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Hervé Morel

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Hervé MOREL, Born, June 7th, 1959 at Reims, France. **Coordinates:** INSA de Lyon - Laboratoire AMPERE, Bat. Léonard de Vinci 21 av. Jean Capelle 69621 Villeurbanne Cedex <Herve.Morel@insa-lyon.fr> **Degrees:** - 1994, Habilitation to conduct researches (Habilitation à diriger des recherche) delivered by the INSA de Lyon. - 1985, PhD at “Ecole Centrale de Lyon”, "Electrical conduction through grain boundaries in the polysilicon” - 1982, Engineer Degree from “Ecole Centrale de Lyon”, 1982, Ecully, France. **Professional Experience** - Since October2004, **Senior Researcher(DR) at the CNRS** ([http://www.cnrs.fr](http://www.cnrs.fr/)) , AMPERE lab.[1](#sdfootnote1sym), joint unit #5005. - <a name="page-title"></a> Since January 2015, Scientific Director of the Power Conversion Technology Program (timeshare 25 %) at Supergrid Institute (http://www.supergrid-institute.com) - January 2012 – April 2014, **Program Officer** (timeshare 50 %), for PROGELEC program (Sustainable Electricity Production and Management) at the ANR[2](#sdfootnote2sym), *The French National Research Agency.* - From October 1985, Researcher(CR) at the CNRS, CEGELY laboratory, joint unit #5005. (17 years) **Significant performance** **Experience** His research area includes power semiconductor device characterization and modeling, Power Electronic System Design &amp; Integration based on the use of Wide Bandgap Power Semiconductor Devices. The main application areas are the **high efficiency power electronics** (for the More Electric Aircraft applications and embedded systems) and the **high voltage power electronics** (particularly for supergrid applications). Multiphysics modeling of power semiconductor devices and power converters, particularly based on bond graphs. Tools and Methodologies for modeling and simulating power components and power converters (Modeling languages MAST et VHDL-AMS). He is involved in many research programs with industrial partners. Current scientific projectsinclude : wide band gap power electronics for embeddedand stationary applications and high voltage power electronicstransmissionand distribution of electricity. A new contribution, concerns meshed DC microgrids for Tertiary Building (C3µ/ANR project). **research activities** - 2011-2013, contribution to writing and starting of the project proposal “SuperGrid”[3](#sdfootnote3sym) in the Framework of the program "Investing for the Future", French Government. - 2013-2017, scientific coordinator for Ampère/INSA in the project GENOME/PREMICE (SiC Power Semiconductor Devices Robustness for aeronautic applications). - November 2007-September 2011, coordinator of the Power Electronic workpackage in the SEFORA program (Smart EMA For Operations in Rough Atmospheres, Aeronautics). - January 2006: coordinator of the “white” program ANR ([http://www.agence-nationale-](http://www.agence-nationale-recherche.fr/)[recherche.fr](http://www.agence-nationale-recherche.fr/)) CO-THT, for the very high temperature (400°C) power electronics. The different actions concern: design of a SiC integrated-circuit for driving SiC-JFET power devices, high temperature packaging and passivation, high temperature capacitors, inductors and transformers. - January 2003: leader of the French Working Group #104 on the “modeling and design of integrated power systems” - January 2003-2007: leader of the team, “integrated power system” at the CEGELY laboratory. (10 researchers, assistant-professors and professors + 15 PhD students). - 1992-1995: coordinator of the “design” French-group in the European Program Prochip-PROMETHEUS. - 1988-1992: developing PACTE simulator based on bond graph technique. **management activities** - January 2006-2011: head manager of the French Network of the CNRS, SEEDS[4](#sdfootnote4sym), in Electrical Engineering. SEEDS includes about 400 researchers, assistant-professors and professors. - January 2004, January 2006: manager of the French Network of the CNRS, ISP3D at the CNRS, #2084 (3D power system integration). ISP3D includes about 40 researchers, assistant-professors and professors. - January 2003: manager of the CEGELY laboratory at the INSA-Lyon. (14 researchers, assistant-professors and professors + 3 post-docs + 16 PhD students). - December 2002- December 2005: Member of the Scientific Council of the CNRS department of Communication and Information Science and Technology. - 2009-2011, Elected Member of the INSA Lyon Scientific Council. **Lectures** current - From 2014, HVDC, 4GE, Departement of electrical engineering, INSA Lyon and Univ. Lyon 1 (12 h/year). - From 2003 : Tutorial « Integration of Power Electronic Systems » PhD student training, Lyon, (2 h/year). - From 2014 : Tutorial « HVDC : Whyenergy transmission in direct current ? » PhD student training, Lyon, (2 h/year). past - 2008-2010: In charge of the Power Engineering Lecture - Master at INSA Lyon. - 1999-2006: In charge of Electricity lectures at the ITECH engineer school ([http://www.itech.fr](http://www.itech.fr/)) . - 1995-2015: In charge of lectures « modeling and numerical simulation of analog systems » at the master of electrical engineering, Lyon. **Expertises** - 2009-2011 expert for the European Commission in the framework of Clean-Sky (aeronautics, JTI) - 2009-2011 member of a scientific examination committee for the DGA - From 2011- member of the scientific council of the OMNT. - From 2012 – external reviewer for Clean-Sly/SGO - From 2003 – referee in IEEE Trans. On Power Electronics and some others journals and conferences. - Member of some scientific council of international conferences : SETIT, CISP, CoSyS-DC, MGE **Memberships** IEEE senior member, SEE senior member. **Scientific Tracking records** - 107 publications in international journals, 150 publications in international conferences, 37 PhD directions, 32 times in a PhD board of examiners (25 times as a referee). - Senior Member [IEEE](http://www.ieee.org/), Senior Member [SEE](http://web2.see.asso.fr/), - <a name="result_box"></a> Scientific Excellence Premium (Prime d'Excellence Scientifique) from the CNRS, [PES](http://www.dgdr.cnrs.fr/drh/carriere/cherch/pes.htm), for 2011-2014 period. - Citations: [http://scholar.google.fr/citations?user=oRloFcUAAAAJ&amp;hl=en](http://scholar.google.fr/citations?user=oRloFcUAAAAJ&hl=en) - « Special Award » , SAFRAN Power Electronic Center, SPEC’2009 « More Electric Aircraft » 18 - 19 november 2009 at Evry Genocentre. - Medal GENELEC 2010, Concordat GENELEC organized bythe Defense Department, 27 jan. 2011. **Exploitation &amp; Dissemination** PACTE is a multiphysic simulator base on the bond graph methodology. It development has started in 1988 in the framework of the European project PROMETEUS/PROCHIP. PACTE was appliedby the CNRS at the APP a French registration program agency, on August 31, 2006, thenon December 3, 2012. PACTE is diffused on CECILL Open Source License. [1](#sdfootnote1anc)<http://www.ampere-lab.fr/?lang=en> [2](#sdfootnote2anc)<http://www.agence-nationale-recherche.fr/en/> [3](#sdfootnote3anc)[http://competitivite.gouv.fr/documents/commun/Politique\_des\_poles/Le\_grand\_emprunt/IEED/Supergrid.pdf](http://competitivite.gouv.fr/documents/commun/Politique_des_poles/Le_grand_emprunt/IEED/Supergrid.pdf) (In French language).

