Hervé Morel

Présentation

Publications

Article dans une revue (100)

Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching Thomas Vadebout,Pascal Bevilacqua,Valeria Rustichelli,Maroun Alam,Laurence Allirandet al. Microelectronics Reliability, 2026, 178, pp.116024. ⟨10.1016/j.microrel.2026.116024⟩ Article dans une revue hal-05507060v1
Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Brenda Fosso-Sob,Dominique Planson,Pascal Bevilacqua,Camille Sonnevilleet al. Key Engineering Materials, 2025, 1021, pp.1-6. ⟨10.4028/p-T0Vjdb⟩ Article dans une revue hal-05293324v1
Matching Physical and Electrical Measurements (OBIC) to Simulation (FEM) on High Voltage Bipolar Diodes Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Pierre Brosselard,Mihai Lazaret al. Key Engineering Materials, 2025, 1023, pp.1-6. ⟨10.4028/p-0v5tyE⟩ Article dans une revue hal-05293312v1
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Camille Sonnevilleet al. Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩ Article dans une revue hal-04677726v1
Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs Joao Oliveira,Jean-Michel Reynes,Hervé Morel,Pascal Frey,Olivier Perrotinet al. Energies, 2024, 17, pp.5476. ⟨10.3390/en17215476⟩ Article dans une revue hal-04843993v1
Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results Dominique Planson,Dominique Tournier,Camille Sonneville,Pascal Bevilacqua,Luong Viet Phunget al. Materials Science in Semiconductor Processing, 2024, 178, pp.108444. ⟨10.1016/j.mssp.2024.108444⟩ Article dans une revue hal-04664143v1
Design, Fabrication and Characterization of 10 kV 4H-SiC BJT for the Phototransistor Target Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. Romanian Journal of Information Science and Technology, 2023, 26 (2), pp.193-204. ⟨10.59277/ROMJIST.2023.2.06⟩ Article dans une revue hal-04276812v1
First results on 1.2 kV SiC MOSFET body diode robustness tests Hassan Hamad,Dominique Tournier,Jean-Michel Reynes,Olivier Perrotin,David Trémouilleset al. Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩ Article dans une revue hal-04282544v1
Failure Degradation Similarities on Power SiC MOSFET Devices Submitted to Short-Circuit Stress and Accelerated Switching Conditions Joao Oliveira,Pascal Frey,Hervé Morel,Jean-Michel Reynes,Jérémie Burkyet al. Microelectronics Reliability, 2023, 148, pp.115166. ⟨10.1016/j.microrel.2023.115166⟩ Article dans une revue hal-04316701v1
Robust Regulation of a Power Flow Controller via Nonlinear Integral Action Tanguy Simon,Mattia Giaccagli,Jean-François Trégouët,Daniele Astolfi,Vincent Andrieuet al. IEEE Transactions on Control Systems Technology, 2023, 31 (4), pp.1636 - 1648. ⟨10.1109/TCST.2023.3236474⟩ Article dans une revue hal-03920401v1
Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes P. Vigneshwara Raja,Christophe Raynaud,Besar Asllani,Hervé Morel,Dominique Planson Journal of Materials Science: Materials in Electronics, 2023, 34 (17), pp.1383. ⟨10.1007/s10854-023-10813-z⟩ Article dans une revue hal-04199489v1
Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs O. Aviñó-Salvadó,Cyril Buttay,F. Bonet,C. Raynaud,P. Bevilacquaet al. IEEE Transactions on Industrial Electronics, In press, ⟨10.1109/TIE.2023.3281705⟩ Article dans une revue hal-04147050v1
Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs Tamiris Grossl Bade,Hassan Hamad,Adrien Lambert,Hervé Morel,Dominique Planson Electronics, 2023, 12 (11), pp.2529. ⟨10.3390/electronics12112529⟩ Article dans une revue hal-04121028v1
Robust Nonlinear Control of a Power Flow Controller for Meshed DC Grids Tanguy Simon,Jean-François Trégouët,Xuefang Lin-Shi,Hervé Morel Control Engineering Practice, 2022, 131, ⟨10.1016/j.conengprac.2022.105389⟩ Article dans une revue hal-03860875v1
Capacitance temperature dependence analysis of GaN-on-Si power transistors Florian Rigaud-Minet,Julien Buckley,William Vandendaele,Matthew Charles,Marie-Anne Jaudet al. Energies, 2022, 15 (19), pp.7062. ⟨10.3390/en15197062⟩ Article dans une revue cea-03874112v1
Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs Ali Ammar,Luong Viêt Phung,Dominique Planson,Hervé Morel,Camille Sonneville Materials Science Forum, 2022, 1062, pp.613-618. ⟨10.4028/p-vms03o⟩ Article dans une revue hal-03703994v1
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes P. Vigneshwara Raja,Christophe Raynaud,Camille Sonneville,Atse Julien Eric N’dohi,Hervé Morelet al. Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩ Article dans une revue hal-03826217v1
New Definition of Critical Energy for SiC MOSFET Robustness under Short- Circuit Operations: the Repetitive Critical Energy C. Chen,Tien-Anh A Nguyen,D Labrousse,S Lefebvre,Cyril Buttayet al. Microelectronics Reliability, 2020, 114, pp.113839. ⟨10.1016/j.microrel.2020.113839⟩ Article dans une revue hal-02968998v1
Static and switching characteristics of 10 kV-class Silicon Carbide Bipolar Junction Transistors and Darlingtons Besar Asllani,Pascal Bevilacqua,Hervé Morel,Dominique Planson,Luong Viet Phunget al. Materials Science Forum, 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩ Article dans une revue hal-02931290v1
Subthreshold Drain current hysteresis of planar SiC MOSFETs Besar Asllani,Alberto Castellazzi,Dominique Planson,Hervé Morel Materials Science Forum, 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩ Article dans une revue hal-02060341v1
Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes Besar Asllani,Dominique Planson,Pascal Bevilacqua,Jean-Baptiste Fonder,Beverley Choucoutouet al. Materials Science Forum, 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩ Article dans une revue hal-02060334v1
Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT Layachi Boussouar,Hervé Morel,Bruno Allard,Cyril Buttay International Journal of Power Electronics, 2019, 10 (3), pp.187. ⟨10.1504/ijpelec.2019.099337⟩ Article dans une revue hal-02121811v1
10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization Besar Asllani,Hervé Morel,Luong Viêt Phung,Dominique Planson Energies, 2019, ⟨10.3390/en12234566⟩ Article dans une revue hal-02398585v1
High-Voltage SiC-JFET Fabrication and Full Characterization Besar Asllani,Pascal Bevilacqua,Abderrahime Zaoui,Gregory Grosset,Dominique Plansonet al. Materials Science Forum, 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩ Article dans une revue hal-02060228v1
Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature Oriol Aviño Salvado,Besar Asllani,Cyril Buttay,Christophe Raynaud,Hervé Morel IEEE Transactions on Electron Devices, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩ Article dans une revue hal-02418097v1
VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs Besar Asllani,Asad Fayyaz,Alberto Castellazzi,Hervé Morel,Dominique Planson Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩ Article dans une revue hal-01889461v1
