Eric TOURNIE

405
Documents

Publications

Publications

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Growth and study of Sb-based Interband Cascade Laser on GaSb, GaAs and Si substrates

Maëva Fagot , Daniel Andrés Díaz-Thomas , Julie Goutorbe , Yves Rouillard , Jean-Baptiste Rodriguez et al.

6th International workshop on opportunities and challenges in mid-infrared laser-based gas sensing (mirs6ens), Jan 2026, Wurtzburg, Germany

Communication dans un congrès hal-05454923v1

STRUCTURE ATOMIQUE DES PAROIS D’INVERSION DANS LES COUCHES DE SEMICONDUCTEURS III-V EPITAXIEES SUR SUBSTRAT SILICIUM (100)

Gilles Patriarche , Alexandre Beck , Laurent Pedesseau , Rozenn Bernard , Konstantinos Pantzas et al.

19ème colloque de la Société française des Microscopies, Jun 2025, Toulouse, France

Communication dans un congrès hal-05205424v1
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Direct MBE growth of GaSb on Ge, Ge-on-Si and Ge-on-SiGe-on-Si platforms for integrated mid-infrared photonics

M Silvestre , S Lacaze , A Gilbert , A de Cerdeira Oliveira , D Impelluso et al.

EUROMBE 2025, Mar 2025, Saint-Etienne-de-Tinée (06660), France

Communication dans un congrès hal-04992077v1
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Type-II Interband Cascade Laser Monolithically Integrated on Si Substrate

Maëva Fagot , Daniel Andrés Díaz-Thomas , Diba Ayache , Yves Rouillard , Aurore Vicet et al.

Compound Semiconductor Week 2025, May 2025, Banff (Alberta), Canada

Communication dans un congrès hal-05095424v1

Sb-based lasers epitaxially grown on Si(001) for midinfrared applications

L. Cerutti , Daniel Andrés Díaz-Thomas , Maëva Fagot , Audrey Gilbert , Michele Paparella et al.

2025 IEEE Photonics Conference (IPC), Nov 2025, Singapore, France. pp.1-1, ⟨10.1109/IPC65510.2025.11282355⟩

Communication dans un congrès hal-05454970v1

Interband cascade lasers emitting below 3 µm grown on GaAs substrate

Maëva Fagot , Daniel Andrés Díaz-Thomas , Yves Rouillard , Jean-Baptiste Rodriguez , Eric Tournié et al.

The 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France

Communication dans un congrès hal-04997754v1

MBE growth of interband antimonide lasers on silicon

L Cerutti , Maëva Fagot , Daniel Andrés Díaz-Thomas , Andres Remis , Audrey Gilbert et al.

39th North American Molecular Beam Epitaxy Conference (NAMBE 2025), Aug 2025, Santa Ana Pueblo-Albuquerque, NM, United States

Communication dans un congrès hal-05454901v1
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Micro-Transfer-Printing integration of interband cascade lasers on Si

Yannis Billiet , Céline Chevalier , Xavier Letartre , Jean-Louis Leclercq , Pierre Cremillieu et al.

Optica Advanced Photonics Congress 2025, Jul 2025, Marseille, France

Communication dans un congrès hal-05355773v1

III-V/Si Heteroepitaxy: Understanding and Mastering Growth Fundamentals

Sreejith Pallikkara Chandrasekharan , Audrey Gilbert , Chen Wei , Federico Panciera , Laurent Travers et al.

24th American Conference on Crystal Growth and Epitaxy (ACCGE-24), Jul 2025, Stevenson, United States

Communication dans un congrès hal-05204877v1

Reducing defect density in the epitaxy of III-Vs on Silicon substrates

Audrey Gilbert , Eric Tournié , Gilles Patriarche , C. Cornet , Michel Ramonda et al.

ICG2025, Jan 2025, LECCE, Italy

Communication dans un congrès hal-04907295v1

Mid-IR GaSb-based lasers grown on Si platforms

Eric Tournié , Michele Paparella , Andres Remis , D. Díaz-Thomas , Maeva Fagot et al.

SPIE Photonics West 2025, SPIE, Jan 2025, San Francisco (CA, USA), United States

Communication dans un congrès hal-04934677v1

MBE growth of mid-IR interband cascade lasers

Maëva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Yves Rouillard , Jean-Baptiste Rodriguez et al.

The 22nd EuroMBE Workshop, CRHEA, Mar 2025, Auron, France

Communication dans un congrès hal-04997749v1

Optimization of AlSb dislocation filter layer for GaSb-based quantum well lasers grown on Si(001)

Karl Graser , Audrey Gilbert , Steffen Richter , Laurent Cerutti , Jean-Baptiste Rodriguez et al.

EMRS Spring Meeting, May 2024, Strasbourg, France

Communication dans un congrès hal-04739759v1

III-V/Si epitaxial growth and antiphase domains: a matter of symmetry

C. Cornet , Sreejith Pallikkara Chandrasekharan , Audrey Gilbert , Divita Gupta , Philippe Vennéguès et al.

OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France

Communication dans un congrès hal-04738319v1

Effect of a AlSb filter layer on threading dislocation density during GaSb-on-Si epitaxy

Karl Graser , Audrey Gilbert , Steffen Richter , Jean-Baptiste Rodriguez , Eric Tournié et al.

DPG Frühjahrstagung (German Physical Society Spring Meeting), Mar 2024, Berlin, Germany

Communication dans un congrès hal-04739768v1
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Revisiting the epitaxy of III-Vs on group-IV substrates

Audrey Gilbert , Gilles Patriarche , C. Cornet , Eric Tournié , Michel Ramonda et al.

The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan

Communication dans un congrès hal-04737783v1
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The direct epitaxial growth of III-Vs on Silicon substrate

Audrey Gilbert , Eric Tournié , Gilles Patriarche , C. Cornet , Michel Ramonda et al.

Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sete, France

Communication dans un congrès hal-04737922v1

Electron Channeling Contrast Imaging for epi-layer structural defect characterization

Audrey Gilbert , Ariane Meguekam Sado , Eric Tournié , Jean-Baptiste Rodriguez

OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France

Communication dans un congrès hal-04738266v1
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New InGaAsSb based T2SL for MWIR detection

Théo Sabardeil , E. Izquierdo , Gabin Grégoire , Bouzid Simozrag , Virginie Trinite et al.

The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan

Communication dans un congrès hal-04738225v1
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Epitaxy of III-V semiconductors: some challenges and evolutions

Eric Tournié

OSEPI : Epitaxie des oxydes et des semiconducteurs, GDR MATEPI, May 2024, Fréjus, France

Communication dans un congrès hal-04660279v1

Integration of mid-IR semiconductor lasers and Si-photonics circuits

Eric Tournié

29th International Semiconductor Laser Conference, IEEE, Sep 2024, Orlando (FL), United States

Communication dans un congrès hal-04740218v1

Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks

Audrey Gilbert , Karl Graser , Michel Ramonda , Achim Trampert , Eric Tournié et al.

The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan

Communication dans un congrès hal-04737830v1

Single mode distributed feedback interband cascade lasers grown on Si substrate

Daniel Andres Diaz Thomas , Maëva Fagot , Gad Ndemengoye-Kombila , Audrey Gilbert , Diba Ayache et al.

Novel In-Plane Semiconductor Lasers XXIII, Jan 2024, San Francisco, United States. pp.53, ⟨10.1117/12.3003764⟩

Communication dans un congrès hal-04996188v1

Mid-infrared Semiconductor Lasers Grown on group-IV Platforms

Eric Tournié , Audrey Gilbert , Maeva Fagot , Milan Silvestre , Andres Remis et al.

36th International Conference on the Physics of Semiconductors (ICPS 2024), Jul 2024, Ottawa (Ontario), Canada

Communication dans un congrès hal-04754234v1
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Investigation of Intensity Noise in an Interband Cascade Laser Epitaxially Grown on Silicon and Designed for High-speed Applications

Hyunah Kim , Pierre Didier , Sara Zaminga , Heming Huang , Daniel Andrés Díaz-Thomas et al.

2024 Conference on Lasers and Electro-Optics (CLEO 2024), May 2024, Charlotte, NC, United States

Communication dans un congrès hal-04996211v1

Direct epitaxy of lasers on Si: challenges and solutions

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Michel Ramonda , Yves Rouillard et al.

OSEPI : Epitaxie des oxydes et des semiconducteurs, May 2024, Fréjus, France

Communication dans un congrès hal-04739852v1

Type-I and type-II interband cascade lasers emitting below 3 µm

Maeva Fagot , Daniel Andrés Díaz-Thomas , Yves Rouillard , Jean-Baptiste Rodriguez , Eric Tournié et al.

Compound Semiconductor Week (CSW) 2024, Jun 2024, Lund, Sweden

Communication dans un congrès hal-04739882v1

Interband cascade lasers on mismatched substrates emitting above 4 µm

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Gad Kombila , Michel Ramonda et al.

The 23rd International Conference on Molecular Beam Epitaxy (ICMBE), Sep 2024, Matsue, Shimane, Japan

Communication dans un congrès hal-04739914v1

Understanding III-V/Si Heteroepitaxy: Experiments and Theory

Charles Cornet , Audrey Gilbert , Sreejith Pallikkara Chandrasekharan , Divishth Gupta , Laurent Cerutti et al.

8th European conference on crystal growth, Jul 2024, Warsaw, Poland

Communication dans un congrès hal-04745129v1

Mid-IR lasers epitaxially integrated onto Si

E Tournié , A Remis , M Paparella , A Gilbert , L Monge-Bartolomé et al.

45th Freiburg Infrared Colloquium, May 2023, Freiburg (Allemagne), Germany

Communication dans un congrès hal-04121335v1

Wetting properties of heteroepitaxial systems determined from surface and interface energies calculations

Sreejith Pallikkara Chandrasekharan , D Gupta , Anne Ponchet , Gilles Patriarche , Jean-Baptiste Rodriguez et al.

“Fundamental research – New materials” COST 2023 workshop, Apr 2023, Madrid, France

Communication dans un congrès hal-04224975v1

GaSb-based ICLs grown on GaSb, GaAs and Si substrates

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Gad Kombila , Yves Rouillard et al.

Mid-IR Optoelectronics: Materials and Devices XVI, Aug 2023, Norman, Oklahoma, United States

Communication dans un congrès hal-04738303v1

Epitaxial integration of mid-infrared III-V devices on group-IV substrates

Eric Tournié , J.-B. Rodriguez , L. Cerutti , A. Gilbert , M. Silvestre et al.

E-MRS ( European Materials Research Society ) Fall Meeting 2023, Symposium A, E-MRS, Sep 2023, Warsaw, Poland

Communication dans un congrès hal-04245650v1

Integration of Mid-IR lasers and Si photonics circuits

Tournié Eric , M. Paparella , A. Remis , A. Gilbert , M. Rio-Calvo et al.

European Semiconductor Laser Workshop, University of Glasgow, Sep 2023, Glasgow, United Kingdom

Communication dans un congrès hal-04245702v1

Near-field thermal radiation, thermophotovoltaics and polaritons

Christophe Lucchesi , Julien Legendre , Thomas Châtelet , Dilek Cakiroglu , Jean-Philippe Perez et al.

Thermal Polaritonics Workshop, Apr 2023, Tokyo, France

Communication dans un congrès hal-04310983v1

Butt-coupling of semiconductor lasers and passive waveguides by direct epitaxy on patterned Si photonic wafers

A Remis , M Paparella , A Gilbert , L Monge-Bartolome , G Boissier et al.

Compound Semiconductor Week 2023, May 2023, Jeju City, Jeju Island, South Korea

Communication dans un congrès hal-04121366v1

Low bandgap (near-field) TPV: materials and structures

Rodolphe Vaillon , Basile Roux , Christophe Lucchesi , Nacira Hanouf , Dilek Cakiroglu et al.

The 14th World Conference on Thermophotovoltaic Generation of Electricity (TPV-14), Andrej Lenert, May 2023, Online, United States

Communication dans un congrès hal-04156802v1

Solid-state/optical alternatives to thermoelectricity for thermal-to-electrical energy conversion

Christophe Lucchesi , Julien Legendre , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.

18th European Conference on Thermoelectrics (ECT), Oct 2022, Barcelona, Spain

Communication dans un congrès hal-03813779v1

Controlling near-field thermal energy for conversion devices and sensing

Christophe Lucchesi , Julien Legendre , Khac-Long Nguyen , Ahmed Alwakil , Dilek Cakiroglu et al.

Program on Emerging Regimes and Implications of Quantum and Thermal Fluctuational Electrodynamics (Flectro2022), Kavli Institute of Theoretical Physics (KITP), Jul 2022, UC Santa Barbara, United States. ⟨10.26081/K6R93X⟩

Communication dans un congrès hal-03813941v1

Cascade lasers epitaxially grown on Silicon substrates

Jean-Baptiste Rodriguez , Laurent Cerutti , A.N. Baranov , Audrey Gilbert , M Rio-Calvo et al.

International Quantum Cascade Lasers School and Workshop, Aug 2022, Zurich - Ascona, Switzerland

Communication dans un congrès hal-03771073v1

Molecular beam epitaxy of III-V semiconductors on group-IV (001) substrates: Formation and burying of antiphase domains.

Audrey Gilbert , Jean-Baptiste Rodriguez , Marta Rio Calvo , Michel Ramonda , Laurent Cerutti et al.

22nd International Conference on Molecular-Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom

Communication dans un congrès hal-03806222v1
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Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms

Michele Paparella , Laura Monge-Bartolomé , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande et al.

