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Repetitive Short-circuits on 650 V GaN
Adrien Lambert
,
Hervé Morel
,
Dominique Planson
,
Luong Viêt Phung
,
Dominique Tournier
et al.
PCIM Europe 2024, Jun 2024, Nuremberg, Germany
Communication dans un congrès
hal-04626451
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|
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Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor
Pierre Brosselard
,
Brenda Fosso-Sob
,
Dominique Planson
,
Pascal Bevilacqua
,
Camille Sonneville
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128
Communication dans un congrès
hal-04677764
v1
|
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Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs
Joao Oliveira
,
Regis Meuret
,
Fabio Coccetti
,
Roman Boldyrjew-Mast
,
Clemens Herrmann
et al.
13th International Conference on Integrated Power Electronics Systems, CIPS 2024, Mar 2024, Dusseldorf, Germany. pp.Pages 467 - 475
Communication dans un congrès
hal-04974583
v1
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Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes
Dominique Planson
,
Camille Sonneville
,
Pascal Bevilacqua
,
Pierre Brosselard
,
Mihai Lazar
et al.
International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592
Communication dans un congrès
hal-04680725
v1
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New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices
Joao Oliveira
,
Bernardo Cougo
,
Fabio Coccetti
,
Stephane Azzopardi
,
Hervé Morel
Communication dans un congrès
hal-04316671
v1
|
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Pierre Brosselard
,
Dominique Planson
,
D. Tournier
,
Pascal Bevilacqua
,
Camille Sonneville
et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04222211
v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests
Hassan Hamad
,
Dominique Tournier
,
Jean-Michel Reynes
,
Olivier Perrotin
,
Régis Meuret
et al.
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France
Communication dans un congrès
hal-04240602
v1
|
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Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics
Hervé Morel
,
Maroun Alam
,
Pascal Bevilacqua
,
D. Tournier
,
Dominique Planson
Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France
Communication dans un congrès
hal-04224402
v1
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Application of the Double Source Switching Test to GaN HEMTs
Tamiris Grossl Bade
,
Maroun Alam
,
Hervé Morel
,
Dominique Planson
Communication dans un congrès
hal-04225311
v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
Ralph Makhoul
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
,
Mihai Lazar
et al.
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
hal-04147862
v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viet Phung
,
M. Lazar
et al.
Communication dans un congrès
hal-04203163
v1
|
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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V
Adrien Lambert
,
Hervé Morel
,
D. Tournier
,
Dominique Planson
,
Luong Viêt Phung
et al.
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04150168
v1
|
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
et al.
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04221605
v1
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Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes
P Vigneshwara Raja
,
Christophe Raynaud
,
Besar Asllani
,
Herve Morel
,
Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Communication dans un congrès
hal-03990840
v1
|
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling
Florian Rigaud-Minet
,
Julien Buckley
,
William Vandendaele
,
Stéphane Becu
,
Matthew Charles
et al.
SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan
Communication dans un congrès
cea-03875079
v1
|
|
Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses
Maroun Alam
,
Hervé Morel
,
Luong Viêt Phung
,
Dominique Planson
,
A. Yvon
Communication dans un congrès
hal-03887865
v1
|
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT
Ali Ammar
,
Mihai Lazar
,
Bertrand Vergne
,
Sigo Scharnholz
,
Luong Viêt Phung
et al.
Communication dans un congrès
hal-03856578
v1
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Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design
Tanguy Simon
,
Mattia Giaccagli
,
Jean-François Trégouët
,
Daniele Astolfi
,
Vincent Andrieu
et al.
Communication dans un congrès
hal-03375498
v1
|
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications
Joao Oliveira
,
Ali Alhoussen
,
Florent Loiselay
,
Hervé Morel
,
Dominique Planson
Communication dans un congrès
hal-03260519
v1
|
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Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC Microgrids
Xuefang Lin-Shi
,
Tanguy Simon
,
Jean-François Trégouët
,
Hervé Morel
Communication dans un congrès
hal-03375502
v1
|
|
Modelling and Control of a Power Flow Controller for DC Microgrids
Tanguy Simon
,
Jean-François Trégouët
,
Hervé Morel
,
Xuefang Lin-Shi
Communication dans un congrès
hal-03360965
v1
|
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Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor
Besar Asllani
,
Hervé Morel
,
Pascal Bevilacqua
,
Dominique Planson
Communication dans un congrès
hal-02945919
v1
|
|
Analysis of Parasitic Elements in Power Modules Based on GaN Components
Joao Oliveira
,
Hervé Morel
,
Dominique Planson
,
Florent Loiselay
PCIM Europe 2020, Jul 2020, Nuremberg, Germany
Communication dans un congrès
hal-02945892
v1
|
|
Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs
Joao Oliveira
,
Florent Loiselay
,
Hervé Morel
,
Dominique Planson
Communication dans un congrès
hal-02945913
v1
|
|
Benefits of GaN transistors and embedding in PCB laminates
Cyril Buttay
,
Christian Martin
,
Charles Joubert
,
Hervé Morel
,
Bruno Allard
et al.
