Fuccio CRISTIANO

133

Documents

Publications

	Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds Nicolas Mallet , Jonas Müller , Julien Pezard , Fuccio Cristiano , Raghda Makarem ACS Applied Materials & Interfaces, 2024, 16 (2), pp.2449-2456. ⟨10.1021/acsami.3c09689⟩ Journal articles hal-04639884v1
	Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework P.L. Julliard , A. Johnsson , N. Zographos , R. Demoulin , Richard Monflier Solid-State Electronics, 2023, 200, pp.108521. ⟨10.1016/j.sse.2022.108521⟩ Journal articles hal-03867418v1
	Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys Damiano Ricciarelli , Giovanni Mannino , Ioannis Deretzis , Gaetano Calogero , Giuseppe Fisicaro Materials Science in Semiconductor Processing, 2023, 165, pp.107635. ⟨10.1016/j.mssp.2023.107635⟩ Journal articles hal-04344631v1
	Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study Dima Sadek , Antoine Jay , Jihan El Hila , Quentin Gravelier , Alexandre Arnoult Applied Surface Science, 2023, 622, pp.156688. ⟨10.1016/j.apsusc.2023.156688⟩ Journal articles hal-04017077v1
	Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics Meiling Zhang , Jean-Marie Poumirol , Nicolas Chery , Hervé Rinnert , Alaa Giba Nanoscale, 2023, 15 (16), pp.7438-7449. ⟨10.1039/D3NR00035D⟩ Journal articles hal-04088288v2
	Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing Nicolas Chery , Meiling Zhang , Nicolas Mallet , Grégory Seine , Vincent Paillard Journal of Applied Physics, 2022, 131 (6), pp.014008. ⟨10.1063/5.0073827⟩ Journal articles hal-04236606v1
	Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate Aurélie Lecestre , Mickael Martin , Fuccio Cristiano , Thierry Baron , Guilhem Larrieu ACS Omega, 2022, 7, pp.5836 - 5843. ⟨10.1021/acsomega.1c05876⟩ Journal articles hal-03600996v1
	Multiscale modeling of ultrafast melting phenomena Gaetano Calogero , Domenica Raciti , Pablo Acosta , Fuccio Cristiano , Ioannis Deretzis npj Computational Materials, 2022, 8, pp.1-10. ⟨10.1038/s41524-022-00720-y⟩ Journal articles hal-03795924v1
	Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs Dima Sadek , Richard Daubriac , Corentin Durand , Richard Monflier , Quentin Gravelier Crystal Growth & Design, 2022, 22 (8), pp.5081-5091. ⟨10.1021/acs.cgd.2c00585⟩ Journal articles hal-03775836v1
	Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime Meiling Zhang , Jean-Marie Poumirol , Nicolas Chery , Clement Majorel , Rémi Demoulin Nanophotonics, 2022, 2022, pp.0283. ⟨10.1515/nanoph-2022-0283⟩ Journal articles hal-03737737v1
	Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology Daya Dhungana , Nicolas Mallet , Pier-Francesco Fazzini , Guilhem Larrieu , Fuccio Cristiano Nanotechnology, 2022, 33 (48), pp.485601. ⟨10.1088/1361-6528/ac8bdb⟩ Journal articles hal-03775839v1
	Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities Richard Monflier , Toshiyuki Tabata , Hiba Rizk , Julien Roul , Karim Huet Applied Surface Science, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩ Journal articles hal-03098053v1
	Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics Jean-Marie Poumirol , Clément Majorel , Nicolas Chery , Christian Girard , Peter Wiecha ACS photonics, 2021, 8 (5), pp.1393-1399. ⟨10.1021/acsphotonics.1c00019⟩ Journal articles hal-03040170v1
	Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate Dima Sadek , Daya S Dhungana , Roland Coratger , Corentin Durand , Arnaud Proietti ACS Applied Materials & Interfaces, 2021, 13 (30), pp.36492-36498. ⟨10.1021/acsami.1c08477⟩ Journal articles hal-03407922v1
	An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale Raghda Makarem , Fuccio Cristiano , Dominique Muller , Pier-Francesco Fazzini Microscopy and Microanalysis, 2020, 26 (1), pp.76 - 85. ⟨10.1017/s1431927619015241⟩ Journal articles hal-03097328v1
	Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers L. Dagault , S. Kerdilès , P Acosta-Alba , J.-M. Hartmann , J.-P. Barnes Applied Surface Science, 2020, 527, pp.146752. ⟨10.1016/j.apsusc.2020.146752⟩ Journal articles hal-02983939v1
	Insight of surface treatments for CMOS compatibility of InAs nanowires Daya Dhungana , Anne Hémeryck , Nicolo Sartori , Pier-Francesco Fazzini , Fuccio Cristiano Nano Research, 2019, 12, pp.581-586. ⟨10.1007/s12274-018-2257-8⟩ Journal articles hal-02017661v1
	On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon Luis Marques , María Aboy , Iván Santos , Pedro López , Fuccio Cristiano Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2019, 458, pp.179-183. ⟨10.1016/j.nimb.2018.09.030⟩ Journal articles hal-01921136v1
	Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers Léa Dagault , P. Acosta-Alba , S. Kerdiles , J. P. Barnes , J. M. Hartmann ECS Journal of Solid State Science and Technology, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩ Journal articles cea-02186445v1
	Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD Georgios Gakis , Hugues Vergnes , Fuccio Cristiano , Yann Tison , Constantin Vahlas Journal of Applied Physics, 2019, 126 (12), pp.125305. ⟨10.1063/1.5113755⟩ Journal articles hal-02396236v1
	Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium Simona Boninelli , R. Milazzo , Robert Carles , Florent Houdellier , Ray Duffy APL Materials, 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩ Journal articles hal-01796115v1
	A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers Richard Daubriac , Emmanuel Scheid , Hiba Rizk , Richard Monflier , Sylvain Joblot Beilstein Journal of Nanotechnology, 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩ Journal articles hal-01921179v1
	Phase field model of the nanoscale evolution during the explosive crystallization phenomenon S F Lombardo , S. Boninelli , Fuccio Cristiano , I. Deretzis , M.G. Grimaldi Journal of Applied Physics, 2018, 123 (10), ⟨10.1063/1.5008362⟩ Journal articles hal-01921142v1
	Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties Ahmet Lale , Emmanuel Scheid , Fuccio Cristiano , Lucien Datas , Benjamin Reig Thin Solid Films, 2018, 666, pp.20 - 27. ⟨10.1016/j.tsf.2018.09.028⟩ Journal articles hal-02043421v1
	Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches S F Lombardo , S. Boninelli , Fuccio Cristiano , G. Fisicaro , G. Fortunato Materials Science in Semiconductor Processing, 2017, 62, pp.80 - 91. ⟨10.1016/j.mssp.2016.10.047⟩ Journal articles hal-01921231v1
	Structural and mechanical characterization of hybrid metallic-inorganic nanosprings Sabrina Habtoun , Saïd Houmadi , Benjamin Reig , Emilie Pouget , Dmytro Dedovets Materials Research Express, 2017, 4 (10), ⟨10.1088/2053-1591/aa8e1a⟩ Journal articles hal-01651965v1
	Ultrafast Generation of Unconventional { 001 } Loops in Si Luis Marques , María Aboy , Iván Santos , Pedro López , Fuccio Cristiano Physical Review Letters, 2017, 119 (20), pp.205503. ⟨10.1103/physrevlett.119.205503⟩ Journal articles hal-01921215v1
	Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Zahi Essa , B. Pelletier , P. Morin , P. Boulenc , A. Pakfar Solid-State Electronics, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩ Journal articles hal-01435138v1
	Defect evolution and dopant activation in laser annealed Si and Ge Fuccio Cristiano , M. Shayesteh , R. Duffy , K. Huet , F. Mazzamuto Materials Science in Semiconductor Processing, 2016, 42, pp.188 - 195. ⟨10.1016/j.mssp.2015.09.011⟩ Journal articles hal-01921268v1
	A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices Cloud Nyamhere , A Scheinemann , A Schenk , A Scheit , François Olivie Journal of Applied Physics, 2015, 118, pp.184501. ⟨10.1063/1.4935293⟩ Journal articles hal-01921377v1
	Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs Viktoryia Uhnevionak , Alexander Burenkov , Christian Strenger , Guillermo Ortiz , Eléna Bedel-Pereira IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩ Journal articles cea-01745394v1
	Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect Guillermo Ortiz , Christian Strenger , Viktoriya Uhnevionak , A Burenkov , Anton J Bauer Applied Physics Letters, 2015, 106 (6), pp.062104. ⟨10.1063/1.4908123⟩ Journal articles hal-01659149v1
	Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices Anna Maria Beltrán , Sébastien Duguay , Christian Strenger , Anton J Bauer , Fuccio Cristiano Solid State Communications, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩ Journal articles hal-01720451v1
	Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation Viktoryia Uhnevionak , Alex Burenkov , Christian Strenger , Guillermo Ortiz , Vincent Mortet Materials Science Forum, 2015, 821-823, pp.737 - 740. ⟨10.4028/www.scientific.net/msf.821-823.737⟩ Journal articles hal-01921384v1
	Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs Christian Strenger , Viktoryia Uhnevionak , Vincent Mortet , Guillermo Ortiz , Tobias Erlbacher Materials Science Forum, 2014, 778-780, pp.583 - 586. ⟨10.4028/www.scientific.net/msf.778-780.583⟩ Journal articles hal-01921817v1
	Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current Maryam Shayesteh , Dan O' Connell , Farzan Gity , Philip Murphy-Armando , Ran Yu IEEE Transactions on Electron Devices, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩ Journal articles hal-01921394v1
	The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys Larbi Laânab , Amine Belafhaili , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie physica status solidi (c), 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩ Journal articles hal-01719497v1
	Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩ Journal articles hal-01659180v1
	Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs Viktoryia Uhnevionak , Alex Burenkov , Christian Strenger , Vincent Mortet , Eléna Bedel-Pereira Materials Science Forum, 2014, 778-780, pp.483 - 486. ⟨10.4028/www.scientific.net/msf.778-780.483⟩ Journal articles hal-01921813v1
	Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing Giuseppe Fisicaro , Lourdes Pelaz , Maria Aboy , Pedro Lopez , Markus Italia Applied Physics Express, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩ Journal articles hal-01921825v1
	Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers François-Xavier Darras , Nikolay Cherkashin , Fuccio Cristiano , Emmanuel Scheid , Oleg Kononchuk Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩ Journal articles hal-01719500v1
	Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect Guillermo Ortiz , Vincent Mortet , Chrisitan Strenger , Viktoryia Uhnevionak , Alexander Burenkov Materials Science Forum, 2014, 806, pp.127 - 132. ⟨10.4028/www.scientific.net/msf.806.127⟩ Journal articles hal-01921388v1
	Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation A. Belafhaili , L. Laânab , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩ Journal articles hal-01736024v1
	Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si Cloud Nyamhere , Fuccio Cristiano , François Olivie , Z. Essa , Eléna Bedel-Pereira Journal of Applied Physics, 2013, 113 (18), pp.184508 Journal articles hal-01921870v1
	Extended defects and precipitation in heavily B-doped silicon O. Cojocaru-Mirédin , Fuccio Cristiano , Pier-Francesco Fazzini , Dominique Mangelinck , D. Blavette Thin Solid Films, 2013, 534, pp.62 - 66. ⟨10.1016/j.tsf.2013.01.090⟩ Journal articles hal-01921833v1
	Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets Viktoryia Uhnevionak , Christian Strenger , Alex Burenkov , Vincent Mortet , Eléna Bedel-Pereira Materials Science Forum, 2013, 740-742, pp.533 - 536. ⟨10.4028/www.scientific.net/msf.740-742.533⟩ Journal articles hal-01921843v1
	Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets Christian Strenger , Viktoryia Uhnevionak , Alex Burenkov , Anton J Bauer , Vincent Mortet Materials Science Forum, 2013, 740-742, pp.537 - 540. ⟨10.4028/www.scientific.net/msf.740-742.537⟩ Journal articles hal-01921853v1
	Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation V. Mortet , Eléna Bedel-Pereira , Jean-François Bobo , Fuccio Cristiano , Christian Strenger Materials Science Forum, 2013, 740-742, pp.525 - 528. ⟨10.4028/www.scientific.net/msf.740-742.525⟩ Journal articles hal-01921860v1
	Role of the Ge surface during the end of range dissolution S. Boninelli , G. Impellizzeri , A. Alberti , F. Priolo , Fuccio Cristiano Applied Physics Letters, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩ Journal articles hal-01921897v1
	Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs C. Strenger , V. Haeublein , T. Enbacher , A. J. Bauer , H. Ryssel Materials Science Forum, 2012, 717-720, pp.437-440. ⟨10.4028/www.scientific.net/MSF.717-720.437⟩ Journal articles hal-01745018v1
	Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs Anna Maria Beltrán , Sylvie Schamm-Chardon , Vincent Mortet , Matthieu Lefebvre , Eléna Bedel-Pereira Materials Science Forum, 2012, 711, pp.134-138. ⟨10.4028/www.scientific.net/MSF.711.134⟩ Journal articles hal-01745014v1
	Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks Zahi Essa , Clement Gaumer , Ardechir Pakfar , Mickael Gros-Jean , Marc Juhel Applied Physics Letters, 2012, 101 (18), pp.182901. ⟨10.1063/1.4764558⟩ Journal articles hal-01921905v1
	Studies of implanted boron emitters for solar cell applications B J Pawlak , T. Janssens , S. Singh , I. Kuzma-Filipek , J. Robbelein Progress in Photovoltaics, 2012, 20 (1), pp.106 - 110. ⟨10.1002/pip.1106⟩ Journal articles hal-01922649v1
	Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation W. Lerch , W. Kegel , J. Niess , A. Gschwandtner , J. Gelpey ECS Transactions, 2012, 45 (6), pp.151 - 161. ⟨10.1149/1.3700948⟩ Journal articles hal-01922632v1
	Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts X.-L. Han , Guilhem Larrieu , Emmanuel Dubois , Fuccio Cristiano Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (9-10), pp.836 - 839. ⟨10.1016/j.susc.2012.01.021⟩ Journal articles hal-01921880v1
	Overlayer stress effects on defect formation in Si and Ge Nick E B Cowern , Nick S Bennett , Chihak Ahn , Joo Chul Yoon , Silke Hamm Thin Solid Films, 2010, 518 (9), pp.2442 - 2447. ⟨10.1016/j.tsf.2009.09.142⟩ Journal articles hal-01922665v1
	Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator E. M Bazizi , P F Fazzini , A. Pakfar , C. Tavernier , B. Vandelle Journal of Applied Physics, 2010, 107 (7), pp.074503. ⟨10.1063/1.3369160⟩ Journal articles hal-01922894v1
	Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions Fabrice Severac , Fuccio Cristiano , Eléna Bedel-Pereira , Pier Francesco Fazzini , Jonathan Boucher Journal of Applied Physics, 2010, 107 (12), pp.123711. ⟨10.1063/1.3446844⟩ Journal articles hal-01922687v1
	End-of-range defects in germanium and their role in boron deactivation F. Panciera , P F Fazzini , M. Collet , J. Boucher , Eléna Bedel-Pereira Applied Physics Letters, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩ Journal articles hal-01922899v1
	Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs E. M Bazizi , A. Pakfar , P F Fazzini , Fuccio Cristiano , C. Tavernier Thin Solid Films, 2010, 518 (9), pp.2427 - 2430. ⟨10.1016/j.tsf.2009.09.141⟩ Journal articles hal-01922678v1
	Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium Pier-Francesco Fazzini , Fuccio Cristiano , Etienne Talbot , Gérard Benassayag , S. Paul Thin Solid Films, 2010, 518 (9), pp.2338 - 2341. ⟨10.1016/j.tsf.2009.09.172⟩ Journal articles hal-01633467v1
	Direct imaging of boron segregation to extended defects in silicon Sébastien Duguay , Thomas Philippe , Fuccio Cristiano , D. Blavette Applied Physics Letters, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩ Journal articles hal-01922903v1
	Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate Sébastien Duguay , M. Ngamo , P. F Fazzini , Fuccio Cristiano , K. Daoud Thin Solid Films, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩ Journal articles hal-01922657v1
	Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation V. Vervisch , Yannick Larmande , Philippe Delaporte , Thierry Sarnet , Marc Sentis Applied Surface Science, 2009, 255 (10), pp.5647-5650 Journal articles hal-00542699v1
	Formation and evolution of F nanobubbles in amorphous and crystalline Si S. Boninelli , G. Impellizzeri , S. Mirabella , F. Priolo , E. Napolitani Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩ Journal articles hal-01736061v1
	Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films C. Dupré , T. Ernst , J.-M. Hartmann , F. Andrieu , J.-P. Barnes Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8 Journal articles hal-00393080v1
	Defects evolution and dopant activation anomalies in ion implanted silicon Fuccio Cristiano , Y. Lamrani , F. Severac , M. Gavelle , S. Boninelli Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩ Journal articles hal-01736079v1
	Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩ Journal articles hal-01736073v1
	Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩ Journal articles hal-01736076v1
	Diffusion and activation of dopants in silicon and advanced silicon-based materials P. Pichler , C.J. Ortiz , B. Colombeau , N.E.B. Cowern , E. Lampin Physica Scripta, 2006, T126, pp.89-96 Journal articles hal-00138673v1
	Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si E. Lampin , C.J. Ortiz , N.E.B. Cowerne , B. Colombeau , Fuccio Cristiano Solid-State Electronics, 2005, 49, pp.1168-1171 Journal articles hal-00138394v1
	Structure determination of clusters formed in ultra-low energy high-dose implanted silicon Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩ Journal articles hal-01736085v1
	Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩ Journal articles hal-01736089v1
	Optimisation of the parameters of an extended defect model applied to non-amorphizing implants E. Lampin , Fuccio Cristiano , Youness Lamrani , Damien Connétable Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩ Journal articles hal-03599806v1
	Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions Fuccio Cristiano , Nikolay Cherkashin , P. Calvo , Y. Lamrani , Xavier Hebras Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩ Journal articles hal-01736096v1
	Depth dependence of defect evolution and TED during annealing B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94 Journal articles hal-00140976v1
	Ion beam induced defects in crystalline silicon Fuccio Cristiano , Nikolay Cherkashin , Xavier Hebras , P. Calvo , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩ Journal articles hal-01736101v1
	On the “Life” of {113} Defects Nikolay Cherkashin , P. Calvo , Fuccio Cristiano , B. de Mauduit , Alain Claverie MRS Proceedings, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩ Journal articles hal-01736093v1
	Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution P. Calvo , Alain Claverie , Nikolay Cherkashin , B. Colombeau , Y. Lamrani Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩ Journal articles hal-01736098v1
	Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano MRS Proceedings, 2004, 810, ⟨10.1557/proc-810-c5.4⟩ Journal articles hal-01736104v1
	Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED E. Lampin , Fuccio Cristiano , Y. Lamrani , B. Colombeau Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99 Journal articles hal-00140975v1
	Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Nikolay Cherkashin Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩ Journal articles hal-01736110v1
	Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects E. Lampin , Fuccio Cristiano , Y. Lamrani , Alain Claverie , B. Colombeau Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩ Journal articles hal-00146393v1
	Clusters formation in ultralow-energy high-dose boron-implanted silicon Fuccio Cristiano , Xavier Hebras , Nikolay Cherkashin , Alain Claverie , W. Lerch Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩ Journal articles hal-01736115v1

	Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials Jonas Müller , Nicolas Mallet , Rémi Demoulin , Leonardo Cancellara , Aurélie Lecestre E-MRS Fall 2024, Sep 2024, Warsaw, Poland Conference papers hal-04714304v1
	Study of the electrical and structural properties of Ru thin films annealed by Microsecond UV Laser Annealing for future BEOL interconnections Richard Daubriac , Leonardo Cancellara , Mohamed Ali Khaled , Lu Lu , Zeinab Chehadi 2023 E-MRS Fall Meeting, Sep 2023, Warsaw, Poland Conference papers hal-04442370v1
	Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser Richard Daubriac , Rémi Demoulin , Sébastien Kerdilès , P. Acosta-Alba , M. Opprecht 2023 E-MRS Spring Meeting, May 2023, Strasbourg, France Conference papers hal-04442327v1
	Locally ion Implantation and annealing effects in Diamond Mohamed Bourass , Raid Gourad , Karine Isoird , Fuccio Cristiano , Josiane Tasselli European Materials Research Society (EMRS) Spring Meeting, Symposium R (Diamond for electronics, sensors and detectors V), May 2023, Strasbourg, France Conference papers hal-04666590v1
	Investigation of the formation of nickel silicides on vertical silicon nanostructured channel for advanced electronics Jonas Müller , Rémi Demoulin , Fuccio Cristiano , Guilhem Larrieu E-MRS 2023 SPRING MEETING, May 2023, Strasbourg, France Conference papers hal-04423814v1
	Advances in top-down fabrication and processing of vertical SiGe nanowire arrays for future nanoelectronics applications Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J. M. Hartmann J2N 2022 - Journées Nationales Nanofils semiconducteurs, Sep 2022, Nice, France Conference papers hal-03771519v1
	Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films Rémi Demoulin , Richard Daubriac , Louis Thuries , Emmanuel Scheid , Fabien Rozé IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩ Conference papers hal-03795894v1
	Locally Ion Implantation and Annealing Effects in Diamond Raid. Gourad , Mohamed Bouras , Karine Isoird , Josiane Tasselli , Fuccio Cristiano E-MRS 2022 Fall Meeting., Sep 2022, Warsaw, Poland Conference papers hal-03766749v1
	Top-Down Fabrication of Vertical Nanostructured Channel Arrays on SiGe for Future Nanoelectronics Applications Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J. M. Hartmann MNE Eurosensors 2022, Sep 2022, Leuven, Belgium Conference papers hal-03771503v1
	Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study Antoine Jay , Anne Hémeryck , Fuccio Cristiano , Denis Rideau , Pierre-Louis Julliard International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.128-132, ⟨10.1109/SISPAD54002.2021.9592553⟩ Conference papers hal-03366621v1
	Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2 Pierre-Louis Julliard , Antoine Jay , Miha Gunde , Nicolas Salles , Frederic Monsieur International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.219-223, ⟨10.1109/SISPAD54002.2021.9592580⟩ Conference papers hal-03366600v1
	Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing Toshiyuki Tabata , Pierre - Edouard Raynal , Fabien Rozé , Sébastien Halty , Louis Thuries IEEE International Interconnect Technology Conference (IITC 2021), Jul 2021, Kyoto (virtual), Japan. ⟨10.1109/IITC51362.2021.9537312⟩ Conference papers hal-03412643v1
	Stress relaxation and dopant activation in nsec laser annealed SiGe Fuccio Cristiano , Richard Monflier , Richard Daubriac , Rémi Demoulin , Emmanuel Scheid IWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩ Conference papers hal-03449341v1
	Implant heating contribution to amorphous layer formation: a KMC approach P.L. Julliard , P. Dumas , F. Monsieur , F. Hilario , D. Rideau 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.43-46, ⟨10.23919/SISPAD49475.2020.9241608⟩ Conference papers hal-03095123v1
	Undoped SiGe material calibration for numerical nanosecond laser annealing simulations Anne-Sophie Royet , L. Dagault , Sebastien Kerdiles , Pablo Acosta Alba , J.P P Barnes SISPAD International Conference on Simulation of Semiconductor Processes and Devices, Sep 2020, VIRTUAL CONFERENCE, Japan. ⟨10.23919/SISPAD49475.2020.9241664⟩ Conference papers hal-03097960v1
	Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures A-S. Royet , S. Kerdiles , P. Acosta Alba , Caroline Bonafos , Vincent Paillard 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩ Conference papers hal-02392503v1
	Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization Richard Monflier , Hiba Rizk , Toshiyuki Tabata , Julien Roul , Simona Boninelli 22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩ Conference papers hal-01803955v2
	Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect Richard Daubriac , Emmanuel Scheid , S. Joblot , R. Beneyton , P Acosta Alba Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain Conference papers hal-01735436v1
	Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy Richard Monflier , Toshiyuki Tabata , Mégane Turpin , Amin Benyoucef , Fuccio Cristiano MRS Fall Meeting , MRS, Nov 2017, Boston, United States Conference papers hal-01555348v1
	Etude des défauts induits par recuit laser excimer sur silicium Richard Monflier , Amin Benyoucef , Mégane Turpin , Fuccio Cristiano , Eléna Bedel-Pereira 20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p Conference papers hal-01690886v1
	Differential hall characterization of shallow strained SiGe layers Richard Daubriac , Mahmoud Abou Daher , Emmanuel Scheid , Fuccio Cristiano , S. Joblot 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩ Conference papers hal-01730652v1
	High performance CMOS FDSOI devices activated at low temperature L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩ Conference papers hal-01730659v1
	Differential Hall characterisation of shallow strained SiGe layers R Daubriac , M Abou Daher , E. Scheid , S. Joblot , D Barge 2016 21st International Conference on Ion Implantation Technology (IIT), Sep 2016, Tainan, Taiwan Conference papers hal-01730666v1
	Defect investigation of excimer laser annealed silicon Richard Monflier , Toshiyuki Tabata , Fuccio Cristiano , Inès Toque-Tresonne , Fulvio Mazzamuto IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France Conference papers hal-01343978v3
	Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys Hélène Carrère , Aurélien Kuck , Hajer Makhloufi , Poonyasiri Boonpeng , Alexandre Arnoult 6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States Conference papers hal-01947411v1
	On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing Alexandre Arnoult , Aurélien Kuck , Hajer Makhloufi , Poonyasiri Boonpeng , Simone Mazzucato 5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland Conference papers hal-01947318v1
	Extended defects in ion-implanted si during nanosecond laser annealing Fuccio Cristiano , Y. Qiu , Eléna Bedel-Pereira , Karim Huet , Fulvio Mazzamuto Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩ Conference papers hal-01721156v1
	Compositional characterization of SiC-SiO2 interfaces in MOSFETs Anna Maria Beltrán , Sylvie Schamm-Chardon , Vincent Mortet , Eléna Bedel-Pereira , Fuccio Cristiano 15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p Conference papers hal-00720226v1
	Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon Fuccio Cristiano , Zahi Essa , Yang Qiul , Yohann Spiegel , Frank Torregrosa 12th International Workshop on Junction Technology (IWJT 2012), May 2012, Shanghai, China. pp.1--7, ⟨10.1109/IWJT.2012.6212827⟩ Conference papers hal-01928869v1
	Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions R. El Farhane , C. Laviron , Fuccio Cristiano , Nikolay Cherkashin , P. Morin Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩ Conference papers hal-01736099v1
	Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105 Conference papers hal-01736100v1
	Activation, diffusion and defect analysis of a spike anneal thermal cycle Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩ Conference papers hal-01736106v1
	Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions Bernard Colombeau , A. Smith , N.E.B. Cowern , B. Pawlak , Fuccio Cristiano 2004, pp.91-102 Conference papers hal-00140989v1
	On the modelling of transient diffusion and activation of boron during post-implantation annealing P. Pichler , C.J. Ortiz , B. Colombeau , N.E.B. Cowern , E. Lampin International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States Conference papers hal-00141013v1
	Physics-based process simulation of ultrashallow junctions N.E.B. Cowern , B. Colombeau , R. Duffy , V. Venezia , C. Dachs Ultra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States Conference papers hal-00146422v1
	Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon Alain Claverie , Fuccio Cristiano , B. Colombeau , Xavier Hebras , P. Calvo 2003, pp.73 Conference papers hal-00146421v1
	Physics-based diffusion simulations for preamorphized ultrashallow junctions N.E.B. Cowern , B. Colombeau , E. Lampin , Fuccio Cristiano , Alain Claverie 2003, pp.D6.8 Conference papers hal-00146407v1
	Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED E. Lampin , Fuccio Cristiano , Y. Lamrani , Bernard Colombeau European Materials Research Society Spring Meeting, 2003, Strasbourg, France Conference papers hal-00146423v1

