
Eric TOURNIE
388
Documents
Publications
Publications
Interband cascade lasers emitting below 3 µm grown on GaAs substrateThe 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France
Communication dans un congrès
hal-04997754
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Reducing defect density in the epitaxy of III-Vs on Silicon substratesICG2025, Jan 2025, LECCE, Italy
Communication dans un congrès
hal-04907295
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Mid-IR GaSb-based lasers grown on Si platformsSPIE Photonics West 2025, SPIE, Jan 2025, San Francisco (CA, USA), United States
Communication dans un congrès
hal-04934677
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MBE growth of mid-IR interband cascade lasersThe 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France
Communication dans un congrès
hal-04997749
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Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonicsEUROMBE 2025, Mar 2025, Saint-Etienne-de-Tinée (06660), France
Communication dans un congrès
hal-04992077
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New InGaAsSb based T2SL for MWIR detectionThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès
hal-04738225
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Electron Channeling Contrast Imaging for epi-layer structural defect characterizationOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès
hal-04738266
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The direct epitaxial growth of III-Vs on Silicon substrateJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sete, France
Communication dans un congrès
hal-04737922
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Mid-infrared Semiconductor Lasers Grown on group-IV Platforms36th International Conference on the Physics of Semiconductors (ICPS 2024), Jul 2024, Ottawa (Ontario), Canada
Communication dans un congrès
hal-04754234
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Integration of mid-IR semiconductor lasers and Si-photonics circuits29th International Semiconductor Laser Conference, IEEE, Sep 2024, Orlando (FL), United States
Communication dans un congrès
hal-04740218
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Epitaxy of III-V semiconductors: some challenges and evolutionsOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès
hal-04660279
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Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networksThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès
hal-04737830
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Single mode distributed feedback interband cascade lasers grown on Si substrateNovel In-Plane Semiconductor Lasers XXIII, Jan 2024, San Francisco, United States. pp.53, ⟨10.1117/12.3003764⟩
Communication dans un congrès
hal-04996188
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Effect of a AlSb filter layer on threading dislocation density during GaSb-on-Si epitaxyDPG Frühjahrstagung (German Physical Society Spring Meeting), Mar 2024, Berlin, Germany
Communication dans un congrès
hal-04739768
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Revisiting the epitaxy of III-Vs on group-IV substratesThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès
hal-04737783
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Investigation of Intensity Noise in an Interband Cascade Laser Epitaxially Grown on Silicon and Designed for High-speed Applications2024 Conference on Lasers and Electro-Optics (CLEO 2024), May 2024, Charlotte, NC, United States
Communication dans un congrès
hal-04996211
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Direct epitaxy of lasers on Si: challenges and solutionsOSEPI : Epitaxie des oxydes et des semiconducteurs, May 2024, Fréjus, France
Communication dans un congrès
hal-04739852
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Type-I and type-II interband cascade lasers emitting below 3 µmCompound Semiconductor Week (CSW) 2024, Jun 2024, Lund, Sweden
Communication dans un congrès
hal-04739882
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Interband cascade lasers on mismatched substrates emitting above 4 µmThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2024, Matsue, Shimane, Japan
Communication dans un congrès
hal-04739914
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Understanding III-V/Si Heteroepitaxy: Experiments and Theory8th European conference on crystal growth, Jul 2024, Warsaw, Poland
Communication dans un congrès
hal-04745129
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Optimization of AlSb dislocation filter layer for GaSb-based quantum well lasers grown on Si(001)EMRS Spring Meeting, May 2024, Strasbourg, France
Communication dans un congrès
hal-04739759
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III-V/Si epitaxial growth and antiphase domains: a matter of symmetryOSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès
hal-04738319
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Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France
Communication dans un congrès
hal-04224975
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Near-field thermal radiation, thermophotovoltaics and polaritonsThermal Polaritonics Workshop, Apr 2023, Tokyo, France
Communication dans un congrès
hal-04310983
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Epitaxial integration of mid-infrared III-V devices on group-IV substratesE-MRS ( European Materials Research Society ) Fall Meeting 2023, Symposium A, E-MRS, Sep 2023, Warsaw, Poland
Communication dans un congrès
hal-04245650
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Integration of Mid-IR lasers and Si photonics circuitsEuropean Semiconductor Laser Workshop, University of Glasgow, Sep 2023, Glasgow, United Kingdom
Communication dans un congrès
hal-04245702
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GaSb-based ICLs grown on GaSb, GaAs and Si substratesMid-IR Optoelectronics: Materials and Devices XVI, Aug 2023, Norman, Oklahoma, United States
Communication dans un congrès
hal-04738303
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Mid-IR lasers epitaxially integrated onto Si45th Freiburg Infrared Colloquium, May 2023, Freiburg (Allemagne), Germany
Communication dans un congrès
hal-04121335
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Butt-coupling of semiconductor lasers and passive waveguides by direct epitaxy on patterned Si photonic wafersCompound Semiconductor Week 2023, May 2023, Jeju City, Jeju Island, South Korea
Communication dans un congrès
hal-04121366
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Low bandgap (near-field) TPV: materials and structuresThe 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States
Communication dans un congrès
hal-04156802
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Cascade lasers epitaxially grown on Silicon substratesInternational Quantum Cascade Lasers School and Workshop, Aug 2022, Zurich - Ascona, Switzerland
Communication dans un congrès
hal-03771073
