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Romain Bachelet
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Nico Dix
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Ignasi Fina
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Nico Dix
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Rahma Moalla
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Samuel Saada
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Dong Han
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Valentina M. Giordano
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Poisson ratio and bulk lattice constant of (Sr 0.25 La 0.75 )CrO 3 from strained epitaxial thin films
Dong Han
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Perovskite-oxide based hyperbolic metamaterials
Mohamed Bouras
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Dong Han
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José Manuel Vila-Fungueiriño
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Guillaume Saint-Girons
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Andrés Gómez
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Guillaume Saint-Girons
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Andrés Gómez
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Guillaume Saint-Girons
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Jaume Gázquez
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Mihai Apreutesei
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Huge gain in pyroelectric energy conversion through epitaxy for integrated self-powered nanodevices
Rahma Moalla
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Guillaume Saint-Girons
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Gwenaël Le Rhun
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High ferroelectric polarization in c -oriented BaTiO 3 epitaxial thin films on SrTiO 3 /Si(001)
M. Scigaj
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Texture of Ge on SrTiO3(001) substrates: Evidence for in-plane axiotaxy
Alexandre Danescu
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GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell
Xin Guan
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Electro-Optical Modulation Based on Pockels Effect in BaTiO3 With a Multi-Domain Structure
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Epitaxy of iridium on SrTiO 3 /Si (001): A promising scalable substrate for diamond heteroepitaxy
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Chemical reactivity between sol–gel deposited Pb(Zr,Ti)O$_3$ layers and their GaAs substrates
Benjamin Meunier
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Romain Bachelet
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Low-Loss and Compact Silicon Rib Waveguide Bends
Antoine Brimont
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Sébastien Cueff
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Pédro Rojo Romeo
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Guillaume Saint Girons
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Dramatic effect of thermal expansion mismatch on the structural, dielectric, ferroelectric and pyroelectric properties of low-cost epitaxial PZT films on SrTiO 3 and Si (001) subtrates.
Rahma Moalla
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Gaël Sebald
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Epitaxy of SrTiO 3 on Silicon: The Knitting Machine Strategy
Guillaume Saint-Girons
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Romain Bachelet
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Rahma Moalla
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Benjamin Meunier
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Lamis Louahadj
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GaAs Core/SrTiO 3 Shell Nanowires Grown by Molecular Beam Epitaxy
X. Guan
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Integration of functional complex oxide nanomaterials on silicon
Josã© Vila-Fungueiriã±o
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Romain Bachelet
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Guillaume Saint-Girons
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Michel Gendry
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X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)
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Epitaxial manganite freestanding bridges for low power pressure sensors
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Epitaxial Growth of Ferroelectric Pb(Zr,Ti)O3 Layers on GaAs
Benjamin Meunier
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David Le Bourdais
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Ludovic Largeau
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Guillaume Agnus
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Chemistry and structure of BaTiO3 ultra-thin films grown by different O2 plasma power
J.L. Wang
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B. Gautier
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Phase transitions in [001]-oriented morphotropic PbZr0.52Ti0.48O3 thin film deposited onto SrTiO3-buffered Si substrate
