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Hervé Folliot
30
Documents
Identifiants chercheurs
- herve-folliot
- IdRef : 13913266X
- 0000-0002-1392-4865
Présentation
Publications
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Through investigation of mode-coupling in VECSELs: towards robust dual-frequency operation of a single-axis laserSPIE Photonics West - LASE 2020, Feb 2020, San Francisco, United States
Communication dans un congrès
hal-03019841v1
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Spectral Hole Burning Spectroscopy on Quantum Dashes and Quantum Dots for Dual-Frequency Laser EngineeringCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France. pp.1-2
Communication dans un congrès
hal-02290557v1
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Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSELCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, Japan. pp.1-2
Communication dans un congrès
hal-02290594v1
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1545 nm Quantum Dot Vertical Cavity Surface Emitting Laser with low thresholdCompound Semiconductor Week 2019 (CSW 2019), May 2019, Nara, France
Communication dans un congrès
hal-02290603v1
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1.5 µm Quantum Dots Spectral Hole Burning experiments for dual frequency laser engineering34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Communication dans un congrès
hal-01859151v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918669v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918734v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
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Carrier lifetime and relaxation dynamics in (In)GaAs/GaP quantum dotsInternational Symposium on Physics and Applications of Laser Dynamics IS-PALD, Oct 2013, Paris, France
Communication dans un congrès
hal-00918752v1
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France
Communication dans un congrès
hal-00918787v1
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès
hal-00809031v1
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337v1
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
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Polarization controlled quantum dashes VCSELs15th European Conference on Integrated Optics (ECIO 2010), Apr 2010, Cambridge, United Kingdom
Communication dans un congrès
hal-00485721v1
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Caractérisation dynamique de la stabilité de polarisation des VCSELs a fils quantiques pour la réalisation de sources telecom accordablesSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.15-17
Communication dans un congrès
hal-00589384v1
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Caractérisation dynamique de la stabilité de polarisation des VCSELs à fils quantiques pour les applications télécomJNOG 2010 : 29e journées nationales d'optique guidée, Oct 2010, Besançon, France
Communication dans un congrès
hal-00565930v1
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
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Structural & Spectroscopic Study of InAs/InP Quantum Dots for Dual-Frequency Laser Engineering16è Journées Nano, Micro et Optoélectronique (JNMO 2018), Jun 2018, Agay, France
Poster de conférence
hal-01859165v1
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Investigation of a Quantum Dot Vertical External-Cavity Surface-Emitting Laser: Towards THz Frequency Generation37è Journées Nationales d'Optique Guidée (JNOG 2017), Jul 2017, Limoges, France. 2017
Poster de conférence
hal-01693879v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Poster de conférence
hal-00918662v1
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