
Frédéric Genty
123
Documents
Identifiants chercheurs
Présentation
Professeur à CentraleSupélec
Délégué à la Recherche du campus de Metz
Membre permanent du Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS) - Axe "Matériaux fonctionnels"
Centres d'intérêts: Matériaux pour l'Optique et la la Photonique - Composants - Systèmes
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Publications
Influence of plasma treatments and Sn incorporation on Ga2O3 propertiesE-MRS fall meeting 2016, Sep 2016, Varsovie, Poland
Communication dans un congrès
hal-01371975
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Ga2O3 filsm alloyed with SnO2 and treated by RF plasma : an interesting way for the development of transparent contacts for UV-emitting photonics devicesInternational Conference on Fiber Optics and Photonics - PHOTONICS2016, Dec 2016, Kanpur, India. ⟨10.1364/photonics.2016.tu2d.1⟩
Communication dans un congrès
hal-01422031
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Parameter-tolerant design of high contrast gratingsPhotonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720N-93720N-8, ⟨10.1117/12.2081595⟩
Communication dans un congrès
hal-01132683
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AlGaN-based MQWs emitting at 280nm for Vertical Cavity Surface Emitting LasersConference on Lasers and Electro-Optics, Jun 2015, Munich, Germany
Communication dans un congrès
hal-01257060
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MOVPE grown periodic AlN/BAlN heterostructure with high boron contentICMOVPE, 2015, Lausanne, Switzerland
Communication dans un congrès
hal-01170572
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GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELsPhotonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720S-93720S-9, ⟨10.1117/12.2084515⟩
Communication dans un congrès
hal-01132804
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Analysis of NO2 absorption cross-sections at high temperature for the developement of post-combustion gases optical sensorIEEE Workshop on Environmental, Energy and Structural Monitoring Systems (EESMS), Jul 2015, Trento, Italy. ⟨10.1109/EESMS.2015.7175867⟩
Communication dans un congrès
hal-01257590
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Phytoplankton identification by combined methods of morphological processing and fluorescence imagingEESMS, Jul 2015, Trento, Italy. pp.131-135, ⟨10.1109/EESMS.2015.7175865⟩
Communication dans un congrès
hal-01286763
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Automatic recognition system of aquatic organisms by classical and fluorescence microscopyOptical Sensors 2015, Apr 2015, Prague, Czech Republic. pp.1-7, ⟨10.1117/12.2185055⟩
Communication dans un congrès
hal-01279497
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Technologies of oxide confinement and high contrast grating mirrors for mid-infrared VCSELsICTON 2014, Jul 2014, Graz, Austria. pp.1-4, ⟨10.1109/ICTON.2014.6876343⟩
Communication dans un congrès
hal-01108786
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Influence of RF Plasma on Zinc Oxide Surface PropertiesCompound Semiconductor Week, May 2014, Montpellier, France
Communication dans un congrès
hal-01109404
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Fluorescence imaging of plant pigments for automatical recognition of aquatic organismsConference on Optical Chemical Sensors and Biosensors 2014, Apr 2014, Athens, Greece. pp.FS-29
Communication dans un congrès
hal-01108885
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AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template17th International Conference on MetalOrganic Vapour Phase Epitaxy, Jul 2014, Lausanne, Switzerland. pp.Mon-Poster-0-28
