Hervé Morel

217
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Publications

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Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results

Dominique Planson , Dominique Tournier , Camille Sonneville , Pascal Bevilacqua , Luong Viet Phung et al.
Materials Science in Semiconductor Processing, 2024, 178, pp.108444. ⟨10.1016/j.mssp.2024.108444⟩
Article dans une revue hal-04664143 v1

Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

Joao Oliveira , Jean-Michel Reynes , Hervé Morel , Pascal Frey , Olivier Perrotin et al.
Energies, 2024, 17, pp.5476. ⟨10.3390/en17215476⟩
Article dans une revue hal-04843993 v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Camille Sonneville et al.
Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩
Article dans une revue hal-04677726 v1
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Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions

Joao Oliveira , Pascal Frey , Hervé Morel , Jean-Michel Reynes , Jérémie Burky et al.
Microelectronics Reliability, 2023, 148, pp.115166. ⟨10.1016/j.microrel.2023.115166⟩
Article dans une revue hal-04316701 v1
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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

P. Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Hervé Morel , Dominique Planson
Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩
Article dans une revue hal-04199489 v1
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Robust Regulation of a Power Flow Controller via Nonlinear Integral Action

Tanguy Simon , Mattia Giaccagli , Jean-François Trégouët , Daniele Astolfi , Vincent Andrieu et al.
IEEE Transactions on Control Systems Technology, 2023, 31 (4), pp.1636 - 1648. ⟨10.1109/TCST.2023.3236474⟩
Article dans une revue hal-03920401 v1
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First results on 1.2 kV SiC MOSFET body diode robustness tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , David Trémouilles et al.
Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩
Article dans une revue hal-04282544 v1
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Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs

O. Aviñó-Salvadó , Cyril Buttay , F. Bonet , C. Raynaud , P. Bevilacqua et al.
IEEE Transactions on Industrial Electronics, In press, ⟨10.1109/TIE.2023.3281705⟩
Article dans une revue hal-04147050 v1
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Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Tamiris Grossl Bade , Hassan Hamad , Adrien Lambert , Hervé Morel , Dominique Planson
Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩
Article dans une revue hal-04121028 v1
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Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.
Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩
Article dans une revue hal-04276812 v1
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Capacitance temperature dependence analysis of GaN-on-Si power transistors

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Matthew Charles , Marie-Anne Jaud et al.
Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩
Article dans une revue cea-03874112 v1
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Robust Nonlinear Control of a Power Flow Controller for Meshed DC Grids

Tanguy Simon , Jean-François Trégouët , Xuefang Lin-Shi , Hervé Morel
Control Engineering Practice, 2022, 131, ⟨10.1016/j.conengprac.2022.105389⟩
Article dans une revue hal-03860875 v1
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Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

Ali Ammar , Luong Viêt Phung , Dominique Planson , Hervé Morel , Camille Sonneville
Materials Science Forum, 2022, 1062, pp.613-618. ⟨10.4028/p-vms03o⟩
Article dans une revue hal-03703994 v1
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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

P. Vigneshwara Raja , Christophe Raynaud , Camille Sonneville , Atse Julien Eric N’dohi , Hervé Morel et al.
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Article dans une revue hal-03826217 v1
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New Definition of Critical Energy for SiC MOSFET Robustness under Short- Circuit Operations: the Repetitive Critical Energy

C. Chen , Tien-Anh A Nguyen , D Labrousse , S Lefebvre , Cyril Buttay et al.
Microelectronics Reliability, 2020, 114, pp.113839. ⟨10.1016/j.microrel.2020.113839⟩
Article dans une revue hal-02968998 v1
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Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Besar Asllani , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Luong Viet Phung et al.
Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩
Article dans une revue hal-02931290 v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , Alberto Castellazzi , Dominique Planson , Hervé Morel
Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩
Article dans une revue hal-02060341 v1
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Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT

Layachi Boussouar , Hervé Morel , Bruno Allard , Cyril Buttay
International Journal of Power Electronics, 2019, 10 (3), pp.187. ⟨10.1504/ijpelec.2019.099337⟩
Article dans une revue hal-02121811 v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , Jean-Baptiste Fonder , Beverley Choucoutou et al.
Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩
Article dans une revue hal-02060334 v1
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10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization

Besar Asllani , Hervé Morel , Luong Viêt Phung , Dominique Planson
Energies, 2019, ⟨10.3390/en12234566⟩
Article dans une revue hal-02398585 v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , Abderrahime Zaoui , Gregory Grosset , Dominique Planson et al.
Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩
Article dans une revue hal-02060228 v1
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Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature

Oriol Aviño Salvado , Besar Asllani , Cyril Buttay , Christophe Raynaud , Hervé Morel
IEEE Transactions on Electron Devices, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩
Article dans une revue hal-02418097 v1
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SiC MOSFETs robustness for diode-less applications

Oriol Aviño Salvado , C. Cheng , Cyril Buttay , Hervé Morel , D Labrousse et al.
EPE Journal - European Power Electronics and Drives, 2018, pp.1 - 8. ⟨10.1080/09398368.2018.1456836⟩
Article dans une revue hal-01844980 v1
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Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode

Oriol Aviño Salvado , Hervé Morel , Cyril Buttay , Denis Labrousse , Stéphane Lefebvre
Microelectronics Reliability, 2018, 88-90, pp.636-640. ⟨10.1016/j.microrel.2018.06.033⟩
Article dans une revue hal-01895791 v1
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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Besar Asllani , Asad Fayyaz , Alberto Castellazzi , Hervé Morel , Dominique Planson
Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩
Article dans une revue hal-01889461 v1
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A Novel Approach to Accurately Determine the tq Parameter of Thyristors

Hatem Garrab , Atef Jedidi , Hervé Morel , Kamel Besbes
IEEE Transactions on Industrial Electronics, 2017, 64 (1), pp.206 - 216. ⟨10.1109/tie.2016.2609381⟩
Article dans une revue hal-01617496 v1
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Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling

Wissam Sabbah , Faical Arabi , Oriol Aviño Salvado , Cyril Buttay , Loic Théolier et al.
Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.091⟩
Article dans une revue hal-01562549 v1
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High temperature ageing of microelectronics assemblies with SAC solder joints