SiC MOSFETs robustness for diode-less applications Oriol Aviño Salvado,C. Cheng,Cyril Buttay,Hervé Morel,D Labrousseet al. EPE Journal - European Power Electronics and Drives, 2018, pp.1 - 8. ⟨10.1080/09398368.2018.1456836⟩ Article dans une revue hal-01844980v1
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode Oriol Aviño Salvado,Hervé Morel,Cyril Buttay,Denis Labrousse,Stéphane Lefebvre Microelectronics Reliability, 2018, 88-90, pp.636-640. ⟨10.1016/j.microrel.2018.06.033⟩ Article dans une revue hal-01895791v1
A spiral planar inductor: An experimentally verified physically based model for frequency and time domains Aymen Ammouri,Tarek Ben Salah,Hervé Morel International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2017, pp.e2272. ⟨10.1002/jnm.2272⟩ Article dans une revue hal-01626146v1
SiC power devices packaging with a short-circuit failure mode capability Ilyas Dchar,Cyril Buttay,Hervé Morel Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.07.003⟩ Article dans une revue hal-01562547v1
A Novel Approach to Accurately Determine the tq Parameter of Thyristors Hatem Garrab,Atef Jedidi,Hervé Morel,Kamel Besbes IEEE Transactions on Industrial Electronics, 2017, 64 (1), pp.206 - 216. ⟨10.1109/tie.2016.2609381⟩ Article dans une revue hal-01617496v1
Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling Wissam Sabbah,Faical Arabi,Oriol Aviño Salvado,Cyril Buttay,Loic Théolieret al. Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.091⟩ Article dans une revue hal-01562549v1
Electrical, thermal and mechanical properties of poly-etherimide epoxy-diamine blend Nour Halawani,Jean-Louis Augé,Hervé Morel,O. Gain,S. Pruvost Composites Part B: Engineering, 2017, -, 110 (-), pp.530 - 541. ⟨10.1016/j.compositesb.2016.11.022⟩ Article dans une revue hal-01626136v1
High temperature ageing of microelectronics assemblies with SAC solder joints Wissam Sabbah,Pierre Bondue,Oriol Aviño Salvado,Cyril Buttay,Héìène Frémontet al. Microelectronics Reliability, 2017, ⟨10.1016/j.microrel.2017.06.065⟩ Article dans une revue hal-01564755v1
Evaluation of printed-circuit boards materials for high temperature operation Oriol Aviño Salvado,Wissam Sabbah,Cyril Buttay,Hervé Morel,Pascal Bevilacqua Journal of Microelectronics and Electronic Packaging, 2017, 14 (4), ⟨10.4071/imaps.516313⟩ Article dans une revue hal-01674483v1
The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case Atef Jedidi,Hatem Garrab,Hervé Morel,Kamel Besbes Journal of Power Electronics, 2017, 17 (2), pp.561 - 569. ⟨10.6113/jpe.2017.17.2.561⟩ Article dans une revue hal-01626139v1
A Control Strategy of DC Building Microgrid Connected to the Neighborhood and AC Power Network Thi Thuong Huyen Ma,Hamed Yahoui,Hoang Giang Vu,Nicolas Siauve,Hervé Morel Buildings, 2017, 7 (2), ⟨10.3390/buildings7020042⟩ Article dans une revue hal-01626141v1
Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications Thi Thanh Huyen Nguyen,Mihai Lazar,Jean-Louis Augé,Hervé Morel,Luong Viet Phunget al. Materials Science Forum, 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩ Article dans une revue hal-01391838v1
Avalanche robustness of SiC Schottky diode Ilyas Dchar,Cyril Buttay,Hervé Morel Microelectronics Reliability, 2016, ⟨10.1016/j.microrel.2016.07.086⟩ Article dans une revue hal-01373039v1
VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. Materials Science Forum, 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩ Article dans une revue hal-01387983v1
An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters Sameh Mtimet,Walid Ben Salah,Salah Tarek Ben,Ferid Kourda,Hervé Morel International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (3), pp. 287-300. ⟨10.1002/jnm.2005⟩ Article dans une revue istex hal-01388318v1
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs Cheng Chen,Denis Labrousse,Stéphane Lefebvre,Mickael Petit,Cyril Buttayet al. Microelectronics Reliability, 2015, pp.6. ⟨10.1016/j.microrel.2015.06.097⟩ Article dans une revue hal-01198584v1
A Novel approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems Atef Jedidi,Hatem Garrab,Hervé Morel,Kamel Besbes IEEE Transactions on Industrial Electronics, 2015, 62 (4), ⟨10.1109/TIE.2014.2356440⟩ Article dans une revue hal-01388299v1
P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices Mihai Lazar,Selsabil Sejil,L. Lalouat,Christophe Raynaud,D. Caroleet al. Romanian Journal of Information Science and Technology, 2015, 18 (4), pp.329-342 Article dans une revue hal-01626119v1
Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET Sami Ghedira,Cyril Buttay,Hervé Morel,Kamel Besbes European Physical Journal: Applied Physics, 2014, 66 (2), pp.20103. ⟨10.1051/epjap/2014130533⟩ Article dans une revue istex hal-01005929v1
Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design Hervé Morel,Aymen Ammouri,Walid Ben Salah,Sofiane Khachroumi,Tarek Ben Salahet al. European Physical Journal: Applied Physics, 2014, 66 (2), pp.20901. ⟨10.1051/epjap/2014130430⟩ Article dans une revue istex hal-01006044v1
LVDC: An Efficient Energy Solution for On-Grid Photovoltaic Applications Anis Ammous,Hervé Morel Smart Grid and Renewable Energy, 2014, 5 (4), pp.63-76. ⟨10.4236/sgre.2014.54007⟩ Article dans une revue hal-01005973v1
Die attach using silver sintering. Practical implementation and analysis Amandine Masson,Wissam Sabbah,Raphaël Riva,Cyril Buttay,Stephane Azzopardiet al. European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩ Article dans une revue hal-00874465v1
Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters Rémi Robutel,Christian Martin,Cyril Buttay,Hervé Morel,Paulo Mattavelliet al. IEEE Transactions on Power Electronics, 2013, PP (99), pp.1. ⟨10.1109/TPEL.2013.2279772⟩ Article dans une revue hal-00874455v1
Thermal Stability of Silicon Carbide Power JFETs Cyril Buttay,Rémy Ouaida,Hervé Morel,Dominique Bergogne,Christophe Raynaudet al. IEEE Transactions on Electron Devices, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩ Article dans une revue hal-00881667v1
Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages Dominique Bergogne,Cyril Buttay,Rémi Robutel,Fabien Dubois,Rémy Ouaidaet al. EPE Journal - European Power Electronics and Drives, 2013, 23 (3), pp.5--12 Article dans une revue hal-00997389v1
Thermal Runaway Robustness of SiC VJFETs Rémy Ouaida,Cyril Buttay,Anh Dung Hoang,Raphaël Riva,Dominique Bergogneet al. Materials Science Forum, 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩ Article dans une revue hal-00799884v1
Normally-On SIC JFETs: Active Protections Fabien Dubois,Dominique Bergogne,Cyril Buttay,Hervé Morel,Régis Meuret EPE Journal - European Power Electronics and Drives, 2012, 22 (3), pp.6-13 Article dans une revue hal-00821756v1
Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding Bassem Mouawad,Maher Soueidan,D. Fabregue,Cyril Buttay,Bruno Allardet al. IEEE Transactions on Components and Packaging Technologies, 2012, 2 (4), pp.553 - 560. ⟨10.1109/TCPMT.2012.2186453⟩ Article dans une revue hal-00672244v1
