Hervé Morel

226
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Publications

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Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching

Thomas Vadebout , Pascal Bevilacqua , Valeria Rustichelli , Maroun Alam , Laurence Allirand et al.

Microelectronics Reliability, 2026, 178, pp.116024. ⟨10.1016/j.microrel.2026.116024⟩

Article dans une revue hal-05507060v1
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Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.

Key Engineering Materials, 2025, 1021, pp.1-6. ⟨10.4028/p-T0Vjdb⟩

Article dans une revue hal-05293324v1
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Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.

Key Engineering Materials, 2025, 1023, pp.1-6. ⟨10.4028/p-0v5tyE⟩

Article dans une revue hal-05293312v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Camille Sonneville et al.

Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩

Article dans une revue hal-04677726v1
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Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

Dominique Planson , Dominique Tournier , Camille Sonneville , Pascal Bevilacqua , Luong Viet Phung et al.

Materials Science in Semiconductor Processing, 2024, 178, pp.108444. ⟨10.1016/j.mssp.2024.108444⟩

Article dans une revue hal-04664143v1
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Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

Joao Oliveira , Jean-Michel Reynes , Hervé Morel , Pascal Frey , Olivier Perrotin et al.

Energies, 2024, 17, pp.5476. ⟨10.3390/en17215476⟩

Article dans une revue hal-04843993v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.

Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩

Article dans une revue hal-04276812v1
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First results on 1.2 kV SiC MOSFET body diode robustness tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles et al.

Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩

Article dans une revue hal-04282544v1
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Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions

Joao Oliveira , Pascal Frey , Hervé Morel , Jean-Michel Reynes , Jérémie Burky et al.

Microelectronics Reliability, 2023, 148, pp.115166. ⟨10.1016/j.microrel.2023.115166⟩

Article dans une revue hal-04316701v1
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Robust Regulation of a Power Flow Controller via Nonlinear Integral Action

Tanguy Simon , Mattia Giaccagli , Jean-François Trégouët , Daniele Astolfi , Vincent Andrieu et al.

IEEE Transactions on Control Systems Technology, 2023, 31 (4), pp.1636 - 1648. ⟨10.1109/TCST.2023.3236474⟩

Article dans une revue hal-03920401v1
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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson

Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩

Article dans une revue hal-04199489v1
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Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

O. Aviñó-Salvadó , Cyril Buttay , F. Bonet , C. Raynaud , P. Bevilacqua et al.

IEEE Transactions on Industrial Electronics, In press, ⟨10.1109/TIE.2023.3281705⟩

Article dans une revue hal-04147050v1
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Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Tamiris Grossl Bade , Hassan Hamad , Adrien Lambert , Hervé Morel , Dominique Planson

Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩

Article dans une revue hal-04121028v1
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Robust Nonlinear Control of a Power Flow Controller for Meshed DC Grids

Tanguy Simon , Jean-François Trégouët , Xuefang Lin-Shi , Hervé Morel

Control Engineering Practice, 2022, 131, ⟨10.1016/j.conengprac.2022.105389⟩

Article dans une revue hal-03860875v1
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Capacitance temperature dependence analysis of GaN-on-Si power transistors

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Matthew Charles , Marie-Anne Jaud et al.

Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩

Article dans une revue cea-03874112v1
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Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Ali Ammar , Luong Viêt Phung , Dominique Planson , Hervé Morel , Camille Sonneville

Materials Science Forum, 2022, 1062, pp.613-618. ⟨10.4028/p-vms03o⟩

Article dans une revue hal-03703994v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel et al.

Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩

Article dans une revue hal-03826217v1
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New Definition of Critical Energy for SiC MOSFET Robustness under Short- Circuit Operations: the Repetitive Critical Energy

C. Chen , Tien-Anh A Nguyen , D Labrousse , S Lefebvre , Cyril Buttay et al.

Microelectronics Reliability, 2020, 114, pp.113839. ⟨10.1016/j.microrel.2020.113839⟩

Article dans une revue hal-02968998v1
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Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Besar Asllani , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Luong Viet Phung et al.

Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩

Article dans une revue hal-02931290v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , Alberto Castellazzi , Dominique Planson , Hervé Morel

Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩

Article dans une revue hal-02060341v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , Jean-Baptiste Fonder , Beverley Choucoutou et al.

Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩

Article dans une revue hal-02060334v1
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Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

Layachi Boussouar , Hervé Morel , Bruno Allard , Cyril Buttay

International Journal of Power Electronics, 2019, 10 (3), pp.187. ⟨10.1504/ijpelec.2019.099337⟩

Article dans une revue hal-02121811v1
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10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization

Besar Asllani , Hervé Morel , Luong Viêt Phung , Dominique Planson

Energies, 2019, ⟨10.3390/en12234566⟩

Article dans une revue hal-02398585v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , Abderrahime Zaoui , Gregory Grosset , Dominique Planson et al.

Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩

Article dans une revue hal-02060228v1
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Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature

Oriol Aviño Salvado , Besar Asllani , Cyril Buttay , Christophe Raynaud , Hervé Morel

IEEE Transactions on Electron Devices, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩

Article dans une revue hal-02418097v1
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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Besar Asllani , Asad Fayyaz , Alberto Castellazzi , Hervé Morel , Dominique Planson

Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩

Article dans une revue hal-01889461v1
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SiC MOSFETs robustness for diode-less applications

Oriol Aviño Salvado , C. Cheng , Cyril Buttay , Hervé Morel , D Labrousse et al.

