Fournel Frank Head of Bonding Process EngineeringCEA FellowHDR et Directeur de Recherche CEA

Présentation

Frank Fournel is 52 years old. He graduated from the &quot;Ecole Supérieure de Physique et de Chimie Industrielle de la ville de Paris” (ESPCI) with a master in “Materials science” (thin layer option). He got his PhD in 2001 for his work in CEA Grenoble on the use of molecular bonding to elaborate twisted substrate in order to drive a self-positioning nanostructure growth. Just after this, he has been employed by CEA in the thin film and circuit layers transfer laboratory. His main focus is on the fundamental understanding of the direct bonding and its application in thin layer transfer technique and substrate engineering. Beside this, he has been involved or driven many international project with CEA industrial partners (STmicroelectronic, Alcatel, SOITEC, Aledia, Intel,…) which gave him the advantage to drive simultaneously academic research and applicative one. He is now the head of the bonding technology engineering in LETI. He is now also involved in metallic bonding (direct, eutectic or thermo-compression), in anodic bonding and in polymer bonding (permanent or temporary) and covalent bonding (SAB). His focus concerns now also all the 3D applications including temporary bonding for instance for Si interposer or including Cu/Cu hybrid bonding for high pitch interconnexions. In addition to all the wafer to wafer bonding approaches, he also study deeply the die to wafer bonding when direct bonding is used for photonic application or 3D one. He was involved in the SOI conference board for 3 years and he is now a board member of the international ECS Wafer Bonding Symposium conference as well as the International Wafer’Bond conference and LTB-3D. He has 218 international publications, 126 deposited patents and participated to two book chapters in 2025. He passed his HDR in 2009. He has been nominated CEA Senior Expert in 2010, CEA International Expert in 2014. He his French Research director since 2021. He is CEA Fellow since 2023.

Publications

Article dans une revue (74)

