Eric TOURNIE

388
Documents

Publications

Publications

Material parameter models and simulations of III-Sb solar cells based on AlGaAsSb, AlInAsSb and GaInAsSb quaternary alloys

Stéphanie Parola , Lucas Gavotto , Julie Tournet , Alexandre Vauthelin , Frédéric Martinez et al.
Solar Energy Materials and Solar Cells, 2025, 288, pp.113613. ⟨10.1016/j.solmat.2025.113613⟩
Article dans une revue hal-05054210 v1
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Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing

Daniel Andrés Díaz-Thomas , Diba Ayache , Maëva Fagot , Zeineb Loghmari , Audrey Gilbert et al.
Applied Physics Letters, 2025, 126 (3), pp.031102. ⟨10.1063/5.0242398⟩
Article dans une revue hal-04912746 v1
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Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Audrey Gilbert , M. Ramonda , G. Patriarche , E. Tournié , J.‐b. Rodriguez
Advanced Physics Research, In press, ⟨10.1002/apxr.202400090⟩
Article dans une revue hal-04678079 v1
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Improved light transmission for III-V lasers monolithically integrated on Si platforms

Michele Paparella , Andres Remis , Marco Grande , Thierry Taliercio , Laurent Cerutti et al.
Optics Express, 2024, 32 (22), pp.38994. ⟨10.1364/oe.537703⟩
Article dans une revue hal-04739667 v1
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Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Gad Kombila , Michel Ramonda et al.
Optics Express, 2024, 32 (7), pp.11057. ⟨10.1364/OE.514069⟩
Article dans une revue hal-04739941 v1
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Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon

H. Kim , P. Didier , S. Zaminga , D. Díaz-Thomas , A. Baranov et al.
APL Photonics, 2024, 9 (10), pp.106103-1:106103-9. ⟨10.1063/5.0214252⟩
Article dans une revue hal-04820405 v1
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Multiprobe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence

S. Benlemqwanssa , S.S. Krishtopenko , M. Meyer , L. Bonnet , A. Wolf et al.
Physical Review Applied, 2024, 22 (6), pp.064059. ⟨10.1103/PhysRevApplied.22.064059⟩
Article dans une revue hal-04881971 v1
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Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Andres Remis , Laura Monge-Bartolome , Michele Paparella , Audrey Gilbert , Guilhem Boissier et al.
Light: Science and Applications, 2023, 12, pp.150. ⟨10.1038/s41377-023-01185-4⟩
Article dans une revue hal-04136332 v1
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Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Stefano Soresi , Mattia da Lisca , Claire Besancon , Nicolas Vaissiere , Alexandre Larrue et al.
EPJ Photovoltaics, 2023, WCPEC-8: State of the Art and Developments in Photovoltaics, 14, pp.1. ⟨10.1051/epjpv/2022027⟩
Article dans une revue hal-03931835 v1
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Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Audrey Gilbert , Michel Ramonda , Laurent Cerutti , Charles Cornet , Gilles Patriarche et al.
Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩
Article dans une revue (article de synthèse) hal-04107444 v1
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Quantum cascade lasers monolithically integrated on germanium

K. Kinjalk , A. Gilbert , A. Remis , Z. Loghmari , L. Cerutti et al.
Optics Express, 2022, 30 (25), pp.45259. ⟨10.1364/OE.472473⟩
Article dans une revue hal-04260106 v1
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Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Marta Rio Calvo , Jean-Baptiste Rodriguez , Charles Cornet , Laurent Cerutti , Michel Ramonda et al.
Advanced Electronic Materials, 2022, 8 (1), pp.2100777. ⟨10.1002/aelm.202100777⟩
Article dans une revue hal-03404002 v1

Characterization and Simulation of AlGaAsSb/GaSb Tandem Solar Cell

Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard et al.
IEEE Journal of Photovoltaics, 2022, pp.1-8. ⟨10.1109/JPHOTOV.2022.3164690⟩
Article dans une revue hal-03695407 v1
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Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms

Michele Paparella , Laura Monge Bartolome , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande et al.
IEEE Photonics Journal, 2022, 14, pp.6651206. ⟨10.1109/jphot.2022.3203593⟩
Article dans une revue hal-03779758 v1
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Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Eric Tournié , Laura Monge Bartolome , Marta Rio Calvo , Zeineb Loghmari , Daniel Díaz-Thomas et al.
Light: Science and Applications, 2022, 11, ⟨10.1038/s41377-022-00850-4⟩
Article dans une revue hal-03684843 v1
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Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

Colin Avogadri , Sébastian Gebert , Sergey Krishtopenko , Ivanovitch Castillo Arvelo , Christophe Consejo et al.
Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩
Article dans une revue hal-03939599 v2

Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model

Joanna Kret , Stéphanie Parola , Frédéric Martinez , Alexandre Vauthelin , Julie Tournet et al.
IEEE Journal of Photovoltaics, 2021, pp.1-8. ⟨10.1109/JPHOTOV.2021.3075290⟩
Article dans une revue hal-03252488 v1
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Thermal performance of GaInSb quantum well lasers for silicon photonics applications

C. R. Fitch , G. W. Read , I. P. Marko , D. A. Duffy , L Cerutti et al.
Applied Physics Letters, 2021, 118 (10), pp.101105. ⟨10.1063/5.0042667⟩
Article dans une revue hal-03184764 v1
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Impact of the ridge etching‐depth on GaSb‐based laser diodes

Laura Monge‐bartolome , Laurent Cerutti , Eric Tournié
Electronics Letters, 2021, ⟨10.1049/ell2.12392⟩
Article dans une revue hal-03472735 v1
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Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Efficiency above 14%

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.
Nano Letters, 2021, 21 (11), pp.4524-4529. ⟨10.1021/acs.nanolett.0c04847⟩
Article dans une revue hal-03255719 v1
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Quantum well interband semiconductor lasers highly tolerant to dislocations

Laurent Cerutti , Daniel A Díaz Thomas , Jean-Baptiste Rodriguez , Marta Rio Calvo , Gilles Patriarche et al.
Optica, 2021, 8 (11), pp.1397-1402. ⟨10.1364/optica.438272⟩
Article dans une revue hal-03417026 v1
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Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

J. Kret , J. Tournet , S. Parola , F. Martinez , D. Chemisana et al.
Solar Energy Materials and Solar Cells, 2021, 219, pp.110795. ⟨10.1016/j.solmat.2020.110795⟩
Article dans une revue hal-02951928 v1
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GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

Laura Monge-Bartolome , Bei Shi , Billy Lai , Guilhem Boissier , Laurent Cerutti et al.
Optics Express, 2021, 29 (7), pp.11268-11276. ⟨10.1364/oe.419396⟩
Article dans une revue hal-03184763 v1
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3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Daniel Díaz-Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte et al.
Semiconductor Science and Technology, 2020, 35 (12), pp.125029. ⟨10.1088/1361-6641/abbebc⟩
Article dans une revue hal-02959663 v1
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InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Z. Loghmari , J.-B. Rodriguez , A. Baranov , M. Rio-Calvo , L. Cerutti et al.
APL Photonics, 2020, 5 (4), pp.041302. ⟨10.1063/5.0002376⟩
Article dans une revue hal-02544106 v1
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Zinc-blende group III-V/group IV epitaxy: Importance of the miscut

Charles Cornet , Simon Charbonnier , Ida Lucci , Lipin Chen , Antoine Létoublon et al.
Physical Review Materials, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩
Article dans une revue hal-02878985 v1
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Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Mohammed Zeghouane , Geoffrey Avit , Yamina Andre , Thierry Taliercio , Pierre Ferret et al.
Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩
Article dans une revue hal-02532717 v1
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Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

M. Rio Calvo , Laura Monge-Bartolomé , M. Bahriz , Guilhem Boissier , Laurent Cerutti et al.
Optica, 2020, 7 (4), pp.263. ⟨10.1364/OPTICA.388383⟩
Article dans une revue hal-02520879 v1
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Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Laura Monge-Bartolomé , Tiphaine Cerba , Daniel A Díaz-Thomas , Michaël Bahriz , Marta Calvo et al.
Optics Express, 2020, 28 (14), pp.20785. ⟨10.1364/OE.397164⟩
Article dans une revue hal-02884457 v1

The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates

Michael Niehle , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié , Achim Trampert
physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2019, 13 (10), pp.1900290. ⟨10.1002/pssr.201900290⟩
Article dans une revue hal-02342615 v1

Molecular-beam epitaxy of GaInSbBi alloys

O. Delorme , L. Cerutti , E. Luna , A. Trampert , E. Tournié et al.
Journal of Applied Physics, 2019, Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (15), pp.155304. ⟨10.1063/1.5096226⟩
Article dans une revue hal-02326087 v1

Type I GaSb 1-x Bi x /GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

R. Kudrawiec , J. Kopaczek , O. Delorme , M. Polak , M. Gladysiewicz et al.
Journal of Applied Physics, 2019, 125 (20), pp.205706. ⟨10.1063/1.5094159⟩
Article dans une revue hal-02154946 v1
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Indium antimonide photovoltaic cells for near-field thermophotovoltaics

Dilek Cakiroglu , Jean-Philippe Perez , Axel Evirgen , Christophe Lucchesi , Pierre-Olivier Chapuis et al.
Solar Energy Materials and Solar Cells, 2019, 203, pp.110190. ⟨10.1016/j.solmat.2019.110190⟩
Article dans une revue hal-02303848 v1
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Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer

M. Rio Calvo , J-B Rodriguez , L. Cerutti , M. Ramonda , G. Patriarche et al.
Journal of Crystal Growth, 2019, pp.125299. ⟨10.1016/j.jcrysgro.2019.125299⟩
Article dans une revue hal-02326060 v1
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Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm

D. A Díaz-Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , E. Tournié et al.
Optics Express, 2019, 27 (22), pp.31425. ⟨10.1364/OE.27.031425⟩
Article dans une revue hal-02345145 v1
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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

T. Cerba , P. Hauchecorne , M. Martin , J. Moeyaert , R. Alcotte et al.
Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩
Article dans une revue hal-02055424 v1
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Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Joanna Kret , Joanna El Husseini et al.
Solar Energy Materials and Solar Cells, 2019, 200, pp.110042. ⟨10.1016/j.solmat.2019.110042⟩
Article dans une revue hal-02180291 v1
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Massless Dirac fermions in III-V semiconductor quantum wells

Sergey S. Krishtopenko , W. Desrat , K. Spirin , C. Consejo , S. Ruffenach et al.
Physical Review B, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩
Article dans une revue hal-02072785 v1

Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well

Sergey S. Krishtopenko , Sandra Ruffenach , Fernando Gonzalez-Posada , Christophe Consejo , Wilfried Desrat et al.
JETP Letters, 2019, 109 (2), pp.96-101. ⟨10.1134/S0021364019020085⟩
Article dans une revue hal-02157723 v1
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GaSb-based solar cells for multi-junction integration on Si substrates

J. Tournet , S. Parola , A. Vauthelin , D. Montesdeoca Cardenes , S. Soresi et al.
Solar Energy Materials and Solar Cells, 2019, 191, pp.444-450. ⟨10.1016/j.solmat.2018.11.035⟩
Article dans une revue hal-02052829 v1

Optical properties and dynamics of excitons in Ga(Sb,Bi)/GaSb quantum wells: evidence for a regular alloy behavior

Ernest Rogowicz , Wojciech Linhart , Marcin Grzegorz Syperek , Jan Kopaczek , Olivier Delorme et al.
Semiconductor Science and Technology, In press, 35 (2), pp.025024. ⟨10.1088/1361-6641/ab6017⟩
Article dans une revue hal-02403095 v1
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Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

Rodolphe Vaillon , Jean-Philippe Perez , Christophe Lucchesi , Dilek Cakiroglu , Pierre-Olivier Chapuis et al.
Optics Express, 2019, 27 (4), pp.A11. ⟨10.1364/OE.27.000A11⟩
Article dans une revue hal-02021345 v1

Selective growth of ordered hexagonal InN nanorods

Mohammed Zeghouane , Geoffrey Avit , Thomas W. Cornelius , Damien Salomon , Yamina Andre et al.
CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩
Article dans une revue hal-02107331 v1
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Universal description of III-V/Si epitaxial growth processes

