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Erwann Fourmond

27
Documents
Identifiants chercheurs

Présentation

INSA Lyon Laboratoire INL, équipe [i-Lum, ](https://inl.cnrs.fr/ingenierie-et-conversion-de-lumiere-i-lum/) [Groupe Photovoltaïque](https://inl.cnrs.fr/gp-photovoltaique/)
INSA Lyon INL laboratory, [i-Lum Team, ](https://inl.cnrs.fr/ingenierie-et-conversion-de-lumiere-i-lum/) [Photovoltaic Group ](https://inl.cnrs.fr/gp-photovoltaique/)

Publications

mustapha-lemiti

Laser ablation compatible substoichiometric SiO x /SiN y passivating rear side mirror for passivated emitter and rear thin-film crystalline silicon solar cells

Félix Gerenton , Fabien Mandorlo , Erwann Fourmond , Marine Le Coz , Danièle Blanc-Pelissier
Journal of Vacuum Science & Technology A, 2016, 34 (5), ⟨10.1116/1.4958985⟩
Article dans une revue hal-01804809v1
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Optical properties of porous Si/PECVD SiNX:H reflector on single crystalline Si for solar cells

L. Remache , T. Nychyporuk , N. Guermit , E. Fourmond , A. Mahdjoub
Materials Science-Poland, 2016, 34 (1), pp.94-100. ⟨10.1515/msp-2016-0054⟩
Article dans une revue hal-01804063v1
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Impact of compensation on boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Maxime Forster , J. Degoulange , R. Einhaus , G. Galbiati , E. Rougieux
Solar Energy Materials and Solar Cells, 2014, 120, pp.390-395
Article dans une revue hal-01490336v1

Compensation engineering for uniform n-type silicon ingots

Maxime Forster , Bastien Dehestru , Antoine Thomas , Erwann Fourmond , Roland Einhaus
Solar Energy Materials and Solar Cells, 2013, 111, pp.146-152. ⟨10.1016/j.solmat.2013.01.001⟩
Article dans une revue hal-01890401v1
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Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

M. Forster , Fiacre Emile Rougieux , A. Cuevas , B. Dehestru , A. Thomas
IEEE Journal of Photovoltaics, 2013, 3 (1), pp.108 - 113. ⟨10.1109/JPHOTOV.2012.2210032⟩
Article dans une revue hal-01890802v1
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Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

M. Forster , A. Cuevas , E. Fourmond , F E Rougieux , M. Lemiti
Journal of Applied Physics, 2012, 111 (4), pp.043701. ⟨10.1063/1.3686151⟩
Article dans une revue hal-02047842v1
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Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Maxime Forster , Erwann Fourmond , Fiacre E. Rougieux , Andres Cuevas , R. Gotoh
Applied Physics Letters, 2012, 100 (4), ⟨10.1063/1.3680205⟩
Article dans une revue hal-01890459v1

Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of antireflective porous silicon coatings for silicon solar cells

L. Remache , A. Mahdjoub , E. Fourmond , J. Dupuis , M. Lemiti
physica status solidi (c), 2011, 8 (6), pp.1893 - 1897. ⟨10.1002/pssc.201000110⟩
Article dans une revue hal-01890411v1
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Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Maxime Forster , Erwann Fourmond , Roland Einhaus , Hubert Lauvray , Jed Kraiem
physica status solidi (c), 2011, 8 (3), pp.678-681. ⟨10.1002/pssc.201000330⟩
Article dans une revue hal-02333385v1
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Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

J. Dupuis , E. Fourmond , D. Ballutaud , N. Bererd , M. Lemiti
Thin Solid Films, 2010, 519, pp.1325-1333. ⟨10.1016/j.tsf.2010.09.036⟩
Article dans une revue in2p3-00734027v1
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Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

J.-F. Lelièvre , E. Fourmond , A. Kaminski , Olivier Palais , D. Ballutaud
Solar Energy Materials and Solar Cells, 2009, 93 (8), pp.1281 - 1289. ⟨10.1016/j.solmat.2009.01.023⟩
Article dans une revue hal-01706842v1

Interdigitated back contact solar cells with SiO2 and SiN back surface passivation

I. Jozwik , P. Papet , A. Kaminski , E. Fourmond , F. Calmon
Journal of Non-Crystalline Solids, 2008, 354 (35-39), pp.4341-4344. ⟨10.1016/j.jnoncrysol.2008.06.083⟩
Article dans une revue hal-02328336v1
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Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Julien Dupuis , Erwann Fourmond , Jean-François Lelièvre , Dominique Ballutaud , Mustapha Lemiti
Thin Solid Films, 2008, pp.6954-6958. ⟨10.1016/j.tsf.2007.12.026⟩
Article dans une revue hal-00951444v1

Electro-optical characterisation for the control of silicon nanocrystals embedded in SiNx:H films