EPE Journal - European Power Electronics and Drives, 2018, pp.1 - 8. ⟨10.1080/09398368.2018.1456836⟩

Article dans une revue hal-01844980v1
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Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Oriol Aviño Salvado , Hervé Morel , Cyril Buttay , Denis Labrousse , Stéphane Lefebvre

Microelectronics Reliability, 2018, 88-90, pp.636-640. ⟨10.1016/j.microrel.2018.06.033⟩

Article dans une revue hal-01895791v1

A spiral planar inductor: An experimentally verified physically based model for frequency and time domains

Aymen Ammouri , Tarek Ben Salah , Hervé Morel

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2017, pp.e2272. ⟨10.1002/jnm.2272⟩

Article dans une revue hal-01626146v1
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SiC power devices packaging with a short-circuit failure mode capability

Ilyas Dchar , Cyril Buttay , Hervé Morel

Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.07.003⟩

Article dans une revue hal-01562547v1
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A Novel Approach to Accurately Determine the tq Parameter of Thyristors

Hatem Garrab , Atef Jedidi , Hervé Morel , Kamel Besbes

IEEE Transactions on Industrial Electronics, 2017, 64 (1), pp.206 - 216. ⟨10.1109/tie.2016.2609381⟩

Article dans une revue hal-01617496v1
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Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling

Wissam Sabbah , Faical Arabi , Oriol Aviño Salvado , Cyril Buttay , Loic Théolier et al.

Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.091⟩

Article dans une revue hal-01562549v1
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Evaluation of printed-circuit boards materials for high temperature operation

Oriol Aviño Salvado , Wissam Sabbah , Cyril Buttay , Hervé Morel , Pascal Bevilacqua

Journal of Microelectronics and Electronic Packaging, 2017, 14 (4), ⟨10.4071/imaps.516313⟩

Article dans une revue hal-01674483v1
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Electrical, thermal and mechanical properties of poly-etherimide epoxy-diamine blend

Nour Halawani , Jean-Louis Augé , Hervé Morel , O. Gain , S. Pruvost

Composites Part B: Engineering, 2017, -, 110 (-), pp.530 - 541. ⟨10.1016/j.compositesb.2016.11.022⟩

Article dans une revue hal-01626136v1
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High temperature ageing of microelectronics assemblies with SAC solder joints

Wissam Sabbah , Pierre Bondue , Oriol Aviño Salvado , Cyril Buttay , Héìène Frémont et al.

Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.065⟩

Article dans une revue hal-01564755v1

The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case

Atef Jedidi , Hatem Garrab , Hervé Morel , Kamel Besbes

Journal of Power Electronics, 2017, 17 (2), pp.561 - 569. ⟨10.6113/jpe.2017.17.2.561⟩

Article dans une revue hal-01626139v1

A Control Strategy of DC Building Microgrid Connected to the Neighborhood and AC Power Network

Thi Thuong Huyen Ma , Hamed Yahoui , Hoang Giang Vu , Nicolas Siauve , Hervé Morel

Buildings, 2017, 7 (2), ⟨10.3390/buildings7020042⟩

Article dans une revue hal-01626141v1
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Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung et al.

Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩

Article dans une revue hal-01391838v1
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Avalanche robustness of SiC Schottky diode

Ilyas Dchar , Cyril Buttay , Hervé Morel

Microelectronics Reliability, 2016, ⟨10.1016/j.microrel.2016.07.086⟩

Article dans une revue hal-01373039v1
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A Novel approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems

Atef Jedidi , Hatem Garrab , Hervé Morel , Kamel Besbes

IEEE Transactions on Industrial Electronics, 2015, 62 (4), ⟨10.1109/TIE.2014.2356440⟩

Article dans une revue hal-01388299v1

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

Sameh Mtimet , Walid Ben Salah , Salah Tarek Ben , Ferid Kourda , Hervé Morel

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (3), pp. 287-300. ⟨10.1002/jnm.2005⟩

Article dans une revue istex hal-01388318v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.

Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩

Article dans une revue hal-01387983v1
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Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickael Petit , Cyril Buttay et al.

Microelectronics Reliability, 2015, pp.6. ⟨10.1016/j.microrel.2015.06.097⟩

Article dans une revue hal-01198584v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole et al.

Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342

Article dans une revue hal-01626119v1

Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET

Sami Ghedira , Cyril Buttay , Hervé Morel , Kamel Besbes

European Physical Journal: Applied Physics, 2014, 66 (2), pp.20103. ⟨10.1051/epjap/2014130533⟩

Article dans une revue istex hal-01005929v1

Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

Hervé Morel , Aymen Ammouri , Walid Ben Salah , Sofiane Khachroumi , Tarek Ben Salah et al.

European Physical Journal: Applied Physics, 2014, 66 (2), pp.20901. ⟨10.1051/epjap/2014130430⟩

Article dans une revue istex hal-01006044v1
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LVDC: An Efficient Energy Solution for On-Grid Photovoltaic Applications

Anis Ammous , Hervé Morel

Smart Grid and Renewable Energy, 2014, 5 (4), pp.63-76. ⟨10.4236/sgre.2014.54007⟩

Article dans une revue hal-01005973v1
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Die attach using silver sintering. Practical implementation and analysis

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.

European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩

Article dans une revue hal-00874465v1
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Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters

Rémi Robutel , Christian Martin , Cyril Buttay , Hervé Morel , Paulo Mattavelli et al.

IEEE Transactions on Power Electronics, 2013, PP (99), pp.1. ⟨10.1109/TPEL.2013.2279772⟩

Article dans une revue hal-00874455v1
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Thermal Stability of Silicon Carbide Power JFETs

Cyril Buttay , Rémy Ouaida , Hervé Morel , Dominique Bergogne , Christophe Raynaud et al.

IEEE Transactions on Electron Devices, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩

Article dans une revue hal-00881667v1

Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages

Dominique Bergogne , Cyril Buttay , Rémi Robutel , Fabien Dubois , Rémy Ouaida et al.

EPE Journal - European Power Electronics and Drives, 2013, 23 (3), pp.5--12

Article dans une revue hal-00997389v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne et al.

Materials Science Forum, 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩

Article dans une revue hal-00799884v1

Normally-On SIC JFETs: Active Protections

Fabien Dubois , Dominique Bergogne , Cyril Buttay , Hervé Morel , Régis Meuret

EPE Journal - European Power Electronics and Drives, 2012, 22 (3), pp.6-13

Article dans une revue hal-00821756v1
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Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding

Bassem Mouawad , Maher Soueidan , D. Fabregue , Cyril Buttay , Bruno Allard et al.

IEEE Transactions on Components and Packaging Technologies, 2012, 2 (4), pp.553 - 560. ⟨10.1109/TCPMT.2012.2186453⟩

Article dans une revue hal-00672244v1
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Full densification of Molybdenum powders using Spark Plasma Sintering

Bassem Mouawad , Maher Soueidan , D. Fabregue , Cyril Buttay , Vincent Bley et al.