Publications

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First results on 1.2 kV SiC MOSFET body diode robustness tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles
Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩
Journal articles hal-04282544v1
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Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

O. Aviñó-Salvadó , Cyril Buttay , F. Bonet , C. Raynaud , P. Bevilacqua
IEEE Transactions on Industrial Electronics, inPress, ⟨10.1109/TIE.2023.3281705⟩
Journal articles hal-04147050v1
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Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions

Joao Oliveira , Pascal Frey , Hervé Morel , Jean-Michel Reynes , Jérémie Burky
Microelectronics Reliability, 2023, 148, pp.115166. ⟨10.1016/j.microrel.2023.115166⟩
Journal articles hal-04316701v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung
Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩
Journal articles hal-04276812v1
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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson
Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩
Journal articles hal-04199489v1
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Robust Regulation of a Power Flow Controller via Nonlinear Integral Action

Tanguy Simon , Mattia Giaccagli , Jean-François Trégouët , Daniele Astolfi , Vincent Andrieu
IEEE Transactions on Control Systems Technology, 2023, 31 (4), pp.1636 - 1648. ⟨10.1109/TCST.2023.3236474⟩
Journal articles hal-03920401v1
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Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Tamiris Grossl Bade , Hassan Hamad , Adrien Lambert , Hervé Morel , Dominique Planson
Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩
Journal articles hal-04121028v1
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Robust Nonlinear Control of a Power Flow Controller for Meshed DC Grids

Tanguy Simon , Jean-François Trégouët , Xuefang Lin-Shi , Hervé Morel
Control Engineering Practice, 2022, 131, ⟨10.1016/j.conengprac.2022.105389⟩
Journal articles hal-03860875v1
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Capacitance temperature dependence analysis of GaN-on-Si power transistors

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Matthew Charles , Marie-Anne Jaud
Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩
Journal articles cea-03874112v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Journal articles hal-03826217v1
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Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Ali Ammar , Luong Viêt Phung , Dominique Planson , Hervé Morel , Camille Sonneville
Materials Science Forum, 2022, 1062, pp.613-618. ⟨10.4028/p-vms03o⟩
Journal articles hal-03703994v1
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Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Besar Asllani , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Luong Viet Phung
Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩
Journal articles hal-02931290v1
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New Definition of Critical Energy for SiC MOSFET Robustness under Short- Circuit Operations: the Repetitive Critical Energy

C. Chen , Tien-Anh A Nguyen , D Labrousse , S Lefebvre , Cyril Buttay
Microelectronics Reliability, 2020, 114, pp.113839. ⟨10.1016/j.microrel.2020.113839⟩
Journal articles hal-02968998v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , Abderrahime Zaoui , Gregory Grosset , Dominique Planson
Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩
Journal articles hal-02060228v1
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10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization

Besar Asllani , Hervé Morel , Luong Viêt Phung , Dominique Planson
Energies, 2019, ⟨10.3390/en12234566⟩
Journal articles hal-02398585v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , Alberto Castellazzi , Dominique Planson , Hervé Morel
Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩
Journal articles hal-02060341v1
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Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature

Oriol Aviño Salvado , Besar Asllani , Cyril Buttay , Christophe Raynaud , Hervé Morel
IEEE Transactions on Electron Devices, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩
Journal articles hal-02418097v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , Jean-Baptiste Fonder , Beverley Choucoutou
Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩
Journal articles hal-02060334v1
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Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

Layachi Boussouar , Hervé Morel , Bruno Allard , Cyril Buttay
International Journal of Power Electronics, 2019, 10 (3), pp.187. ⟨10.1504/ijpelec.2019.099337⟩
Journal articles hal-02121811v1
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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Besar Asllani , Asad Fayyaz , Alberto Castellazzi , Hervé Morel , Dominique Planson
Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩
Journal articles hal-01889461v1
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SiC MOSFETs robustness for diode-less applications

Oriol Aviño Salvado , C. Cheng , Cyril Buttay , Hervé Morel , D Labrousse
EPE Journal - European Power Electronics and Drives, 2018, pp.1 - 8. ⟨10.1080/09398368.2018.1456836⟩
Journal articles hal-01844980v1
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Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Oriol Aviño Salvado , Hervé Morel , Cyril Buttay , Denis Labrousse , Stéphane Lefebvre
Microelectronics Reliability, 2018, 88-90, pp.636-640. ⟨10.1016/j.microrel.2018.06.033⟩
Journal articles hal-01895791v1
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Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling

Wissam Sabbah , Faical Arabi , Oriol Aviño Salvado , Cyril Buttay , Loic Théolier
Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.091⟩
Journal articles hal-01562549v1
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A Novel Approach to Accurately Determine the tq Parameter of Thyristors

Hatem Garrab , Atef Jedidi , Hervé Morel , Kamel Besbes
IEEE Transactions on Industrial Electronics, 2017, 64 (1), pp.206 - 216. ⟨10.1109/tie.2016.2609381⟩
Journal articles hal-01617496v1

