Francis CALMON

Présentation

Publications

Article dans une revue (29)

Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology Shaochen Gao,Duc-Tung Vu,Thibauld Cazimajou,Patrick Pittet,Martine Le Berreet al. Photonics, 2024, 11 (6), pp.526. ⟨10.3390/photonics11060526⟩ Article dans une revue hal-04599693v1
Integration of an Ultra-Fast Active Quenching Circuit with a Monolithic 3D SPAD Pixel in a 28 nm FD-SOI CMOS Technology Mohammadreza Dolatpoor Lakeh,Jean-Baptiste Kammerer,Jean-Baptiste Schell,Dylan Issartel,Shaochen Gaoet al. Sensors and Actuators A: Physical , 2023, 363, pp.114744. ⟨10.1016/j.sna.2023.114744⟩ Article dans une revue hal-04241792v1
Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR D. Issartel,S. Gao,P. Pittet,R. Cellier,D. Golanskiet al. Solid-State Electronics, 2022, 191, pp.108297. ⟨10.1016/j.sse.2022.108297⟩ Article dans une revue hal-03651521v1
An analytical solution for McIntyre’s model of avalanche triggering probability for SPAD compact modeling and performance exploration Tulio Chaves de Albuquerque,Dylan Issartel,Shaochen Gao,Younes Benhammou,Dominique Golanskiet al. Semiconductor Science and Technology, 2021, ⟨10.1088/1361-6641/ac00d0⟩ Article dans une revue hal-03255595v1
An Ultrafast Active Quenching Active Reset Circuit with 50 % SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique Mohammadreza Dolatpoor Lakeh,Jean-Baptiste Kammerer,Enagnon Aguenounon,Dylan Issartel,Jean-Baptiste Schellet al. Sensors, 2021, ⟨10.3390/s21124014⟩ Article dans une revue hal-03254577v1
Indirect Avalanche Event Detection of Single Photon Avalanche Diode Implemented in CMOS FDSOI Technology Tulio Chaves de Albuquerque,Dylan Issartel,Raphaël Clerc,Patrick Pittet,Rémy Cellieret al. Solid-State Electronics, 2020, pp.107636. ⟨10.1016/j.sse.2019.107636⟩ Article dans une revue hal-02294857v1
3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection M.M. Vignetti,F. Calmon,P. Pittet,G. Pares,R. Cellieret al. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2018, 881, pp.53-59. ⟨10.1016/j.nima.2017.10.089⟩ Article dans une revue istex hal-01703734v1
A High-Efficiency Compact Planar Antenna for ISM Wireless Systems Tao Zhou,Yazi Cao,Zhiqun Cheng,Martine Le Berre,Francis Calmon International Journal of Antennas and Propagation, 2017, 2017, pp.7319275. ⟨10.1155/2017/7319275⟩ Article dans une revue hal-01888316v1
Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition Daniel Thomas,Etienne Puyoo,Martine Le Berre,Liviu Militaru,Siddardha Konetiet al. Nanotechnology, 2017, 28 (45), 455602 (8 p.). ⟨10.1088/1361-6528/aa8b5e⟩ Article dans une revue hal-01644827v1
Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology M.M. Vignetti,F. Calmon,P. Lesieur,A. Savoy-Navarro Solid-State Electronics, 2017, 128, pp.163 - 171. ⟨10.1016/j.sse.2016.10.014⟩ Article dans une revue hal-01885619v1
Electrothermal Modeling for 3-D Nanoscale Circuit Substrates: Noise Yue Ma,Latifa Fakri-Bouchet,Francis Calmon,Christian Gontrand IEEE Transactions on Components and Packaging Technologies, 2016, 6 (7), pp.1042-1052. ⟨10.1109/TCPMT.2016.2575363⟩ Article dans une revue hal-01701400v1
Electrical characterization and TCAD simulations of multi-gate bulk nMOSFET Inga Zbierska,Liviu Militaru,Françis Calmon,Sylvain Feruglio,Guo-Neng Lu Microelectronics Journal, 2015, 46 (7), pp.588-592. ⟨10.1016/j.mejo.2015.03.018⟩ Article dans une revue hal-01488981v1
Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiOx /Ti junctions N. Guillaume,E. Puyoo,M. Le Berre,D. Albertini,N. Babouxet al. Journal of Applied Physics, 2015, 118 (14), pp.144502. ⟨10.1063/1.4932646⟩ Article dans une revue hal-02048470v1