Ida Lucci , Simon Charbonnier , L. Pedesseau , Maxime Vallet , Laurent Cerutti et al.
Physical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩
Article dans une revue hal-01833206 v1
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Quantum cascade lasers grown on silicon

Hoang Nguyen-Van , Alexei Baranov , Zeineb Loghmari , Laurent Cerutti , Jean-Baptiste Rodriguez et al.
Scientific Reports, 2018, 8 (1), ⟨10.1038/s41598-018-24723-2⟩
Article dans une revue hal-02067224 v1

Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

E. Luna , O. Delorme , L. Cerutti , E. Tournié , J-B Rodriguez et al.
Semiconductor Science and Technology, 2018, 33 (9), pp.094006. ⟨10.1088/1361-6641/aad5c4⟩
Article dans une revue hal-02080292 v1
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Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

E. Luna , O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez et al.
Applied Physics Letters, 2018, 112 (15), ⟨10.1063/1.5024199⟩
Article dans une revue hal-01770179 v1

On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

Michael Niehle , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié , Achim Trampert
Acta Materialia, 2018, 143, pp.121 - 129. ⟨10.1016/j.actamat.2017.09.055⟩
Article dans une revue hal-01754869 v1
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Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Mario Bomers , Franziska Barho , Maria Jose Milla-Rodrigo , Laurent Cerutti , Richard Arinero et al.
Journal of Physics D: Applied Physics, 2018, 51 (1), pp.015104. ⟨10.1088/1361-6463/aa98af⟩
Article dans une revue hal-01754720 v1
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Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Mario Bomers , Davide Maria Di Paola , Laurent Cerutti , Thierry Michel , Richard Arinero et al.
Semiconductor Science and Technology, 2018, 33 (9), pp.095009. ⟨10.1088/1361-6641/aad4bf⟩
Article dans une revue hal-02045509 v1
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A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger et al.
Advanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩
Article dans une revue hal-01803990 v1
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Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

Anne Ponchet , G. Patriarche , J. B. Rodriguez , L. Cerutti , E. Tournié
Applied Physics Letters, 2018, 113 (19), pp.191601. ⟨10.1063/1.5055056⟩
Article dans une revue hal-01913668 v1

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J. Rouvière et al.
Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
Article dans une revue hal-01954336 v1
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Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Mario Bomers , Aude Mezy , Laurent Cerutti , Franziska Barho , Fernando Gonzalez-Posada et al.
Applied Surface Science, 2018, 451, pp.241-249. ⟨10.1016/j.apsusc.2018.04.208⟩
Article dans une revue hal-02080141 v1

In situ determination of the growth conditions of GaSbBi alloys

O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez
Journal of Crystal Growth, 2018, 495, pp.9-13. ⟨10.1016/j.jcrysgro.2018.05.010⟩
Article dans une revue hal-02080206 v1
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Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Franziska B. Barho , Fernando Gonzalez-Posada , Maria-Jose Milla , Mario Bomers , Laurent Cerutti et al.
Journal of Nanophotonics, 2018, 7 (2), pp.507-516. ⟨10.1515/nanoph-2017-0052⟩
Article dans une revue hal-01782427 v1
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Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

Sergey S. Krishtopenko , Sandra Ruffenach , F. Gonzalez-Posada , G. Boissier , M. Marcinkiewicz et al.
Physical Review B, 2018, 97 (24), pp.245419. ⟨10.1103/PhysRevB.97.245419⟩
Article dans une revue hal-01862289 v1

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs "Three-Layer" Gapless Quantum Wells

Sandra Ruffenach , Sergey S. Krishtopenko , L. S. Bovkun , A. V. Ikonnikov , M. Marcinkiewicz et al.
JETP Letters, 2017, 106 (11), pp.727-732. ⟨10.1134/S0021364017230102⟩
Article dans une revue hal-01830516 v1

Low-loss orientation-patterned GaSb waveguides for mid-infrared parametric conversion

S. Roux , L. Cerutti , E. Tournié , B. Gerard , G. Patriarche et al.
Optical Materials Express, 2017, 7 (8), ⟨10.1364/OME.7.003011⟩
Article dans une revue hal-01626879 v1

Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

Jean-Baptiste Rodriguez , Laurent Cerutti , G. Patriarche , L. Largeau , K. Madiomanana et al.
Journal of Crystal Growth, 2017, 477, pp.65-71. ⟨10.1016/j.jcrysgro.2017.04.003⟩
Article dans une revue hal-01755268 v1

Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

A. Castellano , L. Cerutti , J. B. Rodriguez , G. Narcy , A. Garreau et al.
APL Photonics, 2017, 2 (6), ⟨10.1063/1.4983389⟩
Article dans une revue hal-01626979 v1

Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié
Journal of Crystal Growth, 2017, 477, pp.144-148. ⟨10.1016/j.jcrysgro.2017.03.048⟩
Article dans une revue hal-01755264 v1

Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations

Michael Niehle , Achim Trampert , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié
Scripta Materialia, 2017, 132, pp.5 - 8. ⟨10.1016/j.scriptamat.2017.01.018⟩
Article dans une revue hal-01626953 v1

GaSbBi/GaSb quantum well laser diodes

O. Delorme , L. Cerutti , E. Luna , G. Narcy , A. Trampert et al.
Applied Physics Letters, 2017, 110 (22), ⟨10.1063/1.4984799⟩
Article dans une revue hal-01626914 v1

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

J. Tournet , Y. Rouillard , E. Tournié
Journal of Crystal Growth, 2017, ⟨10.1016/j.jcrysgro.2017.04.001⟩
Article dans une revue hal-01597528 v1

Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

M. Milla , F. Barho , F. Gonzalez-Posada , L. Cerutti , Benoit Charlot et al.
Optics Express, 2017, 25 (22), ⟨10.1364/OE.25.026651⟩
Article dans une revue hal-01626940 v1

Metamorphic III–V semiconductor lasers grown on silicon

Eric Tournié , Laurent Cerutti , Jean-Baptiste Rodriguez , Huiyun Liu , Jiang Wu et al.
MRS Bulletin, 2016, 41 (03), pp.218 - 223. ⟨10.1557/mrs.2016.24⟩
Article dans une revue hal-01626680 v1

X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

J.B. Rodriguez , K. Madiomanana , L. Cerutti , A. Castellano , E. Tournié
Journal of Crystal Growth, 2016, 439, pp.33 - 39. ⟨10.1016/j.jcrysgro.2016.01.005⟩
Article dans une revue hal-01626675 v1

III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range

M. Muneeb , A. Vasiliev , A. Ruocco , A. Malik , H. Chen et al.
Optics Express, 2016, 24 (9), ⟨10.1364/OE.24.009465⟩
Article dans une revue hal-01626678 v1

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

M. Milla , F Barho , F. Gonzalez-Posada , L. Cerutti , M. Bomers et al.
Nanotechnology, 2016, 27 (42), ⟨10.1088/0957-4484/27/42/425201⟩
Article dans une revue hal-01626670 v1

Silicon surface preparation for III-V molecular beam epitaxy

K. Madiomanana , M. Bahri , J.B. Rodriguez , L. Largeau , L. Cerutti et al.
Journal of Crystal Growth, 2015, 413, pp.17 - 24. ⟨10.1016/j.jcrysgro.2014.12.004⟩
Article dans une revue hal-01626282 v1

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55- μ m

Laurent Cerutti , A. Castellano , J.-B. Rodriguez , M. Bahri , L. Largeau et al.
Applied Physics Letters, 2015, 106 (10), pp.101102. ⟨10.1063/1.4914884⟩
Article dans une revue hal-01626349 v1

Mid-infrared characterization of refractive indices and propagation losses in GaSb/Al X Ga 1−X AsSb waveguides

S. Roux , P. Barritault , O. Lartigue , Laurent Cerutti , Eric Tournié et al.
Applied Physics Letters, 2015, 107 (17), pp.171901. ⟨10.1063/1.4934702⟩
Article dans une revue hal-01626350 v1

Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix

Thierry Taliercio , Vilianne Ntsame Guilengui , Laurent Cerutti , Jean-Baptiste Rodriguez , Franziska Barho et al.
Optics Express, 2015, 23 (23), ⟨10.1364/OE.23.029423⟩
Article dans une revue hal-01626280 v1

Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration

Thierry Taliercio , Vilianne Ntsame Guilengui , Laurent Cerutti , Eric Tournié , Jean-Jacques Greffet
Optics Express, 2014, 22 (20), pp.24294-24303. ⟨10.1364/OE.22.024294⟩
Article dans une revue hal-01349754 v1
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Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

Roel Roelkens , Utsav Dave , Alban Gassenq , Nannicha Hattasan , Chen Hu et al.
IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20 (4), pp.394 - 404. ⟨10.1109/JSTQE.2013.2294460⟩
Article dans une revue hal-01623780 v1

Mid-IR GaSb-based monolithic vertical-cavity surface-emitting lasers

Dorian Sanchez , Laurent Cerutti , Eric Tournié
Journal of Physics D: Applied Physics, 2013, 46 (49), ⟨10.1088/0022-3727/46/49/495101⟩
Article dans une revue hal-01621431 v1

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

E. Ryckeboer , A. Gassenq , M. Muneeb , N. Hattasan , S. Pathak et al.
Optics Express, 2013, 21 (5), ⟨10.1364/OE.21.006101⟩
Article dans une revue hal-01620504 v1

Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well lasers

S. Gadedjisso-Tossou , S. Belahsene , M. A. Mohou , E. Tournié , Y. Rouillard
Semiconductor Science and Technology, 2013, 28 (1), ⟨10.1088/0268-1242/28/1/015015⟩
Article dans une revue hal-01620500 v1

Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

Roel Roelkens , Utsav Dave , Alban Gassenq , Nannicha Hattasan , Chen Chen et al.
Optical Materials Express, 2013, 3 (9), ⟨10.1364/OME.3.001523⟩
Article dans une revue hal-01621428 v1

Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline

M. Clairotte , T.W. Adam , A. Zardini , U. Manfredi , G. Martini et al.
Applied Energy, 2013, 102, pp.44 - 54. ⟨10.1016/j.apenergy.2012.08.010⟩
Article dans une revue istex hal-01621248 v1

Mid-IR GaSb-Based Bipolar Cascade VCSELs

Dorian Sanchez , Laurent Cerutti , Eric Tournié
IEEE Photonics Technology Letters, 2013, 25 (9), pp.882 - 884. ⟨10.1109/LPT.2013.2254707⟩
Article dans une revue hal-01620511 v1

Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures

A. Lenz , E. Tournié , J. Schuppang , M. Dähne , H. Eisele
Applied Physics Letters, 2013, 102 (10), ⟨10.1063/1.4795020⟩
Article dans une revue hal-01621245 v1

III–V/Silicon Photonics for Short-Wave Infrared Spectroscopy

Günther Roelkens , William M. J. Green , Bart Kuyken , Xiaoping Liu , Nannicha Hattasan et al.
IEEE Journal of Quantum Electronics, 2012, 48 (2), pp.292 - 298. ⟨10.1109/JQE.2011.2178090⟩
Article dans une revue hal-01619607 v1

Online characterization of regulated and unregulated gaseous and particulate exhaust emissions from two-stroke mopeds: A chemometric approach

Michael Clairotte , T.W. Adam , R. Chirico , B. Giechaskiel , U. Manfredi et al.
Analytica Chimica Acta, 2012, 717, pp.28-38. ⟨10.1016/j.aca.2011.12.029⟩
Article dans une revue istex hal-01269505 v1

Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics

D. Sanchez , L. Cerutti , E. Tournié
Semiconductor Science and Technology, 2012, 27 (8), ⟨10.1088/0268-1242/27/8/085011⟩
Article dans une revue istex hal-01619620 v1

Localized surface plasmon resonances in highly doped semiconductors nanostructures

V. N'Tsame Guilengui , L. Cerutti , Jean-Baptiste Rodriguez , E. Tournié , T. Taliercio
Applied Physics Letters, 2012, 101 (16), ⟨10.1063/1.4760281⟩
Article dans une revue hal-01619628 v1

Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

Alban Gassenq , Nannicha Hattasan , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié et al.
Optics Express, 2012, 20 (11), ⟨10.1364/OE.20.011665⟩
Article dans une revue hal-01619611 v1