Mechanisms of sodium hydroxide (NaOH)-catalyzed sealing of SiO2/SiO2 direct bonding interfaces P. Noel,F. Rieutord,V. Larrey,S. Tardif,C. Moraleset al. Journal of Applied Physics, 2025, 138, pp.055307. ⟨10.1063/5.0277335⟩ Article dans une revue cea-05206330v1
2D material fab-scale transfer of 200 mm wafer using molecular direct bonding Paul Brunet,Thibaut Meyer,Benoit Sklenard,Emmanuel Rolland,Frank Fournelet al. 2D Materials, 2025, https://doi.org/10.1088/2053-1583/addf5b. ⟨10.1088/2053-1583/addf5b⟩ Article dans une revue cea-05132070v1
Hydroxide and fluoride catalyzed bonding interface closure for low-temperature wafer bonding P. Noel,V. Larrey,S. Tardif,F. Rieutord,D. Landruet al. Japanese Journal of Applied Physics, 2025, 64 (3), pp.03SP06. ⟨10.35848/1347-4065/adb6af⟩ Article dans une revue cea-04991363v1
Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization L. Patout,C. Alfonso,M. Descoins,F. Fournel,D. Mangelincket al. Materials Science in Semiconductor Processing, 2024, 184, pp.108814. ⟨10.1016/j.mssp.2024.108814⟩ Article dans une revue cea-04765424v1
Modulation of post-fracture roughness with induced shear stress in the smart cut process Lucas Colonel,Q. Lomonaco,K. Abadie,L G Michaud,C. Moraleset al. Journal of Applied Physics, 2024, 136 (4), ⟨10.1063/5.0223114⟩ Article dans une revue cea-04767394v1
A nanofluidic exchanger for harvesting saline gradient energy Saranath Sripriya,Cyril Picard,Vincent Larrey,Frank Fournel,Elisabeth Charlaix Lab on a Chip, 2024, ⟨10.1039/d4lc00544a⟩ Article dans une revue hal-04768354v1
Light emission from ion-implanted SiGe quantum dots grown on Si substrates L. Spindlberger,J. Aberl,L. Vukušić,T. Fromherz,J.-M. Hartmannet al. Materials Science in Semiconductor Processing, 2024, 181, pp.108616. ⟨10.1016/j.mssp.2024.108616⟩ Article dans une revue cea-04771112v1
Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle : a TEM characterization Loïc Patout,Claude Alfonso,Marion Descoins,Frank Fournel,Dominique Mangelincket al. Materials Science in Semiconductor Processing, 2024, 184 Article dans une revue hal-04683755v1
Large-scale controlled coupling of single-photon emitters to high-index dielectric nanoantennas by AFM nanoxerography Mélodie Humbert,Romain Hernandez,Nicolas Mallet,Guilhem Larrieu,Vincent Larreyet al. Nanoscale, 2023, 15 (2), pp.599-608. ⟨10.1039/d2nr05526k⟩ Article dans une revue hal-04158706v1
SAB-enabled room temperature hybrid bonding Pablo Renaud,Karine Abadie,Frank Fournel,Christophe Dubarry,Floriane Baudinet al. ECS Transactions, 2023, 112 (3), pp.83-94. ⟨10.1149/11203.0083ecst⟩ Article dans une revue hal-04608606v1
Stress Engineering in Germanium-Silicon Heterostructure Using Surface Activated Hot Bonding Quentin Lomonaco,Karine Abadie,Christophe Morales,Laurent Gaëtan Michaud,Jérôme Richyet al. ECS Transactions, 2022, 109 (4), pp.277-287. ⟨10.1149/10904.0277ecst⟩ Article dans une revue cea-04521825v1
Large scale integration of functional radio‐frequency flexible MEMS under large mechanical strain Edy Azrak,Laurent Michaud,Jérôme Richy,Alexandre Reinhardt,Samuel Tardifet al. Advanced Functional Materials, 2022, 2022, pp.2205404. ⟨10.1002/adfm.202205404⟩ Article dans une revue hal-03883016v1
Tailoring wavelength and emitter-orientation dependent propagation of single photons in silicon nanowires Mélodie Humbert,Peter Wiecha,Gérard Colas Des Francs,Xiao Yu,Nicolas Malletet al. Physical Review Applied, 2022, 17 (1), pp.014008. ⟨10.1103/PhysRevApplied.17.014008⟩ Article dans une revue hal-03611963v1
Direct bonding, key enabler for 3D technologies Emilie Bourjot,Frank Fournel https://chipscalereview.com/wp-content/uploads/2022/09/ChipScale_Sep-Oct_2022-digital.pdf, 2022, 26 (5), pp.6 Article dans une revue cea-04680083v1
Double cantilever beam bonding energy measurement using confocal IR microscopy L. Colonel,A. Calvez,F. Fournel,V. Larrey,S. Moreauet al. Journal of Applied Physics, 2022, 132 (21), ⟨10.1063/5.0114668⟩ Article dans une revue cea-04521812v1
AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth Claire Besancon,Delphine Néel,Dalila Make,Joan Manel Ramírez,Giancarlo Ceruloet al. Applied Sciences, 2022, 12 (1), pp.263. ⟨10.3390/app12010263⟩ Article dans une revue hal-03867618v1
Transfer of an ultrathin single crystal silicon film from a Silicon On Insulator to a polymer L.G. Michaud,E. Azrak,C. Castan,F. Fournel,F. Rieutordet al. Materials Today Nano, 2021, 13, pp.100107. ⟨10.1016/j.mtnano.2020.100107⟩ Article dans une revue cea-03096669v1
Advanced hydrogenation process applied on Ge on Si quantum dots for enhanced light emission Lukas Spindlberger,Moonyong Kim,Johannes Aberl,Thomas Fromherz,Friedrich Schäffleret al. Applied Physics Letters, 2021, 118 (8), pp.083104. ⟨10.1063/5.0036039⟩ Article dans une revue hal-04836721v1