	Locally Ion Implantation and Annealing Effects in Diamond Mohamed Bouras , Raid Gourad , Karine Isoird , Fuccio Cristiano , Josiane Tasselli Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium Conference poster hal-04396208v1
	Locally Ion Implantation and Annealing Effects in Diamond Mohamed Bouras , Raid Gourad , Karine Isoird , Fuccio Cristiano , Josiane Tasselli Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium Conference poster hal-04269992v1
	Locally Ion Implantation and Annealing Effects in Diamond M.A. Pinault-Thaury , Mohamed Bouras , Raid Gourad , Karine Isoird , Fuccio Cristiano 3rd MOMENTOM INTERNATIONAL CONGRESS, Mar 2023, Gif-sur-yvette, France. 2023 Conference poster hal-04271407v1
	Growth and properties of GaAsBi thin layers by molecular beam epitaxy Chantal Fontaine , Alexandre Arnoult , Fuccio Cristiano , Hélène Carrère , Sawsen Azaizia International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016 Conference poster hal-01947425v1
	Structural, optical and spin properties of GaAsBi alloys grown on (001)GaAs substrates by molecular beam epitaxy Chantal Fontaine , Alexandre Arnoult , Patchareewan Prongjit , Simone Mazzucato , Hélène Carrère 18th EuroMBE, Mar 2015, Canazei, Italy. 2015 Conference poster hal-01947381v1
	Spin properties of dilute bismides Alexandre Arnoult , Aurélien Kuck , Hajer Makhloufi , Poonyasiri Boonpeng , Simone Mazzucato 18th EuroMBE, Mar 2015, Canazei, Italy. 2015 Conference poster hal-01947398v1
	Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster) Hajer Makhloufi , Poonyasiri Boonpeng , Simone Mazzucato , Hélène Carrère , Tiantian Zhang 18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014 Conference poster hal-01947354v1