Full densification of Molybdenum powders using Spark Plasma Sintering Bassem Mouawad,Maher Soueidan,D. Fabregue,Cyril Buttay,Vincent Bleyet al. Metallurgical and Materials Transactions A, 2012, pp.1-8. ⟨10.1007/s11661-012-1144-2⟩ Article dans une revue hal-00707782v1
Nonlinear average modeling of multilevel converters B. Omri,Kaiçar Ammous,Anis Ammous,Hervé Morel International Review on Modelling and Simulations, 2012, 5 (1), pp.154-163 Article dans une revue hal-00747412v1
Thermal stability of silicon-carbide power diodes Cyril Buttay,Christophe Raynaud,Hervé Morel,Gabriel Civrac,Marie-Laure Locatelliet al. IEEE Transactions on Electron Devices, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩ Article dans une revue hal-00672440v1
Optimal design of power converter using multi-objective genetic algorithm H. Mejbri,Kaiçar Ammous,Hervé Morel,Anis Ammous International Review on Modelling and Simulations, 2012, 5 (2), pp.793-802 Article dans une revue hal-00747409v1
Multi-Objective Optimization of Power Converter Sizing Based on Genetic Algorithms: Application to Photovoltaic Systems Hanen Mejbri,Hervé Morel,Kaiçar Ammous,Anis Ammous International Review on Modelling and Simulations, 2012, 5 (2), pp. 826-839 Article dans une revue hal-00854436v1
State of the art of high temperature power electronics Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacquaet al. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩ Article dans une revue istex hal-00597432v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. Advanced Materials Research, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩ Article dans une revue hal-00799902v1
Inverse Models of Voltage and Current Probes Kaiçar Ammous,Hervé Morel,Anis Ammous IEEE Transactions on Instrumentation and Measurement, 2011, 60 (12), pp.3898 - 3906. ⟨10.1109/TIM.2011.2144710⟩ Article dans une revue hal-00629210v1
Characterization and VHDL-AMS modeling of SiC-JFET transistor Rami Mousa,Dominique Planson,Hervé Morel European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩ Article dans une revue istex hal-00747438v1
Design of a High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter Rémi Robutel,Christian Martin,Hervé Morel,Cyril Buttay,Nicolas Gazelet al. Journal of Microelectronics and Electronic Packaging, 2011, 8 (1), pp.23-30 Article dans une revue hal-00729066v1
Modelling, analysis, and experimental study of SiC JFET body diode Tarek Ben Salah,Y. Lahbib,Hervé Morel European Physical Journal: Applied Physics, 2011, 53 (1), pp.Article Number: 10301. ⟨10.1051/epjap/2010100172⟩ Article dans une revue istex hal-00579353v1
SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation Tarek Ben Salah,Sameh Mtimet,Hervé Morel Sensor letters, 2011, 9 (6), pp.2347-2350. ⟨10.1166/sl.2011.1762⟩ Article dans une revue hal-00747433v1
Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices Christophe Raynaud,Dominique Tournier,Hervé Morel,Dominique Planson Diamond and Related Materials, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩ Article dans une revue hal-02186368v1
Analysis of Power Switching Losses Accounting Probe Modeling Kaiçar Ammous,Hervé Morel,Anis Ammous IEEE Transactions on Instrumentation and Measurement, 2010, 59 (12), pp.3218 - 3226. ⟨10.1109/TIM.2010.2047302⟩ Article dans une revue hal-00539180v1
Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications Tarek Ben Salah,Sofiane Khachroumi,Hervé Morel Sensors, 2010, 10 (1), pp.388-399. ⟨10.3390/s100100388⟩ Article dans une revue hal-00476196v1
Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor Olivier Berry,Youness Hamieh,Stéphane Rael,Farid Meibody-Tabar,Sébastien Vieillardet al. Materials Science Forum, 2010, 645-6648, pp.957-960. ⟨10.4028/www.scientific.net/MSF.645-64⟩ Article dans une revue hal-00539615v1
Toward SiC-JFETs modelling with temperature dependence Tarek Ben Salah,Hervé Morel,Sameh Mtimet European Physical Journal: Applied Physics, 2010, 52 (2), pp.Article number 20301. ⟨10.1051/epjap/2010139⟩ Article dans une revue istex hal-00539603v1
Reduced-Order Thermal Behavioral Model Based on Diffusive Representation Bruno Allard,Xavier Jordà,Pierre Bidan,Axel Rumeau,Hervé Morelet al. IEEE Transactions on Power Electronics, 2009, 24 (12), pp.2833-2846. ⟨10.1109/TPEL.2009.2028231⟩ Article dans une revue hal-00476198v1
High Power Density SiC 450A AccuMOSFET for Current Limiting Applications Dominique Tournier,Pascal Bevilacqua,Dominique Planson,Hervé Morel,Pierre Brosselardet al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.911-914. ⟨10.4028/www.scientific.net/MSF.615-617.911⟩ Article dans une revue hal-04368124v1
SiC-VJFETs power switching devices: an improved model and parameter optimization technique Tarek Ben Salah,Y. Lahbib,Hervé Morel European Physical Journal: Applied Physics, 2009, 48 (3), pp.Article Number: 30305. ⟨10.1051/epjap/2009187⟩ Article dans une revue istex hal-00476199v1
Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) Pierre Lefranc,Dominique Planson,Hervé Morel,Dominique Bergogne Solid-State Electronics, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩ Article dans une revue istex hal-00476201v1
Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique Nicolas Dheilly,Dominique Planson,Pierre Brosselard,Jawad Ul Hassan,Pascal Bevilacquaet al. Materials Science Forum, 2009, MATERIALS SCIENCE FORUM, 615-617, pp.703-706. ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ Article dans une revue hal-04368136v1
Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes Tarek Ben Salah,Mahbouba Amairi,Zina Sassi,Hervé Morel Sensor letters, 2009, 7 (5), pp.707-711. ⟨10.1166/sl.2009.1135⟩ Article dans une revue hal-00476197v1
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah,Damien Risaletto,Christophe Raynaud,Kamel Besbes,Dominique Bergogneet al. Materials Science Forum, 2008, Materials Science Forum, Volumes 600-603, pp.1031-1034. ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Article dans une revue hal-04452237v1
On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior Bruno Allard,Hatem Garrab,Tarek Ben Salah,Hervé Morel,Kaiçar Ammouset al. IEEE Transactions on Power Electronics, 2008, 23 (1), pp.491-494. ⟨10.1109/TPEL.2007.911882⟩ Article dans une revue hal-00313945v1
Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes S. Abis,Kaiçar Ammous,Hervé Morel,Anis Ammous International Review of Electrical Engineering, 2007, 4 (2), pp.544-556 Article dans une revue hal-00357024v1
Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes Tarek Ben Salah,Cyril Buttay,Bruno Allard,Hervé Morel,Sami Ghediraet al. IEEE Transactions on Power Electronics, 2007, 22 (1), pp.13-20. ⟨10.1109/TPEL.2006.886648⟩ Article dans une revue hal-00135198v1
A novel approach to extract accurate design parameters of PiN diode Tarek Ben Salah,Sami Ghedira,Hatem Garrab,Hervé Morel,Damien Risalettoet al. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2007, 20 (6), pp.283-297. ⟨10.1002/jnm.646⟩ Article dans une revue istex hal-00358834v1