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Controlling near-field thermal energy for conversion devices and sensingProgram on Emerging Regimes and Implications of Quantum and Thermal Fluctuational Electrodynamics (Flectro2022), Kavli Institute of Theoretical Physics (KITP), Jul 2022, UC Santa Barbara, United States. ⟨10.26081/K6R93X⟩
Communication dans un congrès
hal-03813941
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Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms2022 IEEE International Photonics Conference, Nov 2022, Vancouver, Canada. ⟨10.1109/IPC53466.2022.9975716⟩
Communication dans un congrès
hal-03906450
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Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains.22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom
Communication dans un congrès
hal-03806222
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Solid-state/optical alternatives to thermoelectricity for thermal-to-electrical energy conversion18th European Conference on Thermoelectrics (ECT), Oct 2022, Barcelona, Spain
Communication dans un congrès
hal-03813779
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Low-energy bandgap thermophotovoltaic cells for harnessing near-field thermal photonsC’Nano 2020, The Nanoscience meeting, Nov 2021, Toulouse, France
Communication dans un congrès
hal-03457483
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Low-energy bandgap thermophotovoltaic cells for medium-grade heat sources2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France
Communication dans un congrès
hal-03437899
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Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom
Communication dans un congrès
hal-03336838
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Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layersCompound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm (online), Sweden
Communication dans un congrès
hal-03358749
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Analysis of the coupling efficiency between monolithically integrated GaSb laser diodes and SiNx waveguides15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom
Communication dans un congrès
hal-03336700
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Toward mid-infrared laser diodes on Silicon photonic integrated circuitsCLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès
hal-03336233
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Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronicsWebinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India
Communication dans un congrès
hal-03588366
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Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applicationsCLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès
hal-03336249
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Efficient near-field thermophotovoltaic conversion with InSb cells2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France
Communication dans un congrès
hal-03438226
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MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano), Aug 2021, Milano (on line), Italy
Communication dans un congrès
hal-03336686
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Etched-facets Mid-IR laser on on-axis Silicon substrate for photonic integrated circuitsSemiconductor and Integrated Optoelectronics Conference, Mar 2021, on line, United Kingdom
Communication dans un congrès
hal-03187613
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Sb-based Mid-IR lasers grown by MBE on Silicon(001)21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico
Communication dans un congrès
hal-03377236
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Near-field thermophotovoltaic conversion with high electrical power density and efficiency above 14%MRS Spring meeting, Symposium "Nanoscale heat transport", Apr 2021, Seattle (remote), United States
Communication dans un congrès
hal-03649749
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Mid-infrared III-V semiconductor lasers grown on (001)Silicon substrates2021 IEEE Summer Topicals Meeting Series, Jul 2021, On line, United States
Communication dans un congrès
hal-03336669
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Mid-IR lasers epitaxially grown on on-axis (001) SiliconNovel In-Plane Semiconductor Lasers XX, Mar 2021, Online Only, United States. pp.35, ⟨10.1117/12.2576790⟩
Communication dans un congrès
hal-03184742
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Mid-infrared laser diodes grown on various on-axis III-V-on-Si templatesCompound Semiconductor Week (CSW2021), May 2021, Stockholm (on line), Sweden
Communication dans un congrès
hal-03336846
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Mid-IR lasers monolithically integrated on on-axis SiliconCLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès
hal-03336448
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Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico
Communication dans un congrès
hal-03336876
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Is a substrate miscut really required for high quality III-V/Si monolithic integration?21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès
hal-03402689
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Efficient near-field thermophotovoltaic conversion with InSb cellsSFT "Nanoscale Heat Transport Days", Jan 2020, Paris, France
Communication dans un congrès
hal-02459116
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Mid-IR lasers sources monolithically integrated on Si substratesSPIE Photonex & Vacuum Expo Digital Forum, Emerging Applications in Silicon Photonics, SPIE, Oct 2020, on line, United Kingdom
Communication dans un congrès
hal-03184754
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Recent advances in near-field thermophotovoltaicssTE2C virtual colloquium, Daniele M. Trucchi, Gaspare Varvaro (CNR-ISM, Roma, Italy), Nov 2020, Online, Italy
Communication dans un congrès
hal-03018774
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Progress in Interband Cascade Lasers: from edge emitting lasers to VCSELs2020 22nd International Conference on Transparent Optical Networks (ICTON), Jul 2020, Bari, Italy. pp.1-4, ⟨10.1109/ICTON51198.2020.9203274⟩
Communication dans un congrès
hal-02996714
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Mid-IR lasers epitaxially grown on siliconGDR nanoTERAMIR, Jun 2019, Agay, France
Communication dans un congrès
hal-02342614
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Molecular-beam epitaxy of GaInSbBi alloys and QWs10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Communication dans un congrès
hal-02327216
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Study of In incorporation into GaSbBi alloys20th European Workshop on Molecular Beam Epitaxy, 2019, Lenggries, Germany
Communication dans un congrès
hal-02327229
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Towards MIR VCSELs operating in CW at RTCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. ⟨10.1109/iciprm.2019.8819164⟩
