Elisabeth BLANQUET

Publications

Article dans une revue (82)

Thermochemical treatment of sputtered-AlN/2D MoS&lt;sub&gt;2&lt;/sub&gt; seed layers: a new elaboration process of highly c -axis AlN films J Patouillard,R Gassilloud,Frédéric Mercier,A Dussaigne,B Hyotet al. Journal of Physics: Materials, 2025, 8 (2), pp.025014. ⟨10.1088/2515-7639/adc3cb⟩ Article dans une revue hal-05396537v1
Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization Michail Gavalas,Yann Gallou,Didier Chaussende,Elisabeth Blanquet,Frédéric Mercieret al. Micromachines, 2025, 16 (3), pp.276. ⟨10.3390/mi16030276⟩ Article dans une revue hal-05396550v1
Integration of epitaxial LiNbO3 thin films with silicon technology Ausrine Bartasyte,Stefania Oliveri,Sondes Boujnah,Samuel Margueron,Romain Bacheletet al. Nanotechnology, 2024, 35, pp.175601. ⟨10.1088/1361-6528/ad1b98⟩ Article dans une revue hal-04396804v1
MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy J. Patouillard,M. Bernard,S. Cadot,R. Gassilloud,N. Bernieret al. Journal of Vacuum Science & Technology A, 2024, 42 (5), ⟨10.1116/6.0003652⟩ Article dans une revue cea-04765729v1
Silver nanowire networks coated with a few nanometer thick aluminum nitride films for ultra-transparent and robust heating applications Dorina T. Papanastasiou,Arnaud Mantoux,Alexandre Crisci,Hugo Ribeiro,Abderrahime Sekkatet al. ACS Applied Nano Materials, 2024, 7 (11), pp.12312-12322. ⟨10.1021/acsanm.4c00044⟩ Article dans une revue hal-04728910v1
Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements J. Patouillard,R. Gassilloud,F. Mercier,A. Mantoux,R. Boichotet al. Journal of Vacuum Science & Technology A, 2023, 41 (5), pp.052201. ⟨10.1116/6.0002678⟩ Article dans une revue hal-04189163v1
Ti3SiC2-SiC multilayer thin films deposited by high temperature reactive chemical vapor deposition Jorge Sanchez Espinoza,Fatma Trabelsi,Christophe Escape,Ludovic Charpentier,Marc Fivelet al. Surface and Coatings Technology, 2022, 447, ⟨10.1016/j.surfcoat.2022.128815⟩ Article dans une revue hal-03762133v1
Green upconversion improvement of TiO2 codoped Er3+-Yb3+ nanoparticles based thin film by adding ALD-Al2O3 for silicon solar cell applications Fatma Trabelsi,Frédéric Mercier,Elisabeth Blanquet,Alexandre Crisci,Raphael Boichotet al. Journal of Luminescence, 2022, 252, pp.119282. ⟨10.1016/j.jlumin.2022.119282⟩ Article dans une revue hal-03807670v1
Coupling powder bed additive manufacturing and vapor phase deposition methods for elaboration of coated 3D Ti-6Al-4V architectures with enhanced surface properties A. Moll,J.-J. Blandin,R. Dendievel,E. Gicquel,M. Ponset al. Surface and Coatings Technology, 2021, 415, pp.127130. ⟨10.1016/j.surfcoat.2021.127130⟩ Article dans une revue hal-03262005v1
Asymmetry-Induced Redistribution in Sn(IV)–Ti(IV) Hetero-Bimetallic Alkoxide Precursors and Its Impact on Thin-Film Deposition by Metal–Organic Chemical Vapor Deposition Shashank Mishra,Erwann Jeanneau,Liang Tian,Ioana Nuta,Elisabeth Blanquetet al. Crystal Growth & Design, 2021, ⟨10.1021/acs.cgd.1c01136⟩ Article dans une revue hal-03510420v1
In situ x-ray studies of the incipient ZnO atomic layer deposition on In 0.53 Ga 0.47 As E. Skopin,L. Rapenne,J.L. Deschanvres,H. Renevier,E. Blanquetet al. Physical Review Materials, 2020, 4 (4), ⟨10.1103/PhysRevMaterials.4.043403⟩ Article dans une revue hal-02994857v1
Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire Sabine Lay,Frédéric Mercier,R. Boichot,G. Giusti,M. Ponset al. Journal of Materials Science, 2020, 55, pp.9152-9162. ⟨10.1007/s10853-019-04240-x⟩ Article dans une revue hal-02901657v1
Improved critical temperature of superconducting plasma-enhanced atomic layer deposition of niobium nitride thin films by thermal annealing Liang Tian,Ivane Bottala-Gambetta,Victor Marchetto,Manoël Jacquemin,Alexandre Crisciet al. Thin Solid Films, 2020, 709, pp.138232. ⟨10.1016/j.tsf.2020.138232⟩ Article dans une revue hal-02997691v1
Synthesis of upconversion TiO2:Er3+-Yb3+ nanoparticles and deposition of thin films by spin coating technique Fatma Trabelsi,Frédéric Mercier,Elisabeth Blanquet,Alexandre Crisci,Rached Salhi Ceramics International, 2020, 46 (18), pp.28183-28192. ⟨10.1016/j.ceramint.2020.07.317⟩ Article dans une revue hal-03000684v1
Chemical vapor deposition of titanium nitride thin films: kinetics and experiments Juan Su,Rapahel Boichot,Elisabeth Blanquet,Frederic Mercier,Michel Pons CrystEngComm, 2019, 21 (26), pp.3974-3981. ⟨10.1039/C9CE00488B⟩ Article dans une revue hal-02315144v1
Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering Fabien Rozé,Francois Pierre,Olivier Gourhant,François Bertin,Elisabeth Blanquetet al. Semiconductor Science and Technology, 2019, 34 (6), pp.065005. ⟨10.1088/1361-6641/ab171c⟩ Article dans une revue hal-02169850v1
Deposition and characterization of (Ti, Al)N coatings deposited by thermal LPCVD in an industrial reactor Florent Uny,Sofiane Achache,Salim Lamri,Jaafar Ghanbaja,Evelyne Fischeret al. Surface and Coatings Technology, 2019, 358, pp.923-933. ⟨10.1016/j.surfcoat.2018.12.014⟩ Article dans une revue hal-02119534v1
Influence of oxide density on O 2 diffusivity in thermally grown SiO 2 on Si and SiGe and on oxidation kinetics Fabien Rozé,Patrice Gergaud,Nicolas Jaouen,Olivier Gourhant,Elisabeth Blanquetet al. Semiconductor Science and Technology, 2019, 34 (6), pp.065023. ⟨10.1088/1361-6641/ab1228⟩ Article dans une revue hal-02169826v1
