François CAUWET

Publications

Article dans une revue (26)

Boron-SiC diffusion couple : thermodynamics and reactivity at high temperature Y. Benamra,B. Gardiola,F. Robaut,O. Dezellus,F. Cauwetet al. Journal of Phase Equilibria and Diffusion, 2025, ⟨10.1007/s11669-025-01212-4⟩ Article dans une revue hal-05306800v1
Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration Yann Jousseaume,François Cauwet,Gabriel Ferro Solid State Phenomena, 2023, 342, pp.73-78. ⟨10.4028/p-3ilk20⟩ Article dans une revue hal-04235310v1
From dissolution to controlled macrostepping of 4H-SiC during liquid Si-induced structuring in a sandwich configuration Yann Jousseaume,François Cauwet,Bruno Gardiola,Gabriel Ferro Journal of Crystal Growth, 2023, 617, pp.127294. ⟨10.1016/j.jcrysgro.2023.127294⟩ Article dans une revue hal-04186661v1
Thermochromic properties of pure NiTiO3 and its Cu- or Co-doped derivatives Loren Acher,Hyewon Ji,Nicolas Garino,Florian Massuyeau,Laurie Pontilleet al. Ceramics International, 2023, 49 (8), pp.12267-12273. ⟨10.1016/j.ceramint.2022.12.079⟩ Article dans une revue hal-03921687v1
Macrosteps formation on 4H-SiC surfaces via Si melting within a sandwich configuration Yann Jousseaume,François Cauwet,Gabriel Ferro Journal of Crystal Growth, 2022, 593, pp.126783. ⟨10.1016/j.jcrysgro.2022.126783⟩ Article dans une revue hal-03712777v1
Thermochromic Properties of Some Colored Oxide Materials Gabriel Ferro,Davy Carole,François Cauwet,Loren Acher,Hyewon Jiet al. Optical Materials: X, 2022, 15, pp.100167. ⟨10.2139/ssrn.4065706⟩ Article dans une revue hal-03712844v1
Fabrication of BN membranes containing high density of cylindrical pores using an elegant approach C. Marichy,V. Salles,X. Jaurand,A. Etiemble,Thierry Douillardet al. RSC Advances, 2017, 7 (34), pp.20709 - 20715. ⟨10.1039/c7ra03808a⟩ Article dans une revue hal-01597112v1
Highly Mg-doped GaN dots and films grown by VLS transport at low temperature Gabriel Ferro,Alexandre Jaud,Laurent Auvray,Abdelkarim Kahouli,Tony Abi-Tannouset al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600428⟩ Article dans une revue hal-01615198v1
Nanochannel arrays etched into hexagonal boron nitride meso-membranes by a focused ion beam S. Linas,R. Fulcrand,F. Cauwet,B. Poinsot,A. Brioude RSC Advances, 2015, 5 (61), pp.49231 - 49234. ⟨10.1039/c5ra05325k⟩ Article dans une revue hal-01597127v1
Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate K. Alassaad,M. Vivona,V. Soulière,B. Doisneau,F. Cauwetet al. ECS Journal of Solid State Science and Technology, 2014, 3 (8), pp.P285 - P292. ⟨10.1149/2.0121408jss⟩ Article dans une revue hal-01615319v1
Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Alassaad,Véronique Soulière,François Cauwet,Hervé Peyre,Davy Caroleet al. Acta Materialia, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩ Article dans une revue hal-01023271v1
Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport Davy Carole,Arthur Vo-Ha,Anthony Thomas,Mihai Lazar,Nicolas Thierry-Jebaliet al. Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩ Article dans une revue hal-00803058v1
p-Doped SiC Growth on Diamond Substrate by VLS Transport Arthur Vo Ha,Davy Carole,Mihai Lazar,Dominique Tournier,François Cauwetet al. Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩ Article dans une revue hal-01627777v1
Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase A. Vo-Ha,D. Carole,Mihai Lazar,Dominique Tournier,F. Cauwetet al. Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩ Article dans une revue istex hal-02863887v1
Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport A. Vo-Ha,D. Carole,Mihai Lazar,Dominique Tournier,F. Cauwetet al. Thin Solid Films, 2013, 548, pp.125 - 129. ⟨10.1016/j.tsf.2013.09.030⟩ Article dans une revue istex hal-01627830v1
Deposition of nanocrystalline translucent h-BN films by chemical vapor deposition at high temperature Ghassan Younes,Gabriel Ferro,Maher Soueidan,Arnaud Brioude,Véronique Soulièreet al. Thin Solid Films, 2012, 520 (7), pp.2424 - 2428. ⟨10.1016/j.tsf.2011.09.082⟩ Article dans une revue hal-01597171v1
Investigation of 3C-SiC growth on Si(111) by vapor-liquid-solid transport using a SiGe liquid phase S. Berckmans,Laurent Auvray,G. Ferro,F. Cauwet,V. Soulièreet al. Journal of Crystal Growth, 2012, 354, pp.119-128 Article dans une revue hal-01116034v1
Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour–liquid–solid mechanism from the Al–Ge–Si ternary system Jean Lorenzzi,Gabriel Ferro,François Cauwet,Véronique Soulière,Davy Carole Journal of Crystal Growth, 2011, 318 (1), pp.397-400. ⟨10.1016/j.jcrysgro.2010.10.174⟩ Article dans une revue hal-02573259v1
Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates Jean Lorenzzi,Véronique Soulière,Davy Carole,Nikoletta Jegenyes,Olivier Kim-Haket al. Diamond and Related Materials, 2011, 20 (5-6), pp.808-813. ⟨10.1016/j.diamond.2011.03.037⟩ Article dans une revue hal-02573245v1
3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt J. Lorenzzi,Mihai Lazar,Dominique Tournier,N. Jegenyes,D. Caroleet al. Crystal Growth & Design, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩ Article dans une revue hal-00786365v1
Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst Davy Carole,Arnaud Brioude,Anne Pillonnet,Jean Lorenzzi,Olivier Kim-Haket al. Journal of Crystal Growth, 2011, 320 (1), pp.55 - 62. ⟨10.1016/j.jcrysgro.2011.01.104⟩ Article dans une revue istex hal-01597189v1
Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism Jean Lorenzzi,Georgios Zoulis,Jianwu Sun,Maya Marinova,Olivier Kim-Haket al. Journal of Crystal Growth, 2010, 312 (23), pp.3443-3450. ⟨10.1016/j.jcrysgro.2010.08.058⟩ Article dans une revue istex hal-00547051v1
Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates Ghassan Younes,Gabriel Ferro,Maher Soueidan,Arnaud Brioude,François Cauwet Materials Science Forum, 2010, 645-648, pp.1191 - 1194. ⟨10.4028/www.scientific.net/MSF.645-648.1191⟩ Article dans une revue hal-01597208v1
SiC Homoepitaxial Growth at Low Temperature by Vapor-Liquid-Solid Mechanism in Al-Si Melt Christophe Jacquier,Gabriel Ferro,François Cauwet,Didier Chaussende,Yves Monteil Crystal Growth & Design, 2003, 3 (3), pp.285-287. ⟨10.1021/cg0256069⟩ Article dans une revue hal-00187892v1
A comprehensive study of SiC growth processes in a VPE reactor Thierry Chassagne,Gabriel Ferro,Didier Chaussende,François Cauwet,Yves Monteilet al. Thin Solid Films, 2002, 402, pp.83-89 Article dans une revue hal-00187126v1
Study of the interaction between graphite and Al-Si melts for the growth of crystalline silicon carbide Christophe Jacquier,Didier Chaussende,Gabriel Ferro,Jean-Claude Viala,François Cauwetet al. Journal of Materials Science, 2002, 37, pp.3299-3306 Article dans une revue hal-00187149v1

