ERIC FRAYSSINET

111
Documents

Publications

Publications

Developing a Gallium Nitride Detector for High-Energy Proton Beam Dosimetry and Imaging

M Siviero , N Brosda , S Higueret , M Hugues , E Frayssinet et al.
2025 IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room-Temperature Semiconductor Detectors Symposium, Nov 2025, Yokohama, Japan. ⟨10.1109/NSS/MIC/RTSD57106.2025.11287133⟩
Communication dans un congrès hal-05455570 v1
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Stress and doping analysis of low n-doped GaN layers grown on GaN, silicon and sapphire substrates by micro-Raman 2. Physics and characterization

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Adrien Bidaud , Mohammed El Amrani , Thibaud Guillemin et al.
ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden
Communication dans un congrès hal-05097968 v1

A Comparison Study of Substrates Quality for GaN Vertical Devices

Pedro Fernandes Paes Pinto Rocha , Kevin Nadaud , Giuseppe Greco , Taoufik Slimani Tlemcani , Michal Bockowski et al.
International GaN4AP Workshop : GaN for Advanced Power Applications, Feb 2025, Catane, Italy
Communication dans un congrès hal-04988232 v1

Probing Fermi Energy and Temperature-Dependent Shifts in Doped Homo-Epitaxial GaN Layers Using Micro-Raman Spectroscopy

Aomar Ezza , Denis Machon , Ali Soltani , Camille Sonneville , Andreas Ruediger et al.
ICNS-15 - the 15th International Conference on Nitride Semiconductors, Jul 2025, Malmö, Sweden
Communication dans un congrès hal-05348023 v1
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Extraction de la résistance spécifique de contact pour des diodes PiN à base de GaN à 10 GHz

Zihao Lyu , Daniel Alquier , Quentin Paoli , Julien Ladroue , Arnaud Yvon et al.
18èmes Journées de Caractérisation Microondes et Matériaux, Mar 2025, Saint-Étienne, France
Communication dans un congrès hal-05150172 v1

From single detector to proton beam imaging system

Maxime Hugues , Matilde Siviero , Lucas Lesourd , Nicolas Couret , Eric Frayssinet et al.
IWN 2024, NC State University (USA), Nov 2024, Honolulu (Hawai'i), United States
Communication dans un congrès hal-04878003 v1
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Carrier density analysis in stressed n-doped GaN layers on sapphire

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Éric Frayssinet , Adrien Bidaud , Florian Bartoli et al.
GaN Marathon, Jun 2024, Vérone, Italy
Communication dans un congrès hal-04639487 v1

New photoresponse mode in GaN based detectors

Jean-Yves Duboz , Matilde Siviero , Maxime Hugues , Lucas Lesourd , Eric Frayssinet et al.
IWN 2024, NC State University (USA), Nov 2024, Honolulu (Hawai'i), United States
Communication dans un congrès hal-04877979 v1
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Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

M Dagher , Camille Sonneville , Dominique Planson , V Maurya , J Buckley et al.
e-MRS Fall Meeting, Sep 2024, Varsovie (Warsaw), Poland
Communication dans un congrès hal-04855745 v1

Pseudo-vertical GaN-on-Sapphire PiN Diode: Process Optimizations and Electrical Properties

Zihao Lyu , Jérôme Billoué , Kevin Nadaud , Julien Ladroue , Quentin Paoli et al.
2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.383-386, ⟨10.23919/EuMIC61603.2024.10732623⟩
Communication dans un congrès hal-04827187 v1

GaN-based Waveguide polariton lasers: from quasi-CW to mode-locked lasers

T. Guillet , H. Souissi , M. Gromovyi , I. Septembre , V. Develay et al.
14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Fukuoka, Japan
Communication dans un congrès hal-04802990 v1
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Thin-film blue light-emitting diodes for flexible device operation down to a millimetric radius of curvature

Jules Duraz , Edmond Cambril , Etienne Herth , Éric Frayssinet , Benjamin Damilano et al.
Compound Semiconductor Week 2023 (CSW 2023), May 2023, Jeju, South Korea
Communication dans un congrès hal-04683266 v1
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Micro-Raman characterization of vertical GaN Schottky and PN diodes

