Frédéric CAYREL

Identifiants chercheurs

IdHAL :

frederic-cayrel

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094927898

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Publications

Article dans une revue (24)

Robustness of the Au/Ni ohmic contact on p-type GaN through microelectronic manufacturing processes Quentin Paoli,Frédéric Cayrel,Zihao Lyu,Laurent Barreau,Daniel Alquier Materials Science in Semiconductor Processing, 2025, 192, pp.109429. ⟨10.1016/j.mssp.2025.109429⟩ Article dans une revue hal-05547161v1
A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy Georgio El-Zammar,Arnaud Yvon,Wahid Khalfaoui,Maher Nafouti,Frédéric Cayrelet al. Materials Science in Semiconductor Processing, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩ Article dans une revue istex hal-02140135v1
Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer Wahid Khalfaoui,Thomas Oheix,Georgio El-Zammar,Roland Benoit,Frédéric Cayrelet al. Physica Status Solidi A (applications and materials science), 2017, 214 (4), ⟨10.1002/pssa.201600438⟩ Article dans une revue hal-01721021v1
Investigation of ferromagnetic heterogeneities in La 0.7 Sr 0.3 MnO 3 thin films Silvana Mercone,B Belmeguenai,M Malo,F. Ott,Frédéric Cayrelet al. Journal of Physics D: Applied Physics, 2017, 50 (4), pp.045001. ⟨10.1088/1361-6463/aa50be⟩ Article dans une revue hal-01862707v1
Optimization of VLS Growth Process for 4H-SiC P/N Junctions Selsabil Sejil,Mihai Lazar,Frédéric Cayrel,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩ Article dans une revue hal-01388031v1
Single-crystalline ZnO sheet Source-Gated Transistors Abhishek Singh Dahiya,Charles Opoku,R A Sporea,Balasubramaniam Sarvankumar,G. Poulin-Vittrantet al. Scientific Reports, 2016, 6, pp.19232. ⟨10.1038/srep19232⟩ Article dans une revue hal-02077037v1
Porosity and Thickness Characterization of Porous Si and Oxidized Porous Si layers – an ultraviolet-visible-mid Infrared Ellipsometry Study Balint Fodor,Emil Agocs,Benjamin Bardet,Thomas Defforge,Frederic Cayrelet al. Microporous and Mesoporous Materials, 2016, 227, pp.112-120. ⟨10.1016/j.micromeso.2016.02.039⟩ Article dans une revue hal-01784759v1
Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors Abhishek Singh Dahiya,Charles Opoku,Frédéric Cayrel,Damien Valente,Guylaine Poulin-Vittrantet al. Thin Solid Films, 2016, 617, pp.114-119. ⟨10.1016/j.tsf.2016.02.021⟩ Article dans une revue istex hal-02069635v1
Zinc Oxide Sheet Field-Effect Transistors Abhishek Singh Dahiya,Charles Opoku,Christopher Oshman,Guylaine Poulin-Vittrant,Frédéric Cayrelet al. Applied Physics Letters, 2015, 107 (3), pp.033105. ⟨10.1063/1.4927270⟩ Article dans une revue hal-01831015v1
Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires Charles Opoku,Abhishek Singh Dahiya,Christopher Oshman,Christophe Daumont,Frédéric Cayrelet al. Nanotechnology, 2015, 26 (35), pp.355704. ⟨10.1088/0957-4484/26/35/355704⟩ Article dans une revue hal-02077067v1
Surface State of GaN after Rapid-Thermal-Annealing Using AlN Cap-Layer Georgio El-Zammar,Wahid Khalfaoui,Thomas Oheix,Arnaud Yvon,Emmanuel Collardet al. Applied Surface Science, 2015, 355, pp.1044-1050. ⟨10.1016/j.apsusc.2015.07.201⟩ Article dans une revue istex hal-01784768v1
Fabrication of Field-Effect Transistors and Functional Nanogenerators Using Hydrothermally Grown ZnO Nanowires Charles Opoku,Abhishek Singh Dahiya,Frédéric Cayrel,Guylaine Poulin-Vittrant,Daniel Alquieret al. RSC Advances, 2015, 5 (86), pp.69925-69931. ⟨10.1039/C5RA11450K⟩ Article dans une revue hal-01831012v1
Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures Charles Opoku,Abhishek Singh Dahiya,Christopher Oshman,Frédéric Cayrel,Guylaine Poulin-Vittrantet al. Physics Procedia, 2015, 70, pp.858-862. ⟨10.1016/j.phpro.2015.08.176⟩ Article dans une revue hal-02092564v1
Characterization of In-Depth Cavity Distribution after Thermal Annealing of Helium-Implanted Silicon and Gallium Nitride Balint Fodor,Frédéric Cayrel,E. Agocs,Daniel Alquier,M. Friedet al. Thin Solid Films, 2014, 571, pp.567-572. ⟨10.1016/j.tsf.2014.02.014⟩ Article dans une revue hal-01784778v1
