Etienne Gheeraert Professeur à l'université Grenoble Alpes,Institut Néel

Identifiants chercheurs

IdHAL :

etienne-gheeraert

ORCID :

0000-0002-9952-5805

IdRef :

075094541

ResearcherID :

http://www.researcherid.com/rid/E-8071-2015

Publications

Article dans une revue (54)

Thermal catalytic etching of diamond by double-metal layers D.D. Tran,C. Mannequin,M. Bonvalot,A. Traoré,H. Marietteet al. Diamond and Related Materials, 2024, 145, pp.111075. ⟨10.1016/j.diamond.2024.111075⟩ Article dans une revue hal-04606937v1
Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone Coralie Perrier,Aboulaye Traoré,Toshimitsu Ito,Hitoshi Umezawa,Etienne Gheeraertet al. Applied Physics Letters, 2023, 122 (22), pp.222105. ⟨10.1063/5.0149969⟩ Article dans une revue hal-04149832v1
High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry Jesús Cañas,Daniel Reyes,Alter Zakhtser,Christian Dussarrat,Takashi Teramotoet al. Nanomaterials, 2022, 12 (23), pp.4125. ⟨10.3390/nano12234125⟩ Article dans une revue hal-04149856v1
Photon-Correlation Cathodoluminescence Spectroscopy in a SEM: A Tool to Analyze the Performance of Optoelectronics Devices Sylvain Finot,Corentin Le Maoult,Etienne Gheeraert,David Vaufrey,Gwenolé Jacopin Microscopy and Microanalysis, 2022, 28 (S1), pp.2012-2013. ⟨10.1017/S1431927622007814⟩ Article dans une revue hal-04149843v1
High quality SiO 2 /diamond interface in O-terminated p-type diamond MOS capacitors J. Cañas,C. Dussarrat,T. Teramoto,C. Masante,M. Gutierrezet al. Applied Physics Letters, 2022, 121 (7), pp.072101. ⟨10.1063/5.0103037⟩ Article dans une revue hal-03769689v1
Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy Junjie Guo,Aboulaye Traore,Masahiko Ogura,Muhammad Hafiz Bin Abu Bakar,Satoshi Yamasakiet al. Japanese Journal of Applied Physics, 2021, 60 (SB), pp.SBBD07. ⟨10.35848/1347-4065/abdf75⟩ Article dans une revue hal-03167465v1
Normally-OFF Diamond Reverse Blocking MESFET J. Canas,A. C. Pakpour-Tabrizi,T. Trajkovic,F. Udrea,David Eonet al. IEEE Transactions on Electron Devices, 2021, 68 (12), pp.6279-6285. ⟨10.1109/TED.2021.3117237⟩ Article dans une revue hal-04149880v1
Diamond/γ-alumina band offset determination by XPS J. Cañas,G. Alba,D. Leinen,F. Lloret,M. Gutierrezet al. Applied Surface Science, 2021, 535, pp.146301. ⟨10.1016/j.apsusc.2020.146301⟩ Article dans une revue hal-03167438v1
Surface recombinations in III-nitride micro-LEDs probed by photon-correlation cathodoluminescence Sylvain Finot,Corentin Le Maoult,Etienne Gheeraert,David Vaufrey,Gwenolé Jacopin ACS photonics, 2021, 9 (1), pp.173-178. ⟨10.1021/acsphotonics.1c01339⟩ Article dans une revue hal-03469521v1
Analysis of InGaN surfaces after chemical treatments and atomic layer deposition of Al2O3 for uLED applications Corentin Le Maoult,David Vaufrey,François Martin,Eugénie Martinez,Emmanuel Nolotet al. Proceedings of SPIE, the International Society for Optical Engineering, 2020, 11280, pp.112801C. ⟨10.1117/12.2544787⟩ Article dans une revue cea-02941396v2
Comparative study of two atomic layer etching processes for GaN Cédric Mannequin,Christophe Vallée,Katsuhiro Akimoto,Thierry Chevolleau,Christophe Durandet al. Journal of Vacuum Science & Technology A, 2020, 38 (3), pp.032602. ⟨10.1116/1.5134130⟩ Article dans une revue hal-02917577v1
High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication Thanh-Toan Pham,C. Gutierrez,C. Masante,Nicolas C. Rouger,David Eonet al. Applied Physics Letters, 2018, 112 (10), pp.102103. ⟨10.1063/1.5018403⟩ Article dans une revue hal-01757878v1
Comprehensive electrical analysis of metal/Al 2 O 3 /O-terminated diamond capacitance T. Pham,A. Maréchal,P. Muret,David Eon,E. Gheeraertet al. Journal of Applied Physics, 2018, 123 (16), pp.161523. ⟨10.1063/1.4996114⟩ Article dans une revue hal-01701727v1
Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors O. Loto,M. Florentin,C. Masante,N. Donato,M. Hickset al. IEEE Transactions on Electron Devices, 2018, 65 (8), pp.3361-3364. ⟨10.1109/TED.2018.2847340⟩ Article dans une revue hal-01977929v1
Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors T. Pham,J. Piñero,A. Maréchal,M. Gutierrez,F. Lloretet al. IEEE Transactions on Electron Devices, 2018, 65 (5), pp.1830-1837. ⟨10.1109/TED.2018.2813084⟩ Article dans une revue hal-01757885v1
Electric field distribution using floating metal guard rings edge-termination for Schottky diodes Khaled Driche,Sarah Rugen,Nando Kaminski,Hitoshi Umezawa,Hajime Okumuraet al. Diamond and Related Materials, 2018, 82, pp.160-164. ⟨10.1016/j.diamond.2018.01.016⟩ Article dans une revue hal-01990943v1
Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current Khaled Driche,Hitoshi Umezawa,Shinya Ohmagari,Hajime Okumura,Yoshiaki Mokunoet al. Materials Science Forum, 2018, 924, pp.935-938. ⟨10.4028/www.scientific.net/MSF.924.935⟩ Article dans une revue hal-01990947v1
Deep depletion concept for diamond MOSFET T. Pham,Nicolas C. Rouger,C. Masante,G. Chicot,F. Udreaet al. Applied Physics Letters, 2017, 111 (17), pp.173503. ⟨10.1063/1.4997975⟩ Article dans une revue hal-01701733v1
Defect and field-enhancement characterization through electron-beam-induced current analysis Hitoshi Umezawa,Hiroki Gima,Khaled Driche,Yukako Kato,Tsuyoshi Yoshitakeet al. Applied Physics Letters, 2017, 110 (18), pp.182103. ⟨10.1063/1.4982590⟩ Article dans une revue hal-01617264v1
Carbon nanotube forest based electrostatic capacitor with excellent dielectric performances Shenghong Yao,Jinkai Yuan,Hasan-Al Mehedi,Etienne Gheeraert,Alain Sylvestre Carbon, 2017, 116, pp.648-654. ⟨10.1016/j.carbon.2017.02.043⟩ Article dans une revue istex hal-01512690v1
Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients Khaled Driche,H. Umezawa,Nicolas Clément, Jean-Paul Rouger,Gauthier Chicot,Etienne Gheeraert Japanese Journal of Applied Physics, 2017, 56 (4S), pp.04CR12. ⟨10.7567/JJAP.56.04CR12⟩ Article dans une revue hal-01502587v1
Deep-depletion mode boron doped monocrystalline diamond metal oxide semiconductor field effect transistor Thanh-Toan Pham,Julien Pernot,Gaëtan Perez,David Eon,Etienne Gheeraertet al. IEEE Electron Device Letters, 2017, 38 (11), pp.1571-1574. ⟨10.1109/LED.2017.2755718⟩ Article dans une revue hal-01617256v1
Mechanism of reverse current increase of vertical-type diamond Schottky diodes T. Teraji,A. Fiori,N. Kiritani,S. Tanimoto,E. Gheeraertet al. Journal of Applied Physics, 2017, 122 (13), pp.135304. ⟨10.1063/1.4994570⟩ Article dans une revue hal-01617252v1
Effects of high-power laser irradiation on sub-superficial graphitic layers in single-crystal diamond F. Picollo,S. Rubanov,C. Tomba,A. Battiato,E. Enricoet al. Acta Materialia, 2016, 103, pp.665-671. ⟨10.1016/j.actamat.2015.10.046⟩ Article dans une revue in2p3-01270645v1
Hole injection contribution to transport mechanisms in metal/p− /p++and metal/oxide/p− /p++ diamond structures Pierre Muret,David Eon,Aboulaye Traoré,Aurélien Maréchal,Julien Pernotet al. Physica Status Solidi A (applications and materials science), 2015, 212 (11), pp.2501-2506. ⟨10.1002/pssa.201532187⟩ Article dans une revue hal-01258521v1
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor Aurélien Maréchal,Manuela Aoukar,Christophe Vallee,Chloé Rivière,David Eonet al. Applied Physics Letters, 2015, 107 (14), pp.141601. ⟨10.1063/1.4931123⟩ Article dans une revue hal-01364101v1
Diamond as substrate for 3C-SiC growth: A TEM study Gabriel Ferro,F. Lloret,J. Piñero,D. Araujo,M. Villaret al. Physica Status Solidi A (applications and materials science), 2014, 211 (10), pp.2302 - 2306. ⟨10.1002/pssa.201431179⟩ Article dans une revue istex hal-01615313v1