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Electromechanical response of amorphous LaAlO 3 thin film probed by scanning probe microscopies
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David Albertini
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Guillaume Saint Girons
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Functional spinel oxide heterostructures on silicon
Romain Bachelet
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Patricia de Coux
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Bénédicte Warot-Fonrose
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Vassil Skumryev
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Gang Niu
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Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxy
Lucie Mazet
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Romain Bachelet
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Lamis Louahadj
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David Albertini
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Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature
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Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer
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Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate
K. Naji
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Applied Physics Letters, 2013, 102 (24), pp.243113
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Interface accommodation mechanism for weakly interacting epitaxial systems
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Ferroelectric Pb(Zr,Ti)O 3 epitaxial layers on GaAs
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Applied Physics Letters, 2013, 103 (21), pp.212901
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LaAlO 3 /Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties
Sylvain Pelloquin
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David Albertini
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Molecular beam epitaxy growth of BaTiO3 thin films and crucial impact of oxygen content conditions on the electrical characteristics
G. Niu
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Thin Solid Films, 2012, 520 (14), pp.4595-4599
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Ge/SrTiO 3 (001): Correlation between interface chemistry and crystallographic orientation
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Journal of Applied Physics, 2012, 112 (9), pp.093508
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Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
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Ge/SrTiO 3 (001) interface probed by soft x-ray synchrotron-radiation time-resolved photoemission
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Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85 (7)
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Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate
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Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition
G. Niu
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Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
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Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2011, 605 (9-10), pp.912 - 916. ⟨10.1016/j.susc.2011.02.003⟩
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Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application
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Microelectronic Engineering, 2011, 88 (7), pp.1232-1235
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Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(001) crystalline templates
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Heteroepitaxy of SrTiO3 thin films on Si (001) using different growth strategies: Toward substratelike quality
G. Niu
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2011, 29 (4), pp.041207. ⟨10.1116/1.3609813⟩
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Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates
C. Merckling
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Applied Physics Letters, 2011, 98 (9), pp.092901
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Evidence for the formation of two phases during the growth of SrTiO3 on silicon
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High oxidation state at the epitaxial interface of γ-Al2O3 thin films grown on Si(111) and Si(001)
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Applied Physics Letters, 2010, 97 (15), pp.151902
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Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001)
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Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates
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Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template
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Oxides heterostructures for nanoelectronics
Catherine Dubourdieu
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Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface
S. Pelloquin