2022 IEEE International Photonics Conference, Nov 2022, Vancouver, Canada. ⟨10.1109/IPC53466.2022.9975716⟩

Communication dans un congrès hal-03906450v1

Mid-IR lasers epitaxially grown on on-axis (001) Silicon

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel A Diaz-Thomas et al.

Novel In-Plane Semiconductor Lasers XX, Mar 2021, Online Only, United States. pp.35, ⟨10.1117/12.2576790⟩

Communication dans un congrès hal-03184742v1

Is a substrate miscut really required for high quality III-V/Si monolithic integration?

Charles Cornet , Simon Charbonnier , Ida Lucci , Lipin Chen , Antoine Létoublon et al.

21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico

Communication dans un congrès hal-03402689v1

Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)

Jean-Baptiste Rodriguez , M Rio Calvo , Charles Cornet , Laurent Cerutti , M Ramonda et al.

21st International Conference on Molecular-Beam Epitaxy (IC-MBE 2021), Sep 2021, online, Mexico

Communication dans un congrès hal-03336876v1

Mid-infrared laser diodes grown on various on-axis III-V-on-Si templates

Laura Monge-Bartolome , Tiphaine Cerba , Mickaël Martin , Marta Rio Calvo , Jean-Baptiste Rodriguez et al.

Compound Semiconductor Week (CSW2021), May 2021, Stockholm (on line), Sweden

Communication dans un congrès hal-03336846v1

Mid-IR lasers monolithically integrated on on-axis Silicon

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel Andres Diaz Thomas et al.

CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany

Communication dans un congrès hal-03336448v1

MONOLITHIC INTEGRATION OF MID-IR LASERS ON SILICON

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Roland Teissier et al.

8th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano), Aug 2021, Milano (on line), Italy

Communication dans un congrès hal-03336686v1

Analysis of the coupling efficiency between monolithically integrated GaSb laser diodes and SiNx waveguides

Michele Paparella , Laura Monge-Bartolome , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande et al.

15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom

Communication dans un congrès hal-03336700v1

Hybrid ambipolar 2D semimetal/semiconductor III-V/Si heterostructures: Promises for photonics, energy harvesting and electronics

Charles Cornet , Lipin Chen , Mekan Piriyev , Jean-Baptiste Rodriguez , Gabriel Loget et al.

Webinar on Materials science, engineering and technology - VEBLEO, VEBLEO international organization, Dec 2021, virtual, India

Communication dans un congrès hal-03588366v1

Toward mid-infrared laser diodes on Silicon photonic integrated circuits

Laura Monge-Bartolome , Marta Rio Calvo , Michaël Bahriz , Jean-Baptiste Rodriguez , Laurent Cerutti et al.

CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany

Communication dans un congrès hal-03336233v1

Temperature and High Hydrostatic Pressure Investigations of Epitaxially Grown 2.3-µm GaSb lasers on Si

A. R. Ellis , I. P. Marko , T. D. Eales , Laurent Cerutti , Marta Rio Calvo et al.

15th Mid-Infrared Optoelectronic Materials and Devices (MIOMD-XV), Sep 2021, Guildford (on line), United Kingdom

Communication dans un congrès hal-03336838v1
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Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layers

Daniel Andres Díaz Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte et al.

Compound Semiconductor Week 2021 (CSW 2021), May 2021, Stockholm (online), Sweden

Communication dans un congrès hal-03358749v1

Low-energy bandgap thermophotovoltaic cells for harnessing near-field thermal photons

Dilek Cakiroglu , Christophe Lucchesi , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.

C’Nano 2020, The Nanoscience meeting, Nov 2021, Toulouse, France

Communication dans un congrès hal-03457483v1

Low-energy bandgap thermophotovoltaic cells for medium-grade heat sources

Dilek Cakiroglu , Jean-Philippe Perez , Axel Evirgen , Christophe Lucchesi , Pierre-Olivier Chapuis et al.

2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France

Communication dans un congrès hal-03437899v1

Carrier recombination and temperature-dependence of GaInSb quantum well lasers for silicon photonics applications

C. R. Fitch , G. W. Read , I. P. Marko , D. A. Duffy , Laurent Cerutti et al.

CLEO/EUROPE-EQEC 2021, Jun 2021, Munich, Germany

Communication dans un congrès hal-03336249v1

Efficient near-field thermophotovoltaic conversion with InSb cells

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.

2021 Spring Meeting of the European Materials Research Society (E-MRS), May 2021, En ligne, France

Communication dans un congrès hal-03438226v1

Etched-facets Mid-IR laser on on-axis Silicon substrate for photonic integrated circuits

Laura Monge-Bartolomé , Marta Rio Calvo , M. Bahriz , Jean-Baptiste Rodriguez , Laurent Cerutti et al.

Semiconductor and Integrated Optoelectronics Conference, Mar 2021, on line, United Kingdom

Communication dans un congrès hal-03187613v1
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Sb-based Mid-IR lasers grown by MBE on Silicon(001)

Marta Rio Calvo , Jean-Baptiste Rodriguez , Laura Monge Bartolome , Laurent Cerutti , Zeineb Loghmari et al.

21st International Conference on Molecular Beam Epitaxy, Sep 2021, Online, Mexico

Communication dans un congrès hal-03377236v1

Near-field thermophotovoltaic conversion with high electrical power density and efficiency above 14%

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.

MRS Spring meeting, Symposium "Nanoscale heat transport", Apr 2021, Seattle (remote), United States

Communication dans un congrès hal-03649749v1

Mid-infrared III-V semiconductor lasers grown on (001)Silicon substrates

Eric Tournié , Laura Monge-Bartolome , Marta Rio Calvo , Daniel Andres Diaz Thomas , Zeineb Loghmari et al.

2021 IEEE Summer Topicals Meeting Series, Jul 2021, On line, United States

Communication dans un congrès hal-03336669v1

Efficient near-field thermophotovoltaic conversion with InSb cells

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.

SFT "Nanoscale Heat Transport Days", Jan 2020, Paris, France

Communication dans un congrès hal-02459116v1

Recent advances in near-field thermophotovoltaics

Rodolphe Vaillon , Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.

sTE2C virtual colloquium, Daniele M. Trucchi, Gaspare Varvaro (CNR-ISM, Roma, Italy), Nov 2020, Online, Italy

Communication dans un congrès hal-03018774v1

Mid-IR lasers sources monolithically integrated on Si substrates

Eric Tournié , Marta Rio Calvo , Laura Monge-Bartolome , Zeineb Loghmari , Daniel Andres Diaz Thomas et al.

SPIE Photonex & Vacuum Expo Digital Forum, Emerging Applications in Silicon Photonics, SPIE, Oct 2020, on line, United Kingdom

Communication dans un congrès hal-03184754v1
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Progress in Interband Cascade Lasers: from edge emitting lasers to VCSELs

Stéphane Calvez , Oleksandr Stepanenko , Daniel A Díaz-Thomas , Thomas Batte , M. Bahriz et al.

2020 22nd International Conference on Transparent Optical Networks (ICTON), Jul 2020, Bari, Italy. pp.1-4, ⟨10.1109/ICTON51198.2020.9203274⟩

Communication dans un congrès hal-02996714v1

Epitaxial Integration of GaSb-based mid-IR devices on Silicon

E. Tournié , Jean-Baptiste Rodriguez , L Cerutti , Roland Teissier , Alexei Baranov

Light Conference 2019, Jul 2019, Changchun, China

Communication dans un congrès hal-02342611v1

Potential of AlGaAsSb alloys for GaSb-based multi-junction solar cells

S. Parola , Joanna Kret , A. Vauthelin , Julie Tournet , Frédéric Martinez et al.

Forum of Revolutions in Renewable Energy in 21th Century (FOREN-2019), Oct 2019, Rome, Italy

Communication dans un congrès hal-02382507v1

Near-field radiative heat transfer experiments and thermophotovoltaic conversion

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.

Focus Session on « Fluctuational Electrodynamics and Heat Transfer », Progress In Electromagnetism Research (PIERS) 2019 conference, Jun 2019, Rome, Italy

Communication dans un congrès hal-02043078v1

Near-field radiative heat transfer measurements between a sphere and a substrate: large temperature differences, geometrical effects and materials

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.

MRS Spring Meeting Symposium "Nanoscale Heat Transport: Fundamentals", Apr 2019, Phoenix, United States

Communication dans un congrès hal-02043071v1

InAs/AlSb quantum cascade lasers grown on silicon substrates (Conference Presentation)

Eric Tournié , Hoang Nguyen Van , Zeineb Loghmari , Laurent Cerutti , Jean-Baptiste Rodriguez et al.

Quantum Sensing and Nano Electronics and Photonics XVI, Feb 2019, San Francisco, United States. pp.10926-41

Communication dans un congrès hal-02342613v1

Characterization and numerical analysis of III-Sb tandem solar cells

Joanna Kret , S. Parola , J. Tournet , Yves Rouillard , Eric Tournié et al.

Journées Nationales du Photovoltaïque, Dec 2019, Dourdan, France

Communication dans un congrès hal-02382568v1

Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates

Jean-Baptiste Rodriguez , M. Rio Calvo , Laurent Cerutti , Laura Monge-Bartolomé , M. Bahriz et al.

The 9th International Symposium on Photonics and Electronics Convergence, Nov 2019, Tokyo, Japan

Communication dans un congrès hal-02383950v1

Transmission Electron Microscopy of (In,Ga)(Sb,Bi) epilayers and quantum wells

Esperanza Luna , Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez et al.

10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France

Communication dans un congrès hal-02327205v1

Study of In incorporation into GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié et al.

20th European Workshop on Molecular Beam Epitaxy, 2019, Lenggries, Germany

Communication dans un congrès hal-02327229v1

Molecular-beam epitaxy of GaInSbBi alloys and QWs

Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié et al.

10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France

Communication dans un congrès hal-02327216v1

Mid-IR lasers epitaxially grown on silicon

E. Tournié , J.B. Rodriguez , Laurent Cerutti , M. Rio Calvo , Laura Monge-Bartolomé et al.

GDR nanoTERAMIR, Jun 2019, Agay, France

Communication dans un congrès hal-02342614v1
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Towards MIR VCSELs operating in CW at RT

Daniel Andres Diaz Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , Thomas Batte et al.

Compound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. ⟨10.1109/iciprm.2019.8819164⟩

Communication dans un congrès hal-03012184v1

Near-field thermophotovoltaic conversion with InSb cells

C. Lucchesi , D. Cakiroglu , J.-P. Perez , T. Taliercio , E. Tournié et al.

E-MRS Fall Meeting Symposium "Nanomaterials thermal transport properties and nanothermodynamics, Sep 2019, Varsovie, Poland

Communication dans un congrès hal-02379726v1

Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

Q. Durlin , J.P. Perez , L. Cerutti , J.B. Rodriguez , T. Cerba et al.

QSIP2018, Jun 2018, Stockholm, Sweden. pp.39-43, ⟨10.1016/j.infrared.2018.10.006⟩

Communication dans un congrès hal-01947798v1

A universal mechanism to describe III-V epitaxy on Si

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.

20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany

Communication dans un congrès hal-02048639v1

Mesures expérimentales du transfert radiatif en champ proche et de la conversion thermophotovoltaïque

Christophe Lucchesi , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio , Eric Tournié et al.

Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France

Communication dans un congrès hal-02043083v1

GaSb materials and devices: the IR optoelectronics toolbox

E. Tournié

International Nano-Optoelectronics Workshop (iNOW 2019), Jul 2019, Guangzhou - Shenzhen, China

Communication dans un congrès hal-02342610v1

Antimonide-based optoelectronic devices grown on Si substrates (Conference Presentation)

Eric Tournié , Laurent Cerutti , Jean-Baptiste Rodriguez , Jean-Philippe Perez , Philippe Christol et al.

Silicon Photonics XIV, Feb 2019, San Francisco, United States. pp.10923-11

Communication dans un congrès hal-02342612v1

Characterization and pseudo-3D modeling of GaSb solar cells for high-concentration photovoltaics

Joanna Kret , S. Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet et al.

36th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), Sep 2019, Marseille, France

Communication dans un congrès hal-02382578v1

Etude expérimentale du transfert radiative en champ proche pour la conversion thermophotovoltaïque

Christophe Lucchesi , Pierre-Olivier Chapuis , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.

Journées Nationales sur l’Energie Solaire, Jun 2018, Villeurbanne, France

Communication dans un congrès hal-01832256v1

Investigation of GaSb solar cell with an AlGaAsSb window layer for applications as a bottom subcell of 4-junction solar cells

Joanna Kret , Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Yves Rouillard et al.

Journées Nationales du Photovoltaïque, Dec 2018, Dourdan, France

Communication dans un congrès hal-02061904v1

Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells

O. Delorme , L. Cerutti , R. Kudrawiec , E. Luna , J. Kopaczek et al.

20th International Conference on Molecular-Beam Epitaxy (MBE 2018), 2018, Shanghai, China

Communication dans un congrès hal-02078204v1

Quantum cascade lasers grown on silicon

A. N. Baranov , H. Nguyen-Van , Z. Loghmari , L. Cerutti , J.-B. Rodriguez et al.

18th Int. Conf. on Laser Optics, 2018, St Petersburg, Russia

Communication dans un congrès hal-02078298v1

GaP Template on Si for Solar Water Splitting: surface energy engineering

Laurent Pedesseau , Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban et al.

nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain

Communication dans un congrès hal-01909068v1

A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.

20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)

Communication dans un congrès hal-01910554v1

AlInAsSb for GaSb-based multi-junction solar cells

J. Tournet , Y. Rouillard , E. Tournié

Photonics West 2018, 2018, San Francisco, United States

Communication dans un congrès hal-02080336v1

Plasmonique tout-semi-conducteur pour les applications du moyen-infrarouge

F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti , E. Tournié et al.