Zr/oxidized diamond interface for high power Schottky diodes Aboulaye Traoré,Pierre Muret,Alexandre Fiori,David Eon,Etienne Gheeraertet al. Applied Physics Letters, 2014, 104 (5), pp.052105. ⟨10.1063/1.4864060⟩ Article dans une revue hal-00943411v1
Doping and interface of homoepitaxial diamond for electronic applications S. Yamasaki,Etienne Gheeraert,Yasuo Koide MRS Bulletin, 2014, 39 (6), pp.499. ⟨10.1557/mrs.2014.100⟩ Article dans une revue hal-01147810v1
Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations Aurélien Maréchal,Nicolas Clément, Jean-Paul Rouger,Jean-Christophe Crébier,Julien Pernot,Satoshi Koizumiet al. Diamond and Related Materials, 2014, 43, pp.34. ⟨10.1016/j.diamond.2014.01.009⟩ Article dans une revue istex hal-00968208v1
Etching mechanism of diamond by Ni nanoparticles for fabrication of nanopores Hasan-Al Mehedi,Jean-Charles Arnault,David Eon,Clément Hébert,Davy Caroleet al. Carbon, 2013, 59, pp.448-456. ⟨10.1016/j.carbon.2013.03.038⟩ Article dans une revue hal-00854585v1
A composite material made of carbon nanotubes partially embedded in a nanocrystalline diamond film Clément Hébert,Sébastien Ruffinatto,David Eon,Michel Mermoux,Etienne Gheeraertet al. Carbon, 2013, 52, pp.408-417. ⟨10.1016/j.carbon.2012.09.051⟩ Article dans une revue istex hal-00854594v1
Synchronized B and 13C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization Alexandre Fiori,François Jomard,Tokuyuki Teraji,Satoshi Koizumi,Junichi Isoyaet al. Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.045801. ⟨10.7567/APEX.6.045801⟩ Article dans une revue hal-00838943v1
Metal oxide semiconductor structure using oxygen-terminated diamond Gauthier Chicot,Aurélien Maréchal,Renaud Motte,Pierre Muret,Etienne Gheeraertet al. Applied Physics Letters, 2013, 102 (24), pp.242108. ⟨10.1063/1.4811668⟩ Article dans une revue hal-00854602v1
Hole transport in boron delta-doped diamond structures Gauthier Chicot,Thu Nhi Tran Thi,Alexandre Fiori,François Jomard,Etienne Gheeraertet al. Applied Physics Letters, 2012, 101, pp.162101. ⟨10.1063/1.4758994⟩ Article dans une revue hal-00760789v1
Formation of oriented nanostructures in diamond using metallic nanoparticles Hasan-Al Mehedi,Clément Hébert,Sébastien Ruffinatto,David Eon,Franck Omnèset al. Nanotechnology, 2012, 23 (45), pp.455302. ⟨10.1088/0957-4484/23/45/455302⟩ Article dans une revue istex hal-00744357v1
Diamond nanophotonics Katja Beha,Helmut Fedder,Marco Wolfer,Merle C. Becker,Petr Siyushevet al. Beilstein Journal of Nanotechnology, 2012, 2, pp.895. ⟨10.3762/bjnano.3.100⟩ Article dans une revue hal-00968240v1
High- field magnetospectroscopy to probe the 1.4-eV Ni color center in diamond Paulina Plochocka,Oliver Portugall,P. Y. Solane,Etienne Gheeraert,Laurent Rannoet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (4), pp.045203. ⟨10.1103/PhysRevB.86.045203⟩ Article dans une revue hal-00755551v1
Investigation of nickel lattice sites in diamond: Density functional theory and x-ray absorption near-edge structure experiments Etienne Gheeraert,Amit Kumar,Etienne Bustarret,Laurent Ranno,Laurence Magaudet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (5), pp.054116. ⟨10.1103/PhysRevB.86.054116⟩ Article dans une revue hal-00740289v1
In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures Alexandre Fiori,Thu Nhi Tran Thi,Gauthier Chicot,François Jomard,Franck Omnèset al. Diamond and Related Materials, 2012, 24, pp.175-178. ⟨10.1016/j.diamond.2012.01.018⟩ Article dans une revue istex hal-00739488v1
Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes Thu Nhi Tran Thi,Bruno Fernandez,David Eon,Etienne Gheeraert,Juergen Haertwiget al. Physica Status Solidi A (applications and materials science), 2011, 208 (9), pp.2057-2061. ⟨10.1002/pssa.201100038⟩ Article dans une revue hal-00740914v1
Dry etching of diamond nanowires using self-organized metal droplet masks Wiebke Janssen,Etienne Gheeraert Diamond and Related Materials, 2011, 20 (3), pp.389-394. ⟨10.1016/j.diamond.2011.01.037⟩ Article dans une revue istex hal-00734741v1
Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators Mourad Benabdesselam,A. Petitfils,Frédéric Wrobel,Franck Mady,Serge Marcieet al. Diamond and Related Materials, 2011, 20 (4), pp.520-522. ⟨10.1016/j.diamond.2011.02.004⟩ Article dans une revue istex hal-00740867v1
Simulations of carrier confinement in boron delta-doped diamond devices Alexandre Fiori,Julien Pernot,Etienne Gheeraert,Etienne Bustarret Physica Status Solidi A (applications and materials science), 2010, 207 (9), pp.2084-2087. ⟨10.1002/pssa.201000062⟩ Article dans une revue istex hal-00739710v1
Doping of single crystalline diamond with nickel M. Wolfer,H. Obloh,O. A. Williams,C.-C. Leancu,L. Kirsteet al. Physica Status Solidi A (applications and materials science), 2010, 207 (9), pp.2054-2057. ⟨10.1002/pssa.201000364⟩ Article dans une revue istex hal-00740916v1
Bottom-up fabrication of diamond nanowire arrays Wiebke Janssen,Sebastian Faby,Etienne Gheeraert Diamond and Related Materials, 2010, 20 (5-6), pp.779-781. ⟨10.1016/j.diamond.2011.03.024⟩ Article dans une revue istex hal-00739484v1
Magneto-optical spectroscopy of (Ga,Mn)N epilayers Stéphane Marcet,David Ferrand,David Halley,Shinji Kuroda,Henri Marietteet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (12), pp.125201. ⟨10.1103/PhysRevB.74.125201⟩ Article dans une revue hal-00022115v1
Micro-Raman scattering from undoped and phosphorus-doped (111) homoepitaxial diamond films: Stress imaging of cracks Michel Mermoux,Bernadette Marcus,Alexandre Crisci,Antonella Tajani,Etienne Gheeraertet al. Journal of Applied Physics, 2005, 97 (4), p. 043530(12 p.). ⟨10.1063/1.1849828⟩ Article dans une revue hal-00386425v1
High-resolution spectroscopic investigation of the Mn centre in GaN T. Yamamoto,S. Marcet,Etienne Gheeraert,S. Kuroda,H. Marietteet al. Journal of Crystal Growth, 2005, 275 (1-2), pp.e2233-e2237. ⟨10.1016/j.jcrysgro.2004.11.310⟩ Article dans une revue istex hal-04066370v1
Characterization of ‹111› diamond thin films by micro-Raman spectroscopy Michel Mermoux,Antonella Tajani,Bernadette Marcus,Etienne Bustarret,Etienne Gheeraertet al. Diamond and Related Materials, 2004, 13 (4-8), pp. 886-890. ⟨10.1016/j.diamond.2003.12.002⟩ Article dans une revue istex hal-00417861v1
Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films E. Bustarret,J. Kacmarcik,C. Marcenat,E. Gheeraert,C. Cytermannet al. Physical Review Letters, 2004, 93, pp.237005. ⟨10.1103/PhysRevLett.93.237005⟩ Article dans une revue hal-00959093v1
Internal stresses in {111} homoepitaxial CVD diamond Michel Mermoux,Bernadette Marcus,Alexandre Crisci,Antonella Tajani,Etienne Gheeraertet al. Diamond and Related Materials, 2004, 13 (2), pp. 329-334. ⟨10.1016/j.diamond.2003.11.005⟩ Article dans une revue istex hal-00417859v1
Strains and cracks in undoped and phosphorus-doped {111} homoepitaxial diamond films Antonella Tajani,Michel Mermoux,Bernadette Marcus,Etienne Bustarret,Etienne Gheeraertet al. Physica Status Solidi A (applications and materials science), 2003, 199 (1), pp. 87-91. ⟨10.1002/pssa.200303813⟩ Article dans une revue istex hal-00418044v1
The first bump-bonded pixel detectors on CVD diamond W. Adam,C. Bauer,E. Berdermann,P. Bergonzo,F. Boganiet al. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999, 436, pp.326-335 Article dans une revue in2p3-00012128v1