SIA Power Train & Electronics, Jun 2019, Paris, France
Communication dans un congrès
hal-02291496
v1
|
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SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation
Besar Asllani
,
Hervé Morel
,
Dominique Planson
,
Asad Fayyaz
,
Alberto Castellazzi
Communication dans un congrès
hal-01984359
v1
|
|
V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate
Besar Asllani
,
Alberto Castellazzi
,
Oriol Aviño Salvado
,
Asad Fayyaz
,
Hervé Morel
et al.
Communication dans un congrès
hal-02099781
v1
|
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Packaging Solution for SiC Power Modules with a Fail-to-Short Capability
Ilyas Dchar
,
Cyril Buttay
,
Hervé Morel
Communication dans un congrès
hal-02076181
v1
|
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An investigation of current distribution over four GaN HEMTs in parallel configurations
Thilini Wickramasinghe
,
Cyril Buttay
,
Christian Martin
,
Hervé Morel
,
Pascal Bevilacqua
et al.
Communication dans un congrès
hal-02405882
v1
|
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A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices
Thilini Wickramasinghe
,
Bruno Allard
,
Cyril Buttay
,
Charles Joubert
,
Christian Martin
et al.
Communication dans un congrès
hal-02405883
v1
|
|
Static characteristics of 5 kV SiC BJTs and Darlington’s
Besar Asllani
,
Dominique Planson
,
Hervé Morel
,
T Lagier
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan
Communication dans un congrès
hal-02428513
v1
|
|
Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes
Besar Asllani
,
Dominique Planson
,
Pascal Bevilacqua
,
J B Fonder
,
B Choucoutou
et al.
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Communication dans un congrès
hal-01985994
v1
|
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Robustness study of 1700 V 45 mΩ SiC MOSFETs
Quentin Molin
,
Mehdi Kanoun
,
Christophe Raynaud
,
Hervé Morel
Communication dans un congrès
hal-01942728
v1
|
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Subthreshold Drain current hysteresis of planar SiC MOSFETs
Besar Asllani
,
A Castellazzi
,
Dominique Planson
,
Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04
Communication dans un congrès
hal-02428531
v1
|
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Microréseaux DC : avantages des réseaux maillés
Hervé Morel
,
Loïc Michel
,
Guy Clerc
,
Pascal Bevilacqua
,
Mohamed Barara
et al.
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02134229
v1
|
|
Repetitive short-circuit measurement on SiC MOSFET
Quentin Molin
,
Christophe Raynaud
,
Mehdi Kanoun
,
Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
hal-01980834
v1
|
|
High-Voltage SiC-JFET Fabrication and Full Characterization
Besar Asllani
,
Pascal Bevilacqua
,
A. Zaoui
,
G Grosset
,
Dominique Planson
et al.
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5
Communication dans un congrès
hal-02428523
v1
|
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Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors
Hugo Reynes
,
Cyril Buttay
,
Hervé Morel
Communication dans un congrès
hal-01645029
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Improved Layout of Inverter for EMC Analysis
Ousseynou Yade
,
Christian Martin
,
Christian Vollaire
,
Arnaud Bréard
,
Marwan Ali
et al.