A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices Tarek Ben Salah,Hatem Garrab,Sami Ghedira,Bruno Allard,Damien Risalettoet al. Superlattices and Microstructures, 2006, 40 (4-6), pp.580-587 Article dans une revue hal-00140085v1
Model Requirements for Simulation of Low-Voltage MOSFET in Automotive Applications Cyril Buttay,Hervé Morel,Bruno Allard,Pierre Lefranc,Olivier Brevet IEEE Transactions on Power Electronics, 2006, 21 (3), pp.613-624. ⟨10.1109/TPEL.2006.872383⟩ Article dans une revue hal-00138878v1
Electro-thermal simulation including a temperature distribution inside power semiconductor devices Bruno Allard,Hatem Garrab,Hervé Morel International Journal of Electronics, 2005, 92 (4), pp.189-213 Article dans une revue hal-00140854v1
Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement Bruno Allard,Gérard Coquery,Laurent Dupont,Zoubir Khatir,Mihai Lazaret al. Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩ Article dans une revue hal-01702019v1
On the extraction of PiN diode design parameters for validation of integrated power converter design Hatem Garrab,Bruno Allard,Hervé Morel,Kaiçar Ammous,Sami Ghediraet al. IEEE Transactions on Power Electronics, 2005, 20 (3), pp.660-670. ⟨10.1109/TPEL.2005.846544⟩ Article dans une revue hal-00140858v1
Avalanche Behavior of Low-Voltage Power MOSFETs Cyril Buttay,Tarek Ben Salah,Dominique Bergogne,Bruno Allard,Hervé Morelet al. IEEE Power Electronics Letters, 2004, 2 (3), pp.104-107. ⟨10.1109/LPEL.2004.839638⟩ Article dans une revue hal-00138863v1
Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation Hatem Garrab,Bruno Allard,Hervé Morel,Sami Ghedira,Kamel Besbes International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2004, 17 (6): 539-560 NOV-DEC 2004 (6), pp.539-560 Article dans une revue hal-00140093v1
Developing an advanced PWM-switch model including semiconductor device non-linearities Anis Ammous,M. Ayedi,Y. Ounajjar,Fayçal Sellami,Kaiçar Ammouset al. European Physical Journal: Applied Physics, 2003, 21 (2), pp.107-120 Article dans une revue hal-00140101v1
Developing an equivalent thermal model for discrete semiconductor packages Anis Ammous,Fayçal Sellami,Kaiçar Ammous,Hervé Morel,Bruno Allardet al. International Journal of Thermal Sciences, 2003, 42 (5), pp.533-539 Article dans une revue hal-00140112v1
Modèle moyen de l'onduleur triphasé de tension pour la conception de lois de commande Bruno Allard,Hervé Morel,Xuefang Lin-Shi,Jean-Marie Rétif European Journal of Electrical Engineering, 2002, 5 (1), pp.183-201. ⟨10.3166/rige.5.183-201⟩ Article dans une revue istex hal-00403393v1
Non-linear control design for a boost converter using bond graphs Xuefang Lin-Shi,Jean-Marie Rétif,Bruno Allard,Hervé Morel Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering, 2002, 216 (I1), pp.1-11 Article dans une revue hal-00140094v1
On the validity of the standard SPICE model of the diode for simulation in power electronics Nouri Massmoudi,Djébé M'Baïri,Bruno Allard,Hervé Morel IEEE Transactions on Industrial Electronics, 2001, 48 (4), pp.864-867 Article dans une revue hal-00140095v1
Electrothermal modeling of IGBT's: Application to short-circuit conditions Anis Ammous,Kaiçar Ammous,Hervé Morel,Bruno Allard,Dominique Bergogneet al. IEEE Transactions on Power Electronics, 2000, 15 (4), pp.778-790 Article dans une revue hal-00140098v1
Choosing a thermal model for electrothermal simulation of power semiconductor devices Anis Ammous,Sami Ghedira,Bruno Allard,Hervé Morel,Denise Renault IEEE Transactions on Power Electronics, 1999, 14 (2), pp.300-307 Article dans une revue hal-00140099v1
Transient temperature measurements and modeling of IGBT's under short circuit Anis Ammous,Bruno Allard,Hervé Morel IEEE Transactions on Power Electronics, 1998, 13 (1), pp.12-25 Article dans une revue hal-00140100v1
Les composants de puissance : état de l'art, les évolutions Jean-Pierre Chante,Bruno Allard,Dominique Bergogne,Francis Calmon,René Elhingeret al. Revue Internationale de Génie Electrique, RIGE, 1998 Article dans une revue hal-02117240v1
MODELING OF A NONLINEAR CONDUCTIVE MAGNETIC-CIRCUIT .2. BOND GRAPH FORMULATION H. Fraisse,Jean-Pierre Masson,F. Marthouret,Hervé Morel IEEE Transactions on Magnetics, 1995, 31 (6), pp.4068-4070 Article dans une revue hal-00140102v1
STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH Hervé Morel,S. H. Gamal,Jean-Pierre Chante IEEE Transactions on Power Electronics, 1994, 9 (1), pp.112-120 Article dans une revue hal-00140103v1

Communication dans un congrès (124)

Analysis of Robustness of 650 V GaN HEMT under Repetitive Short-Circuits Adrien Lambert,Hervé Morel,Pascal Bevilacqua,D. Tournier,Laurent Guillotet al. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France Communication dans un congrès hal-05323083v1
Aging of p-GaN gate HEMTs under hard-switching conditions Ababacar Diouf,Valeria Rustichelli,Loris Pace,Emmanuel Marcault,Maroun Alamet al. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France Communication dans un congrès hal-05323081v1
Étude de la fiabilité des GaN SP-HEMT sous surtensions en commutation dure Thomas Vadebout,Pascal Bevilacqua,Valeria Rustichelli,Hervé Morel,Maroun Alamet al. Symposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France Communication dans un congrès hal-05495813v1
Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching Thomas Vadebout,Pascal Bevilacqua,Valeria Rustichelli,Maroun Alam,Laurence Allirandet al. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France Communication dans un congrès hal-05323111v1
Méthode d'étude de fiabilité de MOSFET SiC mis en parallèle soumis à une avalanche Aude Valat-Marty,Joao Oliveira,Marco Andrade,Pascal Bevilacqua,Maximin Blancet al. Symposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France Communication dans un congrès hal-05506660v1
Méthode d'étude de fiabilité de MOSFET SiC mis en parallèle soumis à une avalanche Aude Valat-Marty,Joao Oliveira,Marco Andrade,Pascal Bevilacqua,Maximin Blancet al. Symposium de Génie Électrique SGE 2025, cnrs, ups, Jul 2025, Toulouse, France Communication dans un congrès hal-05506696v1
Electrical characterization of HV (10 kV) Power 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Brenda Fosso-Sob,Dominique Planson,Pascal Bevilacqua,Camille Sonnevilleet al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.126-128 Communication dans un congrès hal-04677764v1
Repetitive Short-circuits on 650 V GaN Adrien Lambert,Hervé Morel,Dominique Planson,Luong Viêt Phung,Dominique Tournieret al. PCIM Europe 2024, Jun 2024, Nuremberg, Germany Communication dans un congrès hal-04626451v1
Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs Joao Oliveira,Regis Meuret,Fabio Coccetti,Roman Boldyrjew-Mast,Clemens Herrmannet al. 13th International Conference on Integrated Power Electronics Systems, CIPS 2024, Mar 2024, Dusseldorf, Germany. pp.Pages 467 - 475 Communication dans un congrès hal-04974583v1