Controlled Growth of 1D and 2D ZnO Nanostructures on 4H-SiC Using Au Catalyst Abhishek Singh Dahiya,Charles Opoku,Daniel Alquier,Guylaine Poulin-Vittrant,Frederic Cayrelet al. Nanoscale Research Letters, 2014, 9 (1), pp.379. ⟨10.1186/1556-276X-9-379⟩ Article dans une revue hal-01831021v1
Systematic Study of Anodic Etching of Highly Doped N-Type 4H-SiC in Various HF Based Electrolytes Gaël Gautier,Jérôme Biscarrat,Damien Valente,Thomas Defforge,A. Garyet al. Journal of The Electrochemical Society, 2013, 160 (9), pp.D372-D379. ⟨10.1149/2.082309jes⟩ Article dans une revue hal-01810897v1
Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces Gaël Gautier,Frédéric Cayrel,Marie Capelle,Jérôme Billoue,Xi Songet al. Nanoscale Research Letters, 2012, 7 (1), pp.367-373. ⟨10.1186/1556-276X-7-367⟩ Article dans une revue hal-01810904v1
Carrier Profiling in Si-Implanted Gallium Nitride by Scanning Capacitance Microscopy Mohamed Lamhamdi,Frédéric Cayrel,Anne-Elisabeth Bazin,Emmanuel Collard,Daniel Alquier Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 275, pp.37-40. ⟨10.1016/j.nimb.2011.12.003⟩ Article dans une revue istex hal-01810912v1
Si Implanted Reactivation in GaN Grown on Sapphire Using AlN and Oxide Cap Layers Frédéric Cayrel,Anne-Elisabeth Bazin,Mohamed Lamhamdi,Y. Benchanaa,Olivier Ménardet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 272, pp.137-140. ⟨10.1016/j.nimb.2011.01.050⟩ Article dans une revue istex hal-01810910v1
Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates David Schenk,Alexis Bavard,Eric Frayssinet,Xi Song,Frédéric Cayrelet al. Applied Physics Express, 2012, 5 (2), pp.025504. ⟨10.1143/APEX.5.025504⟩ Article dans une revue hal-01810916v1
Recent Progresses in GaN Power Rectifier Daniel Alquier,Frédéric Cayrel,Olivier Ménard,Anne-Elisabeth Bazin,Arnaud Yvonet al. Japanese Journal of Applied Physics, 2012, 51 (1S), pp.01AG08. ⟨10.1143/JJAP.51.01AG08⟩ Article dans une revue hal-01810909v1
RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide Gaël Gautier,Marie Capelle,Jérôme Billoue,Frédéric Cayrel,Patrick Poveda IEEE Electron Device Letters, 2012, 33 (4), pp.477-479. ⟨10.1109/LED.2012.2185478⟩ Article dans une revue hal-01810907v1
TiAl Ohmic Contact on GaN, in Situ High or Low Doped or Si Implanted, Epitaxially Grown on Sapphire or Silicon Frédéric Cayrel,Olivier Ménard,Arnaud Yvon,Nicolas Thierry-Jébali,Christian Brylinskyet al. Physica Status Solidi A (applications and materials science), 2012, 209 (6), pp.1059-1066. ⟨10.1002/pssa.201127564⟩ Article dans une revue istex hal-01810914v1
Low temperature (down to 450° C) annealed TiAl contacts on N-type gallium nitride characterized by differential scanning calorimetry N. Thierry-Jebali,O. Menard,R. Chiriac,E. Collard,C. Brylinskiet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (2), pp.447--449 Article dans une revue hal-00763471v1

Communication dans un congrès (3)

Fabrication and functional characterization of ZnO nanowire based piezoelectric nanogenerators François Morini,Abhishek Singh Dahiya,Sarah Boubenia,Charles Opoku,Guylaine Poulin-Vittrantet al. 13th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC), Jun 2016, Aveiro, Portugal Communication dans un congrès hal-03591413v1
Investigations on the origin of the ohmic behavior for Ti/Al based contacts on n-type GaN Nicolas Thierry-Jebali,Olivier Ménard,Christiane Dubois,Dominique Tournier,Emmanuel Collardet al. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.208-212, ⟨10.4028/www.scientific.net/MSF.711.208⟩ Communication dans un congrès hal-00747672v1
Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers Christian Brylinski,Olivier Ménard,Nicolas Thierry-Jebali,Frédéric Cayrel,Daniel Alquier 13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.879-884, ⟨10.4028/www.scientific.net/MSF.645-648.879⟩ Communication dans un congrès hal-02864869v1

Autre publication scientifique (1)

Piégeage par implantation d'hélium : Interactions dopants/défauts F. Cayrel 2003 Autre publication scientifique hal-00722531v1