Communication dans un congrès (21)

Structuration de surface du 4H-SiC en macro-marches parallèles à partir d'un sandwich SiC/Si(liq)/SiC Gabriel Ferro,Yann Jousseaume,François Cauwet Conférence MATÉPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France Communication dans un congrès hal-04884295v1
Effet de la polarité du substrat 4H-SiC sur la croissance hétéroépitaxiale du carbure de bore BxC par CVD Gabriel Ferro,Laurent Auvray,François Cauwet,Yamina Benamra Conférence MATEPI 2023, Jean-Noël AQUA, Jul 2023, Paris, France Communication dans un congrès hal-04884322v1
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach Yann Jousseaume,Piyush Kumar,Marianne Etzelmüller Bathen,François Cauwet,Ulrike Grossneret al. International conference on silicon carbide and related materials, Andrea Irace; Giovanni Breglio, Sep 2023, Sorrento (Italie), Italy Communication dans un congrès hal-04887969v1
Thermochromic properties of NiTiO3 Loren Acher,Hyewon Ji,Nicolas Garino,Florian Massuyeau,Stéphane Jobicet al. E-MRS 2022 Spring Meeting, European Materials Research Society, May 2022, Virtual conference, France Communication dans un congrès hal-04866158v1
Epitaxial Growth of Boron Carbide on 4H-SiC Yamina Benamra,Laurent Auvray,J. Andrieux,François Cauwet,Maria-Paz Alegreet al. International conference on silicon carbide and related materials 2022, Sep 2022, DAVOS, Switzerland Communication dans un congrès hal-04877889v1
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction Yann Jousseaume,François Cauwet,Judith Woerle,Ulrike Grossner,Sofia Aslanidouet al. International conference on silicon carbide and related materials, Ulrike Grossner, Sep 2022, Davos (Suisse), Switzerland. ⟨10.4028/p-5p6o3j⟩ Communication dans un congrès hal-04593942v1
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations Gabriel Ferro,Taguhi Yeghoyan,François Cauwet,Stephane Coindeau,Thierry Encinaset al. European conference on silicon carbide and related materials, ALQUIER Daniel, Oct 2021, Tours (France), France Communication dans un congrès hal-04887793v1
Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation Véronique Soulière,Kassem Alassaad,François Cauwet,Hervé Peyre,Thomas Kupset al. 10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.115-120 Communication dans un congrès hal-02025347v1
Ge assisted SiC epitaxial growth by CVD on SiC substrate Kassem Alassaad,Véronique Soulière,Beatrice Doisneau,François Cauwet,Hervé Peyreet al. 15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩ Communication dans un congrès hal-02025422v1
Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors Kassem Alassaad,François Cauwet,Davy Carole,Véronique Soulière,Gabriel Ferro 9th European Conference on Silicon Carbide and Related Materials, Sep 2012, Saint Petersburg, Russia. pp.323-326, ⟨10.4028/www.scientific.net/MSF.740-742.323⟩ Communication dans un congrès hal-02864858v1
p-type SiC growth on diamond substrate by VLS Transport Arthur Vo-Ha,Davy Carole,Mihai Lazar,D. Tournier,François Cauwetet al. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-04423301v1
Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport Davy Carole,Arthur Vo-Ha,Anthony Thomas,Mihai Lazar,Nicolas Thierry Thierry-Jebaliet al. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p Communication dans un congrès hal-04362529v1
Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layer S. Berckmans,Laurent Auvray,Gabriel Ferro,F. Cauwet,V. Souliereet al. HeteroSiC–WASMPE, Jun 2011, Tours, France Communication dans un congrès hal-01116084v1
Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate Nikoletta Jegenyes,Véronique Soulière,François Cauwet,Gabriel Ferro 14th International Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States. pp.145-148, ⟨10.4028/www.scientific.net/MSF.717-720.145⟩ Communication dans un congrès hal-02864847v1
Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate Jean Lorenzzi,Nicoletta Jegenyes,Mihai Lazar,Dominique Tournier,Davy Caroleet al. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩ Communication dans un congrès hal-00747669v1
Investigation of 3C-SiC lateral growth on 4H-SiC MESAs Jean Lorenzzi,Nikoletta Jegenyes,Mihai Lazar,Dominique Tournier,Francois Cauwetet al. CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩ Communication dans un congrès hal-00786369v1
Investigation of the growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) transport S. Berckmans,Laurent Auvray,G. Ferro,F. Cauwet,D. Caroleet al. ECSCRM 2010, Aug 2010, Oslo, Norway. pp.99-102 Communication dans un congrès hal-01116070v1
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates Jean Lorenzzi,Georgios Zoulis,Olivier Kim-Hak,Nikoletta Jegenyes,Davy Caroleet al. 13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩ Communication dans un congrès hal-02864825v1
Growing p-type 3C-SiC heteroepitaxial layers by Vapour-Liquid-Solid mechanism on 6H-SiC substrate J. Lorenzzi,Véronique Soulière,F. Cauwet,D. Carole,G. Ferro E-MRS Symposium 2010, European Materials Research Society, Oct 2010, Strasbourg, France. pp.11-14, ⟨10.1063/1.3518276⟩ Communication dans un congrès hal-02863903v1
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature Nikoletta Jegenyes,Jean Lorenzzi,Véronique Soulière,Jacques Dazord,François Cauwetet al. 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.127-130, ⟨10.4028/www.scientific.net/MSF.645-648.127⟩ Communication dans un congrès hal-02864840v1
Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS Gabriel Ferro,Maher Soueidan,Olivier Kim-Hak,Jacques Dazord,François Cauwetet al. 12th International Conference on Silicon Carbide and Related Materials, Oct 2007, Otsu, Japan. pp.195-198, ⟨10.4028/www.scientific.net/MSF.600-603.195⟩ Communication dans un congrès hal-02864815v1