Wissam Sabbah , Pierre Bondue , Oriol Aviño Salvado , Cyril Buttay , Héìène Frémont et al.
Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.065⟩
Article dans une revue hal-01564755 v1
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Electrical, thermal and mechanical properties of poly-etherimide epoxy-diamine blend

Nour Halawani , Jean-Louis Augé , Hervé Morel , O. Gain , S. Pruvost
Composites Part B: Engineering, 2017, -, 110 (-), pp.530 - 541. ⟨10.1016/j.compositesb.2016.11.022⟩
Article dans une revue hal-01626136 v1
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Evaluation of printed-circuit boards materials for high temperature operation

Oriol Aviño Salvado , Wissam Sabbah , Cyril Buttay , Hervé Morel , Pascal Bevilacqua
Journal of Microelectronics and Electronic Packaging, 2017, 14 (4), ⟨10.4071/imaps.516313⟩
Article dans une revue hal-01674483 v1

The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case

Atef Jedidi , Hatem Garrab , Hervé Morel , Kamel Besbes
Journal of Power Electronics, 2017, 17 (2), pp.561 - 569. ⟨10.6113/jpe.2017.17.2.561⟩
Article dans une revue hal-01626139 v1

A Control Strategy of DC Building Microgrid Connected to the Neighborhood and AC Power Network

Thi Thuong Huyen Ma , Hamed Yahoui , Hoang Giang Vu , Nicolas Siauve , Hervé Morel
Buildings, 2017, 7 (2), ⟨10.3390/buildings7020042⟩
Article dans une revue hal-01626141 v1
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SiC power devices packaging with a short-circuit failure mode capability

Ilyas Dchar , Cyril Buttay , Hervé Morel
Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.07.003⟩
Article dans une revue hal-01562547 v1

A spiral planar inductor: An experimentally verified physically based model for frequency and time domains

Aymen Ammouri , Tarek Ben Salah , Hervé Morel
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2017, pp.e2272. ⟨10.1002/jnm.2272⟩
Article dans une revue hal-01626146 v1
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Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Thi Thanh Huyen Nguyen , Mihai Lazar , Jean-Louis Augé , Hervé Morel , Luong Viet Phung et al.
Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩
Article dans une revue hal-01391838 v1
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Avalanche robustness of SiC Schottky diode

Ilyas Dchar , Cyril Buttay , Hervé Morel
Microelectronics Reliability, 2016, ⟨10.1016/j.microrel.2016.07.086⟩
Article dans une revue hal-01373039 v1
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A Novel approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems

Atef Jedidi , Hatem Garrab , Hervé Morel , Kamel Besbes
IEEE Transactions on Industrial Electronics, 2015, 62 (4), ⟨10.1109/TIE.2014.2356440⟩
Article dans une revue hal-01388299 v1
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VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.
Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩
Article dans une revue hal-01387983 v1

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

Sameh Mtimet , Walid Ben Salah , Salah Tarek Ben , Ferid Kourda , Hervé Morel
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (3), pp. 287-300. ⟨10.1002/jnm.2005⟩
Article dans une revue istex hal-01388318 v1
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Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickael Petit , Cyril Buttay et al.
Microelectronics Reliability, 2015, pp.6. ⟨10.1016/j.microrel.2015.06.097⟩
Article dans une revue hal-01198584 v1
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P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices

Mihai Lazar , Selsabil Sejil , L. Lalouat , Christophe Raynaud , D. Carole et al.
Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342
Article dans une revue hal-01626119 v1

Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design

Hervé Morel , Aymen Ammouri , Walid Ben Salah , Sofiane Khachroumi , Tarek Ben Salah et al.
European Physical Journal: Applied Physics, 2014, 66 (2), pp.20901. ⟨10.1051/epjap/2014130430⟩
Article dans une revue istex hal-01006044 v1
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LVDC: An Efficient Energy Solution for On-Grid Photovoltaic Applications

Anis Ammous , Hervé Morel
Smart Grid and Renewable Energy, 2014, 5 (4), pp.63-76. ⟨10.4236/sgre.2014.54007⟩
Article dans une revue hal-01005973 v1

Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET

Sami Ghedira , Cyril Buttay , Hervé Morel , Kamel Besbes
European Physical Journal: Applied Physics, 2014, 66 (2), pp.20103. ⟨10.1051/epjap/2014130533⟩
Article dans une revue istex hal-01005929 v1
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Thermal Stability of Silicon Carbide Power JFETs

Cyril Buttay , Rémy Ouaida , Hervé Morel , Dominique Bergogne , Christophe Raynaud et al.
IEEE Transactions on Electron Devices, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩
Article dans une revue hal-00881667 v1
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Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters

Rémi Robutel , Christian Martin , Cyril Buttay , Hervé Morel , Paulo Mattavelli et al.
IEEE Transactions on Power Electronics, 2013, PP (99), pp.1. ⟨10.1109/TPEL.2013.2279772⟩
Article dans une revue hal-00874455 v1

Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages

Dominique Bergogne , Cyril Buttay , Rémi Robutel , Fabien Dubois , Rémy Ouaida et al.
EPE Journal - European Power Electronics and Drives, 2013, 23 (3), pp.5--12
Article dans une revue hal-00997389 v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne et al.
Materials Science Forum, 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩
Article dans une revue hal-00799884 v1
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Die attach using silver sintering. Practical implementation and analysis

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.
European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩
Article dans une revue hal-00874465 v1
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Thermal stability of silicon-carbide power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli et al.
IEEE Transactions on Electron Devices, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩
Article dans une revue hal-00672440 v1
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Full densification of Molybdenum powders using Spark Plasma Sintering

Bassem Mouawad , Maher Soueidan , D. Fabregue , Cyril Buttay , Vincent Bley et al.
Metallurgical and Materials Transactions A, 2012, pp.1-8. ⟨10.1007/s11661-012-1144-2⟩
Article dans une revue hal-00707782 v1

Nonlinear average modeling of multilevel converters

B. Omri , Kaiçar Ammous , Anis Ammous , Hervé Morel
International Review on Modelling and Simulations, 2012, 5 (1), pp.154-163
Article dans une revue hal-00747412 v1

