Hubert Renevier

Publications

Article dans une revue (54)

The role of Sb-over-Te ratio on the structural evolution of GeSbTe phase-change materials O. Daoudi,E. Nolot,M. Bernard,M. Dartois,M. Tessaireet al. Scientific Reports, 2025, 15 (1), pp.24387. ⟨10.1038/s41598-025-97185-y⟩ Article dans une revue hal-05564893v1
Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature Oumaima Daoudi,Emmanuel Nolot,Mélanie Dartois,Magali Tessaire,François Aussenacet al. physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2024, ⟨10.1002/pssr.202300448⟩ Article dans une revue hal-04493833v1
The effects of Sb/Te ratio on crystallization kinetics in Ge-rich GeSbTe phase-change materials O Daoudi,E Nolot,Y Mazel,M Dupraz,H Rousselet al. Journal of Applied Physics, 2024, 136 (15), pp.155105. ⟨10.1063/5.0221206⟩ Article dans une revue hal-04753176v1
Quantitative &lt;i&gt;in situ&lt;/i&gt; synchrotron X-ray analysis of the ALD/MLD growth of transition metal dichalcogenide TiS&lt;sub&gt;2&lt;/sub&gt; ultrathin films A. Yadav,W. Ma,P. Abi Younes,G. Ciatto,N. Gauthieret al. Nanoscale, 2023, 16, pp.1853-1864. ⟨10.1039/d3nr04222g⟩ Article dans une revue hal-04393869v1
Investigation of the transition of amorphous Ti-thiolate prepared by hybrid atomic layer deposition/molecular layer deposition into titanium disulfide ultrathin film Petros Abi Younes,Ashok-Kumar Yadav,Medet Zhukush,Van-Hoan Le,Hervé Rousselet al. Journal of Vacuum Science & Technology A, 2023, 41 (4), ⟨10.1116/6.0002448⟩ Article dans une revue hal-04138018v1
Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur-Mediated Sulfurization of Ultrathin SnO 2 Films Bhobnibhit Chatmaneerungcharoen,Mathias Fraccaroli,François Martin,Cyril Guedj,Emmanuel Nolotet al. Chemistry of Materials, 2022, 34 (13), pp.5842-5851. ⟨10.1021/acs.chemmater.2c00567⟩ Article dans une revue hal-04700699v1
In situ analysis of the nucleation of O-and Zn-polar ZnO nanowires using synchrotron-based X-ray diffraction Valentina Cantelli,Sophie Guillemin,Eirini Sarigiannidou,Francesco Carlá,Bruno Bériniet al. Nanoscale, 2022, 14 (3), pp.680-690. ⟨10.1039/D1NR06099F⟩ Article dans une revue hal-03539459v1
Short-range mechanisms in the creation of a ZnO/InGaAs interface Gianluca Ciatto,Evgeniy Skopin,Marie-Ingrid Richard,Dillon Fong,Hubert Renevier Crystal Growth & Design, 2022, 22 (8), pp.4768-4776. ⟨10.1021/acs.cgd.2c00137⟩ Article dans une revue hal-03776959v1
Transition Metal Dichalcogenide TiS2 Prepared by Hybrid Atomic Layer Deposition/Molecular Layer Deposition: Atomic-Level Insights with In Situ Synchrotron X-ray Studies and Molecular Surface Chemistry P. Abi Younes,E. Skopin,M. Zhukush,L. Rapenne,H. Rousselet al. Chemistry of Materials, 2022, 34 (24), pp.10885-10901. ⟨10.1021/acs.chemmater.2c02369⟩ Article dans une revue hal-03937100v1
In situ ellipsometry monitoring of TiO 2 atomic layer deposition from Tetrakis(dimethylamido)titanium(IV) and H 2 O precursors on Si and In 0.53 Ga 0.47 As substrates E.V. Skopin,K. Abdukayumov,P. Abi Younes,M. Anikin,H. Rousselet al. Thin Solid Films, 2021, 723, pp.138591. ⟨10.1016/j.tsf.2021.138591⟩ Article dans une revue hal-03318892v1
