanu,Phillippe Godignon,E. Dimitrova,Christophe Raynaud,Dominique Plansonet al. Materials Science Forum, 2004, 457-460, pp.1495-1498. ⟨10.4028/www.scientific.net/MSF.457-460.1495⟩ Article dans une revue hal-04093364v1
On-Chip Temperature Monitoring of a SiC Current Limiter Dominique Tournier,Phillippe Godignon,José Millan,Dominique Planson,Jean-Pierre Chanteet al. Materials Science Forum, 2004, 457-460, pp.1021-1024. ⟨10.4028/www.scientific.net/MSF.457-460.1021⟩ Article dans une revue hal-02966528v1
OBIC analysis for 1.3 kV 6H-SiC p(+)n planar bipolar diodes protected by Junction Termination Extension Christophe Raynaud,S. Wang,Dominique Planson,Mihai Lazar,Jean-Pierre Chante Diamond and Related Materials, 2004, 13 (9), pp.1697-1703 Article dans une revue hal-00140107v1
Influence of Different Peripheral Protections on the Breakover Voltage of a 4H-SiC GTO Thyristor Pierre Brosselard,Volker Zorngiebel,Dominique Planson,Sigo Scharnholz,Jean-Pierre Chanteet al. Materials Science Forum, 2004, 457-460, pp.1129-1132. ⟨10.4028/www.scientific.net/MSF.457-460.1129⟩ Article dans une revue hal-04092535v1
The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Mihai Lazar,G.C. Cardinali,Christophe Raynaud,Antonella Poggi,Dominique Plansonet al. Materials Science Forum, 2004, 457-460, pp.1025-1028. ⟨10.4028/www.scientific.net/MSF.457-460.1025⟩ Article dans une revue hal-04345830v1
Optimal layout for 6H-SiC VJFET controlled current limiting device Dominique Tournier,Xavier Jordà,Philippe Godignon,Dominique Planson,Jean-Pierre Chanteet al. Diamond and Related Materials, 2003, 12 (3-7), pp.1220-1223 Article dans une revue hal-00140113v1
Fabrication and Characterisation of High Voltage SiC-Thyristors Volker Zorngiebel,Sigo Scharnholz,Emil Spahn,Pierre Brosselard,N. Arssiet al. Materials Science Forum, 2003, 433-436, pp.883-886. ⟨10.4028/www.scientific.net/MSF.433-436.883⟩ Article dans une revue hal-02489305v1
A 4H-SiC high-power-density VJFET as controlled current limiter Dominique Tournier,Philippe Godignon,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. IEEE Transactions on Industry Applications, 2003, 39 (5), pp.1508-1513 Article dans une revue hal-00140109v1
Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. Materials Science Forum, 2003, 433-436, pp.871-874. ⟨10.4028/www.scientific.net/MSF.433-436.871⟩ Article dans une revue hal-02458100v1
Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers Mihai Lazar,Christophe Raynaud,Dominique Planson,Jean-Pierre Chante,Marie-Laure Locatelliet al. Journal of Applied Physics, 2003, 94 (5), pp.2992-2998 Article dans une revue hal-00140110v1
SiC Power Devices on QUASIC and SiCOI Smart-Cut&lt;sup&gt;®&lt;/sup&gt; Substrates: First Demonstrations Fabrice Letertre,N. Daval,Francois Templier,Edwige Bano,Dominique Plansonet al. Materials Science Forum, 2003, 433-436, pp.813-818. ⟨10.4028/www.scientific.net/MSF.433-436.813⟩ Article dans une revue hal-04091219v1
OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension S.R. Wang,Christophe Raynaud,Dominique Planson,Mihai Lazar,Jean-Pierre Chante Materials Science Forum, 2003, 433-436, pp.863-866. ⟨10.4028/www.scientific.net/MSF.433-436.863⟩ Article dans une revue hal-04091213v1
Realization of a High-Current and Low R&lt;sub&gt;ON&lt;/sub&gt; 600V Current-Limiting Device F. Nallet,Phillippe Godignon,Dominique Planson,Christophe Raynaud,Jean-Pierre P Chante Materials Science Forum, 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩ Article dans une revue hal-02151717v1
Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization K. Isoird,Mihai Lazar,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. Materials Science Forum, 2002, 389-393, pp.1289-1292. ⟨10.4028/www.scientific.net/MSF.389-393.1289⟩ Article dans une revue hal-02151720v1
Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Jean-Pierre P Chanteet al. Materials Science Forum, 2002, 389-393, pp.1243-1246. ⟨10.4028/www.scientific.net/MSF.389-393.1243⟩ Article dans une revue hal-02151713v1
Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments Laurent Ottaviani,Mihai Lazar,Marie-Laure Locatelli,Dominique Planson,Jean-Pierre Chanteet al. Materials Science and Engineering: B, 2002, 90 (3), pp.301-308. ⟨10.1016/S0921-5107(02)00002-8⟩ Article dans une revue istex hal-00140116v1
Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Jean-Pierre P Chanteet al. Materials Science Forum, 2002, 389-393, pp.1403-1406. ⟨10.4028/www.scientific.net/MSF.389-393.1403⟩ Article dans une revue hal-02151712v1
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Mihai Lazar,Christophe Raynaud,Dominique Planson,Marie-Laure Locatelli,K. Isoirdet al. Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩ Article dans une revue hal-02151714v1
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩ Article dans une revue hal-02151710v1
Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird,Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. Applied Surface Science, 2001, 184 (1-4), pp.477-482. ⟨10.1016/S0169-4332(01)00537-2⟩ Article dans une revue istex hal-00140118v1
Experimental characterization of a 4H-SiC high voltage current limiting device F. Nallet,Dominique Planson,Philippe Godignon,Marie-Laure Locatelli,Mihai Lazaret al. Applied Surface Science, 2001, 184 (1-4), pp.404-407 Article dans une revue hal-00140117v1
Improved Annealing Process for 6H-SiC p&lt;sup&gt;+&lt;/sup&gt;-n Junction Creation by Al Implantation Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Dominique Planson,Bruno Canutet al. Materials Science Forum, 2000, 338-342, pp.921-924. ⟨10.4028/www.scientific.net/MSF.338-342.921⟩ Article dans une revue hal-02275720v1
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy N. S. Savkina,A. A. Lebedev,D. V. Davydov,A. M. Strel'Chuk,A. S. Tregubovaet al. Materials Science and Engineering: B, 2000, 77 (1), pp.50-54 Article dans une revue hal-00140585v1
Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation Karine Isoird,Laurent Ottaviani,Marie-Laure Locatelli,Dominique Planson,Christophe Raynaudet al. Materials Science Forum, 2000, 338-342, pp.1363-1366. ⟨10.4028/www.scientific.net/MSF.338-342.1363⟩ Article dans une revue hal-02281030v1
Electrical characterisation of MNOS devices on p-type 6H-SiC S. Berberich,Philippe Godignon,José del R. Millán,Dominique Planson,H. Hartnagelet al. Diamond and Related Materials, 1999, 8 (2-5), pp.305-308 Article dans une revue hal-00141547v1
Design of a 600 V silicon carbide vertical power MOSFET Dominique Planson,Marie-Laure Locatelli,F. Lanois,Jean-Pierre Chante Materials Science and Engineering: B, 1999, 61 (2), pp.497-501 Article dans une revue hal-00141536v1
Aluminum multiple implantations in 6H–SiC at 300 K Laurent Ottaviani,Erwan Morvan,Marie-Laure Locatelli,Dominique Planson,Philippe Godignonet al. Solid-State Electronics, 1999, 43 (12), pp.2215-2223. ⟨10.1016/S0038-1101(99)00199-9⟩ Article dans une revue istex hal-03727987v1
P-N Junction creation in 6H-SiC by aluminum implantation Laurent Ottaviani,Marie-Laure Locatelli,Dominique Planson,Karine Isoird,Jean-Pierre Chanteet al. Materials Science and Engineering: B, 1999, 61 (2), pp.424-428 Article dans une revue hal-00141527v1
Metal-Nitride-Semiconductor Capacitors on 6H-SiC Stefan Berberich,Phillippe Godignon,José Millan,Dominique Planson,H.L. Hartnagelet al. Materials Science Forum, 1998, 264-268, pp.881-884. ⟨10.4028/www.scientific.net/MSF.264-268.881⟩ Article dans une revue hal-03728071v1
Post-Implantation Annealing of Aluminium in 6H-SiC Laurent Ottaviani,Dominique Planson,Marie-Laure Locatelli,Jean-Pierre Chante,B. Canutet al. Materials Science Forum, 1998, 264-268, pp.709-712. ⟨10.4028/www.scientific.net/MSF.264-268.709⟩ Article dans une revue hal-02281029v1
Comparison between Aluminium and Boron-Doped Junction Termination Extensions for high Voltage 6H-SiC Planar Bipolar Diodes S. Ortolland,Marie-Laure Locatelli,Dominique Planson,Jean-Pierre Chante,A. Senes Materials Science Forum, 1998, 264-268, pp.1045-1048. ⟨10.4028/www.scientific.net/MSF.264-268.1045⟩ Article dans une revue hal-04691862v1