Congrès de la Société Française d’Optique, 2018, Toulouse, France

Communication dans un congrès hal-02084338v1

Antimonide-based optoelectronic devices epitaxially grown on Silicon

E. Tournié , L. Cerutti , J.-B. Rodriguez , J.-P. Perez , A. N. Baranov et al.

International nano-optoelectronics workshop (iNOW 2018), 2018, Berkeley, United States

Communication dans un congrès hal-02078268v1

GaSb materials and devices: the IR toolbox

E. Tournié

UK Semiconductors, 2018, Sheffield, United Kingdom

Communication dans un congrès hal-02078273v1

Near-field radiative heat transfer experiments for thermophotovoltaic conversion

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.

5th International Conference on Near-Field Optics, Nanophotonics and Related Techniques (NFO), Aug 2018, Troyes, France

Communication dans un congrès hal-02025479v1

InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Reynald Alcotte , Bassem Salem et al.

19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan

Communication dans un congrès hal-01954906v1

(114) GaP surface texturation on Si for water splitting

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger et al.

EMRS Spring meeting 2018, Jun 2018, Strasbourg, France

Communication dans un congrès hal-01708047v1

Sb-based IR Detector and Emitter Materials

E. Tournié , A. N. Baranov , L. Cerutti , J.-P. Perez , J.-B. Rodriguez

Sb-based IR Detector and Emitter Materials, CSWeek 2018, 2018, Boston, United States

Communication dans un congrès hal-02078599v1

Design of efficient photovoltaic cells for near-field thermophotovoltaics

Daniel Milovich , John Desutter , Dilek Cakiroglu , Christophe Lucchesi , Pierre-Olivier Chapuis et al.

Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland

Communication dans un congrès hal-02021380v1

Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger et al.

20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)

Communication dans un congrès hal-01910556v1

On the origin of defects during III-Sb epitaxy on Si(001)

A. Trampert , M. Niehle , H. Drube , J.-B. Rodriguez , L. Cerutti et al.

2018 E-MRS Spring meeting, Symposium V, 2018, Strasbourg, France

Communication dans un congrès hal-02078642v1

Mid-IR Optoelectronic devices epitaxially grown on Silicon

E. Tournié , A. N. Baranov , L. Cerutti , J.-B. Rodriguez , R. Teissier

Mid-IR Optoelectronic devices epitaxially grown on Silicon, CLEO 2018, 2018, San Jose, United States

Communication dans un congrès hal-02078610v1

Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes

O. Delorme , L. Cerutti , E. Luna , R. Kudrawiec , J. Kopaczek et al.

14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018, Flagstaff, United States

Communication dans un congrès hal-02078153v1

III-V semiconductor plasmonics for microfluidic molecular sensing

M. Bomers , F. Barho , B. Charlot , A. Mezy , L. Cerutti et al.

Final conference of PROMIS, Photonics by the Lake, 2018, Windermere, United Kingdom

Communication dans un congrès hal-02084307v1

A general III-V/Si growth process description

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.

European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France

Communication dans un congrès hal-01910535v1

Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependence

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.

GDRe workshop on Thermal Nanosciences and NanoEngineering, Oct 2018, Lyon, France

Communication dans un congrès hal-01932675v1

III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation

Ida Lucci , Simon Charbonnier , Laurent Pedesseau , Maxime Vallet , Laurent Cerutti et al.

34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France

Communication dans un congrès hal-01910543v1

GaSb-based lasers in the telecom wavelength range monolithically integrated on Si

E. Tournié , L. Cerutti , J.-B. Rodriguez , A. Castellano , A. Garreau et al.

ECOC 2018, Workshop on Integrated Photonics, 2018, Rome, Italy

Communication dans un congrès hal-02078228v1

Surface enhanced infrared absorption with highly doped InAsSb plasmonic nanostructures

F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti , E. Tournié et al.

GDR NanoTeraMIR, 2018, Montpellier, France

Communication dans un congrès hal-02084508v1

Mid-Infrared 2.7 µm GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure

Igor Marko , Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez et al.

14th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2018, Flagstaff, United States

Communication dans un congrès hal-02327248v1

Thermophotovoltaic devices for solar and thermal energy conversion

Rodolphe Vaillon , Christophe Lucchesi , Etienne Blandre , Pierre-Olivier Chapuis , Dilek Cakiroglu et al.

Journées Nationales sur l'Énergie Solaire «Congrès JNES 2018», Jun 2018, Villeurbanne, France

Communication dans un congrès hal-01841462v1

Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells

Stéphanie Parola , Alexandre Vauthelin , Frédéric Martinez , Julie Tournet , Joanna El Husseini et al.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, France. pp.0937-0942

Communication dans un congrès hal-02052823v1

Near-field radiative heat transfer experiments for thermophotovoltaic conversion: temperature and material dependence

Christophe Lucchesi , Rodolphe Vaillon , Dilek Cakiroglu , Jean-Philippe Perez , Thierry Taliercio et al.

Eurotherm 111: Nanoscale and Microscale Heat Transfer VI, Dec 2018, Levi, Finland

Communication dans un congrès hal-02021385v1

GaSb oxidation for plasmonic enhanced mid-IR molecular spectroscopy

M. Bomers , F. Barho , A. Mezy , M. J. Milla , L. Cerutti et al.

Nanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain

Communication dans un congrès hal-01905752v1

GaSb-based lasers epitaxially grown on Si

E. Tournié , L. Cerutti , J.-B. Rodriguez , A. Castellano , G. Narcy et al.

E-MRS Fall meeting, Symposium, 2017, Warsaw, Poland

Communication dans un congrès hal-01905141v1

Mid-IR surface enhanced absorption spectroscopy with 1D Highly Si-Doped InAsSb nano-antennas

M. J. Milla , F. Gonzalez-Posada , L. Cerutti , F. Barho , M. Bomers et al.

E-MRS Spring Meeting, 2017, Strasbourg, France

Communication dans un congrès hal-01905789v1

Surface enhanced infrared absorption with highly doped InAsSb plasmonic nano-antenna arrays

F. Barho , M. J. Milla , M. Bomers , Fernando Gonzalez-Posada Flores , L. Cerutti et al.

Nanophotonics and Micro/Nano Optics International Conference, 2017, Barcelone, Spain

Communication dans un congrès hal-01905761v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.

E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland

Communication dans un congrès hal-01905730v1

Lasers à semiconducteurs intégrés sur Silicium

E. Tournié

Journées Nationales sur l’Optique Guidée (JNOG), 2017, Limoges, France

Communication dans un congrès hal-01905155v1

Metamorphic III-Sb lasers epitaxially grown on Si substrates

E. Tournié , L. Cerutti , J.-B. Rodriguez , G. Narcy , A. Castellano et al.

International School on Epitaxial Technologies of Novel materials and Nanostructures, 2017, St. Petersburg, Russia

Communication dans un congrès hal-01905208v1

Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications

E. Luna , A. Trampert , O. Delorme , L. Cerutti , E. Tournié et al.

8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany

Communication dans un congrès hal-01905702v1

High Bi-content GaSbBi alloys for mid-IR applications

O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez

CSWeek 2017, 2017, Berlin, Germany

Communication dans un congrès hal-01905735v1

Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

Tiphaine Cerba , Mickaël Martin , Jeremy Moeyaert , Sylvain David , Jean-Luc Rouvière et al.

2017 EMRS Fall Meeting, 2017, Warsaw, Poland

Communication dans un congrès hal-01891383v1

Plasmonic bio-sensing based on highly doped semiconductors

María-José Milla Rodrigo , Franziska Barho , Fernando Gonzalez-Posada Flores , Laurent Cerutti , Jean-Baptiste Rodriguez et al.

Optics + Photonics (SPIE), 2017, San Diego, United States

Communication dans un congrès hal-01905149v1

III-V/Si 3D crystal growth: a thermodynamic description

Ida Lucci , Simon Charbonnier , Maxime Vallet , Tony Rohel , Rozenn Bernard et al.

Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany

Communication dans un congrès hal-01708282v1

GaSbBi/GaSb quantum well laser diodes

Olivier Delorme , Laurent Cerutti , Esperanza Luna , Achim Trampert , Eric Tournié et al.

8th International Workshop on Bismuth-Containing Semiconductors, 2017, Marburg, Germany

Communication dans un congrès hal-02327190v1

Anti-phase boundary free GaSb layers grown on (001)-Si substrates by Metal Organic Chemical Vapor Deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J.-L. Rouvière et al.

17th European Workshop on Metalorganic Vapour Phase Epitaxy (EW-MOVPE17), 2017, grenoble, France

Communication dans un congrès hal-01891389v1

GaSbBi alloys for mid-infrared optoelectronics

O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez

Freiburg Infrared Colloqium, 2017, Freiburg, Germany

Communication dans un congrès hal-01905746v1

Metamorphic III-Sb lasers epitaxially grown on Silicon

L. Cerutti , J.-B. Rodriguez , A. Castellano , K. Madiomanana , G. Narcy et al.

19th European Workshop on Molecular-Beam Epitaxy, (Euro-MBE 2017), 2017, St. Petersburg, Russia

Communication dans un congrès hal-01905184v1

III-V lasers monolithically grown on Silicon

E. Tournié

IEEE Photonics Conference, 2016, Orlando, United States

Communication dans un congrès hal-01905127v1

Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez

19th International Conference on Molecular Beam Epitaxy, 2016, Montpellier, France

Communication dans un congrès hal-02327261v1

3.8 μm Heterogeneously Integrated III-V on Silicon Micro-Spectrometer

A. Vasiliev , M. Muneeb , A. Ruocco , A. Malik , H. Chen et al.

18th European Conference on Integrated Optics, 2016, Warsaw, Poland

Communication dans un congrès hal-01903732v1

Highly doped InAsSb plasmonic arrays for mid-infrared biosensing

F. Bahro , F. Gonzalez-Posada , M. J. Milla Rodrigo , M. Bomers , L. Cerutti et al.

IEEE Nanotechnology Materials and Devices Conferences (NDMC), 2016, Toulouse, France

Communication dans un congrès hal-01903761v1

GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range

A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , F. Lelarge et al.

19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France

Communication dans un congrès hal-01903690v1

All semiconductor plasmonics for bio-sensing

M. J. Milla , F. Barho , M. Bomers , F. Gonzalez-Posada , L. Cerutti et al.

International Conference on Energy, Materials & Photonics, 2016, Troyes, France

Communication dans un congrès hal-01903594v1

First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared

Benjamin Eggleton , G. Broderick , L. Gaeta , S. Roux , L. Cerutti et al.

SPIE Photonics Europe, 2016, Brussels, France. ⟨10.1117/12.2225441⟩

Communication dans un congrès hal-01759576v1

Surface-enhanced infrared absorption using highly doped InAsSb/GaSb Nanostructures

M. Milla-Rodrigo , F. Barho , F. Gonzalez-Posada , L. Cerutti , E. Tournié et al.

2016 MRS (Material Research Society) Fall Meeting, 2016, Boston, United States

Communication dans un congrès hal-01903778v1

Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez

13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), 2016, Beijing, China

Communication dans un congrès hal-02327267v1

Brewster mode : optical monitoring of the semiconductor doping level

Maria Jose Milla Rodrigo , Thierry Taliercio , Laurent Cerutti , Fernando Gonzalez-Posada Flores , Franziska Barho et al.

Photonic West OPTO (SPIE), 2016, San Francisco, United States

Communication dans un congrès hal-01903684v1

GaSb lasers grown on Silicon substrate for telecom application

A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , F. Lelarge et al.

19th Conference on Molecular Beam epitaxy (MBE2014), 2016, Montpellier, France

Communication dans un congrès hal-01903740v1

MBE growth of periodically-oriented GaSb on GaAs templates for frequency conversion in the mid-infrared wavelength range

L. Cerutti , S. Roux , G. Patriarche , M. Garcia , B. Gérard et al.

19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France

Communication dans un congrès hal-01903697v1

Tuning of the localized surface plasmon wavelength in highly doped InAsSb/GaSb nanostructures

María-José Milla Rodrigo , Franziska Barho , Fernando Gonzalez-Posada Flores , Laurent Cerutti , Jean-Baptiste Rodriguez et al.

Photonic West OPTO (SPIE), 2016, San Francisco, United States

Communication dans un congrès hal-01903606v1

Highly doped InAsSb nanoribbon on GaSb for plasmonics applications

M. Milla-Rodrigo , F. Barho , L. Cerutti , E. Tournié , T. Taliercio

13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2016, Beijing, China

Communication dans un congrès hal-01903751v1

GaSb grown by molecular beam epitaxy on silicon substrates

J.-B. Rodriguez , L. Cerutti , G. Patriarche , L. Largeau , K. Madiomanana et al.

19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France

Communication dans un congrès hal-01903638v1

On the origin of threading dislocations during III-Sb epitaxy on Si(001)

M. Niehle , J.-B. Rodriguez , L. Cerutti , K. Madiomanana , E. Tournié et al.

19th International Conference on Molecular-Beam Epitaxy (MBE2016), 2016, Montpellier, France

Communication dans un congrès hal-01903706v1

GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range

A. Castellano , L. Cerutti , G. Narcy , J.-B. Rodriguez , A. Garreau et al.

43rd Int. Symp. on Compound Semiconductors (ISCS 2016), 2016, Toyama, Japan

Communication dans un congrès hal-01903723v1

New Index-Coupled Distributed-Feedback Gasb-Based Lasers Diodes In The 2 to 3 µm Wavelength Range. Applications To Spectroscopy

A. Vicet , Q. Gaimard , Alexandre Larrue , L. Cerutti , T. Nguyenba et al.

3rd International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing (MIRSENS 3), Mar 2015, Würzburg, Germany

Communication dans un congrès hal-01795440v1

Observation of Fano resonances in highly doped semiconductor plasmonic resonators

T. Taliercio , Vilianne N’tsame , L. Cerutti , J.-B. Rodriguez , Franziska Barho et al.

SPIE NanoScience + Engineering, 2015, San Diego, United States

Communication dans un congrès hal-01903562v1

Brewster “mode” or how to optically monitor the doping concentration in highly doped semiconductor layers

T. Taliercio , L. Cerutti , E. Tournié , J. J. J Greffet , Franziska Barho et al.

META15 Conference, 2015, New York, United States

Communication dans un congrès hal-01903564v1

GaInSb/AlInSb coupled QWs on GaSb for telecom laser

L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez , F. Lelarge et al.

