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Full Professor in Université de Lorraine

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Way Foong Lim    Mohd Anas Ahmad    Christyves Chevallier    Sidi Ould Saad Hamady   

Journal articles1 document

  • Sauffi Bin Yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, et al.. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures. Microelectronics International, Emerald, 2021, 38 (3), pp.105-112. ⟨10.1108/MI-02-2021-0018⟩. ⟨hal-03247074⟩