Miniaturized Tunable TeraHertz Antenna Based on Graphene Tao Zhou,Z. Cheng,H. Zhang,M. Le Berre,Liviu Militaruet al. Microwave and Optical Technology Letters, 2015, 56 (8), pp. 1792-1794 Article dans une revue hal-01489440v1
Preliminary simulation study of a Coincidence Avalanche Pixel Sensor Matteo Vignetti,Francis Calmon,Rémy Cellier,Patrick Pittet,Laurent Quiquerezet al. Journal of Instrumentation, 2015, 10, pp.C06007. ⟨10.1088/1748-0221/10/06/C06007⟩ Article dans une revue hal-01489375v1
An efficient and simple compact modeling approach for 3-D interconnects with IC׳s stack global electrical context consideration Jean-Etienne Lorival,Francis Calmon,Fengyuan Sun,Felipe Frantz,Carole Plossuet al. Microelectronics Journal, 2015, 46 (2), pp.153-165. ⟨10.1016/j.mejo.2014.12.002⟩ Article dans une revue istex hal-02060679v1
Tunnel junction engineering for optimized Metallic Single Electron Transistor K. El Hajjam,Mohamed-Amine Bounouar,Nicolas Baboux,S. Ecoffey,M. Guilmainet al. IEEE Transactions on Electron Devices, 2015, 62 (9), pp.2298-3003. ⟨10.1109/TED.2015.2452575⟩ Article dans une revue hal-01489315v1
Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies M.M. Vignetti,F. Calmon,R. Cellier,P. Pittet,L. Quiquerezet al. Microelectronics Journal, 2015, 46 (10), pp.900 - 910. ⟨10.1016/j.mejo.2015.07.002⟩ Article dans une revue hal-01886644v1
Through silicon vias: from a physical point of view to a compact models initiation Fengyuan Sun,Jean-Etienne Lorival,Francis Calmon,Christian Gontrand The International Journal for Computation and Mathematics in Electrical and Elec, 2014, 33, pp.1462-1484 Article dans une revue hal-01489936v1
Highly transparent low capacitance PEALD Al2O3-HfO2 tunnel junction engineering K. El Hajjam,Nicolas Baboux,Francis Calmon,Abdelkader Souifi,O. Ponceletet al. Journal of Vacuum Science and Technology, 2014, 32, pp.01A132 Article dans une revue hal-01490344v1
3D substrate modeling; from a first order electrical analysis, towards some possible signal fluctuations consideration, for radiofrequency circuits Christian Gontrand,Fengyuan Sun,R. Cardenas,P. Ma,Carole Plossuet al. Microelectronics Journal, 2014, 45, pp.1061-1068 Article dans une revue hal-01490330v1
Enhanced tunable nonreciprocal effect in CRLH coplanar transmission line on YIG without series capacitive loading Tao Zhou,Martine Le Berre,Gwenaelle Vest,Calmon F.,Farid Boukchicheet al. Microwave and Optical Technology Letters, 2013, ⟨10.1002/mop.27979⟩ Article dans une revue istex hal-03327975v1
Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking E. Eid,T. Lacrevaz,C. Bermond,S. de Rivaz,S. Capraroet al. Microelectronic Engineering, 2011, 88 (5), pp.729-733 Article dans une revue hal-01068838v1
Coplanar waveguides with or without barium ferrite thin films T. Zhou,M. Le Berre,Evangéline Bènevent,A.-S. Dehlinger,F. Calmonet al. Microwave and Optical Technology Letters, 2010, 52 (9), pp.2007-2010. ⟨10.1002/mop.25393⟩ Article dans une revue istex ujm-00733387v1
Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri,R. Clerc,F. Calmon,M.G. Pala,A. Poncetet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6 (6), pp.1408-1411 Article dans une revue hal-00596139v1
Interdigitated back contact solar cells with SiO2 and SiN back surface passivation I. Jozwik,P. Papet,A. Kaminski,E. Fourmond,F. Calmonet al. Journal of Non-Crystalline Solids, 2008, 354 (35-39), pp.4341-4344. ⟨10.1016/j.jnoncrysol.2008.06.083⟩ Article dans une revue istex hal-02328336v1