SPIE Photonics West, Opto-2015, Novel In-Plane Semiconductor Lasers XIV, 2015, San Francisco, United States

Communication dans un congrès hal-01903574v1

Highly doped semiconductor plasmonics for mid-IR applications

T. Taliercio , V. N’tsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié

7th International Conference on Surface Plasmon Photonics, 2015, Jérusalem, Israel

Communication dans un congrès hal-01903569v1

GaSb-based MIR semiconductor materials and lasers

E. Tournié

IEEE 2015 Summer Topicals Meeting Series, 2015, Nassau, Bahamas

Communication dans un congrès hal-01903509v1
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Terahertz studies of 2D and 3D topological transitions

M. Marcinkiewicz , Frederic Teppe , Christophe Consejo , Nina Diakonova , Wilfried Desrat et al.

19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩

Communication dans un congrès hal-01249953v2

1.55 µm GaSb-based lasers monolithically grown on Si substrates

E. Tournié , L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez

18th Conference on Molecular Beam epitaxy (MBE2014), 2014, Flagstaff, United States

Communication dans un congrès hal-01903137v1

GaSb-based active zones for laser emission at 1.55µm

A. Castellano , L. Cerutti , J.-B. Rodriguez , K. Madiomanana , F. Lelarge et al.

International Symposium on Compound Semiconductors (ISCS), 2014, Montpellier, France

Communication dans un congrès hal-01903487v1

Mid-IR heterogeneous silicon photonics

G. Roelkens , U. Dave , A. Gassenq , N. Hattasan , C. Hu et al.

SPIE Photonics West 2014, 2014, San Francisco, United States

Communication dans un congrès hal-01903127v1

Épitaxie par jets moléculaires de semi-conducteurs à base d’antimoine sur substrat Si pour la photonique

J.-B. Rodriguez , K. Madiomanana , A. Castellano , E. Tournié

GDR PULSE, Toulouse, 2014, Toulouse, France

Communication dans un congrès hal-01903148v1

Intégration épitaxiale de lasers à base de GaSb sur substrat Si pour émission du proche au moyen IR

E. Tournié , L. Cerutti , A. Castellano , K. Madiomanana , J.-B. Rodriguez

GDR Ondes, 2014, Orsay, France

Communication dans un congrès hal-01903151v1

GaSb-based grating regrowth for mid-infrared optoelectronic devices

L. Cerutti , J.-B. Rodriguez , Q. Gaimard , V. N’tsame-Guilengui , T. Taliercio et al.

18th IC-MBE, 2014, Flagstaff, United States

Communication dans un congrès hal-01805131v1

Antimonides, a key-enabling-technology for integrated infrared photonics

E. Tournié , L. Cerutti , K. Madiomanana , J.-R. Reboul , J.-B. Rodriguez

Chinese-German Workshop on “Nano-X Fundmental instruments and research on Novel Nanodevices” 4, 2013, Suzhou, China

Communication dans un congrès hal-01864297v1

Antimonide-based compound semiconductors and devices grown by molecular beam epitaxy

E. Tournié , L. Cerutti , G. Boissier , Y. Rouillard , A. N. Baranov et al.

17th Euro-Molecular Beam Epitaxy (Euro-MBE), 2013, Levi, Finland

Communication dans un congrès hal-01797215v1

Localized Surface Plasmons Resonances on GaSb-based materials for Infrared applications

V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié , T. Taliercio

Photonics Plamsonics Magneto-optics 2013, IMAGINENANO, 2013, Bilbao, Spain

Communication dans un congrès hal-01875563v1

GaSb-based all-semiconductor mid-IR plasmonics

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié

Photonics West (SPIE), 2013, San Francisco, United States

Communication dans un congrès hal-01864230v1

Integrated Thin-Film GaSb-based Fabry-Perot Lasers: Towards a Fully Integrated Spectrometer on a SOI Waveguide Circuit

N. Hattasan , A. Gassenq , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié et al.

SPIE: Quantum Sensing and Nanophotonic Devices, 2013, San Francisco, United States. ⟨10.1117/12.2000707⟩

Communication dans un congrès hal-01798001v1

Nano-optoelectronics applications of antimonide-based compounds

E. Tournié

International Nano-Optoelectronics Workshop (iNOW’2013), 2013, Cargèse, France

Communication dans un congrès hal-01864291v1

All-semiconductor plasmonics for mid-IR applications

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié

Optics + Photonics (SPIE), 2013, San Diego, United States

Communication dans un congrès hal-01864287v1

GaSb-based nanostrutures and their applications

E. Tournié

SemiconNano 2013, 2013, Lake Arrowhead, United States

Communication dans un congrès hal-01864294v1

Metal-free plasmonics for infrared applications

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié

7th Russian-French workshop on Nanosciences and Nanotechnologies, 2013, Novosibirsk, Russia

Communication dans un congrès hal-01864257v1

GaSb VCSELs with cascaded active-region for improved output power

D. Sanchez , L. Cerutti , E. Tournié

40th Int. Symp. on Compound Semiconductors 2013 (ISCS2013), 2013, Kobe, Japan

Communication dans un congrès hal-01874650v1

Lasers antimoniures et applications à la spectroscopie des gaz

A. Vicet , Y. Rouillard , L. Cerutti , R. Teissier , A. N. Baranov et al.

JNMO, 2013, Evian, France

Communication dans un congrès hal-01796970v1

Sb-based compound lasers on silicon substrates

Jean-Baptiste Rodriguez , L. Cerutti , K. Madiomanana , J. R. Reboul , Y. Rouillard et al.

Silicon & Photonics, 2013, Rennes, France

Communication dans un congrès hal-01796958v1

GaAs/GaSb(001) nanostructures at the atomic scale

A. Lenz , J. Schuppang , A. Gassenq , T. Taliercio , E. Tournié et al.

SPIE Photonics West, Opto-2013, 2013, San Francisco, United States

Communication dans un congrès hal-01870872v1

New confinement method for monolithic GaSb-VCSEL emitting in the mid-IR

D. Sanchez , L. Cerutti , E. Tournié

SPIE Photonics Europe 2012, 2012, Bruxelles, Belgium

Communication dans un congrès hal-01861060v1

Impact of nucleation conditions on the properties of GaSb-based heterostructures grown by MBE on GaAs substrates

K. Madiomanana , J.-B. Rodriguez , L. Cerutti , E. Tournié

17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan

Communication dans un congrès hal-01862182v1

High temperature, single mode, continuous wave operation of electrically pumped monolithic GaSb VCSELs

D. Sanchez , L. Cerutti , E. Tournié

29th International Symposium on Compound Semiconductors 2012 (ISCS), 2012, Santa Barbara, United States

Communication dans un congrès hal-01862986v1

InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications

N. Hattasan , A. Gassenq , L. Cerutti , J.-B. Rodriguez , E. Tournié et al.

2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland

Communication dans un congrès hal-01861067v1

CW operation at RT of Sb-based laser monolithically grown on Si substrate

J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié

SPIE “Quantum Sensing and Nanophotonic Devices IX", 2012, San Francisco, United States

Communication dans un congrès hal-01861107v1

Highly doped semiconductors for mid-infrared plasmonics

V. Ntsame Guilengui , T. Taliercio , L. Cerutti , J.-B. Rodriguez , E. Tournié

36th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012), 2012, Porquerolles, France

Communication dans un congrès hal-01862980v1

Pseudo-volume-plasmon into arrays of doped and un-doped semiconductors

T. Taliercio , V. N’tsame Guilengui , E. Tournié

3rd International conference on meta-materials, photonic crystals and plasmonics, META12, 2012, Paris, France

Communication dans un congrès hal-01861379v1

Mid-IR laser diodes epitaxially grown by Molecular Beam epitaxy on silicon substrates

J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié

11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States

Communication dans un congrès hal-01861063v1

Single-mode operation of monolithic GaSb- VCSELs

E. Tournié , D. Sanchez , L. Cerutti

2nd International workshop on opportunities and challenge in mid-infrared laser-based gas sensing (MIRSENS 2), 2012, Wroclaw, Poland

Communication dans un congrès hal-01861102v1

High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched Tunnel-junction apertures

D. Sanchez , L. Cerutti , E. Tournié

IEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States

Communication dans un congrès hal-01862214v1

Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applications

E. Ryckeboer , A. Gassenq , N. Hattasan , B. Kuyken , L. Cerutti et al.

IEEE Conference on Laser and Electro-Optics (CLEO) 2012, 2012, San Jose, United States

Communication dans un congrès hal-01862205v1

Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C

L. Cerutti , D. Sanchez , E. Tournié

17th Conference on Molecular Beam epitaxy (MBE2012), 2012, Nara, Japan

Communication dans un congrès hal-01862987v1

Surface and localized plasmons polaritons on arrays of doped and un-doped semiconductors

T. Taliercio , V. Ntsame Guilengui , L. Cerutti , J.-B. Rodriguez , E. Tournié

11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States

Communication dans un congrès hal-01861443v1

Single mode, CW GaSb-VCSEL operating at 70°C

D. Sanchez , L. Cerutti , E. Tournié

11th Infrared Optoelectronics: Materials and devices (MIOMD-XI), 2012, Chicago, United States

Communication dans un congrès hal-01861440v1

Sb-based laser grown on Si substrate operating under cw above room temperature

Laurent Cerutti , Jean-Baptiste Rodriguez , J. R. Reboul , Eric Tournié

38th Int. Symp. on Compound Semiconductors 2011, (ISCS2011), 2011, Berlin, Germany

Communication dans un congrès hal-01858339v1

Current developments in MBE growth of highly mismatched materials

J.-B. Rodriguez , L. Cerutti , J. R. Reboul , E. Tournié

European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d’Huez, France

Communication dans un congrès hal-01831686v1

Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

N. Hattasan , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié , Dries van Thourhout et al.

Conference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. pp.79451K, ⟨10.1117/12.874659⟩

Communication dans un congrès hal-00641358v1

The InAs/GaSb/InSb short-period superlattice: an active zone for mid-IR lasers

E. Tournié , A. Gassenq , L. Cerutti

SPIE Photonics West, Opto-2011, “Quantum Sensing and Nanophotonic Devices VIII”, 2011, San Francisco, United States

Communication dans un congrès hal-01831665v1

Metamorphic 6.3 Å GaInSb templates grown on GaAs substrates for mid-IR lasers

Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié

European Workshop on Molecular-Beam Epitaxy (Euro-MBE 2011), 2011, Alpe d'Huez, France

Communication dans un congrès hal-01858325v1

Lasers moyen-infrarouge à base d’antimoine réalisés sur substrat Silicium

J.-B. Rodriguez , J. R. Reboul , L. Cerutti , E. Tournié

13ème Journées Nano, Micro et Optoélectronique (JNMO 2010), 2010, Les Issambres, France

Communication dans un congrès hal-01831640v1

Sb-based laser sources grown by molecular beam epitaxy on silicon substrates

J.-B. Rodriguez , L. Cerutti , P. Grech , G. Boissier , G. Narcy et al.