In Situ Ellipsometry Study of the Early Stage of ZnO Atomic Layer Deposition on In 0.53 Ga 0.47 As Evgeniy V Skopin,Jean-Luc Deschanvres,Hubert Renevier Physica Status Solidi A (applications and materials science), 2020, 217 (8), pp.1900831. ⟨10.1002/pssa.201900831⟩ Article dans une revue hal-03103267v1
In situ x-ray studies of the incipient ZnO atomic layer deposition on In 0.53 Ga 0.47 As E. Skopin,L. Rapenne,J.L. Deschanvres,H. Renevier,E. Blanquetet al. Physical Review Materials, 2020, 4 (4), ⟨10.1103/PhysRevMaterials.4.043403⟩ Article dans une revue hal-02994857v1
Nanoscale x-ray investigation of composition fluctuations in AlGaN nanowires M Belloeil,M Proietti,H Renevier,Bruno Daudin Nanotechnology, 2020, 31 (37), pp.375709. ⟨10.1088/1361-6528/ab94e1⟩ Article dans une revue hal-02994838v1
Modified strain and elastic energy behavior of Ge islands formed on high-miscut Si(0 0 1) substrates L.A.B. Marçal,M.-I. Richard,L. Persichetti,V. Favre-Nicolin,H. Renevieret al. Applied Surface Science, 2019, 466, pp.801-807. ⟨10.1016/j.apsusc.2018.10.094⟩ Article dans une revue hal-02151196v1
Resilience of Cuprous Oxide under Oxidizing Thermal Treatments via Magnesium Doping Joao Resende,Odette Chaix-Pluchery,Mauro F Rovezzi,Yoann Malier,Hubert Renevieret al. Journal of Physical Chemistry C, 2019, 123 (14), pp.8663-8670. ⟨10.1021/acs.jpcc.9b00408⟩ Article dans une revue hal-02151203v1
XAFS atomistic insight of the oxygen gettering inTi/HfO2 based OxRRAM R. Viennet,H. Roussel,L. Rapenne,J. L. Deschanvres,Hubert Renevieret al. Physical Review Materials, 2018, 2 (5), pp.055002 Article dans une revue hal-01979131v1
The initial stages of ZnO atomic layer deposition on atomically flat In$_{0.53}$Ga$_{0.47}$As substrates Evgeniy Skopin,Laetitia Rapenne,Hervé Roussel,Jean-Luc Deschanvres,Elisabeth Blanquetet al. Nanoscale, 2018, ⟨10.1039/c8nr02440e⟩ Article dans une revue hal-01819188v1
Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition Sophie Guillemin,Romain Parize,Joseph Carabetta,Valentina Cantelli,David Albertiniet al. Nanotechnology, 2017, 28 (9), pp.095704. ⟨10.1088/1361-6528/aa5657⟩ Article dans une revue hal-02073055v1
Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition Manh-Hung Chu,Liang Tian,Ahmad Chaker,Evgenii Skopin,Valentina Cantelliet al. Journal of Electronic Materials, 2017, 46 (6), pp.3512 - 3517. ⟨10.1007/s11664-017-5448-2⟩ Article dans une revue hal-01705058v1
SIRIUS: A new beamline for in situ X-ray diffraction and spectroscopy studies of advanced materials and nanostructures at the SOLEIL Synchrotron G. Ciatto,M. H. Chu,Pascal Fontaine,N. Aubert,Hubert Renevieret al. Thin Solid Films, 2016, 617, Part A, pp.48-54. ⟨10.1016/j.tsf.2016.03.069⟩ Article dans une revue hal-01456364v1
Polarity in GaN and ZnO: Theory, measurement, growth, and devices Jesus Zuniga-Perez,Vincent Consonni,Liverios Lymperakis,Xiang Kong,Achim Trampertet al. Applied Physics Reviews, 2016, 3 (4), pp.041303. ⟨10.1063/1.4963919⟩ Article dans une revue hal-01456351v1
An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayers Manh Hung Chu,Liang Tian,Ahmad Chaker,Valentina Cantelli,Toufik Ouledet al. Crystal Growth & Design, 2016, 16 (9), pp.5339-5348. ⟨10.1021/acs.cgd.6b00844⟩ Article dans une revue hal-01434956v1
Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition R. Boichot,L. Tian,M.-I. Richard,A. Crisci,A. Chakeret al. Chemistry of Materials, 2016, 28 (2), pp.592-600. ⟨10.1021/acs.chemmater.5b04223⟩ Article dans une revue hal-01366565v1