Aluminium-nitride thin-films on polymer substrates obtained by adhesive bonding Edy Azrak,Laurent Michaud,Alexandre Reinhardt,Samuel Tardif,Marie Bousquetet al. ECS Journal of Solid State Science and Technology, 2021, Focus Issue on Semiconductor Wafer Bonding: Science, Technology, and Applications, 10 (6), pp.064001. ⟨10.1149/2162-8777/ac04ff⟩ Article dans une revue hal-03264152v1
Impact of amino-alcohol organic molecule on various silicon oxide bondings A. Calvez,F. Fournel,V. Larrey,G. Eleouet,C. Moraleset al. ECS Journal of Solid State Science and Technology, 2021, 10 (6), pp.064005. ⟨10.1149/2162-8777/ac08d7⟩ Article dans une revue cea-04916731v1
Impact of the temperature process on the morphology of 3D temporary bonded wafers: Quantification and reducing of the effect P. Montméat,M. Le Cocq,T. Enot,M. Zussy,F. Fournel Materials Science in Semiconductor Processing, 2021, 136, pp.106156. ⟨10.1016/j.mssp.2021.106156⟩ Article dans une revue cea-04917047v1
Temporary polymer bonding for the manufacturing of thin wafers: An innovative low temperature process P. Montméat,L. Bally,J. Dechamp,T. Enot,F. Fournel Materials Science in Semiconductor Processing, 2021, 123, pp.105550 -. ⟨10.1016/j.mssp.2020.105550⟩ Article dans une revue hal-03492895v1
Elaboration and characterization of a 200 mm stretchable and flexible ultra-thin semi-conductor film Laurent Michaud,Clément Castan,Marc Zussy,Pierre Montméat,Vincent H Mareauet al. Nanotechnology, 2020, 31 (14), pp.145302. ⟨10.1088/1361-6528/ab647a⟩ Article dans une revue cea-02534522v1
Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate C Besancon,F. Fournel,L Sanchez,N. Vaissiere,C. Dupreet al. Nanotechnology, 2020, 31 (13), pp.135205. ⟨10.1088/1361-6528/ab5ce5⟩ Article dans une revue hal-02917600v1
Impact of an Amino-Alcohol Organic Molecule on SiO 2 and Si Bonding Energy Frank Fournel,Aziliz Calvez,Vincent Larrey,Gaëlle Eleouet,Christophe Moraleset al. ECS Transactions, 2020, 98 (4), pp.3-9. ⟨10.1149/09804.0003ecst⟩ Article dans une revue cea-04922835v1
Comparison of AlGaInAs-Based Laser Behavior Grown on Hybrid InP-SiO₂/Si and InP Substrates Claire Besancon,Giancarlo Cerulo,Delphine Néel,Nicolas Vaissière,Dalila Makeet al. IEEE Photonics Technology Letters, 2020, 32 (8), pp.469-472. ⟨10.1109/LPT.2020.2979254⟩ Article dans une revue hal-02917586v1
Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas Jean-Marie Poumirol,Ioannis Paradisanos,Shivangi Shree,Gonzague Agez,Xavier Marieet al. ACS photonics, 2020, 7 (11), pp.3106-3115. ⟨10.1021/acsphotonics.0c01175⟩ Article dans une revue hal-03075337v1
Measuring the surface bonding energy: A comparison between the classical double-cantilever beam experiment and its nanoscale analog K. Pantzas,F. Fournel,A. Talneau,G. Patriarche,Éric Le Bourhis AIP Advances, 2020, 10 (4), pp.045006. ⟨10.1063/1.5143843⟩ Article dans une revue hal-03030828v1
SiO2-SiO2 die-to-wafer direct bonding interface weakening Toshiyuki Tabata,Loic Sanchez,Vincent Larrey,Frank Fournel,Hubert Moriceau Microelectronics Reliability, 2020, 107, pp.113589. ⟨10.1016/j.microrel.2020.113589⟩ Article dans une revue cea-04947360v1
Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking L. Arnaud,C. Karam,N. Bresson,C. Dubarry,S. Borelet al. MRS Communications, 2020, 10 (4), pp.549-557. ⟨10.1557/mrc.2020.77⟩ Article dans une revue cea-04937828v1
FIVHeMA: Intraventricular fibrinolysis versus external ventricular drainage alone in aneurysmal subarachnoid hemorrhage: A randomized controlled trial T. Gaberel,C. Gakuba,F. Fournel,E. Le Blanc,C. Gaillardet al. Neurochirurgie, 2019, 65 (1), pp.14-19. ⟨10.1016/j.neuchi.2018.11.004⟩ Article dans une revue hal-02154104v1
Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO 2 /Si Substrate Claire Besancon,Nicolas Vaissière,Cecilia Dupre,Frank Fournel,Loic Sanchezet al. Physica Status Solidi A (applications and materials science), 2019, 217 (3), pp.1900523. ⟨10.1002/pssa.201900523⟩ Article dans une revue hal-02917597v1
Transient current technique for charged traps detection in silicon bonded interfaces J. Bronuzzi,D. Bouvet,C. Charrier,F. Fournel,M. F. Garciaet al. AIP Advances, 2019, 9 (2), pp.025307. ⟨10.1063/1.5079999⟩ Article dans une revue cea-02186439v1
Application of temporary adherence to improve the manufacturing of 3D thin silicon wafers K. Abadie,P. Montmeat,T. Enot,F. Fournel,M. Wimplinger International Journal of Adhesion and Adhesives, 2019, 91, pp.123-130. ⟨10.1016/j.ijadhadh.2019.03.009⟩ Article dans une revue cea-02186447v1
Polymer bonding temperature impact on bonded stack morphology and adherence energy P. Montmeat,T. Enot,G. Louro de Oliveira,F. Fournel Microsystem Technologies, 2018, 24 (1), pp.793-799. ⟨10.1007/s00542-017-3519-1⟩ Article dans une revue cea-02186140v1
A direct sensor to measure minute liquid flow rates Preeti Sharma,Jean-François Motte,Frank Fournel,Benjamin Cross,Elisabeth Charlaixet al. Nano Letters, 2018, 18 (9), pp.5726-5730. ⟨10.1021/acs.nanolett.8b02332⟩ Article dans une revue hal-02001168v1
