Hervé Morel
222
Documents
Présentation
Publications
Publications
|
|
Analysis of Robustness of 650 V GaN HEMT under Repetitive Short-CircuitsESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France
Communication dans un congrès
hal-05323083
v1
|
|
|
Aging of p-GaN gate HEMTs under hard-switching conditionsESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France
Communication dans un congrès
hal-05323081
v1
|
|
|
Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switchingESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France
Communication dans un congrès
hal-05323111
v1
|
|
|
Repetitive Short-circuits on 650 V GaNPCIM Europe 2024, Jun 2024, Nuremberg, Germany
Communication dans un congrès
hal-04626451
v1
|
|
|
Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction TransistorInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128
Communication dans un congrès
hal-04677764
v1
|
Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs13th International Conference on Integrated Power Electronics Systems, CIPS 2024, Mar 2024, Dusseldorf, Germany. pp.Pages 467 - 475
Communication dans un congrès
hal-04974583
v1
|
|
|
|
Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592
Communication dans un congrès
hal-04680725
v1
|
|
|
Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04150168
v1
|
|
|
Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power convertersICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04221605
v1
|
|
|
New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power DevicesEuropean Conference on Power Electronics and Applications, Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264294⟩
Communication dans un congrès
hal-04316671
v1
|
|
|
Application of the Double Source Switching Test to GaN HEMTs25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩
Communication dans un congrès
hal-04225311
v1
|
|
|
Impact of Wide Band-Gap Semiconductors on the Design in Power ElectronicsSymposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France
Communication dans un congrès
hal-04224402
v1
|
|
|
Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04222211
v1
|
|
|
First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France
Communication dans un congrès
hal-04240602
v1
|
|
|
Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès
hal-04203163
v1
|
|
|
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
hal-04147862
v1
|
Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN DiodesInternational Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Communication dans un congrès
hal-03990840
v1
|
|
|
|
Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modellingSSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan
Communication dans un congrès
cea-03875079
v1
|
|
|
Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩
Communication dans un congrès
hal-03887865
v1
|
|
|
Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
Communication dans un congrès
hal-03856578
v1
|
|
|
Switching Behavior and Comparison of Wide Bandgap Devices for Automotive ApplicationsEPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩
Communication dans un congrès
hal-03260519
v1
|
|
|
Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding DesignCDC, Dec 2021, Austin, United States. ⟨10.1109/CDC45484.2021.9682901⟩
Communication dans un congrès
hal-03375498
v1
|
|
|
Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC MicrogridsPEAS, Nov 2021, Shanghai, China. ⟨10.1109/PEAS53589.2021.9628872⟩
Communication dans un congrès
hal-03375502
v1
|
|
|
Modelling and Control of a Power Flow Controller for DC MicrogridsEPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570493⟩
Communication dans un congrès
hal-03360965
v1
|
|
|
Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction TransistorEPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩
Communication dans un congrès
hal-02945919
v1
|
|
|
Analysis of Parasitic Elements in Power Modules Based on GaN ComponentsPCIM Europe 2020, Jul 2020, Nuremberg, Germany
Communication dans un congrès
hal-02945892
v1
|
|
|
Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTsEPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩
Communication dans un congrès
hal-02945913
v1
|
|
|
Static characteristics of 5 kV SiC BJTs and Darlington’sInternational Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan
Communication dans un congrès
hal-02428513
v1
|
|
|
Benefits of GaN transistors and embedding in PCB laminatesSIA Power Train & Electronics, Jun 2019, Paris, France
Communication dans un congrès
hal-02291496
v1
|
|
|
SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operationESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩
Communication dans un congrès
hal-01984359
v1
|
|
|
Packaging Solution for SiC Power Modules with a Fail-to-Short CapabilityAPEC, Mar 2019, Anaheim, Californie, United States. ⟨10.1109/APEC.2019.8722126⟩