Photonics West 2010, Novel In-Plane Semiconductor Lasers IX, 2010, San Francisco, United States

Communication dans un congrès hal-01830461v1

Highly Tensile-Strained Ga0.5In0.5As/GaSb Heterostructures

T. Taliercio , A. Gassenq , E. Luna , A. Trampert , E. Tournié

37th International Symposium on Compound Semiconductors (ISCS2010), 2010, Takamatsu, Japan

Communication dans un congrès hal-01830920v1

MBE growth of highly tensile strained Ga(In)As/GaSb quantum wells

A. Gassenq , E. Luna , T. Taliercio , A. Trampert , E. Tournié

16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany

Communication dans un congrès hal-01830962v1

A Faraday Optical Isolator in the 9-10 µm range for Quantum Cascade Laser applications

L. Hilico , E. Tournié , A. Besse , A. Orgongozo

Physique Atomique, Moléculaire et Optique, 2010, Ors, France

Communication dans un congrès hal-01830468v1

Growth optimization of InAs/GaSb/InSb short-period super-lattices as active regions of mid-IR lasers

A. Gassenq , L. Cerutti , E. Tournié

16th Int. Conf. on Molecular-Beam Epitaxy (MBE16), 2010, Berlin, Germany

Communication dans un congrès hal-01830958v1

Tensile-Strained Ga1-xInxAs / GaSb Heterostructures for Mid-IR Applications

T. Taliercio , E. Luna , A. Gassenq , A. Trampert , E. Tournié

10th Mid-Infrared Optcal Materials and Devices International Conference (MIOMD-10), 2010, Shanghai, China

Communication dans un congrès hal-01831106v1

Effect of asymmetric interface profile on the electronic properties of InAs/GaSb/InSb short-period superlattice structures

S. Ben Rejeb , M. Debbichi , M. Saîd , A. Gassenq , E. Tournié et al.

International Conference on Nano-Materials and Renewable Energie, 2010, Safi, Morocco

Communication dans un congrès hal-01830997v1

GaSb based,1.55 µm laser monolithically integrated on Silicon substrates operating at room temperature

L. Cerutti , J.-B. Rodriguez , E. Tournié

22nd Int. Conf. on InP and Related Materials (IPRM 2010), 2010, Takamatsu, Japan

Communication dans un congrès hal-01830913v1

Interfaces as design tools for InAs/Gasb/InSb short-period superlattice for mid-infrared emission

S. Ben Rejeb , M. Debbichi , M. Said , A. Gassenq , E. Tournié et al.

Conference MADICA 2010, 2010, Tabarka, Tunisia

Communication dans un congrès hal-01830937v1

Sb-based lasers grown on highly mismatched substrates

Laurent Cerutti , Jean-Rémy Reboul , Jean-Baptiste Rodriguez , Eric Tournié

Mid-Infrared Optoelectronics: Materials and Devices (MIOMD X), 2010, Shanghai, China

Communication dans un congrès hal-01831036v1

Heterogeneous Integration of GaSb-based epitaxy on silicon-on-insulator: towards mid-infrared photonic integrated circuits for environmental and bio-medical applications

N. Hattasan , L. Cerutti , J.-B. Rodriguez , E. Tournié , D. Van Thourhout et al.

10th MIOMD Conference, 2010, Shanghai, China

Communication dans un congrès hal-01831108v1

GaSb based, 1.55 µm laser monolithically integrated on Silicon substrate operating at room temperature

L. Cerutti , J.-B. Rodriguez , Eric Tournié

IEEE Indium Phosphide and Related Materials (IPRM) 2010, 2010, Kagawa, Japan

Communication dans un congrès hal-01828237v1

Room Temperature, Continuous Wave Operation of an Sb-Based Laser Grown on GaAs Substrate

L. Cerutti , J.-B. Rodriguez , P. Grech , Eric Tournié

Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States

Communication dans un congrès hal-01828223v1

Nanostructure Devices for Optoelectronics

E. Tournié

E-nano2009, 2009, Choroni, Venezuela

Communication dans un congrès hal-01826612v1

Mid-IR Sb-based emitters and detectors

E. Tournié

WOCSDICE 2009, 2009, Malaga, Spain

Communication dans un congrès hal-01826607v1

Mid-IR GaSb-based lasers on highly mismatched GaAs and Si substrates

Jean-Baptiste Rodriguez , L. Cerutti , E. Tournié

Workshop on Compound Semiconductor Devices and integrated Circuits (WOCSDICE 2009), 2009, Malaga, Spain

Communication dans un congrès hal-01827647v1

Mid-IR Sb-based lasers grown on highly mismatched GaAs and Si substrates

J.-B. Rodriguez , L. Cerutti , E. Tournié

36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States

Communication dans un congrès hal-01828229v1

Structural properties and strain relaxation mechanisms of MBE grown InSb quantum dots on GaSb substrates

B. Satpati , V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié et al.

2nd Int. Conference on Physics at Surfaces and Interfaces (PSI2009), 2009, Puri, India

Communication dans un congrès hal-01827627v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

L. Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier et al.

15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada

Communication dans un congrès hal-01826633v1

Interface stability of metastable quaternary (Ga,In)(As,Sb) quantum wells

E. Luna , Y. Rouillard , L. Cerutti , E. Tournié , A. Trampert

36th Int. Symp. on Compound Semiconductors 2009, (ISCS2009), 2009, Santa Barbara, United States

Communication dans un congrès hal-01798417v1

GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm

Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié

CLEO Europe - EQEC 2009, Jun 2009, Munich, Germany. pp.1-1, ⟨10.1109/CLEOE-EQEC.2009.5192675⟩

Communication dans un congrès hal-00429890v1

Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate

J.-B. Rodriguez , L. Cerutti , E. Tournié

Conference on Lasers and Electro-Optics (CLEO 2009), 2009, Baltimore, United States

Communication dans un congrès hal-01828217v1

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular-beam-epitaxy

E. Luna , B. Satpati , B.H. Hong , S. I. Rybchenko , Jean-Baptiste Rodriguez et al.

15th European Workshop on Molecular-Beam Epitaxy (Euro-MBE 15), 2009, Zakopane, Poland

Communication dans un congrès hal-01827641v1

EFM/AFM studies of laser diodes for 2.6 – 3.5 µm range with InSb/InAs/GaSb superlattice in active area: design and principal properties

A. N. Titkov , A. V. Ankudinov , M. S. Dunaevskii , K. S. Ladutenko , V. P. Evtikvhiev et al.

XII International Symposium on Nanophysics and Nanoelectronics, 2008, Nizhny Novgorod, Russia

Communication dans un congrès hal-01826457v1

Conduction-band G-L crossover in III-V GaSb SAQDs induced by lattice mismatch strain

S. Rybchenko , R. Gupta , K. Lai , I. Itskevich , S Haywood et al.

One-Day Quantum Dot meeting, Imperial College, London, U.K., 11 January 2008, 2008, London, United Kingdom

Communication dans un congrès hal-01785078v1

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

E. Luna , F. Ishikawa , B. Satpati , Jean-Baptiste Rodriguez , E. Tournié et al.

International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada

Communication dans un congrès hal-01825828v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

Laurent Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier et al.

International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada

Communication dans un congrès hal-01785734v1

Epitaxie par jets moléculaires de boîtes quantiques InSb

N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati , E. Luna et al.

12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France

Communication dans un congrès hal-01826576v1

MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

A. Gassenq , L. Cerutti , Alexei Baranov , E. Tournié

International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada

Communication dans un congrès hal-01825818v1

InAs/GaSb/InSb short-period superlattice diode lasers emitting near 3.3 µm at room temperature

A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié

MIOMD IX, 2008, Freiburg, Germany

Communication dans un congrès hal-01826454v1

Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applications

F. Genty , L. Cerutti , A. Ducanchez , P. Grech , Eric Tournié

MIOMD IX, 2008, Freiburg, Germany

Communication dans un congrès hal-01785770v1

Nouveau laser moyen infra-rouge à super-réseaux InAs/GaSb pour une émission entre 3 et 4 µm

A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié

12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France

Communication dans un congrès hal-01826580v1

Strain relaxation mechanism in the MBE grown InSb/GaSb material system

B. Satpati , E. Luna , A. Trampert , N. Deguffroy , V. Tasco et al.

International Symposium on Compound Semiconductors 2008 (ISCS2008), 2008, Rust, Germany

Communication dans un congrès hal-01826523v1

720 mW continuous wave room temperature operation diode laser emitting at around 2.4μm

Yves Rouillard , Eric Tournié , Michel Krakowski

Technologies for optical countermeasures II (SPIE), 2005, Bruges, Belgium

Communication dans un congrès hal-01798520v1

Carrier recombination processes in GaAsN: from the dilute limit to alloying

Romuald Intartaglia , Thierry Taliercio , Pierre Lefebvre , Thierry Bretagnon , Thierry Guillet et al.

E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩

Communication dans un congrès hal-01310044v1

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

Romuald Intartaglia , Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Pierre Valvin et al.

5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩

Communication dans un congrès istex hal-01312489v1

Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN

Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Marie-Amandine Pinault , Eric Tournié

International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩

Communication dans un congrès istex hal-01319577v1
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In-situ observations of misfit dislocation motion in AlSb/GaSb dislocation filter layer structures

Karl Graser , Audrey Gilbert , Jean-Baptiste Rodriguez , Eric Tournié , Achim Trampert

Acta Materialia, 2026, 326, pp.121946. ⟨10.1016/j.actamat.2026.121946⟩

Article dans une revue hal-05470979v1
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Quantum spin Hall effect in III-V semiconductors at elevated temperatures: Advancing topological electronics

Manuel Meyer , Jonas Baumbach , Sergey Krishtopenko , Adriana Wolf , Monika Emmerling et al.

Science Advances , 2025, 11 (43), ⟨10.1126/sciadv.adz2408⟩

Article dans une revue hal-05364817v1

Material parameter models and simulations of III-Sb solar cells based on AlGaAsSb, AlInAsSb and GaInAsSb quaternary alloys

Stéphanie Parola , Lucas Gavotto , Julie Tournet , Alexandre Vauthelin , Frédéric Martinez et al.

Solar Energy Materials and Solar Cells, 2025, 288, pp.113613. ⟨10.1016/j.solmat.2025.113613⟩

Article dans une revue hal-05054210v1
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High-performance GaSb-based interband cascade lasers emitting at 4.7 µm grown on GaAs and Si substrates

Maeva Fagot , Daniel A Díaz-Thomas , Audrey Gilbert , Michel Ramonda , Yves Rouillard et al.

Optical Materials Express, 2025, 15 (11), pp.2654. ⟨10.1364/ome.568659⟩

Article dans une revue hal-05454354v1
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MBE growth and properties of GaInAsSb alloys deep inside the miscibility gap

T. Sabardeil , G. Gregoire , J.-L. Reverchon , V. Trinite , Eric Tournié et al.

Journal of Crystal Growth, 2025, 657, pp.128107. ⟨10.1016/j.jcrysgro.2025.128107⟩

Article dans une revue hal-05454793v1
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Strain relief and threading dislocation reduction in GaSb/AlSb/GaSb heterostructures grown on Si(001) substrate

K. Graser , A. Gilbert , J.-B. Rodriguez , Eric Tournié , A. Trampert

Journal of Applied Physics, 2025, 137 (20), ⟨10.1063/5.0268051⟩

Article dans une revue hal-05457296v1
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MBE growth of GaSb on Ge-based templates grown on Si for mid-infrared photonics [Invited]

Milan Silvestre , Sébastien Lacaze , Audrey Gilbert , S Calcaterra , A de Cerdeira Oliveira et al.

Optical Materials Express, 2025, 15 (10), pp.2499. ⟨10.1364/ome.569432⟩

Article dans une revue hal-05283375v1
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Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing

Daniel Andrés Díaz-Thomas , Diba Ayache , Maëva Fagot , Zeineb Loghmari , Audrey Gilbert et al.

Applied Physics Letters, 2025, 126 (3), pp.031102. ⟨10.1063/5.0242398⟩

Article dans une revue hal-04912746v1
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Multiprobe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence

Salah Benlemqwanssa , Sergey Krishtopenko , Manuel Meyer , Laurent Bonnet , Adriana Wolf et al.

Physical Review Applied, 2024, 22 (6), pp.064059. ⟨10.1103/PhysRevApplied.22.064059⟩

Article dans une revue hal-04881971v1
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Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Maeva Fagot , Daniel Andrés Díaz-Thomas , Audrey Gilbert , Gad Kombila , Michel Ramonda et al.

Optics Express, 2024, 32 (7), pp.11057. ⟨10.1364/OE.514069⟩

Article dans une revue hal-04739941v1
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Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy

Audrey Gilbert , M. Ramonda , G. Patriarche , E. Tournié , J.‐b. Rodriguez

Advanced Physics Research, In press, ⟨10.1002/apxr.202400090⟩

Article dans une revue hal-04678079v1
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Improved light transmission for III-V lasers monolithically integrated on Si platforms

Michele Paparella , Andres Remis , Marco Grande , Thierry Taliercio , Laurent Cerutti et al.

Optics Express, 2024, 32 (22), pp.38994. ⟨10.1364/oe.537703⟩

Article dans une revue hal-04739667v1
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Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy

A. Gilbert , K. Graser , Michel Ramonda , A. Trampert , J.‐b. Rodriguez et al.

Advanced Physics Research, 2024, 4 (4), pp.2400126. ⟨10.1002/apxr.202400126⟩

Article dans une revue hal-05087118v1
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Intensity noise and modulation dynamics of an epitaxial mid-infrared interband cascade laser on silicon

H. Kim , P. Didier , S. Zaminga , D. Díaz-Thomas , A. Baranov et al.

APL Photonics, 2024, 9 (10), pp.106103-1:106103-9. ⟨10.1063/5.0214252⟩

Article dans une revue hal-04820405v1
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Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Andres Remis , Laura Monge-Bartolome , Michele Paparella , Audrey Gilbert , Guilhem Boissier et al.

Light: Science and Applications, 2023, 12, pp.150. ⟨10.1038/s41377-023-01185-4⟩

Article dans une revue hal-04136332v1
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Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

Stefano Soresi , Mattia da Lisca , Claire Besancon , Nicolas Vaissiere , Alexandre Larrue et al.

EPJ Photovoltaics, 2023, WCPEC-8: State of the Art and Developments in Photovoltaics, 14, pp.1. ⟨10.1051/epjpv/2022027⟩

Article dans une revue hal-03931835v1
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Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying

Audrey Gilbert , Michel Ramonda , Laurent Cerutti , Charles Cornet , Gilles Patriarche et al.

Advanced Optical Materials, 2023, 11 (15), ⟨10.1002/adom.202203050⟩

Article dans une revue (article de synthèse) hal-04107444v1
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Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms

Michele Paparella , Laura Monge Bartolome , Jean-Baptiste Rodriguez , Laurent Cerutti , Marco Grande et al.

IEEE Photonics Journal, 2022, 14, pp.6651206. ⟨10.1109/jphot.2022.3203593⟩

Article dans une revue hal-03779758v1
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Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

Colin Avogadri , Sébastian Gebert , Sergey Krishtopenko , Ivanovitch Castillo Arvelo , Christophe Consejo et al.

Physical Review Research, 2022, 4 (4), pp.L042042. ⟨10.1103/physrevresearch.4.l042042⟩

Article dans une revue hal-03939599v2
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Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Eric Tournié , Laura Monge Bartolome , Marta Rio Calvo , Zeineb Loghmari , Daniel Díaz-Thomas et al.

