jacky even
Professor INSA Rennes
https://www.insa-rennes.fr/
FOTON Institute (CNRS lab. UMR 6082)
http://foton.cnrs.fr/v2016/
122
Documents
Identifiants chercheurs
- jacky-even
- ResearcherId : C-6212-2008
- 0000-0002-4607-3390
- Google Scholar : https://scholar.google.fr/citations?user=wZSGnjYAAAAJ&hl=fr
- IdRef : 076470482
- ResearcherId : http://www.researcherid.com/rid/C-6212-2008
Site web
- http://www.iufrance.fr/les-membres-de-liuf/membre/1913-jacky-even.html
Présentation
1984-1988: ENS Cachan (now ENS Paris-Saclay): Physics
1987-1988: Agrégation in Physics, Master Degree in Liquid Physics
1989-1992: University Paris VI/ Rennes I, PhD Thesis
1992-1999: Associate Professor (University Rennes I), Habilitation Degree
1999-now: Professor, Institut National des sciences Appliquées (INSA) de Rennes
1999-now: Creation and head of FOTON-INSA simulation team https://www.institut-foton.eu/physique-des-materiaux-et-dispositifs-perovskites/
2006-2009: Head of Materials Science and Nanotechnology Department, INSA Rennes
2010-2012: Director of Education, INSA Rennes
2018-2023: Senior member of IUF (Institut Universitaire de France) (http://www.iufrance.fr/les-membres-de-liuf/membre/1913-jacky-even.html)
2019/2020/2021/2022/2023: Highly Cited Researcher (Clarivate Analytics) https://clarivate.com/highly-cited-researchers/
2022 [Jean-Ricard Prize of the French Physical Society ](https://www.sfpnet.fr/jacky-even-laureat-du-prix-jean-ricard-2022-de-la-sfp)
2023-now: Re-elected Senior member of IUF
2013 : Video of invited presentation about Halide perovskites (in French):[videos-jnpv\_2013](http://webcast.in2p3.fr/videos-jnpv_2013_avancees_recentes_dans_le_domaine_des_perovskites_hybrides_pour_les_applications_photovoltaiques__jacky_even) containing among others: the first theoretical predictions of exciton screening in halide perovskites, importance of spin-orbit coupling, Rashba-Dresselhaus effect, symmetry analyses, first predictions of Kane parameters and results published in J. Even et al, Phys. Rev B 2012, J. Phys. Chem. Lett. 2013, J. Phys. Chem. C 2014, RRL Solar 2014, ChemPhysChem 2014. More presentations (in French) in 2016: https://videosjnpv2016.geeps.centralesupelec.fr/files/hybrides-organiques-perovskites_1.mp4. and 2021: https://videosjnpv2021.geeps.centralesupelec.fr/files/even.mp4
The prediction in 2013 (https://hal.science/hal-04500208) of low exciton binding energy and high effective dielectric constant of primary importance for the perovskite photovoltaic mechanism was finally published in 2014 (Even et al J. Phys. Chem. C 118, 11566, 2014) and exactly checked experimentally in 2015 by H. Snaith and coworkers at LNCMI Toulouse and Oxford University (Miyata et al, Nature Physics 11, 582, 2015)
Selected papers (2016-2023):
H. Tsai et al, Nature 536, 312 (2016)
W Nie et al, Nature Comm. 5, 11574 (2016)
H. Fang et al, Science Adv. 2, e1600534 (2016)
H. Fang et al, Light Science and Appl. 5, e16056 (2016)
A. Neukirch et al, Nano Letters 16, 3809 (2016)
L. Pedesseau et al, ACS Nano 10, 9776 (2016)
J. Even et al, Nanoscale 8, 6222 (2016)
D. Sapori et al, Nanoscale 8, 6369 (2016)
C. Robert et al, Phys. Rev.B 94, 075445 (2016)
J.C. Blancon et al, Science eaal4211 (2017)
M. Fu et al, Nano Letters 17, 2895 (2017)
H. Tsai et al, Adv. Ener. Mat. 7, 1602159 (2017)
C. Soe et al, J. Am. Chem. Soc. 139, 6297 (2017)
L. Mao et al, J. Am. Chem. Soc. 139, 11956 (2017)
S. Yun et al, Ang. Chem. Int. Ed. 56, 15806 (2017)
M.D. Smith et al, Chem. Sci. 8, 1960 (2017)
C.C. Stoumpos et al, Chem Cell 2, 427 (2017)
K. Appavoo et al, Phys. Rev. B 96, 195308 (2017)
H. Tsai et al, Science 360, 67 (2018)
C. Katan et al, Nature Materials 17, 377 (2018)
H. Fang et al, Nature Comm. 9, 243 (2018)
H. Tsai et al, Nature Comm. 9, 2130 (2018)
J.C. Blancon et al, Nature Comm. 9, 2554 (2018)
M. Fu et al, Nature Comm. 9, 3318 (2018)
W. Nie et al, Adv. Mat. 30, 1703879 (2018)
H. Tsai et al, Adv. Mat. 30, 1704217 (2018)
C. Soe et al, Adv. Ener. Mat. 8, 1700979 (2018)
H. Fang et al, Adv. Func. Mat. 28,1800305 (2018)
L. Zhou et al, ACS Energy Lett. 3, 787 (2018)
L. Mao et al, J. Am. Chem. Soc. 140, 3775 (2018)
X. Li et al, J. Am. Chem. Soc. 140, 12226 (2018)
L. Mao et al, J. Am. Chem. Soc. 140, 13078(2018)
M. Kepenekian et al, Nano Letters 18, 5603 (2018)
B. Traore et al, ACS Nano 12, 3321 (2018)
A. Marronnier et al, ACS Nano 12, 3477 (2018)
A. Ferreira et al, Phys. Rev. Lett. 121, 085502 (2018)
J. Leveillee et al, Phys. Rev. Mat. 2, 105406 (2018)
A. Gheno et al, RRL Solar 2, 1800191 (2018)
C. Katan et al, Chem. Rev. 119, 3140 (2019)
P. Tamarat et al, Nature Materials 18, 717 (2019)
C. Wei et al, Nature Comm. 10, 5342 (2019)
J. Leveillée et al, Nano Letters 19, 8732 (2019)