Communication dans un congrès
hal-02076181
v1
|
|
|
V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench GateIRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩
Communication dans un congrès
hal-02099781
v1
|
|
|
An investigation of current distribution over four GaN HEMTs in parallel configurationsThe 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Oct 2019, Raleigh, United States. ⟨10.1109/WiPDA46397.2019.8998816⟩
Communication dans un congrès
hal-02405882
v1
|
|
|
A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices45th IEEE IECON, Oct 2019, Lisbonne, Portugal. ⟨10.1109/IECON.2019.8927490⟩
Communication dans un congrès
hal-02405883
v1
|
|
|
Robustness study of 1700 V 45 mΩ SiC MOSFETs2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩
Communication dans un congrès
hal-01942728
v1
|
|
|
Advanced Electrical characterisation of high voltage 4H-SiC PiN diodesECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Communication dans un congrès
hal-01985994
v1
|
|
|
Subthreshold Drain current hysteresis of planar SiC MOSFETsECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04
Communication dans un congrès
hal-02428531
v1
|
|
|
Microréseaux DC : avantages des réseaux maillésSymposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02134229
v1
|
|
|
Repetitive short-circuit measurement on SiC MOSFETECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
hal-01980834
v1
|
|
|
High-Voltage SiC-JFET Fabrication and Full CharacterizationECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5
Communication dans un congrès
hal-02428523
v1
|
An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power moduleIEMDC, May 2017, Miami, FL, United States. pp.MO263, ⟨10.1109/IEMDC.2017.8002028⟩
Communication dans un congrès
hal-01532058
v1
|
|
|
|
Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap SemiconductorsWiPDA, Oct 2017, Albuquerque, United States. ⟨10.1109/WiPDA.2017.8170581⟩
Communication dans un congrès
hal-01645029
v1
|
|
|
Improved Layout of Inverter for EMC AnalysisMore Electrical Aircraft (MEA), Feb 2017, Bordeaux, France
Communication dans un congrès
hal-01715021
v1
|
|
|
Robustness of SiC MOSFET under avalanche conditionsAPEC, Mar 2017, Tampa, FL, United States. pp.2263-2268, ⟨10.1109/APEC.2017.7931015⟩
Communication dans un congrès
hal-01535735
v1
|
|
|
Evaluation of printed-circuit boards materials for high temperature operationHiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom
Communication dans un congrès
hal-01565131
v1
|
Étude de la robustesse de l’oxyde de grille pour des applications aéronautiquesJCGE, May 2017, Arras, France. pp.146345
Communication dans un congrès
hal-01534712
v1
|
|
Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-gridsInternational conference on components and systems for DC grids, Mar 2017, Grenoble, France
Communication dans un congrès
hal-01793569
v1
|
|
Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC BreakerCOSYS-DC, Mar 2017, Grenoble, France. pp.Electronique
Communication dans un congrès
hal-01639199
v1
|
|
|
|
Analyse de la robustesse des MOSFET SiC pour les applications diode-lessSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361711
v1
|
|
|
State of the Art of Gate-Drive Power Supplies for Medium and High Voltage ApplicationsPCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD
Communication dans un congrès
hal-01316570
v1
|
|
|
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devicesCAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Communication dans un congrès
hal-01388019
v1
|
Vertical termination filled with adequate dielectric for SiC devices in HVDC applicationsInternational Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138529
v1
|
|
|
|
Robustness of SiC MOSFETs in short-circuit modePCIM Europe 2015, May 2015, Nuremberg, Germany
Communication dans un congrès
hal-01196528
v1
|
|
|
Considerations for High Temperature Power Electronics18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia
Communication dans un congrès
hal-01372146
v1
|
High temperature operation of SiC transistorsAdvanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States
Communication dans un congrès
hal-01373030
v1
|
|
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTsESREF, Oct 2015, Toulouse, France. pp.1708-1713
Communication dans un congrès
hal-01700463
v1
|
|
|
|
4H-SiC P-N junctions realized by VLS for JFET lateral structuresECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
hal-02133686
v1
|
|
|
Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065154
v1
|
|
|
Estimation des pertes dans les transistors bipolaires SiCSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065220
v1
|
|
|
Power Loss Estimation in SiC Power BJTsPCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p
