Fuccio CRISTIANO

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Evolution of the liquid/solid interface roughness in Si$_{1-x}$Ge$_x$ layers processed by nanosecond laser annealing

R. Demoulin , Richard Daubriac , S. Kerdilès , L. Dagault , O. Adami et al.
Applied Surface Science, 2025, 684, pp.161982. ⟨10.1016/j.apsusc.2024.161982⟩
Article dans une revue hal-04821556 v1

Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation

Damiano Ricciarelli , Jonas Müller , Guilhem Larrieu , Ioannis Deretzis , Gaetano Calogero et al.
Physica Status Solidi A (applications and materials science), 2024, 221 (24), pp.2400120. ⟨10.1002/pssa.202400120⟩
Article dans une revue cea-04769530 v1
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Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds

Nicolas Mallet , Jonas Müller , Julien Pezard , Fuccio Cristiano , Raghda Makarem et al.
ACS Applied Materials & Interfaces, 2024, 16 (2), pp.2449-2456. ⟨10.1021/acsami.3c09689⟩
Article dans une revue hal-04639884 v1
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Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Damiano Ricciarelli , Giovanni Mannino , Ioannis Deretzis , Gaetano Calogero , Giuseppe Fisicaro et al.
Materials Science in Semiconductor Processing, 2023, 165, pp.107635. ⟨10.1016/j.mssp.2023.107635⟩
Article dans une revue hal-04344631 v1
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Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework

P.L. Julliard , A. Johnsson , N. Zographos , R. Demoulin , Richard Monflier et al.
Solid-State Electronics, 2023, 200, pp.108521. ⟨10.1016/j.sse.2022.108521⟩
Article dans une revue hal-03867418 v1
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β‐Disubstituted Pentacene Derivatives: Thin Film Structural Properties and Four‐Probe Field Effect Mobility

Mouaad‐yassine Aliouat , Filadelfo Cristiano , Lydia Abbassi , Stéphanie Escoubas , Fabien Mesnilgrente et al.
ChemPlusChem, 2023, 89 (4), ⟨10.1002/cplu.202300611⟩
Article dans une revue hal-04742937 v1
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Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics

Meiling Zhang , Jean-Marie Poumirol , Nicolas Chery , Hervé Rinnert , Alaa Giba et al.
Nanoscale, 2023, 15 (16), pp.7438-7449. ⟨10.1039/D3NR00035D⟩
Article dans une revue hal-04088288 v2
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Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study

Dima Sadek , Antoine Jay , Jihan El Hila , Quentin Gravelier , Alexandre Arnoult et al.
Applied Surface Science, 2023, 622, pp.156688. ⟨10.1016/j.apsusc.2023.156688⟩
Article dans une revue hal-04017077 v1
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Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs

Dima Sadek , Richard Daubriac , Corentin Durand , Richard Monflier , Quentin Gravelier et al.
Crystal Growth & Design, 2022, 22 (8), pp.5081-5091. ⟨10.1021/acs.cgd.2c00585⟩
Article dans une revue hal-03775836 v1

Engineering of dense arrays of Vertical Si 1-x Ge x nanostructures

Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J-M Hartmann et al.
Nanotechnology, 2022, 34 (10), pp.105303. ⟨10.1088/1361-6528/aca419⟩
Article dans une revue hal-04714277 v1
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Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

Aurélie Lecestre , Mickael Martin , Fuccio Cristiano , Thierry Baron , Guilhem Larrieu
ACS Omega, 2022, 7, pp.5836 - 5843. ⟨10.1021/acsomega.1c05876⟩
Article dans une revue hal-03600996 v1
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Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Nicolas Chery , Meiling Zhang , Nicolas Mallet , Grégory Seine , Vincent Paillard et al.
Journal of Applied Physics, 2022, 131 (6), pp.014008. ⟨10.1063/5.0073827⟩
Article dans une revue hal-04236606 v1
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Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime

Meiling Zhang , Jean-Marie Poumirol , Nicolas Chery , Clement Majorel , Rémi Demoulin et al.
Nanophotonics, 2022, 2022, pp.0283. ⟨10.1515/nanoph-2022-0283⟩
Article dans une revue hal-03737737 v1
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Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology

Daya Dhungana , Nicolas Mallet , Pier-Francesco Fazzini , Guilhem Larrieu , Fuccio Cristiano et al.
Nanotechnology, 2022, 33 (48), pp.485601. ⟨10.1088/1361-6528/ac8bdb⟩
Article dans une revue hal-03775839 v1
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Multiscale modeling of ultrafast melting phenomena