Light: Science and Applications, 2022, 11, ⟨10.1038/s41377-022-00850-4⟩

Article dans une revue hal-03684843v1
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Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon

Marta Rio Calvo , Jean-Baptiste Rodriguez , Charles Cornet , Laurent Cerutti , Michel Ramonda et al.

Advanced Electronic Materials, 2022, 8 (1), pp.2100777. ⟨10.1002/aelm.202100777⟩

Article dans une revue hal-03404002v1
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Quantum cascade lasers monolithically integrated on germanium

K. Kinjalk , A. Gilbert , A. Remis , Z. Loghmari , L. Cerutti et al.

Optics Express, 2022, 30 (25), pp.45259. ⟨10.1364/OE.472473⟩

Article dans une revue hal-04260106v1

Characterization and Simulation of AlGaAsSb/GaSb Tandem Solar Cell

Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard et al.

IEEE Journal of Photovoltaics, 2022, pp.1-8. ⟨10.1109/JPHOTOV.2022.3164690⟩

Article dans une revue hal-03695407v1
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GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

Laura Monge-Bartolome , Bei Shi , Billy Lai , Guilhem Boissier , Laurent Cerutti et al.

Optics Express, 2021, 29 (7), pp.11268-11276. ⟨10.1364/oe.419396⟩

Article dans une revue hal-03184763v1
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Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

J. Kret , J. Tournet , S. Parola , F. Martinez , D. Chemisana et al.

Solar Energy Materials and Solar Cells, 2021, 219, pp.110795. ⟨10.1016/j.solmat.2020.110795⟩

Article dans une revue hal-02951928v1
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Quantum well interband semiconductor lasers highly tolerant to dislocations

Laurent Cerutti , Daniel A Díaz Thomas , Jean-Baptiste Rodriguez , Marta Rio Calvo , Gilles Patriarche et al.

Optica, 2021, 8 (11), pp.1397-1402. ⟨10.1364/optica.438272⟩

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IEEE Journal of Photovoltaics, 2021, pp.1-8. ⟨10.1109/JPHOTOV.2021.3075290⟩

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Impact of the ridge etching‐depth on GaSb‐based laser diodes

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Electronics Letters, 2021, ⟨10.1049/ell2.12392⟩

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Thermal performance of GaInSb quantum well lasers for silicon photonics applications

C. R. Fitch , G. W. Read , I. P. Marko , D. A. Duffy , L Cerutti et al.

Applied Physics Letters, 2021, 118 (10), pp.101105. ⟨10.1063/5.0042667⟩

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Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Efficiency above 14%

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Nano Letters, 2021, 21 (11), pp.4524-4529. ⟨10.1021/acs.nanolett.0c04847⟩

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Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Laura Monge-Bartolomé , Tiphaine Cerba , Daniel A Díaz-Thomas , Michaël Bahriz , Marta Calvo et al.

Optics Express, 2020, 28 (14), pp.20785. ⟨10.1364/OE.397164⟩

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Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

M. Rio Calvo , Laura Monge-Bartolomé , M. Bahriz , Guilhem Boissier , Laurent Cerutti et al.

Optica, 2020, 7 (4), pp.263. ⟨10.1364/OPTICA.388383⟩

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3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

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InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

Z. Loghmari , J.-B. Rodriguez , A. Baranov , M. Rio-Calvo , L. Cerutti et al.

APL Photonics, 2020, 5 (4), pp.041302. ⟨10.1063/5.0002376⟩

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Zinc-blende group III-V/group IV epitaxy: Importance of the miscut

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Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Mohammed Zeghouane , Geoffrey Avit , Yamina Andre , Thierry Taliercio , Pierre Ferret et al.

Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩

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Selective growth of ordered hexagonal InN nanorods

Mohammed Zeghouane , Geoffrey Avit , Thomas W. Cornelius , Damien Salomon , Yamina Andre et al.

CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩

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Optical properties and dynamics of excitons in Ga(Sb,Bi)/GaSb quantum wells: evidence for a regular alloy behavior

Ernest Rogowicz , Wojciech Linhart , Marcin Grzegorz Syperek , Jan Kopaczek , Olivier Delorme et al.

Semiconductor Science and Technology, inPress, 35 (2), pp.025024. ⟨10.1088/1361-6641/ab6017⟩

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Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

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Optics Express, 2019, 27 (4), pp.A11. ⟨10.1364/OE.27.000A11⟩

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Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm

D. A Díaz-Thomas , Oleksandr Stepanenko , Michaël Bahriz , Stéphane Calvez , E. Tournié et al.

Optics Express, 2019, 27 (22), pp.31425. ⟨10.1364/OE.27.031425⟩

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The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates

Michael Niehle , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié , Achim Trampert

physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2019, 13 (10), pp.1900290. ⟨10.1002/pssr.201900290⟩

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Molecular-beam epitaxy of GaInSbBi alloys

O. Delorme , L. Cerutti , E. Luna , A. Trampert , E. Tournié et al.

Journal of Applied Physics, 2019, Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (15), pp.155304. ⟨10.1063/1.5096226⟩

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Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer

M. Rio Calvo , J-B Rodriguez , L. Cerutti , M. Ramonda , G. Patriarche et al.

Journal of Crystal Growth, 2019, pp.125299. ⟨10.1016/j.jcrysgro.2019.125299⟩

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Type I GaSb 1-x Bi x /GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

R. Kudrawiec , J. Kopaczek , O. Delorme , M. Polak , M. Gladysiewicz et al.

Journal of Applied Physics, 2019, 125 (20), pp.205706. ⟨10.1063/1.5094159⟩

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Indium antimonide photovoltaic cells for near-field thermophotovoltaics

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Solar Energy Materials and Solar Cells, 2019, 203, pp.110190. ⟨10.1016/j.solmat.2019.110190⟩

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Massless Dirac fermions in III-V semiconductor quantum wells

Sergey S. Krishtopenko , W. Desrat , K. Spirin , C. Consejo , S. Ruffenach et al.

Physical Review B, 2019, 99 (12), pp.121405. ⟨10.1103/PhysRevB.99.121405⟩

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Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

Stéphanie Parola , Alexandre Vauthelin , Julie Tournet , Joanna Kret , Joanna El Husseini et al.

Solar Energy Materials and Solar Cells, 2019, 200, pp.110042. ⟨10.1016/j.solmat.2019.110042⟩

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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

T. Cerba , P. Hauchecorne , M. Martin , J. Moeyaert , R. Alcotte et al.

Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩

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Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well

Sergey S. Krishtopenko , Sandra Ruffenach , Fernando Gonzalez-Posada , Christophe Consejo , Wilfried Desrat et al.

JETP Letters, 2019, 109 (2), pp.96-101. ⟨10.1134/S0021364019020085⟩

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GaSb-based solar cells for multi-junction integration on Si substrates

J. Tournet , S. Parola , A. Vauthelin , D. Montesdeoca Cardenes , S. Soresi et al.

Solar Energy Materials and Solar Cells, 2019, 191, pp.444-450. ⟨10.1016/j.solmat.2018.11.035⟩

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Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

Sergey S. Krishtopenko , Sandra Ruffenach , F. Gonzalez-Posada , G. Boissier , M. Marcinkiewicz et al.

Physical Review B, 2018, 97 (24), pp.245419. ⟨10.1103/PhysRevB.97.245419⟩

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In situ determination of the growth conditions of GaSbBi alloys

O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez

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Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

Franziska B. Barho , Fernando Gonzalez-Posada , Maria-Jose Milla , Mario Bomers , Laurent Cerutti et al.

Journal of Nanophotonics, 2018, 7 (2), pp.507-516. ⟨10.1515/nanoph-2017-0052⟩

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Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Mario Bomers , Davide Maria Di Paola , Laurent Cerutti , Thierry Michel , Richard Arinero et al.

Semiconductor Science and Technology, 2018, 33 (9), pp.095009. ⟨10.1088/1361-6641/aad4bf⟩

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Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Mario Bomers , Franziska Barho , Maria Jose Milla-Rodrigo , Laurent Cerutti , Richard Arinero et al.

Journal of Physics D: Applied Physics, 2018, 51 (1), pp.015104. ⟨10.1088/1361-6463/aa98af⟩

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On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

Michael Niehle , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié , Achim Trampert

Acta Materialia, 2018, 143, pp.121 - 129. ⟨10.1016/j.actamat.2017.09.055⟩

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Universal description of III-V/Si epitaxial growth processes

Ida Lucci , Simon Charbonnier , L. Pedesseau , Maxime Vallet , Laurent Cerutti et al.

Physical Review Materials, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩

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Quantum cascade lasers grown on silicon

Hoang Nguyen-Van , Alexei Baranov , Zeineb Loghmari , Laurent Cerutti , Jean-Baptiste Rodriguez et al.

Scientific Reports, 2018, 8 (1), ⟨10.1038/s41598-018-24723-2⟩

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Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

E. Luna , O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez et al.

Applied Physics Letters, 2018, 112 (15), ⟨10.1063/1.5024199⟩

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Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness

E. Luna , O. Delorme , L. Cerutti , E. Tournié , J-B Rodriguez et al.

Semiconductor Science and Technology, 2018, 33 (9), pp.094006. ⟨10.1088/1361-6641/aad5c4⟩

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A Stress-Free and Textured GaP Template on Silicon for Solar Water Splitting

Ida Lucci , Simon Charbonnier , Maxime Vallet , Pascal Turban , Yoan Léger et al.

Advanced Functional Materials, 2018, 28 (30), pp.1801585. ⟨10.1002/adfm.201801585⟩

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Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

T. Cerba , M. Martin , J. Moeyaert , S. David , J. Rouvière et al.

Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩

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Interface energy analysis of III–V islands on Si (001) in the Volmer-Weber growth mode

Anne Ponchet , G. Patriarche , J. B. Rodriguez , L. Cerutti , E. Tournié

Applied Physics Letters, 2018, 113 (19), pp.191601. ⟨10.1063/1.5055056⟩

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Phosphonate monolayers on InAsSb and GaSb surfaces for mid-IR plasmonics

Mario Bomers , Aude Mezy , Laurent Cerutti , Franziska Barho , Fernando Gonzalez-Posada et al.

Applied Surface Science, 2018, 451, pp.241-249. ⟨10.1016/j.apsusc.2018.04.208⟩

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Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

A. Castellano , L. Cerutti , J. B. Rodriguez , G. Narcy , A. Garreau et al.

APL Photonics, 2017, 2 (6), ⟨10.1063/1.4983389⟩

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Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié

Journal of Crystal Growth, 2017, 477, pp.144-148. ⟨10.1016/j.jcrysgro.2017.03.048⟩

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Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs "Three-Layer" Gapless Quantum Wells

Sandra Ruffenach , Sergey S. Krishtopenko , L. S. Bovkun , A. V. Ikonnikov , M. Marcinkiewicz et al.

JETP Letters, 2017, 106 (11), pp.727-732. ⟨10.1134/S0021364017230102⟩

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Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

Jean-Baptiste Rodriguez , Laurent Cerutti , G. Patriarche , L. Largeau , K. Madiomanana et al.

Journal of Crystal Growth, 2017, 477, pp.65-71. ⟨10.1016/j.jcrysgro.2017.04.003⟩

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Low-loss orientation-patterned GaSb waveguides for mid-infrared parametric conversion

S. Roux , L. Cerutti , E. Tournié , B. Gerard , G. Patriarche et al.

Optical Materials Express, 2017, 7 (8), ⟨10.1364/OME.7.003011⟩

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Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations

Michael Niehle , Achim Trampert , Jean-Baptiste Rodriguez , Laurent Cerutti , Eric Tournié

Scripta Materialia, 2017, 132, pp.5 - 8. ⟨10.1016/j.scriptamat.2017.01.018⟩

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Growth and characterization of AlInAsSb layers lattice-matched to GaSb

J. Tournet , Y. Rouillard , E. Tournié

Journal of Crystal Growth, 2017, ⟨10.1016/j.jcrysgro.2017.04.001⟩

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GaSbBi/GaSb quantum well laser diodes

O. Delorme , L. Cerutti , E. Luna , G. Narcy , A. Trampert et al.

Applied Physics Letters, 2017, 110 (22), ⟨10.1063/1.4984799⟩

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Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

M. Milla , F. Barho , F. Gonzalez-Posada , L. Cerutti , Benoit Charlot et al.

Optics Express, 2017, 25 (22), ⟨10.1364/OE.25.026651⟩

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Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

M. Milla , F Barho , F. Gonzalez-Posada , L. Cerutti , M. Bomers et al.

Nanotechnology, 2016, 27 (42), ⟨10.1088/0957-4484/27/42/425201⟩

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Metamorphic III–V semiconductor lasers grown on silicon

Eric Tournié , Laurent Cerutti , Jean-Baptiste Rodriguez , Huiyun Liu , Jiang Wu et al.

MRS Bulletin, 2016, 41 (03), pp.218 - 223. ⟨10.1557/mrs.2016.24⟩

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X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates

J.B. Rodriguez , K. Madiomanana , L. Cerutti , A. Castellano , E. Tournié

Journal of Crystal Growth, 2016, 439, pp.33 - 39. ⟨10.1016/j.jcrysgro.2016.01.005⟩

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III-V-on-silicon integrated micro - spectrometer for the 3 μm wavelength range

M. Muneeb , A. Vasiliev , A. Ruocco , A. Malik , H. Chen et al.

Optics Express, 2016, 24 (9), ⟨10.1364/OE.24.009465⟩

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GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55- μ m

Laurent Cerutti , A. Castellano , J.-B. Rodriguez , M. Bahri , L. Largeau et al.