J-F Lelièvre , H Rodriguez , E. Fourmond , S Quoizola , M. Lipinski
physica status solidi (c), 2007, 4 (4), pp.1554 - 1559. ⟨10.1002/pssc.200674142⟩
Article dans une revue hal-01890307v1

Investigation of graded index SiOxNy antireflection coating for silicon solar cell manufacturing

M. Lipiński , A. Kaminski , J.-F. Lelièvre , M. Lemiti , E. Fourmond
physica status solidi (c), 2007, 4 (4), pp.1566-1569. ⟨10.1002/pssc.200674143⟩
Article dans une revue hal-02328307v1

MICROWAVE PECVD SYSTEM FOR SiNx:H ANTIREFLECTION COATINGS AND HYDROGEN PASSIVATION ON MULTICRYSTALLINE SILICON

E. Fourmond , M. Lemiti , C. Trassy , A. Laugier
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, 2003, 7 (2), pp.10. ⟨10.1615/HighTempMatProc.v7.i2.130⟩
Article dans une revue hal-02328295v1
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Comparison between SiN x :H and hydrogen passivation of electromagnetically casted multicrystalline silicon material

E. Fourmond , R. Bilyalov , E. van Kerschaver , M. Lemiti , J. Poortmans
Solar Energy Materials and Solar Cells, 2002, 72 (1-4), pp.353 - 359. ⟨10.1016/S0927-0248(01)00183-0⟩
Article dans une revue hal-02328273v1

Influence of the Aminated Conditions on the pH Sensitivity of Silica and Amorphous Silicon Film

Z.M. Baccar , N. Jaffrezic-Renault , E. Fourmond , M. Lemiti , F.F. Grekov
Journal of the European Ceramic Society, 1997, 17 (15-16), pp.202 - 2024
Article dans une revue hal-01974244v1
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Passivating Properties of Hydrogenated Amorphous Silicon Carbide Deposited by PECVD Technique for Photovoltaic Applications

Aurélien Gaufrès , Erwann Fourmond , Frédéric Husser , M. Lemiti
3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013), Mar 2013, Hameln, Germany. pp.823 - 832, ⟨10.1016/j.egypro.2013.07.352⟩
Communication dans un congrès hal-01890554v1

The PROTERRA project : advanced processes using alternative raw materials for an economic production of high efficiency solar cells and modules

N. Le Quang , M. Gauthier , M. Gerard , S. Williatte , A.M. Rambaud
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013, 2013, Paris, France. paper 2DV.3.42, 1952-1956, ⟨10.4229/28thEUPVSEC2013-2DV.3.42⟩
Communication dans un congrès hal-00908679v1
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USE OF AMORPHOUS HYDROGENATED SILICON CARBIDE AS A REAR-SIDE PASSIVATION LAYER FOR CRYSTALLINE SILICON SOLAR CELLS

Aurélien Gaufrès , Frédéric Husser , Erwann Fourmond , Rémi Monna , M. Lemiti
28th European Photovoltaic Solar Energy Conference, Sep 2013, Paris, France
Communication dans un congrès hal-01890566v1
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SIOxNy – SINx DOUBLE ANTIREFLECTION LAYER FOR MULTICRYSTALLINE SILICON SOLAR CELLS

Julien Dupuis , J.-F. Lelièvre , Erwann Fourmond , Virginie Mong-The Yen , O. Nichiporuk
24th European Photovoltaic Solar Energy Conference (PVSEC 2009), Sep 2009, Hambourg, Germany. pp.1636 - 1639, ⟨10.4229/24thEUPVSEC2009-2CV.2.59⟩
Communication dans un congrès hal-01457852v1
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Study of rear pecvd dielectrics stacks for industrial silicon solar cells

Julien Dupuis , Erwann Fourmond , Virginie Mong-The Yen , Oleksiy Nichiporuk , Mathias Greffioz
Proc. of the 24th European PVSEC, Sep 2009, Hamburg, France. pp.4
Communication dans un congrès hal-00593537v1
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Impact of ammonia pretreatment of the silicon surface prior to the deposition of silicon nitride layer by pecvd

Erwann Fourmond , Julien Dupuis , F. Marcq , C. Dubois , Mustapha Lemiti
23rd European Photovoltaic Solar Energy Conference and Exhibition, Sep 2008, Valencia, Spain. pp.1629-1632
Communication dans un congrès hal-00546519v1
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a-Si:H/c-Si Heterojunction Solar Cells on 50 µm Thick Wafers With Rear Point Contacts

S Amtablian , M Labrune , P Carroy , J. Dupuis , E. Fourmond
23rd European Photovoltaic Solar Energy Conference and Exhibition, Jan 2008, Valencia, Spain
Communication dans un congrès hal-02328386v1