Communication dans un congrès
hal-00997718
v1
|
|
|
Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodesAPEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, ⟨10.1109/APEC.2013.6520668⟩
Communication dans un congrès
hal-00829353
v1
|
|
|
SiC Vertical JFET Pure Diode-Less Inverter LegAPEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩
Communication dans un congrès
hal-00829343
v1
|
|
|
Analysis of the SiC VJFET gate punch-through and its dependence with the temperatureEPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩
Communication dans un congrès
hal-00874655
v1
|
High Temperature Ageing of Fe-based Nanocrystalline RibbonsHiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès
hal-00760373
v1
|
|
A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETsECCE, Sep 2012, Raleigh, United States. pp.3581, ⟨10.1109/ECCE.2012.6342486⟩
Communication dans un congrès
hal-00739021
v1
|
|
|
|
Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applicationsISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩
Communication dans un congrès
hal-00707820
v1
|
|
|
3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438
Communication dans un congrès
hal-00707741
v1
|
Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky DiodeECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩
Communication dans un congrès
hal-00739006
v1
|
|
An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical ActuatorsHiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès
hal-00760366
v1
|
|
Temperature dependence of silicon and silicon carbide power devices: An experimental analysisMELECON 2012, Mar 2012, Tunis, Tunisia. pp.97 - 101, ⟨10.1109/MELCON.2012.6196389⟩
Communication dans un congrès
hal-00747425
v1
|
|
|
|
Report de puce par frittage d'argent - mise en oeuvre et analyse14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)
Communication dans un congrès
hal-00729156
v1
|
|
|
Thermal Runaway Robustness of SiC VJFETsCSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-00759975
v2
|
|
|
Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24)
Communication dans un congrès
hal-00729345
v1
|
Active protections for normally-on SiC JFETsEPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629227
v1
|
|
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
hal-00661500
v1
|
|
Integrated common mode capacitors for SiC JFET invertersAPEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩
Communication dans un congrès
hal-00618665
v1
|
|
|
|
Higher temperature power electronics for larger-scale mechatronic integrationAutomotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination)
Communication dans un congrès
hal-00687139
v1
|
A multi-physics model of the VJFET with a lateral channelEPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629220
v1
|
|
|
|
High-temperature die-attaches for SiC power devicesEPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161
Communication dans un congrès
hal-00672602
v1
|
High-temperature behavior of SiC power diodesEPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629225
v1
|
|
Thermal Requirements of SiC Power Devices6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Communication dans un congrès
hal-00672631
v1
|
|
Ultrafast safety system to turn-off normally on SiC JFETsEPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629232
v1
|
|
|
|
Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and CharacterizationHiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès
hal-00672619
v1
|
SIC inverter optimization for high temperature applications27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France
Communication dans un congrès
hal-02937166
v1
|
|
Caractérisation des non-linéarités dans les condensateurs céramiques haute température13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618657
v1
|
|
High Temperature Inverter for Airborne ApplicationHiTEC 2010, May 2010, Albuquerque, United States. pp.000222
Communication dans un congrès
hal-00485279
v1
|
|
Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed InverterHiTEC 2010, May 2010, Albuquerque, United States. pp.000236
Communication dans un congrès
hal-00485284
v1
|
|
Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618715
v1
|
|
Normally-On SiC JFETs in power converters: Gate driver and safe operation6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD
Communication dans un congrès
hal-00629214
v1
|
|
Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618693
v1
|
|
|
|
Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltagesEPE, Sep 2009, Barcelone, France. pp.1--8
Communication dans un congrès
hal-00446059
v1
|
|
|
State of the art of High Temperature Power ElectronicsMicrotherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès
hal-00413349
v1
|
Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD TechniqueECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Communication dans un congrès
hal-00391369
v1
|
|
High Power Density SiC 450A AccuMOSFET for Current Limiting ApplicationsCSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Communication dans un congrès
hal-00391376
v1
|
|
SiC JFET for high temperature power switches5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4
Communication dans un congrès
hal-00373058
v1
|
|
|
|
Towards an Airborne High Temperature SiC Inverter2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, Rhodes, France. pp.3178-3183, ⟨10.1109/PESC.2008.4592442⟩
Communication dans un congrès
hal-00467659
v1
|
High temperature characterization of SiC-JFET and modellingECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417501⟩
Communication dans un congrès
hal-00369458
v1
|
|
|
|
SiC Power Semiconductor Devices for new Applications in Power Electronics13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
Communication dans un congrès
hal-00373016
v1
|
Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
hal-00372982
v1
|
|
Current limiting with SiC JFET structures5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5
Communication dans un congrès
hal-00373046
v1
|
|
Electrical characterization of 5kV SiC bipolar diodes in switching transient regimeECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩
Communication dans un congrès
hal-00369457
v1
|
|
VHDL-AMS model of IGBT for electro-thermal simulationECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417461⟩
Communication dans un congrès
hal-00369426
v1
|
|
Modeling and high temperature characterization of SiC-JFETIEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩
Communication dans un congrès
hal-00369420
v1
|
|
|
|
Contact ohmique de faible résistivité sur SiC-4H dopé type-P4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Communication dans un congrès
hal-04606381
v1
|
|
|
Composant de protection série en SiC 450A de forte densité de puissance12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France
Communication dans un congrès
hal-04624757
v1
|
|
|
Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France
Communication dans un congrès
hal-04606571
v1
|
|
|
New Applications in Power Electronics Based on SiC Power DevicesICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩
Communication dans un congrès
hal-02958610
v1
|
|
|
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studiesICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Communication dans un congrès
hal-02958620
v1
|
|
|
Onduleur à JFET sans diode de roue libre externe11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
hal-04618123
v1
|
|
|
High temperature operating converter4th CIPS, Jun 2006, Naples, Italy. pp.201-204
Communication dans un congrès
hal-00413394
v1
|
Les enjeux de la haute température11ème EPF, Jul 2006, Grenoble, France
Communication dans un congrès
hal-00412423
v1
|
|
Analytic thermal modelling of power electronic components: The Diffusive Representation4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.)
Communication dans un congrès
hal-00413392
v1
|
|
300 °C operating junction temperature inverter leg investigationsEPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413402
v1
|
|
Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMSICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155
Communication dans un congrès
hal-01486590
v1
|
|
|
|
Bond Graph Modeling of Current Diffusion in Magnetic CoresICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91
Communication dans un congrès
hal-00412621
v1
|
|
|
Paralleling of Low-Voltage MOSFETs Operating in Avalanche ConditionsEPE, Sep 2005, Dresden, Germany. ⟨10.1109/EPE.2005.219271⟩
Communication dans un congrès
hal-00138894
v1
|
Fast over-current protection of high power IGBT modulesEPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413400
v1
|
|
Power converter's optimisation, analysis and designEPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413401
v1
|
|
|
|
A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-BridgeEPE, Sep 2003, Toulouse, France. pp.1-10
Communication dans un congrès
hal-00413309
v1
|
|
|
Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-BridgeIEEE PESC, Jun 2003, Accapulco, Mexico. pp.901 - 906, ⟨10.1109/PESC.2003.1218175⟩
Communication dans un congrès
hal-00413325
v1
|
|
|
Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩
Communication dans un congrès
hal-04386919
v1
|
Diagnostic de défauts du rotor de l'hélicoptère : supervision de cartes auto-organisatrices avec critère de convergence géométrique[Rapport de recherche] LSIS. 2006
Rapport
(rapport de recherche)
hal-01488845
v1
|
|
|
Modélisation et simulation des composants et des systèmes électroniques de puissanceEnergie électrique. INSA de Lyon, 1994
HDR
tel-00731059
v1
|
Chargement...
Chargement...