FPGA and mixed FPGA-DSP implementations of electrical drive algorithms F. Calmon,M. Fathallah,Pierre-Jean Viverge,C. Gontrand,J. Carrabinaet al. Lecture Notes in Computer Science, 2002, 2438, pp.1144-1147 Article dans une revue hal-00141474v1
Les composants de puissance : état de l'art, les évolutions Jean-Pierre Chante,Bruno Allard,Dominique Bergogne,Francis Calmon,René Elhingeret al. Revue Internationale de Génie Electrique, RIGE, 1998 Article dans une revue hal-02117240v1
Numerical and Analytical Investigations on IGBTs Thermal Behaviour F. Calmon,J.-P. Chante,A. Sénès,B. Reymond Journal de Physique III, 1997, 7 (3), pp.689-705. ⟨10.1051/jp3:1997149⟩ Article dans une revue istex jpa-00249607v1

Communication dans un congrès (47)

Using the Dark Count Rate of SPAD Implemented in CMOS FD-SOI Technology for True Random Number Generator Francis Calmon,Rida Habach,Wilfried Uhring,Sara Pellegrini,Dominique Golanskiet al. NEWCAS 2025, Jun 2025, Paris, France. pp.485-489, ⟨10.1109/NewCAS64648.2025.11107005⟩ Communication dans un congrès hal-05038778v1
Front-Side Photon Detection improvement of SPAD integrated in FD-SOI CMOS Technology thanks to STI patterning Duc Tung Vu,Shaochen Gao,Thibauld Cazimajou,Patrick Pittet,Martine Le Berreet al. ISSW 2024 Te International Spad Sensor Workshop, 4-6 June 2024, Trento, Italy, Jun 2024, Trento, Italy Communication dans un congrès hal-04493136v1
Transient Measurements of Avalanche Dynamics and Quenching in SPADs Wilfried Uhring,Mohammadreza Dolatpoor Lakeh,Francis Calmon,Raul Andres Bianchi,Denis Rideauet al. ISSW 2024 Te International Spad Sensor Workshop, 4-6 June 2024, Trento, Italy, Jun 2024, Trento, France Communication dans un congrès hal-04493135v1
Indoor Optical Wireless Communication Coverage Optimization Using a SiPM Photoreceiver Bastien Béchadergue,Thibauld Cazimajou,Fabien Mandorlo,Calmon F. 2023 IEEE Wireless Communications and Networking Conference (WCNC), Mar 2023, Glasgow, United Kingdom. pp.1-6, ⟨10.1109/WCNC55385.2023.10118956⟩ Communication dans un congrès hal-04145642v1
Germanium on silicon SPAD 32x32 pixel array in 3D-stacked technology for SWIR applications Younes Benhammou,Norbert Moussy,R. Paquet,C. Buj,O. Saxodet al. IISW23 - International Image Sensor Workshop, May 2023, Crieff, United Kingdom. pp.R8.5 Communication dans un congrès hal-05384167v1
Statistical measurements and Monte-Carlo simulations of DCR in SPADs Mathieu Sicre,Megan Agnew,Christel Buj,Caroline Coutier,Dominique Golanskiet al. ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), Sep 2022, Milan, Italy. pp.193-196, ⟨10.1109/ESSCIRC55480.2022.9911519⟩ Communication dans un congrès hal-04138798v1
Identification of stress factors and degradation mechanisms inducing DCR drift in SPADs Mathieu Sicre,Xavier Federspiel,David Roy,Bastien Mamby,Caroline Coutieret al. 2022 IEEE International Integrated Reliability Workshop (IIRW), Oct 2022, South Lake Tahoe, United States. pp.1-5, ⟨10.1109/IIRW56459.2022.10032759⟩ Communication dans un congrès hal-04138806v1
Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology D. Issartel,S. Gao,S. Hagen,P. Pittet,R. Cellieret al. 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560679⟩ Communication dans un congrès hal-03622067v1
Improving the Photon Detection Probability of SPAD implemented in FD-SOI CMOS Technology with light-trapping concept S. Gao,D. Issartel,Régis Orobtchouk,Fabien Mandorlo,D. Golanskiet al. 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560684⟩ Communication dans un congrès hal-03622066v1