Communication dans un congrès
hal-03012184
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Characterization and numerical analysis of III-Sb tandem solar cellsJournées Nationales du Photovoltaïque, Dec 2019, Dourdan, France
Communication dans un congrès
hal-02382568
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InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation)Quantum Sensing and Nano Electronics and Photonics XVI, Feb 2019, San Francisco, United States. pp.10926-41
Communication dans un congrès
hal-02342613
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Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substratesThe 9th International Symposium on Photonics and Electronics Convergence, Nov 2019, Tokyo, Japan
Communication dans un congrès
hal-02383950
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Transmission Electron Microscopy of (In,Ga)(Sb,Bi) epilayers and quantum wells10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Communication dans un congrès
hal-02327205
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Near-field radiative heat transfer measurements between a sphere and a substrate: large temperature differences, geometrical effects and materialsMRS Spring Meeting Symposium "Nanoscale Heat Transport: Fundamentals", Apr 2019, Phoenix, United States
Communication dans un congrès
hal-02043071
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Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrateQSIP2018, Jun 2018, Stockholm, Sweden. pp.39-43, ⟨10.1016/j.infrared.2018.10.006⟩
Communication dans un congrès
hal-01947798
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Near-field thermophotovoltaic conversion with InSb cellsE-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics, Sep 2019, Varsovie, Poland
Communication dans un congrès
hal-02379726
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Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cellsForum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy
Communication dans un congrès
hal-02382507
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Near-field radiative heat transfer experiments and thermophotovoltaic conversionFocus Session on « Fluctuational Electrodynamics and Heat Transfer », Progress In Electromagnetism Research (PIERS) 2019 conference, Jun 2019, Rome, Italy
Communication dans un congrès
hal-02043078
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GaSb materials and devices: the IR optoelectronics toolboxInternational Nano-Optoelectronics Workshop (iNOW 2019), Jul 2019, Guangzhou - Shenzhen, China
Communication dans un congrès
hal-02342610
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Mesures expérimentales du transfert radiatif en champ proche et de la conversion thermophotovoltaïqueJournées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
Communication dans un congrès
hal-02043083
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Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11
Communication dans un congrès
hal-02342612
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Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France
Communication dans un congrès
hal-02382578
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès
hal-02048639
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Epitaxial Integration of GaSb-based mid-IR devices on SiliconLight Conference 2019, Jul 2019, Changchun, China
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hal-02342611
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Design of efficient photovoltaic cells for near-field thermophotovoltaicsEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Communication dans un congrès
hal-02021380
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Sb-based IR Detector and Emitter MaterialsSb-based IR Detector and Emitter Materials, CSWeek 2018, 2018, Boston, United States
Communication dans un congrès
hal-02078599
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Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès
hal-01910556
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
Communication dans un congrès
hal-01954906
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GaSb materials and devices: the IR toolboxUK Semiconductors, 2018, Sheffield, United Kingdom
Communication dans un congrès
hal-02078273
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Antimonide-based optoelectronic devices epitaxially grown on SiliconInternational nano-optoelectronics workshop (iNOW 2018), 2018, Berkeley, United States
Communication dans un congrès
hal-02078268
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion5th International Conference on Near-Field Optics, Nanophotonics and Related Techniques (NFO), Aug 2018, Troyes, France
Communication dans un congrès
hal-02025479
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(114) GaP surface texturation on Si for water splittingEMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01708047
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III-V semiconductor plasmonics for microfluidic molecular sensingFinal conference of PROMIS, Photonics by the Lake, 2018, Windermere, United Kingdom
Communication dans un congrès
hal-02084307
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Mid-IR Optoelectronic devices epitaxially grown on SiliconMid-IR Optoelectronic devices epitaxially grown on Silicon, CLEO 2018, 2018, San Jose, United States
Communication dans un congrès
hal-02078610
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On the origin of defects during III-Sb epitaxy on Si(001)2018 E-MRS Spring meeting, Symposium V, 2018, Strasbourg, France
Communication dans un congrès
hal-02078642
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependenceGDRe workshop on Thermal Nanosciences and NanoEngineering, Oct 2018, Lyon, France
Communication dans un congrès
hal-01932675
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Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018, Flagstaff, United States
Communication dans un congrès
hal-02078153
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01910535
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01910543
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Quantum cascade lasers grown on silicon18th Int. Conf. on Laser Optics, 2018, St Petersburg, Russia
Communication dans un congrès
hal-02078298
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Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cellsJournées Nationales du Photovoltaïque, Dec 2018, Dourdan, France
Communication dans un congrès
hal-02061904
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Plasmonique tout-semi-conducteur pour les applications du moyen-infrarougeCongrès de la Société Française d’Optique, 2018, Toulouse, France
Communication dans un congrès
hal-02084338
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Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells20th International Conference on Molecular-Beam Epitaxy (MBE 2018), 2018, Shanghai, China
Communication dans un congrès
hal-02078204