Matching physical and electrical measurements (OBIC) to simulation (FEM) on high voltage bipolar diodes Dominique Planson,Camille Sonneville,Pascal Bevilacqua,Pierre Brosselard,Mihai Lazaret al. International Conference on Silicon Carbide and Related Materials (ICSCRM 2024), Sep 2024, Raleigh (North Carolina), United States. pp.591-592 Communication dans un congrès hal-04680725v1
Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V Adrien Lambert,Hervé Morel,D. Tournier,Dominique Planson,Luong Viêt Phunget al. 5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France Communication dans un congrès hal-04150168v1
Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viêt Phung,Frédéric Richardeauet al. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04221605v1
First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests Hassan Hamad,Dominique Tournier,Jean-Michel Reynes,Olivier Perrotin,Régis Meuretet al. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France Communication dans un congrès hal-04240602v1
New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices Joao Oliveira,Bernardo Cougo,Fabio Coccetti,Stephane Azzopardi,Hervé Morel European Conference on Power Electronics and Applications, Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264294⟩ Communication dans un congrès hal-04316671v1
Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics Hervé Morel,Maroun Alam,Pascal Bevilacqua,D. Tournier,Dominique Planson Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France Communication dans un congrès hal-04224402v1
Application of the Double Source Switching Test to GaN HEMTs Tamiris Grossl Bade,Maroun Alam,Hervé Morel,Dominique Planson 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264519⟩ Communication dans un congrès hal-04225311v1
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor Pierre Brosselard,Dominique Planson,D. Tournier,Pascal Bevilacqua,Camille Sonnevilleet al. ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy Communication dans un congrès hal-04222211v1
Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology Ralph Makhoul,Nour Beydoun,Abdelhakim Bourennane,Luong Viet Phung,M. Lazaret al. 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩ Communication dans un congrès hal-04203163v1
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration Ralph Makhoul,Abdelhakim Bourennane,Luong Viêt Phung,Frédéric Richardeau,Mihai Lazaret al. IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩ Communication dans un congrès hal-04147862v1
Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes P Vigneshwara Raja,Christophe Raynaud,Besar Asllani,Herve Morel,Dominique Planson International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India Communication dans un congrès hal-03990840v1
Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses Maroun Alam,Hervé Morel,Luong Viêt Phung,Dominique Planson,A. Yvon 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩ Communication dans un congrès hal-03887865v1
Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling Florian Rigaud-Minet,Julien Buckley,William Vandendaele,Stéphane Becu,Matthew Charleset al. SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan Communication dans un congrès cea-03875079v1
Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT Ali Ammar,Mihai Lazar,Bertrand Vergne,Sigo Scharnholz,Luong Viêt Phunget al. 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩ Communication dans un congrès hal-03856578v1
Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC Microgrids Xuefang Lin-Shi,Tanguy Simon,Jean-François Trégouët,Hervé Morel PEAS, Nov 2021, Shanghai, China. ⟨10.1109/PEAS53589.2021.9628872⟩ Communication dans un congrès hal-03375502v1
Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications Joao Oliveira,Ali Alhoussen,Florent Loiselay,Hervé Morel,Dominique Planson EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570434⟩ Communication dans un congrès hal-03260519v1
Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design Tanguy Simon,Mattia Giaccagli,Jean-François Trégouët,Daniele Astolfi,Vincent Andrieuet al. CDC, Dec 2021, Austin, United States. ⟨10.1109/CDC45484.2021.9682901⟩ Communication dans un congrès hal-03375498v1
Modelling and Control of a Power Flow Controller for DC Microgrids Tanguy Simon,Jean-François Trégouët,Hervé Morel,Xuefang Lin-Shi EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨10.23919/EPE21ECCEEurope50061.2021.9570493⟩ Communication dans un congrès hal-03360965v1
Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor Besar Asllani,Hervé Morel,Pascal Bevilacqua,Dominique Planson EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩ Communication dans un congrès hal-02945919v1
Analysis of Parasitic Elements in Power Modules Based on GaN Components Joao Oliveira,Hervé Morel,Dominique Planson,Florent Loiselay PCIM Europe 2020, Jul 2020, Nuremberg, Germany Communication dans un congrès hal-02945892v1
Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs Joao Oliveira,Florent Loiselay,Hervé Morel,Dominique Planson EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩ Communication dans un congrès hal-02945913v1
Static characteristics of 5 kV SiC BJTs and Darlington’s Besar Asllani,Dominique Planson,Hervé Morel,T Lagier International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan Communication dans un congrès hal-02428513v1
SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation Besar Asllani,Hervé Morel,Dominique Planson,Asad Fayyaz,Alberto Castellazzi ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩ Communication dans un congrès hal-01984359v1
Benefits of GaN transistors and embedding in PCB laminates Cyril Buttay,Christian Martin,Charles Joubert,Hervé Morel,Bruno Allardet al. SIA Power Train & Electronics, Jun 2019, Paris, France Communication dans un congrès hal-02291496v1
Packaging Solution for SiC Power Modules with a Fail-to-Short Capability Ilyas Dchar,Cyril Buttay,Hervé Morel APEC, Mar 2019, Anaheim, Californie, United States. ⟨10.1109/APEC.2019.8722126⟩ Communication dans un congrès hal-02076181v1
V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate Besar Asllani,Alberto Castellazzi,Oriol Aviño Salvado,Asad Fayyaz,Hervé Morelet al. IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩ Communication dans un congrès hal-02099781v1
An investigation of current distribution over four GaN HEMTs in parallel configurations Thilini Wickramasinghe,Cyril Buttay,Christian Martin,Hervé Morel,Pascal Bevilacquaet al. The 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Oct 2019, Raleigh, United States. ⟨10.1109/WiPDA46397.2019.8998816⟩ Communication dans un congrès hal-02405882v1
A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices Thilini Wickramasinghe,Bruno Allard,Cyril Buttay,Charles Joubert,Christian Martinet al. 45th IEEE IECON, Oct 2019, Lisbonne, Portugal. ⟨10.1109/IECON.2019.8927490⟩ Communication dans un congrès hal-02405883v1
Robustness study of 1700 V 45 mΩ SiC MOSFETs Quentin Molin,Mehdi Kanoun,Christophe Raynaud,Hervé Morel 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩ Communication dans un congrès hal-01942728v1
Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes Besar Asllani,Dominique Planson,Pascal Bevilacqua,J B Fonder,B Choucoutouet al. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2 Communication dans un congrès hal-01985994v1
Subthreshold Drain current hysteresis of planar SiC MOSFETs Besar Asllani,A Castellazzi,Dominique Planson,Hervé Morel ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04 Communication dans un congrès hal-02428531v1
Microréseaux DC : avantages des réseaux maillés Hervé Morel,Loïc Michel,Guy Clerc,Pascal Bevilacqua,Mohamed Bararaet al. Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France Communication dans un congrès hal-02134229v1
Repetitive short-circuit measurement on SiC MOSFET Quentin Molin,Christophe Raynaud,Mehdi Kanoun,Hervé Morel ECSCRM'18, Sep 2018, Birmingham, United Kingdom Communication dans un congrès hal-01980834v1
High-Voltage SiC-JFET Fabrication and Full Characterization Besar Asllani,Pascal Bevilacqua,A. Zaoui,G Grosset,Dominique Plansonet al. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5 Communication dans un congrès hal-02428523v1
An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module Malorie Hologne,Pascal Bevilacqua,Bruno Allard,Guy Clerc,Hervé Morelet al. IEMDC, May 2017, Miami, FL, United States. pp.MO263, ⟨10.1109/IEMDC.2017.8002028⟩ Communication dans un congrès hal-01532058v1
Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors Hugo Reynes,Cyril Buttay,Hervé Morel WiPDA, Oct 2017, Albuquerque, United States. ⟨10.1109/WiPDA.2017.8170581⟩ Communication dans un congrès hal-01645029v1
Improved Layout of Inverter for EMC Analysis Ousseynou Yade,Christian Martin,Christian Vollaire,Arnaud Bréard,Marwan Aliet al. More Electrical Aircraft (MEA), Feb 2017, Bordeaux, France Communication dans un congrès hal-01715021v1
Evaluation of printed-circuit boards materials for high temperature operation Oriol Aviño Salvado,Wissam Sabbah,Cyril Buttay,Hervé Morel,Pascal Bevilacqua HiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom Communication dans un congrès hal-01565131v1
Robustness of SiC MOSFET under avalanche conditions Ilyas Dchar,Marion Zolkos,Cyril Buttay,Hervé Morel APEC, Mar 2017, Tampa, FL, United States. pp.2263-2268, ⟨10.1109/APEC.2017.7931015⟩ Communication dans un congrès hal-01535735v1
Étude de la robustesse de l’oxyde de grille pour des applications aéronautiques Oriol Aviño Salvado,Hervé Morel,Cyril Buttay JCGE, May 2017, Arras, France. pp.146345 Communication dans un congrès hal-01534712v1
Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-grids Mohamed Barara,Hervé Morel,Guy Clerc International conference on components and systems for DC grids, Mar 2017, Grenoble, France Communication dans un congrès hal-01793569v1
Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker Thi Thuong Huyen Ma,Hamed Yahoui,Fedia Baccar El Boubkari,Hervé Morel,Hoang-Giang Vuet al. COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique Communication dans un congrès hal-01639199v1
Analyse de la robustesse des MOSFET SiC pour les applications diode-less Oriol Aviño Salvado,Cheng Chen,Cyril Buttay,Hervé Morel,Denis Labrousseet al. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France Communication dans un congrès hal-01361711v1
State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications Layal Ghossein,Florent Morel,Hervé Morel,Piotr Dworakowski PCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD Communication dans un congrès hal-01316570v1
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices Mihai Lazar,Davy Carole,Christophe Raynaud,Gabriel Ferro,Selsabil Sejilet al. CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩ Communication dans un congrès hal-01388019v1
Vertical termination filled with adequate dielectric for SiC devices in HVDC applications T. Nguyen-Bui,Mihai Lazar,Jean-Louis Augé,Hervé Morel,L. Phunget al. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy Communication dans un congrès hal-02138529v1
Robustness of SiC MOSFETs in short-circuit mode Cheng Chen,Denis Labrousse,Stéphane Lefebvre,Mickaël Petit,Cyril Buttayet al. PCIM Europe 2015, May 2015, Nuremberg, Germany Communication dans un congrès hal-01196528v1
Considerations for High Temperature Power Electronics Bruno Allard,Cyril Buttay,Christian Martin,Hervé Morel 18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia Communication dans un congrès hal-01372146v1
High temperature operation of SiC transistors Cyril Buttay,Marwan Ali,Oriol Aviño Salvado,Hervé Morel,Bruno Allard Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States Communication dans un congrès hal-01373030v1
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs Cheng Chen,Denis Labrousse,Stéphane Lefebvre,Mickael Petit,Cyril Buttayet al. ESREF, Oct 2015, Toulouse, France. pp.1708-1713 Communication dans un congrès hal-01700463v1
4H-SiC P-N junctions realized by VLS for JFET lateral structures Selsabil Sejil,Farah Laariedh,Mihai Lazar,Davy Carole,Christian Brylinskiet al. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61 Communication dans un congrès hal-02133686v1
Estimation des pertes dans les transistors bipolaires SiC Cheng Chen,Denis Labrousse,Stéphane Lefebvre,Cyril Buttay,Hervé Morel Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France Communication dans un congrès hal-01065220v1
Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique Marc Petit,Seddik Bacha,Xavier Guillaud,Hervé Morel,Dominique Plansonet al. 1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France Communication dans un congrès hal-01065154v1
Power Loss Estimation in SiC Power BJTs Chen Cheng,Denis Labrousse,Stéphane Lefebvre,Hervé Morel,Cyril Buttayet al. PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p Communication dans un congrès hal-00997718v1
Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes Xavier Fonteneau,Florent Morel,Cyril Buttay,Hervé Morel,Philippe Lahaye APEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, ⟨10.1109/APEC.2013.6520668⟩ Communication dans un congrès hal-00829353v1
SiC Vertical JFET Pure Diode-Less Inverter Leg Rémy Ouaida,Xavier Fonteneau,Fabien Dubois,Dominique Bergogne,Florent Morelet al. APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩ Communication dans un congrès hal-00829343v1
Analysis of the SiC VJFET gate punch-through and its dependence with the temperature Fabien Dubois,Dominique Bergogne,Dominique Tournier,Cyril Buttay,Régis Meuretet al. EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩ Communication dans un congrès hal-00874655v1
High Temperature Ageing of Fe-based Nanocrystalline Ribbons Christian Martin,Rémi Robutel,Cyril Buttay,Fabien Sixdenier,Pascal Bevilacquaet al. HiTEC 2012, May 2012, Albuquerque, United States. 6p Communication dans un congrès hal-00760373v1
Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications Bassem Mouawad,Cyril Buttay,Maher Soueidan,Hervé Morel,Vincent Bleyet al. ISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩ Communication dans un congrès hal-00707820v1
A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs Fabien Dubois,Stéphane Sorel,Sonia Dhokkar,Régis Meuret,Dominique Bergogneet al. ECCE, Sep 2012, Raleigh, United States. pp.3581, ⟨10.1109/ECCE.2012.6342486⟩ Communication dans un congrès hal-00739021v1
3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules Bassem Mouawad,Cyril Buttay,Maher Soueidan,Hervé Morel,Bruno Allardet al. 7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438 Communication dans un congrès hal-00707741v1
Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode Xavier Fonteneau,Florent Morel,Hervé Morel,Philippe Lahaye,Eliana Rondon ECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩ Communication dans un congrès hal-00739006v1
An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators Dominique Bergogne,Fabien Dubois,Christian Martin,Khalil El Falahi,Luong Viet Phunget al. HiTEC 2012, May 2012, Albuquerque, United States. 6p Communication dans un congrès hal-00760366v1
Temperature dependence of silicon and silicon carbide power devices: An experimental analysis Mahbouba Amairi,Sameh Mtimet,Tarek Ben Salah,Hervé Morel MELECON 2012, Mar 2012, Tunis, Tunisia. pp.97 - 101, ⟨10.1109/MELCON.2012.6196389⟩ Communication dans un congrès hal-00747425v1
Report de puce par frittage d'argent - mise en oeuvre et analyse Amandine Masson,Wissam Sabbah,Raphaël Riva,Cyril Buttay,Stephane Azzopardiet al. 14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61) Communication dans un congrès hal-00729156v1
Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC Xavier Fonteneau,Florent Morel,Hervé Morel,Philippe Lahaye,Didier Léonard 14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24) Communication dans un congrès hal-00729345v1
Thermal Runaway Robustness of SiC VJFETs Rémy Ouaida,Cyril Buttay,Anh Dung Hoang,Raphaël Riva,Dominique Bergogneet al. CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p Communication dans un congrès hal-00759975v2
Active protections for normally-on SiC JFETs Fabien Dubois,Damien Risaletto,Dominique Bergogne,Hervé Morel,Cyril Buttayet al. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD Communication dans un congrès hal-00629227v1
Thermal requirements of SiC Power Devices Cyril Buttay,Christophe Raynaud,Hervé Morel,Gabriel Civrac,Marie-Laure Locatelliet al. 6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France Communication dans un congrès hal-00672631v1
Higher temperature power electronics for larger-scale mechatronic integration Bruno Allard,Cyril Buttay,Dominique Tournier,Rémi Robutel,Jean-François Mogniotteet al. Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination) Communication dans un congrès hal-00687139v1
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications Dominique Tournier,Pierre Brosselard,Christophe Raynaud,Mihai Lazar,Hervé Morelet al. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD Communication dans un congrès hal-00661500v1
Integrated common mode capacitors for SiC JFET inverters Rémi Robutel,Christian Martin,Hervé Morel,Paulo Mattavelli,Dushan Boroyevitchet al. APEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩ Communication dans un congrès hal-00618665v1
High-temperature die-attaches for SiC power devices Amandine Masson,Cyril Buttay,Hervé Morel,Christophe Raynaud,Stanislas Hascoëtet al. EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161 Communication dans un congrès hal-00672602v1
A multi-physics model of the VJFET with a lateral channel Hervé Morel,Youness Hamieh,Dominique Tournier,Rémi Robutel,Fabien Duboiset al. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD Communication dans un congrès hal-00629220v1
High-temperature behavior of SiC power diodes Cyril Buttay,Christophe Raynaud,Hervé Morel,Mihai Lazar,Gabriel Civracet al. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD Communication dans un congrès hal-00629225v1
Ultrafast safety system to turn-off normally on SiC JFETs Fabien Dubois,Dominique Bergogne,Damien Risaletto,Rémi Perrin,Abderrahime Zaouiet al. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD Communication dans un congrès hal-00629232v1
Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization Cyril Buttay,Amandine Masson,Jianfeng Li,Mark C. Johnson,Mihai Lazaret al. HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7 Communication dans un congrès hal-00672619v1
SIC inverter optimization for high temperature applications Régis Meuret,Olivier Berry,Fabien Dubois,Youness Hamieh,Stéphane Raëlet al. 27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France Communication dans un congrès hal-02937166v1
Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON) Dominique Bergogne,Olivier Berry,Sonia Dhokkar,Youness Hamieh,Farid Meibody-Tabaret al. 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618715v1
Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter Rémi Robutel,Christian Martin,Hervé Morel,Cyril Buttay,Dominique Bergogneet al. HiTEC 2010, May 2010, Albuquerque, United States. pp.000236 Communication dans un congrès hal-00485284v1
Caractérisation des non-linéarités dans les condensateurs céramiques haute température Rémi Robutel,Christian Martin,Cyril Buttay,Hervé Morel,Régis Meuret 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618657v1
High Temperature Inverter for Airborne Application Fabien Dubois,Dominique Bergogne,Damien Risaletto,Rémi Robutel,Hervé Morelet al. HiTEC 2010, May 2010, Albuquerque, United States. pp.000222 Communication dans un congrès hal-00485279v1
Normally-On SiC JFETs in power converters: Gate driver and safe operation Dominique Bergogne,Damien Risaletto,Fabien Dubois,Asif Hammoud,Hervé Morelet al. 6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD Communication dans un congrès hal-00629214v1
Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance Damien Risaletto,Dominique Bergogne,Fabien Dubois,Hervé Morel,Cédric Rubyet al. 13ème EPF, Jun 2010, Saint-Nazaire, France Communication dans un congrès hal-00618693v1
Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages Dominique Bergogne,Asif Hammoud,Dominique Tournier,Cyril Buttay,Youness Amiehet al. EPE, Sep 2009, Barcelone, France. pp.1--8 Communication dans un congrès hal-00446059v1
State of the art of High Temperature Power Electronics Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacquaet al. Microtherm, Jun 2009, Lodz, Poland. pp.8-17 Communication dans un congrès hal-00413349v1
Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique Nicolas Dheilly,Dominique Planson,Pierre Brosselard,Hassan Jawad,Pascal Bevilacquaet al. ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩ Communication dans un congrès hal-00391369v1
High Power Density SiC 450A AccuMOSFET for Current Limiting Applications Dominique Tournier,Pascal Bevilacqua,Dominique Planson,Hervé Morel,Pierre Brosselardet al. CSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩ Communication dans un congrès hal-00391376v1