Soe et al, Proc. Nat. Acad. Sci. 116, 58 (2019)
N. Devesa Canicoba et al, ACS Mat. Lett. 1, 633 (2019)
J. M. Hoffman et al, J. Am. Chem. Soc. 141, 10661 (2019)
X. Li et al, J. Am. Chem. Soc. 141, 12880 (2019)
L. Mao et al, Chem Cell 5, 2593 (2019)
J. C. Blancon et al, Nature Nanotechnology,15, 969 (2020)
P. Tamarat et al, Nature Comm., 11, 6001 (2020)
H. Fang et al, Adv. Func. Mat. 29,1907979 (2020)
L. Chen et al, ACS Nano, 14,13127 (2020)
S. Kahman et al, ACS Ener. Lett., 5, 2512 (2020)
E. Kinigstein et al, ACS Mat. Lett. 2, 1360 (2020)
B. Traore et al, ACS Mat. Interf. 12, 6633 (2020)
C. Quarti et al, J. Phys. Mat. 3, 042001 (2020)
X. Fu et al, J. Am. Chem. Soc. 142, 4008 (2020)
T. Schmitt et al, J. Am. Chem. Soc. 142, 5060 (2020)
X. Li et al, J. Am. Chem. Soc. 142, 6625 (2020)
L. Mao et al, J. Am. Chem. Soc. 142, 8342 (2020)
I. Spanopoulos et al, J. Am. Chem. Soc. 142, 9028 (2020)
X. Li et al, J. Am. Chem. Soc. 142, 11482 (2020)
G. Roma et al, Phys. Rev. Mat. 4, 092402 (2020)
A. Ferreira et al, Comm. Phys. 3, 48 (2020)
F. Liu et al, Nature Comm., 12, 673 (2021)
S. Sidhik et al, Adv. Mat. 2007176 (2021)
A. Torma et al, ACS Nano 15, 20550 (2021)
S. Sidhik et al, Cell Rep. Phys. Sci. 2, 100601 (2021)
V. Diez‐cabanes et al, Adv. Opt. Mat., 2001832 (2021)
B. Song et al, ACS Mat. Lett. 3, 148 (2021)
F. Ledee et al, Materials Horizons 8,1547 (2021)
L. Gao et al, J. Am. Chem. Soc. 143, 12063 (2021)
S. Sidhik et al, Science 377, 1425 (2022)
Q. Akkerman et al, Science 377, 1406 (2022)
W. Li et al, Nature Nanotechnology 17, 45 (2022)
S. Cuthriell et al, Adv. Mat. 2202709 (2022)
Y. Qin et al, Adv. Mat. 2201666 (2022)
B. Traore et al, ACS. Ener. Lett. 7, 349 (2022)
L. Chen et al, Adv. Sci. 9, 2101661 (2022)
X. Li et al, J. Am. Chem. Soc. 144, 3902 (2022)
E. Vasileiadou et al, J. Am. Chem. Soc. 144, 6390 (2022)
B. Hehlen et al, Phys. Rev. B 105, 024306 (2022)
R. Nazarov et al, Phys. Rev. B 105, 245202 (2022)
L. Chen et al, Phys. Rev. B 106, 165310 (2022)
B. Traore et al, Phys. Rev. Mat. 6, 014604 (2022)
B. Cucco et al, RRL Solar 6, 2200718 (2022)
H. Zhang et al, Nature Physics, 19, 545 (2023)
J. Hou et al, Nature Synth., DOI : 10.1038/s44160-023-00422-3
P. Tamarat et al, Nature Comm., 14, 229 (2023)
A. Fehr et al, Nature Comm., 14, 3797 (2023)
S. Liu et al, Sci. Adv., 9, eadh2255 (2023)
C. Zhu et al, Adv. Mat. 2208354 (2023)
A. Abhervé et al, Adv. Mat. 2305784 (2023)
I. Metcalf et al, Chem. Rev., 123, 9565 (2023)
D. Dirin et al, Nano Letters (2023)
M. Zacharias et al, Phys. Rev. B, 108, 035155 (2023)
M. Zacharias et al, npj Comp. Mat., 9, 153 (2023)
P. Fu et al, J. Am. Chem. Soc. 145, 15997 (2023)
Z.G. Li et al, ACS Ener.Lett., 8, 3016 (2023)
B. Cucco et al, ACS. Mat. Lett. 5, 52 (2023)
C. Quarti et al, Adv. Opt. Mat. 2202801 (2023)
Z. Tang et al, Adv. Opt. Mat. 2301282 (2023)
A. Matuhina et al, Nanoscale, 15, 14764 (2023)
P. Basera et al, Nanoscale, 15, 11884 (2023)
Book Chapters (J. Even et al) in :
"Unconventional Thin Film Photovoltaics", RCS Publishing (2016)
"Semiconductor Nanocrystals and Metal Nanoparticles: Physical Properties and Device Applications", CRC Press (2016)
"Theoretical Modeling of Organohalide Perovskites for Photovoltaic Appl.", CRC Press (2017)
"Halide Perovskites - Photovoltaics, Light Emitting Devices and Beyond", Wiley (2018)
Publications
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Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics.44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
Communication dans un congrès
hal-03796793v1
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Effect of light-induced lattice expansion in high-efficiency halide perovskites solar cellsSPIE Photonics West - OPTO 2020, Feb 2020, San Francisco, United States. pp.11281-84
Communication dans un congrès
hal-02879649v1
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Multiband electronic transitions in 2D and 3D hybrid perovskites: recent resultsEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Communication dans un congrès
hal-01933563v1
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Numerical investigation of the effect of interface conditions in the perovskite-based single junction and tandem solar cells9th Integrated PhotoVoltaic Technical Conference (i-PVTC 2018), Sep 2018, Cassis, France
Communication dans un congrès
hal-03148326v1
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Critical role of Interface and perovskite lattice in high-efficiency and photostable solar cellsSPIE Photonics West - OPTO 2018, Jan 2018, San Francisco, United States
Communication dans un congrès
hal-01723197v1
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Critical role of Interface and perovskite lattice in high-efficiency and photostable solar cellsElectronic and Structural Dynamics in Hybrid Perovskites: Theory Meets Experiment, Telluride Science Research Center, Jul 2018, Telluride, United States