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AlInAsSb for GaSb-based multi-junction solar cellsPhotonics West 2018, 2018, San Francisco, United States
Communication dans un congrès
hal-02080336
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès
hal-01910554
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GaP Template on Si for Solar Water Splitting: surface energy engineeringnanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès
hal-01909068
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Mid-Infrared 2.7 µm GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure14th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2018, Flagstaff, United States
Communication dans un congrès
hal-02327248
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GaSb-based lasers in the telecom wavelength range monolithically integrated on SiECOC 2018, Workshop on Integrated Photonics, 2018, Rome, Italy
Communication dans un congrès
hal-02078228
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Surface enhanced infrared absorption with highly doped InAsSb plasmonic nanostructuresGDR NanoTeraMIR, 2018, Montpellier, France
Communication dans un congrès
hal-02084508
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Thermophotovoltaic devices for solar and thermal energy conversionJournées Nationales sur l'Énergie Solaire «Congrès JNES 2018», Jun 2018, Villeurbanne, France
Communication dans un congrès
hal-01841462
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Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942
Communication dans un congrès
hal-02052823
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Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependenceEurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Communication dans un congrès
hal-02021385
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Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïqueJournées Nationales sur l’Energie Solaire, Jun 2018, Villeurbanne, France
Communication dans un congrès
hal-01832256
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Metamorphic III-Sb lasers epitaxially grown on Si substratesInternational School on Epitaxial Technologies of Novel materials and Nanostructures, 2017, St. Petersburg, Russia
Communication dans un congrès
hal-01905208
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Lasers à semiconducteurs intégrés sur SiliciumJournées Nationales sur l’Optique Guidée (JNOG), 2017, Limoges, France
Communication dans un congrès
hal-01905155
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Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès
hal-01891383
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High Bi-content GaSbBi alloys for mid-IR applicationsCSWeek 2017, 2017, Berlin, Germany
Communication dans un congrès
hal-01905735
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Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany
Communication dans un congrès
hal-01905702
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GaSb-based lasers epitaxially grown on SiE-MRS Fall meeting, Symposium, 2017, Warsaw, Poland
Communication dans un congrès
hal-01905141
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Surface enhanced infrared absorption with highly doped InAsSb plasmonic nano-antenna arraysNanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain
Communication dans un congrès
hal-01905761
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Mid-IR surface enhanced absorption spectroscopy with 1D Highly Si-Doped InAsSb nano-antennasE-MRS Spring Meeting, 2017, Strasbourg, France
Communication dans un congrès
hal-01905789
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Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applicationsE-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
Communication dans un congrès
hal-01905730
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GaSbBi/GaSb quantum well laser diodes8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany
Communication dans un congrès
hal-02327190
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Plasmonic bio-sensing based on highly doped semiconductorsOptics + Photonics (SPIE), 2017, San Diego, United States
Communication dans un congrès
hal-01905149
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Communication dans un congrès
hal-01708282
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Metamorphic III-Sb lasers epitaxially grown on Silicon19th European Workshop on Molecular-Beam Epitaxy, (Euro-MBE 2017), 2017, St. Petersburg, Russia
Communication dans un congrès
hal-01905184
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GaSbBi alloys for mid-infrared optoelectronicsFreiburg Infrared Colloqium, 2017, Freiburg, Germany
Communication dans un congrès
hal-01905746
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Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France
Communication dans un congrès
hal-01891389
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GaSb oxidation for plasmonic enhanced mid-IR molecular spectroscopyNanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain
Communication dans un congrès
hal-01905752
v1
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MBE growth of periodically-oriented GaSb on GaAs templates for frequency conversion in the mid-infrared wavelength range19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès
hal-01903697
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GaSb lasers grown on Silicon substrate for telecom application19th Conference on Molecular Beam epitaxy (MBE2014), 2016, Montpellier, France
Communication dans un congrès
hal-01903740
v1
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Brewster mode : optical monitoring of the semiconductor doping levelPhotonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès
hal-01903684
v1
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Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2016, Beijing, China
Communication dans un congrès
hal-02327267
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Surface-enhanced infrared absorption using highly doped InAsSb/GaSb Nanostructures2016 MRS (Material Research Society) Fall Meeting, 2016, Boston, United States
Communication dans un congrès
hal-01903778
v1
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Highly doped InAsSb nanoribbon on GaSb for plasmonics applications13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2016, Beijing, China
Communication dans un congrès
hal-01903751
v1
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Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructuresPhotonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès
hal-01903606
v1
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GaSb grown by molecular beam epitaxy on silicon substrates19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès
hal-01903638
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GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range43rd Int. Symp. on Compound Semiconductors (ISCS 2016), 2016, Toyama, Japan
Communication dans un congrès
hal-01903723