Gaetano Calogero , Domenica Raciti , Pablo Acosta , Fuccio Cristiano , Ioannis Deretzis et al.
npj Computational Materials, 2022, 8, pp.1-10. ⟨10.1038/s41524-022-00720-y⟩
Article dans une revue hal-03795924 v1
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Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Dima Sadek , Daya S Dhungana , Roland Coratger , Corentin Durand , Arnaud Proietti et al.
ACS Applied Materials & Interfaces, 2021, 13 (30), pp.36492-36498. ⟨10.1021/acsami.1c08477⟩
Article dans une revue hal-03407922 v1
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Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics

Jean-Marie Poumirol , Clément Majorel , Nicolas Chery , Christian Girard , Peter Wiecha et al.
ACS photonics, 2021, 8 (5), pp.1393-1399. ⟨10.1021/acsphotonics.1c00019⟩
Article dans une revue hal-03040170 v1
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Investigation of oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities

Richard Monflier , Toshiyuki Tabata , Hiba Rizk , Julien Roul , Karim Huet et al.
Applied Surface Science, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩
Article dans une revue hal-03098053 v1
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Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers

L. Dagault , S. Kerdilès , P Acosta-Alba , J.-M. Hartmann , J.-P. Barnes et al.
Applied Surface Science, 2020, 527, pp.146752. ⟨10.1016/j.apsusc.2020.146752⟩
Article dans une revue hal-02983939 v1
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An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale

Raghda Makarem , Fuccio Cristiano , Dominique Muller , Pier-Francesco Fazzini
Microscopy and Microanalysis, 2020, 26 (1), pp.76 - 85. ⟨10.1017/s1431927619015241⟩
Article dans une revue hal-03097328 v1

Insight of surface treatments for CMOS compatibility of InAs nanowires

Daya Dhungana , Anne Hémeryck , Nicolo Sartori , Pier-Francesco Fazzini , Fuccio Cristiano et al.
Nano Research, 2019, 12, pp.581-586. ⟨10.1007/s12274-018-2257-8⟩
Article dans une revue hal-02017661 v1

On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon

Luis Marques , María Aboy , Iván Santos , Pedro López , Fuccio Cristiano et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2019, 458, pp.179-183. ⟨10.1016/j.nimb.2018.09.030⟩
Article dans une revue hal-01921136 v1

Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

Léa Dagault , P. Acosta-Alba , S. Kerdiles , J. P. Barnes , J. M. Hartmann et al.
ECS Journal of Solid State Science and Technology, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩
Article dans une revue cea-02186445 v1
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Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD

Giorgos Gakis , Hugues Vergnes , Fuccio Cristiano , Yann Tison , Constantin Vahlas et al.
Journal of Applied Physics, 2019, 126 (12), pp.125305. ⟨10.1063/1.5113755⟩
Article dans une revue hal-02396236 v1
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Phase field model of the nanoscale evolution during the explosive crystallization phenomenon

S F Lombardo , S. Boninelli , Fuccio Cristiano , I. Deretzis , M.G. Grimaldi et al.
Journal of Applied Physics, 2018, 123 (10), ⟨10.1063/1.5008362⟩
Article dans une revue hal-01921142 v1
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Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

Simona Boninelli , R. Milazzo , Robert Carles , Florent Houdellier , Ray Duffy et al.
APL Materials, 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩
Article dans une revue hal-01796115 v1
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Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties

Ahmet Lale , Emmanuel Scheid , Fuccio Cristiano , Lucien Datas , Benjamin Reig et al.
Thin Solid Films, 2018, 666, pp.20 - 27. ⟨10.1016/j.tsf.2018.09.028⟩
Article dans une revue hal-02043421 v1
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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers

Richard Daubriac , Emmanuel Scheid , Hiba Rizk , Richard Monflier , Sylvain Joblot et al.
Beilstein Journal of Nanotechnology, 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩
Article dans une revue hal-01921179 v1

Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches

S F Lombardo , S. Boninelli , Fuccio Cristiano , G. Fisicaro , G. Fortunato et al.
Materials Science in Semiconductor Processing, 2017, 62, pp.80 - 91. ⟨10.1016/j.mssp.2016.10.047⟩
Article dans une revue hal-01921231 v1
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Ultrafast Generation of Unconventional { 001 } Loops in Si