Communication dans un congrès (33)

Towards the implementation of diamond power devices in power converters and measurements of their switching losses Nicolas C. Rouger,Damien Risaletto,Pierre Lefranc,Pierre-Olivier Jeannin,Hugo Cagnolet al. MRS Spring Meeting 2021, Apr 2021, Seattle WA, United States Communication dans un congrès hal-03289135v1
Comparative study of two Atomic Layer Etching processes for GaN C. Mannequin,C. You,Gwenolé Jacopin,T. Chevolleau,C. Durandet al. 19th International Conference on Atomic layer Deposition (ALD2019), Jul 2019, Bellevue WA, United States Communication dans un congrès hal-02338959v1
Cyclic BCl3-based plasma treatments for enhancing surface quality of (010) β-Ga2O3 substrates Y. Douest,C. Mannequin,T. Ito,Y. Ozaki,C. Valleeet al. Joint Conference of XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG) and the 10th International Conference on Reactive Plasmas (ICRP-10), Jul 2019, Sapporo, Japan Communication dans un congrès hal-02338953v1
Lateral diamond Schottky diodes on heteroepitaxial substrate Juliette Letellier,Etienne Gheeraert,David Eon,Guillaume Saint-Girons,R. Bacheletet al. SBDD XXIII Hasselt Diamond Workshop, Mar 2018, Hasselt, Belgium Communication dans un congrès hal-01965380v1
Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance Cédric Masante,Khaled Driche,Thanh-Toan Pham,Hitoshi Umezawa,Gaetan Perezet al. Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France Communication dans un congrès hal-02981917v1
200V, 4MV/cm lateral diamond MOSFET Thanh-Toan Pham,Julien Pernot,C. Masante,David Eon,E. Gheeraertet al. 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩ Communication dans un congrès hal-01701734v1
Simulation numérique et caractérisation de composants de puissance en diamant Nicolas Clément, Jean-Paul Rouger,Aurélien Maréchal,Gauthier Chicot,Gaetan Perez,Thanh-Toan Phamet al. Symposium de Genie Electrique, Jun 2016, Grenoble, France Communication dans un congrès hal-01361596v1
Monolithic integration in CVD diamond: Schottky power diodes and integrated temperature sensor Nicolas Clément, Jean-Paul Rouger,David Eon,Gaëtan Perez,Pierre-Olivier Jeannin,Pierre Lefrancet al. 2016 MRS Spring Meeting and Exhibit - Diamond Power Electronic Devices symposium, Mar 2016, Phoenix, United States Communication dans un congrès hal-01306775v1
La diode Schottky en diamant : le présent et le futur David Eon,Julien Pernot,Aboulaye Traoré,Nicolas Clément, Jean-Paul Rouger,Etienne Gheeraert Symposium de Genie Electrique, Jun 2016, Grenoble, France Communication dans un congrès hal-01361578v1
Enabling high switching speed for diamond power transistors Nicolas Clément, Jean-Paul Rouger,Aurélien Maréchal,Thanh Long Le,Davy Colin,Julien Pernotet al. 3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France Communication dans un congrès hal-01176598v1
Comparison of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated boron doped diamond Aurélien Maréchal,Gauthier Chicot,Nicolas Clément, Jean-Paul Rouger,Julien Pernot,Etienne Gheeraert SBDD 2014, Feb 2014, Hasselt, Belgium Communication dans un congrès hal-00989688v1
Diamond as substrate for 3C-SiC growth: A TEM study F. Lloret,José Carlos Pinero,Daniel Araujo,M.P. Villar,Etienne Gheeraertet al. SBDD, 2014, Hasselt, Belgium Communication dans un congrès hal-01147817v1