XTOP: high-resolution X-ray diffraction and imaging Vincent Favre-Nicolin,Jose Baruchel,Hubert Renevier,Joel Eymery,András Borbély Journal of Applied Crystallography, 2015, 48 (Part : 3), pp.620-620. ⟨10.1107/S160057671500895X⟩ Article dans une revue emse-01500752v1
Anisotropic In distribution in InGaN core-shell nanowires Cédric Leclere,N. A. Katcho,G. Tourbot,B. Daudin,M. G. Proiettiet al. Journal of Applied Physics, 2014, 116 (1), pp.013517. ⟨10.1063/1.4886756⟩ Article dans une revue hal-01067036v1
Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up technique Ludovic Dupre,T. Gorisse,A. L. Lebranchu,T. Bernardin,Pascal Gentileet al. Nanoscale Research Letters, 2013, 8, pp.123. ⟨10.1186/1556-276x-8-123⟩ Article dans une revue hal-01067029v1
Structural and Optical Properties of AlxGa1-xN nanowires Aurélie Pierret,Catherine Bougerol,Martien den Hertog,Bruno Gayral,Mathieu Kociaket al. physica status solidi (RRL) - Rapid Research Letters (pss RRL), 2013, 7 (10), pp.868. ⟨10.1002/pssr.201308009⟩ Article dans une revue hal-00945864v1
Low temperature oxidation mechanisms of nanocrystalline magnetite thin film F. Bourgeois,P. Gergaud,Hubert Renevier,Cédric Leclere,Guy Feuillet Journal of Applied Physics, 2013, 113 (1), pp.013510. ⟨10.1063/1.4772714⟩ Article dans une revue hal-01067026v1
Growth, structural and optical properties of AlGaN nanowires in the whole composition range A. Pierret,Catherine Bougerol,A. Cros,Hubert Renevier,B. Gayralet al. Nanotechnology, 2013, 24 (11), pp.115704. ⟨10.1088/0957-4484/24/11/115704⟩ Article dans une revue hal-00854134v1
Strain assisted inter-diffusion in GaN/AlN quantum dots C. Leclere,Vincent Fellmann,Catherine Bougerol,D. Cooper,Bruno Gayralet al. Journal of Applied Physics, 2013, 113 (3), pp.034311. ⟨10.1063/1.4775587⟩ Article dans une revue hal-00788825v1
Diffraction Anomalous Fine Structure study and atomistic simulation of Ge/Si nanoislands. N.A. Katcho,M.I. Richard,M. G. Proietti,Hubert Renevier,Cédric Leclereet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 284, pp.58. ⟨10.1016/j.nimb.2011.08.003⟩ Article dans une revue istex hal-01067033v1
In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy Karine Hestroffer,Cedric Leclere,V. Cantelli,Catherine Bougerol,Hubert Renevieret al. Applied Physics Letters, 2012, 100, pp.212107. ⟨10.1063/1.4721521⟩ Article dans une revue hal-00857977v1
Gold Contamination in VLS-Grown Si Nanowires: Multiwavelength Anomalous Diffraction Investigations Ludovic Dupre,Denis Buttard,Cédric Leclere,Hubert Renevier,Pascal Gentile Chemistry of Materials, 2012, 24 (23), pp.4511-4516. ⟨10.1021/cm301739n⟩ Article dans une revue hal-01067028v1
Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures. V. Favre-Nicolin,M. G. Proietti,Cédric. Leclere,N. A. Katcho,M.I. Richardet al. The European Physical Journal. Special Topics, 2012, 208, pp.189. ⟨10.1140/epjst/e2012-01619-x⟩ Article dans une revue hal-01067030v1
Fast computing of scattering maps of nanostructures using graphical processing units Vincent Favre-Nicolin,Johann Coraux,Marie-Ingrid Richard,Hubert Renevier Journal of Applied Crystallography, 2011, 44 (3), pp.635-640. ⟨10.1107/S0021889811009009⟩ Article dans une revue hal-00533019v1
