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2

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Full Professor in Université de Lorraine

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Mohd Anas Ahmad    Sidi Ould Saad Hamady   

Journal articles2 documents

  • Ahmad Sauffi Yusof, Sidi Ould Saad Hamady, Christyves Chevallier, Nicolas Fressengeas, Zainuriah Hassan, et al.. Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate. Materials Science in Semiconductor Processing, 2022, 144, pp.106614. ⟨10.1016/j.mssp.2022.106614⟩. ⟨hal-03609434⟩
  • Sauffi Bin Yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, et al.. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures. Microelectronics International, 2021, 38 (3), pp.105-112. ⟨10.1108/MI-02-2021-0018⟩. ⟨hal-03247074⟩