Camille Sonneville , Vishwajeet Maurya , Maroun Dagher , Adam Mohamed Kaywah , Eric Frayssinet et al.
46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2023), May 2023, Palerme, Italy
Communication dans un congrès hal-04170420 v1
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Multiphysics Characterizations of Vertical GaN Schottky Diodes

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès hal-03844585 v1
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Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications

Marie Lesecq , Éric Frayssinet , Marc Portail , Micka Bah , Nicolas Defrance et al.
International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
Communication dans un congrès hal-04037282 v1
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Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky

Camille Sonneville , Atse Julien Eric N’dohi , S Saidi , T H Ngo , P. de Mierry et al.
Conférence Internationale Matériaux, Oct 2022, Lille, France
Communication dans un congrès hal-03844887 v1

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq , Y. Fouzi , A. Abboud , N. Defrance , Francois Vaurette et al.
European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland
Communication dans un congrès hal-04039596 v1

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet et al.
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
Communication dans un congrès hal-03676503 v1

MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.
POWER 2021 (IMAPS), Nov 2021, Tours, France
Communication dans un congrès hal-03676940 v1
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Communication dans un congrès hal-03284079 v1
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Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes

Quentin Fornasiero , N. Defrance , Marie Lesecq , Eric Frayssinet , Yvon Cordier et al.
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.50-52
Communication dans un congrès hal-03275589 v1

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq , E. Frayssinet , Marc Portail , M Bah , N. Defrance et al.
13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France
Communication dans un congrès hal-04038119 v1
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Développement technologique d'un HEMT normally- off avec une grille à barrière P-GaN

Chaymaa Haloui , Gaëtan Toulon , Josiane Tasselli , Yvon Cordier , Éric Frayssinet et al.
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France
Communication dans un congrès hal-02918372 v2
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Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs

Chaymaa Haloui , Toulon Gaëtan , Josiane Tasselli , Yvon Cordier , Éric Frayssinet et al.
28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland
Communication dans un congrès hal-02922723 v1

Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate

M.R. Irekti , Marie Lesecq , N. Defrance , M. Boucherta , Eric Frayssinet et al.
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-04039402 v1

MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet , Luan Nguyen , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-04038786 v1

[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors

E. Frayssinet , L. Nguyen , Marie Lesecq , N. Defrance , R. Comyn et al.
13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States
Communication dans un congrès hal-04039430 v1

Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits

N. Defrance , Etienne Okada , Florent Albany , Nathalie Labat , Nathalie Malbert et al.
WOCSDICE 2019, Jun 2019, Cabourg, France
Communication dans un congrès hal-02502499 v1

Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

Christelle Brimont , Laetitia Doyennette , Farsane Tabataba-Vakili , I. Roland , M. El Kurdi et al.
International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
Communication dans un congrès hal-01952415 v1
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Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée

Audrey Chapelle , Éric Frayssinet , Yvon Cordier , Yohann Spiegel , Leïla Benmosfeta et al.
Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
Communication dans un congrès hal-02981903 v2

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Philippe Altuntas , N. Defrance , Marie Lesecq , Alain Agboton , Rezki Ouhachi et al.
9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.88-91, ⟨10.1109/EuMIC.2014.6997798⟩
Communication dans un congrès hal-03276914 v1

Epitaxial growth of AlN thin films at low temperature by magnetron sputtering technique

Julien Camus , Quentin Simon , Keltouma Aït Aïssa , Salma Bensalem , Laurent Le Brizoual et al.
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium J - Semiconductor nanostructures towards electronic and optoelectronic device applications IV, 2013, Strasbourg, France
Communication dans un congrès hal-00878878 v1

Strong exciton-photon coupling in ZnO microcavities : Promoting polariton physics up to 300K

Thierry Guillet , Stéphane Faure , Christelle Brimont , Thierry Bretagnon , Bernard Gil et al.
9th Japan-France Workshop on Nanomaterials, Nov 2010, Toulouse, France
Communication dans un congrès hal-00633295 v1