Composition and Strain of Ge Domes on Si(001) close to the Dome/Susbtrate Interface. N.A Katcho,M.I. Richard,M.G. Proietti,Hubert Renevier,Cédric Leclereet al. EPL - Europhysics Letters, 2011, 93, pp.66004. ⟨10.1209/0295-5075/93/66004⟩ Article dans une revue hal-01067032v1
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature Rafael Mata,Karine Hestroffer,J. Budagosky,A. Cros,Catherine Bougerolet al. Journal of Crystal Growth, 2011, 334 (1), pp.177-180. ⟨10.1016/j.jcrysgro.2011.08.015⟩ Article dans une revue istex hal-01005934v1
Grazing Incidence X-ray Diffraction investigation of strains in silicon nanowires obtained by gold catalytic growth D. Buttard,P. Gentile,Hubert Renevier Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2011, 605 (5-6), pp.570-576. ⟨10.1016/j.susc.2010.12.019⟩ Article dans une revue hal-01067027v1
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) Karine Hestroffer,Cedric Leclere,Catherine Bougerol,Hubert Renevier,B. Daudin Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (24), pp.245302. ⟨10.1103/PhysRevB.84.245302⟩ Article dans une revue hal-00858015v1
Growth mechanism of catalyst-free 0001 GaN and AlN nanowires on Si by molecular beam epitaxy O. Landre,V. Fellmann,P. Jaffrennou,C. Bougerol,Hubert Renevieret al. Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7 (7-8), pp.2246-2248. ⟨10.1002/pssc.200983613⟩ Article dans une revue istex hal-01067035v1
The structural properties of GaN/AlN core-shell nanocolumn heterostructures K. Hestroffer,R. Mata,D. Camacho,C. Leclere,G. Tourbotet al. Nanotechnology, 2010, 21 (41), pp.415702 -415709. ⟨10.1088/0957-4484/21/41/415702⟩ Article dans une revue istex hal-01067031v1
Molecular beam epitaxy growth and optical properties of AlN nanowires Olivier Landré,Vincent Fellmann,P. Jaffrenou,Catherine Bougerol,Hubert Renevieret al. Applied Physics Letters, 2010, 96 (6), pp.61912. ⟨10.1063/1.3315943⟩ Article dans une revue hal-01005659v1
Elastic strain relaxation in GaN/AlN nanowire superlattice Olivier Landré,D. Camacho,Catherine Bougerol,Yann-Michel Niquet,Vincent Favre-Nicolinet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (15), pp.153306. ⟨10.1103/PhysRevB.81.153306⟩ Article dans une revue hal-01005666v1
Structural properties of Ge/Si(001) nano-islands by diffraction anomalous fine structure and multiwavelength anomalous diffraction M. I. Richard,N. A. Katcho,M. G. Proietti,Hubert Renevier,V. Favre-Nicolinet al. The European Physical Journal. Special Topics, 2009, 167 (1), pp.3-10. ⟨10.1140/epjst/e2009-00929-4⟩ Article dans une revue hal-01067038v1
Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy O. Landre,C. Bougerol,Hubert Renevier,Bruno Daudin Nanotechnology, 2009, 20 (41), pp.415602-415610. ⟨10.1088/0957-4484/20/41/415602⟩ Article dans une revue istex hal-01067034v1
Diffraction anomalous fine structure study of iron/iron oxide nanoparticles C. Meneghini,F. Boscherini,L. Pasquini,Hubert Renevier Journal of Applied Crystallography, 2009, 42, pp.642-648. ⟨10.1107/s002188980902353x⟩ Article dans une revue istex hal-01067037v1
Anisotropic strain relaxation in a-plane GaN quantum dots S. Founta,Johann Coraux,D. Jalabert,C. Bougerol,F. Rolet al. Journal of Applied Physics, 2007, 101 (6), pp.063541. ⟨10.1063/1.2713937⟩ Article dans une revue hal-04038024v1
Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence A. Letoublon,V. Favre-Nicolin,Hubert Renevier,M.G. Proletti,C. Monatet al. Physica B: Condensed Matter, 2005, 357, pp.11-15 Article dans une revue hal-00154906v1
Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence X-ray anomalous diffraction Antoine Létoublon,Vincent Favre-Nicolin,Hubert Renevier,Proietti M.G.,C. Monatet al. Physical Review Letters, 2004, 92 (18), pp.186101. ⟨10.1103/PhysRevLett.92.186101⟩ Article dans une revue hal-00085995v1
Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures S. Grenier,A. Letoublon,M.G. Proeitti,Hubert Renevier,L. Gonzalezet al. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003, 200, pp.24-33 Article dans une revue hal-00146613v1
Diffraction Anomalous Fine Structure spectroscopy at the beamline BM2 at the European Synchrotron Radiation Facility Hubert Renevier,S. Grenier,S. Arnaud,J. F. Berar,B. Caillotet al. Journal of Synchrotron Radiation, 2003, 10, pp.435-444 Article dans une revue hal-00122641v1
X-ray anomalous scattering investigations on the charge order in (formula presented) S. Grenier,A. Toader,J.E. Lorenzo,Y. Joly,B. Grenieret al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65 (18), pp.1-4. ⟨10.1103/PhysRevB.65.180101⟩ Article dans une revue hal-04897589v1
DAFS Study of Strained III-V Epitaxial Semiconductors M. Proietti,Hubert Renevier,J. Berar,V. Dalakas,J. Hodeauet al. Journal de Physique IV Proceedings, 1997, 7 (C2), pp.C2-749-C2-751. ⟨10.1051/jp4:1997225⟩ Article dans une revue istex jpa-00255304v1
Application of DAFS Spectroscopy to Study the Variations of Fe local structure in a Fe/Ir(100) Superlattice Hubert Renevier,J. Hodeau,V. Dalakas,P. Wolfers,J. Béraret al. Journal de Physique IV Proceedings, 1997, 7 (C2), pp.C2-741-C2-743. ⟨10.1051/jp4:1997223⟩ Article dans une revue istex jpa-00255302v1

Communication dans un congrès (21)

In situ study of the synthesis of lamellar metal chalcogenides by alternating deposition of organic & inorganic molecules Hubert Renevier,Petros Abi Younes,Evgeniy V Skopin,Medet Zhukush,Laetitia Rapenneet al. Opto-X-Nano, Nov 2024, Okayama, Japan Communication dans un congrès hal-04937158v1
The influence of Sb/Te ratio on the crystallization dynamic of GeSbTe alloys Emmanuel Nolot,Gabriele Navarro,Hubert Renevier,Frederic Fillot,Jing Liet al. CIMTEC 2024, Jun 2024, Montecatini Terme, Italy Communication dans un congrès cea-04687388v1
In situ x-ray quantitative investigation of the growth of 2D TiS2 transition metal dichalcogenide prepared by hybrid ALD/MLD-Chem2DMat Ashok-Kumar Yadav,Ma Weiling,Petros Abi Younes,Gianluca Ciatto,Nathanaelle Schneideret al. European conference on chemistry of 2-D materials (Chem2Dmat2023), May 2023, Bologne, Italy Communication dans un congrès hal-04762007v1
Lab-scale Hard X-ray Photoelectron Spectroscopy (HAXPES) characterization of Transition Metal Dichalcogenide TiS$_2$ grown by Molecular Layer Deposition and thermal annealing Nicolas Gauthier,Petros Abi Younes,E.V. Skopin,G. Ciatto,N. Aubertet al. ECASIA 2022 - European Conference on Application of Surface and Interface Analysis, May 2022, Limerick, Ireland Communication dans un congrès cea-04517800v1
