Geoffrey Avit

Publications

Article dans une revue (21)

Indepth doping assessment of thick doped GaAs layer by scanning spreading resistance microscopy Lanpeng Qiang,Emmanuel Chereau,Philippe Regreny,Geoffrey Avit,Agnès Trassoudaineet al. Journal of Applied Physics, 2024, 136 (3), ⟨10.1063/5.0215140⟩ Article dans une revue hal-04713903v1
Control of SAG-GaN at the Nanoscale Elias Semlali,Evelyne Gil,Geoffrey Avit,Yamina André,Arthur Sauvagnatet al. Crystal Growth & Design, 2024, 24 (21), pp.8907-8913. ⟨10.1021/acs.cgd.4c00925⟩ Article dans une revue hal-04859091v1
Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE Elias Semlali,Geoffrey Avit,Yamina André,Evelyne Gil,Andriy Moskalenkoet al. Nanotechnology, 2024, 35 (26), pp.265604. ⟨10.1088/1361-6528/ad3741⟩ Article dans une revue hal-04713913v1
Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms Emmanuel Chereau,Vladimir Dubrovskii,Ethan Diak,Elias Semlali,Geoffrey Avitet al. ACS Applied Nano Materials, 2024, 7 (15), pp.17417-17423. ⟨10.1021/acsanm.4c02466⟩ Article dans une revue hal-04713908v1
Long indium-rich InGaAs nanowires by SAG-HVPE Emmanuel Chereau,Gabin Grégoire,Geoffrey Avit,Thierry Taliercio,Philipp Staudingeret al. Nanotechnology, 2024, 35 (19), pp.195601. ⟨10.1088/1361-6528/ad263a⟩ Article dans une revue hal-04465785v1
Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy Emmanuel Chereau,Vladimir Dubrovskii,Gabin Grégoire,Geoffrey Avit,Philipp Staudingeret al. Crystal Growth & Design, 2023, 23 (6), pp.4401-4409. ⟨10.1021/acs.cgd.3c00172⟩ Article dans une revue hal-04326757v1
Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy Mohammed Zeghouane,Gabin Grégoire,Emmanuel Chereau,Geoffrey Avit,Philipp Staudingeret al. Crystal Growth & Design, 2023, 23 (4), pp.2120-2127. ⟨10.1021/acs.cgd.2c01105⟩ Article dans une revue hal-04326767v1
Formation of voids in selective area growth of InN nanorods in SiN x on GaN templates Mohammed Zeghouane,Yamina Andre,Geoffrey Avit,Jihen Jridi,Catherine Bougerolet al. Nano Futures, 2020, 4 (2), pp.025002. ⟨10.1088/2399-1984/ab8450⟩ Article dans une revue hal-02992214v1
Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy Yoann Robin,Quentin Bournet,Geoffrey Avit,Markus Pristovsek,Yamina Andréet al. Semiconductor Science and Technology, 2020, 35 (11), pp.115005. ⟨10.1088/1361-6641/abad73⟩ Article dans une revue hal-03009678v1
Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy Mohammed Zeghouane,Geoffrey Avit,Yamina Andre,Thierry Taliercio,Pierre Ferretet al. Crystal Growth & Design, 2020, 20 (4), pp.2232-2239. ⟨10.1021/acs.cgd.9b01346⟩ Article dans une revue hal-02532717v1
Selective growth of ordered hexagonal InN nanorods Mohammed Zeghouane,Geoffrey Avit,Thomas W. Cornelius,Damien Salomon,Yamina Andreet al. CrystEngComm, 2019, 21 (16), pp.2702-2708. ⟨10.1039/C9CE00161A⟩ Article dans une revue hal-02107331v1
Compositional control of homogeneous InGaN nanowires with the In content up to 90% Mohammed Zeghouane,Geoffrey Avit,Yamina Andre,Catherine Bougerol,Yoann Robinet al. Nanotechnology, 2019, 30 (4), pp.044001. ⟨10.1088/1361-6528/aaec39⟩ Article dans une revue hal-02025949v1
Circumventing the miscibility gap in InGaN nanowires emitting from blue to red Elissa Roche,Yamina Andre,Geoffrey Avit,Catherine Bougerol,Dominique Castelluciet al. Nanotechnology, 2018, 29 (46), pp.465602. ⟨10.1088/1361-6528/aaddc1⟩ Article dans une revue hal-01913823v1
Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE Geoffrey Avit,Mohammed Zeghouane,Yamina André,Dominique Castelluci,Evelyne Gilet al. CrystEngComm, 2018, 20 (40), pp.6207-6213. ⟨10.1039/c8ce01177j⟩ Article dans une revue hal-03217102v1
Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates Hadi Hijazi,Vladimir Dubrovskii,Guillaume Monier,Evelyne Gil,Christine Lerouxet al. Journal of Physical Chemistry C, 2018, 122 (33), pp.19230 - 19235. ⟨10.1021/acs.jpcc.8b05459⟩ Article dans une revue hal-01886260v1
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures Geoffrey Avit,Yamina Andre,Catherine Bougerol,Dominique Castelluci,Amélie Dussaigneet al. Crystal Growth & Design, 2016, 16 (5), pp.2509-2513. ⟨10.1021/acs.cgd.5b01244⟩ Article dans une revue hal-02007652v1
Spontaneously formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy Agnès Trassoudaine,Geoffrey Avit,Yamina André,Mohammed Réda Ramdani,Elissa Rocheet al. Journal of Crystal Growth, 2016, 454, pp.1-5. ⟨10.1016/j.jcrysgro.2016.08.031⟩ Article dans une revue istex hal-01385444v1
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation Yamina Andre,Kaddour Lekhal,Philip E. Hoggan,Geoffrey Avit,Fabian Cadizet al. The Journal of Chemical Physics, 2014, 140 (19), ⟨10.1063/1.4874875⟩ Article dans une revue hal-01727422v1
Record Pure Zincblende Phase in GaAs Nanowires down to 5 nm in Radius Christine Leroux,Evelyne Gil,Vladimir Dubrovskii,Geoffrey Avit,Yamina Andreet al. Nano Letters, 2014, 14 (7), pp.3938 - 3944. ⟨10.1021/nl501239h⟩ Article dans une revue hal-01727364v1
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process G. Avit,Kaddour Lekhal,Y. André,Catherine Bougerol,François Reveretet al. Nano Letters, 2014, 14 (2), pp.559. ⟨10.1021/nl403687h⟩ Article dans une revue hal-00945828v1
Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability Kaddour Lekhal,G. Avit,Y. André,Agnès Trassoudaine,E. Gilet al. Nanotechnology, 2012, 23 (40), pp.405601. ⟨10.1088/0957-4484/23/40/40560⟩ Article dans une revue hal-00855826v1