Single-Mode Monolithic GaSb Vertical-Cavity Surface-Emitting Laser

Dorian Sanchez , Laurent Cerutti , Eric Tournié
Optics Express, 2012, 20 (14), ⟨10.1364/OE.20.015540⟩
Article dans une revue hal-01619625 v1

Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

Nannicha Hattasan , Alban Gassenq , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié et al.
IEEE Photonics Technology Letters, 2011, 23 (23), pp.1760 - 1762. ⟨10.1109/LPT.2011.2169244⟩
Article dans une revue hal-01618842 v1
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Note: A high transmission Faraday optical isolator in the 9.2 μm range

Laurent Hilico , Albane Douillet , Jean-Philippe Karr , Eric Tournié
Review of Scientific Instruments, 2011, pp.1. ⟨10.1063/1.3640004⟩
Article dans une revue hal-00574660 v1
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Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

Jean-Rémy Reboul , Laurent Cerutti , Jean-Baptiste Rodriguez , Pierre Grech , Eric Tournié
Applied Physics Letters, 2011, 99 (12), pp.121113. ⟨10.1063/1.3644983⟩
Article dans une revue hal-00641322 v1

Non-random Be-to-Zn substitution in ZnBeSe alloys : Raman scattering and ab initio calculations

O. Pagès , A.V. Postnikov , A. Chafi , D. Bormann , P. Simon et al.
The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 73, pp.461-469. ⟨10.1140/epjb/e2010-00047-0⟩
Article dans une revue istex hal-00534722 v1

Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method

S. Ben Rejeb , M. Debbichi , M. Saïd , A. Gassenq , E. Tournié et al.
Journal of Physics D: Applied Physics, 2010, 43 (32), ⟨10.1088/0022-3727/43/32/325102⟩
Article dans une revue istex hal-01618573 v1
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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

E. Luna , B. Satpati , J. B. Rodriguez , A. N. Baranov , E. Tournié et al.
Applied Physics Letters, 2010, 96 (2), ⟨10.1063/1.3291666⟩
Article dans une revue hal-01618582 v1

GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 mu m at Room Temperature

Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié
IEEE Photonics Technology Letters, 2010, 22 (8), pp.553-555. ⟨10.1109/LPT.2010.2042591⟩
Article dans une revue hal-00539210 v1

Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission

S. Ben Rejeb , M. Debbichi , M. Saïd , A. Gassenq , E. Tournié et al.
Journal of Applied Physics, 2010, 108 (9), ⟨10.1063/1.3503513⟩
Article dans une revue hal-01618571 v1

Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells

T. Taliercio , A. Gassenq , E. Luna , A. Trampert , E. Tournié
Applied Physics Letters, 2010, 96 (6), ⟨10.1063/1.3303821⟩
Article dans une revue hal-01618751 v1

InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 [micro sign]m at room-temperature

A. Gassenq , G. Boissier , P. Grech , G. Narcy , A. N. Baranov et al.
Electronics Letters, 2009, 45 (3), ⟨10.1049/el:20092882⟩
Article dans une revue hal-01617838 v1

Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm

Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié
Electronics Letters, 2009, 45 (5), pp.265-266. ⟨10.1049/el:20090134⟩
Article dans une revue hal-00380609 v1

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

J. B. Rodriguez , L. Cerutti , P. Grech , E. Tournié
Applied Physics Letters, 2009, 94 (6), ⟨10.1063/1.3082098⟩
Article dans une revue hal-01617839 v1

Cycle de conception d’un laser à semi-conducteur pour la détection de gaz

A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié
La Revue de l'électricité et de l'électronique, 2009, n° 6/7, pp. 23 - 26
Article dans une revue hal-01828893 v1

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

E. Luna , F. Ishikawa , B. Satpati , Jean-Baptiste Rodriguez , Eric Tournié et al.
Journal of Crystal Growth, 2009, 311, pp.1739-1744. ⟨10.1016/j.jcrysgro.2008.10.039⟩
Article dans une revue istex hal-00462048 v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE

Laurent Cerutti , Arnaud Ducanchez , Grégoire Narcy , Pierre Grech , G. Boissier et al.
Journal of Crystal Growth, 2009, 311 (7), pp.1912-1916. ⟨10.1016/j.jcrysgro.2008.11.026⟩
Article dans une revue istex hal-00380447 v1

Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

A. Gassenq , T. Taliercio , L. Cerutti , A. N. Baranov , E. Tournié
Electronics Letters, 2009, 45 (25), ⟨10.1049/el.2009.2207⟩
Article dans une revue hal-01617854 v1

Type II transition in InSb-based nanostructures for midinfrared applications

R. Intartaglia , G. Rainó , V. Tasco , F. Della Sala , R. Cingolani et al.
Journal of Applied Physics, 2008, 103 (11), ⟨10.1063/1.2938063⟩
Article dans une revue hal-01617298 v1

S20 photocathodes grown by molecular-beam deposition

N. Massegu , A. Konrath , J.M. Barois , Philippe Christol , E. Tournié
Electronics Letters, 2008, 44 (4), ⟨10.1049/el:20082829⟩
Article dans une revue hal-01617347 v1

Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm

G. Rainò , A. Salhi , V. Tasco , R. Intartaglia , R. Cingolani et al.
Applied Physics Letters, 2008, 92 (10), ⟨10.1063/1.2894586⟩
Article dans une revue hal-01617290 v1

High-density InSb-based quantum dots emitting in the mid-infrared

V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati et al.
Journal of Crystal Growth, 2007, 301-302, pp.713-717. ⟨10.1016/j.jcrysgro.2006.09.016⟩
Article dans une revue istex hal-00325049 v1

Molecular beam epitaxy of InSb/GaSb quantum dots

N. Deguffroy , V. Tasco , A. N. Baranov , E. Tournié , B. Satpati et al.
Journal of Applied Physics, 2007, 101 (12), pp.124309-124309-7. ⟨10.1063/1.2748872⟩
Article dans une revue hal-00327178 v1

Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm

L. Cerutti , G. Boissier , P. Grech , A. Pérona , J. Angellier et al.
Journal of Crystal Growth, 2007, 301-302, pp.967-970. ⟨10.1016/j.jcrysgro.2006.11.057⟩
Article dans une revue istex hal-00327288 v1

MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics

E. Tournié , A. Trampert
physica status solidi (b), 2007, 244 (8), pp.2683-2696. ⟨10.1002/pssb.200675623⟩
Article dans une revue istex hal-00327621 v1

Investigations on InSb-based quantum dots grown by molecular beam epitaxy

N. Deguffroy , V. Tasco , A. N. Baranov , B. Satpati , A. Trampert et al.
physica status solidi (c), 2007, 4 (5), pp.1743-1746. ⟨10.1002/pssc.200674268⟩
Article dans une revue istex hal-00327182 v1

Interface analysis of InAs/GaSb superlattice grown by MBE

Philippe Christol , B. Satpati , Jean-Baptiste Rodriguez , A. Trampert , Eric Tournié et al.
Journal of Crystal Growth, 2007, 301-302, pp.889 - 892. ⟨10.1016/j.jcrysgro.2006.11.284⟩
Article dans une revue istex hal-01756643 v1

Structural and optical properties of InSb quantum dots for mid-IR applications

V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati et al.
physica status solidi (b), 2006, 243 (15), pp.3959-3962. ⟨10.1002/pssb.200671512⟩
Article dans une revue istex hal-00328071 v1

High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati et al.
Applied Physics Letters, 2006, 89 (26), pp.263118.1-263118.3. ⟨10.1063/1.2425041⟩
Article dans une revue hal-00328003 v1

Correlation between quantum well morphology, carrier localization and electronic properties of GaInNAs/GaAs light emitting diodes

J.-M. Ulloa , A. Hierro , J. Miguel-Sanchez , A. Guzman , J.-M. Chauveau et al.
Semiconductor Science and Technology, 2006, 21 (8), pp.1047-1052. ⟨10.1088/0268-1242/21/8/011⟩
Article dans une revue istex hal-00329113 v1

Decomposition in as-grown (Ga,In)(N,As) quantum wells.

X. Kong , A. Trampert , E. Tournié , K.H. Ploog
Applied Physics Letters, 2005, 87 (17), pp.171901. ⟨10.1063/1.2108108⟩
Article dans une revue hal-00330374 v1

Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes

J.-M. Ulloa , A. Hierro , J. Miguel-Sanchez , A. Guzman , E. Tournié et al.
Applied Physics Letters, 2004, 85 (1), pp.40 - 42. ⟨10.1063/1.1769078⟩
Article dans une revue hal-00327653 v1

Does In-bonding delay GaN-segregation in GaInAsN? A Raman study

T. Tite , O. Pagès , E. Tournié
Applied Physics Letters, 2004, 85 (24), pp.5872. ⟨10.1063/1.1829387⟩
Article dans une revue hal-00330630 v1

Long-wave phonons in ZnSe-BeSe mixed crystals: Raman scattering and percolation model

O. Pagès , M. Ajjoun , T. Tite , D. Bormann , E. Tournié et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70 (15), pp.155319.1-155319.10. ⟨10.1103/PhysRevB.70.155319⟩
Article dans une revue hal-00330216 v1

From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

T. Taliercio , R. Intartaglia , B. Gil , P. Lefèbvre , T. Bretagnon et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩
Article dans une revue hal-00330627 v1

Nanoscale analysis of the In and N spatial redistribution upon annealing of GaInNAs quantum wells

J.-M. Chauveau , A. Trampert , K.H. Ploog , E. Tournié
Applied Physics Letters, 2004, 84 (14), pp.2503 - 2505. ⟨10.1063/1.1690108⟩
Article dans une revue hal-00327645 v1

Be–Se double-phonon behavior in Zn1–x–yMgyBexSe alloy

O. Pagès , M. Ajjoun , D. Bormann , E. Tournié
European Physical Journal: Applied Physics, 2004, 95 (12), pp.7690 - 7693. ⟨10.1063/1.1738522⟩
Article dans une revue hal-00330140 v1

Isoelectronic traps in heavily doped GaAs:(In,N)

R. Intartaglia , T. Taliercio , P. Valvin , B. Gil , P. Lefèbvre et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (23), pp.235202.1-235202.5. ⟨10.1103/PhysRevB.68.235202⟩
Article dans une revue hal-00327975 v1

GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm

E. Tournié , M.-A. Pinault , J.-M. Chauveau , A. Trampert , K.H. Ploog
Applied Physics Letters, 2003, 82 (12), pp.1845-1847. ⟨10.1063/1.1563062⟩
Article dans une revue hal-00327186 v1

Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

S.E. Grillo , M. Ducarroir , M. Nadal , E. Tournié , J.-P. Faurie.
Journal of Physics D: Applied Physics, 2003, 36 (1), pp.5-9. ⟨10.1088/0022-3727/36/1/102⟩
Article dans une revue istex hal-00329901 v1

Effect of nitrogen on the band structure and material gain of InyGa1-yAs1-xNx-GaAs quantum wells

J.-M. Ulloa , J.L. Sanchez-Rojas , A. Hierro , J.M.G. Tijero , E. Tournié
IEEE Journal of Selected Topics in Quantum Electronics, 2003, 9 (3), pp.716-722. ⟨10.1109/JSTQE.2003.818860⟩
Article dans une revue hal-00327321 v1

Crystal reorganization upon annealing of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy.