Lab-scale Hard X-ray Photoelectron Spectroscopy (HAXPES) study of Transition Metal Dichalcogenide TiS$_2$ prepared by Molecular Layer Deposition and thermal annealing Nicolas Gauthier,Petros Abi Younes,Skopin E.V.,Ciatto G.,Aubert N.et al. EVC 16 - 16th European Vaccum Conference, SFV, Nov 2021, Marseille, France Communication dans un congrès cea-04513349v1
In situ X-ray studies of the early stage of ZnO Atomic Layer Deposition on InGaAs E. Skopin,L. Rapenne,J.L. Deschanvres,E. Blanquet,L. Pithanet al. Join Euro CVD 22 - Baltic ALD16, Jun 2019, Luxembourg, Luxembourg Communication dans un congrès hal-04820226v1
SIRIUS at Synchrotron SOLEIL: a beamline suitable for in situ x-ray characterization of the ALD of advanced materials G. Ciatto,M. H. Chu,P. Fontaine,N. Aubert,Hubert Renevieret al. EMRS fall Meeting – symposium Q, Sep 2017, Warsov, Poland Communication dans un congrès hal-02016923v1
Visualizing the incipient Atomic Layer Deposition of ZnO ultra thin films on In0.53Ga0.47As for tailoring contact resistivity E. Skopin,M.I. Richard,L. Rapenne,A. Crisci,E. Blanquetet al. E-MRS Spring 2017, May 2017, Strasbourg, France Communication dans un congrès hal-02016907v1
In situ X-ray studies during the early stage of ZnO Atomic Layer Deposition on InGaAs E Skopin,L. Rapenne,H. Roussel,J.-L. Deschanvres,A. Crisciet al. Rayons X & Matière, Nov 2017, Villeneuve d'Ascq, France Communication dans un congrès hal-02016916v1
An atomistic view of the incipient growth of zinc oxide by in-situ x-ray absorption spectroscopy, Workshop on synchrotron radiation to study atomic layer deposition M. H. Chu,L. Tian,A. Chaker,V. Cantelli,T. Ouledet al. Workshop on synchrotron radiation to study atomic layer deposition, Jun 2016, ALBA synchrotron, Barcelona, Spain Communication dans un congrès hal-01453370v1
An Atomistic View of the Incipient Growth of Zinc Oxide by in-situ Xray Absorption Spectroscopy” M. H. Chu,L. Tian,A. Chaker,V. Cantelli,T. Ouledet al. International workshop Synchrotron radiation and ALD, Jun 2016, Barcelone, Spain Communication dans un congrès hal-02016930v1
In Situ X-ray Studies of Crystalline Texture and Strain During the Initial Stages of ZnO Atomic Layer Deposition R. Boichot,L. Tian,A. Claudel,E. Skopin,M.I. Richardet al. Workshop on synchrotron radiation to study atomic layer deposition, Jun 2016, ALBA synchrotron, Barcelona, Spain Communication dans un congrès hal-01453376v1
Caractérisation par ellipsometrie in situ de la croissance de ZnO. Jean-Luc Deschanvres,Evgeni Skopin,Viet Huong Nguyen,Hubert Renevier,David Muñoz-Rojaset al. RAFALD Workshop, Nov 2016, Chatou, France Communication dans un congrès hal-02016946v1
In-situ synchrotron analysis of the very first ALD growth steps of ZnO on a-SiO2 and c-plane Al2O3 R. Boichot,A. Crisci,S. Lay,E. Blanquet,L. Tianet al. Workshop RAFALD 2015, Nov 2015, Grenoble, France Communication dans un congrès hal-02016969v1
In Situ X-Ray Scattering and Optical Substrate Curvature Studies of ZnO Growth by Atomic Layer and Metal Organic Chemical Vapor Deposition Hubert Renevier,R. Boichot,A. Crisci,L. Tian,Ahmad Chakeret al. MRS spring meeting, Apr 2015, San Francisco, United States Communication dans un congrès hal-02016958v1
