Fuccio CRISTIANO

Publications

Article dans une revue (90)

Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes Richard Monflier,Richard Daubriac,Mahmoud Haned,Toshiyuki Tabata,François Olivieret al. IEEE Transactions on Electron Devices, 2025, 72 (11), pp.5860 - 5867. ⟨10.1109/TED.2025.3614566⟩ Article dans une revue hal-04878600v2
Engineering Ni-Silicide Nanocontacts for 3D Silicon Devices via Geometrical Confinement Control Jonas Müller,Remi Demoulin,Leonardo Cancellara,Fuccio Cristiano,Guilhem Larrieu ACS Nano, 2025, 19 (31), pp.28450-28459. ⟨10.1021/acsnano.5c07195⟩ Article dans une revue hal-05226417v1
Evolution of the liquid/solid interface roughness in Si$_{1-x}$Ge$_x$ layers processed by nanosecond laser annealing Rémi Demoulin,Richard Daubriac,S. Kerdilès,L. Dagault,O. Adamiet al. Applied Surface Science, 2025, 684, pp.161982. ⟨10.1016/j.apsusc.2024.161982⟩ Article dans une revue hal-04821556v1
Laser‐Annealed SiO 2 /Si 1− x Ge x Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation Damiano Ricciarelli,Jonas Müller,Guilhem Larrieu,Ioannis Deretzis,Gaetano Calogeroet al. Physica Status Solidi A (applications and materials science), 2024, 221 (24), pp.2400120. ⟨10.1002/pssa.202400120⟩ Article dans une revue cea-04769530v1
Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds Nicolas Mallet,Jonas Müller,Julien Pezard,Fuccio Cristiano,Raghda Makaremet al. ACS Applied Materials & Interfaces, 2024, 16 (2), pp.2449-2456. ⟨10.1021/acsami.3c09689⟩ Article dans une revue hal-04639884v1
Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework P.L. Julliard,A. Johnsson,N. Zographos,R. Demoulin,Richard Monflieret al. Solid-State Electronics, 2023, 200, pp.108521. ⟨10.1016/j.sse.2022.108521⟩ Article dans une revue hal-03867418v1
Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys Damiano Ricciarelli,Giovanni Mannino,Ioannis Deretzis,Gaetano Calogero,Giuseppe Fisicaroet al. Materials Science in Semiconductor Processing, 2023, 165, pp.107635. ⟨10.1016/j.mssp.2023.107635⟩ Article dans une revue hal-04344631v1
β‐Disubstituted Pentacene Derivatives: Thin Film Structural Properties and Four‐Probe Field Effect Mobility Mouaad‐yassine Aliouat,Filadelfo Cristiano,Lydia Abbassi,Stéphanie Escoubas,Fabien Mesnilgrenteet al. ChemPlusChem, 2023, 89 (4), ⟨10.1002/cplu.202300611⟩ Article dans une revue hal-04742937v1
Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics Meiling Zhang,Jean-Marie Poumirol,Nicolas Chery,Hervé Rinnert,Alaa Gibaet al. Nanoscale, 2023, 15 (16), pp.7438-7449. ⟨10.1039/D3NR00035D⟩ Article dans une revue hal-04088288v2
Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study Dima Sadek,Antoine Jay,Jihan El Hila,Quentin Gravelier,Alexandre Arnoultet al. Applied Surface Science, 2023, 622, pp.156688. ⟨10.1016/j.apsusc.2023.156688⟩ Article dans une revue hal-04017077v1
Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing Nicolas Chery,Meiling Zhang,Nicolas Mallet,Grégory Seine,Vincent Paillardet al. Journal of Applied Physics, 2022, 131 (6), pp.014008. ⟨10.1063/5.0073827⟩ Article dans une revue hal-04236606v1
Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate Aurélie Lecestre,Mickael Martin,Fuccio Cristiano,Thierry Baron,Guilhem Larrieu ACS Omega, 2022, 7, pp.5836 - 5843. ⟨10.1021/acsomega.1c05876⟩ Article dans une revue hal-03600996v1
Engineering of dense arrays of Vertical Si 1-x Ge x nanostructures Jonas Müller,Aurélie Lecestre,Rémi Demoulin,Fuccio Cristiano,J-M Hartmannet al. Nanotechnology, 2022, 34 (10), pp.105303. ⟨10.1088/1361-6528/aca419⟩ Article dans une revue hal-04714277v1
Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs Dima Sadek,Richard Daubriac,Corentin Durand,Richard Monflier,Quentin Gravelieret al. Crystal Growth & Design, 2022, 22 (8), pp.5081-5091. ⟨10.1021/acs.cgd.2c00585⟩ Article dans une revue hal-03775836v1
Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime Meiling Zhang,Jean-Marie Poumirol,Nicolas Chery,Clement Majorel,Rémi Demoulinet al. Nanophotonics, 2022, 2022, pp.0283. ⟨10.1515/nanoph-2022-0283⟩ Article dans une revue hal-03737737v1
Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology Daya Dhungana,Nicolas Mallet,Pier-Francesco Fazzini,Guilhem Larrieu,Fuccio Cristianoet al. Nanotechnology, 2022, 33 (48), pp.485601. ⟨10.1088/1361-6528/ac8bdb⟩ Article dans une revue hal-03775839v1
Multiscale modeling of ultrafast melting phenomena Gaetano Calogero,Domenica Raciti,Pablo Acosta,Fuccio Cristiano,Ioannis Deretziset al. npj Computational Materials, 2022, 8, pp.1-10. ⟨10.1038/s41524-022-00720-y⟩ Article dans une revue hal-03795924v1
Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate Dima Sadek,Daya S Dhungana,Roland Coratger,Corentin Durand,Arnaud Proiettiet al. ACS Applied Materials & Interfaces, 2021, 13 (30), pp.36492-36498. ⟨10.1021/acsami.1c08477⟩ Article dans une revue hal-03407922v1
Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics Jean-Marie Poumirol,Clément Majorel,Nicolas Chery,Christian Girard,Peter Wiechaet al. ACS photonics, 2021, 8 (5), pp.1393-1399. ⟨10.1021/acsphotonics.1c00019⟩ Article dans une revue hal-03040170v1
Investigation of oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities Richard Monflier,Toshiyuki Tabata,Hiba Rizk,Julien Roul,Karim Huetet al. Applied Surface Science, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩ Article dans une revue hal-03098053v1
Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers L. Dagault,S. Kerdilès,P Acosta-Alba,J.-M. Hartmann,J.-P. Barneset al. Applied Surface Science, 2020, 527, pp.146752. ⟨10.1016/j.apsusc.2020.146752⟩ Article dans une revue hal-02983939v1
An Improved STEM/EDX Quantitative Method for Dopant Profiling at the Nanoscale Raghda Makarem,Fuccio Cristiano,Dominique Muller,Pier-Francesco Fazzini Microscopy and Microanalysis, 2020, 26 (1), pp.76 - 85. ⟨10.1017/s1431927619015241⟩ Article dans une revue hal-03097328v1
On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon Luis Marques,María Aboy,Iván Santos,Pedro López,Fuccio Cristianoet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2019, 458, pp.179-183. ⟨10.1016/j.nimb.2018.09.030⟩ Article dans une revue hal-01921136v1
Insight of surface treatments for CMOS compatibility of InAs nanowires Daya Dhungana,Anne Hémeryck,Nicolo Sartori,Pier-Francesco Fazzini,Fuccio Cristianoet al. Nano Research, 2019, 12, pp.581-586. ⟨10.1007/s12274-018-2257-8⟩ Article dans une revue hal-02017661v1
Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers Léa Dagault,P. Acosta-Alba,S. Kerdiles,J. P. Barnes,J. M. Hartmannet al. ECS Journal of Solid State Science and Technology, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩ Article dans une revue cea-02186445v1
Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD Giorgos Gakis,Hugues Vergnes,Fuccio Cristiano,Yann Tison,Constantin Vahlaset al. Journal of Applied Physics, 2019, 126 (12), pp.125305. ⟨10.1063/1.5113755⟩ Article dans une revue hal-02396236v1
Phase field model of the nanoscale evolution during the explosive crystallization phenomenon S F Lombardo,S. Boninelli,Fuccio Cristiano,I. Deretzis,M.G. Grimaldiet al. Journal of Applied Physics, 2018, 123 (10), ⟨10.1063/1.5008362⟩ Article dans une revue hal-01921142v1
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium Simona Boninelli,R. Milazzo,Robert Carles,Florent Houdellier,Ray Duffyet al. APL Materials, 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩ Article dans une revue hal-01796115v1
Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties Ahmet Lale,Emmanuel Scheid,Fuccio Cristiano,Lucien Datas,Benjamin Reiget al. Thin Solid Films, 2018, 666, pp.20 - 27. ⟨10.1016/j.tsf.2018.09.028⟩ Article dans une revue hal-02043421v1
A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers Richard Daubriac,Emmanuel Scheid,Hiba Rizk,Richard Monflier,Sylvain Joblotet al. Beilstein Journal of Nanotechnology, 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩ Article dans une revue hal-01921179v1
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches S F Lombardo,S. Boninelli,Fuccio Cristiano,G. Fisicaro,G. Fortunatoet al. Materials Science in Semiconductor Processing, 2017, 62, pp.80 - 91. ⟨10.1016/j.mssp.2016.10.047⟩ Article dans une revue hal-01921231v1
Ultrafast Generation of Unconventional { 001 } Loops in Si Luis Marques,María Aboy,Iván Santos,Pedro López,Fuccio Cristianoet al. Physical Review Letters, 2017, 119 (20), pp.205503. ⟨10.1103/physrevlett.119.205503⟩ Article dans une revue hal-01921215v1
Structural and mechanical characterization of hybrid metallic-inorganic nanosprings Sabrina Habtoun,Saïd Houmadi,Benjamin Reig,Emilie Pouget,Dmytro Dedovetset al. Materials Research Express, 2017, 4 (10), ⟨10.1088/2053-1591/aa8e1a⟩ Article dans une revue hal-01651965v1
Defect evolution and dopant activation in laser annealed Si and Ge Fuccio Cristiano,M. Shayesteh,R. Duffy,K. Huet,F. Mazzamutoet al. Materials Science in Semiconductor Processing, 2016, 42, pp.188 - 195. ⟨10.1016/j.mssp.2015.09.011⟩ Article dans une revue istex hal-01921268v1
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors Zahi Essa,B. Pelletier,P. Morin,P. Boulenc,A. Pakfaret al. Solid-State Electronics, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩ Article dans une revue istex hal-01435138v1
Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect Guillermo Ortiz,Christian Strenger,Viktoriya Uhnevionak,A Burenkov,Anton J Baueret al. Applied Physics Letters, 2015, 106 (6), pp.062104. ⟨10.1063/1.4908123⟩ Article dans une revue hal-01659149v1
Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation Viktoryia Uhnevionak,Alex Burenkov,Christian Strenger,Guillermo Ortiz,Vincent Mortetet al. Materials Science Forum, 2015, 821-823, pp.737 - 740. ⟨10.4028/www.scientific.net/msf.821-823.737⟩ Article dans une revue hal-01921384v1
Atomic scale characterization of SiO&lt;inf&gt;2&lt;/inf&gt;/4H-SiC interfaces in MOSFETs devices Anna Maria Beltrán,Sébastien Duguay,Christian Strenger,Anton J Bauer,Fuccio Cristianoet al. Solid State Communications, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩ Article dans une revue hal-01720451v1
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs Viktoryia Uhnevionak,Alexander Burenkov,Christian Strenger,Guillermo Ortiz,Eléna Bedel-Pereiraet al. IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩ Article dans une revue cea-01745394v1
A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices Cloud Nyamhere,A Scheinemann,A Schenk,A Scheit,François Olivieet al. Journal of Applied Physics, 2015, 118, pp.184501. ⟨10.1063/1.4935293⟩ Article dans une revue hal-01921377v1
Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs Christian Strenger,Viktoryia Uhnevionak,Vincent Mortet,Guillermo Ortiz,Tobias Erlbacheret al. Materials Science Forum, 2014, 778-780, pp.583 - 586. ⟨10.4028/www.scientific.net/msf.778-780.583⟩ Article dans une revue hal-01921817v1
Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect Guillermo Ortiz,Vincent Mortet,Chrisitan Strenger,Viktoryia Uhnevionak,Alexander Burenkovet al. Materials Science Forum, 2014, 806, pp.127 - 132. ⟨10.4028/www.scientific.net/msf.806.127⟩ Article dans une revue hal-01921388v1
Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon Yang Qiu,Fuccio Cristiano,Karim Huet,Fulvio Mazzamuto,Giuseppe Fisicaroet al. Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩ Article dans une revue hal-01659180v1
Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs Viktoryia Uhnevionak,Alex Burenkov,Christian Strenger,Vincent Mortet,Eléna Bedel-Pereiraet al. Materials Science Forum, 2014, 778-780, pp.483 - 486. ⟨10.4028/www.scientific.net/msf.778-780.483⟩ Article dans une revue hal-01921813v1
The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys Larbi Laânab,Amine Belafhaili,Fuccio Cristiano,Nikolay Cherkashin,Alain Claverie Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩ Article dans une revue istex hal-01719497v1
Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers François-Xavier Darras,Nikolay Cherkashin,Fuccio Cristiano,Emmanuel Scheid,Oleg Kononchuket al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩ Article dans une revue istex hal-01719500v1
Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing Giuseppe Fisicaro,Lourdes Pelaz,Maria Aboy,Pedro Lopez,Markus Italiaet al. Applied Physics Express, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩ Article dans une revue hal-01921825v1
Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current Maryam Shayesteh,Dan O' Connell,Farzan Gity,Philip Murphy-Armando,Ran Yuet al. IEEE Transactions on Electron Devices, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩ Article dans une revue hal-01921394v1
Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation A. Belafhaili,L. Laânab,Fuccio Cristiano,Nikolay Cherkashin,Alain Claverie Materials Science in Semiconductor Processing, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩ Article dans une revue istex hal-01736024v1
Extended defects and precipitation in heavily B-doped silicon O. Cojocaru-Mirédin,Fuccio Cristiano,Pier-Francesco Fazzini,Dominique Mangelinck,D. Blavette Thin Solid Films, 2013, 534, pp.62 - 66. ⟨10.1016/j.tsf.2013.01.090⟩ Article dans une revue istex hal-01921833v1
Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si Cloud Nyamhere,Fuccio Cristiano,François Olivie,Z. Essa,Eléna Bedel-Pereiraet al. Journal of Applied Physics, 2013, 113 (18), pp.184508 Article dans une revue hal-01921870v1
Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation V. Mortet,Eléna Bedel-Pereira,Jean-François Bobo,Fuccio Cristiano,Christian Strengeret al. Materials Science Forum, 2013, 740-742, pp.525 - 528. ⟨10.4028/www.scientific.net/msf.740-742.525⟩ Article dans une revue hal-01921860v1
Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets Christian Strenger,Viktoryia Uhnevionak,Alex Burenkov,Anton J Bauer,Vincent Mortetet al. Materials Science Forum, 2013, 740-742, pp.537 - 540. ⟨10.4028/www.scientific.net/msf.740-742.537⟩ Article dans une revue hal-01921853v1
Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets Viktoryia Uhnevionak,Christian Strenger,Alex Burenkov,Vincent Mortet,Eléna Bedel-Pereiraet al. Materials Science Forum, 2013, 740-742, pp.533 - 536. ⟨10.4028/www.scientific.net/msf.740-742.533⟩ Article dans une revue hal-01921843v1
Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs Anna Maria Beltrán,Sylvie Schamm-Chardon,Vincent Mortet,Matthieu Lefebvre,Eléna Bedel-Pereiraet al. Materials Science Forum, 2012, 711, pp.134-138. ⟨10.4028/www.scientific.net/MSF.711.134⟩ Article dans une revue hal-01745014v1
Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs C. Strenger,V. Haeublein,T. Enbacher,A. J. Bauer,H. Rysselet al. Materials Science Forum, 2012, 717-720, pp.437-440. ⟨10.4028/www.scientific.net/MSF.717-720.437⟩ Article dans une revue hal-01745018v1
Role of the Ge surface during the end of range dissolution S. Boninelli,G. Impellizzeri,A. Alberti,F. Priolo,Fuccio Cristianoet al. Applied Physics Letters, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩ Article dans une revue hal-01921897v1
Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation W. Lerch,W. Kegel,J. Niess,A. Gschwandtner,J. Gelpeyet al. ECS Transactions, 2012, 45 (6), pp.151 - 161. ⟨10.1149/1.3700948⟩ Article dans une revue hal-01922632v1
Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts X.-L. Han,Guilhem Larrieu,Emmanuel Dubois,Fuccio Cristiano Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (9-10), pp.836 - 839. ⟨10.1016/j.susc.2012.01.021⟩ Article dans une revue istex hal-01921880v1
Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks Zahi Essa,Clement Gaumer,Ardechir Pakfar,Mickael Gros-Jean,Marc Juhelet al. Applied Physics Letters, 2012, 101 (18), pp.182901. ⟨10.1063/1.4764558⟩ Article dans une revue hal-01921905v1
Studies of implanted boron emitters for solar cell applications B J Pawlak,T. Janssens,S. Singh,I. Kuzma-Filipek,J. Robbeleinet al. Progress in Photovoltaics, 2012, 20 (1), pp.106 - 110. ⟨10.1002/pip.1106⟩ Article dans une revue istex hal-01922649v1
Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator E. M Bazizi,P F Fazzini,A. Pakfar,C. Tavernier,B. Vandelleet al. Journal of Applied Physics, 2010, 107 (7), pp.074503. ⟨10.1063/1.3369160⟩ Article dans une revue hal-01922894v1
Overlayer stress effects on defect formation in Si and Ge Nick E B Cowern,Nick S Bennett,Chihak Ahn,Joo Chul Yoon,Silke Hammet al. Thin Solid Films, 2010, 518 (9), pp.2442 - 2447. ⟨10.1016/j.tsf.2009.09.142⟩ Article dans une revue istex hal-01922665v1
End-of-range defects in germanium and their role in boron deactivation F. Panciera,P F Fazzini,M. Collet,J. Boucher,Eléna Bedel-Pereiraet al. Applied Physics Letters, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩ Article dans une revue hal-01922899v1
Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs E. M Bazizi,A. Pakfar,P F Fazzini,Fuccio Cristiano,C. Tavernieret al. Thin Solid Films, 2010, 518 (9), pp.2427 - 2430. ⟨10.1016/j.tsf.2009.09.141⟩ Article dans une revue istex hal-01922678v1
Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium Pier-Francesco Fazzini,Fuccio Cristiano,Etienne Talbot,Gérard Benassayag,S. Paulet al. Thin Solid Films, 2010, 518 (9), pp.2338 - 2341. ⟨10.1016/j.tsf.2009.09.172⟩ Article dans une revue hal-01633467v1
Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate Sébastien Duguay,M. Ngamo,P. F Fazzini,Fuccio Cristiano,K. Daoudet al. Thin Solid Films, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩ Article dans une revue istex hal-01922657v1
Direct imaging of boron segregation to extended defects in silicon Sébastien Duguay,Thomas Philippe,Fuccio Cristiano,D. Blavette Applied Physics Letters, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩ Article dans une revue hal-01922903v1
Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions Fabrice Severac,Fuccio Cristiano,Eléna Bedel-Pereira,Pier Francesco Fazzini,Jonathan Boucheret al. Journal of Applied Physics, 2010, 107 (12), pp.123711. ⟨10.1063/1.3446844⟩ Article dans une revue hal-01922687v1
Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation V. Vervisch,Yannick Larmande,Philippe Delaporte,Thierry Sarnet,Marc Sentiset al. Applied Surface Science, 2009, 255 (10), pp.5647-5650 Article dans une revue hal-00542699v1
