Frédéric Genty
24
Documents
Identifiants chercheurs
- frederic-genty
- IdRef : 13776670X
Présentation
Professeur à CentraleSupélec
Délégué à la Recherche du campus de Metz
Membre permanent du Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS) - Axe "Matériaux fonctionnels"
Centres d'intérêts: Matériaux pour l'Optique et la la Photonique - Composants - Systèmes
Professeur à CentraleSupélec
Délégué à la Recherche du campus de Metz
Membre permanent du Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS) - Axe "Matériaux fonctionnels"
Centres d'intérêts: Matériaux pour l'Optique et la la Photonique - Composants - Systèmes
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Application of mirage effect to methane detection at 2.3µmICPPP15, 2009, Leuven, Belgium
Communication dans un congrès
hal-01798428v1
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Paraffin oil thermal diffusivity determination using a photothermal deflection setup with a 2.3μm pump: a first step towards methane detection15th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP15), Jul 2009, Leuven, Belgium. pp.012121-1-5, ⟨10.1088/1742-6596/214/1/012121⟩
Communication dans un congrès
hal-00474038v1
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Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission directionWorkshop on Optical Measurement Techniques for Structures and Systems, 2007, Leuven, Belgium
Communication dans un congrès
hal-01827306v1
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2-2.7μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFBProceedings of SPIE - The International Society for Optical Engineering, 2006, Strasbourg, France. ⟨10.1117/12.663448⟩
Communication dans un congrès
hal-01793363v1
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2.3 um Single-mode tunable lasers in cw at RT: design and characterization8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), 2006, Cadix, Spain
Communication dans un congrès
hal-01798501v1
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2-2.7µm Single-frequency tunable Sb-based lasers operating in cw at RTPhotonics Europe (SPIE), 2006, Strasbourg, France
Communication dans un congrès
hal-01797236v1
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Quantitative thermal imaging of GalnAsSb/AlGaAsSb laser diodes by thermoreflectance13th ICPPP International Conference on Photoacoustic and Photothermal Phenomena, 2005, Rio de Janeiro, Brazil
Communication dans un congrès
hal-01793379v1
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2-3µm Single-frequency tunable Sb-based lasers operating in cw at RTInternational Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), 2005, Lancaster, United Kingdom
Communication dans un congrès
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Overview of Laser diodes (FP, QCL, DFB, and VCSEL) for trace gas analysis grown by the University of Montpellier6th international conference Tunable Diode Laser Spectroscopy (TDLS), 2005, Florence, Italy
Communication dans un congrès
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Single-frequency tunable Sb-based semiconductor lasers emitting in cw at 300K in the 2.3µm spectral rangeInternational Workshop on Stable Isotope Ratio Infrared Spectrometry (SIRIS), 2004, Vienne, Austria
Communication dans un congrès
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Quantitative thermal imaging of GaInAsSb/AlGaAsSb laser diodes by thermoreflectance13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP), 2004, Rio de Janeiro, Brazil
Communication dans un congrès
hal-01798860v1
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Recent progress on the heterostructures grown by MBE on GaSb and InAs. Overview of laser diodes (FP, QCL, DFB and VCSEL) and applications (trace gas analysis)IXèmes Journées Maghrébines sur les Sciences des Matériaux (JMSM), 2004, Oran, Algeria
Communication dans un congrès
hal-01797320v1
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Récents progrès dans les lasers à base d’antimoniures et application à la détection de traces de gazJNOG 2000, 2000, Toulouse, France
Communication dans un congrès
hal-01805172v1
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Novel GaInAsSb/GaAlAsSb Mid-Infrared Lasers Designed for Gas AnalysisCOMMAD 2000, 2000, Melbourne, Australia
Communication dans un congrès
hal-01798941v1
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Edge and vertical surface emitting lasers around 2.0-2.5µm and their applicationsSemiconductor light sources for Mid-IR applications, 2000, London, United Kingdom
Communication dans un congrès
hal-01798944v1
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Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 µmMid-IR Optoelectronics: Materials and Devices (MIOMD), 1999, Aachen, Germany
Communication dans un congrès
hal-01793950v1
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Efficient GaInSbAs/GaSb type II quantum well room temperature cw lasers3rd International Conference on Mid-infrared Optoelectronics Materials and Devices (MIOMD), 1999, Aachen, Germany
Communication dans un congrès
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