Optimal design of power converter using multi-objective genetic algorithm

H. Mejbri , Kaiçar Ammous , Hervé Morel , Anis Ammous
International Review on Modelling and Simulations, 2012, 5 (2), pp.793-802
Article dans une revue hal-00747409 v1

Multi-Objective Optimization of Power Converter Sizing Based on Genetic Algorithms: Application to Photovoltaic Systems

Hanen Mejbri , Hervé Morel , Kaiçar Ammous , Anis Ammous
International Review on Modelling and Simulations, 2012, 5 (2), pp. 826-839
Article dans une revue hal-00854436 v1
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Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding

Bassem Mouawad , Maher Soueidan , D. Fabregue , Cyril Buttay , Bruno Allard et al.
IEEE Transactions on Components and Packaging Technologies, 2012, 2 (4), pp.553 - 560. ⟨10.1109/TCPMT.2012.2186453⟩
Article dans une revue hal-00672244 v1

Normally-On SIC JFETs: Active Protections

Fabien Dubois , Dominique Bergogne , Cyril Buttay , Hervé Morel , Régis Meuret
EPE Journal - European Power Electronics and Drives, 2012, 22 (3), pp.6-13
Article dans une revue hal-00821756 v1

Characterization and VHDL-AMS modeling of SiC-JFET transistor

Rami Mousa , Dominique Planson , Hervé Morel
European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩
Article dans une revue istex hal-00747438 v1

Modelling, analysis, and experimental study of SiC JFET body diode

Tarek Ben Salah , Y. Lahbib , Hervé Morel
European Physical Journal: Applied Physics, 2011, 53 (1), pp.Article Number: 10301. ⟨10.1051/epjap/2010100172⟩
Article dans une revue istex hal-00579353 v1

Design of a High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Rémi Robutel , Christian Martin , Hervé Morel , Cyril Buttay , Nicolas Gazel et al.
Journal of Microelectronics and Electronic Packaging, 2011, 8 (1), pp.23-30
Article dans une revue hal-00729066 v1

SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation

Tarek Ben Salah , Sameh Mtimet , Hervé Morel
Sensor letters, 2011, 9 (6), pp.2347-2350. ⟨10.1166/sl.2011.1762⟩
Article dans une revue hal-00747433 v1

State of the art of high temperature power electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.
Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩
Article dans une revue hal-00597432 v1

Inverse Models of Voltage and Current Probes

Kaiçar Ammous , Hervé Morel , Anis Ammous
IEEE Transactions on Instrumentation and Measurement, 2011, 60 (12), pp.3898 - 3906. ⟨10.1109/TIM.2011.2144710⟩
Article dans une revue hal-00629210 v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.
Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩
Article dans une revue hal-00799902 v1

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Tarek Ben Salah , Sofiane Khachroumi , Hervé Morel
Sensors, 2010, 10 (1), pp.388-399. ⟨10.3390/s100100388⟩
Article dans une revue hal-00476196 v1

Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor

Olivier Berry , Youness Hamieh , Stéphane Rael , Farid Meibody-Tabar , Sébastien Vieillard et al.
Materials Science Forum, 2010, 645-6648, pp.957-960. ⟨10.4028/www.scientific.net/MSF.645-64⟩
Article dans une revue hal-00539615 v1

Toward SiC-JFETs modelling with temperature dependence

Tarek Ben Salah , Hervé Morel , Sameh Mtimet
European Physical Journal: Applied Physics, 2010, 52 (2), pp.Article number 20301. ⟨10.1051/epjap/2010139⟩
Article dans une revue istex hal-00539603 v1
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Analysis of Power Switching Losses Accounting Probe Modeling

Kaiçar Ammous , Hervé Morel , Anis Ammous
IEEE Transactions on Instrumentation and Measurement, 2010, 59 (12), pp.3218 - 3226. ⟨10.1109/TIM.2010.2047302⟩
Article dans une revue hal-00539180 v1
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Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices

Christophe Raynaud , Dominique Tournier , Hervé Morel , Dominique Planson
Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩
Article dans une revue hal-02186368 v1

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Pierre Lefranc , Dominique Planson , Hervé Morel , Dominique Bergogne
Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩
Article dans une revue istex hal-00476201 v1

SiC-VJFETs power switching devices: an improved model and parameter optimization technique

Tarek Ben Salah , Y. Lahbib , Hervé Morel
European Physical Journal: Applied Physics, 2009, 48 (3), pp.Article Number: 30305. ⟨10.1051/epjap/2009187⟩
Article dans une revue istex hal-00476199 v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard et al.
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Article dans une revue hal-04368124 v1
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Jawad Ul Hassan , Pascal Bevilacqua et al.
Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Article dans une revue hal-04368136 v1

Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

Tarek Ben Salah , Mahbouba Amairi , Zina Sassi , Hervé Morel
Sensor letters, 2009, 7 (5), pp.707-711. ⟨10.1166/sl.2009.1135⟩
Article dans une revue hal-00476197 v1

Reduced-Order Thermal Behavioral Model Based on Diffusive Representation

Bruno Allard , Xavier Jordà , Pierre Bidan , Axel Rumeau , Hervé Morel et al.
IEEE Transactions on Power Electronics, 2009, 24 (12), pp.2833-2846. ⟨10.1109/TPEL.2009.2028231⟩
Article dans une revue hal-00476198 v1

Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.
Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Article dans une revue hal-04452237 v1
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On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior

Bruno Allard , Hatem Garrab , Tarek Ben Salah , Hervé Morel , Kaiçar Ammous et al.
IEEE Transactions on Power Electronics, 2008, 23 (1), pp.491-494. ⟨10.1109/TPEL.2007.911882⟩
Article dans une revue hal-00313945 v1

Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes

S. Abis , Kaiçar Ammous , Hervé Morel , Anis Ammous
International Review of Electrical Engineering, 2007, 4 (2), pp.544-556
Article dans une revue hal-00357024 v1

A novel approach to extract accurate design parameters of PiN diode

Tarek Ben Salah , Sami Ghedira , Hatem Garrab , Hervé Morel , Damien Risaletto et al.
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2007, 20 (6), pp.283-297. ⟨10.1002/jnm.646⟩
Article dans une revue istex hal-00358834 v1
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Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes

Tarek Ben Salah , Cyril Buttay , Bruno Allard , Hervé Morel , Sami Ghedira et al.
IEEE Transactions on Power Electronics, 2007, 22 (1), pp.13-20. ⟨10.1109/TPEL.2006.886648⟩
Article dans une revue hal-00135198 v1
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Model Requirements for Simulation of Low-Voltage MOSFET in Automotive Applications

Cyril Buttay , Hervé Morel , Bruno Allard , Pierre Lefranc , Olivier Brevet
IEEE Transactions on Power Electronics, 2006, 21 (3), pp.613-624. ⟨10.1109/TPEL.2006.872383⟩
Article dans une revue hal-00138878 v1

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

Tarek Ben Salah , Hatem Garrab , Sami Ghedira , Bruno Allard , Damien Risaletto et al.
Superlattices and Microstructures, 2006, 40 (4-6), pp.580-587
Article dans une revue hal-00140085 v1

Electro-thermal simulation including a temperature distribution inside power semiconductor devices

Bruno Allard , Hatem Garrab , Hervé Morel
International Journal of Electronics, 2005, 92 (4), pp.189-213
Article dans une revue hal-00140854 v1
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Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement

Bruno Allard , Gérard Coquery , Laurent Dupont , Zoubir Khatir , Mihai Lazar et al.
Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩
Article dans une revue hal-01702019 v1
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On the extraction of PiN diode design parameters for validation of integrated power converter design

Hatem Garrab , Bruno Allard , Hervé Morel , Kaiçar Ammous , Sami Ghedira et al.
IEEE Transactions on Power Electronics, 2005, 20 (3), pp.660-670. ⟨10.1109/TPEL.2005.846544⟩
Article dans une revue hal-00140858 v1
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Avalanche Behavior of Low-Voltage Power MOSFETs

Cyril Buttay , Tarek Ben Salah , Dominique Bergogne , Bruno Allard , Hervé Morel et al.
IEEE Power Electronics Letters, 2004, 2 (3), pp.104-107. ⟨10.1109/LPEL.2004.839638⟩
Article dans une revue hal-00138863 v1

Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation

Hatem Garrab , Bruno Allard , Hervé Morel , Sami Ghedira , Kamel Besbes
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2004, 17 (6): 539-560 NOV-DEC 2004 (6), pp.539-560
Article dans une revue hal-00140093 v1

Developing an advanced PWM-switch model including semiconductor device non-linearities

Anis Ammous , M. Ayedi , Y. Ounajjar , Fayçal Sellami , Kaiçar Ammous et al.
European Physical Journal: Applied Physics, 2003, 21 (2), pp.107-120
Article dans une revue hal-00140101 v1

Developing an equivalent thermal model for discrete semiconductor packages

Anis Ammous , Fayçal Sellami , Kaiçar Ammous , Hervé Morel , Bruno Allard et al.
International Journal of Thermal Sciences, 2003, 42 (5), pp.533-539
Article dans une revue hal-00140112 v1

Non-linear control design for a boost converter using bond graphs

Xuefang Lin-Shi , Jean-Marie Rétif , Bruno Allard , Hervé Morel
Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering, 2002, 216 (I1), pp.1-11
Article dans une revue hal-00140094 v1

Modèle moyen de l'onduleur triphasé de tension pour la conception de lois de commande

Bruno Allard , Hervé Morel , Xuefang Lin-Shi , Jean-Marie Rétif
European Journal of Electrical Engineering, 2002, 5 (1), pp.183-201. ⟨10.3166/rige.5.183-201⟩
Article dans une revue istex hal-00403393 v1
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On the validity of the standard SPICE model of the diode for simulation in power electronics

Nouri Massmoudi , Djébé M'Baïri , Bruno Allard , Hervé Morel
IEEE Transactions on Industrial Electronics, 2001, 48 (4), pp.864-867
Article dans une revue hal-00140095 v1
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Electrothermal modeling of IGBT's: Application to short-circuit conditions

Anis Ammous , Kaiçar Ammous , Hervé Morel , Bruno Allard , Dominique Bergogne et al.
IEEE Transactions on Power Electronics, 2000, 15 (4), pp.778-790
Article dans une revue hal-00140098 v1
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Choosing a thermal model for electrothermal simulation of power semiconductor devices

Anis Ammous , Sami Ghedira , Bruno Allard , Hervé Morel , Denise Renault
IEEE Transactions on Power Electronics, 1999, 14 (2), pp.300-307
Article dans une revue hal-00140099 v1
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Transient temperature measurements and modeling of IGBT's under short circuit

Anis Ammous , Bruno Allard , Hervé Morel
IEEE Transactions on Power Electronics, 1998, 13 (1), pp.12-25
Article dans une revue hal-00140100 v1
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Les composants de puissance : état de l'art, les évolutions

Jean-Pierre Chante , Bruno Allard , Dominique Bergogne , Francis Calmon , René Elhinger et al.
Revue Internationale de Génie Electrique, RIGE, 1998
Article dans une revue hal-02117240 v1
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MODELING OF A NONLINEAR CONDUCTIVE MAGNETIC-CIRCUIT .2. BOND GRAPH FORMULATION

H. Fraisse , Jean-Pierre Masson , F. Marthouret , Hervé Morel
IEEE Transactions on Magnetics, 1995, 31 (6), pp.4068-4070
Article dans une revue hal-00140102 v1
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STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH

Hervé Morel , S. H. Gamal , Jean-Pierre Chante
IEEE Transactions on Power Electronics, 1994, 9 (1), pp.112-120
Article dans une revue hal-00140103 v1
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Repetitive Short-circuits on 650 V GaN

Adrien Lambert , Hervé Morel , Dominique Planson , Luong Viêt Phung , Dominique Tournier et al.
PCIM Europe 2024, Jun 2024, Nuremberg, Germany
Communication dans un congrès hal-04626451 v1
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Brenda Fosso-Sob , Dominique Planson , Pascal Bevilacqua , Camille Sonneville et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128
Communication dans un congrès hal-04677764 v1

Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs

Joao Oliveira , Regis Meuret , Fabio Coccetti , Roman Boldyrjew-Mast , Clemens Herrmann et al.
13th International Conference on Integrated Power Electronics Systems, CIPS 2024, Mar 2024, Dusseldorf, Germany. pp.Pages 467 - 475
Communication dans un congrès hal-04974583 v1
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes

Dominique Planson , Camille Sonneville , Pascal Bevilacqua , Pierre Brosselard , Mihai Lazar et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592
Communication dans un congrès hal-04680725 v1
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New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices

Joao Oliveira , Bernardo Cougo , Fabio Coccetti , Stephane Azzopardi , Hervé Morel
European Conference on Power Electronics and Applications, Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264294⟩
Communication dans un congrès hal-04316671 v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard , Dominique Planson , D. Tournier , Pascal Bevilacqua , Camille Sonneville et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04222211 v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests

Hassan Hamad , Dominique Tournier , Jean-Michel Reynes , Olivier Perrotin , Régis Meuret et al.
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France
Communication dans un congrès hal-04240602 v1
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Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics

Hervé Morel , Maroun Alam , Pascal Bevilacqua , D. Tournier , Dominique Planson
Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France
Communication dans un congrès hal-04224402 v1
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Application of the Double Source Switching Test to GaN HEMTs

Tamiris Grossl Bade , Maroun Alam , Hervé Morel , Dominique Planson
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩
Communication dans un congrès hal-04225311 v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

Ralph Makhoul , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau , Mihai Lazar et al.
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès hal-04147862 v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viet Phung , M. Lazar et al.
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩
Communication dans un congrès hal-04203163 v1
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V

Adrien Lambert , Hervé Morel , D. Tournier , Dominique Planson , Luong Viêt Phung et al.
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès hal-04150168 v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Ralph Makhoul , Nour Beydoun , Abdelhakim Bourennane , Luong Viêt Phung , Frédéric Richardeau et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès hal-04221605 v1

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

P Vigneshwara Raja , Christophe Raynaud , Besar Asllani , Herve Morel , Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Communication dans un congrès hal-03990840 v1
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling

Florian Rigaud-Minet , Julien Buckley , William Vandendaele , Stéphane Becu , Matthew Charles et al.
SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan
Communication dans un congrès cea-03875079 v1
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Maroun Alam , Hervé Morel , Luong Viêt Phung , Dominique Planson , A. Yvon
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩
Communication dans un congrès hal-03887865 v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Ali Ammar , Mihai Lazar , Bertrand Vergne , Sigo Scharnholz , Luong Viêt Phung et al.
2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩
Communication dans un congrès hal-03856578 v1
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Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design

Tanguy Simon , Mattia Giaccagli , Jean-François Trégouët , Daniele Astolfi , Vincent Andrieu et al.
CDC, Dec 2021, Austin, United States. ⟨10.1109/CDC45484.2021.9682901⟩
Communication dans un congrès hal-03375498 v1
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications

Joao Oliveira , Ali Alhoussen , Florent Loiselay , Hervé Morel , Dominique Planson
EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩
Communication dans un congrès hal-03260519 v1
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Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC Microgrids

Xuefang Lin-Shi , Tanguy Simon , Jean-François Trégouët , Hervé Morel
PEAS, Nov 2021, Shanghai, China. ⟨10.1109/PEAS53589.2021.9628872⟩
Communication dans un congrès hal-03375502 v1
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Modelling and Control of a Power Flow Controller for DC Microgrids

Tanguy Simon , Jean-François Trégouët , Hervé Morel , Xuefang Lin-Shi
EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570493⟩
Communication dans un congrès hal-03360965 v1
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Besar Asllani , Hervé Morel , Pascal Bevilacqua , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩
Communication dans un congrès hal-02945919 v1
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Analysis of Parasitic Elements in Power Modules Based on GaN Components

Joao Oliveira , Hervé Morel , Dominique Planson , Florent Loiselay
PCIM Europe 2020, Jul 2020, Nuremberg, Germany
Communication dans un congrès hal-02945892 v1
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs

Joao Oliveira , Florent Loiselay , Hervé Morel , Dominique Planson
EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩
Communication dans un congrès hal-02945913 v1
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Benefits of GaN transistors and embedding in PCB laminates

Cyril Buttay , Christian Martin , Charles Joubert , Hervé Morel , Bruno Allard et al.
SIA Power Train & Electronics, Jun 2019, Paris, France
Communication dans un congrès hal-02291496 v1
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation

Besar Asllani , Hervé Morel , Dominique Planson , Asad Fayyaz , Alberto Castellazzi
ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩
Communication dans un congrès hal-01984359 v1
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V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate

Besar Asllani , Alberto Castellazzi , Oriol Aviño Salvado , Asad Fayyaz , Hervé Morel et al.
IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩
Communication dans un congrès hal-02099781 v1
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Packaging Solution for SiC Power Modules with a Fail-to-Short Capability

Ilyas Dchar , Cyril Buttay , Hervé Morel
APEC, Mar 2019, Anaheim, Californie, United States. ⟨10.1109/APEC.2019.8722126⟩
Communication dans un congrès hal-02076181 v1
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An investigation of current distribution over four GaN HEMTs in parallel configurations

Thilini Wickramasinghe , Cyril Buttay , Christian Martin , Hervé Morel , Pascal Bevilacqua et al.
The 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Oct 2019, Raleigh, United States. ⟨10.1109/WiPDA46397.2019.8998816⟩
Communication dans un congrès hal-02405882 v1
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A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices

Thilini Wickramasinghe , Bruno Allard , Cyril Buttay , Charles Joubert , Christian Martin et al.
45th IEEE IECON, Oct 2019, Lisbonne, Portugal. ⟨10.1109/IECON.2019.8927490⟩
Communication dans un congrès hal-02405883 v1
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Static characteristics of 5 kV SiC BJTs and Darlington’s

Besar Asllani , Dominique Planson , Hervé Morel , T Lagier
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan
Communication dans un congrès hal-02428513 v1
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Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