Influence of water diffusion in deposited silicon oxides on direct bonding of hydrophilic surfaces J. Desomberg,Frank Fournel,Hubert Moriceau,A. Roule,E. Barthelet al. Microsystem Technologies, 2018, 24 (1), pp.801-808. ⟨10.1007/s00542-017-3527-1⟩ Article dans une revue hal-01821482v1
Development and adhesion characterization of a silicon wafer for temporary bonding P. Montmeat,T. Enot,G. Enyedi,M. Pellat,J. Thooriset al. International Journal of Adhesion and Adhesives, 2018, 82, pp.100-107. ⟨10.1016/j.ijadhadh.2018.01.007⟩ Article dans une revue istex cea-02186238v1
Strongly Directional Scattering from Dielectric Nanowires Peter Wiecha,Aurelien Cuche,Arnaud Arbouet,Christian Girard,Gérard Colas Des Francset al. ACS photonics, 2017, 4 (8), pp.2036 - 2046. ⟨10.1021/acsphotonics.7b00423⟩ Article dans une revue hal-01730478v1
Manufacturing and characterization of III-V on silicon multijunction solar cells Elias Veinberg-Vidal,Cécilia Dupré,Pablo Garcia-Linares,Christophe Jany,Romain Thibonet al. Energy Procedia, 2016, 92, pp.242 - 247. ⟨10.1016/j.egypro.2016.07.066⟩ Article dans une revue hal-05550620v1
InGaAs-OI Substrate Fabrication on a 300 mm Wafer A. Lecestre,N. Mallet,G. Larrieu,Sebastien Sollier,Julie Widiezet al. Journal of Low Power Electronics and Applications, 2016, 6 (4), pp.19. ⟨10.3390/jlpea6040019⟩ Article dans une revue hal-01991855v1
Interface water diffusion in silicon direct bonding M. Tedjini,Frank Fournel,Hubert Moriceau,V. Larrey,Didier Landruet al. Applied Physics Letters, 2016, 109 (11), pp.111603. ⟨10.1063/1.4962464⟩ Article dans une revue cea-01851936v1
Water Stress Corrosion in Bonded Structures F. Fournel,C. Martin-Cocher,D. Radisson,V. Larrey,E. Becheet al. ECS Journal of Solid State Science and Technology, 2015, 4 (5), pp.P124-P130. ⟨10.1149/2.0031505jss⟩ Article dans une revue hal-02016558v1
Direct Bonding Mechanism of ALD-Al 2 O 3 Thin Films E. Beche,F. Fournel,V. Larrey,F. Rieutord,C. Moraleset al. ECS Journal of Solid State Science and Technology, 2015, 4 (5), pp.P171-P175 Article dans une revue hal-02016525v1
Mechanism involved in direct hydrophobic Si(100)-2x1:H bonding C. Rauer,Hubert Moriceau,François Rieutord,Jean-Michel Hartmann,Frank Fournelet al. Microsystem Technologies, 2015, 21 (5), pp.961-968. ⟨10.1007/s00542-015-2443-5⟩ Article dans une revue hal-01616552v1
Effect of Copper–Copper Direct Bonding on Voiding in Metal Thin Films P. Gondcharton,B. Imbert,L. Benaissa,F. Fournel,M. Verdier Journal of Electronic Materials, 2015, 44 (11), pp.4128-4133. ⟨10.1007/s11664-015-3992-1⟩ Article dans une revue hal-01263546v1
Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films Elodie Beche,Frank Fournel,Vincent Larrey,François Rieutord,F. Fillot Microsystem Technologies, 2015, 21 (5), pp.953-959. ⟨10.1007/s00542-015-2437-3⟩ Article dans une revue hal-01586120v1
Nature of Tunable Hole g Factors in Quantum Dots N. Ares,V. N. Golovach,G. Katsaros,Mathieu Stoffel,F. Fournelet al. Physical Review Letters, 2013, 110 (4), ⟨10.1103/PhysRevLett.110.046602⟩ Article dans une revue hal-01285177v1
Observation of Spin-Selective Tunneling in SiGe Nanocrystals G. Katsaros,Vitaly N. Golovach,Panayotis Spathis,Natalia Ares,M. Stoffelet al. Physical Review Letters, 2011, 107 (24), pp.246601. ⟨10.1103/PhysRevLett.107.246601⟩ Article dans une revue hal-00984199v1
The angular dislocation parallel to a free surface. Application to a (111)Si low angle twist boundary Salem Neily,Sami Youssef,Frank Fournel,R. Bonnet Philosophical Magazine, 2011, 91 (31), pp.1. ⟨10.1080/14786435.2011.600734⟩ Article dans une revue hal-00723598v1
Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon G. Katsaros,Panayotis Spathis,M. Stoffel,F. Fournel,M. Mongilloet al. Nature Nanotechnology, 2010, 5, pp.458-464. ⟨10.1038/nnano.2010.84⟩ Article dans une revue hal-00700017v1
Alternate dissociation of the screw dislocations in a (001) buried small-angle twist boundary in silicon R. Bonnet,M. Loubradou,S. Youssef,J.L. Rouvière,F. Fournel Philosophical Magazine, 2009, 89 (5), pp.413-434 Article dans une revue hal-00389424v1
Mechanism of Thermal Silicon Oxide Direct Wafer Bonding C. Ventosa,C. Morales,L. Libralesso,F. Fournel,A. Paponet al. Electrochemical and Solid-State Letters, 2009, 12 (10), pp.H373. ⟨10.1149/1.3193533⟩ Article dans une revue hal-04526268v1
Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) nMOSFETs F. Andrieu,T. Ernst,O. Faynot,O. Rozeau,Y. Bogumilowiczet al. Solid-State Electronics, 2006, 50, pp.566 Article dans une revue hal-00145116v1
Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study A. Pascale,P. Gentile,J. Eymery,J. Meziere,A. Bavardet al. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2006, 600 (16), pp.3187 - 3193. ⟨10.1016/j.susc.2006.06.004⟩ Article dans une revue istex hal-01876867v1
Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) MOSFETs F. Andrieu,T. Ernst,O. Faynot,O. Rozeau,Y. Bogumilowiczet al. Solid-State Electronics, 2006, 50, pp.566 Article dans une revue hal-00145501v1
Controlled Ge quantum dots positioning with nano-patterned Si(001) substrates A. Bavard,J. Eymery,A. Pascale,F. Fournel physica status solidi (b), 2006, 243 (15), pp.3963 - 3967. ⟨10.1002/pssb.200671533⟩ Article dans une revue istex hal-01875054v1
Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements C. Gallon,C. Fenouillet-Beranger,N. Bresson,Sorin Cristoloveanu,Michel Allibertet al. Microelectronic Engineering, 2005, 80, pp. 241-244. ⟨10.1016/j.mee.2005.04.074⟩ Article dans une revue istex hal-00417214v1
Electronic and optical properties of Si ∕ Si O 2 nanostructures. I. Electron-hole collective processes in single Si ∕ Si O 2 quantum wells N. Pauc,V. Calvo,J. Eymery,F. Fournel,N. Magnea Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (20), ⟨10.1103/PhysRevB.72.205324⟩ Article dans une revue hal-02060353v1
Photoluminescence of nanometric single silicon quantum wells J. Eymery,N. Pauc,V. Calvo,F. Fournel,N. Magnea Optical Materials, 2005, 27 (5), pp.1000 - 1003. ⟨10.1016/j.optmat.2004.08.052⟩ Article dans une revue istex hal-01875076v1
Germanium growth on nanopatterned surface studied by STM P. Gentile,J. Eymery,F. Leroy,F. Fournel,J. Meziereet al. Journal of Crystal Growth, 2005, 275 (1-2), pp.e1609 - e1613. ⟨10.1016/j.jcrysgro.2004.11.177⟩ Article dans une revue istex hal-01875068v1
Electron hole liquid in silicon single quantum wells N. Pauc,V. Calvo,J. Eymery,F. Fournel,N. Magnea Optical Materials, 2005, 27 (5), pp.995 - 999. ⟨10.1016/j.optmat.2004.08.051⟩ Article dans une revue istex hal-01875073v1
Two-Dimensional Electron-Hole Liquid in Single Si Quantum Wells with Large Electronic and Dielectric Confinement N. Pauc,V. Calvo,J. Eymery,F. Fournel,N. Magnea Physical Review Letters, 2004, 92 (23), ⟨10.1103/PhysRevLett.92.236802⟩ Article dans une revue hal-02060361v1
Engineering strained silicon on insulator wafers with the Smart CutTM technology B. Ghyselen,J.-M. Hartmann,T. Ernst,C. Aulnette,B. Osternaudet al. Solid-State Electronics, 2004, 48 (8), pp.1285-1296. ⟨10.1016/j.sse.2004.01.011⟩ Article dans une revue istex hal-04175606v1
Controlled surface nanopatterning with buried dislocation arrays F. Leroy,J. Eymery,P. Gentile,F. Fournel Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2003, 545 (3), pp.211 - 219. ⟨10.1016/j.susc.2003.08.051⟩ Article dans une revue istex hal-01876866v1
Grazing incidence x-ray scattering investigation of Si surface patterned with buried dislocation networks F. Leroy,J. Eymery,D. Buttard,G. Renaud,R. Lazzariet al. Applied Physics Letters, 2003, 82 (16), pp.2598 - 2600. ⟨10.1063/1.1568545⟩ Article dans une revue hal-01442883v1
GIXRD of nanoscale strain patterning in wafer bonding J. Eymery,F. Leroy,F. Fournel Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003, 200, pp.73 - 78. ⟨10.1016/S0168-583X(02)01677-4⟩ Article dans une revue istex hal-01876871v1
Ordering of Ge quantum dots with buried Si dislocation networks F. Leroy,J. Eymery,P. Gentile,F. Fournel Applied Physics Letters, 2002, 80 (17), pp.3078-3080 Article dans une revue cea-01989695v1
X-ray reflectivity of silicon on insulator wafers J. Eymery,F. Rieutord,F. Fournel,D. Buttard,H. Moriceau Materials Science in Semiconductor Processing, 2001, 4 (1-3), pp.31 - 33. ⟨10.1016/S1369-8001(00)00158-X⟩ Article dans une revue istex hal-01876885v1
Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates D. Sotta,V. Calvo,H. Ulmer-Tuffigo,N. Magnea,Emmanuel Hadjiet al. Materials Science and Engineering: B, 2001, 81 (1-3), pp.43-45 Article dans une revue cea-01996944v1
Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces D. Buttard,J. Eymery,F. Rieutord,F. Fournel,D Lübbertet al. Physica B: Condensed Matter, 2000, 283 (1-3), pp.103 - 107. ⟨10.1016/S0921-4526(99)01900-6⟩ Article dans une revue istex hal-01876872v1
Ultra thin silicon films directly bonded onto silicon wafers F. Fournel,H. Moriceau,N. Magnea,J. Eymery,J.L Rouvièreet al. Materials Science and Engineering: B, 2000, 73 (1-3), pp.42 - 46. ⟨10.1016/S0921-5107(99)00431-6⟩ Article dans une revue istex hal-01876883v1
Nanometric patterning with ultrathin twist bonded silicon wafers F. Fournel,H. Moriceau,N. Magnea,J. Eymery,B Buttardet al. Thin Solid Films, 2000, 380 (1-2), pp.10 - 14. ⟨10.1016/S0040-6090(00)01460-7⟩ Article dans une revue istex hal-01876895v1
Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces D. Buttard,J. Eymery,F. Rieutord,F. Fournel,D Lübbertet al. Physica B: Condensed Matter, 2000, 283 (1-3), pp.103 - 107. ⟨10.1016/S0921-4526(99)01900-6⟩ Article dans une revue istex hal-01876874v1