Luis Marques , María Aboy , Iván Santos , Pedro López , Fuccio Cristiano et al.
Physical Review Letters, 2017, 119 (20), pp.205503. ⟨10.1103/physrevlett.119.205503⟩
Article dans une revue hal-01921215 v1
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Structural and mechanical characterization of hybrid metallic-inorganic nanosprings

Sabrina Habtoun , Saïd Houmadi , Benjamin Reig , Emilie Pouget , Dmytro Dedovets et al.
Materials Research Express, 2017, 4 (10), ⟨10.1088/2053-1591/aa8e1a⟩
Article dans une revue hal-01651965 v1

Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors

Zahi Essa , B. Pelletier , P. Morin , P. Boulenc , A. Pakfar et al.
Solid-State Electronics, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩
Article dans une revue hal-01435138 v1

Defect evolution and dopant activation in laser annealed Si and Ge

Fuccio Cristiano , M. Shayesteh , R. Duffy , K. Huet , F. Mazzamuto et al.
Materials Science in Semiconductor Processing, 2016, 42, pp.188 - 195. ⟨10.1016/j.mssp.2015.09.011⟩
Article dans une revue hal-01921268 v1
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Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Guillermo Ortiz , Christian Strenger , Viktoriya Uhnevionak , A Burenkov , Anton J Bauer et al.
Applied Physics Letters, 2015, 106 (6), pp.062104. ⟨10.1063/1.4908123⟩
Article dans une revue hal-01659149 v1

Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

Viktoryia Uhnevionak , Alex Burenkov , Christian Strenger , Guillermo Ortiz , Vincent Mortet et al.
Materials Science Forum, 2015, 821-823, pp.737 - 740. ⟨10.4028/www.scientific.net/msf.821-823.737⟩
Article dans une revue hal-01921384 v1

Atomic scale characterization of SiO<inf>2</inf>/4H-SiC interfaces in MOSFETs devices

Anna Maria Beltrán , Sébastien Duguay , Christian Strenger , Anton J Bauer , Fuccio Cristiano et al.
Solid State Communications, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩
Article dans une revue hal-01720451 v1

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Viktoryia Uhnevionak , Alexander Burenkov , Christian Strenger , Guillermo Ortiz , Eléna Bedel-Pereira et al.
IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩
Article dans une revue cea-01745394 v1
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A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices

Cloud Nyamhere , A Scheinemann , A Schenk , A Scheit , François Olivie et al.
Journal of Applied Physics, 2015, 118, pp.184501. ⟨10.1063/1.4935293⟩
Article dans une revue hal-01921377 v1
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro et al.
Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩
Article dans une revue hal-01659180 v1

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

Viktoryia Uhnevionak , Alex Burenkov , Christian Strenger , Vincent Mortet , Eléna Bedel-Pereira et al.
Materials Science Forum, 2014, 778-780, pp.483 - 486. ⟨10.4028/www.scientific.net/msf.778-780.483⟩
Article dans une revue hal-01921813 v1

The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys

Larbi Laânab , Amine Belafhaili , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie
Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩
Article dans une revue istex hal-01719497 v1

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Christian Strenger , Viktoryia Uhnevionak , Vincent Mortet , Guillermo Ortiz , Tobias Erlbacher et al.
Materials Science Forum, 2014, 778-780, pp.583 - 586. ⟨10.4028/www.scientific.net/msf.778-780.583⟩
Article dans une revue hal-01921817 v1

Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

Guillermo Ortiz , Vincent Mortet , Chrisitan Strenger , Viktoryia Uhnevionak , Alexander Burenkov et al.
Materials Science Forum, 2014, 806, pp.127 - 132. ⟨10.4028/www.scientific.net/msf.806.127⟩
Article dans une revue hal-01921388 v1

Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers

François-Xavier Darras , Nikolay Cherkashin , Fuccio Cristiano , Emmanuel Scheid , Oleg Kononchuk et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
Article dans une revue hal-01719500 v1

Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing

Giuseppe Fisicaro , Lourdes Pelaz , Maria Aboy , Pedro Lopez , Markus Italia et al.
Applied Physics Express, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
Article dans une revue hal-01921825 v1
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Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

Maryam Shayesteh , Dan O' Connell , Farzan Gity , Philip Murphy-Armando , Ran Yu et al.
IEEE Transactions on Electron Devices, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩
Article dans une revue hal-01921394 v1