Impact of silica-substrate chemistry on tantalum nitride thin films deposited by atomic layer deposition: Microstructure, chemistry and electrical behaviors Fabien Volpi,Lionel Cadix,Gregory Berthomé,Stéphane Coindeau,Thierry Encinaset al. Thin Solid Films, 2019, 669, pp.392-398. ⟨10.1016/j.tsf.2018.10.006⟩ Article dans une revue hal-02050223v1
Superconducting properties of NbTiN thin films deposited by high-temperature chemical vapor deposition D. Hazra,N. Tsavdaris,A. Mukhtarova,M. Jacquemin,F. Blanchetet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (14), pp.5. ⟨10.1103/PhysRevB.97.144518⟩ Article dans une revue hal-02046421v1
Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition L. Tian,S. Ponton,M. Benz,A. Crisci,R. Reboudet al. Surface and Coatings Technology, 2018, 347, pp.181 - 190. ⟨10.1016/j.surfcoat.2018.04.031⟩ Article dans une revue hal-01809316v1
Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films F. Mercier,H. Shimoda,S. Lay,M. Pons,E. Blanquet CrystEngComm, 2018, 20 (12), pp.1711-1715. ⟨10.1039/c7ce02129a⟩ Article dans une revue hal-02067845v1
A comparative study of graphene growth on SiC by hydrogen-CVD or Si sublimation through thermodynamic simulations Roy Dagher,Elisabeth Blanquet,Christian Chatillon,Timotée Journot,Marc Portailet al. CrystEngComm, 2018, 20 (26), pp.3702 - 3710. ⟨10.1039/c8ce00383a⟩ Article dans une revue hal-01871982v1
The initial stages of ZnO atomic layer deposition on atomically flat In$_{0.53}$Ga$_{0.47}$As substrates Evgeniy Skopin,Laetitia Rapenne,Hervé Roussel,Jean-Luc Deschanvres,Elisabeth Blanquetet al. Nanoscale, 2018, ⟨10.1039/c8nr02440e⟩ Article dans une revue hal-01819188v1
HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process M. Pons,J. Su,M. Chubarov,R. Boichot,Florian Mercieret al. Journal of Crystal Growth, 2017, 468, pp.235 - 240. ⟨10.1016/j.jcrysgro.2017.01.002⟩ Article dans une revue hal-01656377v1
A Chemical Vapor Deposition Route to Epitaxial Superconducting NbTiN Thin Films N. Tsavdaris,D. Harza,S. Coindeau,G. Renou,F. Robautet al. Chemistry of Materials, 2017, 29 (14), pp.5824 - 5830. ⟨10.1021/acs.chemmater.7b00490⟩ Article dans une revue hal-01656288v1
Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation F. Roze,O. Gourhant,E. Blanquet,F. Bertin,M. Juhelet al. ECS Transactions, 2016, 75 (8), pp.67 - 78. ⟨10.1149/07508.0067ecst⟩ Article dans une revue hal-01656081v1
Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition D Hazra,N Tsavdaris,S Jebari,Alexander Grimm,F Blanchetet al. Superconductor Science and Technology, 2016, 29 (10), ⟨10.1088/0953-2048/29/10/105011⟩ Article dans une revue hal-01451259v1
Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition R. Boichot,L. Tian,M.-I. Richard,A. Crisci,A. Chakeret al. Chemistry of Materials, 2016, 28 (2), pp.592-600. ⟨10.1021/acs.chemmater.5b04223⟩ Article dans une revue hal-01366565v1
Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications L. Tian,A. Soum-Glaude,F. Volpi,L. Salvo,G. Berthomeet al. Journal of Vacuum Science & Technology A, 2015, 33 (1), ⟨10.1116/1.4904025⟩ Article dans une revue hal-01211353v1
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy A. Claudel,V. Fellmann,I. Gélard,N. Coudurier,D. Sauvageet al. Thin Solid Films, 2014, 573 (12), pp.140-147. ⟨10.1016/j.tsf.2014.11.022⟩ Article dans une revue istex hal-01121944v1
X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl-2-based inductively coupled plasma R. Chanson,S. Bouchoule,Christophe Cardinaud,C. Petit-Etienne,E. Cambrilet al. Journal of Vacuum Science and Technology, 2014, 32 (1), pp.011219. ⟨10.1116/1.4862256⟩ Article dans une revue hal-00963760v1
Experimental kinetic study of oxidation of uranium monocarbide powders under controlled oxygen partial pressures below 230 degrees C C. Berthinier,C. Rado,O. Dugne,M. Cabie,C. Chatillonet al. Journal of Nuclear Materials, 2013, 432 (1-3), pp.505-519. ⟨10.1016/j.jnucmat.2012.08.002⟩ Article dans une revue istex hal-00850222v1
CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation R. Boichot,N. Coudurier,Florian Mercier,A. Claudel,N. Baccaret al. Theoretical Chemistry Accounts: Theory, Computation, and Modeling, 2013, 133 (1), ⟨10.1007/s00214-013-1419-8⟩ Article dans une revue hal-00935012v1
Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer R. Boichot,N. Coudurier,Florian Mercier,S. Lay,A. Crisciet al. Surface and Coatings Technology, 2013, 237, pp.118-125. ⟨10.1134/s1063783413100211⟩ Article dans une revue istex hal-00935041v1
Growth of boron nitride on (0001) AlN templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE) N. Coudurier,R. Boichot,Florian Mercier,R. Reboud,S. Layet al. Physics Procedia, 2013, 46, pp.102-106. ⟨10.1016/j.phpro.2013.07.050⟩ Article dans une revue hal-00911142v1
New method to evaluate materials outgassing used in MEMS thin film packaging technology B. Savornin,X. Baillin,E. Blanquet,I. Nuta,D. Saint Patriceet al. Microelectronic Engineering, 2013, 107, pp.97-100. ⟨10.1016/j.mee.2012.12.002⟩ Article dans une revue istex hal-00850232v1
High temperature chemical vapor deposition of aluminum nitride, growth and evaluation M. Pons,R. Boichot,N. Coudurier,A. Claudel,E. Blanquetet al. Surface and Coatings Technology, 2013, 230, pp.111-118. ⟨10.1016/j.surfcoat.2013.06.011⟩ Article dans une revue istex hal-00935047v1