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On the origin of threading dislocations during III-Sb epitaxy on Si(001)19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès
hal-01903706
v1
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Highly doped InAsSb plasmonic arrays for mid-infrared biosensingIEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France
Communication dans un congrès
hal-01903761
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First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infraredSPIE Photonics Europe, 2016, Brussels, France. ⟨10.1117/12.2225441⟩
Communication dans un congrès
hal-01759576
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3.8 μm Heterogeneously Integrated III-V on Silicon Micro-Spectrometer18th European Conference on Integrated Optics, 2016, Warsaw, Poland
Communication dans un congrès
hal-01903732
v1
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GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès
hal-01903690
v1
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All semiconductor plasmonics for bio-sensingInternational Conference on Energy, Materials & Photonics, 2016, Troyes, France
Communication dans un congrès
hal-01903594
v1
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Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys19th International Conference on Molecular Beam Epitaxy, 2016, Montpellier, France
Communication dans un congrès
hal-02327261
v1
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III-V lasers monolithically grown on SiliconIEEE Photonics Conference, 2016, Orlando, United States
Communication dans un congrès
hal-01905127
v1
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GaInSb/AlInSb coupled QWs on GaSb for telecom laserSPIE Photonics West, Opto-2015, Novel In-Plane Semiconductor Lasers XIV, 2015, San Francisco, United States
Communication dans un congrès
hal-01903574
v1
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Observation of Fano resonances in highly doped semiconductor plasmonic resonatorsSPIE NanoScience + Engineering, 2015, San Diego, United States
Communication dans un congrès
hal-01903562
v1
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Brewster “mode” or how to optically monitor the doping concentration in highly doped semiconductor layersMETA15 Conference, 2015, New York, United States
Communication dans un congrès
hal-01903564
v1
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Highly doped semiconductor plasmonics for mid-IR applications7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel
Communication dans un congrès
hal-01903569
v1
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GaSb-based MIR semiconductor materials and lasersIEEE 2015 Summer Topicals Meeting Series, 2015, Nassau, Bahamas
Communication dans un congrès
hal-01903509
v1
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Terahertz studies of 2D and 3D topological transitions19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩
Communication dans un congrès
hal-01249953
v2
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New Index-Coupled Distributed-Feedback Gasb-Based Lasers Diodes In The 2 to 3 µm Wavelength Range. Applications To Spectroscopy3rd International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing (MIRSENS 3), Mar 2015, Würzburg, Germany
Communication dans un congrès
hal-01795440
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1.55 µm GaSb-based lasers monolithically grown on Si substrates18th Conference on Molecular Beam epitaxy (MBE2014), 2014, Flagstaff, United States
Communication dans un congrès
hal-01903137
v1
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GaSb-based active zones for laser emission at 1.55µmInternational Symposium on Compound Semiconductors (ISCS), 2014, Montpellier, France
Communication dans un congrès
hal-01903487
v1
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Mid-IR heterogeneous silicon photonicsSPIE Photonics West 2014, 2014, San Francisco, United States
Communication dans un congrès
hal-01903127
v1
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Épitaxie par jets moléculaires de semi-conducteurs à base d’antimoine sur substrat Si pour la photoniqueGDR PULSE, Toulouse, 2014, Toulouse, France
Communication dans un congrès
hal-01903148
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Intégration épitaxiale de lasers à base de GaSb sur substrat Si pour émission du proche au moyen IRGDR Ondes, 2014, Orsay, France
Communication dans un congrès
hal-01903151
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GaSb-based grating regrowth for mid-infrared optoelectronic devices18th IC-MBE, 2014, Flagstaff, United States
Communication dans un congrès
hal-01805131
v1
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Nano-optoelectronics applications of antimonide-based compoundsInternational Nano-Optoelectronics Workshop (iNOW’2013), 2013, Cargèse, France
Communication dans un congrès
hal-01864291
v1
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Integrated Thin-Film GaSb-based Fabry-Perot Lasers: Towards a Fully Integrated Spectrometer on a SOI Waveguide CircuitSPIE: Quantum Sensing and Nanophotonic Devices, 2013, San Francisco, United States. ⟨10.1117/12.2000707⟩
Communication dans un congrès
hal-01798001
v1
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GaSb-based all-semiconductor mid-IR plasmonicsPhotonics West (SPIE), 2013, San Francisco, United States
Communication dans un congrès
hal-01864230
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Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applicationsPhotonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain
Communication dans un congrès
hal-01875563
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All-semiconductor plasmonics for mid-IR applicationsOptics + Photonics (SPIE), 2013, San Diego, United States
Communication dans un congrès
hal-01864287
v1
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Antimonides, a key-enabling-technology for integrated infrared photonicsChinese-German Workshop on “Nano-X Fundmental instruments and research on Novel Nanodevices” 4, 2013, Suzhou, China
Communication dans un congrès
hal-01864297
v1
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Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy17th Euro-Molecular Beam Epitaxy (Euro-MBE), 2013, Levi, Finland
Communication dans un congrès
hal-01797215
v1
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Metal-free plasmonics for infrared applications7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia
Communication dans un congrès
hal-01864257
v1
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GaSb VCSELs with cascaded active-region for improved output power40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 2013, Kobe, Japan
Communication dans un congrès
hal-01874650
v1
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GaSb-based nanostrutures and their applicationsSemiconNano 2013, 2013, Lake Arrowhead, United States
Communication dans un congrès
hal-01864294
v1