An Active Quenching Circuit for a Native 3D SPAD Pixel in a 28 nm CMOS FDSOI Technology Mohammadreza Dolatpoor Lakeh,Jean-Baptiste Kammerer,Wilfried Uhring,Francis Calmon,Dylan Issartelet al. IEEE NEWCAS 2021, 2021, En ligne, France. ⟨10.1109/NEWCAS50681.2021.9462754⟩ Communication dans un congrès hal-03238121v1
3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology S. Gao,D. Issartel,R. Orobtchouk,F. Mandorlo,D. Golanskiet al. 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.301-304, ⟨10.1109/SISPAD54002.2021.9592555⟩ Communication dans un congrès halshs-03515486v1
Dark Count Rate in Single-Photon Avalanche Diodes: characterization and modeling study M. Sicre,M. Agnew,C. Buj,J. Coignus,D. Golanskiet al. ESSCIRC / ESSDERC 2021 - IEEE 47th European Solid State Circuits Conference, Sep 2021, Grenoble, France. pp.143-146, ⟨10.1109/ESSCIRC53450.2021.9567806⟩ Communication dans un congrès hal-03622065v1
An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology Mohammadreza Dolatpoor Lakeh,Jean-Baptiste Kammerer,Wilfried Uhring,Jean-Baptiste Schell,Calmon F. 2020 IEEE SENSORS, Oct 2020, Rotterdam, Netherlands. pp.1-4, ⟨10.1109/SENSORS47125.2020.9278902⟩ Communication dans un congrès hal-03254822v1
SPAD FDSOI cell optimization for lower dark count rate achievement D. Issartel,T. Chaves de Albuquerque,R. Clerc,P. Pittet,R. Cellieret al. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-5, ⟨10.1109/EUROSOI-ULIS49407.2020.9365292⟩ Communication dans un congrès hal-03254726v1
Body-biasing considerations with SPAD FDSOI: advantages and drawbacks T. Chaves de Albuquerque,D. Issartel,R. Clerc,P. Pittet,R. Cellieret al. ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Sep 2019, Cracow, Poland. pp.210-213, ⟨10.1109/essderc.2019.8901825⟩ Communication dans un congrès hal-02379994v1
Lowering the Dark Count Rate of SPAD Implemented in CMOS FDSOI Technology T. Chaves de Albuquerque,D. Issartel,R. Clerc,P. Pittet,R. Cellieret al. EUROSOI ULIS 2019, Apr 2019, Grenoble, France. ⟨10.1109/EUROSOI-ULIS45800.2019.9041916⟩ Communication dans un congrès hal-02333580v1
Integration of SPAD in 28nm FDSOI CMOS technology T. Chaves de Albuquerque,F. Calmon,R. Clerc,P. Pittet,Y. Benhammouet al. ESSDERC, 2018, Dresden, Germany. ⟨10.1109/ESSDERC.2018.8486852⟩ Communication dans un congrès hal-01958249v1
Pt nanoislands embedded in Al2O3 matrix: from ALD-based fabrication to structural to electrical characterization Daniel Thomas,Etienne Puyoo,Martine Le Berre,Liviu Militaru,S. Konetiet al. EMRS Spring Meeting, Jan 2017, Strasbourg, France Communication dans un congrès hal-01701466v1
PEALD Platinum Nano-island SET Fabrication and Electrical Characterization Daniel Thomas,Etienne Puyoo,M. Le Berre,Liviu Militaru,S. Konetiet al. AVS 17th International Conference on Atomic Layer Deposition, Jan 2017, Denver, United States Communication dans un congrès hal-01701467v1
Novel 3D SPAD architecture in an advanced FDSOI technology Francis Calmon,Matteo Vignetti 8th International Workshop on Intelligent Fast Interconnected and Efficient Devices for Frontier Exploitation in Research and Industry (INFIERI), 2016, FermiLab, USA, United States Communication dans un congrès hal-01489097v1
A novel 3D pixel concept for Geiger-mode detection in SOI technology Matteo Vignetti,Francis Calmon,P. Lesieur,T. Graziosi,A. Savoy-Navarro Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2016, Vienna, Austria Communication dans un congrès hal-01489132v1
Development of a 3D silicon coincidence avalanche detector for charged particle tracking in medical applications M. Vignetti,F. Calmon,P. Pittet,G. Pares,R. Cellieret al. 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD), Oct 2016, Strasbourg, France. ⟨10.1109/NSSMIC.2016.8069553⟩ Communication dans un congrès hal-01886637v1