Communication dans un congrès (9)

The HVPE technique for the growth of III-As and III-N micro and nanostructures Geoffrey Avit Journées croissance cristalline Renatech, Nov 2024, Toulouse, France Communication dans un congrès hal-04903858v1
III-As and III-N nanowires grown by hydride vapor phase epitaxy Geoffrey Avit Journées nationales du réseau CRISTECH, Oct 2024, Angers, France Communication dans un congrès hal-04903865v1
Selective area growth of well-ordered (In,Ga)N nanowires grown by HVPE Geoffrey Avit GdR MATEPI, Jul 2023, Paris, France Communication dans un congrès hal-04903846v1
III-nitride-based photovoltaic applications on silicon: Comparison between axial and coreshell InGaN nanowire devices Kaddour Lekhal,Geoffrey Avit,Si-Young Baa,Ho-Jun Lee,Oussman Barryet al. ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France Communication dans un congrès hal-01659491v1
Homogeneous and high-quality InGaN nanowires with different indium compositions Mohammed Zeghouane,Elissa Roche,Geoffrey Avit,Catherine Bougerol,Yamina Andreet al. Journées nationales des nanofils, Nov 2017, Grenoble, France Communication dans un congrès hal-01659721v1
Highlights of the HVPE for the frowth of GaN and InGaN nanowires Agnes Trassoudaine,Yamina André,Geoffrey Avit,Evelyne Gil,Dominique Castelluciet al. 15th Akasaki Research Center Symposium, Nov 2017, Nagoya, Japan Communication dans un congrès hal-01659801v1
Croissance sélective de GaN par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) Geoffrey Avit,Mohammed Zeghouane,Yamina Andre,Elissa Roche,Evelyne Gilet al. Session plénière GDR PULSE, Oct 2017, Paris, France Communication dans un congrès hal-01659756v1
Vapor Phase Epitaxy growth of III-V nanostructures for high performance devices Geoffrey Avit,Yamina Andre,Elissa Roche,Zhenning Dong,Mohammed Zeghouaneet al. 8th International Conference and Exhibition on LASERS, OPTICS & PHOTONICS, Nov 2017, Las Vegas, United States Communication dans un congrès hal-01659747v1
Hydride Vapor Phase Epitaxy (HVPE) growth of III-V and III-Nitrides nanowires on silicon Yamina Andre,Zhenning Dong,Elissa Roche,Geoffrey Avit,Vladimir G. Dubrovskiiet al. Energy Materials Nanotechnology EMN Epitaxy, EMN Europe Meetings, Sep 2017, Barcelone, Spain Communication dans un congrès hal-01658883v1

Poster de conférence (2)

Defect-free InGaN nanowires on silicon whatever the indium composition Mohammed Zeghouane,Elissa Roche,Geoffrey Avit,Yamina Andre,Catherine Bougerolet al. RÉUNION PLÉNIÈRE DU GDR PULSE 2017, Oct 2017, Paris, France Poster de conférence hal-01659715v1
Defect-free InGaN nanowires on silicon whatever the indium composition Geoffrey Avit,Elissa Roche,Mohammed Zeghouane,Yamina Andre,Catherine Bougerolet al. ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France Poster de conférence hal-01659728v1

Thèse (1)

Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) Geoffrey Avit Autre [cond-mat.other]. Université Blaise Pascal - Clermont-Ferrand II, 2014. Français. ⟨NNT : 2014CLF22530⟩ Thèse tel-01166333v1