Poster de conférence (3)

Polarity Effect on the Heteroepitaxial Growth of BxС On 4H-SiС by CVD François Cauwet,Yamina Benamra,Laurent Auvray,J. Andrieux,Gabriel Ferro International conference on silicon carbide and related materials, Sep 2023, Sorrento (Italie), Italy Poster de conférence hal-04872652v1
Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration Yann Jousseaume,François Cauwet,Gabriel Ferro 19th International conference on silicon carbide and related materials (ICSCRM 2022), Sep 2022, Davos, Switzerland. , ⟨10.4028/p-3ilk20⟩ Poster de conférence hal-04593959v1
Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration Yann Jousseaume,François Cauwet,Gabriel Ferro European Conference on silicon carbide and related materials, Oct 2021, Tours (FR), France. ⟨10.4028/p-8302i1⟩ Poster de conférence hal-04595559v1

Proceedings/Recueil des communications (3)

Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD François Cauwet,Yamina Benamra,Laurent Auvray,J. Andrieux,Gabriel Ferro International conference on silicon carbide and related materials 2023, Solid State Phenomena, 362, pp.1-6, 2024, ⟨10.4028/p-uFrJ54⟩ Proceedings/Recueil des communications hal-04726099v1
Epitaxial Growth of Boron Carbide on 4H-SiC Yamina Benamra,Laurent Auvray,Jérôme Andrieux,François Cauwet,Maria-Paz Alegreet al. International conference on silicon carbide and related materials 2022, Solid State Phenomena, 343, pp.3-8, 2023, ⟨10.4028/p-6t47nz⟩ Proceedings/Recueil des communications hal-04235394v1
Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer Stéphane Berckmans,Laurent Auvray,Gabriel Ferro,François Cauwet,Véronique Soulièreet al. European Conference on Silicon Carbide and Related Materials, Aug 2010, Oslo (Norway), Norway. Materials Science Forum, 711, pp.35-39, 2012, ⟨10.4028/www.scientific.net/MSF.711.35⟩ Proceedings/Recueil des communications hal-05314242v1

N°spécial de revue/special issue (1)

Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration Yann Jousseaume,François Cauwet,Gabriel Ferro Materials Science Forum, 1062, pp.8 - 12, 2022, ⟨10.4028/p-8302i1⟩ N°spécial de revue/special issue hal-03800141v1

Chapitre d'ouvrage (1)

Synthesis of Silicon Carbide Nanowires from a mixture of CaCO3 and Si powders. Mikhael Bechelany,David Cornu,F. Chassagneux,Samuel Bernard,F. Cauwetet al. Ceramics Nanomaterials and Nanotechnologies, 172, pp.149-157, 2006, Ceramic Transactions, 978-1-574-98242-8. ⟨10.1002/9781118408049.ch15⟩ Chapitre d'ouvrage hal-01702716v1

Autre publication scientifique (3)

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach Yann Jousseaume,Piyush Kumar,Marianne Etzelmüller Bathen,François Cauwet,Ulrike Grossneret al. 2024, pp.7-12. ⟨10.4028/p-auZ0OI⟩ Autre publication scientifique hal-04726127v1
Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction Yann Jousseaume,François Cauwet,Judith Woerle,Ulrike Grossner,Sofia Aslanidouet al. 2023, pp.9-14. ⟨10.4028/p-5p6o3j⟩ Autre publication scientifique hal-04235371v1
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations Gabriel Ferro,Taguhi Yeghoyan,François Cauwet,Stéphane Coindeau,Thierry Encinaset al. 2022, pp.23 - 27. ⟨10.4028/p-aaf11g⟩ Autre publication scientifique hal-03800131v1