A. Hierro , J.-M. Ulloa , A. Trampert , J.-M. Chauveau , M.-A. Pinault et al.
Journal of Applied Physics, 2003, 94 (4), pp.2319 - 2324. ⟨10.1063/1.1591416⟩
Article dans une revue hal-00327145 v1

Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

J.-M. Chauveau , A. Trampert , K.H. Ploog , M.-A. Pinault , E. Tournié
Applied Physics Letters, 2003, 82 (20), pp.3451-3453. ⟨10.1063/1.1577393⟩
Article dans une revue hal-00327216 v1

Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys

O. Pagès , T. Tite , D. Bormann , E. Tournié , O. Maksimov et al.
Applied Physics Letters, 2003, 82 (17), pp.2808-2810. ⟨10.1063/1.1566801⟩
Article dans une revue hal-00327726 v1

Scattered light noise in gravitational wave interferometric detectors: a statistical approach

J.Y. Vinet , V. Brisson , S. Braccini , I. Ferrante , L. Pinard et al.
Physical Review D, 1997, 56, pp.6085-6095
Article dans une revue in2p3-00000213 v1

Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs

H. Mani , E. Tournié , J.-L. Lazzari , C. Alibert , A. Joullié et al.
Journal of Crystal Growth, 1992, 121 (3), pp.463-472. ⟨10.1016/0022-0248(92)90158-F⟩
Article dans une revue istex hal-03156839 v1
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Preparation et étude de diodes laser a GaInAsSb-GaAlAsSb fonctionnant en continu à 80K

F. Pitard , E. Tournié , M. Mohou , G. Boissier , J.-L. Lazzari et al.
Journal de Physique III, 1991, 1 (4), pp.605-622. ⟨10.1051/jp3:1991143⟩
Article dans une revue jpa-00248604 v1

GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm

E. Tournié , J.-L. Lazzari , E. Villemain , A. Joullié , L. Gouskov et al.
Electronics Letters, 1991, 27 (14), pp.1237. ⟨10.1049/el:19910776⟩
Article dans une revue hal-03156834 v1

2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy

E. Tournié , J.-L. Lazzari , F. Pitard , C. Alibert , A. Joullié et al.
Journal of Applied Physics, 1990, 68 (11), pp.5936-5938. ⟨10.1063/1.346925⟩
Article dans une revue hal-03156369 v1

Interband cascade lasers emitting below 3 µm grown on GaAs substrate

Maëva Fagot , Daniel Andrés Díaz-Thomas , Yves Rouillard , Jean-Baptiste Rodriguez , Eric Tournié et al.
The 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France
Communication dans un congrès hal-04997754 v1

Reducing defect density in the epitaxy of III-Vs on Silicon substrates

Audrey Gilbert , Eric Tournié , Gilles Patriarche , C. Cornet , Michel Ramonda et al.
ICG2025, Jan 2025, LECCE, Italy
Communication dans un congrès hal-04907295 v1

Mid-IR GaSb-based lasers grown on Si platforms

Eric Tournié , Michele Paparella , Andres Remis , D. Díaz-Thomas , Maeva Fagot et al.
SPIE Photonics West 2025, SPIE, Jan 2025, San Francisco (CA, USA), United States
Communication dans un congrès hal-04934677 v1

MBE growth of mid-IR interband cascade lasers

Maëva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Yves Rouillard , Jean-Baptiste Rodriguez et al.
The 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France
Communication dans un congrès hal-04997749 v1
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Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonics

M Silvestre , S Lacaze , A Gilbert , A de Cerdeira Oliveira , D Impelluso et al.
EUROMBE 2025, Mar 2025, Saint-Etienne-de-Tinée (06660), France
Communication dans un congrès hal-04992077 v1
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New InGaAsSb based T2SL for MWIR detection

Théo Sabardeil , E. Izquierdo , Gabin Grégoire , Bouzid Simozrag , Virginie Trinite et al.
The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès hal-04738225 v1

Electron Channeling Contrast Imaging for epi-layer structural defect characterization

Audrey Gilbert , Ariane Meguekam Sado , Eric Tournié , Jean-Baptiste Rodriguez
OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès hal-04738266 v1
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The direct epitaxial growth of III-Vs on Silicon substrate

Audrey Gilbert , Eric Tournié , Gilles Patriarche , C. Cornet , Michel Ramonda et al.
Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sete, France
Communication dans un congrès hal-04737922 v1

Mid-infrared Semiconductor Lasers Grown on group-IV Platforms

Eric Tournié , Audrey Gilbert , Maeva Fagot , Milan Silvestre , Andres Remis et al.
36th International Conference on the Physics of Semiconductors (ICPS 2024), Jul 2024, Ottawa (Ontario), Canada
Communication dans un congrès hal-04754234 v1

Integration of mid-IR semiconductor lasers and Si-photonics circuits

Eric Tournié
29th International Semiconductor Laser Conference, IEEE, Sep 2024, Orlando (FL), United States
Communication dans un congrès hal-04740218 v1
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Epitaxy of III-V semiconductors: some challenges and evolutions

Eric Tournié
OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès hal-04660279 v1

Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks

Audrey Gilbert , Karl Graser , Michel Ramonda , Achim Trampert , Eric Tournié et al.
The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès hal-04737830 v1

Single mode distributed feedback interband cascade lasers grown on Si substrate

Daniel Andres Diaz Thomas , Maëva Fagot , Gad Ndemengoye-Kombila , Audrey Gilbert , Diba Ayache et al.
Novel In-Plane Semiconductor Lasers XXIII, Jan 2024, San Francisco, United States. pp.53, ⟨10.1117/12.3003764⟩
Communication dans un congrès hal-04996188 v1

Effect of a AlSb filter layer on threading dislocation density during GaSb-on-Si epitaxy

Karl Graser , Audrey Gilbert , Steffen Richter , Jean-Baptiste Rodriguez , Eric Tournié et al.
DPG Frühjahrstagung (German Physical Society Spring Meeting), Mar 2024, Berlin, Germany
Communication dans un congrès hal-04739768 v1
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Revisiting the epitaxy of III-Vs on group-IV substrates

Audrey Gilbert , Gilles Patriarche , C. Cornet , Eric Tournié , Michel Ramonda et al.
The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Communication dans un congrès hal-04737783 v1
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Investigation of Intensity Noise in an Interband Cascade Laser Epitaxially Grown on Silicon and Designed for High-speed Applications

Hyunah Kim , Pierre Didier , Sara Zaminga , Heming Huang , Daniel Andrés Díaz-Thomas et al.
2024 Conference on Lasers and Electro-Optics (CLEO 2024), May 2024, Charlotte, NC, United States
Communication dans un congrès hal-04996211 v1

Direct epitaxy of lasers on Si: challenges and solutions

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Michel Ramonda , Yves Rouillard et al.
OSEPI : Epitaxie des oxydes et des semiconducteurs, May 2024, Fréjus, France
Communication dans un congrès hal-04739852 v1

Type-I and type-II interband cascade lasers emitting below 3 µm

Maeva Fagot , Daniel Andrés Díaz-Thomas , Yves Rouillard , Jean-Baptiste Rodriguez , Eric Tournié et al.
Compound Semiconductor Week (CSW) 2024, Jun 2024, Lund, Sweden
Communication dans un congrès hal-04739882 v1

Interband cascade lasers on mismatched substrates emitting above 4 µm

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Gad Kombila , Michel Ramonda et al.
The 23rd International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2024, Matsue, Shimane, Japan
Communication dans un congrès hal-04739914 v1

Understanding III-V/Si Heteroepitaxy: Experiments and Theory

Charles Cornet , Audrey Gilbert , Sreejith Pallikkara Chandrasekharan , Divishth Gupta , Laurent Cerutti et al.
8th European conference on crystal growth, Jul 2024, Warsaw, Poland
Communication dans un congrès hal-04745129 v1

Optimization of AlSb dislocation filter layer for GaSb-based quantum well lasers grown on Si(001)

Karl Graser , Audrey Gilbert , Steffen Richter , Laurent Cerutti , Jean-Baptiste Rodriguez et al.
EMRS Spring Meeting, May 2024, Strasbourg, France
Communication dans un congrès hal-04739759 v1

III-V/Si epitaxial growth and antiphase domains: a matter of symmetry

C. Cornet , Sreejith Pallikkara Chandrasekharan , Audrey Gilbert , Divita Gupta , Philippe Vennéguès et al.
OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France
Communication dans un congrès hal-04738319 v1

Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations

Sreejith Pallikkara Chandrasekharan , D Gupta , Anne Ponchet , Gilles Patriarche , Jean-Baptiste Rodriguez et al.
“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France
Communication dans un congrès hal-04224975 v1

Near-field thermal radiation, thermophotovoltaics and polaritons

Christophe Lucchesi , Julien Legendre , Thomas Châtelet , Dilek Cakiroglu , Jean-Philippe Perez et al.
Thermal Polaritonics Workshop, Apr 2023, Tokyo, France
Communication dans un congrès hal-04310983 v1

Epitaxial integration of mid-infrared III-V devices on group-IV substrates

Eric Tournié , J.-B. Rodriguez , L. Cerutti , A. Gilbert , M. Silvestre et al.
E-MRS ( European Materials Research Society ) Fall Meeting 2023, Symposium A, E-MRS, Sep 2023, Warsaw, Poland
Communication dans un congrès hal-04245650 v1

Integration of Mid-IR lasers and Si photonics circuits

Tournié Eric , M. Paparella , A. Remis , A. Gilbert , M. Rio-Calvo et al.
European Semiconductor Laser Workshop, University of Glasgow, Sep 2023, Glasgow, United Kingdom
Communication dans un congrès hal-04245702 v1

GaSb-based ICLs grown on GaSb, GaAs and Si substrates

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Gad Kombila , Yves Rouillard et al.
Mid-IR Optoelectronics: Materials and Devices XVI, Aug 2023, Norman, Oklahoma, United States
Communication dans un congrès hal-04738303 v1

Mid-IR lasers epitaxially integrated onto Si

E Tournié , A Remis , M Paparella , A Gilbert , L Monge-Bartolomé et al.
45th Freiburg Infrared Colloquium, May 2023, Freiburg (Allemagne), Germany
Communication dans un congrès hal-04121335 v1

Butt-coupling of semiconductor lasers and passive waveguides by direct epitaxy on patterned Si photonic wafers

A Remis , M Paparella , A Gilbert , L Monge-Bartolome , G Boissier et al.
Compound Semiconductor Week 2023, May 2023, Jeju City, Jeju Island, South Korea
Communication dans un congrès hal-04121366 v1

Low bandgap (near-field) TPV: materials and structures

Rodolphe Vaillon , Basile Roux , Christophe Lucchesi , Nacira Hanouf , Dilek Cakiroglu et al.
The 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States
Communication dans un congrès hal-04156802 v1

Cascade lasers epitaxially grown on Silicon substrates

Jean-Baptiste Rodriguez , Laurent Cerutti , A.N. Baranov , Audrey Gilbert , M Rio-Calvo et al.
International Quantum Cascade Lasers School and Workshop, Aug 2022, Zurich - Ascona, Switzerland
Communication dans un congrès hal-03771073 v1

Controlling near-field thermal energy for conversion devices and sensing

Christophe Lucchesi , Julien Legendre , Khac-Long Nguyen , Ahmed Alwakil , Dilek Cakiroglu et al.
Program on Emerging Regimes and Implications of Quantum and Thermal Fluctuational Electrodynamics (Flectro2022), Kavli Institute of Theoretical Physics (KITP), Jul 2022, UC Santa Barbara, United States. ⟨10.26081/K6R93X⟩
Communication dans un congrès hal-03813941 v1
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Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms

Michele Paparella , Laura Monge-Bartolomé , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande et al.
2022 IEEE International Photonics Conference, Nov 2022, Vancouver, Canada. ⟨10.1109/IPC53466.2022.9975716⟩
Communication dans un congrès hal-03906450 v1

Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains.

