Eric Joubert

Publications

Article dans une revue (19)

Toluene, styrene and methyl-ethyl-ketone inhalation: Effects on the power of cortical oscillations in rats E. Bernal Meléndez,Thomas Venet,A. Thomas,S. Boucard,L. Guenotet al. NeuroToxicology, 2025, 110, pp.31-41. ⟨10.1016/j.neuro.2025.07.001⟩ Article dans une revue hal-05261580v1
A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications Chawki Douzi,Moncef Kadi,Moncef Kadi,Pascal Dherbécourt,Mohamed Akram Besserouret al. Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩ Article dans une revue hal-03882052v1
PHM method for detecting degradation of GaN HEMT ON resistance, application to power converter H. Boulzazen,Chawki Douzi,Eric Joubert,Pascal Dherbécourt,Moncef Kadiet al. e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100060. ⟨10.1016/j.prime.2022.100060⟩ Article dans une revue hal-03872112v1
A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications Olivier Latry,Niemat Moultif,Eric Joubert,Mohamed Ndiaye e-Prime – Advances in Electrical Engineering, Electronics and Energy, 2022, 2, pp.100062. ⟨10.1016/j.prime.2022.100062⟩ Article dans une revue hal-04877849v1
Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating Niemat Moultif,Sébastien Duguay,O. Latry,M. Ndiaye,Eric Joubert Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩ Article dans une revue hal-03469148v1
Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress Niemat Moultif,Olivier Latry,Eric Joubert,Mohamed Ndiaye,Christian Moreauet al. IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩ Article dans une revue hal-03174499v1
Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics Wadia Jouha,Mohamed Lamine Masmoudi,Ahmed El Oualkadi,Eric Joubert,Pascal Dherbécourt IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩ Article dans une revue hal-03174373v1
In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation Wadia Jouha,Ahmed El Oualkadi,Pascal Dherbécourt,Mohamed Lamine Masmoudi,Joubert Eric IET Circuits, Devices & Systems, 2020, 14 (2), pp.222-228. ⟨10.1049/iet-cds.2018.5509⟩ Article dans une revue hal-04355283v1
Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy Niemat Moultif,Andres Echeverri,Dominique Carisetti,O. Latry,Eric Joubert IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩ Article dans une revue hal-02614080v1
An Improved SPICE Model for the Study of Electro-thermal Static Behavior for two New Generations of SiC MOSFET Wadia Jouha,Pascal Dherbécourt,Ahmed El Oualkadi,Eric Joubert,Mohamed Lamine Masmoudi International Journal of Information Science & Technology, 2019, ⟨10.57675/IMIST.PRSM/ijist-v3i1.44⟩ Article dans une revue hal-02295925v1
S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application Niemat Moultif,O. Latry,Mamadou Ndiaye,Tristan Neveu,Eric Joubertet al. Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩ Article dans une revue hal-02380186v1
Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm Wadia Jouha,Ahmed El Oualkadi,Pascal Dherbécourt,Eric Joubert,Mohamed Lamine Masmoudi IEEE Transactions on Power Electronics, 2018, 33 (11), pp.9130-9133. ⟨10.1109/TPEL.2018.2822939⟩ Article dans une revue hal-02177905v1
Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures Niemat Moultif,Alexis Divay,Eric Joubert,O. Latry Engineering Failure Analysis, 2017, 81, pp.69 - 78. ⟨10.1016/j.engfailanal.2017.07.014⟩ Article dans une revue hal-01766076v1
Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures Niemat Moultif,Eric Joubert,Mohamed Lamine Masmoudi,O. Latry Microelectronics Reliability, 2017, 76-77, pp.243 - 248. ⟨10.1016/j.microrel.2017.07.013⟩ Article dans une revue hal-01765955v1
Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy Niemat Moultif,Eric Joubert,O. Latry Advanced Electromagnetics, 2016, 5 (3), pp.20. ⟨10.7716/aem.v5i3.380⟩ Article dans une revue hal-02177964v1
Temperature and Dilatation Estimation for Modern Semiconductor Devices Eric Joubert,O. Latry,Jean-Philippe Roux Sensors & Transducers., 2015, 184 (1), pp.130-135 Article dans une revue hal-02178029v1
Comparison of different feedback signals used in one stage PMD compensators for different modulation formats Guillaume Ducournau,O. Latry,E. Joubert,M. Ketata IEEE Transactions on Communications, 2008, 56, pp.1722-1728. ⟨10.1109/TCOMM.2008.060476⟩ Article dans une revue hal-00356948v1
The chemistry of DeNOx reactions over Pt/Al2O3: the oxime route to N2 or N2O. E. Joubert,Xavier Courtois,Patrice Marecot,Christine Canaff,Daniel Duprez Journal of Catalysis, 2006, 243 (2), pp.252-262. ⟨10.1016/j.jcat.2006.07.018⟩ Article dans une revue hal-00289455v1
Magnetic susceptibility of P+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised M. Abdelaoui,M. Idrissi-Benzohra,E. Joubert,M. Benzohra,F. Oliviéet al. Materials Science and Engineering: B, 2003, 102 (1-3), pp.370-375. ⟨10.1016/S0921-5107(02)00623-2⟩ Article dans une revue istex hal-02138087v1

