Jacques Peretti

Publications

Article dans une revue (21)

Role of the Junction Voltage on the Overflow Current in Light-Emitting Diodes Tanay Tak,Tsung-Yin Tsai,Wan Ying Ho,Yi Chao Chow,Jacques Perettiet al. Physical Review Applied, 2025, 24 (6), pp.064025. ⟨10.1103/jxct-dbjj⟩ Article dans une revue hal-05400919v1
Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes Tanay Tak,Wan Ying Ho,Iris Celupica-Liu,Yi Chao Chow,Jacques Perettiet al. Physical Review B, 2025, 111 (15), pp.155308. ⟨10.1103/PhysRevB.111.155308⟩ Article dans une revue hal-05400829v1
Investigation of the cesium activation of GaN photocathodes by low-energy electron microscopy Mylène Sauty,Cameron Johnson,Tanay Tak,Wan Ying Ho,Yi Chao Chowet al. Physical Review Applied, 2024, 22 (3), pp.034005. ⟨10.1103/PhysRevApplied.22.034005⟩ Article dans une revue hal-05400803v1
Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy Tanay Tak,Cameron Johnson,Wan Ying Ho,Feng Wu,Mylène Sautyet al. Physical Review Applied, 2023, 20 (6), pp.064045. ⟨10.1103/PhysRevApplied.20.064045⟩ Article dans une revue hal-04365353v1
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces Natalia Alyabyeva,Jacques Ding,Mylène Sauty,Judith Woerle,Yann Jousseaumeet al. physica status solidi (b), 2023, 260 (5), ⟨10.1002/pssb.202370013⟩ Article dans une revue hal-03808324v1
Measurement of minority carrier diffusion length in p -GaN using electron emission spectroscopy (EES) Wan Ying Ho,Yi Chao Chow,Shuji Nakamura,Jacques Peretti,Claude Weisbuchet al. Applied Physics Letters, 2023, 122 (21), ⟨10.1063/5.0150029⟩ Article dans une revue hal-04306950v1
Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds Mylène Sauty,Nicolas M. S. Lopes,Jean-Philippe Banon,Yves Lassailly,Lucio Martinelliet al. Physical Review Letters, 2022, 129 (21), pp.216602. ⟨10.1103/PhysRevLett.129.216602⟩ Article dans une revue hal-03872717v1
Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe Zhesheng Chen,Jelena Sjakste,Jingwei Dong,Amina Taleb-Ibrahimi,Jean-Pascal Rueffet al. Proceedings of the National Academy of Sciences of the United States of America, 2020, 117 (36), pp.21962-21967. ⟨10.1073/pnas.2008282117⟩ Article dans une revue hal-03049219v1
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy Daniel J Myers,Andrew C Espenlaub,Kristina Gelzinyte,Erin C Young,Lucio Martinelliet al. Applied Physics Letters, 2020, 116 (9), pp.091102. ⟨10.1063/1.5125605⟩ Article dans une revue hal-03051860v1
Transmission of high-energy electrons through metal-semiconductor Schottky junctions Elmer Monteblanco,Fabrice Donatini,Michel Hehn,Daniel Lacour,Y. Lassaillyet al. Physical Review B, 2019, 100 (20), pp.205301. ⟨10.1103/PhysRevB.100.205301⟩ Article dans une revue hal-02358162v1
Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop Daniel Myers,Kristina Gelžinytė,Abdullah Alhassan,Lucio Martinelli,Jacques Perettiet al. Physical Review B, 2019, 100 (12), pp.125303. ⟨10.1103/PhysRevB.100.125303⟩ Article dans une revue hal-02360524v1
Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes Daniel Myers,Kristina Gelžinytė,Wan Ying Ho,Justin Iveland,Lucio Martinelliet al. Journal of Applied Physics, 2018, 124 (5), pp.055703. ⟨10.1063/1.5030208⟩ Article dans une revue hal-02360526v1
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy W. Hahn,J.-M. Lentali,P. Polovodov,N. Young,S. Nakamuraet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (4), ⟨10.1103/PhysRevB.98.045305⟩ Article dans une revue hal-02324900v1
Polarized Luminescence of Anisotropic LaPO 4 :Eu Nanocrystal Polymorphs Élodie Chaudan,Jongwook Kim,Sandrine Tusseau-Nenez,Philippe Goldner,Oscar Maltaet al. Journal of the American Chemical Society, 2018, 140 (30), pp.9512-9517. ⟨10.1021/jacs.8b03983⟩ Article dans une revue hal-02360528v1
Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics Zhesheng Chen,Christine Giorgetti,Jelena Sjakste,Raphael Cabouat,Valérie Véniardet al. Physical Review B, 2018, 97 (24), ⟨10.1103/PhysRevB.97.241201⟩ Article dans une revue hal-02264122v1
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Chi-Kang Li,Marco Piccardo,Li-Shuo Lu,Svitlana Mayboroda,Lucio Martinelliet al. Physical Review B, 2017, 95 (14), pp.144206. ⟨10.1103/PhysRevB.95.144206⟩ Article dans une revue hal-02360581v1
Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography Jongwook Kim,Sébastien Michelin,Michiel Hilbers,Lucio Martinelli,Elodie Chaudanet al. Nature Nanotechnology, 2017, 12 (9), pp.914-919. ⟨10.1038/nnano.2017.111⟩ Article dans une revue hal-02104842v1
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers Marco Piccardo,Chi-Kang Li,Yuh-Renn Wu,James Speck,Bastien Bonefet al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95 (14), ⟨10.1103/PhysRevB.95.144205⟩ Article dans une revue hal-02360584v1
Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal / oxide / semiconductor junction Nicolas Rougemaille,Driss Lamine,G. Lampel,Y. Lassailly,J. Peretti Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.094409 Article dans une revue hal-00971594v1
Apertureless near-field optical microscopy: A study of the local tip field enhancement using photosensitive azobenzene-containing films Renaud Bachelot,Fekhra H’dhili,Dominique Barchiesi,Gilles Lerondel,Radouane Fikriet al. Journal of Applied Physics, 2003, 94 (3), pp.2060-2072. ⟨10.1063/1.1585117⟩ Article dans une revue hal-02292883v1
The formation of the Pb/Si(111) interface studied by in situ ellipsometry and surface spectroscopy G Quentel,G Gauch,Alain Jean Degiovanni,W Yang,J. Perettiet al. Physica Scripta, 1988, 38 (2), pp.169-171 Article dans une revue hal-01963922v1

Pré-publication, Document de travail (1)

Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs C Fornos,N Alyabyeva,W.Y. Zhou,C Roubert,T. Taket al. 2025 Pré-publication, Document de travail hal-05390423v1