Audrey Gilbert , Jean-Baptiste Rodriguez , Marta Rio Calvo , Michel Ramonda , Laurent Cerutti et al.
22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom
Communication dans un congrès hal-03806222 v1

Solid-state/optical alternatives to thermoelectricity for thermal-to-electrical energy conversion

Christophe Lucchesi , Julien Legendre , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.
18th European Conference on Thermoelectrics (ECT), Oct 2022, Barcelona, Spain
Communication dans un congrès hal-03813779 v1

Low-energy bandgap thermophotovoltaic cells for harnessing near-field thermal photons

Dilek Cakiroglu , Christophe Lucchesi , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.
C’Nano 2020, The Nanoscience meeting, Nov 2021, Toulouse, France
Communication dans un congrès hal-03457483 v1

Low-energy bandgap thermophotovoltaic cells for medium-grade heat sources

Dilek Cakiroglu , Jean-Philippe Perez , Axel Evirgen , Christophe Lucchesi , Pierre-Olivier Chapuis et al.
2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France
Communication dans un congrès hal-03437899 v1

Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si

A. R. Ellis , I. P. Marko , T. D. Eales , Laurent Cerutti , Marta Rio Calvo et al.
15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom
Communication dans un congrès hal-03336838 v1
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Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layers

Daniel Andres Díaz Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte et al.
Compound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm (online), Sweden
Communication dans un congrès hal-03358749 v1

Analysis of the coupling efficiency between monolithically integrated GaSb laser diodes and SiNx waveguides

Michele Paparella , Laura Monge-Bartolome , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande et al.
15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom
Communication dans un congrès hal-03336700 v1

Toward mid-infrared laser diodes on Silicon photonic integrated circuits

Laura Monge-Bartolome , Marta Rio Calvo , Michaël Bahriz , Jean-Baptiste Rodriguez , Laurent Cerutti et al.
CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès hal-03336233 v1

Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronics

Charles Cornet , Lipin Chen , Mekan Piriyev , Jean-Baptiste Rodriguez , Gabriel Loget et al.
Webinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India
Communication dans un congrès hal-03588366 v1

Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applications

C. R. Fitch , G. W. Read , I. P. Marko , D. A. Duffy , Laurent Cerutti et al.
CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès hal-03336249 v1

Efficient near-field thermophotovoltaic conversion with InSb cells

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.
2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France
Communication dans un congrès hal-03438226 v1

MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Roland Teissier et al.
8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano), Aug 2021, Milano (on line), Italy
Communication dans un congrès hal-03336686 v1

Etched-facets Mid-IR laser on on-axis Silicon substrate for photonic integrated circuits

Laura Monge-Bartolomé , Marta Rio Calvo , M. Bahriz , Jean-Baptiste Rodriguez , Laurent Cerutti et al.
Semiconductor and Integrated Optoelectronics Conference, Mar 2021, on line, United Kingdom
Communication dans un congrès hal-03187613 v1
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Sb-based Mid-IR lasers grown by MBE on Silicon(001)

Marta Rio Calvo , Jean-Baptiste Rodriguez , Laura Monge Bartolome , Laurent Cerutti , Zeineb Loghmari et al.
21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico
Communication dans un congrès hal-03377236 v1

Near-field thermophotovoltaic conversion with high electrical power density and efficiency above 14%

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.
MRS Spring meeting, Symposium "Nanoscale heat transport", Apr 2021, Seattle (remote), United States
Communication dans un congrès hal-03649749 v1

Mid-infrared III-V semiconductor lasers grown on (001)Silicon substrates

Eric Tournié , Laura Monge-Bartolome , Marta Rio Calvo , Daniel Andres Diaz Thomas , Zeineb Loghmari et al.
2021 IEEE Summer Topicals Meeting Series, Jul 2021, On line, United States
Communication dans un congrès hal-03336669 v1

Mid-IR lasers epitaxially grown on on-axis (001) Silicon

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel A Diaz-Thomas et al.
Novel In-Plane Semiconductor Lasers XX, Mar 2021, Online Only, United States. pp.35, ⟨10.1117/12.2576790⟩
Communication dans un congrès hal-03184742 v1

Mid-infrared laser diodes grown on various on-axis III-V-on-Si templates

Laura Monge-Bartolome , Tiphaine Cerba , Mickaël Martin , Marta Rio Calvo , Jean-Baptiste Rodriguez et al.
Compound Semiconductor Week (CSW2021), May 2021, Stockholm (on line), Sweden
Communication dans un congrès hal-03336846 v1

Mid-IR lasers monolithically integrated on on-axis Silicon

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel Andres Diaz Thomas et al.
CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany
Communication dans un congrès hal-03336448 v1

Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)

Jean-Baptiste Rodriguez , M Rio Calvo , Charles Cornet , Laurent Cerutti , M Ramonda et al.
21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico
Communication dans un congrès hal-03336876 v1

Is a substrate miscut really required for high quality III-V/Si monolithic integration?

Charles Cornet , Simon Charbonnier , Ida Lucci , Lipin Chen , Antoine Létoublon et al.
21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico
Communication dans un congrès hal-03402689 v1

Efficient near-field thermophotovoltaic conversion with InSb cells

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.
SFT "Nanoscale Heat Transport Days", Jan 2020, Paris, France
Communication dans un congrès hal-02459116 v1

Mid-IR lasers sources monolithically integrated on Si substrates

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel Andres Diaz Thomas et al.
SPIE Photonex & Vacuum Expo Digital Forum, Emerging Applications in Silicon Photonics, SPIE, Oct 2020, on line, United Kingdom
Communication dans un congrès hal-03184754 v1

Recent advances in near-field thermophotovoltaics

Rodolphe Vaillon , Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.
sTE2C virtual colloquium, Daniele M. Trucchi, Gaspare Varvaro (CNR-ISM, Roma, Italy), Nov 2020, Online, Italy
Communication dans un congrès hal-03018774 v1
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Progress in Interband Cascade Lasers: from edge emitting lasers to VCSELs

Stéphane Calvez , Oleksandr Stepanenko , Daniel A Díaz-Thomas , Thomas Batte , M. Bahriz et al.
2020 22nd International Conference on Transparent Optical Networks (ICTON), Jul 2020, Bari, Italy. pp.1-4, ⟨10.1109/ICTON51198.2020.9203274⟩
Communication dans un congrès hal-02996714 v1

Mid-IR lasers epitaxially grown on silicon

E. Tournié , J.B. Rodriguez , Laurent Cerutti , M. Rio Calvo , Laura Monge-Bartolomé et al.
GDR nanoTERAMIR, Jun 2019, Agay, France
Communication dans un congrès hal-02342614 v1

Molecular-beam epitaxy of GaInSbBi alloys and QWs

Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié et al.
10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Communication dans un congrès hal-02327216 v1

Study of In incorporation into GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié et al.
20th European Workshop on Molecular Beam Epitaxy, 2019, Lenggries, Germany
Communication dans un congrès hal-02327229 v1
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Towards MIR VCSELs operating in CW at RT

Daniel Andres Diaz Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte et al.
Compound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. ⟨10.1109/iciprm.2019.8819164⟩
Communication dans un congrès hal-03012184 v1

Characterization and numerical analysis of III-Sb tandem solar cells

Joanna Kret , S. Parola , J. Tournet , Yves Rouillard , Eric Tournié et al.
Journées Nationales du Photovoltaïque, Dec 2019, Dourdan, France
Communication dans un congrès hal-02382568 v1

InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation)

Eric Tournié , Hoang Nguyen Van , Zeineb Loghmari , Laurent Cerutti , Jean-Baptiste Rodriguez et al.
Quantum Sensing and Nano Electronics and Photonics XVI, Feb 2019, San Francisco, United States. pp.10926-41
Communication dans un congrès hal-02342613 v1

Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates

Jean-Baptiste Rodriguez , M. Rio Calvo , Laurent Cerutti , Laura Monge-Bartolomé , M. Bahriz et al.
The 9th International Symposium on Photonics and Electronics Convergence, Nov 2019, Tokyo, Japan
Communication dans un congrès hal-02383950 v1

Transmission Electron Microscopy of (In,Ga)(Sb,Bi) epilayers and quantum wells

Esperanza Luna , Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez et al.
10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Communication dans un congrès hal-02327205 v1

Near-field radiative heat transfer measurements between a sphere and a substrate: large temperature differences, geometrical effects and materials

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.
MRS Spring Meeting Symposium "Nanoscale Heat Transport: Fundamentals", Apr 2019, Phoenix, United States
Communication dans un congrès hal-02043071 v1

Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

Q. Durlin , J.P. Perez , L. Cerutti , J.B. Rodriguez , T. Cerba et al.
QSIP2018, Jun 2018, Stockholm, Sweden. pp.39-43, ⟨10.1016/j.infrared.2018.10.006⟩
Communication dans un congrès hal-01947798 v1

Near-field thermophotovoltaic conversion with InSb cells

C. Lucchesi , D. Cakiroglu , J.-P. Perez , T. Taliercio , E. Tournié et al.
E-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics, Sep 2019, Varsovie, Poland
Communication dans un congrès hal-02379726 v1

Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cells

S. Parola , Joanna Kret , A. Vauthelin , Julie Tournet , Frédéric Martinez et al.
Forum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy
Communication dans un congrès hal-02382507 v1

Near-field radiative heat transfer experiments and thermophotovoltaic conversion

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.
Focus Session on « Fluctuational Electrodynamics and Heat Transfer », Progress In Electromagnetism Research (PIERS) 2019 conference, Jun 2019, Rome, Italy
Communication dans un congrès hal-02043078 v1

GaSb materials and devices: the IR optoelectronics toolbox

E. Tournié
International Nano-Optoelectronics Workshop (iNOW 2019), Jul 2019, Guangzhou - Shenzhen, China
Communication dans un congrès hal-02342610 v1

Mesures expérimentales du transfert radiatif en champ proche et de la conversion thermophotovoltaïque

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.
Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
Communication dans un congrès hal-02043083 v1

Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)

Eric Tournié , Laurent Cerutti , Jean-Baptiste Rodriguez , Jean-Philippe Perez , Philippe Christol et al.
Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11
Communication dans un congrès hal-02342612 v1

Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics

Joanna Kret , S. Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet et al.
36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France
Communication dans un congrès hal-02382578 v1

A universal mechanism to describe III-V epitaxy on Si

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Communication dans un congrès hal-02048639 v1

Epitaxial Integration of GaSb-based mid-IR devices on Silicon

E. Tournié , Jean-Baptiste Rodriguez , L Cerutti , Roland Teissier , Alexei Baranov
Light Conference 2019, Jul 2019, Changchun, China
Communication dans un congrès hal-02342611 v1

Design of efficient photovoltaic cells for near-field thermophotovoltaics

Daniel Milovich , John Desutter , Dilek Cakiroglu , Christophe Lucchesi , Pierre-Olivier Chapuis et al.
Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Communication dans un congrès hal-02021380 v1

Sb-based IR Detector and Emitter Materials

E. Tournié , A. N. Baranov , L. Cerutti , J.-P. Perez , J.-B. Rodriguez
Sb-based IR Detector and Emitter Materials, CSWeek 2018, 2018, Boston, United States
Communication dans un congrès hal-02078599 v1

Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger et al.
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
Communication dans un congrès hal-01910556 v1

InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem et al.
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
Communication dans un congrès hal-01954906 v1

GaSb materials and devices: the IR toolbox

E. Tournié
UK Semiconductors, 2018, Sheffield, United Kingdom
Communication dans un congrès hal-02078273 v1

Antimonide-based optoelectronic devices epitaxially grown on Silicon

E. Tournié , L. Cerutti , J.-B. Rodriguez , J.-P. Perez , A. N. Baranov et al.
International nano-optoelectronics workshop (iNOW 2018), 2018, Berkeley, United States
Communication dans un congrès hal-02078268 v1

Near-field radiative heat transfer experiments for thermophotovoltaic conversion

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.
5th International Conference on Near-Field Optics, Nanophotonics and Related Techniques (NFO), Aug 2018, Troyes, France
Communication dans un congrès hal-02025479 v1

(114) GaP surface texturation on Si for water splitting

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger et al.
EMRS Spring meeting 2018, Jun 2018, Strasbourg, France
Communication dans un congrès hal-01708047 v1

III-V semiconductor plasmonics for microfluidic molecular sensing

M. Bomers , F. Barho , B. Charlot , A. Mezy , L. Cerutti et al.
Final conference of PROMIS, Photonics by the Lake, 2018, Windermere, United Kingdom
Communication dans un congrès hal-02084307 v1

Mid-IR Optoelectronic devices epitaxially grown on Silicon

E. Tournié , A. N. Baranov , L. Cerutti , J.-B. Rodriguez , R. Teissier
Mid-IR Optoelectronic devices epitaxially grown on Silicon, CLEO 2018, 2018, San Jose, United States
Communication dans un congrès hal-02078610 v1

On the origin of defects during III-Sb epitaxy on Si(001)

A. Trampert , M. Niehle , H. Drube , J.-B. Rodriguez , L. Cerutti et al.
2018 E-MRS Spring meeting, Symposium V, 2018, Strasbourg, France
Communication dans un congrès hal-02078642 v1

Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependence

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.
GDRe workshop on Thermal Nanosciences and NanoEngineering, Oct 2018, Lyon, France
Communication dans un congrès hal-01932675 v1

Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes

O. Delorme , L. Cerutti , E. Luna , R. Kudrawiec , J. Kopaczek et al.
14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018, Flagstaff, United States
Communication dans un congrès hal-02078153 v1