Les composants de puissance : état de l'art, les évolutions Jean-Pierre Chante,Bruno Allard,Dominique Bergogne,Francis Calmon,René Elhingeret al. Revue Internationale de Génie Electrique, RIGE, 1998 Article dans une revue hal-02117240v1
Damage annealing and dopant activation in Al ion implanted alpha-SiC B. Canut,S. Ramos,J. Roger,Jean-Pierre Chante,Marie-Laure Locatelliet al. Materials Science and Engineering: B, 1997, 46 (1-3), pp.267-270. ⟨10.1016/S0921-5107(96)01986-1⟩ Article dans une revue istex hal-00141605v1
Periphery protection for silicon carbide devices: State of the art and simulation Dominique Planson,Marie-Laure Locatelli,S. Ortolland,Jean-Pierre Chante,H. Mitlehneret al. Materials Science and Engineering: B, 1997, 46 (1-3), pp.210-217 Article dans une revue hal-00141603v1
Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures A. A. Lebedev,S. Ortolland,Christophe Raynaud,Marie-Laure Locatelli,Dominique Plansonet al. Semiconductors, 1997, 31 (7), pp.735-737 Article dans une revue hal-00141601v1
The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC A A Lebedev,A M Strel'Chuk,S. Ortolland,C Raynaud,Marie-Laure Locatelliet al. Institute of Physics Conference Series, 1996 Article dans une revue hal-02423361v1
Angle etch control for silicon carbide power devices F. Lanois,P. Lassagne,Dominique Planson,Marie-Laure Locatelli Applied Physics Letters, 1996, 69 (2), pp.236-238 Article dans une revue hal-00141623v1

Communication dans un congrès (217)

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Raman and photoluminescence characterization of β-Ga2O3 for power electronic application Enora Vuillermet,Camille Sonneville,Changzi Lu,Pierre Brosselard,Jean-Marie Bluetet al. WORKSHOP ON GALLIUM OXIDE AND RELATED MATERIALS, Sep 2025, Grenoble, France Communication dans un congrès hal-05317962v1
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Peripheral defects related to processing technique in GaN-on-GaN vertical devices M Dagher,G Brémond,Camille Sonneville,Dominique Planson,H Haaset al. Workshop on Nitride Semiconductors IWN 2024, Nov 2024, O'ahu (Honolulu), United States Communication dans un congrès hal-04855750v1
Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Brenda Fosso-Sob,Dominique Planson,Pascal Bevilacqua,Camille Sonnevilleet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 Communication dans un congrès hal-04677764v1
Repetitive Short-circuits on 650 V GaN Adrien Lambert,Hervé Morel,Dominique Planson,Luong Viêt Phung,Dominique Tournieret al. PCIM Europe 2024, Jun 2024, Nuremberg, Germany Communication dans un congrès hal-04626451v1
Carrier density analysis in stressed n-doped GaN layers on sapphire Ndembi Ignoumba-Ignoumba,Camille Sonneville,Éric Frayssinet,Adrien Bidaud,Florian Bartoliet al. GaN Marathon, Jun 2024, Vérone, Italy Communication dans un congrès hal-04639487v1
Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices M Dagher,Camille Sonneville,Dominique Planson,V Maurya,J Buckleyet al. e-MRS Fall Meeting, Sep 2024, Varsovie (Warsaw), Poland Communication dans un congrès hal-04855745v1
Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Pierre Brosselard,Mihai Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 Communication dans un congrès hal-04680725v1
Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V Adrien Lambert,Hervé Morel,D. Tournier,Dominique Planson,Luong Viêt Phunget al. 5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France Communication dans un congrès hal-04150168v1
Caractérisation dynamique de thyristors SiC avec gâchette amplificatrice Sigo Scharnholz,Kamil Kotra,Ralf Hassdorf,Luong Viêt Phung,Dominique Planson 5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France Communication dans un congrès hal-04401362v1
Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viêt Phung,Frédéric Richardeauet al. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04221605v1
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Dominique Planson,D. Tournier,Pascal Bevilacqua,Camille Sonnevilleet al. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04222211v1
Application of the Double Source Switching Test to GaN HEMTs Tamiris Grossl Bade,Maroun Alam,Hervé Morel,Dominique Planson 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩ Communication dans un congrès hal-04225311v1
Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics Hervé Morel,Maroun Alam,Pascal Bevilacqua,D. Tournier,Dominique Planson Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France Communication dans un congrès hal-04224402v1
Vertical pin diodes on large freestanding (100) diamond film M.A. Pinault-Thaury,Mohamed Bouras,Rémi Gillet,Ingrid Stenger,François Jomardet al. 2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France Communication dans un congrès hal-04219862v1
Visualization of P$^+$ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique Dominique Planson,D. Tournier,Pascal Bevilacqua,Camille Sonneville,Pierre Brosselardet al. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04218429v1
First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests Hassan Hamad,Dominique Tournier,Jean-Michel Reynes,Olivier Perrotin,Régis Meuretet al. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France Communication dans un congrès hal-04240602v1
Emerging trends in OBIC characterization technique for Wide Bandgap semiconductor devices Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Dominique Tournier International Semiconductor Conference (CAS-2023), IMT Bucharest, Oct 2023, Sinaia, Romania. pp.3-10, ⟨10.1109/CAS59036.2023.10303647⟩ Communication dans un congrès hal-04238355v1
Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viet Phung,M. Lazaret al. 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩ Communication dans un congrès hal-04203163v1
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration Ralph Makhoul,Abdelhakim Bourennane,Luong Viêt Phung,Frédéric Richardeau,Mihai Lazaret al. IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩ Communication dans un congrès hal-04147862v1
Micro-Raman characterization of vertical GaN Schottky and PN diodes Camille Sonneville,Vishwajeet Maurya,Maroun Dagher,Adam Mohamed Kaywah,Eric Frayssinetet al. 46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy Communication dans un congrès hal-04170420v1
Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices Zahraa Zaidan,Nedal Al Taradeh,Christophe Rodriguez,Abdelatif Jaouad,Ali Soltaniet al. Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco Communication dans un congrès hal-03946187v1
Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes P Vigneshwara Raja,Christophe Raynaud,Besar Asllani,Herve Morel,Dominique Planson International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India Communication dans un congrès hal-03990840v1
Design of a test package for high voltage SiC diodes Arthur Boutry,Bruno Lefebvre,Cyril Buttay,Eric Vagnon,Dominique Plansonet al. Proceedings of the International Workshop on Integrated Power Packaging (IWIPP 2022), Aug 2022, Grenoble, France. ⟨10.1109/IWIPP50752.2022.9894223⟩ Communication dans un congrès hal-03772006v1
Dynamic characterization of SiC thyristors with amplifying gate design K Kotra,S Scharnholz,R Hassdorf,L V Phung,Dominique Planson E-MRS 2022 Fall Meeting, Sep 2022, Varsovie, Poland Communication dans un congrès hal-04011099v1
Trapping effects in High-Power 4H-Silicon Carbide (4H-SiC) Bipolar PiN Rectifiers P Vigneshwara Raja,Besar Asllani,Christophe Raynaud,Hervé Morel,Luong Viet Phunget al. 6th IEEE International Conference on Emerging Electronics (ICEE 2022), IEEE, Dec 2022, Bangalore, India Communication dans un congrès hal-04011039v1
Multiphysics Characterizations of Vertical GaN Schottky Diodes Atse Julien Eric N’dohi,Camille Sonneville,Soufiane Saidi,Thi Huong Ngo,P. de Mierryet al. 2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩ Communication dans un congrès hal-03844585v1
Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky Camille Sonneville,Atse Julien Eric N’dohi,S Saidi,T H Ngo,P. de Mierryet al. Conférence Internationale Matériaux, Oct 2022, Lille, France Communication dans un congrès hal-03844887v1
Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses Maroun Alam,Hervé Morel,Luong Viêt Phung,Dominique Planson,A. Yvon 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩ Communication dans un congrès hal-03887865v1
Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling Florian Rigaud-Minet,Julien Buckley,William Vandendaele,Stéphane Becu,Matthew Charleset al. SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan Communication dans un congrès cea-03875079v1
Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ Communication dans un congrès hal-03856578v1
Electrical behavior of vertical Schottky diodes on GaN homoepitaxy M Dagher,Camille Sonneville,Georges Bremond,Dominique Planson,Yvon Cordieret al. IWN 2022 - International Workshop on Nitride Semiconductors, Oct 2022, Berlin, Germany Communication dans un congrès hal-03854620v1
Enhanced Resonant Raman scattering of GaN functional layers using Al thin films -a versatile tool for multilayer structure analysis Alina Muravitskaya,Anna Rumyantseva,Atse Julien Eric N’dohi,Camille Sonneville,Dominique Plansonet al. ECSCRM2020-2021, Oct 2021, Tours, France Communication dans un congrès hal-03410757v1
MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES Atse Julien Eric N’dohi,Camille Sonneville,Soufiane Saidi,Thi Huong Ngo,P. de Mierryet al. POWER 2021 (IMAPS), Nov 2021, Tours, France Communication dans un congrès hal-03676940v1
High voltage (6kV) diamond TMBS diode design Ralph Makhoul,Karine Isoird,Luong Viet Phung,Dominique Planson 31st International Conference On Diamond and Carbon Materials, Sep 2021, Palma, Mallorca, Spain Communication dans un congrès hal-03715580v1
Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications Joao Oliveira,Ali Alhoussen,Florent Loiselay,Hervé Morel,Dominique Planson EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩ Communication dans un congrès hal-03260519v1
Edge terminations for 4H-SiC power devices: a critical issue P Godignon,J Montserrat,J Rebollo,Dominique Planson ECSCRM 2020-2021, Oct 2021, Tours, France Communication dans un congrès hal-03418183v1
Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications Atse Julien Eric N’dohi,Camille Sonneville,Thi Huong Ngo,P. de Mierry,Éric Frayssinetet al. EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom Communication dans un congrès hal-03676503v1
4H-SiC PiN diode protected by narrow field rings investigated by the micro-OBIC method Dominique Planson,C Sonneville,Pascal Bevilacqua,L V Phung,B Asllaniet al. ECSCRM 2020-2021, Oct 2021, Tours, France Communication dans un congrès hal-03410274v1
Conception de diodes TMBS haute tension (6kV) en diamant Ralph Makhoul,Karine Isoird,Luong Viet Phung,Dominique Planson SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France Communication dans un congrès hal-03355128v1
Investigation of SiC thyristors with varying amplifying gate design S Scharnholz,R Hassdorf,D Bauersfeld,B Vergne,Luong Viêt Phunget al. European Conference on Silicon Carbide and Related Materials (ECSCRM2020) 2021, Oct 2021, Tours, France Communication dans un congrès hal-03410752v1
Analysis of Parasitic Elements in Power Modules Based on GaN Components Joao Oliveira,Hervé Morel,Dominique Planson,Florent Loiselay PCIM Europe 2020, Jul 2020, Nuremberg, Germany Communication dans un congrès hal-02945892v1
Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor Besar Asllani,Hervé Morel,Pascal Bevilacqua,Dominique Planson EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩ Communication dans un congrès hal-02945919v1
Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs Joao Oliveira,Florent Loiselay,Hervé Morel,Dominique Planson EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩ Communication dans un congrès hal-02945913v1
Static characteristics of 5 kV SiC BJTs and Darlington’s Besar Asllani,Dominique Planson,Hervé Morel,T Lagier International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan Communication dans un congrès hal-02428513v1
V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate Besar Asllani,Alberto Castellazzi,Oriol Aviño Salvado,Asad Fayyaz,Hervé Morelet al. IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩ Communication dans un congrès hal-02099781v1
Interest of using a micro-meter spatial resolution to study SiC semi-conductor devices by Optical Beam Induced Current (OBIC) Camille Sonneville,Dominique Planson,Luong Viêt Phung,Pascal Bevilacqua,Besar Asllani International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. pp.Mo-P-23 Communication dans un congrès hal-02428502v1
Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices Camille Sonneville,Dominique Planson,Luong Viêt Phung,Besar Asllani,Pascal Bevilacqua Workshop on Compound Semiconductor Devices and Integrated Circuits 2019 (WOCSDICE 2019), Jun 2019, Cabourg, France Communication dans un congrès hal-02164000v1
SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation Besar Asllani,Hervé Morel,Dominique Planson,Asad Fayyaz,Alberto Castellazzi ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩ Communication dans un congrès hal-01984359v1
Experimental and simulation results of OBIC Technique Applied to Wide Bandgap Semiconductors Dominique Planson,Luong-Viet Phung,Besar Asllani,Pascal Bevilacqua,Hassan Hamadet al. e-MRS Fall Meeting, Sep 2018, Varsovie, Poland Communication dans un congrès hal-02116919v1
Multi-barrier height characterization and DLTS study on Ti/W 4H-SiC Schottky Diode Teng Zhang,Christophe Raynaud,Dominique Planson ECSCRM'18, Sep 2018, Birmingham, United Kingdom Communication dans un congrès hal-02004837v1
Towards SiC thyristors with amplifying gate design Ralf Hassdorf,Sigo Scharnholz,Dirk Bauersfeld,Bertrand Vergne,Luong Viêt Phunget al. Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France Communication dans un congrès hal-02983373v1
Subthreshold Drain current hysteresis of planar SiC MOSFETs Besar Asllani,A Castellazzi,Dominique Planson,Hervé Morel ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04 Communication dans un congrès hal-02428531v1
Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes Besar Asllani,Dominique Planson,Pascal Bevilacqua,J B Fonder,B Choucoutouet al. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2 Communication dans un congrès hal-01985994v1
Mesure et analyse de la hauteur de barrière des contacts Schottky Mo sur SiC-4H Teng Zhang,Christophe Raynaud,Dominique Planson Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France Communication dans un congrès hal-02983328v1
Conception and high temperature characterization of 10 kV 50 A 4H-SiC PiN diodes B Choucoutou,Besar Asllani,L V Phung,J B Fonder,Dominnique Tournieret al. European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom Communication dans un congrès hal-02004841v1
SiC lateral Schottky diode technology for integrated smart power converter Jean-François Mogniotte,Christophe Raynaud,Mihai Lazar,Bruno Allard,Dominique Planson 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352287⟩ Communication dans un congrès hal-01864545v1
High-Voltage SiC-JFET Fabrication and Full Characterization Besar Asllani,Pascal Bevilacqua,A. Zaoui,G Grosset,Dominique Plansonet al. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5 Communication dans un congrès hal-02428523v1
Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes Besar Asllani,J B Fonder,Pascal Bevilacqua,Dominique Planson,L. Phunget al. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States Communication dans un congrès hal-02132576v1
Emergence of SiC Thyristors Featuring Amplifying Gate Design Ralf Hassdorf,Sigo Scharnholz,Dirk Bauersfeld,Bertrand Vergne,Luong Viêt Phunget al. International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States Communication dans un congrès hal-02004843v1
Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode Dominique Planson,Besar Asllani,Hassan Hamad,Marie-Laure Locatelli,Lumei Weiet al. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington, United States. pp.TH.DP.4 Communication dans un congrès hal-02138767v1
Technology Route towards SiC Thyristor Devices with Amplifying Gate Design S Scharnholz,R Hassdorf,D Bauersfeld,B Vergne,L V Phunget al. Compound Semiconductor Week 2017, May 2017, Berlin, Germany Communication dans un congrès hal-03103484v1
OBIC Technique Applied to Wide Bandgap Semiconductors Dominique Planson,Hassan Hamad 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe & 13th EXMATEC ‐ Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2016, Aveiro, Portugal Communication dans un congrès hal-01388036v1
Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy Selsabil Sejil,Loïc Lalouat,Mihai Lazar,Davy Carole,Christian Brylinskiet al. ECSCRM'16, Sep 2016, Halkidiki, Greece Communication dans un congrès hal-02138729v1
Realization and characterization of carbonic layers on 4H-SiC for electrochemical detections Julien Pezard,V. Souliere,Mihai Lazar,Naoufel Haddour,François Buretet al. ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52 Communication dans un congrès hal-02138738v1
Étude en simulation et conception d'un transistor bipolaire (BJT) 10 kV en 4H-SiC Beverley Choucoutou,Luong Viet Phung,Pierre Brosselard,Michel Mermet-Guyennet,Dominique Planson Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France Communication dans un congrès hal-01361668v1
Simulation-based Study on the Optical Beam Intensity Dependence of the Optically Triggered 4H-SiC Thyristors Turn-on Operation Junichi Hasegawa,Loris Pace,Luong Viêt Phung,Mutsuko Hatano,Dominique Planson International Conference on Solid State Devices and Materials 2016, Sep 2016, Tsukuba International Congress Center Tsukuba, Japan. ⟨10.7567/SSDM.2016.PS-14-17L⟩ Communication dans un congrès hal-04088082v1
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices Mihai Lazar,Davy Carole,Christophe Raynaud,Gabriel Ferro,Selsabil Sejilet al. CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ Communication dans un congrès hal-01388019v1
Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,S Sharnholz,Bertrand Vergneet al. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138523v1
Localized VLS Epitaxy Process as a P-type Doping Alternative Technique for 4H-SiC P/N Junctions Selsabil Sejil,Mihai Lazar,Davy Carole,Christian Brylinski,Dominique Plansonet al. Semiconductor Interface Specialists Conference (SISC 2015), Dec 2015, Arlington, United States Communication dans un congrès hal-02428659v1
Precise Automated Semiconductor Characterization under Ambient Control for testing wide band gap semiconductors Bertrand Vergne,Sigo Scharnholz,Dominique Planson,Dominique Tournier,Pierre Brosselard International Symposium on High Voltage Engineering (ISH) 2015, Aug 2015, Pilsen, Czech Republic Communication dans un congrès hal-02428642v1
Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Dominique Planson CAS, Oct 2015, Sinaia, Romania. ⟨10.1109/SMICND.2015.7355226⟩ Communication dans un congrès hal-01388024v1
Vertical termination filled with adequate dielectric for SiC devices in HVDC applications T. Nguyen-Bui,Mihai Lazar,Jean-Louis Augé,Hervé Morel,L. Phunget al. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138529v1
Study and optimization of a 600V Pseudo-vertical GaN-on-silicon rectifier by finite elements simulation A Souguir-Aouani,N. Thierry-Jebali,Dominique Tournier,A Yvon,E Collardet al. ICSCRM 2015, Oct 2015, Giardini Naxos, Italy. pp.Mo-P-44 Communication dans un congrès hal-02138522v1
Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current Hassan Hamad,Christophe Raynaud,Pascal Bevilacqua,Sigo Scharnholz,Dominique Planson ECSCRM'14, Sep 2014, Grenoble, France. pp.MO2-IP-08 Communication dans un congrès hal-02133683v1
Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase Tony Abi-Tannous,Maher Soueidan,G. Ferro,Mihai Lazar,Christophe Raynaudet al. ICSCRM, Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138520v1
4H-SiC VJFETs with Self-Aligned Contacts Konstantinos Zekentes,Antonis Stavrinidis,George Konstantinidis,Maria Kayambaki,Konstantinos Vamvoukakiset al. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75 Communication dans un congrès hal-02133681v1
4H-SiC P-N junctions realized by VLS for JFET lateral structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 Communication dans un congrès hal-02133686v1
Nouveaux contacts électriques sur SiC-4H de type p : réalisation de phases MAX Tony Abi Tannous,Maher Soueidan,Gabriel Ferro,Berangere Toury-Pierre,Mihai Lazaret al. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065327v1
Conception de thyristors SiC permettant l'étude de l'amplification interne de l'allumage Sigo Scharnholz,Luong Viêt Phung,Dominique Tournier,Bertrand Vergne,Ralf Hassdorfet al. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065352v1
Imagerie 2D du champ électrique dans les diodes SiC-4H haute tension par la technique OBIC Hassan Hamad,Pascal Bevilacqua,Dominique Planson,Christophe Raynaud,Dominique Tournieret al. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065307v1
On the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing Tony Abi Tannous,Maher Soueidan,Gabriel Ferro,Mihai Lazar,Bérangère Touryet al. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-63 Communication dans un congrès hal-02428741v1
Optimisation de la terminaison d'une diode Schottky diamant haute tension Houssam Arbess,Karine Isoird,Dominique Planson,Luong Viet Phung Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065274v1
Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique Marc Petit,Seddik Bacha,Xavier Guillaud,Hervé Morel,Dominique Plansonet al. 1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France Communication dans un congrès hal-01065154v1
Etude de différents transistors de puissance SiC 1.2kV des températures cryogéniques aux hautes températures Thibaut Chailloux,Cyril Calvez,Dominique Tournier,Dominique Planson Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065281v1
Characterization and comparison of 1.2 kV SiC power devices from cryogenic to high temperature Thibaut Chailloux,Cyril Calvez,Dominique Tournier,Dominique Planson ECSCRM'14, Sep 2014, Grenoble, France Communication dans un congrès hal-02132486v1
Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects Dominique Planson,Pierre Brosselard,Karine Isoird,Mihai Lazar,Luong Viêt Phunget al. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩ Communication dans un congrès hal-01388002v1
Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes Hassan Hamad,Pascal Bevilacqua,Christophe Raynaud,Dominique Planson 2014 IEEE PRIME, Jun 2014, Grenoble, France. ⟨10.1109/PRIME.2014.6872761⟩ Communication dans un congrès hal-01388043v1
3D TCAD Simulations for More Efficient SiC Power Devices Design Luong Viêt Phung,Dominique Planson,Pierre Brosselard,Dominique Tournier,Christian Brylinski Electro Chemical Society 224th meeting, Oct 2013, San Francisco, United States. ⟨10.1149/05804.0331ecst⟩ Communication dans un congrès hal-04240572v1
Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport N Thierry-Jebali,Mihai Lazar,A Vo-Ha,D Carole,V Soulièreet al. International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan Communication dans un congrès hal-04011693v1
SiC power devices operation from cryogenic to high temperature: investigation of various 1.2kV SiC power devices T Chailloux,C Calvez,N Thierry-Jebaly,D. Tournier,Dominique Planson International Conference on Silicon Carbide and Related Materials (ICSCRM) 2013, Sep 2013, Miyazaki, Japan. pp.1122-1125, ⟨10.4028/www.scientific.net/MSF.778-780.1122⟩ Communication dans un congrès hal-04169013v1
Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics Thibault Chailloux,Cyril Calvez,Pascal Bevilacqua,Dominique Planson,Dominique Tournier HiTEN'13, Jul 2013, Oxford, United Kingdom Communication dans un congrès hal-03326669v1