Applied Physics Letters, 2015, 106 (10), pp.101102. ⟨10.1063/1.4914884⟩

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Silicon surface preparation for III-V molecular beam epitaxy

K. Madiomanana , M. Bahri , J.B. Rodriguez , L. Largeau , L. Cerutti et al.

Journal of Crystal Growth, 2015, 413, pp.17 - 24. ⟨10.1016/j.jcrysgro.2014.12.004⟩

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Mid-infrared characterization of refractive indices and propagation losses in GaSb/Al X Ga 1−X AsSb waveguides

S. Roux , P. Barritault , O. Lartigue , Laurent Cerutti , Eric Tournié et al.

Applied Physics Letters, 2015, 107 (17), pp.171901. ⟨10.1063/1.4934702⟩

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Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix

Thierry Taliercio , Vilianne Ntsame Guilengui , Laurent Cerutti , Jean-Baptiste Rodriguez , Franziska Barho et al.

Optics Express, 2015, 23 (23), ⟨10.1364/OE.23.029423⟩

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Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

Roel Roelkens , Utsav Dave , Alban Gassenq , Nannicha Hattasan , Chen Hu et al.

IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20 (4), pp.394 - 404. ⟨10.1109/JSTQE.2013.2294460⟩

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Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration

Thierry Taliercio , Vilianne Ntsame Guilengui , Laurent Cerutti , Eric Tournié , Jean-Jacques Greffet

Optics Express, 2014, 22 (20), pp.24294-24303. ⟨10.1364/OE.22.024294⟩

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Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well lasers

S. Gadedjisso-Tossou , S. Belahsene , M. A. Mohou , E. Tournié , Y. Rouillard

Semiconductor Science and Technology, 2013, 28 (1), ⟨10.1088/0268-1242/28/1/015015⟩

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Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

Roel Roelkens , Utsav Dave , Alban Gassenq , Nannicha Hattasan , Chen Chen et al.

Optical Materials Express, 2013, 3 (9), ⟨10.1364/OME.3.001523⟩

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Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

E. Ryckeboer , A. Gassenq , M. Muneeb , N. Hattasan , S. Pathak et al.

Optics Express, 2013, 21 (5), ⟨10.1364/OE.21.006101⟩

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Mid-IR GaSb-based monolithic vertical-cavity surface-emitting lasers

Dorian Sanchez , Laurent Cerutti , Eric Tournié

Journal of Physics D: Applied Physics, 2013, 46 (49), ⟨10.1088/0022-3727/46/49/495101⟩

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Effects of low temperature on the cold start gaseous emissions from light duty vehicles fuelled by ethanol-blended gasoline

M. Clairotte , T.W. Adam , A. Zardini , U. Manfredi , G. Martini et al.

Applied Energy, 2013, 102, pp.44 - 54. ⟨10.1016/j.apenergy.2012.08.010⟩

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Mid-IR GaSb-Based Bipolar Cascade VCSELs

Dorian Sanchez , Laurent Cerutti , Eric Tournié

IEEE Photonics Technology Letters, 2013, 25 (9), pp.882 - 884. ⟨10.1109/LPT.2013.2254707⟩

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Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures

A. Lenz , E. Tournié , J. Schuppang , M. Dähne , H. Eisele

Applied Physics Letters, 2013, 102 (10), ⟨10.1063/1.4795020⟩

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Single-Mode Monolithic GaSb Vertical-Cavity Surface-Emitting Laser

Dorian Sanchez , Laurent Cerutti , Eric Tournié

Optics Express, 2012, 20 (14), ⟨10.1364/OE.20.015540⟩

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Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics

D. Sanchez , L. Cerutti , E. Tournié

Semiconductor Science and Technology, 2012, 27 (8), ⟨10.1088/0268-1242/27/8/085011⟩

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Online characterization of regulated and unregulated gaseous and particulate exhaust emissions from two-stroke mopeds: A chemometric approach

Michael Clairotte , T.W. Adam , R. Chirico , B. Giechaskiel , U. Manfredi et al.

Analytica Chimica Acta, 2012, 717, pp.28-38. ⟨10.1016/j.aca.2011.12.029⟩

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III&#x2013;V/Silicon Photonics for Short-Wave Infrared Spectroscopy

Günther Roelkens , William M. J. Green , Bart Kuyken , Xiaoping Liu , Nannicha Hattasan et al.

IEEE Journal of Quantum Electronics, 2012, 48 (2), pp.292 - 298. ⟨10.1109/JQE.2011.2178090⟩

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Localized surface plasmon resonances in highly doped semiconductors nanostructures

V. N'Tsame Guilengui , L. Cerutti , Jean-Baptiste Rodriguez , E. Tournié , T. Taliercio

Applied Physics Letters, 2012, 101 (16), ⟨10.1063/1.4760281⟩

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Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

Alban Gassenq , Nannicha Hattasan , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié et al.

Optics Express, 2012, 20 (11), ⟨10.1364/OE.20.011665⟩

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Note: A high transmission Faraday optical isolator in the 9.2 μm range

Laurent Hilico , Albane Douillet , Jean-Philippe Karr , Eric Tournié

Review of Scientific Instruments, 2011, pp.1. ⟨10.1063/1.3640004⟩

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Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

Nannicha Hattasan , Alban Gassenq , Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié et al.

IEEE Photonics Technology Letters, 2011, 23 (23), pp.1760 - 1762. ⟨10.1109/LPT.2011.2169244⟩

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Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

Jean-Rémy Reboul , Laurent Cerutti , Jean-Baptiste Rodriguez , Pierre Grech , Eric Tournié

Applied Physics Letters, 2011, 99 (12), pp.121113. ⟨10.1063/1.3644983⟩

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Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells

T. Taliercio , A. Gassenq , E. Luna , A. Trampert , E. Tournié

Applied Physics Letters, 2010, 96 (6), ⟨10.1063/1.3303821⟩

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GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 mu m at Room Temperature

Laurent Cerutti , Jean-Baptiste Rodriguez , Eric Tournié

IEEE Photonics Technology Letters, 2010, 22 (8), pp.553-555. ⟨10.1109/LPT.2010.2042591⟩

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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

E. Luna , B. Satpati , J. B. Rodriguez , A. N. Baranov , E. Tournié et al.

Applied Physics Letters, 2010, 96 (2), ⟨10.1063/1.3291666⟩

Article dans une revue hal-01618582v1

Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method

S. Ben Rejeb , M. Debbichi , M. Saïd , A. Gassenq , E. Tournié et al.

Journal of Physics D: Applied Physics, 2010, 43 (32), ⟨10.1088/0022-3727/43/32/325102⟩

Article dans une revue istex hal-01618573v1

Non-random Be-to-Zn substitution in ZnBeSe alloys : Raman scattering and ab initio calculations

O. Pagès , A.V. Postnikov , A. Chafi , D. Bormann , P. Simon et al.

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 73, pp.461-469. ⟨10.1140/epjb/e2010-00047-0⟩

Article dans une revue istex hal-00534722v1

Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission

S. Ben Rejeb , M. Debbichi , M. Saïd , A. Gassenq , E. Tournié et al.

Journal of Applied Physics, 2010, 108 (9), ⟨10.1063/1.3503513⟩

Article dans une revue hal-01618571v1

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

E. Luna , F. Ishikawa , B. Satpati , Jean-Baptiste Rodriguez , Eric Tournié et al.

Journal of Crystal Growth, 2009, 311, pp.1739-1744. ⟨10.1016/j.jcrysgro.2008.10.039⟩

Article dans une revue istex hal-00462048v1

Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

A. Gassenq , T. Taliercio , L. Cerutti , A. N. Baranov , E. Tournié

Electronics Letters, 2009, 45 (25), ⟨10.1049/el.2009.2207⟩

Article dans une revue hal-01617854v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE

Laurent Cerutti , Arnaud Ducanchez , Grégoire Narcy , Pierre Grech , G. Boissier et al.

Journal of Crystal Growth, 2009, 311 (7), pp.1912-1916. ⟨10.1016/j.jcrysgro.2008.11.026⟩

Article dans une revue istex hal-00380447v1

InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 [micro sign]m at room-temperature

A. Gassenq , G. Boissier , P. Grech , G. Narcy , A. N. Baranov et al.

Electronics Letters, 2009, 45 (3), ⟨10.1049/el:20092882⟩

Article dans une revue hal-01617838v1

Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm

Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié

Electronics Letters, 2009, 45 (5), pp.265-266. ⟨10.1049/el:20090134⟩

Article dans une revue hal-00380609v1

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

J. B. Rodriguez , L. Cerutti , P. Grech , E. Tournié

Applied Physics Letters, 2009, 94 (6), ⟨10.1063/1.3082098⟩

Article dans une revue hal-01617839v1

Cycle de conception d’un laser à semi-conducteur pour la détection de gaz

A. Gassenq , L. Cerutti , A. N. Baranov , E. Tournié

La Revue de l'électricité et de l'électronique, 2009, n° 6/7, pp. 23 - 26

Article dans une revue hal-01828893v1

Type II transition in InSb-based nanostructures for midinfrared applications

R. Intartaglia , G. Rainó , V. Tasco , F. Della Sala , R. Cingolani et al.

Journal of Applied Physics, 2008, 103 (11), ⟨10.1063/1.2938063⟩

Article dans une revue hal-01617298v1

S20 photocathodes grown by molecular-beam deposition

N. Massegu , A. Konrath , J.M. Barois , Philippe Christol , E. Tournié

Electronics Letters, 2008, 44 (4), ⟨10.1049/el:20082829⟩

Article dans une revue hal-01617347v1

Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm

G. Rainò , A. Salhi , V. Tasco , R. Intartaglia , R. Cingolani et al.

Applied Physics Letters, 2008, 92 (10), ⟨10.1063/1.2894586⟩

Article dans une revue hal-01617290v1

Molecular beam epitaxy of InSb/GaSb quantum dots

N. Deguffroy , V. Tasco , A. N. Baranov , E. Tournié , B. Satpati et al.

Journal of Applied Physics, 2007, 101 (12), pp.124309-124309-7. ⟨10.1063/1.2748872⟩

Article dans une revue hal-00327178v1

High-density InSb-based quantum dots emitting in the mid-infrared

V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati et al.

Journal of Crystal Growth, 2007, 301-302, pp.713-717. ⟨10.1016/j.jcrysgro.2006.09.016⟩

Article dans une revue istex hal-00325049v1

MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics

E. Tournié , A. Trampert

physica status solidi (b), 2007, 244 (8), pp.2683-2696. ⟨10.1002/pssb.200675623⟩

Article dans une revue istex hal-00327621v1

Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm

L. Cerutti , G. Boissier , P. Grech , A. Pérona , J. Angellier et al.

Journal of Crystal Growth, 2007, 301-302, pp.967-970. ⟨10.1016/j.jcrysgro.2006.11.057⟩

Article dans une revue istex hal-00327288v1

Investigations on InSb-based quantum dots grown by molecular beam epitaxy

N. Deguffroy , V. Tasco , A. N. Baranov , B. Satpati , A. Trampert et al.

Physica Status Solidi C: Current Topics in Solid State Physics, 2007, 4 (5), pp.1743-1746. ⟨10.1002/pssc.200674268⟩

Article dans une revue istex hal-00327182v1

Interface analysis of InAs/GaSb superlattice grown by MBE

Philippe Christol , B. Satpati , Jean-Baptiste Rodriguez , A. Trampert , Eric Tournié et al.

Journal of Crystal Growth, 2007, 301-302, pp.889 - 892. ⟨10.1016/j.jcrysgro.2006.11.284⟩

Article dans une revue istex hal-01756643v1

High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati et al.

Applied Physics Letters, 2006, 89 (26), pp.263118.1-263118.3. ⟨10.1063/1.2425041⟩

Article dans une revue hal-00328003v1

Structural and optical properties of InSb quantum dots for mid-IR applications

V. Tasco , N. Deguffroy , A. N. Baranov , E. Tournié , B. Satpati et al.

physica status solidi (b), 2006, 243 (15), pp.3959-3962. ⟨10.1002/pssb.200671512⟩

Article dans une revue istex hal-00328071v1

Correlation between quantum well morphology, carrier localization and electronic properties of GaInNAs/GaAs light emitting diodes

J.-M. Ulloa , A. Hierro , J. Miguel-Sanchez , A. Guzman , J.-M. Chauveau et al.

Semiconductor Science and Technology, 2006, 21 (8), pp.1047-1052. ⟨10.1088/0268-1242/21/8/011⟩

Article dans une revue istex hal-00329113v1

Decomposition in as-grown (Ga,In)(N,As) quantum wells.

X. Kong , A. Trampert , E. Tournié , K.H. Ploog

Applied Physics Letters, 2005, 87 (17), pp.171901. ⟨10.1063/1.2108108⟩

Article dans une revue hal-00330374v1

Be–Se double-phonon behavior in Zn1–x–yMgyBexSe alloy

O. Pagès , M. Ajjoun , D. Bormann , E. Tournié

European Physical Journal: Applied Physics, 2004, 95 (12), pp.7690 - 7693. ⟨10.1063/1.1738522⟩

Article dans une revue hal-00330140v1

Does In-bonding delay GaN-segregation in GaInAsN? A Raman study

T. Tite , O. Pagès , E. Tournié

Applied Physics Letters, 2004, 85 (24), pp.5872. ⟨10.1063/1.1829387⟩

Article dans une revue hal-00330630v1

Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes

J.-M. Ulloa , A. Hierro , J. Miguel-Sanchez , A. Guzman , E. Tournié et al.