A spiral planar inductor: An experimentally verified physically based model for frequency and time domains

Aymen Ammouri , Tarek Ben Salah , Hervé Morel
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2017, pp.e2272. ⟨10.1002/jnm.2272⟩
Journal articles hal-01626146v1
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SiC power devices packaging with a short-circuit failure mode capability

Ilyas Dchar , Cyril Buttay , Hervé Morel
Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.07.003⟩
Journal articles hal-01562547v1
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High temperature ageing of microelectronics assemblies with SAC solder joints

Wissam Sabbah , Pierre Bondue , Oriol Aviño Salvado , Cyril Buttay , Héìène Frémont
Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.065⟩
Journal articles hal-01564755v1
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Evaluation of printed-circuit boards materials for high temperature operation

Oriol Aviño Salvado , Wissam Sabbah , Cyril Buttay , Hervé Morel , Pascal Bevilacqua
Journal of Microelectronics and Electronic Packaging, 2017, 14 (4), ⟨10.4071/imaps.516313⟩
Journal articles hal-01674483v1
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Electrical, thermal and mechanical properties of poly-etherimide epoxy-diamine blend

Nour Halawani , Jean-Louis Augé , Hervé Morel , O. Gain , S. Pruvost
Composites Part B: Engineering, 2017, -, 110 (-), pp.530 - 541. ⟨10.1016/j.compositesb.2016.11.022⟩
Journal articles hal-01626136v1

A Control Strategy of DC Building Microgrid Connected to the Neighborhood and AC Power Network

Thi Thuong Huyen Ma , Hamed Yahoui , Hoang Giang Vu , Nicolas Siauve , Hervé Morel
Buildings, 2017, 7 (2), ⟨10.3390/buildings7020042⟩
Journal articles hal-01626141v1

The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case

Atef Jedidi , Hatem Garrab , Hervé Morel , Kamel Besbes
Journal of Power Electronics, 2017, 17 (2), pp.561 - 569. ⟨10.6113/jpe.2017.17.2.561⟩
Journal articles hal-01626139v1
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Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung
Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩
Journal articles hal-01391838v1
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Avalanche robustness of SiC Schottky diode

Ilyas Dchar , Cyril Buttay , Hervé Morel
Microelectronics Reliability, 2016, ⟨10.1016/j.microrel.2016.07.086⟩
Journal articles hal-01373039v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole
Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342
Journal articles hal-01626119v1

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

Sameh Mtimet , Walid Ben Salah , Salah Tarek Ben , Ferid Kourda , Hervé Morel
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (3), pp. 287-300. ⟨10.1002/jnm.2005⟩
Journal articles hal-01388318v1
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Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickael Petit , Cyril Buttay
Microelectronics Reliability, 2015, pp.6. ⟨10.1016/j.microrel.2015.06.097⟩
Journal articles hal-01198584v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
Journal articles hal-01387983v1
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A Novel approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems

Atef Jedidi , Hatem Garrab , Hervé Morel , Kamel Besbes
IEEE Transactions on Industrial Electronics, 2015, 62 (4), ⟨10.1109/TIE.2014.2356440⟩
Journal articles hal-01388299v1

Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

Hervé Morel , Aymen Ammouri , Walid Ben Salah , Sofiane Khachroumi , Tarek Ben Salah
European Physical Journal: Applied Physics, 2014, 66 (2), pp.20901. ⟨10.1051/epjap/2014130430⟩
Journal articles hal-01006044v1

Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET

Sami Ghedira , Cyril Buttay , Hervé Morel , Kamel Besbes
European Physical Journal: Applied Physics, 2014, 66 (2), pp.20103. ⟨10.1051/epjap/2014130533⟩
Journal articles hal-01005929v1
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LVDC: An Efficient Energy Solution for On-Grid Photovoltaic Applications

Anis Ammous , Hervé Morel
Smart Grid and Renewable Energy, 2014, 5 (4), pp.63-76. ⟨10.4236/sgre.2014.54007⟩
Journal articles hal-01005973v1
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Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters

Rémi Robutel , Christian Martin , Cyril Buttay , Hervé Morel , Paulo Mattavelli
IEEE Transactions on Power Electronics, 2013, PP (99), pp.1. ⟨10.1109/TPEL.2013.2279772⟩
Journal articles hal-00874455v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne
Materials Science Forum, 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩
Journal articles hal-00799884v1
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Thermal Stability of Silicon Carbide Power JFETs

Cyril Buttay , Rémy Ouaida , Hervé Morel , Dominique Bergogne , Christophe Raynaud
IEEE Transactions on Electron Devices, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩
Journal articles hal-00881667v1
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Die attach using silver sintering. Practical implementation and analysis

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi
European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩
Journal articles hal-00874465v1

Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages

Dominique Bergogne , Cyril Buttay , Rémi Robutel , Fabien Dubois , Rémy Ouaida
EPE Journal - European Power Electronics and Drives, 2013, 23 (3), pp.5--12
Journal articles hal-00997389v1

Nonlinear average modeling of multilevel converters

B. Omri , Kaiçar Ammous , Anis Ammous , Hervé Morel
International Review on Modelling and Simulations, 2012, 5 (1), pp.154-163
Journal articles hal-00747412v1
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Full densification of Molybdenum powders using Spark Plasma Sintering

Bassem Mouawad , Maher Soueidan , D. Fabregue , Cyril Buttay , Vincent Bley
Metallurgical and Materials Transactions A, 2012, pp.1-8. ⟨10.1007/s11661-012-1144-2⟩
Journal articles hal-00707782v1

Multi-Objective Optimization of Power Converter Sizing Based on Genetic Algorithms: Application to Photovoltaic Systems

Hanen Mejbri , Hervé Morel , Kaiçar Ammous , Anis Ammous
International Review on Modelling and Simulations, 2012, 5 (2), pp. 826-839
Journal articles hal-00854436v1