Communication dans un congrès (45)

Fine pitch Nb-Nb Direct Bonding for quantum applications Pablo Renaud,Christophe Dubarry,Nicolas Bresson,Edouard Deschaseaux,Frank Fournelet al. 2024 IEEE 74th Electronic Components and Technology Conference (ECTC), May 2024, Denver, United States. pp.441-446, ⟨10.1109/ECTC51529.2024.00076⟩ Communication dans un congrès cea-04758586v1
Characterization and mitigation of local wafer deformations introduced by direct wafer-to-wafer bonding Richard van Haren,Suwen Li,Mart Baars,Blandine Minghetti,Leon van Dijket al. Novel Patterning Technologies 2024, Feb 2024, San Jose, United States. pp.1295606, ⟨10.1117/12.3010477⟩ Communication dans un congrès cea-04769554v1
Towards 200 mm 2D materials transfer: Wafer scale characterizations during 2D materials transfer onto temporary substrate. Paul Brunet,Thibaut Meyer,Emmanuel Rolland,Benjamin Dey,Stephane Cadotet al. 2024 MRS Fall Meeting, Dec 2024, BOSTON, United States Communication dans un congrès cea-04768415v1
Ultra low temperature hybrid bonding: morphological and electrical characterizations Margot Faure,Christophe Dubarry,Pablo Renaud,Floriane Baudin,Sébastien Dominguezet al. 2024 IEEE 10th Electronics System-Integration Technology Conference (ESTC), Sep 2024, Berlin, Germany. ⟨10.1109/ESTC60143.2024.10712151⟩ Communication dans un congrès cea-04924735v1
Copper Microstructure Optimization for Fine Pitch Low Temperature Cu/SiO 2 Hybrid Bonding Marie Maubert,Mathilde Gottardi,Pierre-Emile Philip,Emilie Fragnaud,Gilles Romeroet al. 2024 IEEE 74th Electronic Components and Technology Conference (ECTC), May 2024, Denver, United States. pp.631-636, ⟨10.1109/ECTC51529.2024.00105⟩ Communication dans un congrès cea-04758477v1
Integration and process challenges of self assembly applied to die-to-wafer hybrid bonding Emilie Bourjot,Alice Bond,Noura Nadi,Thierry Enot,Loic Sanchezet al. ECTC 2023 - IEEE 73rd Electronic Components and Technology Conference, May 2023, Orlando, United States. pp.1397-1402, ⟨10.1109/ECTC51909.2023.00239⟩ Communication dans un congrès hal-04757847v1
3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel T. Mota-Frutuoso,Valerie Lapras,Laurent Brunet,L. Basset,J. Lugoet al. IEDM 2023 - IEEE International Electron Devices Meeting, Dec 2023, San Francisco, United States. ⟨10.1109/IEDM45741.2023.10413864⟩ Communication dans un congrès cea-04540443v1
Enabling layer transfer and back-side power delivery network applications by wafer bonding and scanner correction optimizations Richard van Haren,Suwen Li,Blandine Minghetti,Leon van Dijk,Klaas Brantjeset al. Metrology, Inspection, and Process Control XXXVII, Feb 2023, San Jose, United States. pp.76, ⟨10.1117/12.2657422⟩ Communication dans un congrès cea-04755920v1
Large Diameter Epi-Ready InP on Si (InPOSi) Substrates B. Ghyselen,Fx Darras,O. Mourey,C. Navone,L. Sanchezet al. International Conference on Compound Semiconductor Manufacturing Technology, May 2023, Orlando, United States Communication dans un congrès hal-04624561v1
Stressed Si/Si homo-structures manufacturing using surface activated bonding in temperature Karine Abadie,Quentin Lomonaco,Laurent Michaud,Lucas Colonel,Christophe Moraleset al. WaferBond’22 - The International Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration, Oct 2022, Schmalkalden, Germany Communication dans un congrès cea-04613733v1
10 μm and 5 μm Die-to-Wafer Direct Hybrid Bonding Emilie Bourjot,Alice Bond,Carine Ladner,Nicolas Bresson,Stephane Moreauet al. 2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC), Sep 2022, Sibiu, Romania. pp.31-38, ⟨10.1109/ESTC55720.2022.9939476⟩ Communication dans un congrès cea-04521796v1
Caractérisation acoustique de l’énergie de collage direct Amine Iklil,Gilles Despaux,Frank Fournel,Emilie Deloffre,Emmanuel Le Clézio 16ème Congrès Français d'Acoustique, CFA2022, Société Française d'Acoustique; Laboratoire de Mécanique et d'Acoustique, Apr 2022, Marseille, France Communication dans un congrès hal-03848159v1
AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth Claire Besancon,Nicolas Vaissiere,Delphine Neel,Hussein Mehdi,Gauthier Lefevreet al. 2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930433⟩ Communication dans un congrès hal-04627233v1
Engineered SiC materials for power technologies Walter Schwarzenbach,Séverin Rouchier,Guillaume Berre,Romain Boulet,Olivier Ledouxet al. ICICDT 2022 - 2022 International Conference on IC Design and Technology, Sep 2022, Hanoi, Vietnam. pp.55-56, ⟨10.1109/ICICDT56182.2022.9933092⟩ Communication dans un congrès cea-04528483v1
Transfer of an AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bonding Victor Hui,Agathe André,Alexandre Arnoult,Pascal Besson,Christophe Dubarryet al. Optics and Photonics for Advanced Dimensional Metrology II, Apr 2022, Strasbourg, France. pp.20, ⟨10.1117/12.2621898⟩ Communication dans un congrès cea-04793515v1
Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer C. Besancon,P. Fanneau,D. Neel,G. Cerulo,N. Vaissiereet al. 2020 European Conference on Optical Communications (ECOC), Dec 2020, Brussels, Belgium. pp.1-4, ⟨10.1109/ECOC48923.2020.9333230⟩ Communication dans un congrès hal-04627280v1
Towards $5\mu \mathrm{m}$ interconnection pitch with Die-to-Wafer direct hybrid bonding Emilie Bourjot,Clement Castan,Noura Nadi,Alice Bond,Nicolas Bressonet al. 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), Jun 2021, San Diego, United States. pp.470-475, ⟨10.1109/ECTC32696.2021.00085⟩ Communication dans un congrès cea-04951727v1
Opportunities and challenges brought by 3D-sequential integration Christoforos Theodorou,P. Batude,L. Brunet,C. Fenouillet-Beranger,D. Lattardet al. 2021 IEEE International Interconnect Technology Conference (IITC), Jul 2021, Kyoto, France. pp.1-1, ⟨10.1109/IITC51362.2021.9537356⟩ Communication dans un congrès hal-03434018v1
Die to Wafer Direct Hybid Bonding Demonstration with High Alignment Accuracy and Electrical Yields A. Jouve,L. Sanchez,C. Castan,N. Bresson,F. Fournelet al. 2019 International 3D Systems Integration Conference (3DIC), Oct 2019, Sendai, Japan. pp.1-7, ⟨10.1109/3DIC48104.2019.9058905⟩ Communication dans un congrès cea-04777615v1
A reliable copper-free wafer level hybrid bonding technology for high-performance medical imaging sensors A. Jouve,E. Lagoutte,R. Crochemore,G. Mauguen,T. Flahautet al. 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), Jun 2020, Orlando, United States. pp.201-209, ⟨10.1109/ECTC32862.2020.00044⟩ Communication dans un congrès cea-04924159v1
High temperature sealing of silicon oxide/oxide bonding interfaces François Rieutord,S. Tardif,Frank Fournel,Vincent Larrey,Didier Landruet al. PRiME 2020, Oct 2020, Online, United States. pp.1627-1627, ⟨10.1149/MA2020-02221627mtgabs⟩ Communication dans un congrès cea-03096019v1