Metallurgical and Materials Transactions A, 2012, pp.1-8. ⟨10.1007/s11661-012-1144-2⟩

Article dans une revue hal-00707782v1

Nonlinear average modeling of multilevel converters

B. Omri , Kaiçar Ammous , Anis Ammous , Hervé Morel

International Review on Modelling and Simulations, 2012, 5 (1), pp.154-163

Article dans une revue hal-00747412v1
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Thermal stability of silicon-carbide power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli et al.

IEEE Transactions on Electron Devices, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩

Article dans une revue hal-00672440v1

Optimal design of power converter using multi-objective genetic algorithm

H. Mejbri , Kaiçar Ammous , Hervé Morel , Anis Ammous

International Review on Modelling and Simulations, 2012, 5 (2), pp.793-802

Article dans une revue hal-00747409v1

Multi-Objective Optimization of Power Converter Sizing Based on Genetic Algorithms: Application to Photovoltaic Systems

Hanen Mejbri , Hervé Morel , Kaiçar Ammous , Anis Ammous

International Review on Modelling and Simulations, 2012, 5 (2), pp. 826-839

Article dans une revue hal-00854436v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.

Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩

Article dans une revue hal-00799902v1

Inverse Models of Voltage and Current Probes

Kaiçar Ammous , Hervé Morel , Anis Ammous

IEEE Transactions on Instrumentation and Measurement, 2011, 60 (12), pp.3898 - 3906. ⟨10.1109/TIM.2011.2144710⟩

Article dans une revue hal-00629210v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.

Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩

Article dans une revue istex hal-00597432v1

Characterization and VHDL-AMS modeling of SiC-JFET transistor

Rami Mousa , Dominique Planson , Hervé Morel

European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩

Article dans une revue istex hal-00747438v1

Design of a High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Rémi Robutel , Christian Martin , Hervé Morel , Cyril Buttay , Nicolas Gazel et al.

Journal of Microelectronics and Electronic Packaging, 2011, 8 (1), pp.23-30

Article dans une revue hal-00729066v1

Modelling, analysis, and experimental study of SiC JFET body diode

Tarek Ben Salah , Y. Lahbib , Hervé Morel

European Physical Journal: Applied Physics, 2011, 53 (1), pp.Article Number: 10301. ⟨10.1051/epjap/2010100172⟩

Article dans une revue istex hal-00579353v1

SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation

Tarek Ben Salah , Sameh Mtimet , Hervé Morel

Sensor letters, 2011, 9 (6), pp.2347-2350. ⟨10.1166/sl.2011.1762⟩

Article dans une revue hal-00747433v1
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Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson

Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩

Article dans une revue hal-02186368v1
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Analysis of Power Switching Losses Accounting Probe Modeling

Kaiçar Ammous , Hervé Morel , Anis Ammous

IEEE Transactions on Instrumentation and Measurement, 2010, 59 (12), pp.3218 - 3226. ⟨10.1109/TIM.2010.2047302⟩

Article dans une revue hal-00539180v1

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Tarek Ben Salah , Sofiane Khachroumi , Hervé Morel

Sensors, 2010, 10 (1), pp.388-399. ⟨10.3390/s100100388⟩

Article dans une revue hal-00476196v1

Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor

Olivier Berry , Youness Hamieh , Stéphane Rael , Farid Meibody-Tabar , Sébastien Vieillard et al.

Materials Science Forum, 2010, 645-6648, pp.957-960. ⟨10.4028/www.scientific.net/MSF.645-64⟩

Article dans une revue hal-00539615v1

Toward SiC-JFETs modelling with temperature dependence

Tarek Ben Salah , Hervé Morel , Sameh Mtimet

European Physical Journal: Applied Physics, 2010, 52 (2), pp.Article number 20301. ⟨10.1051/epjap/2010139⟩

Article dans une revue istex hal-00539603v1

Reduced-Order Thermal Behavioral Model Based on Diffusive Representation

Bruno Allard , Xavier Jordà , Pierre Bidan , Axel Rumeau , Hervé Morel et al.

IEEE Transactions on Power Electronics, 2009, 24 (12), pp.2833-2846. ⟨10.1109/TPEL.2009.2028231⟩

Article dans une revue hal-00476198v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩

Article dans une revue hal-04368124v1

SiC-VJFETs power switching devices: an improved model and parameter optimization technique

Tarek Ben Salah , Y. Lahbib , Hervé Morel

European Physical Journal: Applied Physics, 2009, 48 (3), pp.Article Number: 30305. ⟨10.1051/epjap/2009187⟩

Article dans une revue istex hal-00476199v1

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Pierre Lefranc , Dominique Planson , Hervé Morel , Dominique Bergogne

Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩

Article dans une revue istex hal-00476201v1
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Jawad Ul Hassan , Pascal Bevilacqua et al.

Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩

Article dans une revue hal-04368136v1

Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

Tarek Ben Salah , Mahbouba Amairi , Zina Sassi , Hervé Morel

Sensor letters, 2009, 7 (5), pp.707-711. ⟨10.1166/sl.2009.1135⟩

Article dans une revue hal-00476197v1

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.

Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩

Article dans une revue hal-04452237v1
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On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior

Bruno Allard , Hatem Garrab , Tarek Ben Salah , Hervé Morel , Kaiçar Ammous et al.

IEEE Transactions on Power Electronics, 2008, 23 (1), pp.491-494. ⟨10.1109/TPEL.2007.911882⟩

Article dans une revue hal-00313945v1

Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes

S. Abis , Kaiçar Ammous , Hervé Morel , Anis Ammous

International Review of Electrical Engineering, 2007, 4 (2), pp.544-556

Article dans une revue hal-00357024v1

A novel approach to extract accurate design parameters of PiN diode

Tarek Ben Salah , Sami Ghedira , Hatem Garrab , Hervé Morel , Damien Risaletto et al.