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Microelectronic Engineering, 2009, 86 (7-9), pp.1686-1688
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Impact of a γ-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties
L. Becerra
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Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009, 27 (1), pp.384-388. ⟨10.1116/1.3065437⟩
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Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation
Gang Niu
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Gabriel Delhaye
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Influence of the surface reconstruction on the growth of InP on SrTiO3(001)
J. Cheng
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Journal of Crystal Growth, 2009, 311 (4), pp.1042-1045
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Twin formation during the growth of InP on SrTiO3
J. Cheng
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Applied Physics Letters, 2009, 94 (23), pp.231902
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X-ray photoelectron diffraction study of thin Al 2 O 3 films grown on Si(111) by molecular beam epitaxy
M. El Kazzi
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C. Merckling
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Guillaume Saint-Girons
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C. Botella
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79 (19)
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Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy
L. Largeau
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P. Regreny
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G. Patriarche
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A. Benamrouche
Applied Physics Letters, 2009, 95 (1), pp.011907
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Growth temperature dependence of epitaxial Gd2O3 films on Si(111)
Guillaume Saint-Girons
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G. Niu
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Microelectronic Engineering, 2009, 86 (7-9), pp.1700-1702
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Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)
Jinquan Cheng
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Thomas Aviles
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Ahiram El Akra
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C. Bru-Chevallier
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Ludovic Largeau
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hal-01901801v1
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Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems
Guillaume Saint-Girons
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J. Cheng
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P. Regreny
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L. Largeau
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G. Patriarche
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 80 (15)
Journal articles
hal-01939950v1
|
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Epitaxial growth of high-κ oxides on silicon
C. Merckling
,
Guillaume Saint-Girons
,
G. Delhaye
,
G. Patriarche
,
L. Largeau
Thin Solid Films, 2008, 517 (1), pp.197-200
Journal articles
hal-01939925v1
|
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Competition between InP and In2O3 islands during the growth of InP on SrTiO3
Guillaume Saint-Girons
,
P. Regreny
,
J. Cheng
,
G. Patriarche
,
L. Largeau
Journal of Applied Physics, 2008, 104 (3), pp.033509
Journal articles
hal-01939924v1
|
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De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer
Guillaume Saint-Girons
,
I. Sagnes
,
G. Patriarche
Journal of Crystal Growth, 2008, 310 (3), pp.536-540
Journal articles
hal-01939923v1
|
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Self-assembled Ge nanocrystals on BaTiO3∕SrTiO3∕Si(001)
L. Largeau
,
G. Patriarche
,
Guillaume Saint-Girons
,
G. Delhaye
,
G. Hollinger
Applied Physics Letters, 2008, 92 (3), pp.031904
Journal articles
hal-01939922v1
|
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Spontaneous compliance of the InP/SrTiO3 heterointerface
G. Saint-Girons
,
C. Priester
,
P. Regreny
,
G. Patriarche
,
L. Largeau
Journal articles
hal-00356956v1
|
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Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
M. Mérat-Combes
,
Guillaume Saint-Girons
,
A. Michon
,
I. Sagnes
,
G. Beaudoin
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601 (13), pp.2765-2768
Journal articles
hal-01939916v1
|
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Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO3 layers grown on Si(001)
L. Becerra
,
C. Merckling
,
N. Baboux
,
C. Plossu
,
O. Marty
Applied Physics Letters, 2007, 91 (19), pp.192909
Journal articles
hal-01939919v1
|
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Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy
C. Merckling
,
M. El-Kazzi
,
G. Delhaye
,
V. Favre-Nicolin
,
Y. Robach
Journal of Crystal Growth, 2007, 306 (1), pp.47-51
Journal articles
hal-01939914v1
|