Formation and evolution of F nanobubbles in amorphous and crystalline Si S. Boninelli,G. Impellizzeri,S. Mirabella,F. Priolo,E. Napolitaniet al. Applied Physics Letters, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩ Article dans une revue hal-01736061v1
Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films C. Dupré,T. Ernst,J.-M. Hartmann,F. Andrieu,J.-P. Barneset al. Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8 Article dans une revue hal-00393080v1
Diffusion and activation of dopants in silicon and advanced silicon-based materials P. Pichler,C.J. Ortiz,B. Colombeau,N.E.B. Cowern,E. Lampinet al. Physica Scripta, 2006, T126, pp.89-96 Article dans une revue hal-00138673v1
Defects evolution and dopant activation anomalies in ion implanted silicon Fuccio Cristiano,Y. Lamrani,F. Severac,M. Gavelle,S. Boninelliet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩ Article dans une revue istex hal-01736079v1
Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects S. Boninelli,Nikolay Cherkashin,Alain Claverie,Fuccio Cristiano Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩ Article dans une revue istex hal-01736073v1
Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops S. Boninelli,Nikolay Cherkashin,Alain Claverie,Fuccio Cristiano Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩ Article dans une revue hal-01736076v1
Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si E. Lampin,C.J. Ortiz,N.E.B. Cowerne,B. Colombeau,Fuccio Cristiano Solid-State Electronics, 2005, 49, pp.1168-1171 Article dans une revue hal-00138394v1
Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions W. Lerch,S. Paul,J. Niess,Fuccio Cristiano,Y. Lamraniet al. Journal of The Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩ Article dans une revue hal-01736089v1
Optimisation of the parameters of an extended defect model applied to non-amorphizing implants E. Lampin,Fuccio Cristiano,Youness Lamrani,Damien Connétable Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩ Article dans une revue istex hal-03599806v1
Structure determination of clusters formed in ultra-low energy high-dose implanted silicon Nikolay Cherkashin,Martin Hÿtch,Fuccio Cristiano,Alain Claverie Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩ Article dans une revue hal-01736085v1
Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions Fuccio Cristiano,Nikolay Cherkashin,P. Calvo,Y. Lamrani,Xavier Hebraset al. Materials Science and Engineering: B, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩ Article dans une revue istex hal-01736096v1
Depth dependence of defect evolution and TED during annealing B. Colombeau,N.E.B. Cowern,Fuccio Cristiano,P. Calvo,Y. Lamraniet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94 Article dans une revue hal-00140976v1
Ion beam induced defects in crystalline silicon Fuccio Cristiano,Nikolay Cherkashin,Xavier Hebras,P. Calvo,Y. Lamraniet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩ Article dans une revue istex hal-01736101v1
On the “Life” of {113} Defects Nikolay Cherkashin,P. Calvo,Fuccio Cristiano,B. de Mauduit,Alain Claverie MRS Online Proceedings Library, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩ Article dans une revue hal-01736093v1
Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED E. Lampin,Fuccio Cristiano,Y. Lamrani,B. Colombeau Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99 Article dans une revue hal-00140975v1
Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle Silke Paul,Wilfried Lerch,Xavier Hebras,Nikolay Cherkashin,Fuccio Cristiano MRS Online Proceedings Library, 2004, 810, ⟨10.1557/proc-810-c5.4⟩ Article dans une revue hal-01736104v1
Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution P. Calvo,Alain Claverie,Nikolay Cherkashin,B. Colombeau,Y. Lamraniet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩ Article dans une revue istex hal-01736098v1
Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects E. Lampin,Fuccio Cristiano,Y. Lamrani,Alain Claverie,B. Colombeauet al. Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩ Article dans une revue hal-00146393v1
Clusters formation in ultralow-energy high-dose boron-implanted silicon Fuccio Cristiano,Xavier Hebras,Nikolay Cherkashin,Alain Claverie,W. Lerchet al. Applied Physics Letters, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩ Article dans une revue hal-01736115v1
Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon B. Colombeau,N.E.B. Cowern,Fuccio Cristiano,P. Calvo,Nikolay Cherkashinet al. Applied Physics Letters, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩ Article dans une revue hal-01736110v1