Analysis of the iodine gas phase produced by interaction of CsI and MoO&lt;sub&gt;3&lt;/sub&gt; vapours in flowing steam M. Gouello,H. Mutelle,F. Cousin,S. Sobanska,E. Blanquet Nuclear Engineering and Design, 2013, 263, pp.462 - 472. ⟨10.1016/j.nucengdes.2013.06.016⟩ Article dans une revue istex hal-00860999v1
Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy N. Coudurier,R. Boichot,V. Fellmann,A. Claudel,E. Blanquetet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2013, 3, pp.362-365. ⟨10.1002/pssc.201200686⟩ Article dans une revue istex hal-00911167v1
Significance of initial stages on the epitaxial growth of AlN using High Temperature Halide Chemical Vapor Deposition. M. Balaji,A. Claudel,V. Fellmann,I. Gélard,E. Blanquetet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2012, C9 ((3-4)), pp.511.514 Article dans une revue hal-00812202v1
Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature. Vincent Consonni,G. Rey,Hervé Roussel,B. Doisneau,E. Blanquetet al. Acta Materialia, 2012, 61 (1), pp.22-31. ⟨10.1016/j.actamat.2012.09.006⟩ Article dans une revue istex hal-00794225v1
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy. M. Balaji,A. Claudel,V. Fellmann,I. Gelard,E. Blanquetet al. Journal of Alloys and Compounds, 2012, 526, pp.103-109. ⟨10.1016/j.jallcom.2012.02.111⟩ Article dans une revue istex hal-00728110v1
Stability of High Temperature Chemical Vapor Deposited Silicon Based Structures on Metals for Solar Conversion. I. Gelard,G. Chichignoud,E. Blanquet,H.N. Xuan,R. Cruzet al. Journal of Nanoscience and Nanotechnology, 2011, 11 (9), pp.8318-8322. ⟨10.1166/jnn.2011.5077⟩ Article dans une revue hal-00664178v1
Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process. A. Claudel,E. Blanquet,D. Chaussende,R. Boichot,B. Doisneauet al. Journal of Crystal Growth, 2011, 335 (1), pp.17-24. ⟨10.1016/j.jcrysgro.2011.09.018⟩ Article dans une revue istex hal-00664176v1
Growth and Characterization of Thick Polycrystalline AlN Layers by HTCVD A. Claudel,E. Blanquet,D. Chaussende,R. Boichot,Roland Martinet al. Journal of The Electrochemical Society, 2011, 158 (3), pp.H328-H332. ⟨10.1149/1.3536477⟩ Article dans une revue hal-00640123v1
Aluminum nitride homoepitaxial growth on polar and non-polar AlN PVT substrates by high temperature CVD (HTCVD). A. Claudel,Y. Chowanek,E. Blanquet,D. Chaussende,R. Boichotet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (7-8), pp.2019-2021 Article dans une revue hal-00692267v1
Developments of TaN ALD Process for 3D Conformal Coatings V. Brize,T. Prieur,P. Violet,L. Artaud,G. Berthomeet al. Chemical Vapor Deposition, 2011, 17 (10-12), pp.284-295. ⟨10.1002/cvde.201100045AccessionNumber:WOS⟩ Article dans une revue hal-00664701v1
Experimental study of uranium carbide pyrophoricity Clément Berthinier,S. Coullomb,Cyril Rado,Elisabeth Blanquet,Raphaël Boichotet al. Powder Technology, 2011, 208 (2), pp.312-327. ⟨10.1016/j.powtec.2010.08.022⟩ Article dans une revue istex hal-00633937v1
Conformal Atomic Layer Deposition of TA-Based Diffusion Barrier Film Using a Novel Mono-Guanidinate Precursor. T. Prieur,V. Brize,T. Cornier,B. Doisneau,A. Farcyet al. Journal of Nanoscience and Nanotechnology, 2011, 11 (9), pp.8383-8386. ⟨10.1166/jnn.2011.5057⟩ Article dans une revue hal-00664179v1
Chemical vapour deposition and atomic layer deposition of amorphous and nanocrystalline metallic coatings: Towards deposition of multimetallic films E. Blanquet,A. Mantoux,M. Pons,Constantin Vahlas Journal of Alloys and Compounds, 2010, 504S, pp.422-424. ⟨10.1016/j.jallcom.2010.03.205⟩ Article dans une revue hal-00531708v1
Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices A. Lintanf-Salaun,A. Mantoux,E. Djurado,E. Blanquet Microelectronic Engineering, 2010, 87 (3), pp.373-378. ⟨10.1016/j.mee.2009.06.015⟩ Article dans une revue istex hal-00528040v1
Epitaxial and polycrystalline growth of AlN by high temperature CVD: Experimental results and simulation R. Boichot,A. Claudel,N. Baccar,A. Milet,E. Blanquetet al. Surface and Coatings Technology, 2010, 205 (5), pp.1294 - 1301. ⟨10.1016/j.surfcoat.2010.08.049⟩ Article dans une revue istex hal-01658032v1
ALD TaN from PDMAT in TSV Architectures Virginie Brizé,Laurent Artaud,Grégory Berthomé,Raphaël Boichot,S. Danieleet al. ECS Transactions, 2010, 33 (2), pp.183-193. ⟨10.1149/1.3485255⟩ Article dans une revue hal-00961033v1
Cracking study of pentakis(dimethylamino)tantalum vapors by Knudsen cell mass spectrometry P. Violet,I. Nuta,C. Chatillon,E. Blanquet Rapid Communications in Mass Spectrometry, 2010, 24 (2), pp.2949-2956. ⟨10.1002/rcm.4727⟩ Article dans une revue istex hal-00542911v1
High temperature chemical vapor deposition of AlN/W1−xRex coatings on bulk SiC F.Z. Roki,M. Pons,Florian Mercier,R. Boichot,C. Bernardet al. Surface and Coatings Technology, 2010, 205 (5), pp.1302-1306. ⟨10.1016/j.surfcoat.2010.08.107⟩ Article dans une revue istex hal-00547906v1
High-speed growth and characterization of polycrystalline AlN layers by High temperature Chemical Vapor Deposition (HTCVD). A. Claudel,E. Blanquet,D. Chaussende,Roland Martin,D. Piqueet al. ECS Transactions, 2009, 25 (8), pp.323-326 Article dans une revue hal-00457445v1
Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD A. Claudel,E. Blanquet,D. Chaussende,M. Audier,D. Piqueet al. Journal of Crystal Growth, 2009, 311 (13), pp.3371-3379. ⟨10.1016/j.jcrysgro.2009.03.053⟩ Article dans une revue hal-00408487v1
A special reactor coupled with a high-temperature mass spectrometer for the investigation of the vaporization and cracking of organometallic compounds P. Violet,I. Nuta,L. Artaud,H. Collas,E. Blanquetet al. Rapid Communications in Mass Spectrometry, 2009, 23, pp.793-800 Article dans une revue hal-00389421v1
Experimental thermodynamics for the evaluation of ALD growth processes. P. Violet,E. Blanquet,D. Monnier,I. Nuta,C. Chatillon Surface and Coatings Technology, 2009, 204 (6-7), pp.882-886. ⟨10.1016/j.surfcoat.2009.08.022⟩ Article dans une revue istex hal-00456226v1
PEALD ZrO2 films deposition on Ti and Si substrates D. Monnier,M. Gros-Jean,E. Deloffre,F. Volpi,E. Blanquet ECS Transactions, 2009, 25 (8), pp.235-241 Article dans une revue hal-00457447v1
Growth of thick AIN layers by high temperature CVD ('HTCVD) A. Claudel,E. Blanquet,D. Chaussende,M. Audier,D. Piqueet al. Materials Science Forum, 2009, 600-603, pp.1269-1272 Article dans une revue hal-00389378v1
Gaseous phase study of the Zr-organometallic ALD precursor TEMAZ by mass spectrometry D. Monnier,I. Nuta,C. Chatillon,M. Gros-Jean,F. Volpiet al. Journal of The Electrochemical Society, 2009, 156 (1), pp.71-75 Article dans une revue hal-00374416v1
Silicon Carbide growth : C/Si ratio Evaluation and Modeling M. Pons,S.I. Nishizawa,P. Wellmann,E. Blanquet,D. Chaussendeet al. Materials Science Forum, 2009, 600-603, pp.83-88 Article dans une revue hal-00389369v1
On gaseous phase of ALD precursors by means of thermodynamics. P. Violet,I. Nuta,C. Chatillon,E. Blanquet ECS Transactions, 2009, 25 (8), pp.567-573 Article dans une revue hal-00457446v1
Influence of total pressure and precursors flow rates on the growth of aluminum nitride by high temperature chemical vapor deposition (HTCVD) E. Blanquet,D. Chaussende,A. Claudel,D. Pique,M. Pons Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S348-S351 Article dans une revue hal-00432756v1
Thermodynamic and experimental study of UC powders ignition. F. Le Guyadec,C. Rado,S. Joffre,C. Chatillon,E. Blanquetet al. Journal of Nuclear Materials, 2009, 393 (2), pp.333-342. ⟨10.1016/j.jnucmat.2009.06.009⟩ Article dans une revue istex hal-00434236v1
Low-Temperature low-resistivity PEALD TiN using TDMAT under hydrogen redecing ambient P. Caubet,T. Blomberg,R. Benaboud,C. Wyon,E. Blanquetet al. Journal of The Electrochemical Society, 2008, 155 (8), pp.625-632 Article dans une revue hal-00374706v1
XPS studies of the ALD-growth of TaN diffusion barriers : Impact of the dielectric surface chemistry on the growth mechanism F. Volpi,L. Cadix,G. Berthomé,E. Blanquet,N. Jourdanet al. Microelectronic Engineering, 2008, 85 (10), pp.2068-2070 Article dans une revue hal-00345527v1
DNA microarrays on silicon nanostructures : Optimization of the multilayer stack for fluorescence detection C. Oillic,P. Mur,E. Blanquet,P. Delapierre,F. Vinetet al. Biosensors and Bioelectronics, 2007, 22 (9-10), pp.2086-2092 Article dans une revue hal-00141724v1
Chlorinated silicon carbide CVD revisited for polycristalline bulk growth G. Chichignoud,M. Ucar,M. Pons,E. Blanquet Surface and Coatings Technology, 2007, 201, pp.8888-8892 Article dans une revue hal-00114193v1
Knudsen cell mass spectrometry applied to the investigation of organometallic precursors vapours P. Violet,I. Nuta,C. Chatillon,E. Blanquet Surface and Coatings Technology, 2007, 201, pp.8813-8817 Article dans une revue hal-00196401v1
Chemical vapor deposition of thin films and coatings: Evaluation and process modeling C. Bernard,E. Blanquet,M. Pons Surface and Coatings Technology, 2007, 202, pp.790-797 Article dans une revue hal-00196412v1
Elaboration of Ta2O5 Thin Films Using Electrostatic Spray Deposition for Microelectronic Applications A. Lintanf,A. Mantoux,E. Blanquet,E. Djurado Journal of Physical Chemistry C, 2007, 111 (15), pp.5708-5714 Article dans une revue hal-00196396v1
High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding G. Chichignoud,M. Pons,E. Blanquet,D. Chaussende,M. Anikinet al. Surface and Coatings Technology, 2006, 201 (7), pp.4014-4020 Article dans une revue hal-00141052v1
Plasma etching of HfO&lt;sub&gt;2&lt;/sub&gt; at elevated temperatures in chlorine-based chemistry M. Helot,Thierry Chevolleau,L. Vallier,O. Joubert,Elisabeth Blanquetet al. Journal of Vacuum Science and Technology, 2006, 24 (1), pp.30-40. ⟨10.1116/1.2134707⟩ Article dans une revue hal-00397060v1
Ion beam analysis in advanced metallization R. Somatri-Bouamrane,N. Chevarier,A. Chevarier,A.M. Dutron,E. Blanquetet al. Journal of Electron Spectroscopy, 1997, 97, pp.741 Article dans une revue in2p3-00000122v1
Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics A.-M. Dutron,E. Blanquet,V. Ghetta,R. Madar,C. Bernard Journal de Physique IV Proceedings, 1995, 05 (C5), pp.C5-1141-C5-1148. ⟨10.1051/jphyscol:19955135⟩ Article dans une revue jpa-00253832v1
Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGex M. Pons,E. Blanquet,C. Bernard,H. Rouch,J. Dedulleet al. Journal de Physique IV Proceedings, 1995, 05 (C5), pp.C5-63-C5-70. ⟨10.1051/jphyscol:1995504⟩ Article dans une revue istex jpa-00253760v1