p-type SiC growth on diamond substrate by VLS Transport Arthur Vo-Ha,Davy Carole,Mihai Lazar,D. Tournier,François Cauwetet al. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-04423301v1
Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport Davy Carole,Arthur Vo-Ha,Anthony Thomas,Mihai Lazar,Nicolas Thierry Thierry-Jebaliet al. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04362529v1
Pulse Current Characterization of SiC GTO Thyristors with Etched JTE Sigo Scharnholz,Ralf Hassdorf,Gontran Pâques,Bertrand Vergne,Dominique Planson European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Sep 2012, Saint-Petersbourg, Russia. pp.986-989, ⟨10.4028/www.scientific.net/MSF.740-742.986⟩ Communication dans un congrès hal-04423357v1
Impact of design on electrical characteristics of 3.5 kV 4H-SiC JBS diode Pierre Brosselard,F Chevalier,B Proux,N Thierry-Jebali,Pascal Bevilacquaet al. International Silicon Carbide Hetero-Epitaxy HeteroSiC and Workshop on Advanced Semiconductor Materials and devices for Power Electronics WASMPE, Jun 2013, Nice, France Communication dans un congrès hal-04022951v1
High temperature, Smart Power Module for aircraft actuators Khalil El Falahi,Stanislas Hascoët,Cyril Buttay,Pascal Bevilacqua,Luong Viet Phunget al. HiTEN'13, Jul 2013, Oxford, United Kingdom Communication dans un congrès hal-00874666v1
Réalisation et caractérisation de diodes Schottky en diamant monocristallin protégées par plaque de champ sur Si3N4 Fabien Thion,Karine Isoird,Dominique Planson,Marie-Laure Locatelli,Henri Schneideret al. 14ème EPF, Jul 2012, Bordeaux, France. 4 p Communication dans un congrès hal-01005917v1
PASChAC, système automatisé de caractérisation de composants sur wafer Bertrand Vergne,Gontran Pâques,Claudia Maurer,Sigo Scharnholz,Pierre Brosselardet al. Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France Communication dans un congrès hal-02282734v1
Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour Stéphane Biondo,Mihai Lazar,Laurent Ottaviani,Wilfried Vervisch,Olivier Palaiset al. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩ Communication dans un congrès hal-00661511v1
Pressureless Silver Sintering Die-Attach for SiC Power Devices Stanislas Hascoët,Cyril Buttay,Dominique Planson,Rodica Chiriac,Amandine Masson CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-00759987v2
Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport Nicolas Thierry-Jebali,Mihai Lazar,Arthur Vo-Ha,Davy Carole,Véronique Soulièreet al. Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04366810v1
Electrical characteristics (I-V) of field plate protected vertical diamond Schottky diodes F. Thion,K. Isoird,Dominique Planson,Marie-Laure Locatelli,Henri Schneideret al. International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain Communication dans un congrès hal-03966084v1
Design of an integrated power converter in Wide Band Gap for harsh environments Jean-François Mogniotte,Dominique Tournier,Pascal Bevilacqua,Philippe Godignon,Dominique Planson Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany Communication dans un congrès hal-02124203v1
Protections périphériques des composants 1200 V Florian Chevalier,Pierre Brosselard,D. Tournier,Bertrand Vergne,Nicolas Dheillyet al. 14ème EPF, Jul 2012, Bordeaux, France. 4 p Communication dans un congrès hal-04560447v1
Using a two step plasma etching process for diamond power devices F. Thion,K. Isoird,Dominique Planson,Marie-Laure Locatelli,Henri Schneideret al. International Conference on Diamond and Carbon Materials Granada, SPAIN, 2012, Granada, Spain Communication dans un congrès hal-03966086v1
Thyristors GTO haute tension en carbure de silicium avec terminaison JTE gravée Sigo Scharnholz,Gontran Pâques,Bertrand Vergne,Claudia Maurer,Dominique Plansonet al. Electronique de Puissance du Futur 2012, Jul 2012, Bordeaux, France Communication dans un congrès hal-04423483v1
A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET F Chevalier,G Grosset,L Dupuy,Dominique Tournier,Dominique Plansonet al. HETECH, Nov 2012, Barcelone, France Communication dans un congrès hal-01113179v1
4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes Stéphane Biondo,Laurent Ottaviani,Mihai Lazar,Dominique Planson,Julian Duchaineet al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747301v1
Evaluation of silver-sintering die attach Wissam Sabbah,Raphaël Riva,Stanislas Hascoët,Cyril Buttay,Stephane Azzopardiet al. 7th CIPS, Mar 2012, Nuremberg, Germany. pp.237-243 Communication dans un congrès hal-00707733v1
Protections périphériques de diodes bipolaires 10 kV en SiC-4H Duy Minh Nguyen,Runhua Huang,Bertrand Vergne,Pascal Bevilacqua,Philippe Godignonet al. 14ème Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, Bordeaux, France Communication dans un congrès hal-04560471v1
Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC Farah Laariedh,Mihai Lazar,Pierre Cremilleu,Jean-Louis Leclercq,Dominique Planson HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.169-173, ⟨10.4028/www.scientific.net/MSF.711.169⟩ Communication dans un congrès hal-00661507v1
Towards Very High Voltage SiC Power Devices Dominique Planson,Pierre Brosselard,Dominique Tournier,L V Phung,C. Brylinski PRiME 2012-ECS, Oct 2012, Honolulu-Hawaii, United States. ⟨10.1149/05003.0425ecst⟩ Communication dans un congrès hal-02116906v1
Report de puce par frittage d'argent - mise en oeuvre et analyse Amandine Masson,Wissam Sabbah,Raphaël Riva,Cyril Buttay,Stephane Azzopardiet al. 14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61) Communication dans un congrès hal-00729156v1
Diode PiN 6500V en SiC-4H Pierre Brosselard,Runhua Huang,Duy Minh Nguyen,Dominique Planson,Lionel Dupuyet al. 14ème EPF, Jul 2012, Bordeaux, France. 4 p Communication dans un congrès hal-04573111v1
SIMS analyses applied to open an optical window in 4H-SiC devices for electro-optical measurements Mihai Lazar,François Jomard,Duy Minh Nguyen,Christophe Raynaud,Gontran Pâqueset al. ICSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747300v1
Edge termination design improvements for 10 kV 4H-SiC bipolar diodes D M Nguyen,R Huang,L V Phung,Maxime Berthou,P Godignonet al. Silicon Carbide and Related Materials 2012, Sep 2012, Saint-Pétersbourg, Russia Communication dans un congrès hal-03316271v1
Design and characterization of a novel 3.3 kV 4H-SiC JFET Florian Chevalier,Pierre Brosselard,D. Tournier,Grégory Grosset,Lionel Dupuyet al. Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04048180v1
600 V PiN diodes fabricated using on-axis 4H silicon carbide Gabriel Civrac,Farah Laariedh,Nicolas Thierry-Jebali,Mihai Lazar,Dominique Plansonet al. International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), Sep 2011, Cleveland, United States. pp.969-972, ⟨10.4028/www.scientific.net/MSF.717-720.969⟩ Communication dans un congrès hal-00747295v1
OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients Duy Minh Nguyen,Christophe Raynaud,Mihai Lazar,Gontran Pâques,Sigo Scharnholzet al. CSCRM, Sep 2011, Cleveland, United States Communication dans un congrès hal-00747298v1
Réalisation de contact ohmique sur SiC-4H type P Farah Laariedh,Mihai Lazar,Pierre Cremillieu,Jean -Louis Leclercq,Dominique Planson JNRDM2011, May 2011, Paris, France Communication dans un congrès hal-04560246v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD Communication dans un congrès hal-00661500v1
Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection Duy Minh Nguyen,Gontran Pâques,Nicolas Dheilly,Christophe Raynaud,Dominique Tournieret al. CSCRM, Aug 2010, Oslo, Norway Communication dans un congrès hal-00661470v1
Parallel and serial association of SiC light triggered thyristors Nicolas Dheilly,Gontran Pâques,Sigo Scharnholz,Dominique Planson HeteroSiC & WASMPE 2011, Jun 2011, Tours, France Communication dans un congrès hal-00661520v1
Pulse characterization of optically triggered SiC thyristors Nicolas Dheilly,Gontran Pâques,Sigo Scharnholz,Dominique Planson International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM'2011), Philipp Neudeck, Sep 2011, Cleveland, United States. pp.FR-1A-3 Communication dans un congrès hal-00747341v1
Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State Mihai Lazar,Fabrice Enoch,Farah Laariedh,Dominique Planson,Pierre Brosselard CSCRM, Aug 2010, Oslo, Norway. pp.477-480, ⟨10.4028/www.scientific.net/MSF.679-680.477⟩ Communication dans un congrès hal-00661443v1
Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics Laurent Ottaviani,Stéphane Biondo,Mihai Lazar,Wilfried Vervisch,Julian Duchaineet al. WOCSDICE, May 2011, Catania, Italy. pp.181 Communication dans un congrès hal-00661522v1
Perspectives on SiC and III-N Based Devices for Power Electronics Christian Brylinski,Dominique Planson 220th ECS Meeting, The Electrochemical Society, Oct 2011, Boston, United States. pp.139-152, ⟨10.1149/1.3631492⟩ Communication dans un congrès hal-02865456v1
Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus Bertrand Vergne,Gontran Pâques,Jens-Peter Konrath,Sigo Scharnholz,Nicolas Dheillyet al. 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618684v1
Conception d'une protection périphérique originale pour composants bipolaires en carbure de silicium (SiC) Nicolas Dheilly,Dominique Planson,Gontran Pâques,Sigo Scharnholz 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618709v1
Réalisation de Diodes SiC Simples pour l'Etude de Passivations Gontran Pâques,Sigo Scharnholz,Jens-Peter Konrath,Bertrand Vergne,Nicolas Dheillyet al. 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618701v1
A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT Dominique Tournier,Pascal Bevilacqua,Pierre Brosselard,Dominique Planson CSCRM, Oct 2009, Nuremberg, Germany. pp.1155-1158, ⟨10.4028/www.scientific.net/MSF.645-648.1155⟩ Communication dans un congrès hal-00496976v1
Protection périphérique pour composants de puissance en diamant Fabien Thion,Karine Isoird,Dominique Planson,Marie-Laure Locatelli 13ème EPF, Jun 2010, Saint-Nazaire, France. 4p Communication dans un congrès hal-00618708v1
Optical triggering of 4H-SiC thyristors with a 365 nm UV LED Nicolas Dheilly,Gontran Pâques,Dominique Planson,P Bevilacqua,S Scharnholz European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway. ⟨10.4028/www.scientific.net/MSF.679-680.690⟩ Communication dans un congrès hal-03990671v1
Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height Gontran Pâques,Nicolas Dheilly,Dominique Planson,Sigo Scharnholz,Rik W. de Donckeret al. European Conference on Silicon Carbide and Related Materials ECSCRM-2010, Aug 2010, Oslo (Norway), Norway Communication dans un congrès hal-04349694v1
SiC BJT driver applied to a 2 kW inverter: Performances and limitations Dominique Tournier,Pascal Bevilacqua,Pierre Brosselard,Dominique Planson,Bruno Allard 6th CIPS, Mar 2010, Nuremberg, Germany Communication dans un congrès hal-00579223v1
Graded Etched Junction Termination for SiC Thyristors Gontran Pâques,Nicolas Dheilly,Dominique Planson,Rik W. de Doncker,Sigo Scharnholz European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Aug 2010, Oslo, Norway Communication dans un congrès hal-04347104v1
Simulation and design of junction termination structures for diamond Schottky diodes Fabien Thion,Karine Isoird,Dominique Planson,Marie-Laure Locatelli,H Ding European Conference on Diamond Diamond-like Materials Carbon Nanotubes and Nitrides (DIAMOND 2010), Sep 2010, Budapest, Hungary Communication dans un congrès hal-03656932v1
State of the art of High Temperature Power Electronics Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacquaet al. Microtherm, Jun 2009, Lodz, Poland. pp.8-17 Communication dans un congrès hal-00413349v1
Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique Nicolas Dheilly,Dominique Planson,Pierre Brosselard,Hassan Jawad,Pascal Bevilacquaet al. ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ Communication dans un congrès hal-00391369v1
SiC JFET for high temperature power switches Dominique Bergogne,Dominique Tournier,Rami Mousa,Mohsen Shafiee Khoor,Dominique Plansonet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4 Communication dans un congrès hal-00373058v1
Current limiting with SiC JFET structures Dominique Tournier,Dominique Bergogne,Asif Hamoud,Dominique Planson,Rami Mousaet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5 Communication dans un congrès hal-00373046v1
Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters Dominique Bergogne,Hervé Morel,Dominique Tournier,Bruno Allard,Dominique Plansonet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 Communication dans un congrès hal-00372982v1
Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses Christophe Raynaud,D M Nguyen,Pierre Brosselard,A Pérez-Tomás,Dominique Plansonet al. European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Sep 2008, Barcelone, Spain Communication dans un congrès hal-03331775v1
SiC Power Semiconductor Devices for new Applications in Power Electronics Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Nicolas Dheilly,Hervé Morelet al. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ Communication dans un congrès hal-00373016v1
Modeling and high temperature characterization of SiC-JFET Rami Mousa,Dominique Planson,Hervé Morel,Bruno Allard,Christophe Raynaud IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩ Communication dans un congrès hal-00369420v1
Composant de protection série en SiC 450A de forte densité de puissance D. Tournier,Pascal Bevilacqua,Hervé Morel,Dominique Planson,Pierre Brosselardet al. 12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France Communication dans un congrès hal-04624757v1
Protection périphérique d’une diode bipolaire SiC-4H. Simulation électrique de JTE à dopage variable Dominique Planson,Nicolas Dheilly,Pierre Brosselard,D. Tournier 12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France Communication dans un congrès hal-04606517v1
Contact ohmique de faible résistivité sur SiC-4H dopé type-P M Soueidan,Mihai Lazar,D. Tournier,Dominique Planson,Christophe Raynaudet al. 4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France Communication dans un congrès hal-04606381v1
Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications Michel Mermet-Guyennet,Hervé Morel,Dominique Planson,Henri Schneider,Jocelyn Achard 12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France Communication dans un congrès hal-04606571v1
Comparison of electrical properties of ohmic contact realized on p-type 4H-SiC D M Nguyen,Christophe Raynaud,Mihai Lazar,H Vang,Dominique Planson ICSCRM'2007, Oct 2007, Otsu, Japan Communication dans un congrès hal-02961607v1
New Applications in Power Electronics Based on SiC Power Devices Hervé Morel,Dominique Bergogne,Dominique Planson,Bruno Allard,Régis Meuret ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩ Communication dans un congrès hal-02958610v1
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Erwan Oliviero,Mihai Lazar,Heu Vang,Christiane Dubois,Pierre Cremilleuet al. CSCRM, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.611-614, ⟨10.4028/www.scientific.net/MSF.556-557.611⟩ Communication dans un congrès hal-00368931v1
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah,Damien Risaletto,Christophe Raynaud,Kamel Besbes,Dominique Bergogneet al. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Communication dans un congrès hal-02958620v1
Ni-Al Ohmic contact to p-type 4H-SiC Heu Vang,Mihai Lazar,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. 2006 Spring Meeting of the European Materials Research Society (E-MRS 2006), May 2006, Nice, France. ⟨10.1016/j.spmi.2006.08.004⟩ Communication dans un congrès hal-03316263v1
Optimisation de la structure double RESURF d’un transistor JFET latéral SiC-4H pour le développement de convertisseurs de puissance intégrés Johnny Gié,Mihai Lazar,Pierre Brosselard,Dominique Planson,Christophe Raynaud 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04619604v1