Communication dans un congrès
hal-01108899
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BAlN thin layers for deep UV applicationsE-MRS Spring Meeting, May 2014, Lille, France. pp.14
Communication dans un congrès
hal-01109577
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MOVPE grown periodic AlN/BAlN heterostructure with high boron contentICMOVPE 2014, Jul 2014, Lausanne, Switzerland. pp.1-4
Communication dans un congrès
hal-01109542
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Influence of Al-doped ZnO Transparent Contacts Deposited by a Spray Pyrolysis Technique on Performance of HIT Solar CellsTMREES14 International ConferenceTechnologies and Materials for Renewable Energy, Environment and Sustainability, Apr 2014, Beyrouth, Lebanon. pp.853-861, ⟨10.1016/j.egypro.2014.06.104⟩
Communication dans un congrès
hal-01058674
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Traitement d'images pour la reconnaissance d'organismes aquatiques8èmes Journées "Imagerie optique non conventionnelle", GDR ISIS et Ondes, Mar 2013, Paris, France
Communication dans un congrès
hal-00924987
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Robust design for parameter tolerant GaAs High Contrast Grating mirror for mid infrared VCSEL application41st Freiburg Infrared Colloquium, Feb 2013, Freiburg, Germany
Communication dans un congrès
hal-00795962
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Suppression of Crack Generation in AlGaN/GaN Distributed Bragg Reflector Grown by MOVPEIC-MOVPE 2012, May 2012, Busan, South Korea
Communication dans un congrès
hal-00776095
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GaAs-based monolithic high contrast gratings for mid-infrared VCSELsSemiconductor and Integrated OptoElectronics 2012 (SIOE), 2012, Cardiff, United Kingdom
Communication dans un congrès
hal-01862190
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AlOx/GaAs high contrast grating mirrors for mid infrared VCSELsICTON 2012, Jul 2012, Coventry, United Kingdom. pp.1-3, ⟨10.1109/ICTON.2012.6254396⟩
Communication dans un congrès
hal-00772551
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Low Temperature Transparent ITO-based Contacts for Mid-IR Applications2011 MRS Spring Meeting and Exhibit, Apr 2011, San Francisco, United States. mrss11-1327-g09-02-s08-02 (6 p.), ⟨10.1557/opl.2011.1123⟩
Communication dans un congrès
hal-00652277
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Robust design of subwavelength grating mirror for mid-infrared VCSEL applicationNumerical Simulation of Optoelectronic Devices NUSOD 2011, Sep 2011, Rome, Italy. 2 p. - ISBN:978-1-61284-877-8, ⟨10.1109/NUSOD.2011.6041173⟩
Communication dans un congrès
hal-00628591
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Optimized GaAs High Contrast Grating Design and Fabrication for Mid-infrared Application at 2.3 μmFrontiers in Optics 2011, Oct 2011, San Jose, United States. pp.CD-ROM Proceedings
Communication dans un congrès
hal-00642181
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Optimized subwavelength grating mirror design for mid-infrared wavelength rangeINTERREG IV A NANODATA JOURNEES SUR LES NANOTECHNOLOGIES, Nov 2010, Metz, France
Communication dans un congrès
hal-00557011
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Modelling of AlN/GaN superlattices for integration in near-UV distributed Bragg reflectorsOPTO 2010 - Part of SPIE Photonics West, Jan 2010, San Francisco, United States. pp.0C, ⟨10.1117/12.842074⟩
Communication dans un congrès
hal-00461641
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Optimized sub-wavelength grating mirror design for mid-infrared wavelength rangeNANOSMAT-5, Oct 2010, Reims, France. CD-ROM, NANO-377 (3 p.)
