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Hervé Folliot
10
Documents
Identifiants chercheurs
- herve-folliot
- IdRef : 13913266X
- 0000-0002-1392-4865
Présentation
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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrateMaterials Science and Engineering: B, 2012, 177 (11), pp.882-886. ⟨10.1016/j.mseb.2012.03.053⟩
Article dans une revue
hal-00698574v1
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Achievement of InSb Quantum Dots on InP(100) SubstratesJapanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. ⟨10.1143/JJAP.49.060210⟩
Article dans une revue
hal-00489868v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès
hal-00809031v1
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337v1
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
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Transition fils boites dans le système InAs/InP (100)Journées de la Société Française de métallurgie et matériaux (SF2M), Jun 2009, Rennes, France. pp.W. Lu
Communication dans un congrès
hal-00486673v1
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InAs quantum dots grown on GaAsSb buffer layer lattice matched on InP2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures, Dec 2007, Paris, France. pp.W. Lu
Communication dans un congrès
hal-00486709v1
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