Extended defects and precipitation in heavily B-doped silicon

O. Cojocaru-Mirédin , Fuccio Cristiano , Pier-Francesco Fazzini , Dominique Mangelinck , D. Blavette
Thin Solid Films, 2013, 534, pp.62 - 66. ⟨10.1016/j.tsf.2013.01.090⟩
Article dans une revue istex hal-01921833 v1
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Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si

Cloud Nyamhere , Fuccio Cristiano , François Olivie , Z. Essa , Eléna Bedel-Pereira et al.
Journal of Applied Physics, 2013, 113 (18), pp.184508
Article dans une revue hal-01921870 v1

Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

A. Belafhaili , L. Laânab , Fuccio Cristiano , Nikolay Cherkashin , Alain Claverie
Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩
Article dans une revue istex hal-01736024 v1

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

V. Mortet , Eléna Bedel-Pereira , Jean-François Bobo , Fuccio Cristiano , Christian Strenger et al.
Materials Science Forum, 2013, 740-742, pp.525 - 528. ⟨10.4028/www.scientific.net/msf.740-742.525⟩
Article dans une revue hal-01921860 v1

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Viktoryia Uhnevionak , Christian Strenger , Alex Burenkov , Vincent Mortet , Eléna Bedel-Pereira et al.
Materials Science Forum, 2013, 740-742, pp.533 - 536. ⟨10.4028/www.scientific.net/msf.740-742.533⟩
Article dans une revue hal-01921843 v1

Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets

Christian Strenger , Viktoryia Uhnevionak , Alex Burenkov , Anton J Bauer , Vincent Mortet et al.
Materials Science Forum, 2013, 740-742, pp.537 - 540. ⟨10.4028/www.scientific.net/msf.740-742.537⟩
Article dans une revue hal-01921853 v1

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

C. Strenger , V. Haeublein , T. Enbacher , A. J. Bauer , H. Ryssel et al.
Materials Science Forum, 2012, 717-720, pp.437-440. ⟨10.4028/www.scientific.net/MSF.717-720.437⟩
Article dans une revue hal-01745018 v1

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

Anna Maria Beltrán , Sylvie Schamm-Chardon , Vincent Mortet , Matthieu Lefebvre , Eléna Bedel-Pereira et al.
Materials Science Forum, 2012, 711, pp.134-138. ⟨10.4028/www.scientific.net/MSF.711.134⟩
Article dans une revue hal-01745014 v1
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Role of the Ge surface during the end of range dissolution

S. Boninelli , G. Impellizzeri , A. Alberti , F. Priolo , Fuccio Cristiano et al.
Applied Physics Letters, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩
Article dans une revue hal-01921897 v1

Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

W. Lerch , W. Kegel , J. Niess , A. Gschwandtner , J. Gelpey et al.
ECS Transactions, 2012, 45 (6), pp.151 - 161. ⟨10.1149/1.3700948⟩
Article dans une revue hal-01922632 v1

Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts

X.-L. Han , Guilhem Larrieu , Emmanuel Dubois , Fuccio Cristiano
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (9-10), pp.836 - 839. ⟨10.1016/j.susc.2012.01.021⟩
Article dans une revue istex hal-01921880 v1
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Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Zahi Essa , Clement Gaumer , Ardechir Pakfar , Mickael Gros-Jean , Marc Juhel et al.
Applied Physics Letters, 2012, 101 (18), pp.182901. ⟨10.1063/1.4764558⟩
Article dans une revue hal-01921905 v1

Studies of implanted boron emitters for solar cell applications

B J Pawlak , T. Janssens , S. Singh , I. Kuzma-Filipek , J. Robbelein et al.
Progress in Photovoltaics, 2012, 20 (1), pp.106 - 110. ⟨10.1002/pip.1106⟩
Article dans une revue istex hal-01922649 v1
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Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

E. M Bazizi , P F Fazzini , A. Pakfar , C. Tavernier , B. Vandelle et al.
Journal of Applied Physics, 2010, 107 (7), pp.074503. ⟨10.1063/1.3369160⟩
Article dans une revue hal-01922894 v1

Overlayer stress effects on defect formation in Si and Ge

Nick E B Cowern , Nick S Bennett , Chihak Ahn , Joo Chul Yoon , Silke Hamm et al.
Thin Solid Films, 2010, 518 (9), pp.2442 - 2447. ⟨10.1016/j.tsf.2009.09.142⟩
Article dans une revue istex hal-01922665 v1

Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs

E. M Bazizi , A. Pakfar , P F Fazzini , Fuccio Cristiano , C. Tavernier et al.
Thin Solid Films, 2010, 518 (9), pp.2427 - 2430. ⟨10.1016/j.tsf.2009.09.141⟩
Article dans une revue istex hal-01922678 v1
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End-of-range defects in germanium and their role in boron deactivation

F. Panciera , P F Fazzini , M. Collet , J. Boucher , Eléna Bedel-Pereira et al.
Applied Physics Letters, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩
Article dans une revue hal-01922899 v1

Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate

Sébastien Duguay , M. Ngamo , P. F Fazzini , Fuccio Cristiano , K. Daoud et al.
Thin Solid Films, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩
Article dans une revue istex hal-01922657 v1
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Direct imaging of boron segregation to extended defects in silicon

Sébastien Duguay , Thomas Philippe , Fuccio Cristiano , D. Blavette
Applied Physics Letters, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩
Article dans une revue hal-01922903 v1
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Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

Pier-Francesco Fazzini , Fuccio Cristiano , Etienne Talbot , Gérard Benassayag , S. Paul et al.
Thin Solid Films, 2010, 518 (9), pp.2338 - 2341. ⟨10.1016/j.tsf.2009.09.172⟩
Article dans une revue hal-01633467 v1
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Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

Fabrice Severac , Fuccio Cristiano , Eléna Bedel-Pereira , Pier Francesco Fazzini , Jonathan Boucher et al.
Journal of Applied Physics, 2010, 107 (12), pp.123711. ⟨10.1063/1.3446844⟩
Article dans une revue hal-01922687 v1

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation

V. Vervisch , Yannick Larmande , Philippe Delaporte , Thierry Sarnet , Marc Sentis et al.
Applied Surface Science, 2009, 255 (10), pp.5647-5650
Article dans une revue hal-00542699 v1
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Formation and evolution of F nanobubbles in amorphous and crystalline Si

S. Boninelli , G. Impellizzeri , S. Mirabella , F. Priolo , E. Napolitani et al.
Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩
Article dans une revue hal-01736061 v1

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

C. Dupré , T. Ernst , J.-M. Hartmann , F. Andrieu , J.-P. Barnes et al.
Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8
Article dans une revue hal-00393080 v1
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Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano
Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩
Article dans une revue hal-01736076 v1

Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects

S. Boninelli , Nikolay Cherkashin , Alain Claverie , Fuccio Cristiano
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩
Article dans une revue istex hal-01736073 v1

Defects evolution and dopant activation anomalies in ion implanted silicon

Fuccio Cristiano , Y. Lamrani , F. Severac , M. Gavelle , S. Boninelli et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
Article dans une revue istex hal-01736079 v1

Diffusion and activation of dopants in silicon and advanced silicon-based materials

P. Pichler , C.J. Ortiz , B. Colombeau , N.E.B. Cowern , E. Lampin et al.
Physica Scripta, 2006, T126, pp.89-96
Article dans une revue hal-00138673 v1

Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si

E. Lampin , C.J. Ortiz , N.E.B. Cowerne , B. Colombeau , Fuccio Cristiano
Solid-State Electronics, 2005, 49, pp.1168-1171
Article dans une revue hal-00138394 v1
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Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin , Fuccio Cristiano , Youness Lamrani , Damien Connétable
Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩
Article dans une revue istex hal-03599806 v1

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani et al.
Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩
Article dans une revue hal-01736089 v1

Structure determination of clusters formed in ultra-low energy high-dose implanted silicon

Nikolay Cherkashin , Martin Hÿtch , Fuccio Cristiano , Alain Claverie
Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩
Article dans une revue hal-01736085 v1

On the “Life” of {113} Defects

Nikolay Cherkashin , P. Calvo , Fuccio Cristiano , B. de Mauduit , Alain Claverie
MRS Proceedings, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩
Article dans une revue hal-01736093 v1

Ion beam induced defects in crystalline silicon

Fuccio Cristiano , Nikolay Cherkashin , Xavier Hebras , P. Calvo , Y. Lamrani et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
Article dans une revue istex hal-01736101 v1

Depth dependence of defect evolution and TED during annealing

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Y. Lamrani et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94
Article dans une revue hal-00140976 v1

Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions

Fuccio Cristiano , Nikolay Cherkashin , P. Calvo , Y. Lamrani , Xavier Hebras et al.
Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
Article dans une revue istex hal-01736096 v1

