Fuccio CRISTIANO
130
Documents
Publications
Study of the electrical and structural properties of Ru thin films annealed by Microsecond UV Laser Annealing for future BEOL interconnections2023 E-MRS Fall Meeting, Sep 2023, Warsaw, Poland
Communication dans un congrès
hal-04442370v1
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Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser2023 E-MRS Spring Meeting, May 2023, Strasbourg, France
Communication dans un congrès
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Investigation of the formation of nickel silicides on vertical silicon nanostructured channel for advanced electronicsE-MRS 2023 SPRING MEETING, May 2023, Strasbourg, France
Communication dans un congrès
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Locally Ion Implantation and Annealing Effects in DiamondE-MRS 2022 Fall Meeting., Sep 2022, Warsaw, Poland
Communication dans un congrès
hal-03766749v1
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Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin FilmsIEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩
Communication dans un congrès
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Advances in top-down fabrication and processing of vertical SiGe nanowire arrays for future nanoelectronics applicationsJ2N 2022 - Journées Nationales Nanofils semiconducteurs, Sep 2022, Nice, France
Communication dans un congrès
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Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.219-223, ⟨10.1109/SISPAD54002.2021.9592580⟩
Communication dans un congrès
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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based StudyInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.128-132, ⟨10.1109/SISPAD54002.2021.9592553⟩
Communication dans un congrès
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Stress relaxation and dopant activation in nsec laser annealed SiGeIWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩
Communication dans un congrès
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Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser AnnealingIEEE International Interconnect Technology Conference (IITC 2021), Jul 2021, Kyoto (virtual), Japan. ⟨10.1109/IITC51362.2021.9537312⟩
Communication dans un congrès
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Implant heating contribution to amorphous layer formation: a KMC approach2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.43-46, ⟨10.23919/SISPAD49475.2020.9241608⟩
Communication dans un congrès
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Undoped SiGe material calibration for numerical nanosecond laser annealing simulationsSISPAD International Conference on Simulation of Semiconductor Processes and Devices, Sep 2020, VIRTUAL CONFERENCE, Japan. ⟨10.23919/SISPAD49475.2020.9241664⟩
Communication dans un congrès
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Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩
Communication dans un congrès
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Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩
Communication dans un congrès
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Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall EffectJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
Communication dans un congrès
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Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopyMRS Fall Meeting , MRS, Nov 2017, Boston, United States
Communication dans un congrès
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Etude des défauts induits par recuit laser excimer sur silicium20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p
Communication dans un congrès
hal-01690886v1
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Differential hall characterization of shallow strained SiGe layers2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩
Communication dans un congrès
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Defect investigation of excimer laser annealed siliconIEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France
Communication dans un congrès
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Differential Hall characterisation of shallow strained SiGe layers2016 21st International Conference on Ion Implantation Technology (IIT), Sep 2016, Tainan, Taiwan
Communication dans un congrès
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High performance CMOS FDSOI devices activated at low temperature2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Communication dans un congrès
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Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
Communication dans un congrès
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On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
Communication dans un congrès
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Extended defects in ion-implanted si during nanosecond laser annealingJunction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Communication dans un congrès
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Compositional characterization of SiC-SiO2 interfaces in MOSFETs15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p
Communication dans un congrès
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Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon12th International Workshop on Junction Technology (IWJT 2012), May 2012, Shanghai, China. pp.1--7, ⟨10.1109/IWJT.2012.6212827⟩
Communication dans un congrès
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Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctionsAdvanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
Communication dans un congrès
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Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctionsSymposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩
Communication dans un congrès
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Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions2004, pp.91-102
Communication dans un congrès
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On the modelling of transient diffusion and activation of boron during post-implantation annealingInternational Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States
Communication dans un congrès
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Activation, diffusion and defect analysis of a spike anneal thermal cycleSymposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
Communication dans un congrès
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Physics-based diffusion simulations for preamorphized ultrashallow junctions2003, pp.D6.8
Communication dans un congrès
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Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TEDEuropean Materials Research Society Spring Meeting, 2003, Strasbourg, France
Communication dans un congrès
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Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon2003, pp.73
Communication dans un congrès
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Physics-based process simulation of ultrashallow junctionsUltra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States
Communication dans un congrès
hal-00146422v1
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Locally Ion Implantation and Annealing Effects in DiamondHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium
Poster de conférence
hal-04396208v1
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Locally Ion Implantation and Annealing Effects in DiamondHasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium
Poster de conférence
hal-04269992v1
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Locally Ion Implantation and Annealing Effects in Diamond3rd MOMENTOM INTERNATIONAL CONGRESS, Mar 2023, Gif-sur-yvette, France. 2023
Poster de conférence
hal-04271407v1
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Top-Down Fabrication of Vertical Nanostructured Channel Arrays on SiGe for Future Nanoelectronics ApplicationsMNE Eurosensors 2022, Sep 2022, Leuven, Belgium. 2022
Poster de conférence
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Growth and properties of GaAsBi thin layers by molecular beam epitaxyInternational Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
Poster de conférence
hal-01947425v1
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Structural, optical and spin properties of GaAsBi alloys grown on (001)GaAs substrates by molecular beam epitaxy18th EuroMBE, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01947381v1
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Spin properties of dilute bismides18th EuroMBE, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01947398v1
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Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
Poster de conférence
hal-01947354v1
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Laser annealing processes in semiconductor technologyElsevier, 426p., 2021, 9780128202555
Ouvrages
hal-03341138v1
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Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductorsLaser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555
Chapitre d'ouvrage
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A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers2018
Pré-publication, Document de travail
hal-01730674v1
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Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction propertiesMicro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013
HDR
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