Optimal design of power converter using multi-objective genetic algorithm

H. Mejbri , Kaiçar Ammous , Hervé Morel , Anis Ammous
International Review on Modelling and Simulations, 2012, 5 (2), pp.793-802
Journal articles hal-00747409v1
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Thermal stability of silicon-carbide power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli
IEEE Transactions on Electron Devices, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩
Journal articles hal-00672440v1
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Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding

Bassem Mouawad , Maher Soueidan , D. Fabregue , Cyril Buttay , Bruno Allard
IEEE Transactions on Components and Packaging Technologies, 2012, 2 (4), pp.553 - 560. ⟨10.1109/TCPMT.2012.2186453⟩
Journal articles hal-00672244v1

Normally-On SIC JFETs: Active Protections

Fabien Dubois , Dominique Bergogne , Cyril Buttay , Hervé Morel , Régis Meuret
EPE Journal - European Power Electronics and Drives, 2012, 22 (3), pp.6-13
Journal articles hal-00821756v1

Design of a High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Rémi Robutel , Christian Martin , Hervé Morel , Cyril Buttay , Nicolas Gazel
Journal of Microelectronics and Electronic Packaging, 2011, 8 (1), pp.23-30
Journal articles hal-00729066v1

Modelling, analysis, and experimental study of SiC JFET body diode

Tarek Ben Salah , Y. Lahbib , Hervé Morel
European Physical Journal: Applied Physics, 2011, 53 (1), pp.Article Number: 10301. ⟨10.1051/epjap/2010100172⟩
Journal articles hal-00579353v1

Characterization and VHDL-AMS modeling of SiC-JFET transistor

Rami Mousa , Dominique Planson , Hervé Morel
European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩
Journal articles hal-00747438v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩
Journal articles hal-00799902v1

Inverse Models of Voltage and Current Probes

Kaiçar Ammous , Hervé Morel , Anis Ammous
IEEE Transactions on Instrumentation and Measurement, 2011, 60 (12), pp.3898 - 3906. ⟨10.1109/TIM.2011.2144710⟩
Journal articles hal-00629210v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua
Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩
Journal articles hal-00597432v1

SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation

Tarek Ben Salah , Sameh Mtimet , Hervé Morel
Sensor letters, 2011, 9 (6), pp.2347-2350. ⟨10.1166/sl.2011.1762⟩
Journal articles hal-00747433v1

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Tarek Ben Salah , Sofiane Khachroumi , Hervé Morel
Sensors, 2010, 10 (1), pp.388-399. ⟨10.3390/s100100388⟩
Journal articles hal-00476196v1

Toward SiC-JFETs modelling with temperature dependence

Tarek Ben Salah , Hervé Morel , Sameh Mtimet
European Physical Journal: Applied Physics, 2010, 52 (2), pp.Article number 20301. ⟨10.1051/epjap/2010139⟩
Journal articles hal-00539603v1
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Analysis of Power Switching Losses Accounting Probe Modeling

Kaiçar Ammous , Hervé Morel , Anis Ammous
IEEE Transactions on Instrumentation and Measurement, 2010, 59 (12), pp.3218 - 3226. ⟨10.1109/TIM.2010.2047302⟩
Journal articles hal-00539180v1
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Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson
Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩
Journal articles hal-02186368v1

Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor

Olivier Berry , Youness Hamieh , Stéphane Rael , Farid Meibody-Tabar , Sébastien Vieillard
Materials Science Forum, 2010, 645-6648, pp.957-960. ⟨10.4028/www.scientific.net/MSF.645-64⟩
Journal articles hal-00539615v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Journal articles hal-04368124v1

SiC-VJFETs power switching devices: an improved model and parameter optimization technique

Tarek Ben Salah , Y. Lahbib , Hervé Morel
European Physical Journal: Applied Physics, 2009, 48 (3), pp.Article Number: 30305. ⟨10.1051/epjap/2009187⟩
Journal articles hal-00476199v1
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Jawad Ul Hassan , Pascal Bevilacqua
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Journal articles hal-04368136v1

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Pierre Lefranc , Dominique Planson , Hervé Morel , Dominique Bergogne
Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩
Journal articles hal-00476201v1

Reduced-Order Thermal Behavioral Model Based on Diffusive Representation

Bruno Allard , Xavier Jordà , Pierre Bidan , Axel Rumeau , Hervé Morel
IEEE Transactions on Power Electronics, 2009, 24 (12), pp.2833-2846. ⟨10.1109/TPEL.2009.2028231⟩
Journal articles hal-00476198v1

Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

Tarek Ben Salah , Mahbouba Amairi , Zina Sassi , Hervé Morel
Sensor letters, 2009, 7 (5), pp.707-711. ⟨10.1166/sl.2009.1135⟩
Journal articles hal-00476197v1

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne
Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Journal articles hal-04452237v1
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On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior

Bruno Allard , Hatem Garrab , Tarek Ben Salah , Hervé Morel , Kaiçar Ammous
IEEE Transactions on Power Electronics, 2008, 23 (1), pp.491-494. ⟨10.1109/TPEL.2007.911882⟩
Journal articles hal-00313945v1
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Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes

Tarek Ben Salah , Cyril Buttay , Bruno Allard , Hervé Morel , Sami Ghedira
IEEE Transactions on Power Electronics, 2007, 22 (1), pp.13-20. ⟨10.1109/TPEL.2006.886648⟩
Journal articles hal-00135198v1

Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes

S. Abis , Kaiçar Ammous , Hervé Morel , Anis Ammous
International Review of Electrical Engineering, 2007, 4 (2), pp.544-556
Journal articles hal-00357024v1

A novel approach to extract accurate design parameters of PiN diode

Tarek Ben Salah , Sami Ghedira , Hatem Garrab , Hervé Morel , Damien Risaletto
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2007, 20 (6), pp.283-297. ⟨10.1002/jnm.646⟩
Journal articles hal-00358834v1

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

Tarek Ben Salah , Hatem Garrab , Sami Ghedira , Bruno Allard , Damien Risaletto
Superlattices and Microstructures, 2006, 40 (4-6), pp.580-587
Journal articles hal-00140085v1
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Model Requirements for Simulation of Low-Voltage MOSFET in Automotive Applications