Communication dans un congrès
hal-00537142
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Optimized sub-wavelength grating mirror design for mid infrared wavelength rangeJournées Nano, Micro et Optoélectronique, Sep 2010, Les Issambres, France
Communication dans un congrès
hal-00536555
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Mid Infrared InGaAsSb based laser for gas detectionInternational Travelling Summer School on Microwaves and Lightwaves (ITSS 2010), Jul 2010, Metz, France
Communication dans un congrès
hal-00555016
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Optimized sub-wavelength grating mirror design for mid-infrared wavelength rangeEOS Annual Meeting 2010, Oct 2010, Paris, France. pp.CD-ROM (TOM3_3493_05)
Communication dans un congrès
hal-00558012
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Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectorsSPIE Photonics Asia 2010, Oct 2010, Beijing, China. pp.0B, ⟨10.1117/12.871826⟩
Communication dans un congrès
hal-00544649
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Paraffin oil thermal diffusivity determination using a photothermal deflection setup with a 2.3μm pump: a first step towards methane detection15th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP15), Jul 2009, Leuven, Belgium. pp.012121-1-5, ⟨10.1088/1742-6596/214/1/012121⟩
Communication dans un congrès
hal-00474038
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Application of mirage effect to methane detection at 2.3µmICPPP15, 2009, Leuven, Belgium
Communication dans un congrès
hal-01798428
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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada
Communication dans un congrès
hal-01826633
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Investigation of electrical and optothermal properties of Si-doped GaSb epitaxial layers by the Hall effect, PL measurement and photothermal deflection spectroscopy11ème Journées Maghrébines des Sciences de Matériaux - JMSM 2008, Nov 2008, Hammamet, Tunisia. pp.787-795, ⟨10.1016/j.phpro.2009.11.026⟩
Communication dans un congrès
hal-00462204
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GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µmCLEO Europe - EQEC 2009, Jun 2009, Munich, Germany. pp.1-1, ⟨10.1109/CLEOE-EQEC.2009.5192675⟩
Communication dans un congrès
hal-00429890
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Monolithic, Sb-based Electrically pumped VCSELs emitting at 2.3µmIEEE IPRM 2008, 2008, Versailles, France
Communication dans un congrès
hal-01825799
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Réalisation de lasers VCSELs pompés électriquement émettant au dessus de 2.2µm en régime continu à température ambiante12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France
Communication dans un congrès
hal-01826545
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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxyInternational Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès
hal-01785734
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GaSb-based microcavity EP-VCSEL emitting above 2.2µm in CW at RTIEEE International Semiconductor Laser Conference (ISLC), 2008, Sorrento, Italy
Communication dans un congrès
hal-01825836
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Room Temperature, Sb-Based Monolithic EP-VCSEL at 2.3 µm Including 2 N-Type DBRIEEE Conference on Laser and Electro-Optics,, 2008, San Jose, United States
Communication dans un congrès
hal-01825809
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Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applicationsMIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès
hal-01785770
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Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission directionWorkshop on Optical Measurement Techniques for Structures and Systems, 2007, Leuven, Belgium
Communication dans un congrès
hal-01827306
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2-2.7μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFBProceedings of SPIE - The International Society for Optical Engineering, 2006, Strasbourg, France. ⟨10.1117/12.663448⟩
Communication dans un congrès
hal-01793363
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2.3 um Single-mode tunable lasers in cw at RT: design and characterization8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), 2006, Cadix, Spain
Communication dans un congrès
hal-01798501
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2-2.7µm Single-frequency tunable Sb-based lasers operating in cw at RTPhotonics Europe (SPIE), 2006, Strasbourg, France
Communication dans un congrès
hal-01797236
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2-3µm Single-frequency tunable Sb-based lasers operating in cw at RTInternational Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), 2005, Lancaster, United Kingdom
Communication dans un congrès
hal-01797256
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Overview of Laser diodes (FP, QCL, DFB, and VCSEL) for trace gas analysis grown by the University of Montpellier6th international conference Tunable Diode Laser Spectroscopy (TDLS), 2005, Florence, Italy
Communication dans un congrès
hal-01797293
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Quantitative thermal imaging of GalnAsSb/AlGaAsSb laser diodes by thermoreflectance13th ICPPP International Conference on Photoacoustic and Photothermal Phenomena, 2005, Rio de Janeiro, Brazil
