Hervé Morel
Présentation
Publications
Publications
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Analysis of Robustness of 650 V GaN HEMT under Repetitive Short-CircuitsESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France |
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Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switchingESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France |
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Aging of p-GaN gate HEMTs under hard-switching conditionsESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France |
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Étude de la fiabilité des GaN SP-HEMT sous surtensions en commutation dureSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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Méthode d'étude de fiabilité de MOSFET SiC mis en parallèle soumis à une avalancheSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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Méthode d'étude de fiabilité de MOSFET SiC mis en parallèle soumis à une avalancheSymposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France |
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction TransistorInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 |
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Repetitive Short-circuits on 650 V GaNPCIM Europe 2024, Jun 2024, Nuremberg, Germany |
Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs13th International Conference on Integrated Power Electronics Systems, CIPS 2024, Mar 2024, Dusseldorf, Germany. pp.Pages 467 - 475 |
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodesInternational Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 |
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France |
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power convertersICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France |
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New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power DevicesEuropean Conference on Power Electronics and Applications, Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264294⟩ |
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Design and Characterization of an Optical 4H-SiC Bipolar Junction TransistorICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy |
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Application of the Double Source Switching Test to GaN HEMTs25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩ |
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Impact of Wide Band-Gap Semiconductors on the Design in Power ElectronicsSymposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France |
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩ |
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical IntegrationIEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩ |
Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN DiodesInternational Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India |
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩ |
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ |
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modellingSSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan |
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Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC MicrogridsPEAS, Nov 2021, Shanghai, China. ⟨10.1109/PEAS53589.2021.9628872⟩ |
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive ApplicationsEPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩ |
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Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding DesignCDC, Dec 2021, Austin, United States. ⟨10.1109/CDC45484.2021.9682901⟩ |
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Modelling and Control of a Power Flow Controller for DC MicrogridsEPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570493⟩ |
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction TransistorEPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩ |
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Analysis of Parasitic Elements in Power Modules Based on GaN ComponentsPCIM Europe 2020, Jul 2020, Nuremberg, Germany |
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTsEPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩ |
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Static characteristics of 5 kV SiC BJTs and Darlington’sInternational Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan |
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operationESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩ |
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Benefits of GaN transistors and embedding in PCB laminatesSIA Power Train & Electronics, Jun 2019, Paris, France |
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V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench GateIRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩ |
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Packaging Solution for SiC Power Modules with a Fail-to-Short CapabilityAPEC, Mar 2019, Anaheim, Californie, United States. ⟨10.1109/APEC.2019.8722126⟩ |
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An investigation of current distribution over four GaN HEMTs in parallel configurationsThe 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Oct 2019, Raleigh, United States. ⟨10.1109/WiPDA46397.2019.8998816⟩ |
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A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices45th IEEE IECON, Oct 2019, Lisbonne, Portugal. ⟨10.1109/IECON.2019.8927490⟩ |
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Robustness study of 1700 V 45 mΩ SiC MOSFETs2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩ |
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodesECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2 |
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Subthreshold Drain current hysteresis of planar SiC MOSFETsECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04 |
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Microréseaux DC : avantages des réseaux maillésSymposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France |
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Repetitive short-circuit measurement on SiC MOSFETECSCRM'18, Sep 2018, Birmingham, United Kingdom |
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High-Voltage SiC-JFET Fabrication and Full CharacterizationECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5 |
An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power moduleIEMDC, May 2017, Miami, FL, United States. pp.MO263, ⟨10.1109/IEMDC.2017.8002028⟩ |
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Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap SemiconductorsWiPDA, Oct 2017, Albuquerque, United States. ⟨10.1109/WiPDA.2017.8170581⟩ |
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Improved Layout of Inverter for EMC AnalysisMore Electrical Aircraft (MEA), Feb 2017, Bordeaux, France |
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Evaluation of printed-circuit boards materials for high temperature operationHiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom |
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Robustness of SiC MOSFET under avalanche conditionsAPEC, Mar 2017, Tampa, FL, United States. pp.2263-2268, ⟨10.1109/APEC.2017.7931015⟩ |
Étude de la robustesse de l’oxyde de grille pour des applications aéronautiquesJCGE, May 2017, Arras, France. pp.146345 |
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Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-gridsInternational conference on components and systems for DC grids, Mar 2017, Grenoble, France |
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Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC BreakerCOSYS-DC, Mar 2017, Grenoble, France. pp.Electronique |
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Analyse de la robustesse des MOSFET SiC pour les applications diode-lessSymposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France |
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State of the Art of Gate-Drive Power Supplies for Medium and High Voltage ApplicationsPCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD |
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devicesCAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ |
Vertical termination filled with adequate dielectric for SiC devices in HVDC applicationsInternational Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy |
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Robustness of SiC MOSFETs in short-circuit modePCIM Europe 2015, May 2015, Nuremberg, Germany |
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Considerations for High Temperature Power Electronics18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia |
High temperature operation of SiC transistorsAdvanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States |
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4H-SiC P-N junctions realized by VLS for JFET lateral structuresECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 |
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTsESREF, Oct 2015, Toulouse, France. pp.1708-1713 |
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Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France |
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Estimation des pertes dans les transistors bipolaires SiCSymposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France |