Cyril Buttay , Hervé Morel , Bruno Allard , Pierre Lefranc , Olivier Brevet
IEEE Transactions on Power Electronics, 2006, 21 (3), pp.613-624. ⟨10.1109/TPEL.2006.872383⟩
Journal articles hal-00138878v1
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Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩
Journal articles hal-01702019v1

Electro-thermal simulation including a temperature distribution inside power semiconductor devices

Bruno Allard , Hatem Garrab , Hervé Morel
International Journal of Electronics, 2005, 92 (4), pp.189-213
Journal articles hal-00140854v1
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On the extraction of PiN diode design parameters for validation of integrated power converter design

Hatem Garrab , Bruno Allard , Hervé Morel , Kaiçar Ammous , Sami Ghedira
IEEE Transactions on Power Electronics, 2005, 20 (3), pp.660-670. ⟨10.1109/TPEL.2005.846544⟩
Journal articles hal-00140858v1
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Avalanche Behavior of Low-Voltage Power MOSFETs

Cyril Buttay , Tarek Ben Salah , Dominique Bergogne , Bruno Allard , Hervé Morel
IEEE Power Electronics Letters, 2004, 2 (3), pp.104-107. ⟨10.1109/LPEL.2004.839638⟩
Journal articles hal-00138863v1

Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation

Hatem Garrab , Bruno Allard , Hervé Morel , Sami Ghedira , Kamel Besbes
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2004, 17 (6): 539-560 NOV-DEC 2004 (6), pp.539-560
Journal articles hal-00140093v1

Developing an advanced PWM-switch model including semiconductor device non-linearities

Anis Ammous , M. Ayedi , Y. Ounajjar , Fayçal Sellami , Kaiçar Ammous
European Physical Journal: Applied Physics, 2003, 21 (2), pp.107-120
Journal articles hal-00140101v1

Developing an equivalent thermal model for discrete semiconductor packages

Anis Ammous , Fayçal Sellami , Kaiçar Ammous , Hervé Morel , Bruno Allard
International Journal of Thermal Sciences, 2003, 42 (5), pp.533-539
Journal articles hal-00140112v1

Non-linear control design for a boost converter using bond graphs

Xuefang Lin-Shi , Jean-Marie Rétif , Bruno Allard , Hervé Morel
Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering, 2002, 216 (I1), pp.1-11
Journal articles hal-00140094v1

Modèle moyen de l'onduleur triphasé de tension pour la conception de lois de commande

Bruno Allard , Hervé Morel , Xuefang Lin-Shi , Jean-Marie Rétif
European Journal of Electrical Engineering, 2002, 5 (1), pp.183-201. ⟨10.3166/rige.5.183-201⟩
Journal articles hal-00403393v1
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On the validity of the standard SPICE model of the diode for simulation in power electronics

Nouri Massmoudi , Djébé M'Baïri , Bruno Allard , Hervé Morel
IEEE Transactions on Industrial Electronics, 2001, 48 (4), pp.864-867
Journal articles hal-00140095v1
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Electrothermal modeling of IGBT's: Application to short-circuit conditions

Anis Ammous , Kaiçar Ammous , Hervé Morel , Bruno Allard , Dominique Bergogne
IEEE Transactions on Power Electronics, 2000, 15 (4), pp.778-790
Journal articles hal-00140098v1
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Choosing a thermal model for electrothermal simulation of power semiconductor devices

Anis Ammous , Sami Ghedira , Bruno Allard , Hervé Morel , Denise Renault
IEEE Transactions on Power Electronics, 1999, 14 (2), pp.300-307
Journal articles hal-00140099v1
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Transient temperature measurements and modeling of IGBT's under short circuit

Anis Ammous , Bruno Allard , Hervé Morel
IEEE Transactions on Power Electronics, 1998, 13 (1), pp.12-25
Journal articles hal-00140100v1
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Les composants de puissance : état de l'art, les évolutions

Jean-Pierre Chante , Bruno Allard , Dominique Bergogne , Francis Calmon , René Elhinger
Revue Internationale de Génie Electrique, RIGE, 1998
Journal articles hal-02117240v1
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MODELING OF A NONLINEAR CONDUCTIVE MAGNETIC-CIRCUIT .2. BOND GRAPH FORMULATION

H. Fraisse , Jean-Pierre Masson , F. Marthouret , Hervé Morel
IEEE Transactions on Magnetics, 1995, 31 (6), pp.4068-4070
Journal articles hal-00140102v1
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STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH

Hervé Morel , S. H. Gamal , Jean-Pierre Chante
IEEE Transactions on Power Electronics, 1994, 9 (1), pp.112-120
Journal articles hal-00140103v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , Régis Meuret
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France
Conference papers hal-04240602v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Conference papers hal-04147862v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Conference papers hal-04203163v1
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Application of the Double Source Switching Test to GaN HEMTs

Tamiris Grossl Bade , Maroun Alam , Hervé Morel , Dominique Planson
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩
Conference papers hal-04225311v1
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Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics

Hervé Morel , Maroun Alam , Pascal Bevilacqua , D. Tournier , Dominique Planson
Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France
Conference papers hal-04224402v1
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New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices

Joao Oliveira , Bernardo Cougo , Fabio Coccetti , Stephane Azzopardi , Hervé Morel
European Conference on Power Electronics and Applications, Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264294⟩
Conference papers hal-04316671v1
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V

Adrien Lambert , Hervé Morel , D. Tournier , Dominique Planson , Luong Viêt Phung
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Conference papers hal-04150168v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau
20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Conference papers hal-04221605v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Conference papers hal-04222211v1

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Conference papers hal-03990840v1
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Maroun Alam , Hervé Morel , Luong Viêt Phung , Dominique Planson , A. Yvon
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩
Conference papers hal-03887865v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
Conference papers hal-03856578v1
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Stéphane Becu , Matthew Charles
SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan
Conference papers cea-03875079v1
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Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC Microgrids

Xuefang Lin-Shi , Tanguy Simon , Jean-François Trégouët , Hervé Morel
PEAS, Nov 2021, Shanghai, China. ⟨10.1109/PEAS53589.2021.9628872⟩
Conference papers hal-03375502v1
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications

Joao Oliveira , Ali Alhoussen , Florent Loiselay , Hervé Morel , Dominique Planson
EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩
Conference papers hal-03260519v1
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Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design

Tanguy Simon , Mattia Giaccagli , Jean-François Trégouët , Daniele Astolfi , Vincent Andrieu
CDC, Dec 2021, Austin, United States. ⟨10.1109/CDC45484.2021.9682901⟩
Conference papers hal-03375498v1
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Modelling and Control of a Power Flow Controller for DC Microgrids

Tanguy Simon , Jean-François Trégouët , Hervé Morel , Xuefang Lin-Shi
EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570493⟩
Conference papers hal-03360965v1
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Joao Oliveira , Florent Loiselay , Hervé Morel , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩
Conference papers hal-02945913v1
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Analysis of Parasitic Elements in Power Modules Based on GaN Components

Joao Oliveira , Hervé Morel , Dominique Planson , Florent Loiselay
PCIM Europe 2020, Jul 2020, Nuremberg, Germany
Conference papers hal-02945892v1
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Besar Asllani , Hervé Morel , Pascal Bevilacqua , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩
Conference papers hal-02945919v1
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Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Ilyas Dchar , Cyril Buttay , Hervé Morel
APEC, Mar 2019, Anaheim, Californie, United States. ⟨10.1109/APEC.2019.8722126⟩
Conference papers hal-02076181v1
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Benefits of GaN transistors and embedding in PCB laminates

Cyril Buttay , Christian Martin , Charles Joubert , Hervé Morel , Bruno Allard
SIA Power Train & Electronics, Jun 2019, Paris, France
Conference papers hal-02291496v1
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Static characteristics of 5 kV SiC BJTs and Darlington’s

Besar Asllani , Dominique Planson , Hervé Morel , T Lagier
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan
Conference papers hal-02428513v1
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V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Besar Asllani , Alberto Castellazzi , Oriol Aviño Salvado , Asad Fayyaz , Hervé Morel
IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩
Conference papers hal-02099781v1
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A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices

Thilini Wickramasinghe , Bruno Allard , Cyril Buttay , Charles Joubert , Christian Martin
45th IEEE IECON, Oct 2019, Lisbonne, Portugal. ⟨10.1109/IECON.2019.8927490⟩
Conference papers hal-02405883v1
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An investigation of current distribution over four GaN HEMTs in parallel configurations

Thilini Wickramasinghe , Cyril Buttay , Christian Martin , Hervé Morel , Pascal Bevilacqua
The 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Oct 2019, Raleigh, United States. ⟨10.1109/WiPDA46397.2019.8998816⟩
Conference papers hal-02405882v1
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Microréseaux DC : avantages des réseaux maillés

Hervé Morel , Loïc Michel , Guy Clerc , Pascal Bevilacqua , Mohamed Barara
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Conference papers hal-02134229v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , A Castellazzi , Dominique Planson , Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04
Conference papers hal-02428531v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , J B Fonder , B Choucoutou
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Conference papers hal-01985994v1
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Besar Asllani , Hervé Morel , Dominique Planson , Asad Fayyaz , Alberto Castellazzi
ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩
Conference papers hal-01984359v1
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Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin , Mehdi Kanoun , Christophe Raynaud , Hervé Morel
2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩
Conference papers hal-01942728v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , A. Zaoui , G Grosset , Dominique Planson
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5
Conference papers hal-02428523v1
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Repetitive short-circuit measurement on SiC MOSFET

Quentin Molin , Christophe Raynaud , Mehdi Kanoun , Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Conference papers hal-01980834v1

Étude de la robustesse de l’oxyde de grille pour des applications aéronautiques

Oriol Aviño Salvado , Hervé Morel , Cyril Buttay
JCGE, May 2017, Arras, France. pp.146345
Conference papers hal-01534712v1
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Improved Layout of Inverter for EMC Analysis

Ousseynou Yade , Christian Martin , Christian Vollaire , Arnaud Bréard , Marwan Ali
More Electrical Aircraft (MEA), Feb 2017, Bordeaux, France
Conference papers hal-01715021v1
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Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors

Hugo Reynes , Cyril Buttay , Hervé Morel
WiPDA, Oct 2017, Albuquerque, United States. ⟨10.1109/WiPDA.2017.8170581⟩
Conference papers hal-01645029v1

An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module

Malorie Hologne , Pascal Bevilacqua , Bruno Allard , Guy Clerc , Hervé Morel
IEMDC, May 2017, Miami, FL, United States. pp.MO263, ⟨10.1109/IEMDC.2017.8002028⟩
Conference papers hal-01532058v1

Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-grids

Mohamed Barara , Hervé Morel , Guy Clerc
International conference on components and systems for DC grids, Mar 2017, Grenoble, France
Conference papers hal-01793569v1

Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker

Thi Thuong Huyen Ma , Hamed Yahoui , Fedia Baccar El Boubkari , Hervé Morel , Hoang-Giang Vu
COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique
Conference papers hal-01639199v1
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Robustness of SiC MOSFET under avalanche conditions

Ilyas Dchar , Marion Zolkos , Cyril Buttay , Hervé Morel
APEC, Mar 2017, Tampa, FL, United States. pp.2263-2268, ⟨10.1109/APEC.2017.7931015⟩
Conference papers hal-01535735v1
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Evaluation of printed-circuit boards materials for high temperature operation

Oriol Aviño Salvado , Wissam Sabbah , Cyril Buttay , Hervé Morel , Pascal Bevilacqua
HiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom
Conference papers hal-01565131v1
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State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications

Layal Ghossein , Florent Morel , Hervé Morel , Piotr Dworakowski
PCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD
Conference papers hal-01316570v1
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Analyse de la robustesse des MOSFET SiC pour les applications diode-less

Oriol Aviño Salvado , Cheng Chen , Cyril Buttay , Hervé Morel , Denis Labrousse
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Conference papers hal-01361711v1

