Jean-Louis LAZZARI

Publications

Article dans une revue (93)

Enhanced CuO Thin Film Growth via an Optimized Aerosol Droplet Method: Thermal Effects and Structural Evaluation Fathi Omri,Wafa Selmi,Mohamed Saidani,H. Elhosiny Ali,Jean‐louis Lazzariet al. Advanced Optical Materials, 2025, ⟨10.1002/adom.202500980⟩ Article dans une revue hal-05160056v1
Investigation of a sensitive, selective and cost-effective electrochemical meso-porous silicon based gas sensor for NO&lt;sub&gt;2&lt;/sub&gt; detection at room temperature Khaoula Azaiez,Hela Mhamdi,Rabia Benabderrahmane Zaghouani,Tomas Fiorido,Jean-Louis Lazzariet al. European Physical Journal: Applied Physics, 2024, 99, pp.19. ⟨10.1051/epjap/2024240081⟩ Article dans une revue hal-04701319v1
Growth and characterization of Cu2ZnxFe1-xSnS4 thin films deposited on n-type silicon substrates M. Sebai,I. Trabelsi,G. Bousselmi,J.-L. Lazzari,M. Kanzari Physica B: Condensed Matter, 2023, 653, pp.414670. ⟨10.1016/j.physb.2023.414670⟩ Article dans une revue hal-04311451v1
Preparation and characterization of Cu2ZnxFe1−xSnS4 thin ‎films deposited on intrinsic silicon substrates Marwa Sebai,Ghada Bousselmi,Jean-Louis Lazzari,Mounir Kanzari Materials Today Communications, 2023, 35, pp.105558. ⟨10.1016/j.mtcomm.2023.105558⟩ Article dans une revue hal-04311472v1
Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector N Sfina,I Ammar,J.-L. Lazzari,M Said Physica Scripta, 2020, 96 (3), pp.035802. ⟨10.1088/1402-4896/abd49a⟩ Article dans une revue hal-03144158v1
Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction H. Saïdi,C. Ben Alaya,M. F. Boujmil,Bernard Durand,J.-L. Lazzariet al. Current Applied Physics, 2020, 20 (1), pp.29 - 36. ⟨10.1016/j.cap.2019.09.015⟩ Article dans une revue hal-03141578v1
Study of n-WO3/p-porous silicon structures for gas-sensing applications H. Mhamdi,R. Benabderrahmane Zaghouani,T. Fiorido,J.-L. Lazzari,Marc Bendahanet al. Journal of Materials Science: Materials in Electronics, 2020, 31 (10), pp.7862-7870. ⟨10.1007/s10854-020-03324-8⟩ Article dans une revue hal-02867069v1
Energy band gap tuning in Te-doped WS2/WSe2 heterostructures Anna Krivosheeva,Victor Shaposhnikov,Victor Borisenko,J.-L. Lazzari Journal of Materials Science, 2020, 55 (23), pp.9695-9702. ⟨10.1007/s10853-020-04485-x⟩ Article dans une revue hal-03156173v1
Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position A. Krivosheeva,V. Shaposhnikov,V. e. Borisenko,Jean-Louis Lazzari International Journal of Nanoscience, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩ Article dans une revue hal-02414584v1
Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure N Sfina,A. Jbeli,Jean-Louis Lazzari,M. Saïd Recent Advances in Photonics and Optics, 2019, ⟨10.36959/665/321⟩ Article dans une revue hal-02414543v1
Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position A. Krivosheeva,V. Shaposhnikov,V. e. Borisenko,J.-L. Lazzari International Journal of Nanoscience, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩ Article dans une revue hal-03144479v1
Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure N. Sfina,A. Jbeli,J.-L. Lazzari,M. Said Recent Advances in Photonics and Optics, 2019, 2 (1), pp.40-49. ⟨10.36959/665/321⟩ Article dans une revue hal-03141584v1
Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles M. Alaya,Rabia Benabderrahmane Zaghouani,S. Khamlich,J.-L. Lazzari,W. Dimassi Thin Solid Films, 2018, 645, pp.51-56. ⟨10.1016/j.tsf.2017.10.041⟩ Article dans une revue hal-03156158v1
Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application H Saïdi,M Boujmil,Bernard Durand,J.-L. Lazzari,M Bouaïcha Materials Research Express, 2018, 5 (1), pp.016414. ⟨10.1088/2053-1591/aaa604⟩ Article dans une revue hal-03144205v1
Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles M. Alaya,R. Benabderrahmane Zaghouani,S. Khamlich,J. -L. Lazzari,W. Dimassi Thin Solid Films, 2018, 645, pp.51-56. ⟨10.1016/j.tsf.2017.10.041⟩ Article dans une revue hal-01688043v1
Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation R. Benabderrahmane Zaghouani,M. Alaya,H. Nouri,J.-L. Lazzari,W. Dimassi Journal of Materials Science: Materials in Electronics, 2018, 29 (20), pp.17731-17736. ⟨10.1007/s10854-018-9879-1⟩ Article dans une revue hal-01958616v1
Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application H. Saidi,M Boujmil,B Durand,J-L Lazzari,M Bouaïcha Materials Research Express, 2018, 5 (1), ⟨10.1088/2053-1591/aaa604⟩ Article dans une revue hal-01720283v1
Multiscale in modelling and validation for solar photovoltaics Tareq Abu Hamed,Nadja Adamovic,Urs Aeberhard,Diego Alonso-Alvarez,Zoe Amin-Akhlaghiet al. EPJ Photovoltaics, 2018, 9, pp.10. ⟨10.1051/epjpv/2018008⟩ Article dans une revue hal-01908379v1
Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis Hela Boustanji,Sihem Jaziri,J.-L. Lazzari Solar Energy Materials and Solar Cells, 2017, 159, pp.633-639. ⟨10.1016/j.solmat.2016.03.038⟩ Article dans une revue hal-03144529v1
Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis Hela Boustanji,Sihem Jaziri,Jean-Louis Lazzari Solar Energy Materials and Solar Cells, 2017, 159, pp.633 - 639. ⟨10.1016/j.solmat.2016.03.038⟩ Article dans une revue hal-01720820v1
Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode A. Rached,A. Bhouri,S. Sakr,J. -L. Lazzari,H. Belmabrouk Superlattices and Microstructures, 2016, 91, pp.37-50. ⟨10.1016/j.spmi.2015.12.035⟩ Article dans une revue hal-01455019v1
Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons A. Kechiantz,A. Afanasev,J. -L. Lazzari Solar Energy Materials and Solar Cells, 2016, 144, pp.767-774. ⟨10.1016/j.solmat.2015.01.034⟩ Article dans une revue hal-01455013v1
Composition dependence of the band offsets in wurtzite nitride-based heterojunctions Amel Bhouri,Jean-Louis Lazzari Materials Science in Semiconductor Processing, 2016, 41, pp.121-131. ⟨10.1016/j.mssp.2015.08.011⟩ Article dans une revue hal-01455010v1
Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons A. Kechiantz,A. Afanasev,J.-L. Lazzari Solar Energy Materials and Solar Cells, 2016, 144, pp.767-774. ⟨10.1016/j.solmat.2015.01.034⟩ Article dans une revue hal-03144548v1
Composition dependence of the band offsets in wurtzite nitridebased heterojunctions Amel Bhouri,J.-L. Lazzari Materials Science in Semiconductor Processing, 2016, 41, pp.121-131. ⟨10.1016/j.mssp.2015.08.011⟩ Article dans une revue hal-03150428v1
Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode A. Rached,A. Bhouri,S. Sakr,J.-L. Lazzari,H. Belmabrouk Superlattices and Microstructures, 2016, 91, pp.37-50. ⟨10.1016/j.spmi.2015.12.035⟩ Article dans une revue hal-03150265v1
Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells Mahfoudh Raissi,Gabrielle Regula,Jean-Louis Lazzari Solar Energy Materials and Solar Cells, 2016, 144, pp.775-780. ⟨10.1016/j.solmat.2014.10.024⟩ Article dans une revue istex hal-01435212v1
Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures A Bhouri,A Rached,J.-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩ Article dans une revue hal-03150395v1
Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells A. Kechiantz,A. Afanas'Ev,J-L. Lazzari Progress in Photovoltaics, 2015, 23 (8), pp.1003-1016 Article dans une revue hal-01176908v1
Band gap modifications of two-dimensional defected MoS 2 A. V. Krivosheeva,V. L. Shaposhnikov,V. E. Borisenko,J.-L. Lazzari,N. V. Skorodumovaet al. International Journal of Nanotechnology, 2015, 12 (8-9), pp.654. ⟨10.1504/IJNT.2015.068886⟩ Article dans une revue hal-03144566v1
Direct band gap InxGa1-xAs/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector N. Harbi,N. Sfina,A. Jbeli,J-L. Lazzari,M. Said Optical Materials, 2015, 46, pp.472-480 Article dans une revue hal-01176915v1
Resonant tunneling transport in AlzGa1-zN/InxGa1-x/AlzGa1-zN/InyGa1-yN quantum structures A. Bhouri,A. Rached,J-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102 Article dans une revue hal-01214532v1
Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge&lt;sub&gt;0.964&lt;/sub&gt;Sn&lt;sub&gt;0.036&lt;/sub&gt;/Ge multiple quantum wells by quantum modelling N. Yahyaoui,N. Sfina,J. L. Lazzari,A. Bournel,M. Said Semiconductor Science and Technology, 2015, 30 (8), pp.085016. ⟨10.1088/0268-1242/30/8/085016⟩ Article dans une revue hal-01214522v1
Theoretical study of defect impact on two-dimensional MoS 2 Anna Krivosheeva,Victor Shaposhnikov,Victor Borisenko,Jean-Louis Lazzari,Chow Waileonget al. Chinese Journal of Semiconductors, 2015, 36 (12), ⟨10.1088/1674-4926/36/12/122002⟩ Article dans une revue hal-01721079v1
Impact of spatial separation of type-II GaSb quantum dots from the depletion region on the conversion efficiency limit of GaAs solar cells Ara Kechiantz,Andrei Afanasev,J.-L. Lazzari Progress in Photovoltaics: Research and Applications, 2015, 23 (8), pp.1003-1016. ⟨10.1002/pip.2521⟩ Article dans une revue hal-03151392v1
Direct band gap In x Ga 1Àx As/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector N. Harbi,N. Sfina,A. Jbeli,J.-L. Lazzari,M. Said Optical Materials, 2015, 46, pp.472-480. ⟨10.1016/j.optmat.2015.05.006⟩ Article dans une revue hal-03144491v1
Band gap modifications of two-dimensional defected MoS2 A.V. Krivosheeva,V.L. Shaposhnikov,V.E. Borisenko,Jean-Louis Lazzari,N.V. Skorodumovaet al. International Journal of Nanotechnology, 2015, 12 (8/9), pp.654 - 662. ⟨10.1504/IJNT.2015.068886⟩ Article dans une revue hal-01721341v1
Theoretical study of defect impact on two-dimensional MoS 2 Anna Krivosheeva,Victor Shaposhnikov,Victor Borisenko,J.-L. Lazzari,Chow Waileonget al. Journal of Semiconductors, 2015, 36 (12), pp.122002. ⟨10.1088/1674-4926/36/12/122002⟩ Article dans une revue hal-03151410v1
Stark shift of the absorption spectra in Ge/Ge1−xSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators N. Yahyaoui,N. Sfina,J.-L. Lazzari,A. Bournel,M. Said Superlattices and Microstructures, 2015, 85, pp.629-637. ⟨10.1016/j.spmi.2015.06.021⟩ Article dans une revue hal-03144282v1
Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures A Bhouri,A Rached,J.-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩ Article dans une revue hal-03151381v1
Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge 0.964 Sn 0.036 /Ge multiple quantum wells by quantum modelling N Yahyaoui,N Sfina,J.-L. Lazzari,A Bournel,M Said Semiconductor Science and Technology, 2015, 30 (8), pp.085016. ⟨10.1088/0268-1242/30/8/085016⟩ Article dans une revue hal-03151362v1
Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures A Bhouri,A Rached,J.-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩ Article dans une revue hal-03151396v1
Electron transport through cubic InGaN/AlGaN resonant tunneling diodes N. Yahyaoui,N. Sfina,S. Abdi-Ben Nasrallah,J-L. Lazzari,M. Said Computer Physics Communications, 2014, 185 (12), pp.3119-3126 Article dans une revue hal-01221448v1
Magnetic properties of A II -B IV -C 2 V chalcopyrite semiconductors doped with 3d-elements Anna Krivosheeva,Victor Shaposhnikov,Victor Borisenko,J.-L. Lazzari physica status solidi (b), 2014, 251 (5), pp.1007-1019. ⟨10.1002/pssb.201350305⟩ Article dans une revue istex hal-03151346v1
Magnetic properties of AII-BIV-CV2 chalcopyrite semiconductors doped with 3d-elements A.V. Krivosheeva,V.L. Shaposhnikov,V.E. Borisenko,J-L. Lazzari physica status solidi (b), 2014, 251 (5), pp.1007-1019 Article dans une revue hal-00992902v1
Modelling of the quantum transport in strained Si/SiGe/Si superlattices based p-i-n infrared photodetectors for 1.3-1.55 μm optical communication N. Sfina,N. Yahyaoui,M. Said,J.-L. Lazzari Modeling and Numerical Simulation of Material Science, 2014, 4, pp.37-52 Article dans une revue hal-00975045v1
Band engineering and absorption spectra in compressively strained Ge 0.92 Sn 0.08 /Ge (001) double quantum well for infrared photodetection N. Yahyaoui,N. Sfina,J.-L. Lazzari,A. Bournel,M. Said Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (11-12), pp.1561-1565. ⟨10.1002/pssc.201400054⟩ Article dans une revue istex hal-03144555v1
Wave-function engineering and absorption spectra in Si 0.16 Ge 0.84 /Ge 0.94 Sn 0.06 /Si 0.16 Ge 0.84 strained on relaxed Si 0.10 Ge 0.90 type I quantum well N. Yahyaoui,N. Sfina,J.-L. Lazzari,A. Bournel,M. Said Journal of Applied Physics, 2014, 115 (3), pp.033109. ⟨10.1063/1.4862226⟩ Article dans une revue hal-03144424v1
Electron transport through cubic InGaN/AlGaN resonant tunneling diodes S Abdi-Ben Nasrallah,N. Yahyaoui,N. Sfina,S. Abdi-Ben Nasrallah,J.-L. Lazzariet al. Computer Physics Communications, 2014, 185 (12), pp.3119-3126. ⟨10.1016/j.cpc.2014.08.006⟩ Article dans une revue hal-03144318v1
Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication Noureddine Sfina,Naima Yahyaoui,Moncef Said,J.-L. Lazzari Modeling and Numerical Simulation of Material Science, 2014, 4 (1), pp.37-52. ⟨10.4236/mnsms.2014.41007⟩ Article dans une revue hal-03144388v1
Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1-xGex/Ge/Si1-xGex type-I quantum wells N. Yahyaoui,N. Sfina,J.-L. Lazzari,A. Bournel,M. Said The European Physical Journal B: Condensed Matter and Complex Systems, 2013, 86 (2), pp.59 Article dans une revue hal-00843724v1
Intersubband transitions in quantum well mid-infrared photodetectors N. Zeiri,N. Sfina,S. Abdi-Ben Nasrallah,J.-L. Lazzari,M. Said Infrared Physics and Technology, 2013, 60, pp.137-144 Article dans une revue hal-00975049v1
