Jean-François Michaud

Identifiants chercheurs

IdHAL :

jean-francois-michaud

ORCID :

0000-0002-7441-8982

IdRef :

084441380

Publications

Article dans une revue (25)

Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing Clément Berger,Daniel Alquier,Jean François Michaud Materials Science Forum, 2025, 1159, pp.31-36. ⟨10.4028/p-NWvo3B⟩ Article dans une revue hal-05247910v1
How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC Clément Berger,Daniel Alquier,Jean-François Michaud Electronics, 2024, 13 (1), pp.217. ⟨10.3390/electronics13010217⟩ Article dans une revue hal-04378904v1
Silicon-carbide-based MEMS for gas detection applications Jean-François Michaud,Marc Portail,Daniel Alquier,Dominique Certon,Isabelle Dufour Materials Science in Semiconductor Processing, 2023, 171, pp.107986. ⟨10.1016/j.mssp.2023.107986⟩ Article dans une revue hal-04301385v1
Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing Clément Berger,Daniel Alquier,Micka Bah,Jean-François Michaud Materials Science in Semiconductor Processing, 2022, 151, pp.106983. ⟨10.1016/j.mssp.2022.106983⟩ Article dans une revue hal-03755512v1
Gas discrimination by simultaneous sound velocity and attenuation measurements using uncoated capacitive micromachined ultrasonic transducers Luis Iglesias Hernandez,Priyadarshini Shanmugam,Jean-François Michaud,Daniel Alquier,Dominique Certonet al. Scientific Reports, 2022, 12 (1), pp.744. ⟨10.1038/s41598-021-04689-4⟩ Article dans une revue hal-03528025v1
Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing Priyadarshini Shanmugam,L. Iglesias,J.F. Michaud,Daniel Alquier,L. Colinet al. Ultrasonics, 2021, 114, pp.106410. ⟨10.1016/j.ultras.2021.106410⟩ Article dans une revue hal-03205726v1
Proof of concept and preliminary results of gas detection by measuring the admittance at the resonance and anti-resonance of an uncoated CMUT Luis Iglesias,Priyadarshini Shanmugam,Jean-François Michaud,Daniel Alquier,Dominique Certonet al. Frontiers of Mechanical Engineering, 2020, 6, pp.14. ⟨10.3389/fmech.2020.00014⟩ Article dans une revue hal-02505916v1
Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates Jaweb Ben Messaoud,Jean-François Michaud,Dominique Certon,Massimo Camarda,Nicolò Pilusoet al. Micromachines, 2019, 10, ⟨10.3390/mi10120801⟩ Article dans une revue hal-02374829v1
Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes Rami Khazaka,Jean-François Michaud,Philippe Vennegues,Daniel Alquier,Marc Portail Applied Physics Letters, 2017, 110 (8), ⟨10.1063/1.4977033⟩ Article dans une revue hal-01741061v1
Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate Emilie Bahette,Jean-François Michaud,Dominique Certon,Dominique Gross,Marie Perroteauet al. Journal of Micromechanics and Microengineering, 2016, 26 (11), ⟨10.1088/0960-1317/26/11/115023⟩ Article dans une revue hal-01741067v1
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) Rami Khazaka,Marius Grundmann,Marc Portail,Philippe Vennegues,Marcin Zielinskiet al. Applied Physics Letters, 2016, 108 (1), ⟨10.1063/1.4939692⟩ Article dans une revue hal-01741073v1
On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction Rami Khazaka,Jean-François Michaud,Philippe Vennegues,Luan Nguyen,Daniel Alquieret al. Journal of Applied Physics, 2016, 120, pp.185306 - 141907. ⟨10.1063/1.4967741⟩ Article dans une revue hal-01740987v1
Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate Rami Khazaka,Emilie Bahette,Marc Portail,Daniel Alquier,Jean-François Michaud Materials Letters, 2015, 160, pp.28-30. ⟨10.1016/j.matlet.2015.07.071⟩ Article dans une revue istex hal-01784769v1
Direct Insight into Grains Formation in Si Layers Grown on 3C-SiC by Chemical Vapor Deposition Rami Khazaka,Marc Portail,Philippe Vennéguès,Daniel Alquier,Jean-François Michaud Acta Materialia, 2015, 98, pp.336-342. ⟨10.1016/j.actamat.2015.07.052⟩ Article dans une revue istex hal-01784770v1
Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy R. Boubekri,E. Cambril,L. Couraud,L. Bernardi,A. Madouriet al. Journal of Applied Physics, 2014, 116, pp.054304. ⟨10.1063/1.4891833⟩ Article dans une revue hal-01715334v1
Progresses in cMUT Device Fabrication Using Low Temperature Processes Emilie Bahette,Jean-François Michaud,Dominique Certon,Dominique Gross,Daniel Alquier Journal of Micromechanics and Microengineering, 2014, 24 (4), pp.045020. ⟨10.1088/0960-1317/24/4/045020⟩ Article dans une revue hal-01831020v1
Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate Jean-François Michaud,Marc Portail,Thierry Chassagne,Marcin Zielinski,Daniel Alquier Microelectronic Engineering, 2013, 105, pp.65-67. ⟨10.1016/j.mee.2013.01.010⟩ Article dans une revue istex hal-01810899v1
Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces Gaël Gautier,Frédéric Cayrel,Marie Capelle,Jérôme Billoue,Xi Songet al. Nanoscale Research Letters, 2012, 7 (1), pp.367-373. ⟨10.1186/1556-276X-7-367⟩ Article dans une revue hal-01810904v1
A New Approach for AFM Cantilever Elaboration with 3C-SiC Sai Jiao,Jean-François Michaud,Marc Portail,A. Madouri,Thierry Chassagneet al. Materials Letters, 2012, 77, pp.54-56. ⟨10.1016/j.matlet.2012.02.128⟩ Article dans une revue istex hal-01810915v1
Experimental Observation and Analytical Model of the Stress Gradient Inversion in 3C-SiC Layers on Silicon M. Zielinski,Jean-François Michaud,Sai Jiao,Thierry Chassagne,Anne-Elisabeth Bazinet al. Journal of Applied Physics, 2012, 111 (5), pp.053507. ⟨10.1063/1.3687370⟩ Article dans une revue hal-01810913v1
CW argon laser crystallization of silicon films: structural properties J.F. Michaud,Régis Rogel,Tayeb Mohammed-Brahim,Michel Sarret Journal of Non-Crystalline Solids, 2006, 352 (9-20), pp.998-1002 Article dans une revue hal-00437319v1
Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions J.F. Michaud,Christophe Cordier,Abdelmalek Boukhenoufa,Laurent Pichon Solid-State Electronics, 2005, 49, issue 8, pp 1376-1380 Article dans une revue hal-00013581v1
Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions Christophe Cordier,Abdelmalek Boukhenoufa,Laurent Pichon,Jean-François Michaud Solid-State Electronics, 2005, 49 (8), pp.1376-1380 Article dans une revue hal-00772760v1
Solid phase post-treatment of polysilicon films by a continuous argon laser J.F. Michaud,Régis Rogel,Tayeb Mohammed-Brahim,Michel Sarret,Olivier Bonnaud Thin Solid Films, 2005, 487, pp.81-84 Article dans une revue hal-00772824v1
Polysilicon thin-film transistors based on frequency doubled cw-Nd:YVO4 laser crystallized silicon Amar Saboundji,Jean-François Michaud,Tayeb Mohammed-Brahim,France Le Bihan,G. Andräet al. Solid State Phenomena, 2003, 93, pp.55-60 Article dans une revue hal-00085671v1