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Lasers antimoniures et applications à la spectroscopie des gazJNMO, 2013, Evian, France
Communication dans un congrès
hal-01796970
v1
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Sb-based compound lasers on silicon substratesSilicon & Photonics, 2013, Rennes, France
Communication dans un congrès
hal-01796958
v1
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GaAs/GaSb(001) nanostructures at the atomic scaleSPIE Photonics West, Opto-2013, 2013, San Francisco, United States
Communication dans un congrès
hal-01870872
v1
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Highly doped semiconductors for mid-infrared plasmonics36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France
Communication dans un congrès
hal-01862980
v1
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CW operation at RT of Sb-based laser monolithically grown on Si substrateSPIE “Quantum Sensing and Nanophotonic Devices IX", 2012, San Francisco, United States
Communication dans un congrès
hal-01861107
v1
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InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland
Communication dans un congrès
hal-01861067
v1
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Pseudo-volume-plasmon into arrays of doped and un-doped semiconductors3rd International conference on meta-materials, photonic crystals and plasmonics, META12, 2012, Paris, France
Communication dans un congrès
hal-01861379
v1
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Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès
hal-01861063
v1
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Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applicationsIEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States
Communication dans un congrès
hal-01862205
v1
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Single-mode operation of monolithic GaSb- VCSELs2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland
Communication dans un congrès
hal-01861102
v1
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High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched Tunnel-junction aperturesIEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States
Communication dans un congrès
hal-01862214
v1
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Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan
Communication dans un congrès
hal-01862987
v1
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Single mode, CW GaSb-VCSEL operating at 70°C11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès
hal-01861440
v1
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Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès
hal-01861443
v1
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Impact of nucleation conditions on the properties of GaSb-based heterostructures grown by MBE on GaAs substrates17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan
Communication dans un congrès
hal-01862182
v1
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New confinement method for monolithic GaSb-VCSEL emitting in the mid-IRSPIE Photonics Europe 2012, 2012, Bruxelles, Belgium
Communication dans un congrès
hal-01861060
v1
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High temperature, single mode, continuous wave operation of electrically pumped monolithic GaSb VCSELs29th International Symposium on Compound Semiconductors 2012 (ISCS), 2012, Santa Barbara, United States
Communication dans un congrès
hal-01862986
v1
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Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applicationsConference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. pp.79451K, ⟨10.1117/12.874659⟩
Communication dans un congrès
hal-00641358
v1
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The InAs/GaSb/InSb short-period superlattice: an active zone for mid-IR lasersSPIE Photonics West, Opto-2011, “Quantum Sensing and Nanophotonic Devices VIII”, 2011, San Francisco, United States
Communication dans un congrès
hal-01831665
v1
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Metamorphic 6.3 Å GaInSb templates grown on GaAs substrates for mid-IR lasersEuropean Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d'Huez, France
Communication dans un congrès
hal-01858325
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Current developments in MBE growth of highly mismatched materialsEuropean Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d’Huez, France
Communication dans un congrès
hal-01831686
v1
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Sb-based laser grown on Si substrate operating under cw above room temperature38th Int. Symp. on Compound Semiconductors 2011, (ISCS2011), 2011, Berlin, Germany
Communication dans un congrès
hal-01858339
v1
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Growth optimization of InAs/GaSb/InSb short-period super-lattices as active regions of mid-IR lasers16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany
Communication dans un congrès
hal-01830958
v1
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A Faraday Optical Isolator in the 9-10 µm range for Quantum Cascade Laser applicationsPhysique Atomique, Moléculaire et Optique, 2010, Ors, France
Communication dans un congrès
hal-01830468
v1
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Highly Tensile-Strained Ga0.5In0.5As/GaSb Heterostructures37th International Symposium on Compound Semiconductors (ISCS2010), 2010, Takamatsu, Japan
Communication dans un congrès
hal-01830920
v1
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MBE growth of highly tensile strained Ga(In)As/GaSb quantum wells16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany
Communication dans un congrès
hal-01830962
v1
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Sb-based laser sources grown by molecular beam epitaxy on silicon substratesPhotonics West 2010, Novel In-Plane Semiconductor Lasers IX, 2010, San Francisco, United States
Communication dans un congrès
hal-01830461
v1
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Lasers moyen-infrarouge à base d’antimoine réalisés sur substrat Silicium13ème Journées Nano, Micro et Optoélectronique (JNMO 2010), 2010, Les Issambres, France
Communication dans un congrès
hal-01831640
v1
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Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structuresInternational Conference on Nano-Materials and Renewable Energie, 2010, Safi, Morocco
Communication dans un congrès
hal-01830997
v1
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Tensile-Strained Ga1-xInxAs / GaSb Heterostructures for Mid-IR Applications10th Mid-Infrared Optcal Materials and Devices International Conference (MIOMD-10), 2010, Shanghai, China
Communication dans un congrès
hal-01831106
v1
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GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature22nd Int. Conf. on InP and Related Materials (IPRM 2010), 2010, Takamatsu, Japan
Communication dans un congrès
hal-01830913
v1