Shadow Edge Lithography coupled with ALD growth of Alumina and Platinum Nanoislands Towards the Fabrication of Single Electron Transistors Daniel Thomas,Etienne Puyoo,M. Le Berre,Liviu Militaru,S. Konetiet al. EMRS Fall Meeting, 2016, Warsaw, Poland Communication dans un congrès hal-01489069v1
Enhancing electrical performances of Metallic DG-SET based circuits by Tunnel junction engineering K. El Hajjam,Mohamed-Amine Bounouar,D. Drouin,Francis Calmon Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2016, Vienna, Austria Communication dans un congrès hal-01489101v1
On the irreversible transformation of Ti/TiOx/Ti junctions under electrical stress Etienne Puyoo,Nicolas Guillaume,M. Le Berre,David Albertini,Nicolas Babouxet al. Energy Materials and Nanotechnology, 2016, Prague, Czech Republic Communication dans un congrès hal-01489096v1
A time-integration based quenching circuit for Geiger-mode avalanche diodes M. Vignetti,F. Calmon,R. Cellier,P. Pittet,L. Quiquerezet al. 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. ⟨10.1109/NEWCAS.2015.7182007⟩ Communication dans un congrès hal-01886653v1
Investigation of Electrical Characteristics of Multi-Gate Bulk nMOSFET Inga Jolanta Zbierska,L. Militaru,F. Calmon,Sylvain Feruglio,Guo-Neng Lu 29th International Conference on Microelectronics - MIEL 2014, May 2014, Belgrade, Serbia. pp.95 - 98, ⟨10.1109/MIEL.2014.6842094⟩ Communication dans un congrès hal-01201800v1
Electrical modeling of 3D interconnects: a set of tools under development Francis Calmon,Christian Gontrand Fourth International Workshop on Intelligent Fast Interconnected and Efficient Devices for Frontier Exploitation in Research and Industry, 2014, Madrid, Spain Communication dans un congrès hal-01490294v1
Oxydation locale d’une couche de titane par AFM pour la réalisation de composants mono-électroniques : étude paramétrée de différents modes de types de pointes Nicolas Guillaume,Etienne Puyoo,Martine Le Berre,David Albertini,Nicolas Babouxet al. 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, 2014, Lille, France Communication dans un congrès hal-01489838v1
Towards Nano-Computing Blocks Using Room Temperature Double-Gate Single Electron Transistors Mohamed-Amine Bounouar,D. Drouin,Francis Calmon 12th IEEE International New Circuits and Systems Conference (NEWCAS 2014), 2014, Trois-Rivières, Canada Communication dans un congrès hal-01489822v1
3D Integration of CMOS Image Sensor with Coprocessor Using TSV last and Micro-Bumps Technologies P. Coudrain,Dominique Henry,A. Berthelot,J. Charbonnier,S. Verrunet al. IEEE 63rd Electronic Components and Technology Conf., May 2013, Las Vegas, United States. pp.674-682 Communication dans un congrès hal-01018405v1
Experimental Study of a Bulk-Technology Tri-gates nMOSFET Inga Zbierska,Liviu Militaru,Françis Calmon,Sylvain Feruglio,Guo-Neng Lu Colloque du GDR Systemes materiels-logiciels integres, Jun 2013, Lyon, France Communication dans un congrès hal-01217536v1
Nano fabrication of oxide patterns using Atomic Force Microscopy on titanium towards the development of Nano devices Guillaume Nicolas,Etienne Puyoo,Martine Le Berre,David Albertini,Nicolas Babouxet al. ICQNM (Seventh International Conference on Quantum, Nano and Micro Technologies), Aug 2013, Barcelone, Spain Communication dans un congrès hal-02074965v1
Room temperature double gate single electron transistor based standard cell library Mohamed Amine Bounouar,Arnaud Beaumont,Khalil El Hajjam,Francis Calmon,Dominique A Drouin 2012 IEEE/ACM International Symposium on Nanoscale Architectures, Jul 2012, Amsterdam, France. pp.146-151, ⟨10.1145/2765491.2765518⟩ Communication dans un congrès hal-02074668v1