Communication dans un congrès (28)

Development of SiC-Based CMUTs for Harsh Environments: A Material Challenge Quentin David,Khaoula Azaiez,Jean-François Michaud,Flavien Barcella,Sébastien Chenotet al. EMRS Fall Meeting, 2025, Varsovie, Poland Communication dans un congrès hal-05363490v1
Epitaxial growth and process developments for SiC-based CMUTs in harsh environments Khaoula Azaiez,Quentin David,Jean-François Michaud,Flavien Barcella,Sébastien Chenotet al. GDR MATEPI, 2025, Lille, France Communication dans un congrès hal-05363506v1
Laser Annealing: A New Strategy For SiC Power Device Contacts Daniel Alquier,Clément Berger,Jean-François Michaud NanoInnovation 2024, Airi - Associazione Italiana per la Ricerca Industriale, Sep 2024, ROME, Sapienza Univesità di Roma, Italy Communication dans un congrès hal-04709991v1
Interest of cMUT technologies : from materials and processes to applications D Alquier,J.-F. Michaud,F Barcella,L Colin,Etienne Lemaireet al. IEEE International Conference on Microelectronic Test Structures ICMTS 2024, IEEE, Apr 2024, Edimbourg (Ecosse), United Kingdom Communication dans un congrès hal-04518488v1
Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing Jean-François Michaud,Clément Berger,Daniel Alquier ICSCRM 2023, Sep 2023, Sorrento, Italy. pp.91, ⟨10.4028/p-xqh9xB⟩ Communication dans un congrès hal-04675210v1
Contact Strategies for SiC Power Devices Daniel Alquier,Clément Berger,Jean-François Michaud Materials for Advanced Metallization conference (MAM), Mar 2024, Milan (Italie), France Communication dans un congrès hal-04515260v1
Cubic silicon carbide (3C-SiC) MEMS for gas detection Jean-François Michaud,Marc Portail,Daniel Alquier,Dominique Certon,Isabelle Dufour WOCSDICE - EXMATEC, May 2023, Palerme (Italie), France Communication dans un congrès hal-04515241v1
H2MEMS Project: Resonant MEMS for detection of hydrogen release in radioactive waste disposal facility Isabelle Dufour,Luis Iglesias Hernandez,Priyadarshini Shanmugam,Jean-François Michaud,Laurent Colinet al. Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF / IFCS 2022), Apr 2022, Paris, France Communication dans un congrès hal-03778623v1
A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers Priyadarshini Shanmugam,Luis Iglesias,Marc Portail,Isabelle Dufour,Dominique Certonet al. 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021) 2021-10-24, May 2022, Tours, France. pp.593-597, ⟨10.4028/p-m048qs⟩ Communication dans un congrès hal-03708472v1
Hydrogen Selective Gas Sensor Based on Attenuation Measurement of Acoustic Wave Using Uncoated CMUT Luis Iglesias Hernandez,Priyadarshini Shanmugam,Jean-François Michaud,Daniel Alquier,Dominique Certonet al. 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), Jan 2021, Gainesville, United States. pp.398-401, ⟨10.1109/MEMS51782.2021.9375432⟩ Communication dans un congrès hal-03205733v1
Discrimination of Binary Gas Mixture Using CMUT Based Sound Attenuation Spectrum Gas Sensor Luis Iglesias Hernandez,Priyadarshini Shanmugam,Jean-François Michaud,Daniel Alquier,Dominique Certonet al. 18th International Meeting on Chemical Sensors IMCS 2021, May 2021, Chicago, United States. pp.1592-1592, ⟨10.1149/MA2021-01591592mtgabs⟩ Communication dans un congrès hal-03528047v1
Cmut Time of Flight Gas Sensor By Phase Shift Measurement Luis Iglesias,Priyadarshini Shanmugam,Jean-François Michaud,Daniel Alquier,Dominique Certonet al. 18th International Meeting on Chemical Sensors IMCS 2020, 2020, Montreal, France. ⟨10.1149/MA2020-01312323mtgabs⟩ Communication dans un congrès hal-02476748v1
Resonant MEMS for Gas Detection Based on the Measurements of Physical Properties of Gas Mixtures Isabelle Dufour,Luis Iglesias Hernandez,Priyadarshini Shanmugam,Jean-François Michaud,Daniel Alquieret al. 2020 Joint Conference of the IEEE International Frequency Control Symposium and the IEEE International Symposium on Applications of Ferroelectrics, Jul 2020, Keystone (virtual conference), United States. pp.1-3, ⟨10.1109/IFCS-ISAF41089.2020.9234908⟩ Communication dans un congrès hal-02481928v1