Communication dans un congrès
hal-02419445v1
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Critical role of Interface and perovskite lattice in high-efficiency and photostable solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France
Communication dans un congrès
hal-01660157v1
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Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark
Communication dans un congrès
hal-01574953v1
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A new approach to the modelling of Kelvin Probe Microscopy of heterostructures in dark and under illumination17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark. Post-Deadline Paper
Communication dans un congrès
hal-01574959v1
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Dielectric properties of hybrid perovskites and drift-diffusion modelling of perovskite/silicon tandem cellsSPIE Photonics West - OPTO 2016, Feb 2016, San Francisco, United States. pp.9743-21
Communication dans un congrès
hal-01397746v1
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Advanced concepts of photovoltaics based on III-V compounds16th International Conference of Physical Chemistry (ROMPHYSCHEM-16), Sep 2016, Galaţi, Romania
Communication dans un congrès
hal-01496667v1
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Plastic crystal behavior, tight-binding modelling and low energy phonon spectroscopy in hybrid perovskites crystalsHybrid and Organic Photovoltaics Conference (HOPV 2016), Jun 2016, Swansea, United Kingdom
Communication dans un congrès
hal-01420429v1
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First stage results on III-V/Si tandem cells using GaAsPN dilute-nitrideEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Communication dans un congrès
hal-01496924v1
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Low energy phonon spectroscopy and translation-rotation coupling in hybrid perovskites crystals2è Journées Pérovskites Hybrides (JPH 2016), May 2016, Rennes, France
Communication dans un congrès
hal-01416169v1
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Wide optical band gap Al4SiC4European Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203372v1
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Optical properties of wide band gap Al4SiC4: experimental and theoretical approachesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01162159v1
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Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania
Communication dans un congrès
hal-01497190v1
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Towards the III-V/Si CPV on Si substratesEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01403375v1
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Numerical and experimental ongoing on III-V/Si high-efficiency tandem solar cellEuropean Congress and Exhibition on Advanced Materials and Processes (EUROMAT 2015), Sep 2015, Warsaw, Poland
Communication dans un congrès
hal-01203374v1
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Monolithic integration of GaAsPN dilute-nitride compounds on silicon substrates: toward the III-V/Si tandem solar cellSPIE Photonics West - OPTO 2015, Feb 2015, San Francisco, United States
Communication dans un congrès
hal-01497194v1
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Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layersCompound Semiconductor Week 2015 (CSW 2015), Jun 2015, Santa-Barbara, United States
Communication dans un congrès
hal-01147506v1
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Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy
Communication dans un congrès
hal-01147481v1
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Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumRayons X & Matière 2015, Dec 2015, Grenoble, France
Communication dans un congrès
hal-01497228v1
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Low cristalline defect density in GaP/Si nanolayersEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès
hal-01115024v1
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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France
Communication dans un congrès
hal-01115004v1
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Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
Communication dans un congrès
hal-01114912v1
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Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/SiMatériaux 2014, Nov 2014, Montpellier, France
Communication dans un congrès
hal-01115312v1