Effects of silicon substrate coupling phenomena on signal integrity for RF or high speed communications in 3D-IC. E. Eid,T. Lacrevaz,G. Houzet,C. Bermond,B. Fléchetet al. IEEE 62nd Electronic Components and Technology Conf.,, May 2012, San Diego, United States Communication dans un congrès hal-01062188v1
On the use of nanoelectronic logic cells based on metallic Single Electron Transistors Mohamed Amine Bounouar,Arnaud Beaumont,Francis Calmon,Dominique A Drouin 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. pp.157-160, ⟨10.1109/ULIS.2012.6193381⟩ Communication dans un congrès hal-02374490v1
Caractérisation des couplages électriques RF par les substrats de silicium en intégration 3D de circuits E. Eid,T. Lacrevaz,C. Bermond,S. Capraro,A. Farcyet al. JNM'11, May 2011, Brest, France Communication dans un congrès hal-01073528v1
Characterization and Modeling of RF Substrate Coupling Effects due to Vertical Interconnects in 3D Integrated Circuit Stacking E. Eid,T. Lacrevaz,C. Bermond,S. de Rivaz,S. Capraroet al. IEEE Signal Propagation on Interconnects,, May 2010, Hidelsheim, Germany Communication dans un congrès hal-00604327v1
“Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking” Materials for Advanced Metallization, March 7-10, 2010, Mechelen, Belgium. Eid E.,Lacrevaz T.,Bermond C.,Rivaz S. De,Capraro S.et al. Materials for Advanced Metallization, Mechelen, Belgium., Mar 2010, Mechelen, Belgium Communication dans un congrès hal-01074511v1
Effets de couplage RF par les substrats de silicium dans les empilements de circuits intégrés 3D E. Eid,T. Lacrevaz,C. Bermond,S. de Rivaz,S. Capraroet al. 11e Journées Caractérisation Microondes et Matériaux, Apr 2010, Brest, France Communication dans un congrès hal-00604503v1
Frequency and Time Domain Characterization of Substrate Coupling Effects in 3D Integration Stack E. Eid,T. Lacrevaz,C. Bermond,S. Capraro,J. Roullardet al. IEEE Int. Electronics Manufacturing Technology Conf.,, Dec 2010, Melaka, Malaysia Communication dans un congrès hal-00604338v1
Modélisation RLCG de lignes coplanaires sur un substrat Silicium pour applications CMOS O. Valorge,F. Calmon,M. Le Berre,C. Gontrand,E. Eidet al. 15e Compatibilité Electromagnétique CEM 2010, Apr 2010, Limoges, France Communication dans un congrès hal-00604508v1
Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking E. Eid,T. Lacrevaz,C. Bermond,S. de Rivaz,S. Capraroet al. Materials for Advanced Metallization, Mar 2010, Mechelen, Belgium Communication dans un congrès hal-00604323v1
Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking E. Eid,T. Lacrevaz,S. de Rivaz,C. Bermond,B. Fléchetet al. Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking, Sep 2009, San Francisco, United States Communication dans un congrès hal-00602866v1
Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri,R. Clerc,F. Calmon,M. Pala,A. Poncetet al. Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94 Communication dans un congrès hal-00604239v1
Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes E. Buccafurri,A. Medjahdi,F. Calmon,R. Clerc,M. Palaet al. European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241 Communication dans un congrès hal-00603719v1
Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri,R. Clerc,F. Calmon,M. Pala,A. Poncetet al. ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France Communication dans un congrès hal-00391921v1

Poster de conférence (10)