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2007, 20 (6), pp.283-297. ⟨10.1002/jnm.646⟩

Article dans une revue istex hal-00358834v1
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Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes

Tarek Ben Salah , Cyril Buttay , Bruno Allard , Hervé Morel , Sami Ghedira et al.

IEEE Transactions on Power Electronics, 2007, 22 (1), pp.13-20. ⟨10.1109/TPEL.2006.886648⟩

Article dans une revue hal-00135198v1
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Model Requirements for Simulation of Low-Voltage MOSFET in Automotive Applications

Cyril Buttay , Hervé Morel , Bruno Allard , Pierre Lefranc , Olivier Brevet

IEEE Transactions on Power Electronics, 2006, 21 (3), pp.613-624. ⟨10.1109/TPEL.2006.872383⟩

Article dans une revue hal-00138878v1

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

Tarek Ben Salah , Hatem Garrab , Sami Ghedira , Bruno Allard , Damien Risaletto et al.

Superlattices and Microstructures, 2006, 40 (4-6), pp.580-587

Article dans une revue hal-00140085v1

Electro-thermal simulation including a temperature distribution inside power semiconductor devices

Bruno Allard , Hatem Garrab , Hervé Morel

International Journal of Electronics, 2005, 92 (4), pp.189-213

Article dans une revue hal-00140854v1
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Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar et al.

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩

Article dans une revue hal-01702019v1
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On the extraction of PiN diode design parameters for validation of integrated power converter design

Hatem Garrab , Bruno Allard , Hervé Morel , Kaiçar Ammous , Sami Ghedira et al.

IEEE Transactions on Power Electronics, 2005, 20 (3), pp.660-670. ⟨10.1109/TPEL.2005.846544⟩

Article dans une revue hal-00140858v1
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Avalanche Behavior of Low-Voltage Power MOSFETs

Cyril Buttay , Tarek Ben Salah , Dominique Bergogne , Bruno Allard , Hervé Morel et al.

IEEE Power Electronics Letters, 2004, 2 (3), pp.104-107. ⟨10.1109/LPEL.2004.839638⟩

Article dans une revue hal-00138863v1

Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation

Hatem Garrab , Bruno Allard , Hervé Morel , Sami Ghedira , Kamel Besbes

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2004, 17 (6): 539-560 NOV-DEC 2004 (6), pp.539-560

Article dans une revue hal-00140093v1

Developing an advanced PWM-switch model including semiconductor device non-linearities

Anis Ammous , M. Ayedi , Y. Ounajjar , Fayçal Sellami , Kaiçar Ammous et al.

European Physical Journal: Applied Physics, 2003, 21 (2), pp.107-120

Article dans une revue hal-00140101v1

Developing an equivalent thermal model for discrete semiconductor packages

Anis Ammous , Fayçal Sellami , Kaiçar Ammous , Hervé Morel , Bruno Allard et al.

International Journal of Thermal Sciences, 2003, 42 (5), pp.533-539

Article dans une revue hal-00140112v1

Modèle moyen de l'onduleur triphasé de tension pour la conception de lois de commande

Bruno Allard , Hervé Morel , Xuefang Lin-Shi , Jean-Marie Rétif

European Journal of Electrical Engineering, 2002, 5 (1), pp.183-201. ⟨10.3166/rige.5.183-201⟩

Article dans une revue istex hal-00403393v1

Non-linear control design for a boost converter using bond graphs

Xuefang Lin-Shi , Jean-Marie Rétif , Bruno Allard , Hervé Morel

Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering, 2002, 216 (I1), pp.1-11

Article dans une revue hal-00140094v1
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On the validity of the standard SPICE model of the diode for simulation in power electronics

Nouri Massmoudi , Djébé M'Baïri , Bruno Allard , Hervé Morel

IEEE Transactions on Industrial Electronics, 2001, 48 (4), pp.864-867

Article dans une revue hal-00140095v1
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Electrothermal modeling of IGBT's: Application to short-circuit conditions

Anis Ammous , Kaiçar Ammous , Hervé Morel , Bruno Allard , Dominique Bergogne et al.

IEEE Transactions on Power Electronics, 2000, 15 (4), pp.778-790

Article dans une revue hal-00140098v1
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Choosing a thermal model for electrothermal simulation of power semiconductor devices

Anis Ammous , Sami Ghedira , Bruno Allard , Hervé Morel , Denise Renault

IEEE Transactions on Power Electronics, 1999, 14 (2), pp.300-307

Article dans une revue hal-00140099v1
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Transient temperature measurements and modeling of IGBT's under short circuit

Anis Ammous , Bruno Allard , Hervé Morel

IEEE Transactions on Power Electronics, 1998, 13 (1), pp.12-25

Article dans une revue hal-00140100v1
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Les composants de puissance : état de l'art, les évolutions

Jean-Pierre Chante , Bruno Allard , Dominique Bergogne , Francis Calmon , René Elhinger et al.

Revue Internationale de Génie Electrique, RIGE, 1998

Article dans une revue hal-02117240v1
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MODELING OF A NONLINEAR CONDUCTIVE MAGNETIC-CIRCUIT .2. BOND GRAPH FORMULATION

H. Fraisse , Jean-Pierre Masson , F. Marthouret , Hervé Morel

IEEE Transactions on Magnetics, 1995, 31 (6), pp.4068-4070

Article dans une revue hal-00140102v1
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STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH

Hervé Morel , S. H. Gamal , Jean-Pierre Chante

IEEE Transactions on Power Electronics, 1994, 9 (1), pp.112-120

Article dans une revue hal-00140103v1
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Analysis of Robustness of 650 V GaN HEMT under Repetitive Short-Circuits

Adrien Lambert , Hervé Morel , Pascal Bevilacqua , D. Tournier , Laurent Guillot et al.

ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France

Communication dans un congrès hal-05323083v1
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Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching

Thomas Vadebout , Pascal Bevilacqua , Valeria Rustichelli , Maroun Alam , Laurence Allirand et al.

ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France

Communication dans un congrès hal-05323111v1
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Aging of p-GaN gate HEMTs under hard-switching conditions

Ababacar Diouf , Valeria Rustichelli , Loris Pace , Emmanuel Marcault , Maroun Alam et al.

ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France

Communication dans un congrès hal-05323081v1
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Étude de la fiabilité des GaN SP-HEMT sous surtensions en commutation dure

Thomas Vadebout , Pascal Bevilacqua , Valeria Rustichelli , Hervé Morel , Maroun Alam et al.

Symposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France

Communication dans un congrès hal-05495813v1
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Méthode d'étude de fiabilité de MOSFET SiC mis en parallèle soumis à une avalanche

Aude Valat-Marty , Joao Oliveira , Marco Andrade , Pascal Bevilacqua , Maximin Blanc et al.

Symposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France

Communication dans un congrès hal-05506660v1
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Méthode d'étude de fiabilité de MOSFET SiC mis en parallèle soumis à une avalanche

Aude Valat-Marty , Joao Oliveira , Marco Andrade , Pascal Bevilacqua , Maximin Blanc et al.

Symposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France

Communication dans un congrès hal-05506696v1
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128

Communication dans un congrès hal-04677764v1
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Repetitive Short-circuits on 650 V GaN

Adrien Lambert , Hervé Morel , Dominique Planson , Luong Viêt Phung , Dominique Tournier et al.

PCIM Europe 2024, Jun 2024, Nuremberg, Germany

Communication dans un congrès hal-04626451v1

Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs

Joao Oliveira , Regis Meuret , Fabio Coccetti , Roman Boldyrjew-Mast , Clemens Herrmann et al.

13th International Conference on Integrated Power Electronics Systems, CIPS 2024, Mar 2024, Dusseldorf, Germany. pp.Pages 467 - 475

Communication dans un congrès hal-04974583v1
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.

International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592

Communication dans un congrès hal-04680725v1
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V

Adrien Lambert , Hervé Morel , D. Tournier , Dominique Planson , Luong Viêt Phung et al.

5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France

Communication dans un congrès hal-04150168v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau et al.

ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy

Communication dans un congrès hal-04221605v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , Régis Meuret et al.

34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France

Communication dans un congrès hal-04240602v1
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New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices

Joao Oliveira , Bernardo Cougo , Fabio Coccetti , Stephane Azzopardi , Hervé Morel

European Conference on Power Electronics and Applications, Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264294⟩

Communication dans un congrès hal-04316671v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville et al.

ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy

Communication dans un congrès hal-04222211v1
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Application of the Double Source Switching Test to GaN HEMTs

Tamiris Grossl Bade , Maroun Alam , Hervé Morel , Dominique Planson

25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩

Communication dans un congrès hal-04225311v1
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Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics

Hervé Morel , Maroun Alam , Pascal Bevilacqua , D. Tournier , Dominique Planson

Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France

Communication dans un congrès hal-04224402v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar et al.

25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩

Communication dans un congrès hal-04203163v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar et al.

IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩

Communication dans un congrès hal-04147862v1

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson

International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India

Communication dans un congrès hal-03990840v1
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Maroun Alam , Hervé Morel , Luong Viêt Phung , Dominique Planson , A. Yvon

2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩

Communication dans un congrès hal-03887865v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.

2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩

Communication dans un congrès hal-03856578v1
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Stéphane Becu , Matthew Charles et al.

SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan

Communication dans un congrès cea-03875079v1
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Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC Microgrids

Xuefang Lin-Shi , Tanguy Simon , Jean-François Trégouët , Hervé Morel

PEAS, Nov 2021, Shanghai, China. ⟨10.1109/PEAS53589.2021.9628872⟩

Communication dans un congrès hal-03375502v1
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications

Joao Oliveira , Ali Alhoussen , Florent Loiselay , Hervé Morel , Dominique Planson

EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩

Communication dans un congrès hal-03260519v1
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Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design

Tanguy Simon , Mattia Giaccagli , Jean-François Trégouët , Daniele Astolfi , Vincent Andrieu et al.

CDC, Dec 2021, Austin, United States. ⟨10.1109/CDC45484.2021.9682901⟩

Communication dans un congrès hal-03375498v1
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Modelling and Control of a Power Flow Controller for DC Microgrids

Tanguy Simon , Jean-François Trégouët , Hervé Morel , Xuefang Lin-Shi

EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570493⟩

Communication dans un congrès hal-03360965v1
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Besar Asllani , Hervé Morel , Pascal Bevilacqua , Dominique Planson

EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩

Communication dans un congrès hal-02945919v1
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Analysis of Parasitic Elements in Power Modules Based on GaN Components

Joao Oliveira , Hervé Morel , Dominique Planson , Florent Loiselay

PCIM Europe 2020, Jul 2020, Nuremberg, Germany

Communication dans un congrès hal-02945892v1
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Joao Oliveira , Florent Loiselay , Hervé Morel , Dominique Planson

EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩

Communication dans un congrès hal-02945913v1
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Static characteristics of 5 kV SiC BJTs and Darlington’s

Besar Asllani , Dominique Planson , Hervé Morel , T Lagier

International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan

Communication dans un congrès hal-02428513v1
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Besar Asllani , Hervé Morel , Dominique Planson , Asad Fayyaz , Alberto Castellazzi

ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩

Communication dans un congrès hal-01984359v1
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Benefits of GaN transistors and embedding in PCB laminates

Cyril Buttay , Christian Martin , Charles Joubert , Hervé Morel , Bruno Allard et al.

SIA Power Train & Electronics, Jun 2019, Paris, France

Communication dans un congrès hal-02291496v1
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V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Besar Asllani , Alberto Castellazzi , Oriol Aviño Salvado , Asad Fayyaz , Hervé Morel et al.

IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩

Communication dans un congrès hal-02099781v1
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Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Ilyas Dchar , Cyril Buttay , Hervé Morel

APEC, Mar 2019, Anaheim, Californie, United States. ⟨10.1109/APEC.2019.8722126⟩

Communication dans un congrès hal-02076181v1
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An investigation of current distribution over four GaN HEMTs in parallel configurations

Thilini Wickramasinghe , Cyril Buttay , Christian Martin , Hervé Morel , Pascal Bevilacqua et al.