More Electrical Aircraft (MEA), Feb 2017, Bordeaux, France
Communication dans un congrès
hal-01715021
v1
|
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Robustness of SiC MOSFET under avalanche conditions
Ilyas Dchar
,
Marion Zolkos
,
Cyril Buttay
,
Hervé Morel
Communication dans un congrès
hal-01535735
v1
|
|
Evaluation of printed-circuit boards materials for high temperature operation
Oriol Aviño Salvado
,
Wissam Sabbah
,
Cyril Buttay
,
Hervé Morel
,
Pascal Bevilacqua
HiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom
Communication dans un congrès
hal-01565131
v1
|
|
Étude de la robustesse de l’oxyde de grille pour des applications aéronautiques
Oriol Aviño Salvado
,
Hervé Morel
,
Cyril Buttay
JCGE, May 2017, Arras, France. pp.146345
Communication dans un congrès
hal-01534712
v1
|
|
Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-grids
Mohamed Barara
,
Hervé Morel
,
Guy Clerc
International conference on components and systems for DC grids, Mar 2017, Grenoble, France
Communication dans un congrès
hal-01793569
v1
|
|
Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker
Thi Thuong Huyen Ma
,
Hamed Yahoui
,
Fedia Baccar El Boubkari
,
Hervé Morel
,
Hoang-Giang Vu
et al.
COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique
Communication dans un congrès
hal-01639199
v1
|
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An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module
Malorie Hologne
,
Pascal Bevilacqua
,
Bruno Allard
,
Guy Clerc
,
Hervé Morel
et al.
Communication dans un congrès
hal-01532058
v1
|
|
Analyse de la robustesse des MOSFET SiC pour les applications diode-less
Oriol Aviño Salvado
,
Cheng Chen
,
Cyril Buttay
,
Hervé Morel
,
Denis Labrousse
et al.
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361711
v1
|
|
State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications
Layal Ghossein
,
Florent Morel
,
Hervé Morel
,
Piotr Dworakowski
PCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD
Communication dans un congrès
hal-01316570
v1
|
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Vertical termination filled with adequate dielectric for SiC devices in HVDC applications
T. Nguyen-Bui
,
Mihai Lazar
,
Jean-Louis Augé
,
Hervé Morel
,
L. Phung
et al.
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138529
v1
|
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Robustness of SiC MOSFETs in short-circuit mode
Cheng Chen
,
Denis Labrousse
,
Stéphane Lefebvre
,
Mickaël Petit
,
Cyril Buttay
et al.
PCIM Europe 2015, May 2015, Nuremberg, Germany
Communication dans un congrès
hal-01196528
v1
|
|
Considerations for High Temperature Power Electronics
Bruno Allard
,
Cyril Buttay
,
Christian Martin
,
Hervé Morel
18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia
Communication dans un congrès
hal-01372146
v1
|
|
High temperature operation of SiC transistors
Cyril Buttay
,
Marwan Ali
,
Oriol Aviño Salvado
,
Hervé Morel
,
Bruno Allard
Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States
Communication dans un congrès
hal-01373030
v1
|
|
4H-SiC P-N junctions realized by VLS for JFET lateral structures
Selsabil Sejil
,
Farah Laariedh
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
hal-02133686
v1
|
|
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs
Cheng Chen
,
Denis Labrousse
,
Stéphane Lefebvre
,
Mickael Petit
,
Cyril Buttay
et al.
ESREF, Oct 2015, Toulouse, France. pp.1708-1713
Communication dans un congrès
hal-01700463
v1
|
|
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices
Mihai Lazar
,
Davy Carole
,
Christophe Raynaud
,
Gabriel Ferro
,
Selsabil Sejil
et al.
Communication dans un congrès
hal-01388019
v1
|
|
Estimation des pertes dans les transistors bipolaires SiC
Cheng Chen
,
Denis Labrousse
,
Stéphane Lefebvre
,
Cyril Buttay
,
Hervé Morel
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065220
v1
|
|
Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique
Marc Petit
,
Seddik Bacha
,
Xavier Guillaud
,
Hervé Morel
,
Dominique Planson
et al.
1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065154
v1
|
|
Power Loss Estimation in SiC Power BJTs
Chen Cheng
,
Denis Labrousse
,
Stéphane Lefebvre
,
Hervé Morel
,
Cyril Buttay
et al.
PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p
Communication dans un congrès
hal-00997718
v1
|
|
SiC Vertical JFET Pure Diode-Less Inverter Leg
Rémy Ouaida
,
Xavier Fonteneau
,
Fabien Dubois
,
Dominique Bergogne
,
Florent Morel
et al.
Communication dans un congrès
hal-00829343
v1
|
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Analysis of the SiC VJFET gate punch-through and its dependence with the temperature
Fabien Dubois
,
Dominique Bergogne
,
Dominique Tournier
,
Cyril Buttay
,
Régis Meuret
et al.
