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Alain Claverie
Article dans une revue
hal-01736093
v1
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Ion beam induced defects in crystalline silicon
Fuccio Cristiano
,
Nikolay Cherkashin
,
Xavier Hebras
,
P. Calvo
,
Y. Lamrani
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
Article dans une revue
istex
hal-01736101
v1
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Depth dependence of defect evolution and TED during annealing
B. Colombeau
,
N.E.B. Cowern
,
Fuccio Cristiano
,
P. Calvo
,
Y. Lamrani
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94
Article dans une revue
hal-00140976
v1
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Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Fuccio Cristiano
,
Nikolay Cherkashin
,
P. Calvo
,
Y. Lamrani
,
Xavier Hebras
et al.
Article dans une revue
istex
hal-01736096
v1
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Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution
P. Calvo
,
Alain Claverie
,
Nikolay Cherkashin
,
B. Colombeau
,
Y. Lamrani
et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩
Article dans une revue
istex
hal-01736098
v1
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Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED
E. Lampin
,
Fuccio Cristiano
,
Y. Lamrani
,
B. Colombeau
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99
Article dans une revue
hal-00140975
v1
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Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle
Silke Paul
,
Wilfried Lerch
,
Xavier Hebras
,
Nikolay Cherkashin
,
Fuccio Cristiano
Article dans une revue
hal-01736104
v1
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Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects
E. Lampin
,
Fuccio Cristiano
,
Y. Lamrani
,
Alain Claverie
,
B. Colombeau
et al.
Article dans une revue
hal-00146393
v1
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Clusters formation in ultralow-energy high-dose boron-implanted silicon
Fuccio Cristiano
,
Xavier Hebras
,
Nikolay Cherkashin
,
Alain Claverie
,
W. Lerch
et al.
Article dans une revue
hal-01736115
v1
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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon
B. Colombeau
,
N.E.B. Cowern
,
Fuccio Cristiano
,
P. Calvo
,
Nikolay Cherkashin
et al.
Article dans une revue
hal-01736110
v1
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