Besar Asllani , Dominique Planson , Pascal Bevilacqua , J B Fonder , B Choucoutou et al.
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Communication dans un congrès hal-01985994 v1
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Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin , Mehdi Kanoun , Christophe Raynaud , Hervé Morel
2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩
Communication dans un congrès hal-01942728 v1
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Subthreshold Drain current hysteresis of planar SiC MOSFETs

Besar Asllani , A Castellazzi , Dominique Planson , Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04
Communication dans un congrès hal-02428531 v1
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Microréseaux DC : avantages des réseaux maillés

Hervé Morel , Loïc Michel , Guy Clerc , Pascal Bevilacqua , Mohamed Barara et al.
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès hal-02134229 v1
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Repetitive short-circuit measurement on SiC MOSFET

Quentin Molin , Christophe Raynaud , Mehdi Kanoun , Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès hal-01980834 v1
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High-Voltage SiC-JFET Fabrication and Full Characterization

Besar Asllani , Pascal Bevilacqua , A. Zaoui , G Grosset , Dominique Planson et al.
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5
Communication dans un congrès hal-02428523 v1
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Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors

Hugo Reynes , Cyril Buttay , Hervé Morel
WiPDA, Oct 2017, Albuquerque, United States. ⟨10.1109/WiPDA.2017.8170581⟩
Communication dans un congrès hal-01645029 v1
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Improved Layout of Inverter for EMC Analysis

Ousseynou Yade , Christian Martin , Christian Vollaire , Arnaud Bréard , Marwan Ali et al.
More Electrical Aircraft (MEA), Feb 2017, Bordeaux, France
Communication dans un congrès hal-01715021 v1
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Robustness of SiC MOSFET under avalanche conditions

Ilyas Dchar , Marion Zolkos , Cyril Buttay , Hervé Morel
APEC, Mar 2017, Tampa, FL, United States. pp.2263-2268, ⟨10.1109/APEC.2017.7931015⟩
Communication dans un congrès hal-01535735 v1
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Evaluation of printed-circuit boards materials for high temperature operation

Oriol Aviño Salvado , Wissam Sabbah , Cyril Buttay , Hervé Morel , Pascal Bevilacqua
HiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom
Communication dans un congrès hal-01565131 v1

Étude de la robustesse de l’oxyde de grille pour des applications aéronautiques

Oriol Aviño Salvado , Hervé Morel , Cyril Buttay
JCGE, May 2017, Arras, France. pp.146345
Communication dans un congrès hal-01534712 v1

Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-grids

Mohamed Barara , Hervé Morel , Guy Clerc
International conference on components and systems for DC grids, Mar 2017, Grenoble, France
Communication dans un congrès hal-01793569 v1

Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker

Thi Thuong Huyen Ma , Hamed Yahoui , Fedia Baccar El Boubkari , Hervé Morel , Hoang-Giang Vu et al.
COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique
Communication dans un congrès hal-01639199 v1

An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module

Malorie Hologne , Pascal Bevilacqua , Bruno Allard , Guy Clerc , Hervé Morel et al.
IEMDC, May 2017, Miami, FL, United States. pp.MO263, ⟨10.1109/IEMDC.2017.8002028⟩
Communication dans un congrès hal-01532058 v1
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Analyse de la robustesse des MOSFET SiC pour les applications diode-less

Oriol Aviño Salvado , Cheng Chen , Cyril Buttay , Hervé Morel , Denis Labrousse et al.
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès hal-01361711 v1
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State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications

Layal Ghossein , Florent Morel , Hervé Morel , Piotr Dworakowski
PCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD
Communication dans un congrès hal-01316570 v1

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

T. Nguyen-Bui , Mihai Lazar , Jean-Louis Augé , Hervé Morel , L. Phung et al.
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès hal-02138529 v1
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Robustness of SiC MOSFETs in short-circuit mode

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickaël Petit , Cyril Buttay et al.
PCIM Europe 2015, May 2015, Nuremberg, Germany
Communication dans un congrès hal-01196528 v1
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Considerations for High Temperature Power Electronics

Bruno Allard , Cyril Buttay , Christian Martin , Hervé Morel
18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia
Communication dans un congrès hal-01372146 v1

High temperature operation of SiC transistors

Cyril Buttay , Marwan Ali , Oriol Aviño Salvado , Hervé Morel , Bruno Allard
Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States
Communication dans un congrès hal-01373030 v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès hal-02133686 v1

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Mickael Petit , Cyril Buttay et al.
ESREF, Oct 2015, Toulouse, France. pp.1708-1713
Communication dans un congrès hal-01700463 v1
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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Mihai Lazar , Davy Carole , Christophe Raynaud , Gabriel Ferro , Selsabil Sejil et al.
CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩
Communication dans un congrès hal-01388019 v1
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Estimation des pertes dans les transistors bipolaires SiC

Cheng Chen , Denis Labrousse , Stéphane Lefebvre , Cyril Buttay , Hervé Morel
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès hal-01065220 v1
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Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique

Marc Petit , Seddik Bacha , Xavier Guillaud , Hervé Morel , Dominique Planson et al.
1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France
Communication dans un congrès hal-01065154 v1
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Power Loss Estimation in SiC Power BJTs

Chen Cheng , Denis Labrousse , Stéphane Lefebvre , Hervé Morel , Cyril Buttay et al.
PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p
Communication dans un congrès hal-00997718 v1
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SiC Vertical JFET Pure Diode-Less Inverter Leg

Rémy Ouaida , Xavier Fonteneau , Fabien Dubois , Dominique Bergogne , Florent Morel et al.
APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩
Communication dans un congrès hal-00829343 v1
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Analysis of the SiC VJFET gate punch-through and its dependence with the temperature

Fabien Dubois , Dominique Bergogne , Dominique Tournier , Cyril Buttay , Régis Meuret et al.
EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩
Communication dans un congrès hal-00874655 v1
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Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes

Xavier Fonteneau , Florent Morel , Cyril Buttay , Hervé Morel , Philippe Lahaye
APEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, ⟨10.1109/APEC.2013.6520668⟩
Communication dans un congrès hal-00829353 v1