Towards a Complete Direct Hybrid Bonding D2W Integration Flow: Known-Good-Dies and Die Planarization Modules Development E. Bourjot,P. Stewart,C. Dubarry,E. Lagoutte,E. Rollandet al. 2019 International 3D Systems Integration Conference (3DIC), Oct 2019, Sendai, Japan. pp.1-5, ⟨10.1109/3DIC48104.2019.9058783⟩ Communication dans un congrès cea-04776545v1
Highly Strained Silicon on Polymer Obtained By Temporary Polymer Wafer Bonding Laurent Gaëtan Michaud,Clément Castan,Pierre Montméat,Edy Azrak,Nikita Nikitskiyet al. PRiME 2020, Oct 2020, Online, United States. pp.1618-1618, ⟨10.1149/MA2020-02221618mtgabs⟩ Communication dans un congrès cea-03096035v1
Die-to-Wafer 3D Interconnections Operating at Sub-Kelvin Temperatures for Quantum Computation Candice Thomas,Jean Charbonnier,Arnaud Garnier,Nicolas Bresson,Frank Fournelet al. 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), Sep 2020, Tønsberg, Norway. pp.1-7, ⟨10.1109/ESTC48849.2020.9229657⟩ Communication dans un congrès hal-03455251v1
Robustness and reliability achievements for direct hybrid bonding integration: a review S. Moreau,J. Jourdon,S. Lhostis,D. Bouchu,Y. Henrionet al. 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), May 2019, Kanazawa, Japan. pp.11-11, ⟨10.23919/LTB-3D.2019.8735353⟩ Communication dans un congrès cea-04521620v1
Breakthroughs in 3D Sequential technology L. Brunet,C. Fenouillet-Beranger,P. Batude,S. Beaurepaire,F. Ponthenieret al. 2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2018.8614653⟩ Communication dans un congrès cea-04808833v1
High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate Claire Besancon,Jean Decobert,Jean-Pierre Le Goec,Nicolas Vaissière,Cecilia Dupreet al. 2019 Compound Semiconductor Week (CSW), May 2019, Nara, Japan. pp.1-2, ⟨10.1109/ICIPRM.2019.8818994⟩ Communication dans un congrès hal-02330625v1
Die to wafer direct bonding: from fundamental mechanisms to optoelectronic and 3D applications F. Fournel,L. Sanchez,B. Montmayeul,C. Castan,M. Laugieret al. 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), May 2019, Kanazawa, Japan. pp.16-16, ⟨10.23919/LTB-3D.2019.8735248⟩ Communication dans un congrès cea-04790247v1
Self-Assembly Process for 3D Die-to-Wafer using Direct Bonding: A Step Forward Toward Process Automatisation Jouve Amandine,Loic Sanchez,Clement Castan,Maxence Laugier,Emmanuel Rollandet al. 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), May 2019, Las Vegas, United States. pp.225-234, ⟨10.1109/ECTC.2019.00041⟩ Communication dans un congrès cea-04783270v1
(Invited) Water Transport Along Si/Si Direct Wafer Bonding Interfaces François Rieutord,Samuel Tardif,Ivan Nikitskiy,Frank Fournel,Marwan Tedjiniet al. AIMES 2018, Electrochemical Society ECS, Sep 2018, CANCUN, Mexico. pp.39-47, ⟨10.1149/08605.0039ecst⟩ Communication dans un congrès hal-02005572v1
A sensor to measure flow rate in individual nanopore Preeti Sharma,Jean-François Motte,Frank Fournel,Benjamin Cross,Élisabeth Charlaixet al. Journées de la matière condensée, Aug 2018, Grenoble, France Communication dans un congrès hal-02017568v1
Wafer-Bonded AlGaAs///Si Dual-Junction Solar Cells Elias Veinberg-Vidal,Laura Vauche,Clément Weick,Jeremy da Fonseca,Christophe Janyet al. 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), Jun 2017, Washington, United States. pp.2562-2565, ⟨10.1109/PVSC.2017.8366116⟩ Communication dans un congrès hal-02042351v1
1μm Pitch direct hybrid bonding with &lt;300nm wafer-to-wafer overlay accuracy A. Jouve,V. Balan,N. Bresson,C. Euvrard-Colnat,F. Fournelet al. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, Canada. pp.1-2, ⟨10.1109/S3S.2017.8309213⟩ Communication dans un congrès cea-02185349v1
Strongly directional scattering from dielectric nanowires Vincent Paillard,Peter Wiecha,Arnaud Arbouet,Aurelien Cuche,Christian Girardet al. META 2017, Symp. 14 "Fano resonances in optics and microwaves, Jul 2017, Incheon- Seoul, South Korea Communication dans un congrès hal-01768972v1
Adhesion Energy and Bonding Wave Velocity Measurements V. Larrey,G. Mauguen,F. Fournel,D. Radisson,F. Rieutordet al. PRIME 2016, Oct 2016, Honolulu, United States. pp.145-152, ⟨10.1149/07509.0145ecst⟩ Communication dans un congrès hal-01974477v1
Transfer of Ultra-Thin Semi-Conductor Films onto Flexible Substrates P. Montméat,I. de Nigris Brandolisi,S. Tardif,T. Enot,G. Enyediet al. PRiME 2016/230th ECS Meeting, Electrochemical Society, Oct 2016, Honolulu, United States. pp.247-252, ⟨10.1149/07509.0247ecst⟩ Communication dans un congrès hal-02016097v1
Linear and nonlinear light scattering properties of individual silicon nanowires. Vincent Paillard,Peter Wiecha,Arnaud Arbouet,Christian Girard,Thierry Baronet al. 6th Int. Conf. on Nanostructures and Nanomaterials Self-Assembly (nanosea 2016), Jul 2016, Giardini Naxos, Italy Communication dans un congrès hal-01768994v1
Linear and nonlinear optical properties properties of individual silicon nanowires. Vincent Paillard,Peter Wiecha,Arnaud Arbouet,Christian Girard,Aurélie Lecestreet al. ECS Meeting, nanoscale luminescent materials, May 2016, San Diego, United States Communication dans un congrès hal-01769024v1
Edge Water Penetration in Direct Bonding Interface F. Rieutord,S. Tardif,D. Landru,O. Kononchuk,V. Larreyet al. PRiME 2016/230th ECS Meeting, Electrochemical Society, Oct 2016, Honolulu, United States. pp.163-167, ⟨10.1149/07509.0163ecst⟩ Communication dans un congrès hal-02016077v1
Impact of Water Edge Absorption on Silicon Oxide Direct Bonding Energy F. Fournel,M. Tedjini,V. Larrey,F. Rieutord,C. Moraleset al. PRIME 2016, Oct 2016, Honolulu, United States. pp.129-134, ⟨10.1149/07509.0129ecst⟩ Communication dans un congrès hal-01974475v1
3DVLSI with CoolCube process: An alternative path to scaling P. Batude,C. Fenouillet-Beranger,L. Pasini,V. Lu,F. Depratet al. 2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T48-T49, ⟨10.1109/VLSIT.2015.7223698⟩ Communication dans un congrès hal-02049760v1
Direct Bonding Mechanism of ALD-Al2O3 Thin Films E. Beche,F. Fournel,V. Larrey,F. Rieutord,C. Moraleset al. 13th International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, ECS, Oct 2014, Cancun, Mexico. pp.57-65, ⟨10.1149/06405.0057ecst⟩ Communication dans un congrès hal-02015924v1
(Invited) Water Stress Corrosion in Bonded Structures F. Fournel,C. Martin-Cocher,D. Radisson,V. Larrey,E. Becheet al. 13th International Symposium on Semiconductor Wafer Bonding - Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, Oct 2014, Cancun, Mexico. pp.121-132 Communication dans un congrès hal-02015940v1
In-Depth Study of Strained SGOI nMOSFETs down to 30nm Gate Length F. Andrieu,T. Ernst,O. Faynot,O. Rozeau,Y. Bogumilowiczet al. 35st European Solid-State Device Research Conference, 2005, Grenoble, France Communication dans un congrès hal-00146508v1
Elaboration de Nanocristaux Silicium, propriétés électriques et optiques T. Baron,F. Mazen,A. Souifi,P. Gentile,F. Fournelet al. VIIIème Journées de la Matière Condensée, 2002, Marseille, France Communication dans un congrès hal-00486149v1