Communication dans un congrès (40)

Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials Jonas Müller,Nicolas Mallet,Rémi Demoulin,Leonardo Cancellara,Aurélie Lecestreet al. E-MRS Fall 2024, Sep 2024, Warsaw, Poland Communication dans un congrès hal-04714304v1
Investigation of the enlargement of Ru grains and failure modes analysis in microsecond UV laser annealing Zeinab Chehadi,Richard Daubriac,Lu Lu,Karim Huet,Zsolt Tokeiet al. 2024 IEEE International Interconnect Technology Conference (IITC), Jun 2024, San Jose, United States. pp.1-3, ⟨10.1109/IITC61274.2024.10732322⟩ Communication dans un congrès hal-05202707v1
Study on the electrical properties of ultrathin in situ Boron-doped strained Si0.7Ge0.3 layers annealed by nanosecond pulsed laser Richard Daubriac,Rémi Demoulin,Sébastien Kerdilès,P. Acosta-Alba,M. Opprechtet al. 2023 E-MRS Spring Meeting, May 2023, Strasbourg, France Communication dans un congrès hal-04442327v1
Locally ion Implantation and annealing effects in Diamond Mohamed Bourass,Raid Gourad,Karine Isoird,Fuccio Cristiano,Josiane Tasselliet al. European Materials Research Society (EMRS) Spring Meeting, Symposium R (Diamond for electronics, sensors and detectors V), May 2023, Strasbourg, France Communication dans un congrès hal-04666590v1
Investigation of the formation of nickel silicides on vertical silicon nanostructured channel for advanced electronics Jonas Müller,Rémi Demoulin,Fuccio Cristiano,Guilhem Larrieu E-MRS 2023 SPRING MEETING, May 2023, Strasbourg, France Communication dans un congrès hal-04423814v1
Study of the electrical and structural properties of Ru thin films annealed by Microsecond UV Laser Annealing for future BEOL interconnections Richard Daubriac,Leonardo Cancellara,Mohamed Ali Khaled,Lu Lu,Zeinab Chehadiet al. 2023 E-MRS Fall Meeting, Sep 2023, Warsaw, Poland Communication dans un congrès hal-04442370v1
Top-Down Fabrication of Vertical Nanostructured Channel Arrays on SiGe for Future Nanoelectronics Applications Jonas Müller,Aurélie Lecestre,Rémi Demoulin,Fuccio Cristiano,J. M. Hartmannet al. MNE Eurosensors 2022, Sep 2022, Leuven, Belgium Communication dans un congrès hal-03771503v1
Failure Mode Analysis in Microsecond UV Laser Annealing of Cu Thin Films Rémi Demoulin,Richard Daubriac,Louis Thuries,Emmanuel Scheid,Fabien Rozéet al. IEEE International Interconnect Technology Conference (IITC) 2022, Jun 2022, San José, California, United States. ⟨10.1109/iitc52079.2022.9881308⟩ Communication dans un congrès hal-03795894v1
Locally Ion Implantation and Annealing Effects in Diamond Raid Gourad,Mohamed Bouras,Karine Isoird,Josiane Tasselli,Fuccio Cristianoet al. E-MRS 2022 Fall Meeting., Sep 2022, Warsaw, Poland Communication dans un congrès hal-03766749v1
Advances in top-down fabrication and processing of vertical SiGe nanowire arrays for future nanoelectronics applications Jonas Müller,Aurélie Lecestre,Rémi Demoulin,Fuccio Cristiano,J. M. Hartmannet al. J2N 2022 - Journées Nationales Nanofils semiconducteurs, Sep 2022, Nice, France Communication dans un congrès hal-03771519v1
Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study Antoine Jay,Anne Hémeryck,Fuccio Cristiano,Denis Rideau,Pierre-Louis Julliardet al. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.128-132, ⟨10.1109/SISPAD54002.2021.9592553⟩ Communication dans un congrès hal-03366621v1
Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2 Pierre-Louis Julliard,Antoine Jay,Miha Gunde,Nicolas Salles,Frederic Monsieuret al. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.219-223, ⟨10.1109/SISPAD54002.2021.9592580⟩ Communication dans un congrès hal-03366600v1
Stress relaxation and dopant activation in nsec laser annealed SiGe Fuccio Cristiano,Richard Monflier,Richard Daubriac,Rémi Demoulin,Emmanuel Scheidet al. IWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩ Communication dans un congrès hal-03449341v1
Copper Large-scale Grain Growth by UV Nanosecond Pulsed Laser Annealing Toshiyuki Tabata,Pierre - Edouard Raynal,Fabien Rozé,Sébastien Halty,Louis Thurieset al. IEEE International Interconnect Technology Conference (IITC 2021), Jul 2021, Kyoto (virtual), Japan. ⟨10.1109/IITC51362.2021.9537312⟩ Communication dans un congrès hal-03412643v1
Undoped SiGe material calibration for numerical nanosecond laser annealing simulations Anne-Sophie Royet,L. Dagault,Sebastien Kerdiles,Pablo Acosta Alba,J.P P Barneset al. SISPAD International Conference on Simulation of Semiconductor Processes and Devices, Sep 2020, Kobe, Japan. ⟨10.23919/SISPAD49475.2020.9241664⟩ Communication dans un congrès hal-03097960v1
Implant heating contribution to amorphous layer formation: a KMC approach P.L. Julliard,P. Dumas,F. Monsieur,F. Hilario,D. Rideauet al. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2020, Kobe, Japan. pp.43-46, ⟨10.23919/SISPAD49475.2020.9241608⟩ Communication dans un congrès hal-03095123v1
Reduction of the growth inhibition and substrate oxidation during the first steps of alumina ALD on Si by an in situ N2-NH3 plasma surface pre-treatment Giorgos Gakis,Hugues Vergnes,Fuccio Cristiano,Constantin Vahlas,Brigitte Caussatet al. RafALD, GDR RafALD, Nov 2019, Toulouse, France Communication dans un congrès hal-04743574v1
Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures A-S. Royet,S. Kerdiles,P. Acosta Alba,Caroline Bonafos,Vincent Paillardet al. 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩ Communication dans un congrès hal-02392503v1
Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization Richard Monflier,Hiba Rizk,Toshiyuki Tabata,Julien Roul,Simona Boninelliet al. 22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩ Communication dans un congrès hal-01803955v2
Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy Richard Monflier,Toshiyuki Tabata,Mégane Turpin,Amin Benyoucef,Fuccio Cristianoet al. MRS Fall Meeting , MRS, Nov 2017, Boston, United States Communication dans un congrès hal-01555348v1
Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect Richard Daubriac,Emmanuel Scheid,S. Joblot,R. Beneyton,P Acosta Albaet al. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain Communication dans un congrès hal-01735436v1
Etude des défauts induits par recuit laser excimer sur silicium Richard Monflier,Amin Benyoucef,Mégane Turpin,Fuccio Cristiano,Eléna Bedel-Pereira 20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p Communication dans un congrès hal-01690886v1
Differential Hall characterisation of shallow strained SiGe layers R Daubriac,M Abou Daher,E. Scheid,S. Joblot,D Bargeet al. 2016 21st International Conference on Ion Implantation Technology (IIT), Sep 2016, Tainan, Taiwan Communication dans un congrès hal-01730666v1
High performance CMOS FDSOI devices activated at low temperature L. Pasini,P. Batude,J. Lacord,M. Cassé,B. Mathieuet al. 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩ Communication dans un congrès hal-01730659v1
Differential hall characterization of shallow strained SiGe layers Richard Daubriac,Mahmoud Abou Daher,Emmanuel Scheid,Fuccio Cristiano,S. Joblotet al. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩ Communication dans un congrès hal-01730652v1
Defect investigation of excimer laser annealed silicon Richard Monflier,Toshiyuki Tabata,Fuccio Cristiano,Inès Toque-Tresonne,Fulvio Mazzamutoet al. IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France Communication dans un congrès hal-01343978v3
Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys Hélène Carrère,Aurélien Kuck,Hajer Makhloufi,Poonyasiri Boonpeng,Alexandre Arnoultet al. 6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States Communication dans un congrès hal-01947411v1
Extended defects in ion-implanted si during nanosecond laser annealing Fuccio Cristiano,Y. Qiu,Eléna Bedel-Pereira,Karim Huet,Fulvio Mazzamutoet al. Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩ Communication dans un congrès hal-01721156v1
On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing Alexandre Arnoult,Aurélien Kuck,Hajer Makhloufi,Poonyasiri Boonpeng,Simone Mazzucatoet al. 5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland Communication dans un congrès hal-01947318v1
Compositional characterization of SiC-SiO2 interfaces in MOSFETs Anna Maria Beltrán,Sylvie Schamm-Chardon,Vincent Mortet,Eléna Bedel-Pereira,Fuccio Cristianoet al. 15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p Communication dans un congrès hal-00720226v1
Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon Fuccio Cristiano,Zahi Essa,Yang Qiul,Yohann Spiegel,Frank Torregrosaet al. 12th International Workshop on Junction Technology (IWJT 2012), May 2012, Shanghai, China. pp.1--7, ⟨10.1109/IWJT.2012.6212827⟩ Communication dans un congrès hal-01928869v1
Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions R. El Farhane,C. Laviron,Fuccio Cristiano,Nikolay Cherkashin,P. Morinet al. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩ Communication dans un congrès hal-01736099v1
On the modelling of transient diffusion and activation of boron during post-implantation annealing P. Pichler,C.J. Ortiz,B. Colombeau,N.E.B. Cowern,E. Lampinet al. International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States Communication dans un congrès hal-00141013v1
Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions Bernard Colombeau,A. Smith,N.E.B. Cowern,B. Pawlak,Fuccio Cristianoet al. 2004, pp.91-102 Communication dans un congrès hal-00140989v1
Activation, diffusion and defect analysis of a spike anneal thermal cycle Silke Paul,Wilfried Lerch,Xavier Hebras,Nikolay Cherkashin,Fuccio Cristiano Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩ Communication dans un congrès hal-01736106v1
Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions W. Lerch,S. Paul,J. Niess,Fuccio Cristiano,Y. Lamraniet al. Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105 Communication dans un congrès hal-01736100v1
Physics-based process simulation of ultrashallow junctions N.E.B. Cowern,B. Colombeau,R. Duffy,V. Venezia,C. Dachset al. Ultra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States Communication dans un congrès hal-00146422v1
Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED E. Lampin,Fuccio Cristiano,Y. Lamrani,Bernard Colombeau European Materials Research Society Spring Meeting, 2003, Strasbourg, France Communication dans un congrès hal-00146423v1
Physics-based diffusion simulations for preamorphized ultrashallow junctions N.E.B. Cowern,B. Colombeau,E. Lampin,Fuccio Cristiano,Alain Claverieet al. 2003, pp.D6.8 Communication dans un congrès hal-00146407v1
Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon Alain Claverie,Fuccio Cristiano,B. Colombeau,Xavier Hebras,P. Calvoet al. 2003, pp.73 Communication dans un congrès hal-00146421v1