The 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Oct 2019, Raleigh, United States. ⟨10.1109/WiPDA46397.2019.8998816⟩

Communication dans un congrès hal-02405882v1
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A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices

Thilini Wickramasinghe , Bruno Allard , Cyril Buttay , Charles Joubert , Christian Martin et al.

45th IEEE IECON, Oct 2019, Lisbonne, Portugal. ⟨10.1109/IECON.2019.8927490⟩

Communication dans un congrès hal-02405883v1
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Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin , Mehdi Kanoun , Christophe Raynaud , Hervé Morel

2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩

Communication dans un congrès hal-01942728v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , J B Fonder , B Choucoutou et al.

ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2

Communication dans un congrès hal-01985994v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , A Castellazzi , Dominique Planson , Hervé Morel

ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04

Communication dans un congrès hal-02428531v1
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Microréseaux DC : avantages des réseaux maillés

Hervé Morel , Loïc Michel , Guy Clerc , Pascal Bevilacqua , Mohamed Barara et al.

Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France

Communication dans un congrès hal-02134229v1
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Repetitive short-circuit measurement on SiC MOSFET

Quentin Molin , Christophe Raynaud , Mehdi Kanoun , Hervé Morel

ECSCRM'18, Sep 2018, Birmingham, United Kingdom

Communication dans un congrès hal-01980834v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , A. Zaoui , G Grosset , Dominique Planson et al.

ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5

Communication dans un congrès hal-02428523v1

An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module

Malorie Hologne , Pascal Bevilacqua , Bruno Allard , Guy Clerc , Hervé Morel et al.

IEMDC, May 2017, Miami, FL, United States. pp.MO263, ⟨10.1109/IEMDC.2017.8002028⟩

Communication dans un congrès hal-01532058v1
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Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors

Hugo Reynes , Cyril Buttay , Hervé Morel

WiPDA, Oct 2017, Albuquerque, United States. ⟨10.1109/WiPDA.2017.8170581⟩

Communication dans un congrès hal-01645029v1
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Improved Layout of Inverter for EMC Analysis

Ousseynou Yade , Christian Martin , Christian Vollaire , Arnaud Bréard , Marwan Ali et al.

More Electrical Aircraft (MEA), Feb 2017, Bordeaux, France

Communication dans un congrès hal-01715021v1
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Evaluation of printed-circuit boards materials for high temperature operation

Oriol Aviño Salvado , Wissam Sabbah , Cyril Buttay , Hervé Morel , Pascal Bevilacqua

HiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom

Communication dans un congrès hal-01565131v1
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Robustness of SiC MOSFET under avalanche conditions

Ilyas Dchar , Marion Zolkos , Cyril Buttay , Hervé Morel

APEC, Mar 2017, Tampa, FL, United States. pp.2263-2268, ⟨10.1109/APEC.2017.7931015⟩

Communication dans un congrès hal-01535735v1

Étude de la robustesse de l’oxyde de grille pour des applications aéronautiques

Oriol Aviño Salvado , Hervé Morel , Cyril Buttay

JCGE, May 2017, Arras, France. pp.146345

Communication dans un congrès hal-01534712v1

Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-grids

Mohamed Barara , Hervé Morel , Guy Clerc

International conference on components and systems for DC grids, Mar 2017, Grenoble, France

Communication dans un congrès hal-01793569v1

Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker

Thi Thuong Huyen Ma , Hamed Yahoui , Fedia Baccar El Boubkari , Hervé Morel , Hoang-Giang Vu et al.

COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique

Communication dans un congrès hal-01639199v1
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Analyse de la robustesse des MOSFET SiC pour les applications diode-less

Oriol Aviño Salvado , Cheng Chen , Cyril Buttay , Hervé Morel , Denis Labrousse et al.

Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France

Communication dans un congrès hal-01361711v1
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State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications

Layal Ghossein , Florent Morel , Hervé Morel , Piotr Dworakowski

PCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD

Communication dans un congrès hal-01316570v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil et al.

CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩

Communication dans un congrès hal-01388019v1

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung et al.

International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy

Communication dans un congrès hal-02138529v1
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Robustness of SiC MOSFETs in short-circuit mode

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickaël Petit , Cyril Buttay et al.

PCIM Europe 2015, May 2015, Nuremberg, Germany

Communication dans un congrès hal-01196528v1
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Considerations for High Temperature Power Electronics

Bruno Allard , Cyril Buttay , Christian Martin , Hervé Morel

18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia

Communication dans un congrès hal-01372146v1

High temperature operation of SiC transistors

Cyril Buttay , Marwan Ali , Oriol Aviño Salvado , Hervé Morel , Bruno Allard

Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States

Communication dans un congrès hal-01373030v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.

ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61

Communication dans un congrès hal-02133686v1

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickael Petit , Cyril Buttay et al.

ESREF, Oct 2015, Toulouse, France. pp.1708-1713

Communication dans un congrès hal-01700463v1
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Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique

Marc Petit , Seddik Bacha , Xavier Guillaud , Hervé Morel , Dominique Planson et al.

1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France

Communication dans un congrès hal-01065154v1
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Estimation des pertes dans les transistors bipolaires SiC

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Cyril Buttay , Hervé Morel

Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France

Communication dans un congrès hal-01065220v1
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Power Loss Estimation in SiC Power BJTs

Chen Cheng , Denis Labrousse , Stéphane Lefebvre , Hervé Morel , Cyril Buttay et al.

PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p

Communication dans un congrès hal-00997718v1
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Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes

Xavier Fonteneau , Florent Morel , Cyril Buttay , Hervé Morel , Philippe Lahaye

APEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, ⟨10.1109/APEC.2013.6520668⟩

Communication dans un congrès hal-00829353v1
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SiC Vertical JFET Pure Diode-Less Inverter Leg

Rémy Ouaida , Xavier Fonteneau , Fabien Dubois , Dominique Bergogne , Florent Morel et al.

APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩

Communication dans un congrès hal-00829343v1
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Analysis of the SiC VJFET gate punch-through and its dependence with the temperature

Fabien Dubois , Dominique Bergogne , Dominique Tournier , Cyril Buttay , Régis Meuret et al.

EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩

Communication dans un congrès hal-00874655v1

High Temperature Ageing of Fe-based Nanocrystalline Ribbons

Christian Martin , Rémi Robutel , Cyril Buttay , Fabien Sixdenier , Pascal Bevilacqua et al.

HiTEC 2012, May 2012, Albuquerque, United States. 6p

Communication dans un congrès hal-00760373v1
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3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules

Bassem Mouawad , Cyril Buttay , Maher Soueidan , Hervé Morel , Bruno Allard et al.

7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438

Communication dans un congrès hal-00707741v1

A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs

Fabien Dubois , Stéphane Sorel , Sonia Dhokkar , Régis Meuret , Dominique Bergogne et al.

ECCE, Sep 2012, Raleigh, United States. pp.3581, ⟨10.1109/ECCE.2012.6342486⟩

Communication dans un congrès hal-00739021v1
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Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications

Bassem Mouawad , Cyril Buttay , Maher Soueidan , Hervé Morel , Vincent Bley et al.

ISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩

Communication dans un congrès hal-00707820v1

Temperature dependence of silicon and silicon carbide power devices: An experimental analysis

Mahbouba Amairi , Sameh Mtimet , Tarek Ben Salah , Hervé Morel

MELECON 2012, Mar 2012, Tunis, Tunisia. pp.97 - 101, ⟨10.1109/MELCON.2012.6196389⟩

Communication dans un congrès hal-00747425v1

Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode

Xavier Fonteneau , Florent Morel , Hervé Morel , Philippe Lahaye , Eliana Rondon

ECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩

Communication dans un congrès hal-00739006v1

An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

Dominique Bergogne , Fabien Dubois , Christian Martin , Khalil El Falahi , Luong Viet Phung et al.

HiTEC 2012, May 2012, Albuquerque, United States. 6p

Communication dans un congrès hal-00760366v1
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Report de puce par frittage d'argent - mise en oeuvre et analyse

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.

14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)

Communication dans un congrès hal-00729156v1
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Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC

Xavier Fonteneau , Florent Morel , Hervé Morel , Philippe Lahaye , Didier Léonard

14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24)

Communication dans un congrès hal-00729345v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne et al.

CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p

Communication dans un congrès hal-00759975v2

Active protections for normally-on SiC JFETs

Fabien Dubois , Damien Risaletto , Dominique Bergogne , Hervé Morel , Cyril Buttay et al.

EPE, Aug 2011, Birmingham, United Kingdom. pp.CD

Communication dans un congrès hal-00629227v1

Thermal requirements of SiC Power Devices

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli et al.

6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France

Communication dans un congrès hal-00672631v1
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High-temperature die-attaches for SiC power devices

Amandine Masson , Cyril Buttay , Hervé Morel , Christophe Raynaud , Stanislas Hascoët et al.

EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161

Communication dans un congrès hal-00672602v1

A multi-physics model of the VJFET with a lateral channel

Hervé Morel , Youness Hamieh , Dominique Tournier , Rémi Robutel , Fabien Dubois et al.

EPE, Aug 2011, Birmingham, United Kingdom. pp.CD

Communication dans un congrès hal-00629220v1

Integrated common mode capacitors for SiC JFET inverters

Rémi Robutel , Christian Martin , Hervé Morel , Paulo Mattavelli , Dushan Boroyevitch et al.

APEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩

Communication dans un congrès hal-00618665v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.

CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD

Communication dans un congrès hal-00661500v1
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Higher temperature power electronics for larger-scale mechatronic integration

Bruno Allard , Cyril Buttay , Dominique Tournier , Rémi Robutel , Jean-François Mogniotte et al.

Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination)

Communication dans un congrès hal-00687139v1

High-temperature behavior of SiC power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Mihai Lazar , Gabriel Civrac et al.

EPE, Aug 2011, Birmingham, United Kingdom. pp.CD

Communication dans un congrès hal-00629225v1

Ultrafast safety system to turn-off normally on SiC JFETs

Fabien Dubois , Dominique Bergogne , Damien Risaletto , Rémi Perrin , Abderrahime Zaoui et al.

EPE, Aug 2011, Birmingham, United Kingdom. pp.CD

Communication dans un congrès hal-00629232v1
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

Cyril Buttay , Amandine Masson , Jianfeng Li , Mark C. Johnson , Mihai Lazar et al.

HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7

Communication dans un congrès hal-00672619v1

SIC inverter optimization for high temperature applications

Régis Meuret , Olivier Berry , Fabien Dubois , Youness Hamieh , Stéphane Raël et al.

27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France

Communication dans un congrès hal-02937166v1

Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)

Dominique Bergogne , Olivier Berry , Sonia Dhokkar , Youness Hamieh , Farid Meibody-Tabar et al.

13ème EPF, Jun 2010, Saint-Nazaire, France

Communication dans un congrès hal-00618715v1

Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Rémi Robutel , Christian Martin , Hervé Morel , Cyril Buttay , Dominique Bergogne et al.

HiTEC 2010, May 2010, Albuquerque, United States. pp.000236

Communication dans un congrès hal-00485284v1

Caractérisation des non-linéarités dans les condensateurs céramiques haute température

Rémi Robutel , Christian Martin , Cyril Buttay , Hervé Morel , Régis Meuret

13ème EPF, Jun 2010, Saint-Nazaire, France

Communication dans un congrès hal-00618657v1

High Temperature Inverter for Airborne Application

Fabien Dubois , Dominique Bergogne , Damien Risaletto , Rémi Robutel , Hervé Morel et al.

HiTEC 2010, May 2010, Albuquerque, United States. pp.000222

Communication dans un congrès hal-00485279v1

Normally-On SiC JFETs in power converters: Gate driver and safe operation

Dominique Bergogne , Damien Risaletto , Fabien Dubois , Asif Hammoud , Hervé Morel et al.

6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD

Communication dans un congrès hal-00629214v1

Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance

Damien Risaletto , Dominique Bergogne , Fabien Dubois , Hervé Morel , Cédric Ruby et al.

13ème EPF, Jun 2010, Saint-Nazaire, France

Communication dans un congrès hal-00618693v1
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Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages

Dominique Bergogne , Asif Hammoud , Dominique Tournier , Cyril Buttay , Youness Amieh et al.