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InAs nanocrystals on SiO2∕Si by molecular beam epitaxy for memory applications
Moïra Hocevar
,
Philippe Regreny
,
Armel Descamps
,
David Albertini
,
Guillaume Saint-Girons
Applied Physics Letters, 2007, 91 (13), pp.133114
Journal articles
hal-01939910v1
|
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Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxides
C. Merckling
,
M. El-Kazzi
,
L. Becerra
,
L. Largeau
,
G. Patriarche
Microelectronic Engineering, 2007, 84 (9-10), pp.2243-2246
Journal articles
hal-01939913v1
|
|
Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers
Guillaume Saint-Girons
,
P. Regreny
,
L. Largeau
,
G. Patriarche
,
G. Hollinger
Applied Physics Letters, 2007, 91 (24), pp.241912
Journal articles
hal-01939918v1
|
|
Local electronic transport through InAs/InP(0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe
M Troyon
,
K Smaali
,
M Molinari
,
a El Hdiy
,
Guillaume Saint-Girons
Semiconductor Science and Technology, 2007, 22 (7), pp.755-762
Journal articles
hal-01939920v1
|
|
Epitaxial growth of LaAlO3 on Si(001) using interface engineering
C. Merckling
,
G. Delhaye
,
M. El-Kazzi
,
Sébastien Gaillard
,
Y. Rozier
Microelectronics Reliability, 2007, 47 (4-5), pp.540-543
Journal articles
hal-01939917v1
|
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Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation
C. Merckling
,
M. El-Kazzi
,
Guillaume Saint-Girons
,
G. Hollinger
,
L. Largeau
Journal of Applied Physics, 2007, 102 (2), pp.024101
Journal articles
hal-01939912v1
|
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Density of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates
A. Michon
,
G. Patriarche
,
G. Beaudoin
,
Guillaume Saint-Girons
,
N. Gogneau
Journal articles
hal-01939911v1
|
|
Nanoepitaxy of InAs∕InP quantum dots by metalorganic vapor phase epitaxy for 1.55μm emitters
J. Benoit
,
L. Le Gratiet
,
G. Beaudoin
,
A. Michon
,
Guillaume Saint-Girons
Applied Physics Letters, 2006, 88 (4), pp.041113
Journal articles
hal-01939900v1
|
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Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in the In As ∕ In P ( 001 ) system: Experiment and theory
Guillaume Saint-Girons
,
A. Michon
,
I. Sagnes
,
G. Beaudoin
,
G. Patriarche
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (24)
Journal articles
hal-01939904v1
|
|
Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy
A. Michon
,
I. Sagnes
,
G. Patriarche
,
G. Beaudoin
,
M. Mérat-Combes
Journal of Applied Physics, 2006, 100 (3), pp.033508
Journal articles
hal-01939903v1
|
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Indium incorporation in In-rich In x Ga 1 − x As ∕ GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots
Guillaume Saint-Girons
,
Isabelle Sagnes
,
Gilles Patriarche
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (4)
Journal articles
hal-01939899v1
|
|
Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs/InP(001) quantum dot
G. Saint-Girons
,
Nicolas Chauvin
,
A. Michon
,
G. Patriarche
,
G. Beaudoin
Journal articles
hal-01902486v1
|
|
Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy
C. Merckling
,
M. El-Kazzi
,
G. Delhaye
,
M. Gendry
,
Guillaume Saint-Girons
Applied Physics Letters, 2006, 89 (23), pp.232907
Journal articles
hal-01939908v1
|
|
Thermodynamical analysis of the shape and size dispersion of In As ∕ In P ( 001 ) quantum dots
A. Michon
,
I. Sagnes
,
G. Patriarche
,
G. Beaudoin
,
M. Mérat-Combes
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73 (16)
Journal articles
hal-01939902v1
|
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Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)
G. Delhaye
,
C. Merckling
,
M. El-Kazzi
,
Guillaume Saint-Girons
,
M. Gendry
Journal of Applied Physics, 2006, 100 (12), pp.124109
Journal articles
hal-01939569v1
|
|
Initial stage of the overgrowth of InP on InAs∕InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges
Guillaume Saint-Girons
,
G. Patriarche
,
A. Michon
,
G. Beaudoin
,
I. Sagnes
Applied Physics Letters, 2006, 89 (3), pp.031923
Journal articles
hal-01939905v1
|
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Imaging the electric properties of InAs∕InP(001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect
K. Smaali
,
M. Troyon
,
A. El Hdiy
,
M. Molinari
,
Guillaume Saint-Girons
Applied Physics Letters, 2006, 89 (11), pp.112115
Journal articles
hal-01939907v1
|
|
InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process
A. Michon
,
G. Patriarche
,
I. Sagnes
,
G. Beaudoin
,
Guillaume Saint-Girons
physica status solidi (c), 2006, 3 (11), pp.3928-3931
Journal articles
hal-01939909v1
|
|
Buried dislocation networks for the controlled growth of III–V semiconductor nanostructures
F. Glas
,
J. Coelho
,
G. Patriarche
,
Guillaume Saint-Girons
Journal of Crystal Growth, 2005, 275 (1-2), pp.e1647-e1653
Journal articles
hal-01939898v1
|
|
Stress-engineered orderings of self-assembled III-V semiconductor nanostructures
J. Coelho
,
G. Patriarche
,
F. Glas
,
I. Sagnes
,
Guillaume Saint-Girons
physica status solidi (c), 2005, 2 (4), pp.1245-1250
Journal articles
hal-01939891v1
|
|
Carrier dynamics in Ga0.53In0.47As∕InP near-surface quantum wells