Interplay between bragg- and cavity-mode polaritons in a ZnO microcavity

Stéphane Faure , Christelle Brimont , Thierry Guillet , T. Bretagnon , B. Gil et al.
Physics of Light-Matter Coupling in Nanostructures (PLMCN9), Apr 2009, Lecce, Italy
Communication dans un congrès hal-00389907 v1

Deep-Level Transient Spectroscopy evaluation of epilayers grown on bulk GaN substrates for vertical devices

Pedro Fernandes Paes Pinto Rocha , Kevin Nadaud , Giuseppe Greco , Taoufik Slimani Tlemcani , Michal Bockowski et al.
15th International Conference on Nitride Semiconductors (ICNS-15), Jul 2025, Malmö, Sweden
Poster de conférence hal-05234860 v1
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VertiGO : Development and electrical characterization of fully-vertical GaN-on-GaN trench-MOSFETs for power applications

Valentin Ackermann , Blend Mohamad , Hala El Rammouz , Vishwajeet Maurya , Éric Frayssinet et al.
Journées scientifiques PEPR électronique, Mar 2025, Paris, France. 2025
Poster de conférence cea-05066366 v1
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Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.

Vishwajeet Maurya , Daniel Alquier , Hala El Rammouz , Pedro Fernandes Paes Pinto Rocha , Eugénie Martinez et al.
GaN Marathon 2024, Jun 2024, Verona, Italy. 2024
Poster de conférence cea-04667618 v1

First linear array of GaN diodes for high energy proton beam imaging

M. Siviero , M. Hugues , N. Couret , L. Lesourd , E. Frayssinet et al.
CSW, Jun 2024, Lund (Sweden), Sweden
Poster de conférence hal-04878966 v1
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Carrier density analysis in stressed n-doped GaN on sapphire layers

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Éric Frayssinet , Adrien Bidaud , Florian Bartoli et al.
GaN Marathon 2024, Jun 2024, Verona, Italy. 2024
Poster de conférence hal-05054677 v1

Gain modeling in InGaN / GaN microdisk lasers

Christelle BRIMONT , François Chiaruttini , Thierry Guillet , Farsane Tabataba-Vakili , Iannis Roland et al.
ICNS-13 — 13th International Conference on Nitride Semiconductors 2019, Jul 2019, Seattle (USA), Washington, United States
Poster de conférence hal-04793557 v1

Strong coupling of multiple branches polariton in a ZnO microcavity.

Stéphane Faure , Thierry Guillet , Christelle Brimont , Thierry Bretagnon , Pierre Lefebvre et al.
Int. Conf. On Optics of Excitons in Confined Systems - OECS11., Sep 2009, Madrid, Spain
Poster de conférence hal-00797194 v1
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Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment

Vishwajeet Maurya , Daniel Alquier , Hala El Rammouz , Pedro Fernandes Paes Pinto Rocha , Thomas Kaltsounis et al.
Power Electronic Devices and Components, 2025, 11, pp.100092. ⟨10.1016/j.pedc.2025.100092⟩
Article dans une revue hal-05201973 v1
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Imperfection in Semiconductors Leading to High Performance Devices

Jean‐yves Duboz , Matilde Siviero , Lucas Lesourd , Eric Frayssinet , Sebastien Chenot et al.
Advanced Science, 2025, 19, pp.e16270. ⟨10.1002/advs.202516270⟩
Article dans une revue hal-05447319 v1
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Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications

Ndembi Ignoumba-Ignoumba , Camille Sonneville , Adrien Bidaud , Pierre Brosselard , Eric Frayssinet et al.
Power Electronic Devices and Components, 2025, 11, pp.100100. ⟨10.1016/j.pedc.2025.100100⟩
Article dans une revue hal-05099383 v1
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Modeling and Extraction of the Specific Contact Resistance of GaN p-i-n Diodes up to 40 GHz