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

P. Calvo , Alain Claverie , Nikolay Cherkashin , B. Colombeau , Y. Lamrani et al.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩
Article dans une revue istex hal-01736098 v1

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin , Fuccio Cristiano , Y. Lamrani , B. Colombeau
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99
Article dans une revue hal-00140975 v1

Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle

Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano
MRS Proceedings, 2004, 810, ⟨10.1557/proc-810-c5.4⟩
Article dans une revue hal-01736104 v1
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Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin , Fuccio Cristiano , Y. Lamrani , Alain Claverie , B. Colombeau et al.
Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩
Article dans une revue hal-00146393 v1
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Clusters formation in ultralow-energy high-dose boron-implanted silicon

Fuccio Cristiano , Xavier Hebras , Nikolay Cherkashin , Alain Claverie , W. Lerch et al.
Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩
Article dans une revue hal-01736115 v1
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Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

B. Colombeau , N.E.B. Cowern , Fuccio Cristiano , P. Calvo , Nikolay Cherkashin et al.
Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩
Article dans une revue hal-01736110 v1

Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials

Jonas Müller , Nicolas Mallet , Rémi Demoulin , Leonardo Cancellara , Aurélie Lecestre et al.
E-MRS Fall 2024, Sep 2024, Warsaw, Poland
Communication dans un congrès hal-04714304 v1

Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser

Richard Daubriac , Rémi Demoulin , Sébastien Kerdilès , P. Acosta-Alba , M. Opprecht et al.
2023 E-MRS Spring Meeting, May 2023, Strasbourg, France
Communication dans un congrès hal-04442327 v1

Locally ion Implantation and annealing effects in Diamond

Mohamed Bourass , Raid Gourad , Karine Isoird , Fuccio Cristiano , Josiane Tasselli et al.
European Materials Research Society (EMRS) Spring Meeting, Symposium R (Diamond for electronics, sensors and detectors V), May 2023, Strasbourg, France
Communication dans un congrès hal-04666590 v1

Investigation of the formation of nickel silicides on vertical silicon nanostructured channel for advanced electronics

Jonas Müller , Rémi Demoulin , Fuccio Cristiano , Guilhem Larrieu
E-MRS 2023 SPRING MEETING, May 2023, Strasbourg, France
Communication dans un congrès hal-04423814 v1

Study of the electrical and structural properties of Ru thin films annealed by Microsecond UV Laser Annealing for future BEOL interconnections

Richard Daubriac , Leonardo Cancellara , Mohamed Ali Khaled , Lu Lu , Zeinab Chehadi et al.
2023 E-MRS Fall Meeting, Sep 2023, Warsaw, Poland
Communication dans un congrès hal-04442370 v1
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Top-Down Fabrication of Vertical Nanostructured Channel Arrays on SiGe for Future Nanoelectronics Applications

Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J. M. Hartmann et al.
MNE Eurosensors 2022, Sep 2022, Leuven, Belgium
Communication dans un congrès hal-03771503 v1
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Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films

Rémi Demoulin , Richard Daubriac , Louis Thuries , Emmanuel Scheid , Fabien Rozé et al.
IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩
Communication dans un congrès hal-03795894 v1

Advances in top-down fabrication and processing of vertical SiGe nanowire arrays for future nanoelectronics applications

Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J. M. Hartmann et al.
J2N 2022 - Journées Nationales Nanofils semiconducteurs, Sep 2022, Nice, France
Communication dans un congrès hal-03771519 v1

Locally Ion Implantation and Annealing Effects in Diamond

Raid. Gourad , Mohamed Bouras , Karine Isoird , Josiane Tasselli , Fuccio Cristiano et al.
E-MRS 2022 Fall Meeting., Sep 2022, Warsaw, Poland
Communication dans un congrès hal-03766749 v1
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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

Antoine Jay , Anne Hémeryck , Fuccio Cristiano , Denis Rideau , Pierre-Louis Julliard et al.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.128-132, ⟨10.1109/SISPAD54002.2021.9592553⟩
Communication dans un congrès hal-03366621 v1
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Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2

Pierre-Louis Julliard , Antoine Jay , Miha Gunde , Nicolas Salles , Frederic Monsieur et al.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.219-223, ⟨10.1109/SISPAD54002.2021.9592580⟩
Communication dans un congrès hal-03366600 v1

Stress relaxation and dopant activation in nsec laser annealed SiGe

Fuccio Cristiano , Richard Monflier , Richard Daubriac , Rémi Demoulin , Emmanuel Scheid et al.
IWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩
Communication dans un congrès hal-03449341 v1
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Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing

Toshiyuki Tabata , Pierre - Edouard Raynal , Fabien Rozé , Sébastien Halty , Louis Thuries et al.
IEEE International Interconnect Technology Conference (IITC 2021), Jul 2021, Kyoto (virtual), Japan. ⟨10.1109/IITC51362.2021.9537312⟩
Communication dans un congrès hal-03412643 v1
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Undoped SiGe material calibration for numerical nanosecond laser annealing simulations

Anne-Sophie Royet , L. Dagault , Sebastien Kerdiles , Pablo Acosta Alba , J.P P Barnes et al.
SISPAD International Conference on Simulation of Semiconductor Processes and Devices, Sep 2020, Kobe, Japan. ⟨10.23919/SISPAD49475.2020.9241664⟩
Communication dans un congrès hal-03097960 v1
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Implant heating contribution to amorphous layer formation: a KMC approach

P.L. Julliard , P. Dumas , F. Monsieur , F. Hilario , D. Rideau et al.
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.43-46, ⟨10.23919/SISPAD49475.2020.9241608⟩
Communication dans un congrès hal-03095123 v1

Reduction of the growth inhibition and substrate oxidation during the first steps of alumina ALD on Si by an in situ N2-NH3 plasma surface pre-treatment

Giorgos Gakis , Hugues Vergnes , Fuccio Cristiano , Constantin Vahlas , Brigitte Caussat et al.
RafALD, GDR RafALD, Nov 2019, Toulouse, France
Communication dans un congrès hal-04743574 v1

Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures

A-S. Royet , S. Kerdiles , P. Acosta Alba , Caroline Bonafos , Vincent Paillard et al.
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩
Communication dans un congrès hal-02392503 v1
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Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization

Richard Monflier , Hiba Rizk , Toshiyuki Tabata , Julien Roul , Simona Boninelli et al.
22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩
Communication dans un congrès hal-01803955 v2

Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy

Richard Monflier , Toshiyuki Tabata , Mégane Turpin , Amin Benyoucef , Fuccio Cristiano et al.
MRS Fall Meeting , MRS, Nov 2017, Boston, United States
Communication dans un congrès hal-01555348 v1
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Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect

Richard Daubriac , Emmanuel Scheid , S. Joblot , R. Beneyton , P Acosta Alba et al.
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
Communication dans un congrès hal-01735436 v1

Etude des défauts induits par recuit laser excimer sur silicium

Richard Monflier , Amin Benyoucef , Mégane Turpin , Fuccio Cristiano , Eléna Bedel-Pereira
20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p
Communication dans un congrès hal-01690886 v1

Differential Hall characterisation of shallow strained SiGe layers

R Daubriac , M Abou Daher , E. Scheid , S. Joblot , D Barge et al.
2016 21st International Conference on Ion Implantation Technology (IIT), Sep 2016, Tainan, Taiwan
Communication dans un congrès hal-01730666 v1

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Communication dans un congrès hal-01730659 v1

Differential hall characterization of shallow strained SiGe layers

Richard Daubriac , Mahmoud Abou Daher , Emmanuel Scheid , Fuccio Cristiano , S. Joblot et al.
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩
Communication dans un congrès hal-01730652 v1
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Defect investigation of excimer laser annealed silicon

Richard Monflier , Toshiyuki Tabata , Fuccio Cristiano , Inès Toque-Tresonne , Fulvio Mazzamuto et al.
IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France
Communication dans un congrès hal-01343978 v3

Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys

Hélène Carrère , Aurélien Kuck , Hajer Makhloufi , Poonyasiri Boonpeng , Alexandre Arnoult et al.
6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
Communication dans un congrès hal-01947411 v1

Extended defects in ion-implanted si during nanosecond laser annealing

Fuccio Cristiano , Y. Qiu , Eléna Bedel-Pereira , Karim Huet , Fulvio Mazzamuto et al.
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Communication dans un congrès hal-01721156 v1

On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing

Alexandre Arnoult , Aurélien Kuck , Hajer Makhloufi , Poonyasiri Boonpeng , Simone Mazzucato et al.
5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
Communication dans un congrès hal-01947318 v1
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Compositional characterization of SiC-SiO2 interfaces in MOSFETs

Anna Maria Beltrán , Sylvie Schamm-Chardon , Vincent Mortet , Eléna Bedel-Pereira , Fuccio Cristiano et al.
15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p
Communication dans un congrès hal-00720226 v1

Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon

Fuccio Cristiano , Zahi Essa , Yang Qiul , Yohann Spiegel , Frank Torregrosa et al.
12th International Workshop on Junction Technology (IWJT 2012), May 2012, Shanghai, China. pp.1--7, ⟨10.1109/IWJT.2012.6212827⟩
Communication dans un congrès hal-01928869 v1

Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions

R. El Farhane , C. Laviron , Fuccio Cristiano , Nikolay Cherkashin , P. Morin et al.
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩
Communication dans un congrès hal-01736099 v1

Activation, diffusion and defect analysis of a spike anneal thermal cycle

Silke Paul , Wilfried Lerch , Xavier Hebras , Nikolay Cherkashin , Fuccio Cristiano
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
Communication dans un congrès hal-01736106 v1

On the modelling of transient diffusion and activation of boron during post-implantation annealing

P. Pichler , C.J. Ortiz , B. Colombeau , N.E.B. Cowern , E. Lampin et al.
International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States
Communication dans un congrès hal-00141013 v1

Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions

Bernard Colombeau , A. Smith , N.E.B. Cowern , B. Pawlak , Fuccio Cristiano et al.
2004, pp.91-102
Communication dans un congrès hal-00140989 v1

Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions

W. Lerch , S. Paul , J. Niess , Fuccio Cristiano , Y. Lamrani et al.
Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
Communication dans un congrès hal-01736100 v1

Physics-based process simulation of ultrashallow junctions

N.E.B. Cowern , B. Colombeau , R. Duffy , V. Venezia , C. Dachs et al.
Ultra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States
Communication dans un congrès hal-00146422 v1

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin , Fuccio Cristiano , Y. Lamrani , Bernard Colombeau
European Materials Research Society Spring Meeting, 2003, Strasbourg, France
Communication dans un congrès hal-00146423 v1

Physics-based diffusion simulations for preamorphized ultrashallow junctions

N.E.B. Cowern , B. Colombeau , E. Lampin , Fuccio Cristiano , Alain Claverie et al.
2003, pp.D6.8
Communication dans un congrès hal-00146407 v1

Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon

Alain Claverie , Fuccio Cristiano , B. Colombeau , Xavier Hebras , P. Calvo et al.
2003, pp.73
Communication dans un congrès hal-00146421 v1

Locally Ion Implantation and Annealing Effects in Diamond

Mohamed Bouras , Raid Gourad , Karine Isoird , Fuccio Cristiano , Josiane Tasselli et al.
Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium
Poster de conférence hal-04396208 v1

Locally Ion Implantation and Annealing Effects in Diamond

Mohamed Bouras , Raid Gourad , Karine Isoird , Fuccio Cristiano , Josiane Tasselli et al.
Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium
Poster de conférence hal-04269992 v1
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Locally Ion Implantation and Annealing Effects in Diamond

M.A. Pinault-Thaury , Mohamed Bouras , Raid Gourad , Karine Isoird , Fuccio Cristiano et al.
3rd MOMENTOM INTERNATIONAL CONGRESS, Mar 2023, Gif-sur-yvette, France. 2023
Poster de conférence hal-04271407 v1

Growth and properties of GaAsBi thin layers by molecular beam epitaxy

Chantal Fontaine , Alexandre Arnoult , Fuccio Cristiano , Hélène Carrère , Sawsen Azaizia et al.
International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
Poster de conférence hal-01947425 v1

Structural, optical and spin properties of GaAsBi alloys grown on (001)GaAs substrates by molecular beam epitaxy

Chantal Fontaine , Alexandre Arnoult , Patchareewan Prongjit , Simone Mazzucato , Hélène Carrère et al.
18th EuroMBE, Mar 2015, Canazei, Italy. 2015
Poster de conférence hal-01947381 v1

Spin properties of dilute bismides

Alexandre Arnoult , Aurélien Kuck , Hajer Makhloufi , Poonyasiri Boonpeng , Simone Mazzucato et al.
18th EuroMBE, Mar 2015, Canazei, Italy. 2015
Poster de conférence hal-01947398 v1

Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)

Hajer Makhloufi , Poonyasiri Boonpeng , Simone Mazzucato , Hélène Carrère , Tiantian Zhang et al.
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
Poster de conférence hal-01947354 v1

Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

Ray Duffy , Enrico Napolitani , Fuccio Cristiano
Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555
Chapitre d'ouvrage hal-03341171 v1