Poster de conférence (1)

Buffer-free GaN-on-X engineered substrates fabricated by using Smart Cut technology Gweltaz Gaudin,Christelle Veytizou,Jan Strate,Florence Servant,Amélie Thomaset al. ICNS-14, Nov 2023, Fukuoka, Japan. 2023 Poster de conférence cea-04667600v1

Chapitre d'ouvrage (2)

Collage direct - Assemblage sans adhésif pour environnements extrêmes Aurélien Maurel-Pantel,Frank Fournel,Thierry Billeton,Jérôme Debray,Christophe Hecquetet al. Techniques de l'ingénieur, pp.N 2000, 2024, ⟨10.51257/a-v1-n2000⟩ Chapitre d'ouvrage hal-04801185v1
Fano-Resonances in High Index Dielectric Nanowires for Directional Scattering Peter Wiecha,Aurelien Cuche,Houssem Kallel,Gérard Colas Des Francs,Aurélie Lecestreet al. Eugene Kamenetskii; Almas Sadreev; Andrey Miroshnichenko. Fano Resonances in Optics and Microwaves: Physics and Applications, Springer, pp.283-310, 2018, 978-3-319-99730-8. ⟨10.1007/978-3-319-99731-5_12⟩ Chapitre d'ouvrage hal-01850259v1

Brevet (2)

PROCEDE ET DISPOSITIF DE CONTROLE D'UN COLLAGE ENTRE DEUX SUBSTRATS Frank Fournel,Ali Dekious,Emilie Deloffre,Gilles Despaux,Vincent Larreyet al. France, N° de brevet: FR3060121. 2018 Brevet hal-02065696v1
Procédé de nanostructuration de la surface d'un substrat Florent Pigeon,Florence Garrelie,Frank Fournel,Alexis Bavard,Jérôme Meziere N° de brevet: FRA 0652981. 2007 Brevet hal-00170052v1

Thèse (1)

REALISATION PAR ADHESION MOLECULAIRE D'UN SUBSTRAT INDUISANT L'AUTO-ORGANISATION LATERALE ET CONTROLEE DU DEPOT DE NANOSTRUCTURES Frank Fournel Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2001. Français. ⟨NNT : ⟩ Thèse tel-00003882v1

HDR (1)

Applications de l'adhésion moléculaire Frank Fournel Génie des procédés. Université Grenoble 1, 2009 HDR tel-04086626v1