Clementine Symonds
,
Juliette Mangeney
,
Guillaume Saint-Girons
,
Isabelle Sagnes
Applied Physics Letters, 2005, 87 (1), pp.012107
Journal articles
hal-01939896v1
|
|
Electroabsorption spectroscopy of Ge∕Si self-assembled islands
M. El Kurdi
,
P. Boucaud
,
Sébastien Sauvage
,
F. Aniel
,
G. Fishman
Journal of Applied Physics, 2005, 97 (8), pp.083525
Journal articles
hal-01939892v1
|
|
InAs/InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy
A. Michon
,
Guillaume Saint-Girons
,
G. Beaudoin
,
I. Sagnes
,
L. Largeau
Journal articles
hal-01939897v1
|
|
Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
Y. Chriqui
,
Guillaume Saint-Girons
,
G. Isella
,
H. Von Kaenel
,
S. Bouchoule
Optical Materials, 2005, 27 (5), pp.846-850
Journal articles
hal-01939890v1
|
|
Dislocation networks adapted to order the growth of III-V semiconductor nanostructures
J. Coelho
,
G. Patriarche
,
F. Glas
,
I. Sagnes
,
Guillaume Saint-Girons
physica status solidi (c), 2005, 2 (6), pp.1933-1937
Journal articles
hal-01939894v1
|
|
Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures
José Coelho
,
Gilles Patriarche
,
Frank Glas
,
Guillaume Saint-Girons
,
Isabelle Sagnes
Journal articles
hal-00003230v1
|
|
Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
G. Saint-Girons
,
A. Lemaître
,
V. Navarro-Paredes
,
G. Patriarche
,
V. Rao
Journal of Crystal Growth, 2004, 264 (1-3), pp.334-338
Journal articles
hal-01939878v1
|
|
Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection
Y. Chriqui
,
L. Largeau
,
G. Patriarche
,
G. Saint-Girons
,
S. Bouchoule
Journal of Crystal Growth, 2004, 265 (1-2), pp.53-59
Journal articles
hal-01939879v1
|
|
Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
José Coelho
,
Gilles Patriarche
,
Frank Glas
,
Guillaume Saint-Girons
,
Isabelle Sagnes
Journal articles
hal-00003231v1
|
|
Room temperature laser operation of strained InGaAs∕GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge∕Si virtual substrate
Y. Chriqui
,
G. Saint-Girons
,
S. Bouchoule
,
J.-M. Moison
,
G. Isella
Electronics Letters, 2003, 39 (23), pp.1658
Journal articles
hal-01939874v1
|
|
Continuous-wave operation of monolithically grown 1.5-μm optically pumped vertical-external-cavity surface-emitting lasers
C. Symonds
,
I. Sagnes
,
A. Garnache
,
S. Hoogland
,
G. Saint-Girons
Journal articles
hal-00327170v1
|
|
Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands
M. Elkurdi
,
P. Boucaud
,
Sébastien Sauvage
,
G. Fishman
,
O. Kermarrec
Physica E: Low-dimensional Systems and Nanostructures, 2003, 16 (3-4), pp.450-454
Journal articles
hal-01939876v1
|
|
Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands
M. El Kurdi
,
P. Boucaud
,
Sébastien Sauvage
,
G. Fishman
,
O. Kermarrec
Physica E: Low-dimensional Systems and Nanostructures, 2003, 16 (3-4), pp.523-527
Journal articles
hal-01939875v1
|
|
Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
G. Saint-Girons
,
G. Patriarche
,
A. Mereuta
,
I. Sagnes
Journal of Applied Physics, 2002, 91 (6), pp.3859-3863
Journal articles
hal-01939863v1
|
|
Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power
A. Garnache
,
S. Hoogland
,
A. Tropper
,
I. Sagnes
,
G. Saint-Girons
Journal articles
hal-01939866v1
|
|
Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
G. Saint-Girons
,
I. Sagnes
Journal of Applied Physics, 2002, 91 (12), pp.10115
Journal articles
hal-01939864v1
|
|
Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3μm
G. Saint-Girons
,
G. Patriarche
,
L. Largeau
,
J Coelho
,
A Mereuta
Journal of Crystal Growth, 2002, 235 (1-4), pp.89-94
Journal articles
hal-01939862v1
|
|
Silicon–on–insulator waveguide photodetector with Ge/Si self-assembled islands
M. El Kurdi
,
P. Boucaud
,
Sabine Sauvage
,
G. Fishman
,
O. Kermarrec
Journal of Applied Physics, 2002, 92 (4), pp.1858-1861
Journal articles
hal-01939869v1
|
|
Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots
M. Elkurdi
,
P. Boucaud
,
Sabine Sauvage
,
O. Kermarrec
,
Y. Campidelli
Applied Physics Letters, 2002, 80 (3), pp.509-511
Journal articles
hal-01939868v1
|
|
Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission
J.C Harmand
,
G Ungaro
,
J. Ramos
,
E.V.K Rao
,
G. Saint-Girons
Journal articles
hal-01939856v1
|
|
Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
G. Saint-Girons
,
A. Mereuta
,
G. Patriarche
,
J.M. Gérard
,
I. Sagnes
Optical Materials, 2001, 17 (1-2), pp.263-266
Journal articles
hal-01939860v1
|
|
(InGa)(NAs)/GaAs structures emitting in 1–1.6 μm wavelength range
A. Mereuta
,
G. Saint-Girons
,
S. Bouchoule
,
I. Sagnes
,
F. Alexandre
Journal articles
hal-01939859v1
|
|
MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 [micro sign]m VCSELs
I. Sagnes
,
Gaël Le Roux
,
C. Meriadec
,
A. Mereuta
,
G. Saint-Girons
Electronics Letters, 2001, 37 (8), pp.500
Journal articles
hal-01939858v1
|
|
Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
Guillaume Saint-Girons
,
G. Patriarche
,
L. Largeau
,
J. Coelho
,
A. Mereuta
Applied Physics Letters, 2001, 79 (14), pp.2157-2159
Journal articles
hal-01939852v1
|
|
1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
Guillaume Saint-Girons
,
A Mereuta
,
G Gérard
,
A. Ramdane
,
I. Sagnes
Materials Science and Engineering: B, 2000, 78 (2-3), pp.145-147
Journal articles
hal-01939849v1
|