Onduleur à JFET sans diode de roue libre externe Dominique Bergogne,Pierre Lefranc,D. Tournier,Pascal Bevilacqua,Dominique Plansonet al. 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04618123v1
Diode PiN SiC-4H 1,2kV sur épi-wafer SiCrystal Heu Vang,Christophe Raynaud,Pierre Brosselard,Mihai Lazar,Pierre Cremillieuet al. 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04618792v1
High temperature operating converter Dominique Bergogne,Pascal Bevilacqua,Dominique Planson,Hervé Morel 4th CIPS, Jun 2006, Naples, Italy. pp.201-204 Communication dans un congrès hal-00413394v1
Towards an integrated inverter based on lateral JFET SiC J. Gié,Mihai Lazar,Dominique Planson,Dominique Bergogne,Pascal Bevilacquaet al. 4th CIPS, Jun 2006, Naples, Italy. pp.171-176 Communication dans un congrès hal-00413390v1
Current sensing for SiC Power Devices Dominique Tournier,Miquel Vellvehi,Philippe Godignon,Josep Montserrat,Dominique Plansonet al. CSCRM, Sep 2005, Pittsburgh, PA, United States. pp.1215-1218 Communication dans un congrès hal-00391433v1
Deep SiC etching with RIE Mihai Lazar,Heu Vang,Pierre Brosselard,Christophe Raynaud,Pierre Cremilleuet al. E-MRS 2006, May 2006, Nice, France. pp.3886392 Communication dans un congrès hal-03305997v1
Étude de cascodes SiC en vue d’applications électroniques impulsionnelles Gontran Pâques,Sigo Scharnholz,Heu Vang,Dominique Planson 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04618765v1
300 °C operating junction temperature inverter leg investigations Dominique Bergogne,Pascal Bevilacqua,Sabrine M'Rad,Dominique Planson,Hervé Morelet al. EPE, Sep 2005, Dresden, Germany Communication dans un congrès hal-00413402v1
Gravure RIE profonde du SiC pour la réalisation de composants de puissance Heu Vang,T. Morel,F. Chaboud,Pierre Brosselard,Pierre Cremillieuet al. 3eme colloque sur les Matériaux du Génie Electrique, Dec 2005, Lyon, France Communication dans un congrès hal-04620248v1
SiC-based current limiter devices Jean-Pierre Chante,Dominique Tournier,Dominique Planson,Christophe Raynaud,Mihai Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France. pp.951-956, ⟨10.4028/www.scientific.net/MSF.457-460.951⟩ Communication dans un congrès hal-04032970v1
Silicon Carbide Controlled Current Limiter, Current Limitation Strategies, Foreseen Applications and Benefits Dominique Planson,Dominique Tournier,Jean-Pierre Chante,Pascal Bevilacqua,Christophe Raynaudet al. International Power Electronics and Motion Control (IPEMC'04), Aug 2004, Xi'an, China Communication dans un congrès hal-02468376v1
HIGH VOLTAGE AND SPECIFIC POWER SILICON CARBIDE DEVICES Dominique Planson,Marie-Laure Locatelli,Mihai Lazar,Christophe Raynaud,Jean-Pierre Chanteet al. 10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France Communication dans un congrès hal-04621819v1
P-type SiC layers formed by VLS induced selective epitaxial growth Mihai Lazar,C Jacquier,Ch Dubois,Christophe Raynaud,G Ferroet al. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953086v1
Conception d'un transistor JFET 5 kV en SiC-4H Pierre Brosselard,Dominique Planson,Léa Di Cioccio,Thierry Billon,Sigo Scharnholzet al. 10ème colloque Electronique de Puissance du Futur, Sep 2004, Toulouse, France Communication dans un congrès hal-04621465v1
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Pierre Brosselard,Thierry Bouchet,Dominique Planson,Sigo Scharnholz,Gontran Pâqueset al. European Conference on Silion Carbide and Related Materials (ECSCRM 2004), Sep 2004, Bologne, Italy Communication dans un congrès hal-02953080v1
Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment Marie-Laure Locatelli,Karine Isoird,Sorin Dinculescu,Vincent Bley,Thierry Lebeyet al. 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France Communication dans un congrès hal-02492270v1
Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination G Brezeanu,Philippe Godignon,E Dimitrova,C Raynaud,Dominique Plansonet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France Communication dans un congrès hal-02937545v1
Active clamping of IGBT: capacitor replaces TRANSIL diodes Pierre Lefranc,Dominique Bergogne,Dominique Planson,Bruno Allard,Hervé Morelet al. 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France Communication dans un congrès hal-02497603v1
Design, fabrication and characterisation of 5 kV 4H-SiC p + n planar bipolar diodes protected by junction termination extension Christophe Raynaud,M. Lazar,Dominique Planson,J.-P Chante,Z. Sassi International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02498145v1
Electrothermal simulations of silicon carbide current limiting devices Dominique Planson,J.P. Chante,M. Lazar,P. Brosselard,Christophe Raynaudet al. 2003 IEEE International Conference on Industrial Technology, Dec 2003, Maribor, Slovenia. pp.1135-1140, ⟨10.1109/ICIT.2003.1290823⟩ Communication dans un congrès hal-02498210v1
The role of the ion implanted emitter state on 6H-SiC power diodes behaviour. A statistical study. M Lazar,G Cardinali,C Raynaud,A Poggi,Dominique Plansonet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France Communication dans un congrès hal-02941715v1
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Pierre Brosselard,Volker Zorngiebel,Dominique Planson,Sigo Scharnholz,J.-P Chanteet al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503456v1
On chip temperature monitoring of a SiC current limiter Dominique Tournier,Philippe Godignon,José Millán,Jean-Pierre Chante,Dominique Plansonet al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02949618v1
Silicon Carbide specific components for power electronics system protection J.-P Chante,Dominique Planson,Christophe Raynaud,Marie-Laure Locatelli,M. Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM'2003), Oct 2003, Lyon, France Communication dans un congrès hal-02503449v1
Current limitation with SiC devices D Tournier,P. Godignon,Dominique Planson,F. Nallet,J. Millánet al. 10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France Communication dans un congrès hal-02497590v1
Design and simulation of a planar anode GTO thyristor on SiC Pierre Brosselard,Dominique Planson,Sigo Scharnholz,V. Zorngiebel,Mihai Lazaret al. CAS (International Semiconductor Conference), Sep 2003, Sinaia, Romania. pp.222, ⟨10.1109/SMICND.2003.1252421⟩ Communication dans un congrès hal-00410085v1
Fabrication and Characterisation of High Voltage SiC-Thyristors Volker Zorngiebel,S. Scharnholz,E. Spahn,P Brosselard,Jean-Pierre Chanteet al. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02485104v1
Substrat SiCOI : Avancées vers les applications « System on Chip » Nicolas Daval,François Templier,Fabrice Letertre,Marie-Laure Locatelli,Dominique Plansonet al. EPF2002 - Colloque 2002, Electronique de Puissance du Futur, Nov 2002, Montpellier, France Communication dans un congrès hal-04400220v1
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H and 6H-SiC Roberta Nipoti,Francesco Moscatelli,Andrea Scorzoni,Antonella Poggi,Gian Carlo Cardinaliet al. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K6.2⟩ Communication dans un congrès hal-02485106v1
Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device F. Nallet,P. Godignon,Dominique Planson,Christophe Raynaud,J.P. P Chante 14th International Symposium on Power Semiconductor Devices and ICs, Jun 2002, Sante Fe, United States. pp.209-212, ⟨10.1109/ISPSD.2002.1016208⟩ Communication dans un congrès hal-02471269v1
OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension S.R. Wang,Christophe Raynaud,Dominique Planson,Mihai Lazar,Jean-Pierre Chante European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464381v1
COMPOSANT NνN POUR L'ETUDE DE LA ZCEM (ZONE DE CHARGE D'ESPACE MIXTE) DES TRANSISTORS MOS Guillaume Verneau,Laurent Aubard,Thierry Bouchet,Jacques Arnould,Pierre Brosselardet al. Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France Communication dans un congrès hal-04390458v1
A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates François Templier,Nicolas Daval,Léa Di Cioccio,Daniel Bourgeat,Fabrice Letertreet al. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩ Communication dans un congrès hal-02298409v1