SiC JFET for high temperature power switches Dominique Bergogne,Dominique Tournier,Rami Mousa,Mohsen Shafiee Khoor,Dominique Plansonet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4 Communication dans un congrès hal-00373058v1
VHDL-AMS model of IGBT for electro-thermal simulation Their Ibrahim,Bruno Allard,Hervé Morel,Sabrine M'Rad ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417461⟩ Communication dans un congrès hal-00369426v1
High temperature characterization of SiC-JFET and modelling Rami Mousa,Dominique Planson,Hervé Morel,Christophe Raynaud ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417501⟩ Communication dans un congrès hal-00369458v1
Towards an Airborne High Temperature SiC Inverter Dominique Bergogne,Herve Morel,Dominique Planson,Dominique Tournier,Pascal Bevilacquaet al. 2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, Rhodes, France. pp.3178-3183, ⟨10.1109/PESC.2008.4592442⟩ Communication dans un congrès hal-00467659v1
SiC Power Semiconductor Devices for new Applications in Power Electronics Dominique Planson,Dominique Tournier,Pascal Bevilacqua,Nicolas Dheilly,Hervé Morelet al. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩ Communication dans un congrès hal-00373016v1
Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters Dominique Bergogne,Hervé Morel,Dominique Tournier,Bruno Allard,Dominique Plansonet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2 Communication dans un congrès hal-00372982v1
Current limiting with SiC JFET structures Dominique Tournier,Dominique Bergogne,Asif Hamoud,Dominique Planson,Rami Mousaet al. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5 Communication dans un congrès hal-00373046v1
Electrical characterization of 5kV SiC bipolar diodes in switching transient regime Tarek Ben Salah,Damien Risaletto,Christophe Raynaud,Kamel Besbes,Sami Ghediraet al. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩ Communication dans un congrès hal-00369457v1
Modeling and high temperature characterization of SiC-JFET Rami Mousa,Dominique Planson,Hervé Morel,Bruno Allard,Christophe Raynaud IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩ Communication dans un congrès hal-00369420v1
Composant de protection série en SiC 450A de forte densité de puissance D. Tournier,Pascal Bevilacqua,Hervé Morel,Dominique Planson,Pierre Brosselardet al. 12ème colloque Electronique de Puissance du Futur, Jul 2008, Tours, France Communication dans un congrès hal-04624757v1
Contact ohmique de faible résistivité sur SiC-4H dopé type-P M Soueidan,Mihai Lazar,D. Tournier,Dominique Planson,Christophe Raynaudet al. 4eme colloque sur les Matériaux du Génie Electrique, May 2008, Toulouse, France Communication dans un congrès hal-04606381v1
Prospective sur les composants de puissance verticaux grand gap (Carbure de Silicium et Diamant) et leurs applications Michel Mermet-Guyennet,Hervé Morel,Dominique Planson,Henri Schneider,Jocelyn Achard 12e EPF (Electronique de Puissance du Futur), Jul 2008, Tours, France Communication dans un congrès hal-04606571v1
New Applications in Power Electronics Based on SiC Power Devices Hervé Morel,Dominique Bergogne,Dominique Planson,Bruno Allard,Régis Meuret ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩ Communication dans un congrès hal-02958610v1
Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies Tarek Ben Salah,Damien Risaletto,Christophe Raynaud,Kamel Besbes,Dominique Bergogneet al. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩ Communication dans un congrès hal-02958620v1
Onduleur à JFET sans diode de roue libre externe Dominique Bergogne,Pierre Lefranc,D. Tournier,Pascal Bevilacqua,Dominique Plansonet al. 11ème colloque Electronique de Puissance du Futur, Jul 2006, Grenoble, France Communication dans un congrès hal-04618123v1
High temperature operating converter Dominique Bergogne,Pascal Bevilacqua,Dominique Planson,Hervé Morel 4th CIPS, Jun 2006, Naples, Italy. pp.201-204 Communication dans un congrès hal-00413394v1
Les enjeux de la haute température Christian Martin,Hervé Morel,Dominique Bergogne,Bruno Allard 11ème EPF, Jul 2006, Grenoble, France Communication dans un congrès hal-00412423v1
Analytic thermal modelling of power electronic components: The Diffusive Representation Sabrine M'Rad,Bruno Allard,Anis Ammous,Nouri Massmoudi,Hervé Morel 4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.) Communication dans un congrès hal-00413392v1
300 °C operating junction temperature inverter leg investigations Dominique Bergogne,Pascal Bevilacqua,Sabrine M'Rad,Dominique Planson,Hervé Morelet al. EPE, Sep 2005, Dresden, Germany Communication dans un congrès hal-00413402v1
Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMS François Pêcheux,Bruno Allard,Christophe Lallement,Alain Vachoux,Hervé Morel ICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155 Communication dans un congrès hal-01486590v1
Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions Cyril Buttay,Olivier Brevet,Bruno Allard,Dominique Bergogne,Hervé Morel EPE, Sep 2005, Dresden, Germany. ⟨10.1109/EPE.2005.219271⟩ Communication dans un congrès hal-00138894v1
Bond Graph Modeling of Current Diffusion in Magnetic Cores Hervé Morel,Bruno Allard,Sabrine M'Rad,Cyril Buttay,Kaiçar Ammouset al. ICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91 Communication dans un congrès hal-00412621v1
Fast over-current protection of high power IGBT modules Pierre Lefranc,Dominique Bergogne,Hervé Morel,Bruno Allard,Jean-François Roche EPE, Sep 2005, Dresden, Germany Communication dans un congrès hal-00413400v1
Power converter's optimisation, analysis and design Hassan Helali,Dominique Bergogne,Hervé Morel,Bruno Allard,Pascal Bevilacqua EPE, Sep 2005, Dresden, Germany Communication dans un congrès hal-00413401v1
Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge Cyril Buttay,Dominique Bergogne,Hervé Morel,Bruno Allard,René Ehlingeret al. IEEE PESC, Jun 2003, Accapulco, Mexico. pp.901 - 906, ⟨10.1109/PESC.2003.1218175⟩ Communication dans un congrès hal-00413325v1
A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge Cyril Buttay,Dominique Bergogne,Hervé Morel,Bruno Allard,René Ehlingeret al. EPE, Sep 2003, Toulouse, France. pp.1-10 Communication dans un congrès hal-00413309v1
Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components Dominique Planson,S. Margenat,F. Nallet,Hervé Morel,Marie-Laure Locatelliet al. 3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩ Communication dans un congrès hal-04386919v1

Rapport (1)

Diagnostic de défauts du rotor de l'hélicoptère : supervision de cartes auto-organisatrices avec critère de convergence géométrique Hervé Morel [Rapport de recherche] LSIS. 2006 Rapport (rapport de recherche) hal-01488845v1

HDR (1)

Modélisation et simulation des composants et des systèmes électroniques de puissance Hervé Morel Energie électrique. INSA de Lyon, 1994 HDR tel-00731059v1