Communication dans un congrès
hal-00874655
v1
|
|
Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes
Xavier Fonteneau
,
Florent Morel
,
Cyril Buttay
,
Hervé Morel
,
Philippe Lahaye
Communication dans un congrès
hal-00829353
v1
|
|
High Temperature Ageing of Fe-based Nanocrystalline Ribbons
Christian Martin
,
Rémi Robutel
,
Cyril Buttay
,
Fabien Sixdenier
,
Pascal Bevilacqua
et al.
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès
hal-00760373
v1
|
|
3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules
Bassem Mouawad
,
Cyril Buttay
,
Maher Soueidan
,
Hervé Morel
,
Bruno Allard
et al.
7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438
Communication dans un congrès
hal-00707741
v1
|
|
Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications
Bassem Mouawad
,
Cyril Buttay
,
Maher Soueidan
,
Hervé Morel
,
Vincent Bley
et al.
Communication dans un congrès
hal-00707820
v1
|
|
A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs
Fabien Dubois
,
Stéphane Sorel
,
Sonia Dhokkar
,
Régis Meuret
,
Dominique Bergogne
et al.
Communication dans un congrès
hal-00739021
v1
|
|
An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators
Dominique Bergogne
,
Fabien Dubois
,
Christian Martin
,
Khalil El Falahi
,
Luong Viet Phung
et al.
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès
hal-00760366
v1
|
|
Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode
Xavier Fonteneau
,
Florent Morel
,
Hervé Morel
,
Philippe Lahaye
,
Eliana Rondon
Communication dans un congrès
hal-00739006
v1
|
|
Temperature dependence of silicon and silicon carbide power devices: An experimental analysis
Mahbouba Amairi
,
Sameh Mtimet
,
Tarek Ben Salah
,
Hervé Morel
Communication dans un congrès
hal-00747425
v1
|
|
Report de puce par frittage d'argent - mise en oeuvre et analyse
Amandine Masson
,
Wissam Sabbah
,
Raphaël Riva
,
Cyril Buttay
,
Stephane Azzopardi
et al.
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)
Communication dans un congrès
hal-00729156
v1
|
|
Thermal Runaway Robustness of SiC VJFETs
Rémy Ouaida
,
Cyril Buttay
,
Anh Dung Hoang
,
Raphaël Riva
,
Dominique Bergogne
et al.
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-00759975
v2
|
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Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC
Xavier Fonteneau
,
Florent Morel
,
Hervé Morel
,
Philippe Lahaye
,
Didier Léonard
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24)
Communication dans un congrès
hal-00729345
v1
|
|
Active protections for normally-on SiC JFETs
Fabien Dubois
,
Damien Risaletto
,
Dominique Bergogne
,
Hervé Morel
,
Cyril Buttay
et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629227
v1
|
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A multi-physics model of the VJFET with a lateral channel
Hervé Morel
,
Youness Hamieh
,
Dominique Tournier
,
Rémi Robutel
,
Fabien Dubois
et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629220
v1
|
|
High-temperature die-attaches for SiC power devices
Amandine Masson
,
Cyril Buttay
,
Hervé Morel
,
Christophe Raynaud
,
Stanislas Hascoët
et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161
Communication dans un congrès
hal-00672602
v1
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Higher temperature power electronics for larger-scale mechatronic integration
Bruno Allard
,
Cyril Buttay
,
Dominique Tournier
,
Rémi Robutel
,
Jean-François Mogniotte
et al.
Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination)
Communication dans un congrès
hal-00687139
v1
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Integrated common mode capacitors for SiC JFET inverters
Rémi Robutel
,
Christian Martin
,
Hervé Morel
,
Paulo Mattavelli
,
Dushan Boroyevitch
et al.
Communication dans un congrès
hal-00618665
v1
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|
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications
Dominique Tournier
,
Pierre Brosselard
,
Christophe Raynaud
,
Mihai Lazar
,
Hervé Morel
et al.
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
hal-00661500
v1
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Thermal Requirements of SiC Power Devices
Cyril Buttay
,
Christophe Raynaud
,
Hervé Morel
,
Gabriel Civrac
,
Marie-Laure Locatelli
et al.
6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Communication dans un congrès
hal-00672631
v1
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High-temperature behavior of SiC power diodes
Cyril Buttay
,
Christophe Raynaud
,
Hervé Morel
,
Mihai Lazar
,
Gabriel Civrac
et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629225
v1
|
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Ultrafast safety system to turn-off normally on SiC JFETs
Fabien Dubois
,
Dominique Bergogne
,
Damien Risaletto
,
Rémi Perrin
,
Abderrahime Zaoui
et al.