Ab initio modeling of the structural, electronic and optical properties of AIIBIVCV2 semiconductors V.L. Shaposhnikov,A.V. Krivosheeva,V.E. Borisenko,J.L. Lazzari,F. Arnaud d'Avitaya Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85, pp.205201 Article dans une revue hal-00698898v1
Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode S. Mnasri,S. Abdi-Ben Nasrallah,N. Sfina,J.L. Lazzari,M. Said Journal of Nanoscience and Nanotechnology, 2012, 12 (11), pp.8791-8796 Article dans une revue hal-00843723v1
Electronic Properties of GaSb Based Heterostructure for 3 um Emission A. Jdidi,S. Abdi-Ben Nasrallah,N. Sfina,M. Saïd,J.-L. Lazzari Sensor letters, 2012, 9 (6), pp.2257-2260 Article dans une revue hal-00698897v1
Si/S1-xGex/Si-based quantum wells infrared photodetector operating at 1.55 mu m N. Sfina,J.-L. Lazzari,M. Said Superlatices and Microstructures, 2012, 52 (4), pp.901-912 Article dans une revue hal-00773483v1
Electrical field and temperature effects in 2D-2D resonant tunneling diodes based on cubic InGaN/AlGaN A. Bhouri,N. Yahyaoui,M. Debbichi,H. Mejri,J.-L. Lazzariet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8 (5), pp.1544-1547 Article dans une revue hal-00603259v1
Structural and electrical characterizations of nanometer scaled aluminum oxide in metal / insulator / silicon (100) heterostructures N. Rochdi,Mahfoudh Raïssi,S. Vizzini,C. Coudreau,J.-L. Lazzariet al. Global Journal of Physical Chemistry, 2011, 2 (2), pp.230-235 Article dans une revue hal-00603274v1
A theoretical study of band structure properties for III-V nitrides quantum wells S. Ben Rejeb,A. Bhouri,M. Debbichi,J.-L. Lazzari,M. Said Superlattices and Microstructures, 2011, 50 (4), pp.277-288. ⟨10.1016/j.spmi.2011.07.004⟩ Article dans une revue istex hal-00624857v1
Spin polarization and spin-dependent transmittance in II-VI diluted magnetic semiconductor heterostructure S. Mnasri,N. Sfina,S. Abdi-Ben Nasrallah,J.-L. Lazzari,M. Said Journal of Magnetism and Magnetic Materials, 2011, 323, pp.334-339 Article dans une revue hal-00566373v1
AII-BIV-CV2 ternary semiconductors for photovoltaics A.V. Krivosheeva,V.L. Shaposhnikov,V.E. Borisenko,F. Arnaud d'Avitaya,J.-L. Lazzari Global Journal of Physical Chemistry, 2011, 2 (2), pp.201-205 Article dans une revue hal-00603275v1
Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation N. Rochdi,K. Liudvikouskaya,M. Descoins,Mahfoudh Raïssi,C. Coudreauet al. Thin Solid Films, 2011, 519 (19), pp.6302-6306 Article dans une revue hal-00603279v1
A multi-color quantum well photodetector for mid- and long-wavelength infrared detection A. Jdidi,N. Sfina,S. Abdi-Ben Nassrallah,M. Saïd,J.-L. Lazzari Semiconductor Science and Technology, 2011, 26 (12), pp.125019. ⟨10.1088/0268-1242/26/12/125019⟩ Article dans une revue istex hal-00696826v1
Different Architectures of Relaxed Si1-xGex/Si Pseudo-Substrates Grown by Low-Pressure Chemical Vapor Deposition: Structural and Morphological Characteristics Mahfoudh Raïssi,G. Regula,C. Hadj Belgacem,N. Rochdi,S. Bozzo-Escoubaset al. Journal of Crystal Growth, 2011, 328, pp.18-24 Article dans une revue hal-00624850v1
Engineering of Ga1-xInxAsySb1y/GaSb quantum well for III-V based devices emitting near 2.7 µm A. Jdidi,N. Sfina,M. Saïd,J.L. Lazzari Institute of physics conference series, 2010, 13, pp.012005 Article dans une revue hal-00603269v1
Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system Mahfoudh Raïssi,S. Vizzini,G. Langer,N. Rochdi,H. Oughaddouet al. Thin Solid Films, 2010, 518 (21), pp.5992-5994 Article dans une revue hal-00523867v1
Inter-Diffusion of cobalt and silicon through an ultrathin aluminum oxide layer T. El Asri,Mahfoudh Raïssi,S. Vizzini,A. El Maachi,E.L. Amezianeet al. Applied Surface Science, 2010, 256, pp.2731-2734 Article dans une revue hal-00475821v1
Alternative II-IV-V2 and Zn-III-IV-As3 compounds for photovoltaic applications A.V. Krivosheeva,V.L. Shaposhnikov,V.E. Borisenko,J. L. Lazzari Fizika, 2010, XVI (3-4EN), pp.33-36 Article dans une revue hal-00603270v1
Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds A.V. Krivosheeva,V.L. Shaposhnikov,F. Arnaud d'Avitaya,V.E. Borisenko,J.L. Lazzari Journal of Physics: Condensed Matter, 2009, 21 (1-6), pp.045507 Article dans une revue hal-00386900v1
A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation M. Debbichi,S. Ridene,H. Bouchriha,A. Ben Fredj,M. Saïdet al. Semiconductor Science and Technology, 2009, 24 (8), ⟨10.1088/0268-1242/24/8/085010⟩ Article dans une revue istex hal-01618135v1
InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations M Debbichi,A Ben Fredj,Y. Cuminal,J-L Lazzari,S Rideneet al. Journal of Physics D: Applied Physics, 2008, 41 (21), pp.215106. ⟨10.1088/0022-3727/41/21/215106⟩ Article dans une revue istex hal-01617369v1
Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications M. Debbichi,A. Fredj,A. Bhouri,M. Saïd,J.-L. Lazzariet al. Materials Science and Engineering: C, 2008, 28 (5-6), pp.751 - 754. ⟨10.1016/j.msec.2007.10.072⟩ Article dans une revue istex hal-01617344v1
Nitrogen effect on optical grain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser M. Debbichi,A. Ben Fredj,M. Said,J.L. Lazzari,Y. Cuminalet al. Physica E: Low-dimensional Systems and Nanostructures, 2008, 40 (3), pp.489-493 Article dans une revue hal-00269960v1
Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser M. Debbichi,A. Ben Fredj,M. Saïd,J.L Lazzari,Y. Cuminalet al. Physica E: Low-dimensional Systems and Nanostructures, 2008, 40 (3), pp.489-493. ⟨10.1016/j.physe.2007.07.003⟩ Article dans une revue istex hal-00327284v1
Coulomb interaction of electron gas in MQWs Si/Si1−xGex/Si N. Sfina,J.-L. Lazzari,Y. Cuminal,Philippe Christol,M. Said Materials Science and Engineering: C, 2008, 28 (5-6), pp.939 - 942. ⟨10.1016/j.msec.2007.10.083⟩ Article dans une revue istex hal-01617316v1
Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm N. Sfina,J.-L. Lazzari,Y. Cuminal,Philippe Christol,M. Said Thin Solid Films, 2008, 517 (1), pp.388-390. ⟨10.1016/j.tsf.2008.08.038⟩ Article dans une revue istex hal-00386891v1
Structural, electronic and optical properties of II-IV-N-2 compounds (II=Be,Zn;IV=Si,Ge) V.L. Shaposhnikov,A.V. Krivosheeva,F. Arnaud D?avitaya,J.L. Lazzari,V.E. Borisenko physica status solidi (b), 2008, 245 (1), pp.142-148 Article dans une revue hal-00269959v1
Growth of magnetic tunnel junctions on Si(001) substrates S. Olive-Mendez,Vinh Le Thanh,I. Ozerov,S. Ferrero,C. Coudreauet al. Thin Solid Films, 2007, 515, pp.6501-6506. ⟨10.1016/j.tsf.2007.02.077⟩ Article dans une revue istex hal-00175305v1