Communication dans un congrès (7)

Design of a High-Power Amplifier Using Wilkinson Power Divider/Combiner for S-band Applications Paula Akossiwa Atchike,Ahmed El Oualkadi,Pascal Dherbécourt,Eric Joubert 2025 33rd Mediterranean Conference on Control and Automation (MED), Jun 2025, Tangier, France. pp.532-535, ⟨10.1109/MED64031.2025.11073528⟩ Communication dans un congrès hal-05186030v1
Temperature estimation of high-electron mobility transistors AlGaN/GaN O. Latry,Eric Joubert,Tristan Neveu,Niemat Moultif,Mohamed Ndiaye 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.265-268, ⟨10.1109/MELCON.2018.8379105⟩ Communication dans un congrès hal-02131183v1
SiC MOSFET robustness to ESD study: Correlation between electrical and spectral photo-emission characterizations Niemat Moultif,Eric Joubert,Olivier Latry 2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), May 2018, Marrakech, France. pp.260-264, ⟨10.1109/MELCON.2018.8379104⟩ Communication dans un congrès hal-02181679v1
An Extraction Method of SiC Power MOSFET Threshold Voltage Ahmed Eloualkaki,Pascal Dherbécourt,Eric Joubert,Mohamed Lamine Masmoudi,Wadia Jouha 3rd International Conference on Electrical and Information Technologies, Nov 2017, Rabat, Morocco. ⟨10.1007/978-3-030-05276-8_2⟩ Communication dans un congrès hal-02295944v1
Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures Niemat Moultif,Eric Joubert,Mohamed Lamine Masmoudi,O. Latry 2017 Annual Reliability and Maintainability Symposium (RAMS), Jan 2017, Orlando, France. ⟨10.1109/ram.2017.7889732⟩ Communication dans un congrès hal-01765953v1
A new extraction method of SiC power MOSFET threshold voltage using a physical approach Wadia Jouha,Ahmed El Oualkadi,Pascal Dherbécourt,Eric Joubert,Mohamed Lamine Masmoudi 2017 International Conference on Electrical and Information Technologies (ICEIT), Nov 2017, Rabat, France. pp.1-6, ⟨10.1109/EITech.2017.8255289⟩ Communication dans un congrès hal-02177925v1
Static behavior analysis of silicon carbide power MOSFET for temperature variations Wadia Jouha,Pascal Dherbécourt,Eric Joubert,Ahmed El Oualkadi 2016 International Conference on Electrical and Information Technologies (ICEIT), May 2016, Tangiers, Morocco. pp.276-280, ⟨10.1109/EITech.2016.7519605⟩ Communication dans un congrès hal-02173722v1

Poster de conférence (1)

Analyse par électroluminescence des dégradations de transistor MOSFET en SiC Tien Anh Nguyen,Echeverri Andres,Mbarek Safa,Niemat Moultif,Pascal Dherbécourtet al. Symposium de Génie Electrique 2016 - SGE2016, Jun 2016, Grenoble, France Poster de conférence hal-01696225v1

Ouvrages (1)

An Extraction Method of SiC Power MOSFET Threshold Voltage W. Jouha,A. El Oualkadi,Pascal Dherbécourt,Joubert Eric,Mohamed Lamine Masmoudi Springer International Publishing, pp.11-20, 2019, Advances in Science, Technology & Innovation, ⟨10.1007/978-3-030-05276-8_2⟩ Ouvrages (manuel) hal-04815347v1

Chapitre d'ouvrage (3)

Reliability Study of High-Power Mechatronic Components by Spectral Photoemission Microscopy Niemat Moultif,Alexis Divay,Eric Joubert,O. Latry Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.241--271, 2017, ⟨10.1016/b978-1-78548-261-8.50008-5⟩ Chapitre d'ouvrage hal-01927247v1
Reliability and Qualification Tests for High-Power MOSFET Transistors Niemat Moultif,Mohamed Lamine Masmoudi,Eric Joubert,O. Latry Reliability of High-Power Mechatronic Systems 2, Elsevier, pp.155--197, 2017, ⟨10.1016/b978-1-78548-261-8.50005-x⟩ Chapitre d'ouvrage hal-01927246v1
Internal Temperature Measurement of Electronic Components Eric Joubert,Olivier Latry,Pascal Dherbécourt,Maxime Fontaine,Christian Gautieret al. Abdelkhalak El Hami & Philippe Pougnet (Eds). Embedded Mechatronic Systems 1, Elsevier, pp.165-184, 2015, 978-1-78548-013-3. ⟨10.1016/B978-1-78548-013-3.50007-3⟩ Chapitre d'ouvrage hal-02173702v1