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Interfaces as design tools for InAs/Gasb/InSb short-period superlattice for mid-infrared emissionConference MADICA 2010, 2010, Tabarka, Tunisia
Communication dans un congrès
hal-01830937
v1
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Sb-based lasers grown on highly mismatched substratesMid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China
Communication dans un congrès
hal-01831036
v1
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GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperatureIEEE Indium Phosphide and Related Materials (IPRM) 2010, 2010, Kagawa, Japan
Communication dans un congrès
hal-01828237
v1
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Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator: towards mid-infrared photonic integrated circuits for environmental and bio-medical applications10th MIOMD Conference, 2010, Shanghai, China
Communication dans un congrès
hal-01831108
v1
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Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States
Communication dans un congrès
hal-01828229
v1
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Structural properties and strain relaxation mechanisms of MBE grown InSb quantum dots on GaSb substrates2nd Int. Conference on Physics at Surfaces and Interfaces (PSI2009), 2009, Puri, India
Communication dans un congrès
hal-01827627
v1
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Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substratesWorkshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), 2009, Malaga, Spain
Communication dans un congrès
hal-01827647
v1
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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada
Communication dans un congrès
hal-01826633
v1
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Interface stability of metastable quaternary (Ga,In)(As,Sb) quantum wells36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States
Communication dans un congrès
hal-01798417
v1
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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), 2009, Zakopane, Poland
Communication dans un congrès
hal-01827641
v1
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GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µmCLEO Europe - EQEC 2009, Jun 2009, Munich, Germany. pp.1-1, ⟨10.1109/CLEOE-EQEC.2009.5192675⟩
Communication dans un congrès
hal-00429890
v1
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Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrateConference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States
Communication dans un congrès
hal-01828217
v1
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Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs SubstrateConference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States
Communication dans un congrès
hal-01828223
v1
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Nanostructure Devices for OptoelectronicsE-nano2009, 2009, Choroni, Venezuela
Communication dans un congrès
hal-01826612
v1
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Mid-IR Sb-based emitters and detectorsWOCSDICE 2009, 2009, Malaga, Spain
Communication dans un congrès
hal-01826607
v1
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Epitaxie par jets moléculaires de boîtes quantiques InSb12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France
Communication dans un congrès
hal-01826576
v1
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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxyInternational Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès
hal-01785734
v1
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Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxyInternational Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès
hal-01825828
v1
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MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zonesInternational Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès
hal-01825818
v1
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InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperatureMIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès
hal-01826454
v1
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Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France
Communication dans un congrès
hal-01826580
v1
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Strain relaxation mechanism in the MBE grown InSb/GaSb material systemInternational Symposium on Compound Semiconductors 2008 (ISCS2008), 2008, Rust, Germany
Communication dans un congrès
hal-01826523
v1
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Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applicationsMIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès
hal-01785770
v1
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Conduction-band G-L crossover in III-V GaSb SAQDs induced by lattice mismatch strainOne-Day Quantum Dot meeting, Imperial College, London, U.K., 11 January 2008, 2008, London, United Kingdom
Communication dans un congrès
hal-01785078
v1
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EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal propertiesXII International Symposium on Nanophysics and Nanoelectronics, 2008, Nizhny Novgorod, Russia
Communication dans un congrès
hal-01826457
v1
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720 mW continuous wave room temperature operation diode laser emitting at around 2.4μmTechnologies for optical countermeasures II (SPIE), 2005, Bruges, Belgium
Communication dans un congrès
hal-01798520
v1
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Carrier recombination processes in GaAsN: from the dilute limit to alloyingE-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
Communication dans un congrès
hal-01310044
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Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩
Communication dans un congrès
istex
hal-01312489
v1
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Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsNInternational Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩
Communication dans un congrès
istex
hal-01319577
v1
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Threading and misfit dislocations study by Electron Channeling Contrast ImagingEuro MBE 2025, Mar 2025, Auron, France
Poster de conférence
hal-04992047
v1
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Kinetic Monte Carlo simulation of GaAs growth on (001) SiliconJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.
Poster de conférence
hal-04738181
v1
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Intégration de laser cascade interbande sur plateforme photonique SiGe par micro transfer-printingJNMO 2024 - Journées Nano, Micro, et Optoélectronique, Oct 2024, Sète, France.
Poster de conférence
hal-04864948
v1
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Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonicsJournées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.