A 4H-SiC high-power-density VJFET as controlled current limiter Dominique Tournier,Philippe Godignon,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. Industry Applications Society (IAS'02), Oct 2002, Pittsburgh (Pennsylvania), United States. pp.2248-2251 Communication dans un congrès hal-02477074v1
Limiteur de courant à forte densité de puissance en carbure de silicium Dominique Tournier,Philippe Godignon,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. Electronique de Puissance du Futur (EPF 2002), Nov 2002, Montpellier (FR), France Communication dans un congrès hal-04398450v1
Characterization of a 4H-SiC High Power Density Controlled Current Limiter Dominique Tournier,Xavier Jorda,Josep Montserrat,Dominique Planson,Christophe Raynaudet al. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02458130v1
SiC On Insulator as substrate for power Schottky diodes N. Daval,F Templier,F. Letertre,Dominique Planson,Léa Di Cioccioet al. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden Communication dans un congrès hal-02464356v1
Experimental characterization of a 4H-SiC high voltage current limiting device Franck Nallet,Dominique Planson,Philippe Godignon,Marie-Laure Locatelli,Mihai Lazaret al. European Materials Society (E-MRS Spring Meeting) 2001, symposium F, Jun 2001, Strasbourg, France Communication dans un congrès hal-03714731v1
Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application N. Arssi,M.L. Locatelli,Dominique Planson,J.P. Chante,V. Zorngiebelet al. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344, ⟨10.1109/SMICND.2001.967479⟩ Communication dans un congrès hal-02145398v1
Simulation study of a new current limiting device : a vertical alpha-SiC etched JFET - Controlled Current Limiter Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Jean-Pierre P Chanteet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476207v1
Study of 6H-SiC high voltage bipolar diodes under reverse biases Karine Isoird,Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. European Materials Research Society (E-MRS Spring Meeting) 2001, Jun 2001, Strasbourg, France Communication dans un congrès hal-03712596v1
A comparative study of high temperature Aluminium post-implantation annealing in 6H and 4H-SiC, non-uniformity temperature effects M. Lazar,Christophe Raynaud,Dominique Planson,Marie-Laure Locatelli,K. Isoirdet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02476227v1
4H-SiC bipolar power diodes realized by ion implantation M. Lazar,Dominique Planson,K. Isoird,Marie-Laure Locatelli,Christophe Raynaudet al. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩ Communication dans un congrès hal-02145397v1
Realization of a High Current and Low RON 600V Current Limiting Device F Nallet,P Godignon,Dominique Planson,Christophe Raynaud,Jean-Pierre P Chante International Conference on Silicon Carbide and Related Materials, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975963v1
Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET Dominique Tournier,Phillippe Godignon,Josep Montserrat,Dominique Planson,Jean-Pierre P Chanteet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02471274v1
Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing Mihai Lazar,Karine Isoird,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaudet al. 43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States Communication dans un congrès hal-02275712v1
Study of 4H-SiC high voltage bipolar diodes under reverse biases using electrical and Obic characterization K Isoird,M Lazar,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. ICSCRM, Oct 2001, Tsukuba, Japan Communication dans un congrès hal-02975956v1
Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components Dominique Planson,S. Margenat,F. Nallet,Hervé Morel,Marie-Laure Locatelliet al. 3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩ Communication dans un congrès hal-04386919v1
Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications F. Nallet,A Sénès,Dominique Planson,M.L. Locatelli,J.P. Chanteet al. 3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.396-401, ⟨10.1109/IPEMC.2000.885436⟩ Communication dans un congrès hal-04386905v1
Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications F. Nallet,A. Senes,Dominique Planson,Marie-Laure Locatelli,J.P. Chanteet al. 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, May 2000, Toulouse, France. pp.287-290, ⟨10.1109/ISPSD.2000.856827⟩ Communication dans un congrès hal-02972084v1
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing Mihai Lazar,Laurent Ottaviani,Marie-Laure Locatelli,Christophe Raynaud,Dominique Plansonet al. European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72 Communication dans un congrès hal-02151711v1
Silicon carbide power devices J.P. Chante,M.L. Locatelli,Dominique Planson,L. Ottaviani,E. Morvanet al. 1998 International Semiconductor Conference. CAS'98 Proceedings, Oct 1998, Sinaia, Romania. pp.125-134, ⟨10.1109/SMICND.1998.732305⟩ Communication dans un congrès hal-04277218v1
The negative temperature coefficient of the breakdown voltage of SiC p-n structures and deep centers in SiC A A Lebedev,A M Strel'Chuk,S. Ortolland,Christophe Raynaud,Marie-Laure Locatelliet al. International Conference on Silicon Carbide and Related Materials ICSCRM'95, Sep 1995, Kyoto, Japan Communication dans un congrès hal-03712441v1
Study of Silicon Carbide high voltage ability: experimental results on expitaxial-emitter and implanted-emitter diodes Marie-Laure Locatelli,Sylvie Ortolland,Frédéric Lanois,Dominique Planson,Thierry Billonet al. International Seminar on Silicon Carbide Semiconductor and SiC-based devices, Sep 1995, Novgorod, Russia Communication dans un congrès hal-02972067v1
A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS Shan-Qi Zhao,Dominique Planson,Jean-Pierre Chante 7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany Communication dans un congrès hal-02968512v1

Poster de conférence (3)

Characterization of β-Ga2O3 and device fabrication Enora Vuillermet,Changzi Lu,Camille Sonneville,Pierre Brosselard,Jean-Marie Bluetet al. Société Française de Physique, Jun 2025, Troyes, France Poster de conférence hal-05099267v1
Carrier density analysis in stressed n-doped GaN on sapphire layers Ndembi Ignoumba-Ignoumba,Camille Sonneville,Éric Frayssinet,Adrien Bidaud,Florian Bartoliet al. GaN Marathon 2024, Jun 2024, Verona, Italy. 2024 Poster de conférence hal-05054677v1
Realization and characterization of vertical PIN diode on 100 diamond Florent Sevely,Josiane Tasselli,Karine Isoird,Luong Viêt Phung,Camille Sonnevilleet al. 33rd International Conference on Diamond and Carbon Materials, Sep 2023, Palma, Spain. , 2023 Poster de conférence hal-04193251v1

Chapitre d'ouvrage (3)

Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation Christophe Raynaud,Duy Minh Nguyen,Nicolas Dheilly,Dominique Tournier,Pierre Brosselardet al. Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl. Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications, Wiley, 319-340 (chapitre 12), 2009 Chapitre d'ouvrage hal-00661529v1
Silicon carbide applications in power electronics Marie-Laure Locatelli,Dominique Planson Robert Perret. Power Electronics Semiconductor Devices, Wiley-ISTE, pp.185-265, 2009 Chapitre d'ouvrage hal-00661525v1
Applications du carbure de silicium en électronique de puissance Marie-Laure Locatelli,Dominique Planson Robert Perret. Mise en oeuvre des composants électroniques de puissance, HERMES, pp.243-324, 2003 Chapitre d'ouvrage hal-03925159v1

Brevet (2)

CREATION D’UNE FENETRE DE SORTIE DE RAYONNEMENT POUR UN COMPOSANT PHOTOEMETTEUR Mihai Lazar,Dominique Planson,Hervé Morel,Gilles Lerondel,Komla Dunyo Nomenyo France, N° de brevet: FR2201067. 2022 Brevet hal-03702862v1
FABRICATION D’UN COMPOSANT EMETTEUR DE RAYONNEMENT A PARTIR D’UN SUBSTRAT DE CARBURE DE SILICIUM Mihai Lazar,Dominique Planson,Hervé Morel,Christophe Couteau France, N° de brevet: FR2201064. 2022 Brevet hal-03702870v1