Tractable chemical models for CVD of silicon and carbon E. Blanquet,S. Gokoglu Journal de Physique IV Proceedings, 1993, 03 (C3), pp.C3-43-C3-49. ⟨10.1051/jp4:1993305⟩ Article dans une revue istex jpa-00251362v1
PROCESSING OF WSi2 FILMS BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION FROM IN SITU CHLORINATION OF METAL E. Blanquet,N. Thomas,P. Suryanarayana,C. Vahlas,C. Bernardet al. Journal de Physique IV Proceedings, 1991, 02 (C2), pp.C2-873-C2-880. ⟨10.1051/jp4:19912104⟩ Article dans une revue istex jpa-00249782v1
CHEMICAL VAPOR DEPOSITION OF TaSi2 AND WSi2 AT ATMOSPHERIC PRESSURE FROM IN SITU PREPARED METAL CHLORIDES E. Blanquet,C. Vahlas,C. Bernard,R. Madar,J. Palleauet al. Journal de Physique Colloques, 1989, 50 (C5), pp.C5-557-C5-563. ⟨10.1051/jphyscol:1989565⟩ Article dans une revue jpa-00229597v1

Communication dans un congrès (63)

Silicon and cellulose: influence of the substrate on the growth of ALD Al2O3 Hugo Patureau,Thierry Encinas,Alexandre Crisci,Frédéric Mercier,Erwan Gicquelet al. RAFALD 2024, Nov 2024, Nantes, France Communication dans un congrès hal-04828062v1
Growth of n-doped polycrystalline SiC thin films by chemical vapor deposition for brain-implantable devices Michalis Gavalas,Frédéric Mercier,E. Blanquet,Konstantinos Zekentes WOCSDICE-EXMATEC 2024, May 2024, Heraklion (Crete Island), Greece Communication dans un congrès hal-04819565v1
Thermodynamic simulations applied to Gas-Solid Materials Fabrication Processes E. Blanquet,Ioana Nuta Sadi Carnot's Legacy - "Celebrating the 200th anniversary of the 2nd law of thermodynamics", Ecole Polytechnique, Sep 2024, Palaiseau (Ecole Polytechnique), France Communication dans un congrès hal-05232379v1
Thermodynamics applied to gas – solid processes E. Blanquet,Ioana Nuta Sadi Carnot's Legacy - "Celebrating the 200th anniversary of the 2nd law of thermodynamics", Ecole Polytechnique, Sep 2024, Palaiseau (Ecole Polytechnique), France Communication dans un congrès hal-04819222v1
Atomic Layer Deposition Processes for emerging materials E. Blanquet International Seminar on Advances in Materials, Oct 2024, Madras (Chennai) - online, India Communication dans un congrès hal-04823817v1
Chemical vapor deposition of Ti3SiC2 thin films on SiC materials: process modeling and experiments Jorge Sanchez Espinoza,Fatma Trabelsi,Michalis Gavalas,Marc Fivel,E. Blanquetet al. ICSCRM2022, Oct 2022, Davos (Suisse), Switzerland Communication dans un congrès hal-04827901v1
Gaseous phase thermodynamics for TaN thin films Ioana Nuta,Arnaud Mantoux,Laurent Artaud,E. Blanquet CALPHAD 2022, CALPHAD, May 2022, STOCKHLOM, Sweden Communication dans un congrès hal-04896419v1
Growth of c-axis Textured AlN PVD Film on a 2D-MoS2 Seed Layer Julien Patouillard,E. Blanquet,Arnaud Mantoux,Frédéric Gianesello,Mathieu Bernardet al. AVS 68th international symposium & exhibition, Nov 2022, Pittburgh, Philadelphia, USA, United States Communication dans un congrès hal-04819507v1
Revisited Thermal and Plasma Enhanced Atomic Layer Deposition processes of metal nitrides E. Blanquet,Arnaud Mantoux,Frédéric Mercier,Raphaël Boichot,Ioana Nutaet al. ALD/ALE 2022, 22nd International Conference on Atomic Layer Deposition, Jun 2022, Ghent (BE), Belgium Communication dans un congrès hal-04819213v1
Ti3SiC2-SiC multilayer thin films deposited by High Temperature Reactive Chemical Vapor Deposition Jorge Sanchez Espinoza,Fatma Trabelsi,Ludovic Charpentier,E. Blanquet,Frédéric Mercier 48th International Conference on Metallurgical Coatings and Thin Films, ICMCTF 2022, May 2022, San Diego, United States Communication dans un congrès hal-04819400v1
Improvement of Mechanical Properties of Nanoparticles-Based Thin Films by Using Atomic Layer Deposition Fatma Trabelsi,Marc Fivel,Rached Salhi,Frédéric Mercier,E. Blanquet ALD 2021 - 21st International Conference on Atomic Layer Deposition, 2021, Virtual (On-line), France Communication dans un congrès hal-04819392v1
Stability enhancement of silver nanowire based transparent electrodes coated with metal nitride thin films by PE-ALD Dorina T. Papanastasiou,Arnaud Mantoux,Marceline Bonvalot,Hugo Ribeiro,Samia Belahcenet al. RAFALD 2021, Nov 2021, Marseille, France Communication dans un congrès hal-04614750v1
Study of the Impact of Annealing and Doping Element on the Crystallinity of Hafnium Oxide: Application for FeFET Memories Ivane Bottala-Gambetta,Mickael Gros-Jean,Arnaud Mantoux,Nicolas Vaxelaire,Stéphane Coindeauet al. ALD 2021 - 21st International Conference on Atomic Layer Deposition, 2021, Virtual / Online, France Communication dans un congrès hal-04819364v1
Revisited Thermal and Plasma Enhanced Atomic Layer Deposition combined with Chemical Vapor Deposition processes of metal nitrides: challenges and opportunities Elisabeth Blanquet,Arnaud Mantoux,Frédéric Mercier,Raphael Boichot,Ioana Nutaet al. MRS Fall Meeting, Symposium Advanced Atomic Layer Deposition and Chemical Vapor Deposition Techniques and Applications, Dec 2019, Boston, United States Communication dans un congrès hal-02414264v1
AlN coatings on 3D titanium alloy structureselaborated by Electron Beam Melting Adrien Moll,Erwan Gicquel,Melek Genc,Michel Pons,Rémy Dendievelet al. EuroCVD 22 – Baltic ALD 16, Jun 2019, Luxembourg, Luxembourg Communication dans un congrès hal-04757259v1