EPE, Sep 2009, Barcelone, France. pp.1--8

Communication dans un congrès hal-00446059v1
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State of the art of High Temperature Power Electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.

Microtherm, Jun 2009, Lodz, Poland. pp.8-17

Communication dans un congrès hal-00413349v1

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua et al.

ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩

Communication dans un congrès hal-00391369v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard et al.

CSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩

Communication dans un congrès hal-00391376v1

SiC JFET for high temperature power switches

Dominique Bergogne , Dominique Tournier , Rami Mousa , Mohsen Shafiee Khoor , Dominique Planson et al.

5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4

Communication dans un congrès hal-00373058v1

VHDL-AMS model of IGBT for electro-thermal simulation

Their Ibrahim , Bruno Allard , Hervé Morel , Sabrine M'Rad

ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417461⟩

Communication dans un congrès hal-00369426v1

High temperature characterization of SiC-JFET and modelling

Rami Mousa , Dominique Planson , Hervé Morel , Christophe Raynaud

ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417501⟩

Communication dans un congrès hal-00369458v1
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Towards an Airborne High Temperature SiC Inverter

Dominique Bergogne , Herve Morel , Dominique Planson , Dominique Tournier , Pascal Bevilacqua et al.

2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, Rhodes, France. pp.3178-3183, ⟨10.1109/PESC.2008.4592442⟩

Communication dans un congrès hal-00467659v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel et al.

13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩

Communication dans un congrès hal-00373016v1

Electrical characterization of 5kV SiC bipolar diodes in switching transient regime

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Sami Ghedira et al.

ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩

Communication dans un congrès hal-00369457v1

Current limiting with SiC JFET structures

Dominique Tournier , Dominique Bergogne , Asif Hamoud , Dominique Planson , Rami Mousa et al.

5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5

Communication dans un congrès hal-00373046v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson et al.

5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2

Communication dans un congrès hal-00372982v1

Modeling and high temperature characterization of SiC-JFET

Rami Mousa , Dominique Planson , Hervé Morel , Bruno Allard , Christophe Raynaud

IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩

Communication dans un congrès hal-00369420v1
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Composant de protection série en SiC 450A de forte densité de puissance

D. Tournier , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Pierre Brosselard et al.

12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France

Communication dans un congrès hal-04624757v1
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P

M Soueidan , Mihai Lazar , D. Tournier , Dominique Planson , Christophe Raynaud et al.

4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France

Communication dans un congrès hal-04606381v1
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Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications

Michel Mermet-Guyennet , Hervé Morel , Dominique Planson , Henri Schneider , Jocelyn Achard

12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France

Communication dans un congrès hal-04606571v1
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New Applications in Power Electronics Based on SiC Power Devices

Hervé Morel , Dominique Bergogne , Dominique Planson , Bruno Allard , Régis Meuret

ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩

Communication dans un congrès hal-02958610v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.

ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩

Communication dans un congrès hal-02958620v1
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Onduleur à JFET sans diode de roue libre externe

Dominique Bergogne , Pierre Lefranc , D. Tournier , Pascal Bevilacqua , Dominique Planson et al.

11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France

Communication dans un congrès hal-04618123v1
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High temperature operating converter

Dominique Bergogne , Pascal Bevilacqua , Dominique Planson , Hervé Morel

4th CIPS, Jun 2006, Naples, Italy. pp.201-204

Communication dans un congrès hal-00413394v1

Les enjeux de la haute température

Christian Martin , Hervé Morel , Dominique Bergogne , Bruno Allard

11ème EPF, Jul 2006, Grenoble, France

Communication dans un congrès hal-00412423v1

Analytic thermal modelling of power electronic components: The Diffusive Representation

Sabrine M'Rad , Bruno Allard , Anis Ammous , Nouri Massmoudi , Hervé Morel

4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.)

Communication dans un congrès hal-00413392v1

Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMS

François Pêcheux , Bruno Allard , Christophe Lallement , Alain Vachoux , Hervé Morel

ICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155

Communication dans un congrès hal-01486590v1

300 °C operating junction temperature inverter leg investigations

Dominique Bergogne , Pascal Bevilacqua , Sabrine M'Rad , Dominique Planson , Hervé Morel et al.

EPE, Sep 2005, Dresden, Germany

Communication dans un congrès hal-00413402v1
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Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions

Cyril Buttay , Olivier Brevet , Bruno Allard , Dominique Bergogne , Hervé Morel

EPE, Sep 2005, Dresden, Germany. ⟨10.1109/EPE.2005.219271⟩

Communication dans un congrès hal-00138894v1
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Bond Graph Modeling of Current Diffusion in Magnetic Cores

Hervé Morel , Bruno Allard , Sabrine M'Rad , Cyril Buttay , Kaiçar Ammous et al.

ICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91

Communication dans un congrès hal-00412621v1

Fast over-current protection of high power IGBT modules

Pierre Lefranc , Dominique Bergogne , Hervé Morel , Bruno Allard , Jean-François Roche

EPE, Sep 2005, Dresden, Germany

Communication dans un congrès hal-00413400v1

Power converter's optimisation, analysis and design

Hassan Helali , Dominique Bergogne , Hervé Morel , Bruno Allard , Pascal Bevilacqua

EPE, Sep 2005, Dresden, Germany

Communication dans un congrès hal-00413401v1
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Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge

Cyril Buttay , Dominique Bergogne , Hervé Morel , Bruno Allard , René Ehlinger et al.

IEEE PESC, Jun 2003, Accapulco, Mexico. pp.901 - 906, ⟨10.1109/PESC.2003.1218175⟩

Communication dans un congrès hal-00413325v1
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A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge

Cyril Buttay , Dominique Bergogne , Hervé Morel , Bruno Allard , René Ehlinger et al.

EPE, Sep 2003, Toulouse, France. pp.1-10

Communication dans un congrès hal-00413309v1
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components

Dominique Planson , S. Margenat , F. Nallet , Hervé Morel , Marie-Laure Locatelli et al.

3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩

Communication dans un congrès hal-04386919v1