High Frequency Gas Detection With an Uncoated CMUT Array by Impedance Resonant Frequency Measurement Luis Iglesias Hernandez,Isabelle Dufour,Priyadarshini Shanmugam,Jean-François Michaud,Daniel Alquieret al. IEEE SENSORS (2019), Oct 2019, Montréal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956767⟩ Communication dans un congrès hal-02476746v1
Gas detection in binary mixture by time of flight measurement made by the use of CMUTs Luis Iglesias,Priyadarshini Shanmugam,Steven Pena,J.-F. Michaud,Daniel Alquieret al. Workshop MUT 2019, 2019, Grenoble, France Communication dans un congrès hal-02191737v1
CMUT enabled binary mixture gas sensing through time of flight measurement Luis Iglesias,Priyadarshini Shanmugam,Steven Pena,Jean-François Michaud,Daniel Alquieret al. The 16th International Workshop on Nanomechanical Sensors, 2019, Lausanne, Switzerland Communication dans un congrès hal-02191746v1
Time of flight gas sensing with capacitive micro-machined ultrasonic transducers (CMUT’s) Luis Iglesias,Priyadarshini Shanmugam,Steven Pena,Jean-François Michaud,Daniel Alquieret al. Journées de l’école doctorale SPI Université de Bordeaux, Mar 2019, Bordeaux, France Communication dans un congrès hal-02090954v1
CMUT Based Air Coupled Transducers for Gas-Mixture Analysis Priyadarshini Shanmugam,Luis Iglesias,Jean-François Michaud,Isabelle Dufour,Daniel Alquieret al. 2018 IEEE International Ultrasonics Symposium (IUS), Oct 2018, Kobe, Japan. pp.1-4, ⟨10.1109/ULTSYM.2018.8579789⟩ Communication dans un congrès hal-02013282v1
Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers Jean-François Michaud,Marcin Zielinski,Jaweb Ben Messaoud,Thierry Chassagne,Marc Portailet al. International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington, United States. pp.318-321, ⟨10.4028/www.scientific.net/MSF.924.318⟩ Communication dans un congrès hal-02017420v1
Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration Jean-François Michaud,Rami Khazaka,M. Portail,G. Andrä,J. Bergmannet al. Conférence MRS Spring Meeting, Apr 2016, Phoenix, United States. pp.3649 - 3654, ⟨10.1557/adv.2016.327⟩ Communication dans un congrès hal-01741555v1
Cw Argon Laser Crystallization of Silicon Films : Structural properties J.F. Michaud,Regis Rogel,Tayeb Mohammed-Brahim,Michel Sarret Int. Conf. Amorphous and Nanocrystalline Semiconductors (ICANS'21), Sep 2005, Lisbonne, Portugal Communication dans un congrès hal-00776201v1
Apparent noise parameter behavior in n-MOS transistors operating from subthreshold to above-threshold regions Abdelmalek Boukhenoufa,Laurent Pichon,Christophe Cordier,Bogdan Cretu,Lehui Dinget al. Proceedings of the 18th International Conference on noise in Physical Systems and 1/f Fluctuation ; ICNF 2005 ; CP780 Noise and Fluctuations, Sep 2005, Salamanca, Spain. pp.319-322 Communication dans un congrès hal-00773430v1
Continuous Argon Laser Crystallization of Patterned Silicon Jean-François Michaud,Amar Saboundji,Regis Rogel,Tayeb Mohammed-Brahim,Michel Sarretet al. The 11th International Displays Workshops IDW'04, Dec 2004, Niigata, Japan Communication dans un congrès hal-00870482v1
Solid phase post-treatment of polysilicon films by a continuous argon laser Jean-François Michaud,Regis Rogel,Tayeb Mohammed-Brahim,Michel Sarret,Olivier Bonnaud POLYSE 2004, Sep 2004, Potdam, Germany Communication dans un congrès hal-00870429v1
Modeling to the heating of a silicon thin film on a glass substrate during a cw argon laser crystallization process G. Le Meur,B. Bourouga,J.F. Michaud,Tayeb Mohammed-Brahim 6th International Symposium on Heat Transfer, Jun 2004, pekin, China. pp.137-142 Communication dans un congrès hal-00848465v1
Impact of the use of the second harmonic CW Nd:YVO4 laser to crystallize amorphous silicon films on the TFT performance Amar Saboundji,Jean-François Michaud,Tayeb Mohammed-Brahim,Olivier Bonnaud,G. Andräet al. Proceedings of International Conference on AM-LCD 2004, Aug 2004, Tokyo, Japan Communication dans un congrès hal-00870772v1
Cristallisation par laser argon continu de silicium amorphe déposé sur substrat de verre Jean-François Michaud JNRDM, May 2004, Marseille, France. pp.135-137 Communication dans un congrès hal-00906104v1
Cristallisation par laser continu de silicium amorphe déposé sur substrat de verre LPCVD Jean-François Michaud JNRDM, May 2003, Toulouse, France. Proceedings p 299 Communication dans un congrès hal-00921466v1