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Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots16th High Pressure in Semiconductor Physics conference (HPSP-16), Aug 2014, Mexico, Mexico
Communication dans un congrès
hal-01114998v1
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Analyse quantitative par diffraction des rayons X des défauts plans dans GaP/SI pour la photonique sur SiRéunion plénière du GDR Pulse (PULSE 2014), Oct 2014, Toulouse, France
Communication dans un congrès
hal-01137337v1
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Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
Communication dans un congrès
hal-01114877v1
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Raccordements de bandes et profils de constantes diélectriques pour des hétérostructures 2D à semiconducteursGDR co-DFT, May 2013, guidel, France
Communication dans un congrès
hal-00827732v1
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Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiquesJournées Nanosciences et Nanotechnologies du Nord Ouest 2013 (J2NO 2013), Nov 2013, Rennes, France
Communication dans un congrès
hal-00918787v1
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Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applicationsEuropean Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918729v1
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Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates : toward the III-V/Si Concentrated PhotovoltaicsInternational Symposium on Inorganic and Environmental Materials, Oct 2013, Rennes, France
Communication dans un congrès
hal-00918754v1
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gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès
hal-00918730v1
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Intégration optique par croissance directe de nanostructures III-V sur silicium14èmes Journées Nano, Micro et Optoélectronique (JNMO), May 2013, Evian, France
Communication dans un congrès
hal-00918745v1
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GaAsPN compounds for Si photonicsInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Communication dans un congrès
hal-00918743v1
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Carrier lifetime and relaxation dynamics in (In)GaAs/GaP quantum dotsInternational Symposium on Physics and Applications of Laser Dynamics IS-PALD, Oct 2013, Paris, France
Communication dans un congrès
hal-00918752v1
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Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/SiXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918790v1
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Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium compositioneuro-MBE conference, Mar 2013, Levi, Finland
Communication dans un congrès
hal-00918669v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporationCompound semiconductors week, IPRM, 2013, May 2013, Kobe, Japan
Communication dans un congrès
hal-00918734v1
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Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur siliciumXème colloque rayons X et matière, Nov 2013, Nantes, France
Communication dans un congrès
hal-00918791v1
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Optical, microstructural, vibrational and theoretical studies of p-type SrCu2O2 and BaCu2O2 Transparent Conductive OxidesSPIE Photonics West - OPTO 2013, Feb 2013, San Francisco, United States. pp.86261Y, ⟨10.1117/12.2014328⟩
Communication dans un congrès
hal-01162131v1
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Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2013), Aug 2013, Vancouver, Canada. pp.1397-1403, ⟨10.1007/s11082-014-9909-z⟩
Communication dans un congrès
hal-00951949v1
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Tight binding simulations in III-V structures on SiInternational Workshop "Silicon & Photonics", Jun 2013, Rennes, France
Communication dans un congrès
hal-00918742v1
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atomistic modelling of GaNAsP/GaPN type I quantum well heterostructures31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland
Communication dans un congrès
hal-00726874v1
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tight-binding calculations of Ga(NAsP)/GaP(N) quantum wells for photonic integration on siliconinternational conference on superlattice, nanostructures and nanodevices, 2012, Dresden, Germany
Communication dans un congrès
hal-00726868v1
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Contribution of DFT code to photovoltaic applicationsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788493v1
