ERIC FRAYSSINET
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Publications
Developing a Gallium Nitride Detector for High-Energy Proton Beam Dosimetry and Imaging2025 IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room-Temperature Semiconductor Detectors Symposium, Nov 2025, Yokohama, Japan. ⟨10.1109/NSS/MIC/RTSD57106.2025.11287133⟩
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hal-05455570
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Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterizationICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden
Communication dans un congrès
hal-05097968
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A Comparison Study of Substrates Quality for GaN Vertical DevicesInternational GaN4AP Workshop : GaN for Advanced Power Applications, Feb 2025, Catane, Italy
Communication dans un congrès
hal-04988232
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Probing Fermi Energy and Temperature-Dependent Shifts in Doped Homo-Epitaxial GaN Layers Using Micro-Raman SpectroscopyICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden
Communication dans un congrès
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Extraction de la résistance spécifique de contact pour des diodes PiN à base de GaN à 10 GHz18èmes Journées de Caractérisation Microondes et Matériaux, Mar 2025, Saint-Étienne, France
Communication dans un congrès
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From single detector to proton beam imaging systemIWN 2024, NC State University (USA), Nov 2024, Honolulu (Hawai'i), United States
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hal-04878003
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Carrier density analysis in stressed n-doped GaN layers on sapphireGaN Marathon, Jun 2024, Vérone, Italy
Communication dans un congrès
hal-04639487
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New photoresponse mode in GaN based detectorsIWN 2024, NC State University (USA), Nov 2024, Honolulu (Hawai'i), United States
Communication dans un congrès
hal-04877979
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Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devicese-MRS Fall Meeting, Sep 2024, Varsovie (Warsaw), Poland
Communication dans un congrès
hal-04855745
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Pseudo-vertical GaN-on-Sapphire PiN Diode: Process Optimizations and Electrical Properties2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.383-386, ⟨10.23919/EuMIC61603.2024.10732623⟩
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hal-04827187
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GaN-based Waveguide polariton lasers: from quasi-CW to mode-locked lasers14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Fukuoka, Japan
Communication dans un congrès
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Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvatureCompound Semiconductor Week 2023 (CSW 2023), May 2023, Jeju, South Korea
Communication dans un congrès
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Micro-Raman characterization of vertical GaN Schottky and PN diodes46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy
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Multiphysics Characterizations of Vertical GaN Schottky Diodes2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
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Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applicationsInternational Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
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hal-04037282
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Caractérisation par spectroscopie micro-Raman de diodes GaN SchottkyConférence Internationale Matériaux, Oct 2022, Lille, France
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hal-03844887
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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrateEuropean Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-04039596
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Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applicationsEXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
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MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODESPOWER 2021 (IMAPS), Nov 2021, Tours, France
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopyWocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Communication dans un congrès
hal-03284079
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Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodesWocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52
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hal-03275589
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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France
Communication dans un congrès
hal-04038119
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Développement technologique d'un HEMT normally- off avec une grille à barrière P-GaNSYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France
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hal-02918372
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Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland
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hal-02922723
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Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
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hal-04039402
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MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
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hal-04038786
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[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States
Communication dans un congrès
hal-04039430
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Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication CircuitsWOCSDICE 2019, Jun 2019, Cabourg, France
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hal-02502499
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Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVDInternational Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
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Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterréeSymposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
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hal-02981903
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On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩
Communication dans un congrès
hal-03276914
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Epitaxial growth of AlN thin films at low temperature by magnetron sputtering techniqueEuropean Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, 2013, Strasbourg, France
Communication dans un congrès
hal-00878878
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Strong exciton-photon coupling in ZnO microcavities : Promoting polariton physics up to 300K9th Japan-France Workshop on Nanomaterials, Nov 2010, Toulouse, France
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hal-00633295
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Interplay between bragg- and cavity-mode polaritons in a ZnO microcavityPhysics of Light-Matter Coupling in Nanostructures (PLMCN9), Apr 2009, Lecce, Italy
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