	Laser annealing processes in semiconductor technology Fuccio Cristiano , Antonino La Magna Elsevier, 426p., 2021, 9780128202555 Books hal-03341138v1

	Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors Ray Duffy , Enrico Napolitani , Fuccio Cristiano Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555 Book sections hal-03341171v1

	A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers Richard Daubriac , Emmanuel Scheid , S. Joblot , R. Beneyton , P Acosta Alba 2018 Preprints, Working Papers, ... hal-01730674v1

	Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties Fuccio Cristiano Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013 Habilitation à diriger des recherches tel-00919958v1

Fuccio CRISTIANO

Publications

Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds

Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study

Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

Multiscale modeling of ultrafast melting phenomena

Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs

Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime

Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology

Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities

Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers

Insight of surface treatments for CMOS compatibility of InAs nanowires

On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers

Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties

Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches

Structural and mechanical characterization of hybrid metallic-inorganic nanosprings

Ultrafast Generation of Unconventional { 001 } Loops in Si

Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

Defect evolution and dopant activation in laser annealed Si and Ge

A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices

Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si

Extended defects and precipitation in heavily B-doped silicon

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

Role of the Ge surface during the end of range dissolution

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Studies of implanted boron emitters for solar cell applications

Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts

Overlayer stress effects on defect formation in Si and Ge

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

End-of-range defects in germanium and their role in boron deactivation

Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs

Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

Direct imaging of boron segregation to extended defects in silicon

Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation

Formation and evolution of F nanobubbles in amorphous and crystalline Si

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

Defects evolution and dopant activation anomalies in ion implanted silicon

Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects

Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

Diffusion and activation of dopants in silicon and advanced silicon-based materials

Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Depth dependence of defect evolution and TED during annealing

Ion beam induced defects in crystalline silicon

On the “Life” of {113} Defects