A general III-V/Si growth process description

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès hal-01910535 v1

III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès hal-01910543 v1

Quantum cascade lasers grown on silicon

A. N. Baranov , H. Nguyen-Van , Z. Loghmari , L. Cerutti , J.-B. Rodriguez et al.
18th Int. Conf. on Laser Optics, 2018, St Petersburg, Russia
Communication dans un congrès hal-02078298 v1

Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cells

Joanna Kret , Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Yves Rouillard et al.
Journées Nationales du Photovoltaïque, Dec 2018, Dourdan, France
Communication dans un congrès hal-02061904 v1

Plasmonique tout-semi-conducteur pour les applications du moyen-infrarouge

F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti , E. Tournié et al.
Congrès de la Société Française d’Optique, 2018, Toulouse, France
Communication dans un congrès hal-02084338 v1

Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells

O. Delorme , L. Cerutti , R. Kudrawiec , E. Luna , J. Kopaczek et al.
20th International Conference on Molecular-Beam Epitaxy (MBE 2018), 2018, Shanghai, China
Communication dans un congrès hal-02078204 v1

AlInAsSb for GaSb-based multi-junction solar cells

J. Tournet , Y. Rouillard , E. Tournié
Photonics West 2018, 2018, San Francisco, United States
Communication dans un congrès hal-02080336 v1

A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Communication dans un congrès hal-01910554 v1

GaP Template on Si for Solar Water Splitting: surface energy engineering

Laurent Pedesseau , Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban et al.
nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
Communication dans un congrès hal-01909068 v1

Mid-Infrared 2.7 µm GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure

Igor Marko , Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez et al.
14th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2018, Flagstaff, United States
Communication dans un congrès hal-02327248 v1

GaSb-based lasers in the telecom wavelength range monolithically integrated on Si

E. Tournié , L. Cerutti , J.-B. Rodriguez , A. Castellano , A. Garreau et al.
ECOC 2018, Workshop on Integrated Photonics, 2018, Rome, Italy
Communication dans un congrès hal-02078228 v1

Surface enhanced infrared absorption with highly doped InAsSb plasmonic nanostructures

F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti , E. Tournié et al.
GDR NanoTeraMIR, 2018, Montpellier, France
Communication dans un congrès hal-02084508 v1

Thermophotovoltaic devices for solar and thermal energy conversion

Rodolphe Vaillon , Christophe Lucchesi , Etienne Blandre , Pierre-Olivier Chapuis , Dilek Cakiroglu et al.
Journées Nationales sur l'Énergie Solaire «Congrès JNES 2018», Jun 2018, Villeurbanne, France
Communication dans un congrès hal-01841462 v1

Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells

Stéphanie Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet , Joanna El Husseini et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942
Communication dans un congrès hal-02052823 v1

Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependence

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.
Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland
Communication dans un congrès hal-02021385 v1

Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïque

Christophe Lucchesi , Pierre-Olivier Chapuis , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.
Journées Nationales sur l’Energie Solaire, Jun 2018, Villeurbanne, France
Communication dans un congrès hal-01832256 v1

Metamorphic III-Sb lasers epitaxially grown on Si substrates

E. Tournié , L. Cerutti , J.-B. Rodriguez , G. Narcy , A. Castellano et al.
International School on Epitaxial Technologies of Novel materials and Nanostructures, 2017, St. Petersburg, Russia
Communication dans un congrès hal-01905208 v1

Lasers à semiconducteurs intégrés sur Silicium

E. Tournié
Journées Nationales sur l’Optique Guidée (JNOG), 2017, Limoges, France
Communication dans un congrès hal-01905155 v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Sylvain David , Jean-Luc Rouvière et al.
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
Communication dans un congrès hal-01891383 v1

High Bi-content GaSbBi alloys for mid-IR applications

O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez
CSWeek 2017, 2017, Berlin, Germany
Communication dans un congrès hal-01905735 v1

Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications

E. Luna , A. Trampert , O. Delorme , L. Cerutti , E. Tournié et al.
8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany
Communication dans un congrès hal-01905702 v1

GaSb-based lasers epitaxially grown on Si

E. Tournié , L. Cerutti , J.-B. Rodriguez , A. Castellano , G. Narcy et al.
E-MRS Fall meeting, Symposium, 2017, Warsaw, Poland
Communication dans un congrès hal-01905141 v1

Surface enhanced infrared absorption with highly doped InAsSb plasmonic nano-antenna arrays

F. Barho , M. J. Milla , M. Bomers , Fernando Gonzalez-Posada Flores , L. Cerutti et al.
Nanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain
Communication dans un congrès hal-01905761 v1

Mid-IR surface enhanced absorption spectroscopy with 1D Highly Si-Doped InAsSb nano-antennas

M. J. Milla , F. Gonzalez-Posada , L. Cerutti , F. Barho , M. Bomers et al.
E-MRS Spring Meeting, 2017, Strasbourg, France
Communication dans un congrès hal-01905789 v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.
E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
Communication dans un congrès hal-01905730 v1

GaSbBi/GaSb quantum well laser diodes

Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié et al.
8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany
Communication dans un congrès hal-02327190 v1

Plasmonic bio-sensing based on highly doped semiconductors

María-José Milla Rodrigo , Franziska Barho , Fernando Gonzalez-Posada Flores , Laurent Cerutti , Jean-Baptiste Rodriguez et al.
Optics + Photonics (SPIE), 2017, San Diego, United States
Communication dans un congrès hal-01905149 v1

III-V/Si 3D crystal growth: a thermodynamic description

Ida Lucci , Simon Charbonnier , Maxime Vallet , Tony Rohel , Rozenn Bernard et al.
Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Communication dans un congrès hal-01708282 v1

Metamorphic III-Sb lasers epitaxially grown on Silicon

L. Cerutti , J.-B. Rodriguez , A. Castellano , K. Madiomanana , G. Narcy et al.
19th European Workshop on Molecular-Beam Epitaxy, (Euro-MBE 2017), 2017, St. Petersburg, Russia
Communication dans un congrès hal-01905184 v1

GaSbBi alloys for mid-infrared optoelectronics

O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez
Freiburg Infrared Colloqium, 2017, Freiburg, Germany
Communication dans un congrès hal-01905746 v1

Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.
17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France
Communication dans un congrès hal-01891389 v1

GaSb oxidation for plasmonic enhanced mid-IR molecular spectroscopy

M. Bomers , F. Barho , A. Mezy , M. J. Milla , L. Cerutti et al.
Nanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain
Communication dans un congrès hal-01905752 v1

MBE growth of periodically-oriented GaSb on GaAs templates for frequency conversion in the mid-infrared wavelength range

L. Cerutti , S. Roux , G. Patriarche , M. Garcia , B. Gérard et al.
19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès hal-01903697 v1

GaSb lasers grown on Silicon substrate for telecom application

A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , F. Lelarge et al.
19th Conference on Molecular Beam epitaxy (MBE2014), 2016, Montpellier, France
Communication dans un congrès hal-01903740 v1

Brewster mode : optical monitoring of the semiconductor doping level

Maria Jose Milla Rodrigo , Thierry Taliercio , Laurent Cerutti , Fernando Gonzalez-Posada Flores , Franziska Barho et al.
Photonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès hal-01903684 v1

Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez
13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2016, Beijing, China
Communication dans un congrès hal-02327267 v1

Surface-enhanced infrared absorption using highly doped InAsSb/GaSb Nanostructures

M. Milla-Rodrigo , F. Barho , F. Gonzalez-Posada , L. Cerutti , E. Tournié et al.
2016 MRS (Material Research Society) Fall Meeting, 2016, Boston, United States
Communication dans un congrès hal-01903778 v1

Highly doped InAsSb nanoribbon on GaSb for plasmonics applications

M. Milla-Rodrigo , F. Barho , L. Cerutti , E. Tournié , T. Taliercio
13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2016, Beijing, China
Communication dans un congrès hal-01903751 v1

Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructures

María-José Milla Rodrigo , Franziska Barho , Fernando Gonzalez-Posada Flores , Laurent Cerutti , Jean-Baptiste Rodriguez et al.
Photonic West OPTO (SPIE), 2016, San Francisco, United States
Communication dans un congrès hal-01903606 v1

GaSb grown by molecular beam epitaxy on silicon substrates

J.-B. Rodriguez , L. Cerutti , G. Patriarche , L. Largeau , K. Madiomanana et al.
19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès hal-01903638 v1

GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range

A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , A. Garreau et al.
43rd Int. Symp. on Compound Semiconductors (ISCS 2016), 2016, Toyama, Japan
Communication dans un congrès hal-01903723 v1

On the origin of threading dislocations during III-Sb epitaxy on Si(001)

M. Niehle , J.-B. Rodriguez , L. Cerutti , K. Madiomanana , E. Tournié et al.
19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès hal-01903706 v1

Highly doped InAsSb plasmonic arrays for mid-infrared biosensing

F. Bahro , F. Gonzalez-Posada , M. J. Milla Rodrigo , M. Bomers , L. Cerutti et al.
IEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France
Communication dans un congrès hal-01903761 v1

First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared

Benjamin Eggleton , G. Broderick , L. Gaeta , S. Roux , L. Cerutti et al.
SPIE Photonics Europe, 2016, Brussels, France. ⟨10.1117/12.2225441⟩
Communication dans un congrès hal-01759576 v1

3.8 μm Heterogeneously Integrated III-V on Silicon Micro-Spectrometer

A. Vasiliev , M. Muneeb , A. Ruocco , A. Malik , H. Chen et al.
18th European Conference on Integrated Optics, 2016, Warsaw, Poland
Communication dans un congrès hal-01903732 v1

GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range

A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , F. Lelarge et al.
19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France
Communication dans un congrès hal-01903690 v1

All semiconductor plasmonics for bio-sensing

M. J. Milla , F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti et al.
International Conference on Energy, Materials & Photonics, 2016, Troyes, France
Communication dans un congrès hal-01903594 v1

Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez
19th International Conference on Molecular Beam Epitaxy, 2016, Montpellier, France
Communication dans un congrès hal-02327261 v1

III-V lasers monolithically grown on Silicon

E. Tournié
IEEE Photonics Conference, 2016, Orlando, United States
Communication dans un congrès hal-01905127 v1

GaInSb/AlInSb coupled QWs on GaSb for telecom laser

L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez , F. Lelarge et al.
SPIE Photonics West, Opto-2015, Novel In-Plane Semiconductor Lasers XIV, 2015, San Francisco, United States
Communication dans un congrès hal-01903574 v1

Observation of Fano resonances in highly doped semiconductor plasmonic resonators

T. Taliercio , Vilianne N’tsame , L. Cerutti , J.-B. Rodriguez , Franziska Barho et al.
SPIE NanoScience + Engineering, 2015, San Diego, United States
Communication dans un congrès hal-01903562 v1

Brewster “mode” or how to optically monitor the doping concentration in highly doped semiconductor layers

T. Taliercio , L. Cerutti , E. Tournié , J. J. J Greffet , Franziska Barho et al.
META15 Conference, 2015, New York, United States
Communication dans un congrès hal-01903564 v1

Highly doped semiconductor plasmonics for mid-IR applications

T. Taliercio , V. N’tsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié
7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel
Communication dans un congrès hal-01903569 v1

GaSb-based MIR semiconductor materials and lasers

E. Tournié
IEEE 2015 Summer Topicals Meeting Series, 2015, Nassau, Bahamas
Communication dans un congrès hal-01903509 v1
Image document

Terahertz studies of 2D and 3D topological transitions

M. Marcinkiewicz , Frederic Teppe , Christophe Consejo , Nina Diakonova , Wilfried Desrat et al.
19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩
Communication dans un congrès hal-01249953 v2

New Index-Coupled Distributed-Feedback Gasb-Based Lasers Diodes In The 2 to 3 µm Wavelength Range. Applications To Spectroscopy

A. Vicet , Q. Gaimard , Alexandre Larrue , L. Cerutti , T. Nguyenba et al.
3rd International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing (MIRSENS 3), Mar 2015, Würzburg, Germany
Communication dans un congrès hal-01795440 v1