Kevin Nadaud , Zihao Lyu , Daniel Alquier , Quentin Paoli , Julien Ladroue et al.
IEEE Transactions on Electron Devices, 2025, 72 (4), pp.1657-1662. ⟨10.1109/TED.2025.3539644⟩
Article dans une revue hal-04949503 v1
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GaN diodes comparative study for high energy protons detection

Matilde Siviero , Maxime Hugues , Lucas Lesourd , Eric Frayssinet , Shirley Prado de La Cruz et al.
Journal of Semiconductors, 2025, 46 (9), pp.092503. ⟨10.1088/1674-4926/25020014⟩
Article dans une revue hal-05343726 v1

New insights in vertical GaN-on-GaN Schottky diode by Raman, cathodoluminescence and electrical characterizations

Vishwajeet Maurya , Daniel Alquier , Maroun Dagher , Camille Sonneville , Dominique Planson et al.
Materials Science in Semiconductor Processing, 2025, 198, pp.109681. ⟨10.1016/j.mssp.2025.109681⟩
Article dans une revue hal-05099324 v1

Alumina gate dielectric integration for fully-vertical GaN 2 MOSFETs

Valentin Ackermann , Blend Mohamad , Hala El Rammouz , Vishwajeet Maurya , Eric Frayssinet et al.
Energies, In press, 17
Article dans une revue cea-04724989 v1
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Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Micka Bah , Daniel Alquier , Marie Lesecq , Nicolas Defrance , Damien Valente et al.
Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩
Article dans une revue hal-04378667 v1
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Mode-locked waveguide polariton laser

Hassen Souissi , Maksym Gromovyi , Ismaël Septembre , Valentin Develay , Christelle Brimont et al.
Optica, 2024, 11 (7), pp.962-970. ⟨10.1364/OPTICA.524753⟩
Article dans une revue hal-04776451 v1
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Comparing post-deposition and post-metallization annealing treatments on Al<sub>2</sub>O<sub>3</sub>/GaN capacitors for different metal gates

Emanuela Schilirò , Giuseppe Greco , Patrick Fiorenza , Salvatore Ethan Panasci , Salvatore Di Franco et al.
AIP Advances, 2024, 14 (10), pp.105109. ⟨10.1063/5.0228323⟩
Article dans une revue hal-05201923 v1
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Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs

Valentin Ackermann , Blend Mohamad , Hala El Rammouz , Vishwajeet Maurya , Eric Frayssinet et al.
Electronics, 2024, 13 (12), pp.2350. ⟨10.3390/electronics13122350⟩
Article dans une revue hal-04673055 v1
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Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Shikha Kumari , Rashmi Singh , Shivam Kumar , N. V. L. Narasimha Murty , Dominique Planson et al.
Semiconductor Science and Technology, 2024, 39 (6), pp.065016. ⟨10.1088/1361-6641/ad4a65⟩
Article dans une revue hal-04574648 v2
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High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia , E. Frayssinet , M. Samnouni , V. Chinni , P. Mondal et al.
Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩
Article dans une revue hal-04115301 v1
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Fabrication, and direct current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero , Nicolas Defrance , Sylvie Lepilliet , Vanessa Avramovic , Yvon Cordier et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, 41 (1), pp.012202. ⟨10.1116/6.0002125⟩
Article dans une revue hal-03917965 v1
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Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Marianna Španková , Štefan Chromik , Edmund Dobročka , Lenka Pribusová Slušná , Marcel Talacko et al.
Nanomaterials, 2023, 13 (21), pp.2837. ⟨10.3390/nano13212837⟩
Article dans une revue hal-04791706 v1
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Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications

R. Elwaradi , E. Frayssinet , S. Chenot , Y. Bouyer , M. Nemoz et al.
Microelectronic Engineering, 2023, 277, pp.112017. ⟨10.1016/j.mee.2023.112017⟩
Article dans une revue hal-04240371 v1
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Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy

Maroun Dagher , Camille Sonneville , Georges Bremond , Dominique Planson , Eric Frayssinet et al.
Physica Status Solidi A (applications and materials science), 2023, ⟨10.1002/pssa.202200841⟩
Article dans une revue (article de synthèse) hal-04111725 v1
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Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , Philippe de Mierry et al.
Crystals, 2023, 13 (5), pp.713. ⟨10.3390/cryst13050713⟩
Article dans une revue hal-04099071 v1
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Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Giuseppe Greco , Patrick Fiorenza , Emanuela Schilirò , Corrado Bongiorno , Salvatore Di Franco et al.
Microelectronic Engineering, 2023, 276, pp.112009. ⟨10.1016/j.mee.2023.112009⟩
Article dans une revue hal-04092737 v1
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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq , Yassine Fouzi , Ali Abboud , N. Defrance , Francois Vaurette et al.
Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩
Article dans une revue hal-04084512 v1
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Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

F. Giannazzo , S.E. Panasci , E. Schilirò , G. Greco , F. Roccaforte et al.
Applied Surface Science, 2023, 631, pp.157513. ⟨10.1016/j.apsusc.2023.157513⟩
Article dans une revue hal-04248455 v1
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

B. Orfao , G. Di Gioia , B. Vasallo , S. Pérez , J. Mateos et al.
Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩
Article dans une revue hal-03741441 v1
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

P. Quach , A. Jollivet , A. Babichev , N. Isac , M. Morassi et al.
Applied Physics Letters, 2022, 120 (17), pp.171103. ⟨10.1063/5.0086641⟩
Article dans une revue hal-03823140 v1
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Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Hervé Morel , Luong Viet Phung et al.
Micro and Nanostructures, 2022, 172, pp.207433. ⟨10.1016/j.micrna.2022.207433⟩
Article dans une revue hal-04032160 v1
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Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks

Hui Zi , Yuk Fai Cheung , Benjamin Damilano , Eric Frayssinet , Blandine Alloing et al.
Optics Letters, 2022, 47 (6), pp.1521. ⟨10.1364/OL.449482⟩
Article dans une revue hal-03681897 v1
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Article dans une revue hal-03467546 v1

Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Luong Viet Phung , Thi Huong Ngo , Philippe de Mierry et al.
AIP Advances, 2022, 12 (2), pp.025126. ⟨10.1063/5.0082860⟩
Article dans une revue hal-03582833 v1
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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Maud Nemoz et al.
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
Article dans une revue hal-03741626 v1
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CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

Marc Portail , Eric Frayssinet , Adrien Michon , Stéphanie Rennesson , Fabrice Semond et al.
Crystals, 2022, 12 (11), pp.1605. ⟨10.3390/cryst12111605⟩
Article dans une revue hal-04240290 v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel et al.
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Article dans une revue hal-03826217 v1
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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq , Eric Frayssinet , Marc Portail , Micka Bah , N. Defrance et al.
Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩
Article dans une revue hal-03741438 v1
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Influence of surface roughness on the lasing characteristics of optically pumped thin-film GaN microdisks

Hui Zi , Yuk Fai Cheung , Benjamin Damilano , Eric Frayssinet , Blandine Alloing et al.
Optics Letters, 2022, 47 (6), pp.1521-1524. ⟨10.1364/ol.449482⟩
Article dans une revue hal-04285358 v1
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New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette , Bilal Hassan , Christophe Rodriguez , Eric Frayssinet , Rémi Comyn et al.
Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩
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Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Nedal Al Taradeh , Eric Frayssinet , Christophe Rodriguez , Frédéric Morancho , Camille Sonneville et al.
Energies, 2021, 14 (14), pp.4241. ⟨10.3390/en14144241⟩
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Whispering-gallery mode InGaN microdisks on GaN substrates

H Zi , W y Fu , F Tabataba-Vakili , H Kim-Chauveau , E Frayssinet et al.
Optics Express, 2021, 29, ⟨10.1364/oe.427727⟩
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Proton Energy Loss in GaN

Jean-Yves Duboz , Julie Zucchi , Eric Frayssinet , Sébastien Chenot , Maxime Hugues et al.
physica status solidi (b), 2021, 258 (8), pp.2100167. ⟨10.1002/pssb.202100167⟩
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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Thi Huong Ngo , Rémi Comyn , Sébastien Chenot , Julien Brault , Benjamin Damilano et al.
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
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Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform

Farsane Tabataba-Vakili , Blandine Alloing , Benjamin Damilano , Hassen Souissi , Christelle Brimont et al.
Optics Letters, 2020, 45 (15), pp.4276-4279. ⟨10.1364/OL.395371⟩
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Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

Benjamin Damilano , Marc Portail , Eric Frayssinet , Virginie Brändli , Florian Faure et al.
Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-76031-3⟩
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Analysis of low-threshold optically pumped III-nitride microdisk lasers

Farsane Tabataba-Vakili , Christelle Brimont , Blandine Alloing , Benjamin Damilano , Laetitia Doyennette et al.
Applied Physics Letters, 2020, 117, pp.121103. ⟨10.1063/5.0015252⟩
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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
Scientific Reports, 2020, 10 (1), pp.14166. ⟨10.1038/s41598-020-71064-0⟩
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Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Thi Huong Ngo , Rémi Comyn , Eric Frayssinet , Hyonju Chauveau , Sébastien Chenot et al.
Journal of Crystal Growth, 2020, 552, pp.125911. ⟨10.1016/j.jcrysgro.2020.125911⟩
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Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet , Luan Nguyen , Marie Lesecq , N. Defrance , Maxime Garcia Barros et al.
Physica Status Solidi A (applications and materials science), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩
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2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Mohamed-Reda Irekti , Marie Lesecq , N. Defrance , Etienne Okada , Eric Frayssinet et al.
Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩
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Demonstration of critical coupling in an active III-nitride microdisk photonic circuit on silicon

Farsane Tabataba-Vakili , Laetitia Doyennette , Christelle Brimont , Thierry Guillet , Stephanie Rennesson et al.
Scientific Reports, 2019, 9, pp.18095. ⟨10.1038/s41598-019-54416-3⟩
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III-nitride on silicon electrically injected microrings for nanophotonic circuits

Farsane Tabataba-Vakili , Stéphanie Rennesson , Benjamin Damilano , Eric Frayssinet , Jean-Yves Duboz et al.
Optics Express, 2019, 27 (8), pp.11800-11808. ⟨10.1364/OE.27.011800⟩
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Terahertz intersubband absorption of GaN/ AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

A Jollivet , M Tchernycheva , V Trinité , E Frayssinet , P de Mierry et al.
Applied Physics Letters, 2019, 115 (26), pp.261103. ⟨10.1063/1.5129362⟩
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High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Filippo Giannazzo , Giuseppe Greco , Emanuela Schilirò , Raffaella Lo Nigro , Ioannis Deretzis et al.
ACS Applied Electronic Materials, 2019, 1 (11), pp.2342-2354. ⟨10.1021/acsaelm.9b00530⟩
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GaN Schottky diodes for proton beam monitoring

Jean-Yves Duboz , Julie Zucchi , Eric Frayssinet , Patrick Chalbet , Sebastien Chenot et al.
Biomedical Physics & Engineering Express, 2019, 5 (2), pp.025015. ⟨10.1088/2057-1976/aaf9b4⟩
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Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Yvon Cordier , Rémi Comyn , Olivier Tottereau , Eric Frayssinet , Marc Portail et al.
Journal of Crystal Growth, 2019, 507, pp.220-225. ⟨10.1016/j.jcrysgro.2018.11.029⟩
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Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Yvon Cordier , Rémi Comyn , Éric Frayssinet , Mario Khoury , Marie Lesecq et al.
Physica Status Solidi A (applications and materials science), 2018, 215 (9), pp.1700637. ⟨10.1002/pssa.201700637⟩
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Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante , S. Rennesson , E. Frayssinet , L. Largeau , F. Semond et al.
Journal of Applied Physics, 2018, 123 (21), pp.215701. ⟨10.1063/1.5017550⟩
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Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

B. Damilano , Marie Lesecq , Di Zhou , Éric Frayssinet , Sebastien Chenot et al.
IEEE Photonics Technology Letters, 2018, 30 (17), pp.1567-1570. ⟨10.1109/LPT.2018.2858000⟩
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Blue Microlasers Integrated on a Photonic Platform on Silicon