Communication dans un congrès
hal-01793379
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Recent progress on the heterostructures grown by MBE on GaSb and InAs. Overview of laser diodes (FP, QCL, DFB and VCSEL) and applications (trace gas analysis)IXèmes Journées Maghrébines sur les Sciences des Matériaux (JMSM), 2004, Oran, Algeria
Communication dans un congrès
hal-01797320
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Single-frequency tunable Sb-based semiconductor lasers emitting in cw at 300K in the 2.3µm spectral rangeInternational Workshop on Stable Isotope Ratio Infrared Spectrometry (SIRIS), 2004, Vienne, Austria
Communication dans un congrès
hal-01797307
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Quantitative thermal imaging of GaInAsSb/AlGaAsSb laser diodes by thermoreflectance13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP), 2004, Rio de Janeiro, Brazil
Communication dans un congrès
hal-01798860
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Novel GaInAsSb/GaAlAsSb Mid-Infrared Lasers Designed for Gas AnalysisCOMMAD 2000, 2000, Melbourne, Australia
Communication dans un congrès
hal-01798941
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Récents progrès dans les lasers à base d’antimoniures et application à la détection de traces de gazJNOG 2000, 2000, Toulouse, France
Communication dans un congrès
hal-01805172
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Edge and vertical surface emitting lasers around 2.0-2.5µm and their applicationsSemiconductor light sources for Mid-IR applications, 2000, London, United Kingdom
Communication dans un congrès
hal-01798944
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Efficient GaInSbAs/GaSb type II quantum well room temperature cw lasers3rd International Conference on Mid-infrared Optoelectronics Materials and Devices (MIOMD), 1999, Aachen, Germany
Communication dans un congrès
hal-01798958
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Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 µmMid-IR Optoelectronics: Materials and Devices (MIOMD), 1999, Aachen, Germany
Communication dans un congrès
hal-01793950
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Vertical cavity structures on InP and GaSb with AlGaAsSb/AlAsSb Bragg mirrors for 1.55~μm emissionTenth International Conference on Molecular Beam Epitaxy Proceedings, 1998, Cannes, France
Communication dans un congrès
hal-01904242
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AlGaAsSb based-on Bragg mirrors and microcavities for 1.3 μm and 1.55 μm6\textsuperscripte Journées de la Matière Condensée and 17\textsuperscriptth General Conference of the Condensed Matter Division, 1998, Grenoble, France
Communication dans un congrès
hal-01904244
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AlGaAsSb/AlAsSb Bragg Mirrors on InP for 1.3 and 1.55~μm Vertical Cavity Surface Emitting LasersIEEE/LEOS Summer Topical Meeting Proceedings, 1997, Montreal, Canada
Communication dans un congrès
hal-01904246
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Croissance des antimoniures du système AlGaAsSb en accord de maille sur InP. Application aux miroirs de Bragg12\textsuperscripte Séminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France
Communication dans un congrès
hal-01904250
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First steps towards 1.3-1.55~μm antimonide vertical cavity semiconductor lasersOSA Annual Meeting Proceedings, Symposium on Advances in Vertical-Cavity Surface Lasers, 1997, Long Beach, United States
Communication dans un congrès
hal-01904245
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Miroir de Bragg AlGaAsSb/AlAsSb sur InP de pouvoir réflecteur ≥ 95% à 1,4 μmJournées Nationales de Microélectronique et Optoélectronique III-V, 1997, Chantilly, France
Communication dans un congrès
hal-01904248
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Croissance de multi-puits quantiques dans le système (Al)GaInAs sur AlGaAsSb accordé sur InPSéminaire National : Epitaxie par Jets Moléculaires, 1997, Saint-Aygulf, France
Communication dans un congrès
hal-01904251
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(Al)GaAsSb/AlAsSb Bragg mirrors for 1.5 μm useEuropean Semiconductor Laser and Amplifier Workshop, 1996, Lillehammer, Norway
Communication dans un congrès
hal-01904257
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Réalisation de miroirs de Bragg AlAsSb/GaAsSb sur InPJournées de la Matière Condensée, 1996, Orléans, France
Communication dans un congrès
hal-01904253
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Miroirs de Bragg à haut pouvoir réflecteur GaAsSb/AlAsSb pour lasers à semiconducteurs à cavité verticale émettant à 1,5 μmJournées Nationales d'Optique Guidée, 1996, Nice, France
Communication dans un congrès
hal-01904254
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Influence of plasma treatments and SnO2 alloying on the conductive properties of epitaxial Ga2O3 films deposited on C-sapphire by chemical vapor depositionCompound Semicondcutor Week 2016, Jun 2016, Toyama, Japan.
Poster de conférence
hal-01341006
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Fluorescence imaging of plant pigments for automatic recognition of aquatic organismsEuroptrode XIΙ, Apr 2014, Athènes, Greece
Poster de conférence
hal-01117174
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