1.55 µm GaSb-based lasers monolithically grown on Si substrates

E. Tournié , L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez
18th Conference on Molecular Beam epitaxy (MBE2014), 2014, Flagstaff, United States
Communication dans un congrès hal-01903137 v1

GaSb-based active zones for laser emission at 1.55µm

A. Castellano , L. Cerutti , J.-B. Rodriguez , K. Madiomanana , F. Lelarge et al.
International Symposium on Compound Semiconductors (ISCS), 2014, Montpellier, France
Communication dans un congrès hal-01903487 v1

Mid-IR heterogeneous silicon photonics

G. Roelkens , U. Dave , A. Gassenq , N. Hattasan , C. Hu et al.
SPIE Photonics West 2014, 2014, San Francisco, United States
Communication dans un congrès hal-01903127 v1

Épitaxie par jets moléculaires de semi-conducteurs à base d’antimoine sur substrat Si pour la photonique

J.-B. Rodriguez , K. Madiomanana , A. Castellano , E. Tournié
GDR PULSE, Toulouse, 2014, Toulouse, France
Communication dans un congrès hal-01903148 v1

Intégration épitaxiale de lasers à base de GaSb sur substrat Si pour émission du proche au moyen IR

E. Tournié , L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez
GDR Ondes, 2014, Orsay, France
Communication dans un congrès hal-01903151 v1

GaSb-based grating regrowth for mid-infrared optoelectronic devices

L. Cerutti , J.-B. Rodriguez , Q. Gaimard , V. N’tsame-Guilengui , T. Taliercio et al.
18th IC-MBE, 2014, Flagstaff, United States
Communication dans un congrès hal-01805131 v1

Nano-optoelectronics applications of antimonide-based compounds

E. Tournié
International Nano-Optoelectronics Workshop (iNOW’2013), 2013, Cargèse, France
Communication dans un congrès hal-01864291 v1

Integrated Thin-Film GaSb-based Fabry-Perot Lasers: Towards a Fully Integrated Spectrometer on a SOI Waveguide Circuit

N. Hattasan , A. Gassenq , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié et al.
SPIE: Quantum Sensing and Nanophotonic Devices, 2013, San Francisco, United States. ⟨10.1117/12.2000707⟩
Communication dans un congrès hal-01798001 v1

GaSb-based all-semiconductor mid-IR plasmonics

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié
Photonics West (SPIE), 2013, San Francisco, United States
Communication dans un congrès hal-01864230 v1

Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applications

V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié , T. Taliercio
Photonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain
Communication dans un congrès hal-01875563 v1

All-semiconductor plasmonics for mid-IR applications

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié
Optics + Photonics (SPIE), 2013, San Diego, United States
Communication dans un congrès hal-01864287 v1

Antimonides, a key-enabling-technology for integrated infrared photonics

E. Tournié , L. Cerutti , K. Madiomanana , J.-R. Reboul , J.-B. Rodriguez
Chinese-German Workshop on “Nano-X Fundmental instruments and research on Novel Nanodevices” 4, 2013, Suzhou, China
Communication dans un congrès hal-01864297 v1

Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy

E. Tournié , L. Cerutti , G. Boissier , Y. Rouillard , A. N. Baranov et al.
17th Euro-Molecular Beam Epitaxy (Euro-MBE), 2013, Levi, Finland
Communication dans un congrès hal-01797215 v1

Metal-free plasmonics for infrared applications

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié
7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia
Communication dans un congrès hal-01864257 v1

GaSb VCSELs with cascaded active-region for improved output power

D. Sanchez , L. Cerutti , E. Tournié
40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 2013, Kobe, Japan
Communication dans un congrès hal-01874650 v1

GaSb-based nanostrutures and their applications

E. Tournié
SemiconNano 2013, 2013, Lake Arrowhead, United States
Communication dans un congrès hal-01864294 v1

Lasers antimoniures et applications à la spectroscopie des gaz

A. Vicet , Y. Rouillard , L. Cerutti , R. Teissier , A. N. Baranov et al.
JNMO, 2013, Evian, France
Communication dans un congrès hal-01796970 v1

Sb-based compound lasers on silicon substrates

Jean-Baptiste Rodriguez , L. Cerutti , K. Madiomanana , J. R. Reboul , Y. Rouillard et al.
Silicon & Photonics, 2013, Rennes, France
Communication dans un congrès hal-01796958 v1

GaAs/GaSb(001) nanostructures at the atomic scale

A. Lenz , J. Schuppang , A. Gassenq , T. Taliercio , E. Tournié et al.
SPIE Photonics West, Opto-2013, 2013, San Francisco, United States
Communication dans un congrès hal-01870872 v1

Highly doped semiconductors for mid-infrared plasmonics

V. Ntsame Guilengui , T. Taliercio , L. Cerutti , J.-B. Rodriguez , E. Tournié
36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France
Communication dans un congrès hal-01862980 v1

CW operation at RT of Sb-based laser monolithically grown on Si substrate

J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié
SPIE “Quantum Sensing and Nanophotonic Devices IX", 2012, San Francisco, United States
Communication dans un congrès hal-01861107 v1

InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications

N. Hattasan , A. Gassenq , L. Cerutti , J.-B. Rodriguez , E. Tournié et al.
2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland
Communication dans un congrès hal-01861067 v1

Pseudo-volume-plasmon into arrays of doped and un-doped semiconductors

T. Taliercio , V. N’tsame Guilengui , E. Tournié
3rd International conference on meta-materials, photonic crystals and plasmonics, META12, 2012, Paris, France
Communication dans un congrès hal-01861379 v1

Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates

J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié
11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès hal-01861063 v1

Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applications

E. Ryckeboer , A. Gassenq , N. Hattasan , B. Kuyken , L. Cerutti et al.
IEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States
Communication dans un congrès hal-01862205 v1

Single-mode operation of monolithic GaSb- VCSELs

E. Tournié , D. Sanchez , L. Cerutti
2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland
Communication dans un congrès hal-01861102 v1

High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched Tunnel-junction apertures

D. Sanchez , L. Cerutti , E. Tournié
IEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States
Communication dans un congrès hal-01862214 v1

Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C

L. Cerutti , D. Sanchez , E. Tournié
17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan
Communication dans un congrès hal-01862987 v1

Single mode, CW GaSb-VCSEL operating at 70°C

D. Sanchez , L. Cerutti , E. Tournié
11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès hal-01861440 v1

Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié
11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States
Communication dans un congrès hal-01861443 v1

Impact of nucleation conditions on the properties of GaSb-based heterostructures grown by MBE on GaAs substrates

K. Madiomanana , J.-B. Rodriguez , L. Cerutti , E. Tournié
17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan
Communication dans un congrès hal-01862182 v1

New confinement method for monolithic GaSb-VCSEL emitting in the mid-IR

D. Sanchez , L. Cerutti , E. Tournié
SPIE Photonics Europe 2012, 2012, Bruxelles, Belgium
Communication dans un congrès hal-01861060 v1

High temperature, single mode, continuous wave operation of electrically pumped monolithic GaSb VCSELs

D. Sanchez , L. Cerutti , E. Tournié
29th International Symposium on Compound Semiconductors 2012 (ISCS), 2012, Santa Barbara, United States
Communication dans un congrès hal-01862986 v1

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

N. Hattasan , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié , Dries van Thourhout et al.
Conference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. pp.79451K, ⟨10.1117/12.874659⟩
Communication dans un congrès hal-00641358 v1

The InAs/GaSb/InSb short-period superlattice: an active zone for mid-IR lasers

E. Tournié , A. Gassenq , L. Cerutti
SPIE Photonics West, Opto-2011, “Quantum Sensing and Nanophotonic Devices VIII”, 2011, San Francisco, United States
Communication dans un congrès hal-01831665 v1

Metamorphic 6.3 Å GaInSb templates grown on GaAs substrates for mid-IR lasers

Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié
European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d'Huez, France
Communication dans un congrès hal-01858325 v1

Current developments in MBE growth of highly mismatched materials

J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié
European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d’Huez, France
Communication dans un congrès hal-01831686 v1

Sb-based laser grown on Si substrate operating under cw above room temperature

Laurent Cerutti , Jean-Baptiste Rodriguez , J. R. Reboul , Eric Tournié
38th Int. Symp. on Compound Semiconductors 2011, (ISCS2011), 2011, Berlin, Germany
Communication dans un congrès hal-01858339 v1

Growth optimization of InAs/GaSb/InSb short-period super-lattices as active regions of mid-IR lasers

A. Gassenq , L. Cerutti , E. Tournié
16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany
Communication dans un congrès hal-01830958 v1

A Faraday Optical Isolator in the 9-10 µm range for Quantum Cascade Laser applications

L. Hilico , E. Tournié , A. Besse , A. Orgongozo
Physique Atomique, Moléculaire et Optique, 2010, Ors, France
Communication dans un congrès hal-01830468 v1

Highly Tensile-Strained Ga0.5In0.5As/GaSb Heterostructures

T. Taliercio , A. Gassenq , E. Luna , A. Trampert , E. Tournié
37th International Symposium on Compound Semiconductors (ISCS2010), 2010, Takamatsu, Japan
Communication dans un congrès hal-01830920 v1

MBE growth of highly tensile strained Ga(In)As/GaSb quantum wells

A. Gassenq , E. Luna , T. Taliercio , A. Trampert , E. Tournié
16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany
Communication dans un congrès hal-01830962 v1

Sb-based laser sources grown by molecular beam epitaxy on silicon substrates

J.-B. Rodriguez , L. Cerutti , P. Grech , G. Boissier , G. Narcy et al.
Photonics West 2010, Novel In-Plane Semiconductor Lasers IX, 2010, San Francisco, United States
Communication dans un congrès hal-01830461 v1

Lasers moyen-infrarouge à base d’antimoine réalisés sur substrat Silicium

J.-B. Rodriguez , J. R. Reboul , L. Cerutti , E. Tournié
13ème Journées Nano, Micro et Optoélectronique (JNMO 2010), 2010, Les Issambres, France
Communication dans un congrès hal-01831640 v1

Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structures

S. Ben Rejeb , M. Debbichi , M. Saîd , A. Gassenq , E. Tournié et al.
International Conference on Nano-Materials and Renewable Energie, 2010, Safi, Morocco
Communication dans un congrès hal-01830997 v1

Tensile-Strained Ga1-xInxAs / GaSb Heterostructures for Mid-IR Applications

T. Taliercio , E. Luna , A. Gassenq , A. Trampert , E. Tournié
10th Mid-Infrared Optcal Materials and Devices International Conference (MIOMD-10), 2010, Shanghai, China
Communication dans un congrès hal-01831106 v1

GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature

L. Cerutti , J.-B. Rodriguez , E. Tournié
22nd Int. Conf. on InP and Related Materials (IPRM 2010), 2010, Takamatsu, Japan
Communication dans un congrès hal-01830913 v1

Interfaces as design tools for InAs/Gasb/InSb short-period superlattice for mid-infrared emission

S. Ben Rejeb , M. Debbichi , M. Said , A. Gassenq , E. Tournié et al.
Conference MADICA 2010, 2010, Tabarka, Tunisia
Communication dans un congrès hal-01830937 v1

Sb-based lasers grown on highly mismatched substrates

Laurent Cerutti , Jean-Rémy Reboul , Jean-Baptiste Rodriguez , Eric Tournié
Mid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China
Communication dans un congrès hal-01831036 v1

GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperature

L. Cerutti , J.-B. Rodriguez , Eric Tournié
IEEE Indium Phosphide and Related Materials (IPRM) 2010, 2010, Kagawa, Japan
Communication dans un congrès hal-01828237 v1

Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator: towards mid-infrared photonic integrated circuits for environmental and bio-medical applications

N. Hattasan , L. Cerutti , J.-B. Rodriguez , E. Tournié , D. Van Thourhout et al.
10th MIOMD Conference, 2010, Shanghai, China
Communication dans un congrès hal-01831108 v1

Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates

J.-B. Rodriguez , L. Cerutti , E. Tournié
36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States
Communication dans un congrès hal-01828229 v1

Structural properties and strain relaxation mechanisms of MBE grown InSb quantum dots on GaSb substrates

B. Satpati , V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié et al.
2nd Int. Conference on Physics at Surfaces and Interfaces (PSI2009), 2009, Puri, India
Communication dans un congrès hal-01827627 v1

Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substrates

Jean-Baptiste Rodriguez , L. Cerutti , E. Tournié
Workshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), 2009, Malaga, Spain
Communication dans un congrès hal-01827647 v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

L. Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier et al.
15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada
Communication dans un congrès hal-01826633 v1

Interface stability of metastable quaternary (Ga,In)(As,Sb) quantum wells

E. Luna , Y. Rouillard , L. Cerutti , E. Tournié , A. Trampert
36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States
Communication dans un congrès hal-01798417 v1

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy

E. Luna , B. Satpati , B.H. Hong , S. I. Rybchenko , Jean-Baptiste Rodriguez et al.
15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), 2009, Zakopane, Poland
Communication dans un congrès hal-01827641 v1

GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm

Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié
CLEO Europe - EQEC 2009, Jun 2009, Munich, Germany. pp.1-1, ⟨10.1109/CLEOE-EQEC.2009.5192675⟩
Communication dans un congrès hal-00429890 v1

Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate

J.-B. Rodriguez , L. Cerutti , E. Tournié
Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States
Communication dans un congrès hal-01828217 v1

Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs Substrate

L. Cerutti , J.-B. Rodriguez , P. Grech , Eric Tournié
Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States
Communication dans un congrès hal-01828223 v1

Nanostructure Devices for Optoelectronics

E. Tournié
E-nano2009, 2009, Choroni, Venezuela
Communication dans un congrès hal-01826612 v1

Mid-IR Sb-based emitters and detectors

E. Tournié
WOCSDICE 2009, 2009, Malaga, Spain
Communication dans un congrès hal-01826607 v1

Epitaxie par jets moléculaires de boîtes quantiques InSb

N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati , E. Luna et al.
12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France
Communication dans un congrès hal-01826576 v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

Laurent Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier et al.
International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès hal-01785734 v1

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

E. Luna , F. Ishikawa , B. Satpati , Jean-Baptiste Rodriguez , E. Tournié et al.
International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès hal-01825828 v1

MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

A. Gassenq , L. Cerutti , Alexei Baranov , E. Tournié
International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès hal-01825818 v1

InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperature

A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié
MIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès hal-01826454 v1

Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm

A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié
12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France
Communication dans un congrès hal-01826580 v1

Strain relaxation mechanism in the MBE grown InSb/GaSb material system

B. Satpati , E. Luna , A. Trampert , N. Deguffroy , V. Tasco et al.
International Symposium on Compound Semiconductors 2008 (ISCS2008), 2008, Rust, Germany
Communication dans un congrès hal-01826523 v1

Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applications

F. Genty , L. Cerutti , A. Ducanchez , P. Grech , Eric Tournié
MIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès hal-01785770 v1

Conduction-band G-L crossover in III-V GaSb SAQDs induced by lattice mismatch strain

S. Rybchenko , R. Gupta , K. Lai , I. Itskevich , S Haywood et al.
One-Day Quantum Dot meeting, Imperial College, London, U.K., 11 January 2008, 2008, London, United Kingdom
Communication dans un congrès hal-01785078 v1

EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties

A. N. Titkov , A. V. Ankudinov , M. S. Dunaevskii , K. S. Ladutenko , V. P. Evtikvhiev et al.
XII International Symposium on Nanophysics and Nanoelectronics, 2008, Nizhny Novgorod, Russia
Communication dans un congrès hal-01826457 v1

720 mW continuous wave room temperature operation diode laser emitting at around 2.4μm

Yves Rouillard , Eric Tournié , Michel Krakowski
Technologies for optical countermeasures II (SPIE), 2005, Bruges, Belgium
Communication dans un congrès hal-01798520 v1

Carrier recombination processes in GaAsN: from the dilute limit to alloying

Romuald Intartaglia , Thierry Taliercio , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet et al.
E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
Communication dans un congrès hal-01310044 v1

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

Romuald Intartaglia , Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Pierre Valvin et al.
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩
Communication dans un congrès istex hal-01312489 v1

Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN

Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Marie-Amandine Pinault , Eric Tournié
International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩
Communication dans un congrès istex hal-01319577 v1
Image document

Threading and misfit dislocations study by Electron Channeling Contrast Imaging

Audrey Gilbert , Ariane Meguekam-Sado , Eric Tournié , Jean-Baptiste Rodriguez
Euro MBE 2025, Mar 2025, Auron, France
Poster de conférence hal-04992047 v1
Image document

Kinetic Monte Carlo simulation of GaAs growth on (001) Silicon

Milan Silvestre , Audrey Gilbert , Stefano Calcaterra , Giovanni Isella , Jean-Baptiste Rodriguez et al.
Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.
Poster de conférence hal-04738181 v1
Image document

Intégration de laser cascade interbande sur plateforme photonique SiGe par micro transfer-printing

Yannis Billiet , Céline Chevalier , Xavier Letartre , Jean -Louis Leclercq , Pierre Cremillieu et al.
JNMO 2024 - Journées Nano, Micro, et Optoélectronique, Oct 2024, Sète, France.
Poster de conférence hal-04864948 v1
Image document

Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics

Milan Silvestre , Audrey Gilbert , Stefano Calcaterra , Giovanni Isella , Jean-Baptiste Rodriguez et al.
Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.
Poster de conférence hal-04738104 v1
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Intégration par Micro-Transfer-Printing de source ICL sur plateforme photonique Si/SiGe

Yannis Billiet , Céline Chevalier , Xavier Letartre , Jean -Louis Leclercq , Pierre Cremillieu et al.
Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication, Nov 2024, Saint etienne, France
Poster de conférence hal-04865345 v1
Image document

Type-I and type-II interband cascade lasers emitting around 2.7 µm

Maeva Fagot , Daniel Andrés Díaz-Thomas , Yves Rouillard , Jean-Baptiste Rodriguez , Eric Tournié et al.
Journées Nano, Micro et Optoelectronique (JNMO) 2024, Oct 2024, Sète, France
Poster de conférence hal-04738411 v1
Image document

Intégration de source ICL sur plateforme SiGe par micro transfer-printing

Yannis Billiet , Céline Chevalier , Xavier Letartre , Jean -Louis Leclercq , Christian Grillet et al.
Journées Nationales d'Optique Guidée, Jul 2024, Rouen, France
Poster de conférence hal-04865317 v1

Direct growth of GaSb on Ge, Ge-on-Si and SiGe-on-Si platforms for integrated mid infra-red photonics

Milan Silvestre , Jean-Baptiste Rodriguez , Stefano Calcaterra , Giovanni Isella , Eric Tournié
The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan
Poster de conférence hal-04737853 v1
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MIR Sb-based Interband cascade lasers on metamorphic substrates

Maeva Fagot , Daniel Andres Diaz-Thomas , Audrey Gilbert , Michel Ramonda , Gad Kombila et al.
International Nano-Optoelectronics Workshop (iNOW) 2023, Jul 2023, Würzburg, Germany. 2023
Poster de conférence hal-04282939 v1
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ICLs à 3,3 µm sur substrats de GaSb, GaAs et Si (001)

Maeva Fagot , Daniel Andres Diaz-Thomas , Audrey Gilbert , Michel Ramonda , Gad Kombila et al.
GDR MatEpi 2023, Jul 2023, Paris, France. 2023
Poster de conférence hal-04282846 v1
Image document

Type-II Interband cascade lasers grown on (100) GaAs substrates

Maeva Fagot , Daniel Andres Diaz Thomas , Michel Ramonda , Gad Kombila , Jean-Baptiste Rodriguez et al.
21st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain. 2023
Poster de conférence hal-04282761 v1

Effectiveness of AlSb dislocation filter layer during GaSb‐on‐Si epitaxy

Karl Graser , Audrey Gilbert , Steffen Richter , Jean-Baptiste Rodriguez , Laurent Cerutti et al.
Euro MBE 2023, Apr 2023, Madrid, Spain.
Poster de conférence hal-04739795 v1

Epitaxy and Characterization of InP/InGaAs Tandem Solar Cells grown by MOVPE on InP and Si Substrate

Stefano Soresi , Mattia da Lisca , Claire Besançon , Nicolas Vaissiere , Alexandre Larrue et al.
8th World Conference on Photovoltaic Energy Conversion (WCPEC-8), Sep 2022, Milan, Italy
Poster de conférence hal-03878592 v1

Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSb

Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard et al.
Journées Nationales du Photovoltaïque, Nov 2021, Dourdan, France
Poster de conférence hal-03641823 v1

In situ determination of the optimized growth conditions of GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez
10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France
Poster de conférence hal-02327276 v1

Ga(In)SbBi alloys for mid-IR applications: growth and characterization

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez
16èmes journées Nano, Micro et Optoélectronique, 2018, Cap Esterel, France
Poster de conférence hal-02327294 v1

GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization

Olivier Delorme , Laurent Cerutti , Robert Kudrawiec , Esperanza Luna , J. Kopaczek et al.
34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France
Poster de conférence hal-02327289 v1

Growth and characterization of high Bi-content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez
19th European Workshop on Molecular Beam Epitaxy, 2017, Saint-Petersburg, Russia
Poster de conférence hal-02327303 v1
Image document

Journées Nano, Micro et Optoélectronique (JNMO)

Jean-Philippe Perez , Fernando Gonzalez-Posada Flores , Aurore Vicet , Laurent Cerutti , Eric Tournié et al.
Journées Nano, Micro et Optoélectronique (JNMO) 2024, 2024
Proceedings/Recueil des communications hal-04904732 v1
Image document

GaSbBi alloys and heterostructures: fabrication and properties

O. Delorme , L. Cerutti , R. Kudrawiec , Esperanza Luna , J. Kopaczek et al.
Wang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8. ⟨10.1007/978-981-13-8078-5_6⟩
Chapitre d'ouvrage hal-02326182 v1

Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices

Eric Tournié
Molecular Beam Epitaxy, John Wiley & Sons Ltd, pp.233-246, 2019, 978-1-119-35502-1. ⟨10.1002/9781119354987.ch14⟩
Chapitre d'ouvrage hal-02342601 v1

Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si

Eric Tournié , Jean-Baptiste Rodriguez , Laurent Cerutti , Roland Teissier , Alexei Baranov
Silicon Photonics, 99, Academic Press, pp.1-25, 2018, Semiconductor and Semimetals, 978-0-12-815099-3. ⟨10.1016/bs.semsem.2018.08.002⟩
Chapitre d'ouvrage hal-02342602 v1

GaSb Lasers Grown on Silicon Substrate for Telecom Applications

Eric Tournié , Andrea Castellano , Karine Madiomanana , Grégoire Narcy , Alexandre Garreau et al.
Molecular Beam Epitaxy, Elsevier, pp.625-635, 2018, 978-0-12-812136-8. ⟨10.1016/B978-0-12-812136-8.00029-3⟩
Chapitre d'ouvrage hal-02342603 v1

Mid-Infrared Semiconductor Lasers

Eric Tournié , Alexei Baranov
Advances in Semiconductor Lasers, 86, Academic Press, pp.183-226, 2012, Semiconductors and Semimetals, 978-0-12-391066 0. ⟨10.1016/B978-0-12-391066-0.00005-8⟩
Chapitre d'ouvrage hal-02342607 v1

Photo- and electro- luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes

A. Hierro , J.-M. Ulloa , J. Miguel-Sanchez , A., Guzman Fernandez , Achim Trampert et al.
Nitrides and diluted nitrides: Growth, physics and devices, Research Signpost, pp.77-98, 2007, 978-81-7895-250-5
Chapitre d'ouvrage hal-02342608 v1

Mixed III-V-N semiconductors: a challenge for tomorrow?

E. Tournié , Bernard Gil
Low-Dimensional Nitride Semiconductors, Oxford University Press, pp.415-455, 2002, 9780198509745
Chapitre d'ouvrage hal-02342609 v1

Mid-infrared Optoelectronics

Eric Tournié , Laurent Cerutti
Woodhead Publishing. , 2019, 9780081027097
Ouvrages hal-02369706 v1

Semiconductor lasers

Alexei Baranov , Eric Tournié
Woodhead Publishing Limited, 33, 2013, Woodhead Publishing Series in Electronic and Optical Materials, 9780857091215. ⟨10.1533/9780857096401⟩
Ouvrages hal-02342605 v1