Farsane Tabataba-Vakili , Laetitia Doyennette , Christelle Brimont , Thierry Guillet , Stephanie Rennesson et al.
ACS photonics, 2018, 5 (9), pp.3643. ⟨10.1021/acsphotonics.8b00542⟩
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Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Tasnia Hossain , Mohammad Junaebur Rashid , Eric Frayssinet , Nicolas Baron , Benjamin Damilano et al.
physica status solidi (b), 2018, 255 (5), pp.1700399. ⟨10.1002/pssb.201700399⟩
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A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Guillaume Gomme , Gaël Gautier , Marc Portail , Eric Frayssinet , Daniel Alquier et al.
Physica Status Solidi A (applications and materials science), 2017, 214 (4), pp.1600450. ⟨10.1002/pssa.201600450⟩
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Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

P Leclaire , E Frayssinet , C Morelle , Y Cordier , Didier Theron et al.
Journal of Micromechanics and Microengineering, 2016, 26 (10), pp.105015. ⟨10.1088/0960-1317/26/10/105015⟩
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GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Yvon Cordier , Benjamin Damilano , Phannara Aing , Catherine Chaix , Florence Linez et al.
Journal of Crystal Growth, 2016, 433, pp.165-171. ⟨10.1016/j.jcrysgro.2015.10.017⟩
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GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier , Éric Frayssinet , Magdalena Chmielowska , Maud Nemoz , Aimeric Courville et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩
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Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate

T. Hossain , J. Wang , E. Frayssinet , S. Chenot , M. Leroux et al.
Physica Status Solidi C: Current Topics in Solid State Physics, 2013, 10 (3), pp.425 - 428. ⟨10.1002/pssc.201200556⟩
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Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

David Schenk , Alexis Bavard , Eric Frayssinet , Xi Song , Frédéric Cayrel et al.
Applied Physics Express, 2012, 5 (2), pp.025504. ⟨10.1143/APEX.5.025504⟩
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Fabrication and Optical Properties of a Fully-Hybrid Epitaxial ZnO-Based Microcavity in the Strong-Coupling Regime

Laurent Orosz , François Réveret , Sophie Bouchoule , Jesús Zúñiga-Pérez , François Médard et al.
Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.072001. ⟨10.1143/APEX.4.072001⟩
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Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

Stéphane Faure , Christelle Brimont , Thierry Guillet , T. Bretagnon , B. Gil et al.
Applied Physics Letters, 2009, 95 (12), pp.121102. ⟨10.1063/1.3232228⟩
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Experimental observation of strong light-matter coupling in ZnO microcavities: influence of large excitonic absorption

François Médard , Jesús Zúñiga-Pérez , Pierre Disseix , Martine Mihailovic , Joël Leymarie et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.125302. ⟨10.1103/PhysRevB.79.125302⟩
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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier , Fabrice Semond , Jean-Christophe Moreno , Éric Frayssinet , Brahim Benbakhti et al.
Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩
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Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

Benjamin Damilano , Franck Natali , Julien Brault , Thomas Huault , Denis Lefebvre et al.
Applied Physics Express, 2008, 1, pp.121101. ⟨10.1143/APEX.1.121101⟩
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Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua , M. Laügt , P. Vennegues , I. Cestier , T. Gühne et al.
Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩
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Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier , P. Lorenzini , M. Hugues , F. Semond , F. Natali et al.
Journal de Physique IV Proceedings, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩
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Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates

Y. Cordier , M. Hugues , F. Semond , F. Natali , P. Lorenzini et al.
Journal of Crystal Growth, 2005, 278 (1-4), pp.383-386. ⟨10.1016/j.jcrysgro.2005.01.037⟩
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Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy.

Eric Frayssinet , Bernard Beaumont , Jean-Pierre Faurie , Pierre Gibart , Zsolt Makkai et al.
MRS Internet Journal of Nitride Semiconductor Research, 2002, 7, pp.8
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