Applied Physics Letters, 2004, 85 (1), pp.40 - 42. ⟨10.1063/1.1769078⟩

Article dans une revue hal-00327653v1

Long-wave phonons in ZnSe-BeSe mixed crystals: Raman scattering and percolation model

O. Pagès , M. Ajjoun , T. Tite , D. Bormann , E. Tournié et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70 (15), pp.155319.1-155319.10. ⟨10.1103/PhysRevB.70.155319⟩

Article dans une revue hal-00330216v1

From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

T. Taliercio , R. Intartaglia , B. Gil , P. Lefèbvre , T. Bretagnon et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩

Article dans une revue hal-00330627v1

Nanoscale analysis of the In and N spatial redistribution upon annealing of GaInNAs quantum wells

J.-M. Chauveau , A. Trampert , K.H. Ploog , E. Tournié

Applied Physics Letters, 2004, 84 (14), pp.2503 - 2505. ⟨10.1063/1.1690108⟩

Article dans une revue hal-00327645v1

Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys

O. Pagès , T. Tite , D. Bormann , E. Tournié , O. Maksimov et al.

Applied Physics Letters, 2003, 82 (17), pp.2808-2810. ⟨10.1063/1.1566801⟩

Article dans une revue hal-00327726v1

Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

S.E. Grillo , M. Ducarroir , M. Nadal , E. Tournié , J.-P. Faurie.

Journal of Physics D: Applied Physics, 2003, 36 (1), pp.5-9. ⟨10.1088/0022-3727/36/1/102⟩

Article dans une revue istex hal-00329901v1

Isoelectronic traps in heavily doped GaAs:(In,N)

R. Intartaglia , T. Taliercio , P. Valvin , B. Gil , P. Lefèbvre et al.

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (23), pp.235202.1-235202.5. ⟨10.1103/PhysRevB.68.235202⟩

Article dans une revue hal-00327975v1

GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm

E. Tournié , M.-A. Pinault , J.-M. Chauveau , A. Trampert , K.H. Ploog

Applied Physics Letters, 2003, 82 (12), pp.1845-1847. ⟨10.1063/1.1563062⟩

Article dans une revue hal-00327186v1

Effect of nitrogen on the band structure and material gain of InyGa1-yAs1-xNx-GaAs quantum wells

J.-M. Ulloa , J.L. Sanchez-Rojas , A. Hierro , J.M.G. Tijero , E. Tournié

IEEE Journal of Selected Topics in Quantum Electronics, 2003, 9 (3), pp.716-722. ⟨10.1109/JSTQE.2003.818860⟩

Article dans une revue hal-00327321v1

Crystal reorganization upon annealing of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy.

A. Hierro , J.-M. Ulloa , A. Trampert , J.-M. Chauveau , M.-A. Pinault et al.

Journal of Applied Physics, 2003, 94 (4), pp.2319 - 2324. ⟨10.1063/1.1591416⟩

Article dans une revue hal-00327145v1

Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells

J.-M. Chauveau , A. Trampert , K.H. Ploog , M.-A. Pinault , E. Tournié

Applied Physics Letters, 2003, 82 (20), pp.3451-3453. ⟨10.1063/1.1577393⟩

Article dans une revue hal-00327216v1

Scattered light noise in gravitational wave interferometric detectors: a statistical approach

J.Y. Vinet , V. Brisson , S. Braccini , I. Ferrante , L. Pinard et al.

Physical Review D, 1997, 56, pp.6085-6095

Article dans une revue in2p3-00000213v1

Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs

H. Mani , E. Tournié , J.-L. Lazzari , C. Alibert , A. Joullié et al.

Journal of Crystal Growth, 1992, 121 (3), pp.463-472. ⟨10.1016/0022-0248(92)90158-F⟩

Article dans une revue istex hal-03156839v1
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Preparation et étude de diodes laser a GaInAsSb-GaAlAsSb fonctionnant en continu à 80K

F. Pitard , E. Tournié , M. Mohou , G. Boissier , J.-L. Lazzari et al.

Journal de Physique III, 1991, 1 (4), pp.605-622. ⟨10.1051/jp3:1991143⟩

Article dans une revue jpa-00248604v1

GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm

E. Tournié , J.-L. Lazzari , E. Villemain , A. Joullié , L. Gouskov et al.

Electronics Letters, 1991, 27 (14), pp.1237. ⟨10.1049/el:19910776⟩

Article dans une revue hal-03156834v1

2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy

E. Tournié , J.-L. Lazzari , F. Pitard , C. Alibert , A. Joullié et al.

Journal of Applied Physics, 1990, 68 (11), pp.5936-5938. ⟨10.1063/1.346925⟩

Article dans une revue hal-03156369v1

Study of physical properties of antiphase boundaries in III-V epitaxial layer on silicon with conductive tip atomic force microscopy (C-AFM) and with Kelvin Probe Force Microscopy (KPFM) techniques.

Rozenn Bernard , Michel Ramonda , Audrey Gilbert , Tony Rohel , Julie Le Pouliquen et al.

C'NANO, 2025, Paris, France

Poster de conférence hal-05296571v1
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Threading and misfit dislocations study by Electron Channeling Contrast Imaging

Audrey Gilbert , Ariane Meguekam-Sado , Eric Tournié , Jean-Baptiste Rodriguez

Euro MBE 2025, Mar 2025, Auron, France

Poster de conférence hal-04992047v1

Etude des propriétés de transport des parois d’antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM.

Rozenn Bernard , Michel Ramonda , Audrey Gilbert , Tony Rohel , Julie Le Pouliquen et al.

GDR MatEpi, 2025, Lille, France

Poster de conférence hal-05296596v1
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Intégration de source ICL sur plateforme SiGe par micro transfer-printing

Yannis Billiet , Céline Chevalier , Xavier Letartre , Jean -Louis Leclercq , Christian Grillet et al.

Journées Nationales d'Optique Guidée, Jul 2024, Rouen, France

Poster de conférence hal-04865317v1

Direct growth of GaSb on Ge, Ge-on-Si and SiGe-on-Si platforms for integrated mid infra-red photonics

Milan Silvestre , Jean-Baptiste Rodriguez , Stefano Calcaterra , Giovanni Isella , Eric Tournié

The 23rd International Conference on Molecular Beam Epitaxy (ICMBE 2024), Sep 2024, Matsue, Japan

Poster de conférence hal-04737853v1
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Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics

Milan Silvestre , Audrey Gilbert , Stefano Calcaterra , Giovanni Isella , Jean-Baptiste Rodriguez et al.

Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.

Poster de conférence hal-04738104v1
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Intégration de laser cascade interbande sur plateforme photonique SiGe par micro transfer-printing

Yannis Billiet , Céline Chevalier , Xavier Letartre , Jean -Louis Leclercq , Pierre Cremillieu et al.

JNMO 2024 - Journées Nano, Micro, et Optoélectronique, Oct 2024, Sète, France.

Poster de conférence hal-04864948v1
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Kinetic Monte Carlo simulation of GaAs growth on (001) Silicon

Milan Silvestre , Audrey Gilbert , Stefano Calcaterra , Giovanni Isella , Jean-Baptiste Rodriguez et al.

Journées Nano, Micro et Optoélectronique (JNMO 2024), Oct 2024, Sète, France.

Poster de conférence hal-04738181v1
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Intégration par Micro-Transfer-Printing de source ICL sur plateforme photonique Si/SiGe

Yannis Billiet , Céline Chevalier , Xavier Letartre , Jean -Louis Leclercq , Pierre Cremillieu et al.

Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication, Nov 2024, Saint etienne, France

Poster de conférence hal-04865345v1
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Type-I and type-II interband cascade lasers emitting around 2.7 µm

Maeva Fagot , Daniel Andrés Díaz-Thomas , Yves Rouillard , Jean-Baptiste Rodriguez , Eric Tournié et al.

Journées Nano, Micro et Optoelectronique (JNMO) 2024, Oct 2024, Sète, France

Poster de conférence hal-04738411v1
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Type-II Interband cascade lasers grown on (100) GaAs substrates

Maeva Fagot , Daniel Andres Diaz Thomas , Michel Ramonda , Gad Kombila , Jean-Baptiste Rodriguez et al.

21st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain. 2023

Poster de conférence hal-04282761v1

Effectiveness of AlSb dislocation filter layer during GaSb‐on‐Si epitaxy

Karl Graser , Audrey Gilbert , Steffen Richter , Jean-Baptiste Rodriguez , Laurent Cerutti et al.

Euro MBE 2023, Apr 2023, Madrid, Spain.

Poster de conférence hal-04739795v1
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MIR Sb-based Interband cascade lasers on metamorphic substrates

Maeva Fagot , Daniel Andres Diaz-Thomas , Audrey Gilbert , Michel Ramonda , Gad Kombila et al.

International Nano-Optoelectronics Workshop (iNOW) 2023, Jul 2023, Würzburg, Germany. 2023

Poster de conférence hal-04282939v1
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ICLs à 3,3 µm sur substrats de GaSb, GaAs et Si (001)

Maeva Fagot , Daniel Andres Diaz-Thomas , Audrey Gilbert , Michel Ramonda , Gad Kombila et al.

GDR MatEpi 2023, Jul 2023, Paris, France. 2023

Poster de conférence hal-04282846v1

Epitaxy and Characterization of InP/InGaAs Tandem Solar Cells grown by MOVPE on InP and Si Substrate

Stefano Soresi , Mattia da Lisca , Claire Besançon , Nicolas Vaissiere , Alexandre Larrue et al.

8th World Conference on Photovoltaic Energy Conversion (WCPEC-8), Sep 2022, Milan, Italy

Poster de conférence hal-03878592v1

Caractérisation et modélisation d’une cellule tandem AlGaAsSb/GaSb

Lucas Gavotto , Joanna Kret , S. Parola , Frédéric Martinez , Yves Rouillard et al.

Journées Nationales du Photovoltaïque, Nov 2021, Dourdan, France

Poster de conférence hal-03641823v1

In situ determination of the optimized growth conditions of GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez

10th International Workshop on Bismuth-Containing Semiconductors, 2019, Toulouse, France

Poster de conférence hal-02327276v1

Ga(In)SbBi alloys for mid-IR applications: growth and characterization

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez

16èmes journées Nano, Micro et Optoélectronique, 2018, Cap Esterel, France

Poster de conférence hal-02327294v1

GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization

Olivier Delorme , Laurent Cerutti , Robert Kudrawiec , Esperanza Luna , J. Kopaczek et al.

34th International Conference on the Physics of Semiconductors, 2018, Montpellier, France

Poster de conférence hal-02327289v1

Growth and characterization of high Bi-content GaSbBi alloys

Olivier Delorme , Laurent Cerutti , Eric Tournié , Jean-Baptiste Rodriguez

19th European Workshop on Molecular Beam Epitaxy, 2017, Saint-Petersburg, Russia

Poster de conférence hal-02327303v1
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Journées Nano, Micro et Optoélectronique (JNMO)

Jean-Philippe Perez , Fernando Gonzalez-Posada Flores , Aurore Vicet , Laurent Cerutti , Eric Tournié et al.

Journées Nano, Micro et Optoélectronique (JNMO) 2024, 2024

Proceedings/Recueil des communications hal-04904732v1

Mid-infrared Optoelectronics

Eric Tournié , Laurent Cerutti

Woodhead Publishing. , 2019, 9780081027097

Ouvrages hal-02369706v1

Semiconductor lasers

Alexei Baranov , Eric Tournié

Woodhead Publishing Limited, 33, 2013, Woodhead Publishing Series in Electronic and Optical Materials, 9780857091215. ⟨10.1533/9780857096401⟩

Ouvrages hal-02342605v1
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GaSbBi alloys and heterostructures: fabrication and properties

O. Delorme , L. Cerutti , R. Kudrawiec , Esperanza Luna , J. Kopaczek et al.

Wang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8. ⟨10.1007/978-981-13-8078-5_6⟩

Chapitre d'ouvrage hal-02326182v1

Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices

Eric Tournié

Molecular Beam Epitaxy, John Wiley & Sons Ltd, pp.233-246, 2019, 978-1-119-35502-1. ⟨10.1002/9781119354987.ch14⟩

Chapitre d'ouvrage hal-02342601v1

Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si

Eric Tournié , Jean-Baptiste Rodriguez , Laurent Cerutti , Roland Teissier , Alexei Baranov

Silicon Photonics, 99, Academic Press, pp.1-25, 2018, Semiconductor and Semimetals, 978-0-12-815099-3. ⟨10.1016/bs.semsem.2018.08.002⟩

Chapitre d'ouvrage hal-02342602v1

GaSb Lasers Grown on Silicon Substrate for Telecom Applications

Eric Tournié , Andrea Castellano , Karine Madiomanana , Grégoire Narcy , Alexandre Garreau et al.

Molecular Beam Epitaxy, Elsevier, pp.625-635, 2018, 978-0-12-812136-8. ⟨10.1016/B978-0-12-812136-8.00029-3⟩

Chapitre d'ouvrage hal-02342603v1

Mid-Infrared Semiconductor Lasers

Eric Tournié , Alexei Baranov

Advances in Semiconductor Lasers, 86, Academic Press, pp.183-226, 2012, Semiconductors and Semimetals, 978-0-12-391066 0. ⟨10.1016/B978-0-12-391066-0.00005-8⟩

Chapitre d'ouvrage hal-02342607v1

Photo- and electro- luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes

A. Hierro , J.-M. Ulloa , J. Miguel-Sanchez , A., Guzman Fernandez , Achim Trampert et al.

Nitrides and diluted nitrides: Growth, physics and devices, Research Signpost, pp.77-98, 2007, 978-81-7895-250-5

Chapitre d'ouvrage hal-02342608v1

Mixed III-V-N semiconductors: a challenge for tomorrow?

E. Tournié , Bernard Gil

Low-Dimensional Nitride Semiconductors, Oxford University Press, pp.415-455, 2002, 9780198509745

Chapitre d'ouvrage hal-02342609v1