High Temperature Ageing of Fe-based Nanocrystalline Ribbons

Christian Martin , Rémi Robutel , Cyril Buttay , Fabien Sixdenier , Pascal Bevilacqua et al.
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès hal-00760373 v1
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3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules

Bassem Mouawad , Cyril Buttay , Maher Soueidan , Hervé Morel , Bruno Allard et al.
7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438
Communication dans un congrès hal-00707741 v1
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Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications

Bassem Mouawad , Cyril Buttay , Maher Soueidan , Hervé Morel , Vincent Bley et al.
ISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩
Communication dans un congrès hal-00707820 v1

A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs

Fabien Dubois , Stéphane Sorel , Sonia Dhokkar , Régis Meuret , Dominique Bergogne et al.
ECCE, Sep 2012, Raleigh, United States. pp.3581, ⟨10.1109/ECCE.2012.6342486⟩
Communication dans un congrès hal-00739021 v1

An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

Dominique Bergogne , Fabien Dubois , Christian Martin , Khalil El Falahi , Luong Viet Phung et al.
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès hal-00760366 v1

Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode

Xavier Fonteneau , Florent Morel , Hervé Morel , Philippe Lahaye , Eliana Rondon
ECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩
Communication dans un congrès hal-00739006 v1

Temperature dependence of silicon and silicon carbide power devices: An experimental analysis

Mahbouba Amairi , Sameh Mtimet , Tarek Ben Salah , Hervé Morel
MELECON 2012, Mar 2012, Tunis, Tunisia. pp.97 - 101, ⟨10.1109/MELCON.2012.6196389⟩
Communication dans un congrès hal-00747425 v1
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Report de puce par frittage d'argent - mise en oeuvre et analyse

Amandine Masson , Wissam Sabbah , Raphaël Riva , Cyril Buttay , Stephane Azzopardi et al.
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)
Communication dans un congrès hal-00729156 v1
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Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida , Cyril Buttay , Anh Dung Hoang , Raphaël Riva , Dominique Bergogne et al.
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-00759975 v2
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Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC

Xavier Fonteneau , Florent Morel , Hervé Morel , Philippe Lahaye , Didier Léonard
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24)
Communication dans un congrès hal-00729345 v1

Active protections for normally-on SiC JFETs

Fabien Dubois , Damien Risaletto , Dominique Bergogne , Hervé Morel , Cyril Buttay et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès hal-00629227 v1

A multi-physics model of the VJFET with a lateral channel

Hervé Morel , Youness Hamieh , Dominique Tournier , Rémi Robutel , Fabien Dubois et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès hal-00629220 v1
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High-temperature die-attaches for SiC power devices

Amandine Masson , Cyril Buttay , Hervé Morel , Christophe Raynaud , Stanislas Hascoët et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161
Communication dans un congrès hal-00672602 v1
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Higher temperature power electronics for larger-scale mechatronic integration

Bruno Allard , Cyril Buttay , Dominique Tournier , Rémi Robutel , Jean-François Mogniotte et al.
Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination)
Communication dans un congrès hal-00687139 v1

Integrated common mode capacitors for SiC JFET inverters

Rémi Robutel , Christian Martin , Hervé Morel , Paulo Mattavelli , Dushan Boroyevitch et al.
APEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩
Communication dans un congrès hal-00618665 v1

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

Dominique Tournier , Pierre Brosselard , Christophe Raynaud , Mihai Lazar , Hervé Morel et al.
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès hal-00661500 v1

Thermal Requirements of SiC Power Devices

Cyril Buttay , Christophe Raynaud , Hervé Morel , Gabriel Civrac , Marie-Laure Locatelli et al.
6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Communication dans un congrès hal-00672631 v1

High-temperature behavior of SiC power diodes

Cyril Buttay , Christophe Raynaud , Hervé Morel , Mihai Lazar , Gabriel Civrac et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès hal-00629225 v1

Ultrafast safety system to turn-off normally on SiC JFETs

Fabien Dubois , Dominique Bergogne , Damien Risaletto , Rémi Perrin , Abderrahime Zaoui et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès hal-00629232 v1
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization

Cyril Buttay , Amandine Masson , Jianfeng Li , Mark C. Johnson , Mihai Lazar et al.
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès hal-00672619 v1

Caractérisation des non-linéarités dans les condensateurs céramiques haute température

Rémi Robutel , Christian Martin , Cyril Buttay , Hervé Morel , Régis Meuret
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618657 v1

High Temperature Inverter for Airborne Application

Fabien Dubois , Dominique Bergogne , Damien Risaletto , Rémi Robutel , Hervé Morel et al.
HiTEC 2010, May 2010, Albuquerque, United States. pp.000222
Communication dans un congrès hal-00485279 v1

Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)

Dominique Bergogne , Olivier Berry , Sonia Dhokkar , Youness Hamieh , Farid Meibody-Tabar et al.
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618715 v1

Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter

Rémi Robutel , Christian Martin , Hervé Morel , Cyril Buttay , Dominique Bergogne et al.
HiTEC 2010, May 2010, Albuquerque, United States. pp.000236
Communication dans un congrès hal-00485284 v1

Normally-On SiC JFETs in power converters: Gate driver and safe operation

Dominique Bergogne , Damien Risaletto , Fabien Dubois , Asif Hammoud , Hervé Morel et al.
6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD
Communication dans un congrès hal-00629214 v1

Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance

Damien Risaletto , Dominique Bergogne , Fabien Dubois , Hervé Morel , Cédric Ruby et al.
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès hal-00618693 v1

SIC inverter optimization for high temperature applications

Régis Meuret , Olivier Berry , Fabien Dubois , Youness Hamieh , Stéphane Raël et al.
27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France
Communication dans un congrès hal-02937166 v1
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Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages

Dominique Bergogne , Asif Hammoud , Dominique Tournier , Cyril Buttay , Youness Amieh et al.
EPE, Sep 2009, Barcelone, France. pp.1--8
Communication dans un congrès hal-00446059 v1
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State of the art of High Temperature Power Electronics

Cyril Buttay , Dominique Planson , Bruno Allard , Dominique Bergogne , Pascal Bevilacqua et al.
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès hal-00413349 v1