Diamond bipolar device simulation Aurélien Maréchal,Nicolas Clément, Jean-Paul Rouger,Jean-Christophe Crébier,Julien Pernot,S. Koizumiet al. IEEE Workshop on Wide Bandgap Power Devices and Applications, Oct 2013, Columbus, United States Communication dans un congrès hal-00911320v1
Diamond power devices: status of delta-doped transistor Etienne Gheeraert,Aboulaye Traoré,Julien Pernot,Gauthier Chicot,Alexandre Fioriet al. Japanese Society of Applied Physics and Materials Research Society joint meeting, Sep 2013, Kyoto, Japan Communication dans un congrès hal-00968277v1
Models and parameters study for diamond electronic devices simulations Aurélien Maréchal,Nicolas Clément, Jean-Paul Rouger,Jean-Christophe Crébier,Julien Pernot,S. Koizumiet al. 74th Japan Society of Applied Physics Autumn Meeting. (JSAP-MRS joint symposia), Sep 2013, Kyoto, Japan Communication dans un congrès hal-00989536v1
Metal oxide semiconductor structure using oxygen-terminated diamond. Julien Pernot,Gauthier Chicot,Aurélien Maréchal,Etienne Gheeraert,Pierre Muret MRS Fall Meeting 2013 : Symposium S - Diamond Electronics and Biotechnology Fundamentals to Applications VII in Boston, US, Dec 2013, Boston, United States Communication dans un congrès hal-00993926v1
Parameter adjustement for diamond electronic devices simulation Aurélien Maréchal,Nicolas Clement,Jean-Paul Rouger,Etienne Gheeraert,Jean-Christophe Crébieret al. XVIIIth SBDD 2013, 2013, Hasselt, Belgium Communication dans un congrès hal-00989542v1
Recent progress of diamond device toward power application Julien Pernot,Gauthier Chicot,Alexandre Fiori,Aboulaye Traoré,Thu Nhi Tran Thiet al. EXMATEC 2012 : 11th Expert Evaluation and Control of Compound Semicon- ductor Materials and Technologies conference, Porquerolles Islands, France., May 2012, Porquerolles, France Communication dans un congrès hal-00994084v1
Diamond Electronic Devices Etienne Gheeraert,Aboulaye Traoré,Julien Pernot,Gauthier Chicot,Alexandre Fioriet al. International Union of Materials Research Societies - International Conference on Electronic Materials, Sep 2012, Yokohama, Japan Communication dans un congrès hal-00968270v1
Diamond delta-FET Etienne Gheeraert,Aboulaye Traoré,Julien Pernot,Alexandre Fiori,Franck Omnèset al. Materials Research Society Fall Meeting, Nov 2011, Boston, United States Communication dans un congrès hal-00968263v1
Delta doping for advanced diamond devices Etienne Gheeraert,Aboulaye Traoré,Julien Pernot,Alexandre Fiori,Franck Omnèset al. XXth International Materials Research Congress, Aug 2011, Cancun, Mexico Communication dans un congrès hal-00968256v1
Nanocrystals growth on carbon nanotubes Hasan-Al Mehedi,Etienne Gheeraert European Materials Research Society Spring Meeting, 2010, Strasbourg, France. pp.141 Communication dans un congrès hal-00968243v1
The Nickel centre in diamond Etienne Gheeraert,Amit Kumar,Laurence Magaud,Laurent Ranno,Julien Pernotet al. 21th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary Communication dans un congrès hal-00968253v1
Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators M. Benabdesselam,A. Petitfils,Frédéric Wrobel,F. Mady,S. Marciéet al. 21st Conference on Diamond, Diamond like Materials, Carbon Nanotubes and Nitrides, Sep 2010, Budapest, Hungary Communication dans un congrès hal-01307873v1
Diamond for spintronics Etienne Gheeraert NIMS-AIST joint workshop, 2009, Tsukuba, Japan Communication dans un congrès hal-00968247v1
Performance of irradiated CVD diamond micro-strip sensors W. Adam,E. Berdermann,P. Bergonzo,G. Bertuccio,F. Boganiet al. International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices 3, Jun 2000, Firenze, Italy. pp.706-712 Communication dans un congrès in2p3-00012149v1
Pulse height distribution and radiation tolerance of CVD diamond detectors W. Adam,E. Berdermann,P. Bergonzo,G. Bertuccio,F. Boganiet al. International workshop on vertex detectors 8, Jun 1999, Texel, Netherlands. pp.244-250 Communication dans un congrès in2p3-00012183v1
CVD diamond pixel detectors for LHC experiments R. Wedenig,W. Adam,C. Bauer,E. Berdermann,P. Bergonzoet al. International Conference On Advanced Technology And Particle Physics 6, Oct 1998, Villa Olmo, Italy. pp.497-504 Communication dans un congrès in2p3-00012144v1
CVD diamond detectors for ionizing radiation M. Friedl,W. Adam,C. Bauer,E. Berfermann,P. Bergonzoet al. International workshop on vertex detectors, Sep 1998, Santorini, Greece. pp.194-201 Communication dans un congrès in2p3-00012137v1
Review of the development of diamond radiation sensors W. Adam,C. Bauer,E. Berdermann,P. Bergonzo,F. Boganiet al. International Workshop on Gallium Arsenide Detectors and Related Compounds N0 6, Jun 1998, Pruhonice - Prague, Czech Republic. pp.131-145 Communication dans un congrès in2p3-00012134v1
Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC D. Meier,W. Adam,C. Bauer,E. Berdermann,P. Bergonzoet al. International conference on radiation effects on semiconductor materials, detectors and devices N0 2, Mar 1998, Florence, Italy. pp.173-180 Communication dans un congrès in2p3-00012135v1
Status of diamond particle detectors M. Krammer,W. Adam,C. Bauer,E. Berdermann,F. Boganiet al. 6th international workshop on vertex detectors, Aug 1997, Rio De Janeiro, Brazil. pp.196-202 Communication dans un congrès in2p3-00013312v1
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Development of Atomic Layer Etching (ALEt) for GaN-based materials Congying You,C. Mannequin,G. Jacopin,T. Chevolleau,C. Durandet al. International Workshop on Nitride Semiconductors, Nov 2018, Kanazawa, Japan Poster de conférence hal-02008012v1

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Power electronic devices performances based on diamond properties E. Gheeraert S. Koizumi; H. Umezawa; J. Pernot; M. Suzuki. Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing Elsevier, 2018, 978-0-08-102183-5 Chapitre d'ouvrage hal-01991092v1

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Diamond MIS Transistor Julien Pernot,Nicolas C. Rouger,David Eon,Etienne Gheeraert,Gauthier Chicotet al. United States, Patent n° : US11569381 (B2). 2023 Brevet hal-04019131v1

Pré-publication, Document de travail (1)

Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films. Etienne Bustarret,Jozef Kacmarcik,C. Marcenat,Etienne Gheeraert,Catherine Cytermannet al. 2004 Pré-publication, Document de travail hal-00002689v1