A novel quantum-well laser structure based on InAs1-xNx/GaSb system M. Debbichi,Fredj A. Ben,A. Bhouri,M. Said,J.L. Lazzariet al. Physica Status Solidi C: Current Topics in Solid State Physics, 2007, 4 (2), pp.592-594. ⟨10.1002/pssc.200673246⟩ Article dans une revue istex hal-00175311v1
Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface S. Vizzini,H. Oughaddou,C. Leandri,V.K. Lazarov,A. Kohnet al. Journal of Crystal Growth, 2007, 305, pp.26 Article dans une revue hal-00386873v1
Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface H. Oughaddou,C. Leandri,V.K. Lazarov,A. Kohn,K. Nguyenet al. Journal of Crystal Growth, 2007, 305, pp.26-29 Article dans une revue hal-00175319v1
Resonant tunnelling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum wells J.A. Berashevich,V.E. Borisenko,E. Viktor,J.L. Lazzari,F. Arnaud d'Avitaya Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (11), pp.115336 Article dans une revue hal-00165310v1
Resonant tunneling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum well J.A. Berashevich,V.E. Borisenko,J.L. Lazzari,F. Arnaud d'Avitaya Virtual Journal of Nanoscale Science & Technology, 2007, 15 (12), pp.149 Article dans une revue hal-00175316v1
Induced electrostatic confinement of electron gas in W strain-compensated Si/SiGe/Si type-II quantum wells N. Sfina,J.L Lazzari,Philippe Christol,Y. Cuminal,M. Saïd Journal of Luminescence, 2006, 121 (2), pp.421-425. ⟨10.1016/j.jlumin.2006.08.082⟩ Article dans une revue istex hal-00328229v1
Field effect on electron-hole recombination in Si/Si1-Xgex/Si quantum wells having a W-like type II potential profile N. Sfina,J.L. Lazzari,M. Said Materials Science and Engineering: C, 2006, 26, n° 2-3, pp.214-217 Article dans une revue hal-00068519v1
Modeling of the Stark effect in strained n-type Ge0.6Si0.4/Si/Ge0.6Si0.4 resonat tunneling diodes with graded electrostatic GexSi1-x (0.25 N. Sfina,Nasrallah S. Abdi-Ben,J.L. Lazzari,M. Said Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.737-740 Article dans une revue hal-00133705v1
Strain-balanced Si&lt;sub&gt;1-x&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;/Si type II quantum wells for 1.55μm detection and emission N. Sfina,J.L. Lazzari,J. Derrien,F.A. d'Avitaya,M. Said The European Physical Journal B: Condensed Matter and Complex Systems, 2005, 48 (2), pp.151-156. ⟨10.1140/epjb/e2005-00389-6⟩ Article dans une revue istex hal-00017817v1
Field effect on optical recombination in Si/SiGe quantum hgeterostructures having U, W and M type II potential designs N. Sfina,J.L. Lazzari,M. Said Materials Science and Engineering: B, 2005, 124, pp.470-474 Article dans une revue hal-00016469v1
Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm J. Leclercq,P. Grunberg,G. Boissier,C. Fouillant,S. Sadiket al. Journal de Physique III, 1993, 3 (10), pp.1963-1979. ⟨10.1051/jp3:1993254⟩ Article dans une revue istex jpa-00249058v1
Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs H. Mani,E. Tournié,J.-L. Lazzari,C. Alibert,A. Joulliéet al. Journal of Crystal Growth, 1992, 121 (3), pp.463-472. ⟨10.1016/0022-0248(92)90158-F⟩ Article dans une revue istex hal-03156839v1
Preparation et étude de diodes laser a GaInAsSb-GaAlAsSb fonctionnant en continu à 80K F. Pitard,E. Tournié,M. Mohou,G. Boissier,J.-L. Lazzariet al. Journal de Physique III, 1991, 1 (4), pp.605-622. ⟨10.1051/jp3:1991143⟩ Article dans une revue jpa-00248604v1
GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm E. Tournié,J.-L. Lazzari,E. Villemain,A. Joullié,L. Gouskovet al. Electronics Letters, 1991, 27 (14), pp.1237. ⟨10.1049/el:19910776⟩ Article dans une revue hal-03156834v1
2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy E. Tournié,J.-L. Lazzari,F. Pitard,C. Alibert,A. Joulliéet al. Journal of Applied Physics, 1990, 68 (11), pp.5936-5938. ⟨10.1063/1.346925⟩ Article dans une revue hal-03156369v1

Communication dans un congrès (8)

Heterostructures of two-dimensional transition metal dichalcogenides: formation, ab initio modelling and possible applications A.V. V Krivosheeva,V.L. L Shaposhnikov,V.E. E Borisenko,J.-L. Lazzari 17th International Conference on Nanosciences & Nanotechnologies (NN20), Nanotexnology, Jul 2020, Thessaloniki, Greece. ⟨10.1016/j.matpr.2021.10.217⟩ Communication dans un congrès hal-03451177v1
Quantum well width and barrier thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes Nafaa Kacem,Amel Bhouri,J.-L. Lazzari,Nejeh Jaba 2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS), Jun 2021, Sfax, Tunisia Communication dans un congrès hal-03656141v1
Efficiency limit of AlGaAs solar cell modified by AlGaSb quantum dot intermediate band embedded outside the depletion region A. Kechiantz,A. Afanasev,J.-L. Lazzari,A. Bhouri,Y. Cuminalet al. 24th EUPVSEC, 2012, Frankfurt, Germany Communication dans un congrès hal-01862183v1
Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infrared M. Debbichi,S. Ridene,A. Ben Fredj,M. Saïd,H. Bouchrihaet al. EMRS Int. Conference, 2009, Strasbourg, France Communication dans un congrès hal-01828413v1
Dilute-Nitride &quot;W&quot; and &quot;M&quot; InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domain M. Debbichi,A. Ben Fredj,M. Saïd,S. Ridene,H. Bouchrihaet al. MADICA 2008, 2008, Rabat, Morocco Communication dans un congrès hal-01825842v1
Layer-by-layer growth of aluminium nanometer-scaled oxide barrier for use in magnetic tunnel junctions formed on Si(001) substrates S.F. Olive-Mendez,Vinh Le Thanh,Igor Ozerov,Sylvain Ferreo,Cyril Coudreauet al. E-MRS IUMRS ICEM 2006 Spring Meeting, May 2006, Nice, France Communication dans un congrès hal-01896719v1
Nitride-based quantum-well lasers on InAs substrate for midwave-infrared emission. M. Debbichi,Fredj A. Ben,A. Bhouri,M. Said,J.L. Lazzariet al. 14th International Symposium on Nanostructures: Physics and Technology, NANO 2006, 2006, Saint-Petersbourg, Russia. pp.338-339 Communication dans un congrès hal-00110201v1
Carrier Concentration Control of GaSb/GaInAsSb System Philippe Christol,J. Lazzari,F. de Anda,Juanjo Nieto,H. Aït-Kaciet al. THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY: TPV7: Seventh World Conference on Thermophotovoltaic Generation of Electricity, 2006, Madrid (Spain), France. ⟨10.1063/1.2711727⟩ Communication dans un congrès hal-01756645v1

Poster de conférence (1)

Croissance couche par couche par d'oxyde tunnel ( AlOx) pour application aux MRAM S. Olive Mendez,I. Ozerov,S Ferrero,V. Le Thanh,C. Coudreauet al. 10ème Colloque Louis Néel, Sep 2005, Dourdan, France Poster de conférence hal-02904628v1

Chapitre d'ouvrage (1)

MAGNETIC ORDERING IN DOPED TWO-DIMENSIONAL DICHALCOGENIDES A. Krivosheeva,V. Shaposhnikov,Jean-Louis Lazzari Physics, Chemistry and Application of Nanostructures, WORLD SCIENTIFIC, pp.54-57, 2017, ⟨10.1142/9789813224537_0012⟩ Chapitre d'ouvrage hal-02414605v1