High temperature chemical vapor deposition of aluminum nitride thin films and coatings: properties and applications Michel Pons,Danying Chen,Manoel Jacquemin,Juan Su,Raphael Boichotet al. 2nd International Conference on materials science and engineering, Mar 2019, Cairo, Egypt Communication dans un congrès hal-02119556v1
Epitaxial 33°Y-oriented LiNbO3 films for Silicon Technology Ausrine Bartasyte,Oliveri S,Samuel Margueron,Romain Bachelet,Guillaume Saint-Gironset al. ISAF-EMF-ICE-IWPM-PFM meeting, Jul 2019, Lausanne, Switzerland Communication dans un congrès hal-02325566v1
From process modelling to the evaluation of superconducting properties of ultrathin films of epitaxial niobium nitride Manoël Jacquemin,E. Blanquet,M. Pons,Frédéric J. Mercier EuroCVD 22-Baltic ALD 16 Conference, Jun 2019, Luxemburg, Luxembourg Communication dans un congrès hal-04818728v1
ALD: opportunities and challenges E. Blanquet Chemistry of Atomic Layer Deposition, Belux 3 LIST, Mar 2018, Luxemburg, Luxembourg Communication dans un congrès hal-04818150v1
Advances in nitride film and coating growth by chemical vapor deposition Michel Pons,Danying Chen,Manoel Jacquemin,Juan Su,Raphael Boichotet al. 78th Japan Society of Applied Physics Conference, Sep 2017, Fukuoka, Japan Communication dans un congrès hal-01677320v1
Visualizing the incipient Atomic Layer Deposition of ZnO ultra thin films on In0.53Ga0.47As for tailoring contact resistivity E. Skopin,M.I. Richard,L. Rapenne,A. Crisci,E. Blanquetet al. E-MRS Spring 2017, May 2017, Strasbourg, France Communication dans un congrès hal-02016907v1
In situ X-ray studies during the early stage of ZnO Atomic Layer Deposition on InGaAs E Skopin,L. Rapenne,H. Roussel,J.-L. Deschanvres,A. Crisciet al. Rayons X & Matière, Nov 2017, Villeneuve d'Ascq, France Communication dans un congrès hal-02016916v1
In Situ X-ray Studies of Crystalline Texture and Strain During the Initial Stages of ZnO Atomic Layer Deposition R. Boichot,L. Tian,A. Claudel,E. Skopin,M.I. Richardet al. Workshop on synchrotron radiation to study atomic layer deposition, Jun 2016, ALBA synchrotron, Barcelona, Spain Communication dans un congrès hal-01453376v1
In Situ X-Ray Scattering and Optical Substrate Curvature Studies of ZnO Growth by Atomic Layer and Metal Organic Chemical Vapor Deposition Hubert Renevier,R. Boichot,A. Crisci,L. Tian,Ahmad Chakeret al. MRS spring meeting, Apr 2015, San Francisco, United States Communication dans un congrès hal-02016958v1
In-situ synchrotron analysis of the very first ALD growth steps of ZnO on a-SiO2 and c-plane Al2O3 R. Boichot,A. Crisci,S. Lay,E. Blanquet,L. Tianet al. Workshop RAFALD 2015, Nov 2015, Grenoble, France Communication dans un congrès hal-02016969v1
Functionalization of HTCVD Grown Aluminium Nitride M. Pons,R. Boichot,Florian Mercier,E. Blanquet International Conference on Semiconductor Materials and Devices (ISSMD-3), 2015, Chennai, India Communication dans un congrès hal-01138862v1
CVD of aluminium nitrides for high temperature applications Michel Pons,Raphael Boichot,Frederic Mercier,Elisabeth Blanquet International Conference on Crystal Growth (3CG), Nitrides for lighting, Photovoltaics and sensing applications, Dec 2015, Hong Khong, Japan Communication dans un congrès hal-01677329v1
CVD of silicon on steels for flexible solar cells M. Pons,G. Chichignoud,K. Zaidat,E. Blanquet Indian Conference on Crystal Growth, 2015, Chennai, India Communication dans un congrès hal-01138863v1
Combined Effects of Supersaturation and Stress for the Control of AlN Film Quality Raphael Boichot,Danying Chen,Frederic Mercier,Mikhail Chubarov,Elisabeth Blanquetet al. International Conference on Metallurgical Coatings and Thin Films (ICMCTF), " Hard Coatings and Vapor Deposition Technology, Apr 2017, San Diego, United States Communication dans un congrès hal-01677366v1
Functionalization of Aluminium Nitride Thin Films and Coatings M. Pons,R. Boichot,Florian Mercier,S. Lay,E. Blanquet International Conference on Metallurgical Coatings and Thin Films (ICMCTF), " Hard Coatings and Vapor Deposition Technology", 2015, San Diego, United States Communication dans un congrès hal-01138864v1
Various Applications of (Ti,Al)N Thin films Grown from a Vapor Phase E. Blanquet,Florian Mercier,H. Shimoda,S. Lay,M. Pons 3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand Communication dans un congrès hal-01138921v1
Functionalization of HTCVD Grown Aluminium Nitride M. Pons,R. Boichot,Florian Mercier,E. Blanquet,S. Layet al. 3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand Communication dans un congrès hal-01138861v1
Niobium Nitride Thin Films deposited by High Temperature Chemical Vapor Deposition Florian Mercier,S. Coindeau,S. Lay,A. Crisci,M. Benzet al. 3CG Collaborative Conference on Crystal Growth, 2014, Phuket, Thailand Communication dans un congrès hal-01138859v1
High temperature chemical vapor deposition of aluminum nitride, growth and evaluation M. Pons,R. Boichot,N. Coudurier,A. Claudel,E. Blanquetet al. European Conference on Chemical Vapor Deposition, EUROCVD19, 2013, Varna, Bulgaria Communication dans un congrès hal-00946648v1
Chemistry of iodine and aerosol composition in the primary circuit of a nuclear power plant M. Gouello,H. Mutelle,F. Cousin,S. Sobanska,E. Blanquet 21st International Conference Nuclear Energy for Europe, Sep 2012, Lubiana, Slovenia Communication dans un congrès hal-00779422v1