Poster de conférence
hal-04738104
v1
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Intégration par Micro-Transfer-Printing de source ICL sur plateforme photonique Si/SiGeJournées Nationales sur les Technologies Emergentes en Micro-Nanofabrication, Nov 2024, Saint etienne, France
Poster de conférence
hal-04865345
v1
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Type-I and type-II interband cascade lasers emitting around 2.7 µmJournées Nano, Micro et Optoelectronique (JNMO) 2024, Oct 2024, Sète, France
Poster de conférence
hal-04738411
v1
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Intégration de source ICL sur plateforme SiGe par micro transfer-printingJournées Nationales d'Optique Guidée, Jul 2024, Rouen, France
Poster de conférence
hal-04865317
v1
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Direct growth of GaSb on Ge, Ge-on-Si and SiGe-on-Si platforms for integrated mid infra-red photonicsThe 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Poster de conférence
hal-04737853
v1
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MIR Sb-based Interband cascade lasers on metamorphic substratesInternational Nano-Optoelectronics Workshop (iNOW) 2023, Jul 2023, Würzburg, Germany. 2023
Poster de conférence
hal-04282939
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ICLs à 3,3 µm sur substrats de GaSb, GaAs et Si (001)GDR MatEpi 2023, Jul 2023, Paris, France. 2023
Poster de conférence
hal-04282846
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Type-II Interband cascade lasers grown on (100) GaAs substrates21st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain. 2023
Poster de conférence
hal-04282761
v1
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Effectiveness of AlSb dislocation filter layer during GaSb‐on‐Si epitaxyEuro MBE 2023, Apr 2023, Madrid, Spain.
Poster de conférence
hal-04739795
v1
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Epitaxy and Characterization of InP/InGaAs Tandem Solar Cells grown by MOVPE on InP and Si Substrate8th World Conference on Photovoltaic Energy Conversion (WCPEC-8), Sep 2022, Milan, Italy
Poster de conférence
hal-03878592
v1
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Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSbJournées Nationales du Photovoltaïque, Nov 2021, Dourdan, France
Poster de conférence
hal-03641823
v1
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In situ determination of the optimized growth conditions of GaSbBi alloys10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Poster de conférence
hal-02327276
v1
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Ga(In)SbBi alloys for mid-IR applications: growth and characterization16èmes journées Nano, Micro et Optoélectronique, 2018, Cap Esterel, France
Poster de conférence
hal-02327294
v1
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GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France
Poster de conférence
hal-02327289
v1
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Growth and characterization of high Bi-content GaSbBi alloys19th European Workshop on Molecular Beam Epitaxy, 2017, Saint-Petersburg, Russia
Poster de conférence
hal-02327303
v1
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Journées Nano, Micro et Optoélectronique (JNMO)Journées Nano, Micro et Optoélectronique (JNMO) 2024, 2024
Proceedings/Recueil des communications
hal-04904732
v1
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Rapport d’évaluation de l’unité FEMTO-ST – Franche-Comté Électronique, Mécanique, Thermique et Optiques - Sciences et TechnologiesC2023-EV-0251215K-DER-PUR230023102-RF, Hcéres. 2023, pp.1-51
Rapport
(rapport d’expertise collective)
hal-04505233
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GaSbBi alloys and heterostructures: fabrication and propertiesWang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8. ⟨10.1007/978-981-13-8078-5_6⟩
Chapitre d'ouvrage
hal-02326182
v1
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Molecular-Beam Epitaxy of Antimonides for Optoelectronic DevicesMolecular Beam Epitaxy, John Wiley & Sons Ltd, pp.233-246, 2019, 978-1-119-35502-1. ⟨10.1002/9781119354987.ch14⟩
Chapitre d'ouvrage
hal-02342601
v1
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Epitaxial Integration of Antimonide-Based Semiconductor Lasers on SiSilicon Photonics, 99, Academic Press, pp.1-25, 2018, Semiconductor and Semimetals, 978-0-12-815099-3. ⟨10.1016/bs.semsem.2018.08.002⟩
Chapitre d'ouvrage
hal-02342602
v1
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GaSb Lasers Grown on Silicon Substrate for Telecom ApplicationsMolecular Beam Epitaxy, Elsevier, pp.625-635, 2018, 978-0-12-812136-8. ⟨10.1016/B978-0-12-812136-8.00029-3⟩
Chapitre d'ouvrage
hal-02342603
v1
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Mid-Infrared Semiconductor LasersAdvances in Semiconductor Lasers, 86, Academic Press, pp.183-226, 2012, Semiconductors and Semimetals, 978-0-12-391066 0. ⟨10.1016/B978-0-12-391066-0.00005-8⟩
Chapitre d'ouvrage
hal-02342607
v1
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Photo- and electro- luminescence from GaInNAs/GaAs single quantum wells and light emitting diodesNitrides and diluted nitrides: Growth, physics and devices, Research Signpost, pp.77-98, 2007, 978-81-7895-250-5
Chapitre d'ouvrage
hal-02342608
v1
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Mixed III-V-N semiconductors: a challenge for tomorrow?Low-Dimensional Nitride Semiconductors, Oxford University Press, pp.415-455, 2002, 9780198509745
Chapitre d'ouvrage
hal-02342609
v1
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Mid-infrared OptoelectronicsWoodhead Publishing. , 2019, 9780081027097
Ouvrages
hal-02369706
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Semiconductor lasersWoodhead Publishing Limited, 33, 2013, Woodhead Publishing Series in Electronic and Optical Materials, 9780857091215. ⟨10.1533/9780857096401⟩
Ouvrages
hal-02342605
v1
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Harnessing near-field thermal photons with efficient photovoltaic conversion2019
Pré-publication, Document de travail
hal-02409826
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