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InGaPN and GaAsPN layers for tandem solar cells on siliconEuropean materials research society international conference (EMRS), 2012, Strasbourg, France
Communication dans un congrès
hal-00726850v1
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Raman investigation of GaP-Si interfaces grown by molecular beam epitaxyEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
Communication dans un congrès
hal-00788308v1
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(In,Ga)As/GaP quantum dots for monolithic integration on silicon31st International Conference on the Physics of Semiconductors (ICPS 2012), Jul 2012, Zurich, Switzerland
Communication dans un congrès
hal-00726878v1
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Potentiality of GaAsPN and InGaPN for photovoltaic applications3rd PhotoVoltaic Technical Conference (PVTC 2012), Jun 2012, Aix-en-Provence, France
Communication dans un congrès
hal-00726855v1
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Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening processinternational conference on MBE, 2012, Nara, Japan
Communication dans un congrès
hal-00726776v1
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Toward a III-V/Si tandem solar cell: characterization and modelingJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788485v1
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Theoretical and experimental study of (In,Ga)As/GaP quantum dotsInternational Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Jul 2012, Dresden, Germany. pp.643, ⟨10.1186/1556-276X-7-643⟩
Communication dans un congrès
hal-00726861v1
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Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cellsJournées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
Communication dans un congrès
hal-00788544v1
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Evaluation of InGaP(N) and GaAsP(N) materials lattice-matched to Si for multi-junction solar cellsinternational conference on MBE, 2012, Japan
Communication dans un congrès
hal-00726772v1
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337v1
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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cellsJournées nationales du photovoltaïque (JNPV 2012), 2012, Chantilly, France
Communication dans un congrès
hal-00788478v1
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Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
Communication dans un congrès
hal-00788434v1
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Vibrational properties of SrCu2O2 studied via Density Functional Theory calculations and compared to Raman and infrared spectroscopy measurementsEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.113-116, ⟨10.1016/j.tsf.2012.10.130⟩
Communication dans un congrès
hal-00805323v1
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Dilute nitride GaNAsP for photonic applications on siliconInternational Symposium on nitrides (ISNT), 2012, saint-Malo, France
Communication dans un congrès
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Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationEuropean Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.87-91, ⟨10.1016/j.tsf.2012.10.134⟩
Communication dans un congrès
hal-00918657v1
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
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Structural characterisation of GaP/Si nanolayersEuropean Materials Research Society 2011, May 2011, Strasbourg, France
Communication dans un congrès
hal-00654330v1
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MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diodeeuro-MBE 2011, Mar 2011, Alpe d'Huez, France
Communication dans un congrès
hal-00654313v1
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Room temperature photoluminescence if InxGa1-xAs quantum dots on GaP substrateJournées Boîtes Quantiques 2011 (JBQ 2011), Jun 2011, Toulouse, France
Communication dans un congrès
hal-00654317v1
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
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Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on SiliconEMRS, Jun 2009, Strasbourg, France. pp.1
Communication dans un congrès
hal-00491771v1
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Growth and characterization of single phase GaP on Si(001)Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo
Communication dans un congrès
hal-00486678v1
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Croissance par MBE de Boites quantiques InP sur GaP/Sijournées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1
Communication dans un congrès