High Temperature Chemical Vapor Deposition of thick (5 to 20 mm) Aluminum nitride layers E. Blanquet,A. Claudel,S. Lay,R. Boichot,N. Coudurieret al. International Workshop on crystal growth and characterization of advanced materials and devices., Dec 2012, Chennai, India Communication dans un congrès hal-00812217v1
Atomic Layer Deposition of TiO2 ultrathin films on 3D substrates for energy applications Audrey Soum-Glaude,L. Tian,E. Blanquet,V. Brizé,L. Cagnonet al. MRS 2012, 2012, San Francisco CA, France. pp.63-68, ⟨10.1557/opl.2012.913⟩ Communication dans un congrès hal-00807357v1
HTCVD of silicon on steels for the development of inexpensive solar cells N. Dechoux,M. Naili,G. Chichignoud,E. Blanquet,Carmen Jiménezet al. 5th International Conference on Functional Materials, ISFM2012, Dec 2012, Perth, Australia. pp.28-30 Communication dans un congrès hal-00947072v1
Deposition of nanostructures by Atomic Layer Deposition E. Blanquet,A. Mantoux,R. Boichot,M. Pons International Workshop−CVD−Diagnostic−Modeling, Jun 2012, Nancy, France Communication dans un congrès hal-00812216v1
Thermodynamic simulations Applied to Gas-Solid Materials Fabrication Processes E. Blanquet,I. Nuta,R. Boichot,M. Pons Twenty Fourth National Seminar on crystal growth, Dec 2012, Chennai, India Communication dans un congrès hal-00812218v1
Chemistry of iodine and aerosol composition in the primary circuit of a nuclear power plant M. Gouello,M. Lacoue-Nègre,H. Mutelle,F. Cousin,S. Sobanskaet al. International Congress on Advances in Nuclear Power Plants, May 2011, Nice, France Communication dans un congrès hal-00639872v1
Plasma Enhanced Atomic Layer Deposition of ZrO2: A Thermodynamic Approach. E. Blanquet,D. Monnier,I. Nuta,F. Volpi,B. Doisneauet al. 219th ECS Meeting, May 2011, Montréal, Canada Communication dans un congrès hal-00692284v1
SiC and AlN growth processing : experiments and simulation. M. Pons,D. Chaussende,J.M. Dedulle,R. Boichot,E. Blanquet International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India Communication dans un congrès hal-00692283v1
Vapor phase processes: From HTCVD processes for high rate epitaxial growth to ALD processes for conformal ultra thin film fabrication. E. Blanquet (invitée),A. Claudel,V. Brizé,R. Boichot,D. Chaussendeet al. International Workshop on Wide Band Gap Semiconductor Nanostructures, Jan 2011, Chennai, India Communication dans un congrès hal-00692280v1
Numerical Simulation of SiC Growth processes: a characterization tool for the design of epitaxial structures in electronics M. Pons,S. Nishizawa,E. Blanquet,R. Boichot,D. Chaussende Renewable Energy 2010, Jun 2010, Yokohama, Japan Communication dans un congrès hal-00502036v1
Développements de dépôts ALD : expériences et évaluations thermodynamiques E. Blanquet,I. Nuta,V. Brize,R. Boichot,P. Violetet al. Matériaux 2010, Oct 2010, NANTES, France Communication dans un congrès hal-00591214v1
On the cracks formation in AlN films grown by chlorinated High Temperature Chemical Vapor Deposition. E. Latu-Romain,A. Claudel,Alexandre Crisci,E. Blanquet,Michel Mermouxet al. IWN 2010, Sep 2010, TAMPA, United States Communication dans un congrès hal-00610213v1
Developments of ALD Processes: Experiments and Thermodynamic Evaluations E. Blanquet,I. Nuta,V. Brize,R. Boichot,A. Mantouxet al. 218th ECS Meeting, Oct 2010, LAS VEGAS, NV, United States Communication dans un congrès hal-00591213v1
Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD) A. Claudel,D. Chaussende,E. Blanquet,D. Pique,M. Pons 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.987-990 Communication dans un congrès hal-00426590v1
Experimental and Thermodynamics for the Evaluation of ALD growth processes E. Blanquet,R. Boichot,C. Chatillon,A. Mantoux,I. Nutaet al. International Conference on Metallurgical Coatings and Thin Films (ICMCTF) 2009, 2009, United States Communication dans un congrès hal-00389286v1
The ways to deposit amorphous or nanocrystalline material from a vapor phase E. Blanquet,A. Mantoux,M. Pons 11th International Conference on Advanced Materials (ICAM), Sep 2009, Rio de Janeiro, Brazil Communication dans un congrès hal-00488887v1
Chemical Vapour Deposition and Atomic layer Deposition processes of amorphous or nanocrystalline thin films E. Blanquet,A. Mantoux,M. Pons,C. Vahlas International Symposium on Metastable, Amorphous and Nanostructured Materials (ISMANAM 2009), Jul 2009, Pékin, China. ⟨10.1016/j.jallcom.2010.03.205⟩ Communication dans un congrès hal-00488402v1
Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling M. Pons,S. Nishizawa,P. Wellmann,E. Blanquet,D. Chaussendeet al. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Kyoto, Japan. pp.83-88 Communication dans un congrès hal-00173481v1
Chemical Vapour Deposition processes of metallic amorphous or nanocrystalline thin films E. Blanquet,A. Mantoux,M. Pons,C. Vahlas World Premier Institute, AIMR (Advanced Institute of Materials Research) WPI-EUROPE-INPG on Metallic Glasses, Aug 2009, GRENOBLE, France Communication dans un congrès hal-00488885v1
Experimental ant Thermodynamics for the Evaluation of Atomic Layer Deposition processes. E. Blanquet,R. Boichot,A. Mantoux,C. Chatillon,I. Nutaet al. ICMCTF - international Conference Metallurgical Coatings and Thin Films, Apr 2009, SAN DIEGO, United States Communication dans un congrès hal-00488400v1