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629232
v1
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Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
Cyril Buttay
,
Amandine Masson
,
Jianfeng Li
,
Mark C. Johnson
,
Mihai Lazar
et al.
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès
hal-00672619
v1
|
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Caractérisation des non-linéarités dans les condensateurs céramiques haute température
Rémi Robutel
,
Christian Martin
,
Cyril Buttay
,
Hervé Morel
,
Régis Meuret
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618657
v1
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High Temperature Inverter for Airborne Application
Fabien Dubois
,
Dominique Bergogne
,
Damien Risaletto
,
Rémi Robutel
,
Hervé Morel
et al.
HiTEC 2010, May 2010, Albuquerque, United States. pp.000222
Communication dans un congrès
hal-00485279
v1
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Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)
Dominique Bergogne
,
Olivier Berry
,
Sonia Dhokkar
,
Youness Hamieh
,
Farid Meibody-Tabar
et al.
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618715
v1
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Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter
Rémi Robutel
,
Christian Martin
,
Hervé Morel
,
Cyril Buttay
,
Dominique Bergogne
et al.
HiTEC 2010, May 2010, Albuquerque, United States. pp.000236
Communication dans un congrès
hal-00485284
v1
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Normally-On SiC JFETs in power converters: Gate driver and safe operation
Dominique Bergogne
,
Damien Risaletto
,
Fabien Dubois
,
Asif Hammoud
,
Hervé Morel
et al.
6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD
Communication dans un congrès
hal-00629214
v1
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Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance
Damien Risaletto
,
Dominique Bergogne
,
Fabien Dubois
,
Hervé Morel
,
Cédric Ruby
et al.
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618693
v1
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SIC inverter optimization for high temperature applications
Régis Meuret
,
Olivier Berry
,
Fabien Dubois
,
Youness Hamieh
,
Stéphane Raël
et al.
27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France
Communication dans un congrès
hal-02937166
v1
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Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages
Dominique Bergogne
,
Asif Hammoud
,
Dominique Tournier
,
Cyril Buttay
,
Youness Amieh
et al.
EPE, Sep 2009, Barcelone, France. pp.1--8
Communication dans un congrès
hal-00446059
v1
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State of the art of High Temperature Power Electronics
Cyril Buttay
,
Dominique Planson
,
Bruno Allard
,
Dominique Bergogne
,
Pascal Bevilacqua
et al.
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès
hal-00413349
v1
|
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique
Nicolas Dheilly
,
Dominique Planson
,
Pierre Brosselard
,
Hassan Jawad
,
Pascal Bevilacqua
et al.
Communication dans un congrès
hal-00391369
v1
|
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High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
Dominique Tournier
,
Pascal Bevilacqua
,
Dominique Planson
,
Hervé Morel
,
Pierre Brosselard
et al.
Communication dans un congrès
hal-00391376
v1
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Towards an Airborne High Temperature SiC Inverter
Dominique Bergogne
,
Herve Morel
,
Dominique Planson
,
Dominique Tournier
,
Pascal Bevilacqua
et al.
Communication dans un congrès
hal-00467659
v1
|
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SiC Power Semiconductor Devices for new Applications in Power Electronics
Dominique Planson
,
Dominique Tournier
,
Pascal Bevilacqua
,
Nicolas Dheilly
,
Hervé Morel
et al.
Communication dans un congrès
hal-00373016
v1
|
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High temperature characterization of SiC-JFET and modelling
Rami Mousa
,
Dominique Planson
,
Hervé Morel
,
Christophe Raynaud
Communication dans un congrès
hal-00369458
v1
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Electrical characterization of 5kV SiC bipolar diodes in switching transient regime
Tarek Ben Salah
,
Damien Risaletto
,
Christophe Raynaud
,
Kamel Besbes
,
Sami Ghedira
et al.
Communication dans un congrès
hal-00369457
v1
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Current limiting with SiC JFET structures
Dominique Tournier
,
Dominique Bergogne
,
Asif Hamoud
,
Dominique Planson
,
Rami Mousa
et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5
Communication dans un congrès
hal-00373046
v1
|
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VHDL-AMS model of IGBT for electro-thermal simulation
Their Ibrahim
,
Bruno Allard
,
Hervé Morel
,
Sabrine M'Rad
Communication dans un congrès
hal-00369426
v1
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters
Dominique Bergogne
,
Hervé Morel
,
Dominique Tournier
,
Bruno Allard
,
Dominique Planson
et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
hal-00372982
v1
|
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Modeling and high temperature characterization of SiC-JFET
Rami Mousa
,
Dominique Planson
,
Hervé Morel
,
Bruno Allard
,
Christophe Raynaud
Communication dans un congrès
hal-00369420
v1
|
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Contact ohmique de faible résistivité sur SiC-4H dopé type-P
M Soueidan
,
Mihai Lazar
,
D. Tournier
,
Dominique Planson
,
Christophe Raynaud
et al.