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Nicolas Dheilly , Dominique Planson , Pierre Brosselard , Hassan Jawad , Pascal Bevilacqua et al.
ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩
Communication dans un congrès hal-00391369 v1

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Dominique Tournier , Pascal Bevilacqua , Dominique Planson , Hervé Morel , Pierre Brosselard et al.
CSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩
Communication dans un congrès hal-00391376 v1
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Towards an Airborne High Temperature SiC Inverter

Dominique Bergogne , Herve Morel , Dominique Planson , Dominique Tournier , Pascal Bevilacqua et al.
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, Rhodes, France. pp.3178-3183, ⟨10.1109/PESC.2008.4592442⟩
Communication dans un congrès hal-00467659 v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics

Dominique Planson , Dominique Tournier , Pascal Bevilacqua , Nicolas Dheilly , Hervé Morel et al.
13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩
Communication dans un congrès hal-00373016 v1

High temperature characterization of SiC-JFET and modelling

Rami Mousa , Dominique Planson , Hervé Morel , Christophe Raynaud
ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417501⟩
Communication dans un congrès hal-00369458 v1

Electrical characterization of 5kV SiC bipolar diodes in switching transient regime

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Sami Ghedira et al.
ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩
Communication dans un congrès hal-00369457 v1

Current limiting with SiC JFET structures

Dominique Tournier , Dominique Bergogne , Asif Hamoud , Dominique Planson , Rami Mousa et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5
Communication dans un congrès hal-00373046 v1

VHDL-AMS model of IGBT for electro-thermal simulation

Their Ibrahim , Bruno Allard , Hervé Morel , Sabrine M'Rad
ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417461⟩
Communication dans un congrès hal-00369426 v1

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Dominique Bergogne , Hervé Morel , Dominique Tournier , Bruno Allard , Dominique Planson et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès hal-00372982 v1

Modeling and high temperature characterization of SiC-JFET

Rami Mousa , Dominique Planson , Hervé Morel , Bruno Allard , Christophe Raynaud
IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩
Communication dans un congrès hal-00369420 v1
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P

M Soueidan , Mihai Lazar , D. Tournier , Dominique Planson , Christophe Raynaud et al.
4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Communication dans un congrès hal-04606381 v1
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Composant de protection série en SiC 450A de forte densité de puissance

D. Tournier , Pascal Bevilacqua , Hervé Morel , Dominique Planson , Pierre Brosselard et al.
12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France
Communication dans un congrès hal-04624757 v1
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Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications

Michel Mermet-Guyennet , Hervé Morel , Dominique Planson , Henri Schneider , Jocelyn Achard
12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France
Communication dans un congrès hal-04606571 v1

SiC JFET for high temperature power switches

Dominique Bergogne , Dominique Tournier , Rami Mousa , Mohsen Shafiee Khoor , Dominique Planson et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4
Communication dans un congrès hal-00373058 v1
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New Applications in Power Electronics Based on SiC Power Devices

Hervé Morel , Dominique Bergogne , Dominique Planson , Bruno Allard , Régis Meuret
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩
Communication dans un congrès hal-02958610 v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies

Tarek Ben Salah , Damien Risaletto , Christophe Raynaud , Kamel Besbes , Dominique Bergogne et al.
ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩
Communication dans un congrès hal-02958620 v1
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High temperature operating converter

Dominique Bergogne , Pascal Bevilacqua , Dominique Planson , Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. pp.201-204
Communication dans un congrès hal-00413394 v1

Les enjeux de la haute température

Christian Martin , Hervé Morel , Dominique Bergogne , Bruno Allard
11ème EPF, Jul 2006, Grenoble, France
Communication dans un congrès hal-00412423 v1

Analytic thermal modelling of power electronic components: The Diffusive Representation

Sabrine M'Rad , Bruno Allard , Anis Ammous , Nouri Massmoudi , Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.)
Communication dans un congrès hal-00413392 v1
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Onduleur à JFET sans diode de roue libre externe

Dominique Bergogne , Pierre Lefranc , D. Tournier , Pascal Bevilacqua , Dominique Planson et al.
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès hal-04618123 v1

Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMS

François Pêcheux , Bruno Allard , Christophe Lallement , Alain Vachoux , Hervé Morel
ICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155
Communication dans un congrès hal-01486590 v1

300 °C operating junction temperature inverter leg investigations

Dominique Bergogne , Pascal Bevilacqua , Sabrine M'Rad , Dominique Planson , Hervé Morel et al.
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès hal-00413402 v1
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Bond Graph Modeling of Current Diffusion in Magnetic Cores

Hervé Morel , Bruno Allard , Sabrine M'Rad , Cyril Buttay , Kaiçar Ammous et al.
ICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91
Communication dans un congrès hal-00412621 v1
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Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions

Cyril Buttay , Olivier Brevet , Bruno Allard , Dominique Bergogne , Hervé Morel
EPE, Sep 2005, Dresden, Germany. ⟨10.1109/EPE.2005.219271⟩
Communication dans un congrès hal-00138894 v1

Fast over-current protection of high power IGBT modules

Pierre Lefranc , Dominique Bergogne , Hervé Morel , Bruno Allard , Jean-François Roche
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès hal-00413400 v1

Power converter's optimisation, analysis and design

Hassan Helali , Dominique Bergogne , Hervé Morel , Bruno Allard , Pascal Bevilacqua
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès hal-00413401 v1
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A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge

Cyril Buttay , Dominique Bergogne , Hervé Morel , Bruno Allard , René Ehlinger et al.
EPE, Sep 2003, Toulouse, France. pp.1-10
Communication dans un congrès hal-00413309 v1
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Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge

Cyril Buttay , Dominique Bergogne , Hervé Morel , Bruno Allard , René Ehlinger et al.
IEEE PESC, Jun 2003, Accapulco, Mexico. pp.901 - 906, ⟨10.1109/PESC.2003.1218175⟩
Communication dans un congrès hal-00413325 v1
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components

Dominique Planson , S. Margenat , F. Nallet , Hervé Morel , Marie-Laure Locatelli et al.
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩
Communication dans un congrès hal-04386919 v1