hal-00491778v1
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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès
hal-00491426v1
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Computational design of high performance hybrid perovskite on silicon tandem solar cells2016
Pré-publication, Document de travail
hal-01275497v1
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Computational design of high performance hybrid perovskite on silicon 2-T tandem solar cells based on a tunnel junctionInternational Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics 2018 (ABXPV&PEROPTO 18), Feb 2018, Rennes, France. 2018
Poster de conférence
hal-01722973v1
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Numerical investigation of the effect of interface conditions in HTM-free, printable WOx based and inverted perovskite solar cellsPoster de conférence hal-01812584v1 |
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Numerical investigation of the effect of interface conditions in HTM-free, printable WOx based and inverted perovskite solar cellsInternational Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics 2018 (ABXPV&PEROPTO 18), Feb 2018, Rennes, France. 2018
Poster de conférence
hal-01721648v1
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Computational design of high performance hybrid perovskite on silicon 2-T tandem solar cells based on a tunnel junction17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark
Poster de conférence
hal-01574956v1
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Poster de conférence
hal-01660154v1
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Numerical investigation of the effect of interface conditions in HTM-free and printable WOx based perovskite solar cellsPoster de conférence hal-01660167v1 |
Influence of Schottky contact on the HTM-free perovskite solar cells3è Journées Pérovskites Hybrides (JPH 2017), May 2017, Angers, France
Poster de conférence
hal-01523633v1
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Numerical simulation of C-V and I-V characteristics of perovskite based solar cells2nd International Conference on Perovskite Solar Cells and Optoelectronics (PSCO-2016), Sep 2016, Genova, Italy
Poster de conférence
hal-01524289v1
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GaAsPN Single and Tandem Solar Cells on Silicon19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Poster de conférence
hal-01496922v1
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Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium18th European Molecular Beam Epitaxy Workshop (Euro-MBE 2015), Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147468v1
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Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de siliciumOptique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France
Poster de conférence
hal-01497238v1
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Electroluminescence de boites quantiques InGaAs/GaP et ingénérie de bande des couches d’injection laser AlGaP/GaPOptique Bretagne 2015 - 35ème Journées Nationales d'Optique Guidée (JNOG'35), Jul 2015, Rennes, France
Poster de conférence
hal-01497243v1
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Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on siliconEuro-MBE 2015, Mar 2015, Canazei, Italy. 2015
Poster de conférence
hal-01147439v1
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Carrier capture and relaxation in GaAsPN/GaP quantum wells32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
hal-01115282v1
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GaAsPN alloys for optoelectronics on SiliconCompound Semiconductor Week 2014, May 2014, Montpellier, France. 2014
Poster de conférence
hal-01115268v1
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Electrical injection in GaP-based laser waveguides and active areas26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), pp.P23, 2014, ⟨10.1109/ICIPRM.2014.6880545⟩
Poster de conférence
hal-01114889v1
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Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots32nd International Conference on the Physics of Semiconductors (ICPS 2014), Aug 2014, Austin, United States. 2014
Poster de conférence
hal-01115307v1
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Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation25th International Conference on Indium Phosphide and Related Materials (IPRM2013), May 2013, Kobe, Japan. IEEE (ISSN: 1092-8669 ; e-ISBN: 978-1-4673-6131-6 ; Print ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562587⟩
Poster de conférence
hal-00918662v1
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