Growth of thick AlN layers by High Temperature CVD A. Claudel,E. Blanquet,D. Chaussende,M. Audier,D. Piqueet al. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2007, 2007, Otsu, Japan. pp.1269-1272 Communication dans un congrès hal-00337372v1
Knudsen cell mass spectrometry applied to the investigation of organometallic precursors vapours P. Violet,I. Nuta,C. Chatillon,E. Blanquet EUROCVD, Sep 2007, Netherlands. pp.8813-8817 Communication dans un congrès hal-00196653v1
Large grain polySiC boules for wafer-bounding G. Chichignoud,E. Blanquet,M. Anikin,J.M. Bluet,P. Chaudouëtet al. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. pp.71-74 Communication dans un congrès hal-00173118v1
High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding G. Chichignoud,M. Pons,E. Blanquet,D. Chaussende,M. Anikinet al. International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States Communication dans un congrès hal-00149073v1
SiC growth : evaluation and modeling M. Pons,S. Nishizawa,P. Wellmann,E. Blanquet,J. M. Dedulleet al. MRS Spring Meeting "B- Silicon Carbide – Materials, Processing and Devices", Apr 2006, San Francisco, United States. pp.64-77 Communication dans un congrès hal-00141104v1
High Temperature Silicon Carbide Chemical Vapor deposition processes: from pure thermodynamic to Mass transport modeling E. Blanquet,D. Chaussende,S. Nishizawa,M. Pons European conference on Computational Dynamics, Symposium, Sep 2006, Egmondaan Zee, Netherlands. pp.1-20 Communication dans un congrès hal-00141097v1
Oxydation et évaluation de la température d'inflammation de poudres d'UC et d'UN F. Le Guyadec,S. Joffre,C. Chatillon,E. Blanquet MATERIAUX 2006, 2006, Dijon, France. a paraitre Communication dans un congrès hal-00149057v1
Ion beam analysis of ternary silicides me-Si-N (Me = Re Ta Ti W) thin films used as diffusion barriers in advanced metallization R. Somatri-Bouamrane,N. Chevarier,A. Chevarier,A.M. Dutron,E. Blanquetet al. International Symposium on Chemical Vapor Deposition : CDV-XIV and EUROCVD11, Sep 1997, Paris, France. pp.1-8 Communication dans un congrès in2p3-00007487v1

Poster de conférence (7)

Atomic layer deposition onto nanocellulosic membranes to obtain high barrier materials Chloé Parisi,Lélia Boddaert,Hugo Patureau,Cécile Sillard,Erwan Gicquelet al. Colloque RAFALD 2025, Nov 2025, Grenoble, France Poster de conférence hal-05574691v1
Growth of polycrystalline SiC thin films by chemical vapor deposition for brain implanted electrodes Michalis Gavalas,Frédéric Mercier,Jorge Sanchez Espinoza,Clément Hébert,E. Blanquetet al. ICSCRM2022, Sep 2022, Davos (Suisse), Switzerland Poster de conférence hal-04827865v1
New potential synthesis route of molybdenum (oxy)nitride nanosheets by nitriding MoS_2 deposited by Atomic Layer Deposition (ALD) Julien Patouillard,E. Blanquet,Arnaud Mantoux,Frédéric Mercier,Frederic Gianeselloet al. ALD/ALE 2022, 22nd International Conference on Atomic Layer Deposition, Jun 2022, Ghent (BE), Belgium Poster de conférence hal-04819526v1
Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire Sabine Lay,Frédéric Mercier,Raphaël Boichot,Gael Giusti,Michel Ponset al. IIB2019, Intergranular and Interphase boundaries in materials, Jul 2019, Paris, France Poster de conférence hal-02358855v1
Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor Frédéric Mercier,Liang Tian,E. Blanquet,Ivane Bottala-Gambetta,Victor Marchettoet al. EuroCVD 22-Baltic ALD 16 Conference, Jun 2019, Luxemburg, Luxembourg Poster de conférence hal-04819554v1
Caractérisation de couches d’Al2O3 déposées par ALD thermique pour des applications photovoltaïques Corina Barbos,Alain Fave,Bruno Canut,Philippe Regreny,Claude Botellaet al. JNPV, Nov 2016, Dourdan, France Poster de conférence hal-02066922v1
Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor Frédéric Mercier,L. Tian,Ivan Bottala,V Marchetto,M Jacqueminet al. Eurocvd 20, Jul 2015, Sempach, Switzerland Poster de conférence hal-04757244v1

Chapitre d'ouvrage (2)

Ti-Al-N-Based Hard Coatings: Thermodynamical Background, CVD Deposition, and Properties. A Review Florent Uny,Elisabeth Blanquet,Frédéric Schuster,Frédéric Sanchette Jaime Andres Perez Taborda; Alba Avila. Coatings and Thin-Film Technologies, IntechOpen, 2019, ⟨10.5772/intechopen.79747⟩ Chapitre d'ouvrage hal-02283304v1
Thermodynamics simulations applied to gas-solid materials fabrication processes E. Blanquet,I. Nuta Thermodynamics - Fundamentals and its application in science, INTECH, pp.191-214, 2012, 979-953-307-836-5 Chapitre d'ouvrage hal-00824429v1

Brevet (2)

Method for functionalizing a polymer-based substrate by chemical deposition of a thin layer Erwan Gicquel,Frédéric Mercier,Raphaël Boichot,E. Blanquet,Evelyne Mauretet al. United States, Patent n° : 20230272522 - App. 18/006,335. 2023 Brevet hal-04402589v1
Structure adaptée à la formation de cellules solaires G. Chichignoud,E. Blanquet,I. Gelard,Carmen Jiménez,E. Sarigiannidouet al. France, N° de brevet: FR2971086 (A1). EPM. 2012 Brevet hal-00824463v1

Pré-publication, Document de travail (1)

Quantum critical scaling of the conductivity tensor at the metal-insulator transition in Nb$_{1-x}$Ti$_{x}$N D. Hazra,Prosenjit Haldar,M. S. Laad,N. Tsavdaris,A. Mukhtarovaet al. 2019 Pré-publication, Document de travail hal-02401451v1