High temperature operation of SiC transistors

Cyril Buttay , Marwan Ali , Oriol Aviño Salvado , Hervé Morel , Bruno Allard
Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States
Conference papers hal-01373030v1
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Robustness of SiC MOSFETs in short-circuit mode

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickaël Petit , Cyril Buttay
PCIM Europe 2015, May 2015, Nuremberg, Germany
Conference papers hal-01196528v1

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Conference papers hal-02138529v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil
CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Conference papers hal-01388019v1

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickael Petit , Cyril Buttay
ESREF, Oct 2015, Toulouse, France. pp.1708-1713
Conference papers hal-01700463v1
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Considerations for High Temperature Power Electronics

Bruno Allard , Cyril Buttay , Christian Martin , Hervé Morel
18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia
Conference papers hal-01372146v1
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Power Loss Estimation in SiC Power BJTs

Chen Cheng , Denis Labrousse , Stéphane Lefebvre , Hervé Morel , Cyril Buttay
PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p
Conference papers hal-00997718v1
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Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique

Marc Petit , Seddik Bacha , Xavier Guillaud , Hervé Morel , Dominique Planson
1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France
Conference papers hal-01065154v1
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Estimation des pertes dans les transistors bipolaires SiC

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Cyril Buttay , Hervé Morel
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Conference papers hal-01065220v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Conference papers hal-02133686v1
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Analysis of the SiC VJFET gate punch-through and its dependence with the temperature

Fabien Dubois , Dominique Bergogne , Dominique Tournier , Cyril Buttay , Régis Meuret
EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩
Conference papers hal-00874655v1
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Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes

Xavier Fonteneau , Florent Morel , Cyril Buttay , Hervé Morel , Philippe Lahaye
APEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, ⟨10.1109/APEC.2013.6520668⟩
Conference papers hal-00829353v1
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SiC Vertical JFET Pure Diode-Less Inverter Leg

Rémy Ouaida , Xavier Fonteneau , Fabien Dubois , Dominique Bergogne , Florent Morel
APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩
Conference papers hal-00829343v1
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Report de puce par frittage d'argent - mise en oeuvre et analyse

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)
Conference papers hal-00729156v1

A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs

Fabien Dubois , Stéphane Sorel , Sonia Dhokkar , Régis Meuret , Dominique Bergogne
ECCE, Sep 2012, Raleigh, United States. pp.3581, ⟨10.1109/ECCE.2012.6342486⟩
Conference papers hal-00739021v1
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Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications

Bassem Mouawad , Cyril Buttay , Maher Soueidan , Hervé Morel , Vincent Bley
ISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩
Conference papers hal-00707820v1

High Temperature Ageing of Fe-based Nanocrystalline Ribbons

Christian Martin , Rémi Robutel , Cyril Buttay , Fabien Sixdenier , Pascal Bevilacqua
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Conference papers hal-00760373v1
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3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules

Bassem Mouawad , Cyril Buttay , Maher Soueidan , Hervé Morel , Bruno Allard
7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438
Conference papers hal-00707741v1
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Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC

Xavier Fonteneau , Florent Morel , Hervé Morel , Philippe Lahaye , Didier Léonard
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24)
Conference papers hal-00729345v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Conference papers hal-00759975v2

Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode

Xavier Fonteneau , Florent Morel , Hervé Morel , Philippe Lahaye , Eliana Rondon
ECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩
Conference papers hal-00739006v1

An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

Dominique Bergogne , Fabien Dubois , Christian Martin , Khalil El Falahi , Luong Viet Phung
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Conference papers hal-00760366v1

Temperature dependence of silicon and silicon carbide power devices: An experimental analysis

Mahbouba Amairi , Sameh Mtimet , Tarek Ben Salah , Hervé Morel
MELECON 2012, Mar 2012, Tunis, Tunisia. pp.97 - 101, ⟨10.1109/MELCON.2012.6196389⟩
Conference papers hal-00747425v1

Ultrafast safety system to turn-off normally on SiC JFETs

Fabien Dubois , Dominique Bergogne , Damien Risaletto , Rémi Perrin , Abderrahime Zaoui
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Conference papers hal-00629232v1

Integrated common mode capacitors for SiC JFET inverters

Rémi Robutel , Christian Martin , Hervé Morel , Paulo Mattavelli , Dushan Boroyevitch
APEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩
Conference papers hal-00618665v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Conference papers hal-00661500v1
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Higher temperature power electronics for larger-scale mechatronic integration

Bruno Allard , Cyril Buttay , Dominique Tournier , Rémi Robutel , Jean-François Mogniotte
Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination)
Conference papers hal-00687139v1

Active protections for normally-on SiC JFETs

Fabien Dubois , Damien Risaletto , Dominique Bergogne , Hervé Morel , Cyril Buttay
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Conference papers hal-00629227v1

A multi-physics model of the VJFET with a lateral channel

Hervé Morel , Youness Hamieh , Dominique Tournier , Rémi Robutel , Fabien Dubois
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Conference papers hal-00629220v1
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High-temperature die-attaches for SiC power devices

Amandine Masson , Cyril Buttay , Hervé Morel , Christophe Raynaud , Stanislas Hascoët
EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161
Conference papers hal-00672602v1
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

Cyril Buttay , Amandine Masson , Jianfeng Li , Mark C. Johnson , Mihai Lazar
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Conference papers hal-00672619v1

High-temperature behavior of SiC power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Mihai Lazar , Gabriel Civrac
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Conference papers hal-00629225v1

Thermal Requirements of SiC Power Devices

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli
6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Conference papers hal-00672631v1

Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Rémi Robutel , Christian Martin , Hervé Morel , Cyril Buttay , Dominique Bergogne
HiTEC 2010, May 2010, Albuquerque, United States. pp.000236
Conference papers hal-00485284v1

Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)

Dominique Bergogne , Olivier Berry , Sonia Dhokkar , Youness Hamieh , Farid Meibody-Tabar
13ème EPF, Jun 2010, Saint-Nazaire, France
Conference papers hal-00618715v1

Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance

Damien Risaletto , Dominique Bergogne , Fabien Dubois , Hervé Morel , Cédric Ruby
13ème EPF, Jun 2010, Saint-Nazaire, France
Conference papers hal-00618693v1

Caractérisation des non-linéarités dans les condensateurs céramiques haute température

Rémi Robutel , Christian Martin , Cyril Buttay , Hervé Morel , Régis Meuret
13ème EPF, Jun 2010, Saint-Nazaire, France
Conference papers hal-00618657v1

SIC inverter optimization for high temperature applications

Régis Meuret , Olivier Berry , Fabien Dubois , Youness Hamieh , Stéphane Raël
27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France
Conference papers hal-02937166v1

High Temperature Inverter for Airborne Application

Fabien Dubois , Dominique Bergogne , Damien Risaletto , Rémi Robutel , Hervé Morel
HiTEC 2010, May 2010, Albuquerque, United States. pp.000222
Conference papers hal-00485279v1

Normally-On SiC JFETs in power converters: Gate driver and safe operation

Dominique Bergogne , Damien Risaletto , Fabien Dubois , Asif Hammoud , Hervé Morel
6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD
Conference papers hal-00629214v1
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State of the art of High Temperature Power Electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Conference papers hal-00413349v1
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Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages

Dominique Bergogne , Asif Hammoud , Dominique Tournier , Cyril Buttay , Youness Amieh
EPE, Sep 2009, Barcelone, France. pp.1--8
Conference papers hal-00446059v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Conference papers hal-00372982v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel
13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
Conference papers hal-00373016v1
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Towards an Airborne High Temperature SiC Inverter

Dominique Bergogne , Herve Morel , Dominique Planson , Dominique Tournier , Pascal Bevilacqua
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, Rhodes, France. pp.3178-3183, ⟨10.1109/PESC.2008.4592442⟩
Conference papers hal-00467659v1

SiC JFET for high temperature power switches

Dominique Bergogne , Dominique Tournier , Rami Mousa , Mohsen Shafiee Khoor , Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4
Conference papers hal-00373058v1

Current limiting with SiC JFET structures

Dominique Tournier , Dominique Bergogne , Asif Hamoud , Dominique Planson , Rami Mousa
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5
Conference papers hal-00373046v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard
CSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Conference papers hal-00391376v1

Modeling and high temperature characterization of SiC-JFET

Rami Mousa , Dominique Planson , Hervé Morel , Bruno Allard , Christophe Raynaud
IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩
Conference papers hal-00369420v1

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua
ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Conference papers hal-00391369v1

VHDL-AMS model of IGBT for electro-thermal simulation

Their Ibrahim , Bruno Allard , Hervé Morel , Sabrine M'Rad
ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417461⟩
Conference papers hal-00369426v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Conference papers hal-02958620v1
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New Applications in Power Electronics Based on SiC Power Devices

Hervé Morel , Dominique Bergogne , Dominique Planson , Bruno Allard , Régis Meuret
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩
Conference papers hal-02958610v1

High temperature characterization of SiC-JFET and modelling

Rami Mousa , Dominique Planson , Hervé Morel , Christophe Raynaud
ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417501⟩
Conference papers hal-00369458v1

Electrical characterization of 5kV SiC bipolar diodes in switching transient regime

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Sami Ghedira
ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩
Conference papers hal-00369457v1
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High temperature operating converter

Dominique Bergogne , Pascal Bevilacqua , Dominique Planson , Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. pp.201-204
Conference papers hal-00413394v1

Les enjeux de la haute température

Christian Martin , Hervé Morel , Dominique Bergogne , Bruno Allard
11ème EPF, Jul 2006, Grenoble, France
Conference papers hal-00412423v1

Analytic thermal modelling of power electronic components: The Diffusive Representation

Sabrine M'Rad , Bruno Allard , Anis Ammous , Nouri Massmoudi , Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.)
Conference papers hal-00413392v1

Fast over-current protection of high power IGBT modules

Pierre Lefranc , Dominique Bergogne , Hervé Morel , Bruno Allard , Jean-François Roche
EPE, Sep 2005, Dresden, Germany
Conference papers hal-00413400v1

300 °C operating junction temperature inverter leg investigations

Dominique Bergogne , Pascal Bevilacqua , Sabrine M'Rad , Dominique Planson , Hervé Morel
EPE, Sep 2005, Dresden, Germany
Conference papers hal-00413402v1

Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMS

François Pêcheux , Bruno Allard , Christophe Lallement , Alain Vachoux , Hervé Morel
ICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155
Conference papers hal-01486590v1

Power converter's optimisation, analysis and design

Hassan Helali , Dominique Bergogne , Hervé Morel , Bruno Allard , Pascal Bevilacqua
EPE, Sep 2005, Dresden, Germany
Conference papers hal-00413401v1
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Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions

Cyril Buttay , Olivier Brevet , Bruno Allard , Dominique Bergogne , Hervé Morel
EPE, Sep 2005, Dresden, Germany. ⟨10.1109/EPE.2005.219271⟩
Conference papers hal-00138894v1
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Bond Graph Modeling of Current Diffusion in Magnetic Cores

Hervé Morel , Bruno Allard , Sabrine M'Rad , Cyril Buttay , Kaiçar Ammous
ICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91
Conference papers hal-00412621v1
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Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge

Cyril Buttay , Dominique Bergogne , Hervé Morel , Bruno Allard , René Ehlinger
IEEE PESC, Jun 2003, Accapulco, Mexico. pp.901 - 906, ⟨10.1109/PESC.2003.1218175⟩
Conference papers hal-00413325v1
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A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge

Cyril Buttay , Dominique Bergogne , Hervé Morel , Bruno Allard , René Ehlinger
EPE, Sep 2003, Toulouse, France. pp.1-10
Conference papers hal-00413309v1
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components

Dominique Planson , S. Margenat , F. Nallet , Hervé Morel , Marie-Laure Locatelli
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩
Conference papers hal-04386919v1
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Modélisation et simulation des composants et des systèmes électroniques de puissance

Hervé Morel
Energie électrique. INSA de Lyon, 1994
Habilitation à diriger des recherches tel-00731059v1