Correlations between DCR and PDP of SPAD integrated in a 28 nm FD-SOI CMOS Technology Shaochen Gao Gao,Dylan Issartel,Mohammadreza Dolatpoor Lakeh,Fabien Mandorlo,Régis Orobtchouket al. 2023, International Image Sensor Workshop (IISW), Crieff, United Kingdom, 21-25 May, 2023, May 2023, Crieff, United Kingdom. 2023 Poster de conférence hal-03977945v1
3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for Hadrontherapy and Proton Tomography : Preliminary Results on Charged Particle Detection M. Vignetti,F. Calmon,P. Pittet,G. Pares,R. Cellieret al. Forum de la Recherche en Cancérologie Auvergne-Rhône-Alpes 2017, Apr 2017, Lyon, France Poster de conférence hal-01504838v1
ALD growth of Platinum Nanoislands on Alumina for Single Electron Transistors Applications Daniel Thomas,Etienne Puyoo,Martine Le Berre,Liviu Militaru,S. Konetiet al. ALD growth of Platinum Nanoislands on Alumina for Single Electron Transistors Applications, 2016, Paris, France. 2016 Poster de conférence hal-01489072v1
On the behavior of electrically stressed Ti/TiOx/Ti junctions fabricated by local anodic oxidation Nicolas Guillaume,Etienne Puyoo,M. Le Berre,David Albertini,Nicolas Babouxet al. On the behavior of electrically stressed Ti/TiOx/Ti junctions fabricated by local anodic oxidation, 2015, Lille, France. 2015 Poster de conférence hal-01489627v1
Shadow Edge Evaporation for Single Electron Transistors Daniel Thomas,Etienne Puyoo,Martine Le Berre,Liviu Militaru,David Albertiniet al. Shadow Edge Evaporation for Single Electron Transistors, 2015, Lyon, France. 2015 Poster de conférence hal-01489632v1
Oxydation locale d’une couche de titane par AFM pour la réalisation de composants mono-électroniques : étude paramétrée de différents modes de types de pointes Nicolas Guillaume,Etienne Puyoo,Martine Le Berre,David Albertini,Nicolas Babouxet al. Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, May 2014, Lille, France Poster de conférence hal-02075131v1
Oxydation par AFM de fines couches métalliques pour la réalisation de composants mono-électroniques Nicolas Guillaume,Etienne Puyoo,Martine Le Berre,David Albertini,Nicolas Babouxet al. Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, Jun 2013, Grenoble, France Poster de conférence hal-02075185v1
Comparison of two conductive AFM probes for the local nano-oxidation of Ti thin films Nicolas Guillaume,Etienne Puyoo,David Albertini,Nicolas Baboux,Martine Le Berreet al. Journées Nationales sur les Technologies Emergentes en micro-nanofabrication, May 2013, Evian, France Poster de conférence hal-02075206v1
Use of Atomic Force Microscopy towards the Development of Nano Devices by Fabricating Oxide Patterns on Titanium thin Film Nicolas Guillaume,Etienne Puyoo,David Albertini,Nicolas Baboux,Martine Le Berreet al. First French-German Summer School on Noncontact Atomic Force Microscopy, Oct 2013, Porquerolles, France Poster de conférence hal-02075144v1
Elaboration by AFM lithography of nanostructured Ti/TiOx/Ti tunnel junction Nicolas Guillaume,Etienne Puyoo,David Albertini,Nicolas Baboux,Martine Le Berreet al. Euromat 2013 (European Congress & Exhibition on Advanced Materials and Processes), Sep 2013, Seville, Spain Poster de conférence hal-02075164v1

Chapitre d'ouvrage (1)

Mixed-Signal IC Design addressed to Substrate Noise Immunity in Bulk Silicon ; towards 3D circuits Olivier Valorge,Fengyuan Sun,Jean-Etienne Lorival,Francis Calmon,Christian Gontrand CRC Press, Germany. Mixed-Signal IC Design addressed to Substrate Noise Immunity in Bulk Silicon ; towards 3D circuits, VALORGE, SUN, LORIVAL, CALMON, GONTRAND, 2015 Chapitre d'ouvrage hal-01489586v1