Poster de conférence (7)

Locally Ion Implantation and Annealing Effects in Diamond Mohamed Bouras,Raid Gourad,Karine Isoird,Fuccio Cristiano,Josiane Tasselliet al. Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium Poster de conférence hal-04269992v1
Locally Ion Implantation and Annealing Effects in Diamond Mohamed Bouras,Raid Gourad,Karine Isoird,Fuccio Cristiano,Josiane Tasselliet al. Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium Poster de conférence hal-04396208v1
Locally Ion Implantation and Annealing Effects in Diamond M.A. Pinault-Thaury,Mohamed Bouras,Raid Gourad,Karine Isoird,Fuccio Cristianoet al. 3rd MOMENTOM INTERNATIONAL CONGRESS, Mar 2023, Gif-sur-yvette, France. 2023 Poster de conférence hal-04271407v1
Growth and properties of GaAsBi thin layers by molecular beam epitaxy Chantal Fontaine,Alexandre Arnoult,Fuccio Cristiano,Hélène Carrère,Sawsen Azaiziaet al. International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016 Poster de conférence hal-01947425v1
Structural, optical and spin properties of GaAsBi alloys grown on (001)GaAs substrates by molecular beam epitaxy Chantal Fontaine,Alexandre Arnoult,Patchareewan Prongjit,Simone Mazzucato,Hélène Carrèreet al. 18th EuroMBE, Mar 2015, Canazei, Italy. 2015 Poster de conférence hal-01947381v1
Spin properties of dilute bismides Alexandre Arnoult,Aurélien Kuck,Hajer Makhloufi,Poonyasiri Boonpeng,Simone Mazzucatoet al. 18th EuroMBE, Mar 2015, Canazei, Italy. 2015 Poster de conférence hal-01947398v1
Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster) Hajer Makhloufi,Poonyasiri Boonpeng,Simone Mazzucato,Hélène Carrère,Tiantian Zhanget al. 18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014 Poster de conférence hal-01947354v1

Ouvrages (1)

Laser annealing processes in semiconductor technology Fuccio Cristiano,Antonino La Magna Elsevier, 426p., 2021, 9780128202555 Ouvrages hal-03341138v1

Chapitre d'ouvrage (1)

Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors Ray Duffy,Enrico Napolitani,Fuccio Cristiano Laser Annealing Processes in Semiconductor Technology. Theory, Modeling and Applications in Nanoelectronics, Chapter 5, Elsevier, pp.175-250, 2021, 9780128202555 Chapitre d'ouvrage hal-03341171v1

Pré-publication, Document de travail (1)

A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers Richard Daubriac,Emmanuel Scheid,S. Joblot,R. Beneyton,P Acosta Albaet al. 2018 Pré-publication, Document de travail hal-01730674v1

HDR (1)

Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties Fuccio Cristiano Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013 HDR tel-00919958v1