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Power Loss Estimation in SiC Power BJTsPCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p |
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Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodesAPEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, ⟨10.1109/APEC.2013.6520668⟩ |
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SiC Vertical JFET Pure Diode-Less Inverter LegAPEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩ |
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Analysis of the SiC VJFET gate punch-through and its dependence with the temperatureEPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩ |
High Temperature Ageing of Fe-based Nanocrystalline RibbonsHiTEC 2012, May 2012, Albuquerque, United States. 6p |
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3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438 |
A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETsECCE, Sep 2012, Raleigh, United States. pp.3581, ⟨10.1109/ECCE.2012.6342486⟩ |
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Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applicationsISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩ |
Temperature dependence of silicon and silicon carbide power devices: An experimental analysisMELECON 2012, Mar 2012, Tunis, Tunisia. pp.97 - 101, ⟨10.1109/MELCON.2012.6196389⟩ |
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Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky DiodeECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩ |
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An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical ActuatorsHiTEC 2012, May 2012, Albuquerque, United States. 6p |
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Report de puce par frittage d'argent - mise en oeuvre et analyse14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61) |
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Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24) |
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Thermal Runaway Robustness of SiC VJFETsCSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p |
Active protections for normally-on SiC JFETsEPE, Aug 2011, Birmingham, United Kingdom. pp.CD |
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Thermal requirements of SiC Power Devices6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France |
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High-temperature die-attaches for SiC power devicesEPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161 |
A multi-physics model of the VJFET with a lateral channelEPE, Aug 2011, Birmingham, United Kingdom. pp.CD |
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Integrated common mode capacitors for SiC JFET invertersAPEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩ |
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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature ApplicationsCIMA, Mar 2011, Beyrouth, Lebanon. pp.CD |
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Higher temperature power electronics for larger-scale mechatronic integrationAutomotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination) |
High-temperature behavior of SiC power diodesEPE, Aug 2011, Birmingham, United Kingdom. pp.CD |
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Ultrafast safety system to turn-off normally on SiC JFETsEPE, Aug 2011, Birmingham, United Kingdom. pp.CD |
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and CharacterizationHiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7 |
SIC inverter optimization for high temperature applications27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France |
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Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)13ème EPF, Jun 2010, Saint-Nazaire, France |
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Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed InverterHiTEC 2010, May 2010, Albuquerque, United States. pp.000236 |
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Caractérisation des non-linéarités dans les condensateurs céramiques haute température13ème EPF, Jun 2010, Saint-Nazaire, France |
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High Temperature Inverter for Airborne ApplicationHiTEC 2010, May 2010, Albuquerque, United States. pp.000222 |
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Normally-On SiC JFETs in power converters: Gate driver and safe operation6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD |
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Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance13ème EPF, Jun 2010, Saint-Nazaire, France |
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Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltagesEPE, Sep 2009, Barcelone, France. pp.1--8 |
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State of the art of High Temperature Power ElectronicsMicrotherm, Jun 2009, Lodz, Poland. pp.8-17 |
Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD TechniqueECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ |
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High Power Density SiC 450A AccuMOSFET for Current Limiting ApplicationsCSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩ |
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SiC JFET for high temperature power switches5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4 |
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VHDL-AMS model of IGBT for electro-thermal simulationECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417461⟩ |
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High temperature characterization of SiC-JFET and modellingECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417501⟩ |
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Towards an Airborne High Temperature SiC Inverter2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, Rhodes, France. pp.3178-3183, ⟨10.1109/PESC.2008.4592442⟩ |
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SiC Power Semiconductor Devices for new Applications in Power Electronics13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ |
Electrical characterization of 5kV SiC bipolar diodes in switching transient regimeECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩ |
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Current limiting with SiC JFET structures5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5 |
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 |
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Modeling and high temperature characterization of SiC-JFETIEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩ |
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Composant de protection série en SiC 450A de forte densité de puissance12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France |
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France |
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Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France |
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New Applications in Power Electronics Based on SiC Power DevicesICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩ |
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studiesICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ |
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Onduleur à JFET sans diode de roue libre externe11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France |
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High temperature operating converter4th CIPS, Jun 2006, Naples, Italy. pp.201-204 |
Les enjeux de la haute température11ème EPF, Jul 2006, Grenoble, France |
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Analytic thermal modelling of power electronic components: The Diffusive Representation4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.) |
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Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMSICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155 |
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300 °C operating junction temperature inverter leg investigationsEPE, Sep 2005, Dresden, Germany |
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Paralleling of Low-Voltage MOSFETs Operating in Avalanche ConditionsEPE, Sep 2005, Dresden, Germany. ⟨10.1109/EPE.2005.219271⟩ |
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Bond Graph Modeling of Current Diffusion in Magnetic CoresICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91 |
Fast over-current protection of high power IGBT modulesEPE, Sep 2005, Dresden, Germany |
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Power converter's optimisation, analysis and designEPE, Sep 2005, Dresden, Germany |
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Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-BridgeIEEE PESC, Jun 2003, Accapulco, Mexico. pp.901 - 906, ⟨10.1109/PESC.2003.1218175⟩ |
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A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-BridgeEPE, Sep 2003, Toulouse, France. pp.1-10 |
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩ |
Diagnostic de défauts du rotor de l'hélicoptère : supervision de cartes auto-organisatrices avec critère de convergence géométrique[Rapport de recherche] LSIS. 2006 |
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Modélisation et simulation des composants et des systèmes électroniques de puissanceEnergie électrique. INSA de Lyon, 1994 |