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Full Professor in Université de Lorraine

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Zainuriah Hassan    Sidi Ould Saad Hamady   

Journal articles3 documents

  • Ahmad Sauffi Yusof, Sidi Ould Saad Hamady, Christyves Chevallier, Nicolas Fressengeas, Zainuriah Hassan, et al.. Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate. Materials Science in Semiconductor Processing, Elsevier, 2022, 144, pp.106614. ⟨10.1016/j.mssp.2022.106614⟩. ⟨hal-03609434⟩
  • Sauffi Bin Yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, et al.. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures. Microelectronics International, Emerald, 2021, 38 (3), pp.105-112. ⟨10.1108/MI-02-2021-0018⟩. ⟨hal-03247074⟩
  • Sidi Ould Saad Hamady, Nicolas Fressengeas, Christyves Chevallier, Queny Kieffer, Zainuriah Hassan, et al.. Development of Novel Thin Film Solar Cells: Design and Numerical Optimisation. Journal of Physical Science, Universiti Sains Malaysia, 2019, 30, pp.199 - 205. ⟨10.21315/jps2019.30.s2.17⟩. ⟨hal-02463744⟩

Conference papers1 document

  • Sidi Ould Saad Hamady, Sauffi Bin Yusof, Sourav Bose, Christyves Chevallier, Nicolas Fressengeas, et al.. Development of InGaN based solar cells: present status and challenges. 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), Dec 2020, Penang, Malaysia. ⟨hal-03248338⟩