The effect of the Ti getter layer and annealing on HfO2-based resistive random access memory studied by X-ray absorption, X-ray diffraction and electrical measurements R. Viennet,Hubert Renevier,Eric Jalaguier,V. Jousseaume,P. Gononet al. E-MRS Spring Meeting,, Symp. M, May 2015, Lille, France Communication dans un congrès hal-02016962v1
In-situ grazing incidence x-ray scattering studies of ZnO nanowire growth by chemical bath depositioncontribution. Valentina Cantelli,Sophie Guillemin,Hubert Renevier,Dillon Fong,F. Carlàet al. MRS Spring meeting, Apr 2014, San Francisco, United States Communication dans un congrès hal-02017009v1
Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence A. Letoublon,V. Favre-Nicolin,Hubert Renevier,M.G. Proietti,C. Monatet al. 2004, pp.11-15 Communication dans un congrès hal-00140720v1
Grazing incidence diffraction anomalous fine structure : a tool for investigating strain distribution and interdiffusion in InAs/InP quantum wires A. Letoublon,Hubert Renevier,M.G. Proietti,C. Priester,M.L. Gonzalezet al. 2003, pp.541-542 Communication dans un congrès hal-00149938v1
Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures S. Grenier,A. Letoublon,M.G. Proietti,Hubert Renevier,L. Gonzalezet al. 2002, pp.24-33 Communication dans un congrès hal-00149685v1
Study of InAs/InP using grazing incidence diffraction anomalous fine structure A. Letoublon,M. Proietti,C. Priester,Hubert Renevier,C. Delerue Ecole Prédoctorale sur la Physique Mésoscopique, 2001, Les Houches, France Communication dans un congrès hal-00152576v1

Poster de conférence (5)

HAXPES characterization of Transition ultra thin Metal Dichalcogenide TiS2 grown by Molecular Layer Deposition and thermal annealing Nicolas Gauthier,Petros Abi Younes,Evgeniy V Skopin,Gianluca Ciatto,N Aubertet al. Journées Natiobales des Spectroscopies de PhotoEmission (JNSPE), May 2024, Lille, France Poster de conférence hal-04761988v1
Lab-scale Hard X-ray Photoelectron Spectroscopy (HAXPES) characterization of Transition Metal Dichalcogenide TiS2 grown by hybrid Atomic Layer Deposition/Molecular Layer Deposition and thermal annealing Nicolas Gauthier,P. Abi Younes,E.V. Skopin,G. Ciatto,N. Aubertet al. JNSPE 2023, May 2023, Sophia Antipolis, France. , 2023 Poster de conférence cea-04517818v1
Polarity-Dependent Growth and Properties of ZnO Nanorods by Chemical Bath Deposition for Piezoelectric Devices Vincent Consonni,Estelle Appert,Eirini Sarigiannidou,Hubert Renevier,Fabrice Donatiniet al. Journées Nationales des Nanofils Semiconducteurs (J2N) 2022, Sep 2022, Nice, France. Poster de conférence hal-04726120v1
In situ X-ray studies of lamellar metal chalcogenides GaS$_x$ prepared by atomic layer deposition/molecular layer deposition P. Abi Younes,T. Iung,N. Aubert,A.-K. Adav,G. Ciattoet al. RAFALD 2022 - The 8th Edition of RAFALD Workshop, Nov 2022, Caen, France. , 2022 Poster de conférence cea-04517732v1
Lab-scale Hard X-ray Photoelectron Spectroscopy (HAXPES) study of Transition Metal Dichalcogenide TiS2$_$ prepared by Molecular Layer Deposition and thermal annealing Nicolas Gauthier,P. Abi Younes,E.V. Skopin,G. Ciatto,N. Aubertet al. Graphen 21 - The 11th edition of Graphene Conference series, the largest European Event in Graphene and 2D Materials, Oct 2021, Grenoble, France. , 2021 Poster de conférence cea-04517629v1

Chapitre d'ouvrage (1)

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