4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France
Communication dans un congrès
hal-04606381
v1
|
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Composant de protection série en SiC 450A de forte densité de puissance
D. Tournier
,
Pascal Bevilacqua
,
Hervé Morel
,
Dominique Planson
,
Pierre Brosselard
et al.
12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France
Communication dans un congrès
hal-04624757
v1
|
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Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications
Michel Mermet-Guyennet
,
Hervé Morel
,
Dominique Planson
,
Henri Schneider
,
Jocelyn Achard
12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France
Communication dans un congrès
hal-04606571
v1
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SiC JFET for high temperature power switches
Dominique Bergogne
,
Dominique Tournier
,
Rami Mousa
,
Mohsen Shafiee Khoor
,
Dominique Planson
et al.
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4
Communication dans un congrès
hal-00373058
v1
|
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New Applications in Power Electronics Based on SiC Power Devices
Hervé Morel
,
Dominique Bergogne
,
Dominique Planson
,
Bruno Allard
,
Régis Meuret
Communication dans un congrès
hal-02958610
v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies
Tarek Ben Salah
,
Damien Risaletto
,
Christophe Raynaud
,
Kamel Besbes
,
Dominique Bergogne
et al.
Communication dans un congrès
hal-02958620
v1
|
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High temperature operating converter
Dominique Bergogne
,
Pascal Bevilacqua
,
Dominique Planson
,
Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. pp.201-204
Communication dans un congrès
hal-00413394
v1
|
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Les enjeux de la haute température
Christian Martin
,
Hervé Morel
,
Dominique Bergogne
,
Bruno Allard
11ème EPF, Jul 2006, Grenoble, France
Communication dans un congrès
hal-00412423
v1
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Analytic thermal modelling of power electronic components: The Diffusive Representation
Sabrine M'Rad
,
Bruno Allard
,
Anis Ammous
,
Nouri Massmoudi
,
Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.)
Communication dans un congrès
hal-00413392
v1
|
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Onduleur à JFET sans diode de roue libre externe
Dominique Bergogne
,
Pierre Lefranc
,
D. Tournier
,
Pascal Bevilacqua
,
Dominique Planson
et al.
11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France
Communication dans un congrès
hal-04618123
v1
|
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Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMS
François Pêcheux
,
Bruno Allard
,
Christophe Lallement
,
Alain Vachoux
,
Hervé Morel
ICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155
Communication dans un congrès
hal-01486590
v1
|
|
300 °C operating junction temperature inverter leg investigations
Dominique Bergogne
,
Pascal Bevilacqua
,
Sabrine M'Rad
,
Dominique Planson
,
Hervé Morel
et al.
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413402
v1
|
|
Bond Graph Modeling of Current Diffusion in Magnetic Cores
Hervé Morel
,
Bruno Allard
,
Sabrine M'Rad
,
Cyril Buttay
,
Kaiçar Ammous
et al.
ICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91
Communication dans un congrès
hal-00412621
v1
|
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Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions
Cyril Buttay
,
Olivier Brevet
,
Bruno Allard
,
Dominique Bergogne
,
Hervé Morel
Communication dans un congrès
hal-00138894
v1
|
|
Fast over-current protection of high power IGBT modules
Pierre Lefranc
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
Jean-François Roche
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413400
v1
|
|
Power converter's optimisation, analysis and design
Hassan Helali
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
Pascal Bevilacqua
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413401
v1
|
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A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge
Cyril Buttay
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
René Ehlinger
et al.
EPE, Sep 2003, Toulouse, France. pp.1-10
Communication dans un congrès
hal-00413309
v1
|
|
Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge
Cyril Buttay
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
René Ehlinger
et al.
Communication dans un congrès
hal-00413325
v1
|
|
Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components
Dominique Planson
,
S. Margenat
,
F. Nallet
,
Hervé Morel
,
Marie-Laure Locatelli
et al.
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩
Communication dans un congrès
hal-04386919
v1
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