Poster de conférence (1)

SiC for Sensing in Harsh Environment Marc Portail,Sylvain Kern,Clément Berger,Cécile Ghouila-Houri,Vincent Guigozet al. International Conference on Silicon Carbide and Related Materials, Sep 2024, Rayleigh, North Carolina, United States Poster de conférence hal-04922976v1

Chapitre d'ouvrage (1)

3C-SiC — From Electronic to MEMS Devices Jean-François Michaud,Marc Portail,Daniel Alquier Advanced Silicon Carbide Devices and Processing, InTech, 2015 Chapitre d'ouvrage hal-02132700v1

Brevet (2)

Dispositif et procédé d’identification d’une contamination gazeuse Luis Iglesias Hernandez,Dominique Certon,Jean-François Michaud,Priyadarshini Shanmugam,Laurent Colinet al. France, N° de brevet: FR2009223. 2020 Brevet hal-02978837v1
Dispositif et procédé de détection d’hydrogène Luis Iglesias Hernandez,Dominique Certon,Jean-François Michaud,Priyadarshini Shanmugam,Laurent Colinet al. France, N° de brevet: FR2009222. 2020 Brevet hal-02978825v1

HDR (1)

Carbure de silicium pour des applications en électronique de puissance et pour les MEMS Jean-François Michaud Sciences de l'ingénieur [physics]. Université de tours, 2023 HDR tel-04549212v1